JP2013246021A5 - - Google Patents

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Publication number
JP2013246021A5
JP2013246021A5 JP2012119424A JP2012119424A JP2013246021A5 JP 2013246021 A5 JP2013246021 A5 JP 2013246021A5 JP 2012119424 A JP2012119424 A JP 2012119424A JP 2012119424 A JP2012119424 A JP 2012119424A JP 2013246021 A5 JP2013246021 A5 JP 2013246021A5
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JP
Japan
Prior art keywords
pair
semiconductor substrate
support member
electromagnetic wave
vias
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JP2012119424A
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English (en)
Japanese (ja)
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JP2013246021A (ja
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Priority to JP2012119424A priority Critical patent/JP2013246021A/ja
Priority claimed from JP2012119424A external-priority patent/JP2013246021A/ja
Priority to US13/902,329 priority patent/US9006856B2/en
Publication of JP2013246021A publication Critical patent/JP2013246021A/ja
Publication of JP2013246021A5 publication Critical patent/JP2013246021A5/ja
Withdrawn legal-status Critical Current

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JP2012119424A 2012-05-25 2012-05-25 熱型電磁波検出素子、熱型電磁波検出素子の製造方法、熱型電磁波検出装置および電子機器 Withdrawn JP2013246021A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012119424A JP2013246021A (ja) 2012-05-25 2012-05-25 熱型電磁波検出素子、熱型電磁波検出素子の製造方法、熱型電磁波検出装置および電子機器
US13/902,329 US9006856B2 (en) 2012-05-25 2013-05-24 Thermal electromagnetic wave detection element, method for producing thermal electromagnetic wave detection element, thermal electromagnetic wave detection device, and electronic apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012119424A JP2013246021A (ja) 2012-05-25 2012-05-25 熱型電磁波検出素子、熱型電磁波検出素子の製造方法、熱型電磁波検出装置および電子機器

Publications (2)

Publication Number Publication Date
JP2013246021A JP2013246021A (ja) 2013-12-09
JP2013246021A5 true JP2013246021A5 (https=) 2015-06-11

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ID=49620943

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JP2012119424A Withdrawn JP2013246021A (ja) 2012-05-25 2012-05-25 熱型電磁波検出素子、熱型電磁波検出素子の製造方法、熱型電磁波検出装置および電子機器

Country Status (2)

Country Link
US (1) US9006856B2 (https=)
JP (1) JP2013246021A (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013114244B3 (de) * 2013-12-17 2015-01-22 Pyreos Ltd. ATR-Infrarotspektrometer
WO2018193825A1 (ja) * 2017-04-17 2018-10-25 パナソニックＩｐマネジメント株式会社 焦電センサ素子及びこれを用いた焦電センサ
WO2019001871A1 (en) * 2017-06-26 2019-01-03 Asml Netherlands B.V. METHOD OF DETERMINING DEFORMATION
US11047732B2 (en) 2017-07-28 2021-06-29 Pioneer Corporation Electromagnetic wave detection device
JP7353748B2 (ja) * 2018-11-29 2023-10-02 キヤノン株式会社 半導体装置の製造方法および半導体装置
GB201902452D0 (en) * 2019-02-22 2019-04-10 Pyreos Ltd Microsystem and method for making the microsystem
JP7340965B2 (ja) * 2019-06-13 2023-09-08 キヤノン株式会社 半導体装置およびその製造方法
JP7718914B2 (ja) * 2021-08-30 2025-08-05 Tdk株式会社 構造体及び電磁波センサ
GB2599809A (en) 2021-11-12 2022-04-13 Univ Of Twente An apparatus comprising a local oscillator for driving a mixer
WO2023159448A1 (zh) * 2022-02-24 2023-08-31 京东方科技集团股份有限公司 显示模组和显示装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005005488A (ja) * 2003-06-12 2005-01-06 Dainippon Printing Co Ltd 半導体モジュールおよびそれらの製造方法
JP4158830B2 (ja) * 2005-11-25 2008-10-01 松下電工株式会社 熱型赤外線検出装置の製造方法
JP5644121B2 (ja) * 2010-01-26 2014-12-24 セイコーエプソン株式会社 熱型光検出器、熱型光検出装置、電子機器および熱型光検出器の製造方法
JP5589486B2 (ja) 2010-03-26 2014-09-17 セイコーエプソン株式会社 焦電型光検出器、焦電型光検出装置及び電子機器
JP5558189B2 (ja) * 2010-04-26 2014-07-23 浜松ホトニクス株式会社 赤外線センサ及びその製造方法
JP5830877B2 (ja) * 2011-02-24 2015-12-09 セイコーエプソン株式会社 焦電型検出器、焦電型検出装置及び電子機器

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