JP2013245393A - Sample holder - Google Patents

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JP2013245393A
JP2013245393A JP2012121581A JP2012121581A JP2013245393A JP 2013245393 A JP2013245393 A JP 2013245393A JP 2012121581 A JP2012121581 A JP 2012121581A JP 2012121581 A JP2012121581 A JP 2012121581A JP 2013245393 A JP2013245393 A JP 2013245393A
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sample holder
substrate
mounting surface
mounting
film
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JP5817646B2 (en
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Daisuke Imai
大輔 今井
Tetsuya Saruwatari
哲也 猿渡
Takeshi Mishina
健 三科
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Shimadzu Corp
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Shimadzu Corp
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Priority to CN201310109475XA priority patent/CN103451628A/en
Priority to TW102111028A priority patent/TWI466188B/en
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Abstract

PROBLEM TO BE SOLVED: To provide a sample holder capable of improving film thickness distribution of a thin film deposited on a substrate, in a film deposition processing process by a plasma CVD method.SOLUTION: A sample holder is accommodated in a plasma processing apparatus, and is set at the position opposite to an electrode arranged in an interdigital manner. The sample holder has a mounting face extending in the vertical direction in which a mounting area for mounting a substrate to be processed is defined, and a corner part of an outer edge of the mounting face is C-chamfered or R-chamfered.

Description

本発明は、処理対象の基板を搭載してプラズマ処理装置に格納されるサンプルホルダに関する。   The present invention relates to a sample holder on which a substrate to be processed is mounted and stored in a plasma processing apparatus.

プラズマ化学気相成長（ＣＶＤ）法による成膜処理工程では、成膜処理対象の基板が搭載されたサンプルホルダがプラズマＣＶＤ成膜装置に格納される。そして、放電によって原料ガスをプラズマ化することにより、所望の薄膜を基板表面に形成する。このとき、基板を搭載するサンプルホルダの角（コーナー）部における放電集中によって異常放電が生じるおそれがある。   In a film forming process using a plasma chemical vapor deposition (CVD) method, a sample holder on which a substrate to be formed is mounted is stored in a plasma CVD film forming apparatus. Then, a desired thin film is formed on the substrate surface by turning the source gas into plasma by discharge. At this time, abnormal discharge may occur due to discharge concentration at the corner of the sample holder on which the substrate is mounted.

この異常放電によってプラズマＣＶＤ成膜装置の電極が損傷するなどして処理が停止することを防止するために、サンプルホルダの角部での異常放電を防止する方法が提案されている（例えば、特許文献１参照。）。   In order to prevent the processing from being stopped due to damage of the electrode of the plasma CVD film forming apparatus due to the abnormal discharge, a method for preventing the abnormal discharge at the corner of the sample holder has been proposed (for example, a patent). Reference 1).

特開２００２−３７３８８８号公報JP 2002-373888 A

サンプルホルダの角部における放電集中により、基板のサンプルホルダの角部に近い領域に形成される薄膜の膜厚が厚くなり、基板上の膜厚分布の幅が大きくなるという問題が生じる。その結果、製品の特性が劣化し、製造歩留まりが低下する。   Due to the concentration of discharge at the corner of the sample holder, the thickness of the thin film formed in the region of the substrate close to the corner of the sample holder increases, and the width of the film thickness distribution on the substrate increases. As a result, the characteristics of the product are deteriorated and the production yield is lowered.

上記問題点に鑑み、プラズマＣＶＤ法による成膜処理工程における、基板上に形成される薄膜の膜厚分布を改善できるサンプルホルダを提供することを目的とする。   In view of the above problems, an object of the present invention is to provide a sample holder that can improve the film thickness distribution of a thin film formed on a substrate in a film forming process step by plasma CVD.

本発明の一態様によれば、プラズマ処理装置に格納され、櫛歯状に配置された電極と対向する位置にセットされるサンプルホルダであって、処理対象の基板を搭載する搭載領域が定義された垂直方向に延伸する搭載面を有し、搭載面の外縁の角部がＣ面取り又はＲ面取りされているサンプルホルダが提供される。   According to one aspect of the present invention, the sample holder is stored in the plasma processing apparatus and set at a position facing the electrodes arranged in a comb shape, and a mounting area on which a substrate to be processed is mounted is defined. There is provided a sample holder having a mounting surface extending in the vertical direction, and a corner portion of the outer edge of the mounting surface is chamfered or chamfered.

本発明によれば、プラズマＣＶＤ法による成膜処理工程における、基板上に形成される薄膜の膜厚分布を改善できるサンプルホルダを提供できる。   ADVANTAGE OF THE INVENTION According to this invention, the sample holder which can improve the film thickness distribution of the thin film formed on a board | substrate in the film-forming process process by plasma CVD method can be provided.

本発明の実施形態に係るサンプルホルダの構成を示す模式的な斜視図である。It is a typical perspective view which shows the structure of the sample holder which concerns on embodiment of this invention. 本発明の実施形態に係るサンプルホルダの他の構成を示す模式的な斜視図である。It is a typical perspective view which shows the other structure of the sample holder which concerns on embodiment of this invention. 図１に示したサンプルホルダの側面図である。It is a side view of the sample holder shown in FIG. 図２に示したサンプルホルダの側面図である。It is a side view of the sample holder shown in FIG. 本発明の実施形態に係るサンプルホルダが複数の搭載面を有する例を示す模式図である。It is a schematic diagram which shows the example in which the sample holder which concerns on embodiment of this invention has several mounting surfaces. 図５に示したサンプルホルダを用いたプラズマＣＶＤ成膜装置による成膜処理を説明するための模式図である。It is a schematic diagram for demonstrating the film-forming process by the plasma CVD film-forming apparatus using the sample holder shown in FIG. 比較例のサンプルホルダの構成を示す模式図である。It is a schematic diagram which shows the structure of the sample holder of a comparative example. 図７に示したサンプルホルダの成膜処理工程後の状態を示す写真である。It is a photograph which shows the state after the film-forming process process of the sample holder shown in FIG. 本発明の実施形態に係るサンプルホルダの成膜処理工程後の状態を示す写真である。It is a photograph which shows the state after the film-forming process process of the sample holder which concerns on embodiment of this invention.

図面を参照して、本発明の実施形態を説明する。以下の図面の記載において、同一又は類似の部分には同一又は類似の符号を付している。ただし、図面は模式的なものであることに留意すべきである。又、以下に示す実施形態は、この発明の技術的思想を具体化するための装置や方法を例示するものであって、この発明の実施形態は、構成部品の構造、配置などを下記のものに特定するものでない。この発明の実施形態は、特許請求の範囲において、種々の変更を加えることができる。   Embodiments of the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic. Further, the embodiment described below exemplifies an apparatus and a method for embodying the technical idea of the present invention, and the embodiment of the present invention has the following structure and arrangement of components. It is not something specific. The embodiment of the present invention can be variously modified within the scope of the claims.

本発明の実施形態に係るサンプルホルダ１１は、処理対象の基板を搭載してプラズマ処理装置に格納されるサンプルホルダであって、図１及び図２に示すように、基板を搭載する搭載領域１１１が定義された垂直方向に延伸する搭載面１１０を有し、丸印で囲んで示した搭載面１１０の外縁の角部（以下において「角部Ａ」という。）が面取りされている。図１は、搭載面１１０の角部ＡがＣ面取りされている例である。一方、図２は、搭載面１１０の角部ＡがＲ面取りされている例である。なお、図１及び図２では１つの搭載面１１０に３つの搭載領域１１１が定義されている例を示したが、１つの搭載面１１０に定義される搭載領域１１１の数は３つに限られることはなく、例えば１つの搭載面１１０に１つの搭載領域１１１が定義されていてもよい。   A sample holder 11 according to an embodiment of the present invention is a sample holder that mounts a substrate to be processed and is stored in a plasma processing apparatus. As shown in FIGS. 1 and 2, a mounting region 111 on which a substrate is mounted. Has a mounting surface 110 that extends in the defined vertical direction, and a corner portion (hereinafter referred to as “corner portion A”) of the outer edge of the mounting surface 110 surrounded by a circle is chamfered. FIG. 1 is an example in which the corner A of the mounting surface 110 is chamfered. On the other hand, FIG. 2 is an example in which the corner portion A of the mounting surface 110 is rounded. 1 and 2 show an example in which three mounting areas 111 are defined on one mounting surface 110, the number of mounting areas 111 defined on one mounting surface 110 is limited to three. For example, one mounting area 111 may be defined on one mounting surface 110.

図３に、基板１が搭載された搭載面１１０の上部端面の両側の角部ＡがＣ面取りされている具体例を示す。図３に示した角部Ａは、角部Ａを構成して隣接する２辺の延長線の交点から長さｔでＣ面取りされている。   FIG. 3 shows a specific example in which corners A on both sides of the upper end surface of the mounting surface 110 on which the substrate 1 is mounted are chamfered. The corner A shown in FIG. 3 is chamfered with a length t from the intersection of the extension lines of the two sides that constitute the corner A and are adjacent to each other.

図４に、基板１が搭載された搭載面１１０の上部端面の両側の角部ＡがＲ面取りされている具体例を示す。図４に示した角部Ａは、半径ｒの円弧を描くようにＲ面取りされている。   FIG. 4 shows a specific example in which corners A on both sides of the upper end surface of the mounting surface 110 on which the substrate 1 is mounted are rounded. The corner A shown in FIG. 4 is rounded so as to draw an arc having a radius r.

なお、基板１が搭載されるサンプルホルダ１１を複数並べて１つのサンプルホルダを構成してもよい。例えば、図５に示すように、搭載面１１０の面法線方向に沿って複数のサンプルホルダ１１が並列に並べられたボートタイプのサンプルホルダを採用できる。サンプルホルダ１１のそれぞれの底部は固定板１０１によって固定されている。ボートタイプのサンプルホルダにより、１回の成膜処理工程で処理できる基板１の枚数を増やすことができ、その結果、全体の処理時間を短縮することができる。   A plurality of sample holders 11 on which the substrate 1 is mounted may be arranged to constitute one sample holder. For example, as shown in FIG. 5, a boat type sample holder in which a plurality of sample holders 11 are arranged in parallel along the surface normal direction of the mounting surface 110 can be employed. Each bottom portion of the sample holder 11 is fixed by a fixing plate 101. With the boat type sample holder, the number of substrates 1 that can be processed in one film forming process can be increased, and as a result, the overall processing time can be shortened.

サンプルホルダ１１は、例えば図６に示すように、成膜処理対象の基板１を搭載した状態でプラズマＣＶＤ成膜装置１０に格納される。図６に示した例では、サンプルホルダ１１はアノード電極として使用される。プラズマＣＶＤ成膜装置１０は、チャンバー２０と、チャンバー２０内で搭載面１１０とそれぞれ対向するように配置された複数のカソード面を有するカソード電極１２と、サンプルホルダ１１とカソード電極１２間に交流電力を供給して、サンプルホルダ１１とカソード電極１２間において原料ガス１００をプラズマ状態にする交流電源１４とを備える。即ち、サンプルホルダ１１は、プラズマ処理装置に格納され、櫛歯状に配置された電極と対向する位置にセットされる。   For example, as shown in FIG. 6, the sample holder 11 is stored in the plasma CVD film forming apparatus 10 in a state where the substrate 1 to be formed is mounted. In the example shown in FIG. 6, the sample holder 11 is used as an anode electrode. The plasma CVD film forming apparatus 10 includes an AC power between the chamber 20, a cathode electrode 12 having a plurality of cathode surfaces arranged to face the mounting surface 110 in the chamber 20, and the sample holder 11 and the cathode electrode 12. And an AC power source 14 for bringing the source gas 100 into a plasma state between the sample holder 11 and the cathode electrode 12. That is, the sample holder 11 is stored in the plasma processing apparatus and is set at a position facing the electrodes arranged in a comb shape.

プラズマＣＶＤ成膜装置１０では、ガス供給装置１３からチャンバー２０内に成膜用の原料ガス１００が導入される。原料ガス１００を導入後、排気装置１５によってチャンバー２０内の圧力が調整される。チャンバー２０内の原料ガス１００の圧力が所定のガス圧に調整された後、交流電源１４によって所定の交流電力がカソード電極１２とサンプルホルダ１１間に供給される。これにより、チャンバー２０内の原料ガス１００がプラズマ化される。形成されたプラズマに基板１を曝すことにより、原料ガス１００に含まれる原料を主成分とする所望の薄膜が基板１の露出した表面に形成される。   In the plasma CVD film forming apparatus 10, a raw material gas 100 for film formation is introduced from the gas supply apparatus 13 into the chamber 20. After introducing the source gas 100, the pressure inside the chamber 20 is adjusted by the exhaust device 15. After the pressure of the source gas 100 in the chamber 20 is adjusted to a predetermined gas pressure, a predetermined AC power is supplied between the cathode electrode 12 and the sample holder 11 by the AC power source 14. Thereby, the source gas 100 in the chamber 20 is turned into plasma. By exposing the substrate 1 to the formed plasma, a desired thin film mainly composed of the raw material contained in the raw material gas 100 is formed on the exposed surface of the substrate 1.

プラズマＣＶＤ成膜装置１０において原料ガスを適宜選択することによって、シリコン半導体薄膜、シリコン窒化薄膜、シリコン酸化薄膜、シリコン酸窒化薄膜、カーボン薄膜などの所望の薄膜を基板１上に形成することができる。例えば、基板１が太陽電池である場合に、アンモニア（ＮＨ3）ガスとシラン（ＳｉＨ4）ガスの混合ガスを用いて、基板１上に反射防止膜や絶縁膜として窒化シリコン（ＳｉＮ）膜を形成できる。 A desired thin film such as a silicon semiconductor thin film, a silicon nitride thin film, a silicon oxide thin film, a silicon oxynitride thin film, or a carbon thin film can be formed on the substrate 1 by appropriately selecting a source gas in the plasma CVD film forming apparatus 10. . For example, when the substrate 1 is a solar cell, a silicon nitride (SiN) film as an antireflection film or an insulating film is formed on the substrate 1 using a mixed gas of ammonia (NH 3 ) gas and silane (SiH 4 ) gas. Can be formed.

サンプルホルダ１１の搭載面１１０の角部Ａを面取りすることにより、プラズマＣＶＤ法による成膜処理工程における、搭載面１１０の角部Ａでの放電集中を緩和できる。その結果、角部Ａでの放電集中に起因する膜厚分布の異常を抑制して基板１上に形成される薄膜の膜厚分布を改善できる。   By chamfering the corner portion A of the mounting surface 110 of the sample holder 11, the discharge concentration at the corner portion A of the mounting surface 110 in the film forming process by the plasma CVD method can be reduced. As a result, it is possible to improve the film thickness distribution of the thin film formed on the substrate 1 by suppressing the abnormality of the film thickness distribution caused by the discharge concentration at the corner A.

例えば図７に示すような角部Ａを面取りしていないサンプルホルダ１１Ａを用いて成膜処理を行った結果を、図８に示す。図８に示すように、サンプルホルダ１１Ａの搭載面１１０の角部Ａには白く見えるように薄膜が厚く堆積した。一方、角部ＡをＲ面取りしたサンプルホルダ１１を用いて成膜処理を行った場合には、図９に示すようにサンプルホルダ１１の搭載面１１０の角部Ａと他の領域とで外観に差はなく、堆積する膜の膜厚が搭載面１１０の表面で一様であることが確認された。また、角部ＡをＣ面取りしたサンプルホルダ１１においても同様の効果が得られることを確認した。   For example, FIG. 8 shows the result of film formation using a sample holder 11A that is not chamfered at the corner A as shown in FIG. As shown in FIG. 8, a thin film was deposited on the corner A of the mounting surface 110 of the sample holder 11A so as to appear white. On the other hand, when the film forming process is performed using the sample holder 11 with the corner A rounded, as shown in FIG. 9, the corner A of the mounting surface 110 of the sample holder 11 and the other areas are visually changed. There was no difference, and it was confirmed that the film thickness of the deposited film was uniform on the surface of the mounting surface 110. Further, it was confirmed that the same effect can be obtained in the sample holder 11 in which the corner A is chamfered.

基板１に形成される薄膜の膜厚に関して、（最大値−最小値）／（最大値＋最小値）の値を膜厚分布のばらつきとして管理する場合、例えば３％が上限とされる。図７に示したサンプルホルダ１１Ａを用いて成膜処理を行った場合に、基板１に成膜された薄膜のばらつきは５％程度であった。一方、角部Ａを面取りしたサンプルホルダ１１を用いて成膜処理を行った場合は、基板１に成膜された薄膜のばらつきは３％以内であり、良好な場合には１％以下であった。なお、基板１には膜厚８０ｎｍのＳｉＮｘ膜を形成した。   In the case of managing the value of (maximum value−minimum value) / (maximum value + minimum value) as the variation in film thickness distribution, the upper limit is, for example, 3% with respect to the film thickness of the thin film formed on the substrate 1. When the film formation process was performed using the sample holder 11A shown in FIG. 7, the variation of the thin film formed on the substrate 1 was about 5%. On the other hand, when the film forming process is performed using the sample holder 11 with the chamfered corner A, the variation of the thin film formed on the substrate 1 is within 3%, and when good, it is 1% or less. It was. Note that a SiNx film having a thickness of 80 nm was formed on the substrate 1.

サンプルホルダ１１の材料には、アルミニウム（Ａｌ）やステンレス鋼（ＳＵＳ）なども採用可能であるが、成膜処理が例えば４５０℃以上の高温で行われる場合があることなどを考慮して、カーボン材を使用することが好ましい。或いは、導電性セラミックをサンプルホルダ１１に採用してもよい。   Aluminum (Al), stainless steel (SUS), or the like can be used as the material of the sample holder 11, but carbon is considered in consideration of the fact that the film forming process may be performed at a high temperature of, for example, 450 ° C. or higher. It is preferable to use a material. Alternatively, a conductive ceramic may be employed for the sample holder 11.

以上に説明したように、本発明の実施形態に係るサンプルホルダ１１によれば、搭載面１１０の角部Ａを面取りすることにより、プラズマ発生時の放電集中を緩和することができる。これは、物理的に先鋭的な部分が存在する場合、コロナ放電による放電集中が発生するが、本発明の実施形態の構造を用いることにより、放電集中を回避できることが判明したことによる。その結果、基板１上に形成される薄膜の膜厚分布を改善することが可能なサンプルホルダ１１を提供できる。   As described above, according to the sample holder 11 according to the embodiment of the present invention, by chamfering the corner portion A of the mounting surface 110, the discharge concentration at the time of plasma generation can be reduced. This is because discharge concentration due to corona discharge occurs when there is a physically sharp portion, but it has been found that discharge concentration can be avoided by using the structure of the embodiment of the present invention. As a result, the sample holder 11 capable of improving the film thickness distribution of the thin film formed on the substrate 1 can be provided.

なお、本発明者らの調査により、例えば搭載面１１０の面積が２００ｍｍ×２００ｍｍであり、膜厚が２ｍｍのサンプルホルダ１１では、Ｃ面取りする長さｔが１ｍｍ〜３ｍｍの場合、及び、Ｒ面取りする半径ｒが１ｍｍ〜５ｍｍの場合に、搭載面１１０の角部Ａにおける放電集中を緩和する効果が得られることが確認された。なお、角部Ａの面取りにおいては、搭載面１１０の外縁の辺が延伸する方向だけでなく厚み方向にも面取りすることにより、角部Ａに先鋭部がないようにする。このため、各コーナーの頂点部は滑らかな球面状になっている。基板１が搭載されていない面については、面取りをする必要はない。   According to the investigation by the present inventors, for example, in the case of the sample holder 11 having an area of the mounting surface 110 of 200 mm × 200 mm and a film thickness of 2 mm, the chamfering length t is 1 mm to 3 mm, and the R chamfering It was confirmed that the effect of relaxing the discharge concentration at the corner A of the mounting surface 110 can be obtained when the radius r is 1 mm to 5 mm. In the chamfering of the corner portion A, the corner portion A is not sharpened by chamfering not only in the extending direction of the outer edge side of the mounting surface 110 but also in the thickness direction. For this reason, the apex of each corner has a smooth spherical shape. It is not necessary to chamfer the surface on which the substrate 1 is not mounted.

（その他の実施形態）
上記のように、本発明は実施形態によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなろう。 (Other embodiments)
As mentioned above, although this invention was described by embodiment, it should not be understood that the description and drawing which form a part of this indication limit this invention. From this disclosure, various alternative embodiments, examples and operational techniques will be apparent to those skilled in the art.

既に述べた実施形態の説明においては、サンプルホルダ１１をプラズマＣＶＤ成膜膜装置による成膜処理に使用する場合を説明した。しかし、サンプルホルダ１１をプラズマエッチング装置やプラズマアッシング装置などのプラズマ処理装置に使用することにより、搭載面１１０の角部Ａに放電集中することによる処理工程への悪影響を抑制することができる。   In the description of the embodiment already described, the case where the sample holder 11 is used for the film forming process by the plasma CVD film forming apparatus has been described. However, by using the sample holder 11 in a plasma processing apparatus such as a plasma etching apparatus or a plasma ashing apparatus, it is possible to suppress an adverse effect on the processing process due to the discharge concentration on the corner portion A of the mounting surface 110.

このように、本発明はここでは記載していない様々な実施形態等を含むことは勿論である。したがって、本発明の技術的範囲は上記の説明から妥当な特許請求の範囲に係る発明特定事項によってのみ定められるものである。   As described above, the present invention naturally includes various embodiments not described herein. Therefore, the technical scope of the present invention is defined only by the invention specifying matters according to the scope of claims reasonable from the above description.

１…基板
１０…成膜装置
１１…サンプルホルダ
１２…カソード電極
１３…ガス供給装置
１４…交流電源
１５…排気装置
２０…チャンバー
１００…原料ガス
１０１…固定板
１１０…搭載面
１１１…搭載領域
Ａ…角部 DESCRIPTION OF SYMBOLS 1 ... Substrate 10 ... Film-forming apparatus 11 ... Sample holder 12 ... Cathode electrode 13 ... Gas supply apparatus 14 ... AC power supply 15 ... Exhaust apparatus 20 ... Chamber 100 ... Raw material gas 101 ... Fixed plate 110 ... Mounting surface 111 ... Mounting area A ... Corner

Claims (5)

プラズマ処理装置に格納され、櫛歯状に配置された電極と対向する位置にセットされるサンプルホルダであって、
処理対象の基板を搭載する搭載領域が定義された搭載面を有し、前記搭載面の外縁の角部がＣ面取り又はＲ面取りされていることを特徴とするサンプルホルダ。 A sample holder stored in a plasma processing apparatus and set at a position facing an electrode arranged in a comb shape,
A sample holder comprising a mounting surface on which a mounting area for mounting a substrate to be processed is defined, and a corner portion of an outer edge of the mounting surface being chamfered or rounded. 前記角部が、前記角部を構成して隣接する２辺の延長線の交点から１ｍｍ〜３ｍｍの長さでＣ面取りされていることを特徴とする請求項１に記載のサンプルホルダ。   2. The sample holder according to claim 1, wherein the corner portion is chamfered with a length of 1 mm to 3 mm from an intersection of two adjacent extension lines constituting the corner portion. 前記角部が、半径が１ｍｍ〜５ｍｍの円弧を描くようにＲ面取りされていることを特徴とする請求項１に記載のサンプルホルダ。   The sample holder according to claim 1, wherein the corner portion is rounded so as to draw an arc having a radius of 1 mm to 5 mm. 前記搭載面に複数の前記搭載領域が定義されていることを特徴とする請求項１乃至３のいずれか１項に記載のサンプルホルダ。   The sample holder according to any one of claims 1 to 3, wherein a plurality of the mounting areas are defined on the mounting surface. 前記サンプルホルダがカーボンからなることを特徴とする請求項１乃至４のいずれか１項に記載のサンプルホルダ。   The sample holder according to any one of claims 1 to 4, wherein the sample holder is made of carbon.
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