JP2013254723A - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP2013254723A
JP2013254723A JP2012209582A JP2012209582A JP2013254723A JP 2013254723 A JP2013254723 A JP 2013254723A JP 2012209582 A JP2012209582 A JP 2012209582A JP 2012209582 A JP2012209582 A JP 2012209582A JP 2013254723 A JP2013254723 A JP 2013254723A
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JP
Japan
Prior art keywords
processing apparatus
plasma processing
faraday shield
gas
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2012209582A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013254723A5 (OSRAM
Inventor
Yusaku Zoku
優作 属
Ryoji Nishio
良司 西尾
Tadayoshi Kawaguchi
忠義 川口
Tsutomu Tetsuka
勉 手束
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp, Hitachi High Tech Corp filed Critical Hitachi High Technologies Corp
Priority to JP2012209582A priority Critical patent/JP2013254723A/ja
Priority to US13/743,748 priority patent/US20130299091A1/en
Priority to KR1020130005786A priority patent/KR20130126458A/ko
Publication of JP2013254723A publication Critical patent/JP2013254723A/ja
Publication of JP2013254723A5 publication Critical patent/JP2013254723A5/ja
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2012209582A 2012-05-11 2012-09-24 プラズマ処理装置 Withdrawn JP2013254723A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012209582A JP2013254723A (ja) 2012-05-11 2012-09-24 プラズマ処理装置
US13/743,748 US20130299091A1 (en) 2012-05-11 2013-01-17 Plasma processing apparatus
KR1020130005786A KR20130126458A (ko) 2012-05-11 2013-01-18 플라즈마 처리 장치

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012109063 2012-05-11
JP2012109063 2012-05-11
JP2012209582A JP2013254723A (ja) 2012-05-11 2012-09-24 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JP2013254723A true JP2013254723A (ja) 2013-12-19
JP2013254723A5 JP2013254723A5 (OSRAM) 2015-03-12

Family

ID=49547716

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012209582A Withdrawn JP2013254723A (ja) 2012-05-11 2012-09-24 プラズマ処理装置

Country Status (3)

Country Link
US (1) US20130299091A1 (OSRAM)
JP (1) JP2013254723A (OSRAM)
KR (1) KR20130126458A (OSRAM)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015138602A (ja) * 2014-01-21 2015-07-30 株式会社アルバック プラズマ処理用整合器、プラズマ処理装置、および、プラズマ処理用整合器の駆動方法
JP2017045916A (ja) * 2015-08-28 2017-03-02 パナソニックＩｐマネジメント株式会社 プラズマ処理装置およびプラズマ処理方法
WO2019118808A1 (en) * 2017-12-15 2019-06-20 Applied Materials, Inc. Shaped electrodes for improved plasma exposure from vertical plasma source
US11315769B2 (en) 2017-05-15 2022-04-26 Applied Materials, Inc. Plasma source for rotating susceptor
JP2022542271A (ja) * 2019-07-30 2022-09-30 江蘇魯▲もん▼儀器有限公司 誘導結合プラズマ処理システム
JPWO2022264384A1 (OSRAM) * 2021-06-17 2022-12-22
KR20230114198A (ko) 2022-01-24 2023-08-01 도쿄엘렉트론가부시키가이샤 플라스마 처리 장치

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5617817B2 (ja) * 2011-10-27 2014-11-05 パナソニック株式会社 誘導結合型プラズマ処理装置及び誘導結合型プラズマ処理方法
US20160118284A1 (en) * 2014-10-22 2016-04-28 Panasonic Intellectual Property Management Co., Ltd. Plasma processing apparatus
GB201603581D0 (en) * 2016-03-01 2016-04-13 Spts Technologies Ltd Plasma processing apparatus
CN105931940B (zh) 2016-06-01 2018-09-21 京东方科技集团股份有限公司 一种电感耦合等离子体装置
CN108121004B (zh) * 2018-01-05 2019-05-24 北京航空航天大学 法拉第探针
CN110660635B (zh) * 2018-06-29 2022-08-16 北京北方华创微电子装备有限公司 工艺腔室和半导体处理设备

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015138602A (ja) * 2014-01-21 2015-07-30 株式会社アルバック プラズマ処理用整合器、プラズマ処理装置、および、プラズマ処理用整合器の駆動方法
JP2017045916A (ja) * 2015-08-28 2017-03-02 パナソニックＩｐマネジメント株式会社 プラズマ処理装置およびプラズマ処理方法
US11315769B2 (en) 2017-05-15 2022-04-26 Applied Materials, Inc. Plasma source for rotating susceptor
WO2019118808A1 (en) * 2017-12-15 2019-06-20 Applied Materials, Inc. Shaped electrodes for improved plasma exposure from vertical plasma source
US10763085B2 (en) 2017-12-15 2020-09-01 Applied Materials, Inc. Shaped electrodes for improved plasma exposure from vertical plasma source
US11315763B2 (en) 2017-12-15 2022-04-26 Applied Materials, Inc. Shaped electrodes for improved plasma exposure from vertical plasma source
JP2022542271A (ja) * 2019-07-30 2022-09-30 江蘇魯▲もん▼儀器有限公司 誘導結合プラズマ処理システム
JP7364288B2 (ja) 2019-07-30 2023-10-18 江蘇魯▲もん▼儀器股▲ふん▼有限公司 誘導結合プラズマ処理システム
JPWO2022264384A1 (OSRAM) * 2021-06-17 2022-12-22
JP7768135B2 (ja) 2021-06-17 2025-11-12 株式会社レゾナック リチウムイオン二次電池用負極材、リチウムイオン二次電池用負極及びリチウムイオン二次電池
KR20230114198A (ko) 2022-01-24 2023-08-01 도쿄엘렉트론가부시키가이샤 플라스마 처리 장치

Also Published As

Publication number Publication date
KR20130126458A (ko) 2013-11-20
US20130299091A1 (en) 2013-11-14

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