JP2013502077A - 高速−低速走査を用いるマスクイオン注入 - Google Patents

高速−低速走査を用いるマスクイオン注入 Download PDF

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Publication number
JP2013502077A
JP2013502077A JP2012524844A JP2012524844A JP2013502077A JP 2013502077 A JP2013502077 A JP 2013502077A JP 2012524844 A JP2012524844 A JP 2012524844A JP 2012524844 A JP2012524844 A JP 2012524844A JP 2013502077 A JP2013502077 A JP 2013502077A
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substrate
ion beam
mask
ion
scanning speed
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JP2012524844A
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Japanese (ja)
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JP2013502077A5 (enExample
Inventor
ピー ティー ベイトマン ニコラス
エム アネラ スティーブン
ビー リオードン ベンジャミン
ガプタ アトゥル
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ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
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Publication of JP2013502077A publication Critical patent/JP2013502077A/ja
Publication of JP2013502077A5 publication Critical patent/JP2013502077A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20228—Mechanical X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31706—Ion implantation characterised by the area treated
    • H01J2237/3171—Ion implantation characterised by the area treated patterned
    • H01J2237/31711—Ion implantation characterised by the area treated patterned using mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
JP2012524844A 2009-08-11 2010-08-11 高速−低速走査を用いるマスクイオン注入 Pending JP2013502077A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US23282109P 2009-08-11 2009-08-11
US61/232,821 2009-08-11
US12/853,698 2010-08-10
US12/853,698 US8008176B2 (en) 2009-08-11 2010-08-10 Masked ion implant with fast-slow scan
PCT/US2010/045186 WO2011019828A2 (en) 2009-08-11 2010-08-11 Masked ion implant with fast-slow scan

Publications (2)

Publication Number Publication Date
JP2013502077A true JP2013502077A (ja) 2013-01-17
JP2013502077A5 JP2013502077A5 (enExample) 2013-08-15

Family

ID=43586814

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012524844A Pending JP2013502077A (ja) 2009-08-11 2010-08-11 高速−低速走査を用いるマスクイオン注入

Country Status (7)

Country Link
US (2) US8008176B2 (enExample)
EP (1) EP2465146A2 (enExample)
JP (1) JP2013502077A (enExample)
KR (1) KR20120043067A (enExample)
CN (1) CN102484167A (enExample)
TW (1) TW201117393A (enExample)
WO (1) WO2011019828A2 (enExample)

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US20110027463A1 (en) * 2009-06-16 2011-02-03 Varian Semiconductor Equipment Associates, Inc. Workpiece handling system
US8008176B2 (en) * 2009-08-11 2011-08-30 Varian Semiconductor Equipment Associates, Inc. Masked ion implant with fast-slow scan
US8173527B2 (en) * 2009-10-19 2012-05-08 Varian Semiconductor Equipment Associates, Inc. Stepped masking for patterned implantation
US8461030B2 (en) 2009-11-17 2013-06-11 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for controllably implanting workpieces
US8110431B2 (en) * 2010-06-03 2012-02-07 Suniva, Inc. Ion implanted selective emitter solar cells with in situ surface passivation
US8071418B2 (en) * 2010-06-03 2011-12-06 Suniva, Inc. Selective emitter solar cells formed by a hybrid diffusion and ion implantation process
US8598547B2 (en) 2010-06-29 2013-12-03 Varian Semiconductor Equipment Associates, Inc. Handling beam glitches during ion implantation of workpieces
US20110139231A1 (en) * 2010-08-25 2011-06-16 Daniel Meier Back junction solar cell with selective front surface field
US8765583B2 (en) 2011-02-17 2014-07-01 Varian Semiconductor Equipment Associates, Inc. Angled multi-step masking for patterned implantation
GB2489493B (en) 2011-03-31 2013-03-13 Norsk Titanium Components As Method and arrangement for building metallic objects by solid freeform fabrication
DE102011007683A1 (de) * 2011-04-15 2012-10-18 Von Ardenne Anlagentechnik Gmbh Strukturierungsverfahren
US9190548B2 (en) * 2011-10-11 2015-11-17 Varian Semiconductor Equipment Associates, Inc. Method of creating two dimensional doping patterns in solar cells
AU2012358174A1 (en) * 2011-12-23 2014-08-14 Solexel, Inc. High productivity spray processing for semiconductor metallization and interconnects
US20140272181A1 (en) * 2013-03-14 2014-09-18 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for ion implantation in a magnetic field
US9306011B2 (en) * 2013-10-09 2016-04-05 Infineon Technologies Ag Semiconductor device having areas with different conductivity types and different doping concentrations
US9373512B2 (en) 2013-12-03 2016-06-21 GlobalFoundries, Inc. Apparatus and method for laser heating and ion implantation
JP6195538B2 (ja) * 2014-04-25 2017-09-13 住友重機械イオンテクノロジー株式会社 イオン注入方法及びイオン注入装置

Citations (9)

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JPS4979457A (enExample) * 1972-12-04 1974-07-31
DE2835136C2 (enExample) * 1978-08-10 1992-11-05 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De
JPH06310082A (ja) * 1993-04-26 1994-11-04 Nissin Electric Co Ltd イオン注入装置におけるビーム軌道の復元方法
JP2000003881A (ja) * 1998-04-17 2000-01-07 Toshiba Corp イオン注入装置、イオン発生装置および半導体装置の製造方法
JP2003086530A (ja) * 2001-09-11 2003-03-20 Sony Corp イオン注入方法およびイオン注入装置
JP2006302528A (ja) * 2005-04-15 2006-11-02 Ulvac Japan Ltd イオン注入装置及びイオン注入方法
WO2008014339A2 (en) * 2006-07-25 2008-01-31 Silicon Genesis Corporation Method and system for continuous large-area scanning implantation process
JP2009507363A (ja) * 2005-07-27 2009-02-19 シリコン・ジェネシス・コーポレーション 制御された劈開プロセスを用いてプレート上の複数タイル部分を形成する方法および構造
WO2009033134A2 (en) * 2007-09-07 2009-03-12 Varian Semiconductor Equipment Associates, Inc. A patterned assembly for manufacturing a solar cell and a method thereof

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KR20110042052A (ko) 2008-06-11 2011-04-22 솔라 임플란트 테크놀로지스 아이엔씨. 패시팅 및 이온 주입을 이용한 솔라 셀 제작
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JPS4979457A (enExample) * 1972-12-04 1974-07-31
DE2835136C2 (enExample) * 1978-08-10 1992-11-05 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De
JPH06310082A (ja) * 1993-04-26 1994-11-04 Nissin Electric Co Ltd イオン注入装置におけるビーム軌道の復元方法
JP2000003881A (ja) * 1998-04-17 2000-01-07 Toshiba Corp イオン注入装置、イオン発生装置および半導体装置の製造方法
JP2003086530A (ja) * 2001-09-11 2003-03-20 Sony Corp イオン注入方法およびイオン注入装置
JP2006302528A (ja) * 2005-04-15 2006-11-02 Ulvac Japan Ltd イオン注入装置及びイオン注入方法
JP2009507363A (ja) * 2005-07-27 2009-02-19 シリコン・ジェネシス・コーポレーション 制御された劈開プロセスを用いてプレート上の複数タイル部分を形成する方法および構造
WO2008014339A2 (en) * 2006-07-25 2008-01-31 Silicon Genesis Corporation Method and system for continuous large-area scanning implantation process
WO2009033134A2 (en) * 2007-09-07 2009-03-12 Varian Semiconductor Equipment Associates, Inc. A patterned assembly for manufacturing a solar cell and a method thereof
JP2010539684A (ja) * 2007-09-07 2010-12-16 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド 太陽電池製造用のパターン化アセンブリ及び太陽電池の製造方法

Also Published As

Publication number Publication date
WO2011019828A2 (en) 2011-02-17
WO2011019828A3 (en) 2011-12-29
US8008176B2 (en) 2011-08-30
US20110272602A1 (en) 2011-11-10
CN102484167A (zh) 2012-05-30
TW201117393A (en) 2011-05-16
KR20120043067A (ko) 2012-05-03
EP2465146A2 (en) 2012-06-20
US20110039367A1 (en) 2011-02-17
US8461553B2 (en) 2013-06-11

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