JP2013242397A - ネガ型パターン形成方法、電子デバイスの製造方法、電子デバイス及び感活性光線性又は感放射線性樹脂組成物 - Google Patents

ネガ型パターン形成方法、電子デバイスの製造方法、電子デバイス及び感活性光線性又は感放射線性樹脂組成物 Download PDF

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Publication number
JP2013242397A
JP2013242397A JP2012114818A JP2012114818A JP2013242397A JP 2013242397 A JP2013242397 A JP 2013242397A JP 2012114818 A JP2012114818 A JP 2012114818A JP 2012114818 A JP2012114818 A JP 2012114818A JP 2013242397 A JP2013242397 A JP 2013242397A
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Japan
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group
compound
acid
carbon atoms
atom
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JP2012114818A
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English (en)
Japanese (ja)
Inventor
Junichi Ito
純一 伊藤
Shuhei Yamaguchi
修平 山口
Hidetomo Takahashi
秀知 高橋
Kei Yamamoto
慶 山本
Fumihiro Yoshino
文博 吉野
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Fujifilm Corp
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Fujifilm Corp
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Priority to JP2012114818A priority Critical patent/JP2013242397A/ja
Priority to PCT/JP2013/063862 priority patent/WO2013172466A1/en
Priority to TW102117306A priority patent/TWI656400B/zh
Publication of JP2013242397A publication Critical patent/JP2013242397A/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Hydrogenated Pyridines (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP2012114818A 2012-05-18 2012-05-18 ネガ型パターン形成方法、電子デバイスの製造方法、電子デバイス及び感活性光線性又は感放射線性樹脂組成物 Pending JP2013242397A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012114818A JP2013242397A (ja) 2012-05-18 2012-05-18 ネガ型パターン形成方法、電子デバイスの製造方法、電子デバイス及び感活性光線性又は感放射線性樹脂組成物
PCT/JP2013/063862 WO2013172466A1 (en) 2012-05-18 2013-05-10 Method for forming negative pattern, method for producing electronic device, electronic device and actinic ray-sensitive or radiation-sensitive resin composition
TW102117306A TWI656400B (zh) 2012-05-18 2013-05-16 負型圖案形成方法、電子元件的製造方法、電子元件及感光化射線性或感放射線性樹脂組成物

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012114818A JP2013242397A (ja) 2012-05-18 2012-05-18 ネガ型パターン形成方法、電子デバイスの製造方法、電子デバイス及び感活性光線性又は感放射線性樹脂組成物

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015253716A Division JP6134777B2 (ja) 2015-12-25 2015-12-25 ネガ型パターン形成方法及び電子デバイスの製造方法

Publications (1)

Publication Number Publication Date
JP2013242397A true JP2013242397A (ja) 2013-12-05

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JP2012114818A Pending JP2013242397A (ja) 2012-05-18 2012-05-18 ネガ型パターン形成方法、電子デバイスの製造方法、電子デバイス及び感活性光線性又は感放射線性樹脂組成物

Country Status (3)

Country Link
JP (1) JP2013242397A (zh)
TW (1) TWI656400B (zh)
WO (1) WO2013172466A1 (zh)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014032407A (ja) * 2012-07-31 2014-02-20 Rohm & Haas Electronic Materials Llc フォトレジスト組成物およびフォトリソグラフィパターンを形成する方法
JP2015156001A (ja) * 2014-02-21 2015-08-27 住友化学株式会社 レジスト組成物
JP2017068257A (ja) * 2015-10-02 2017-04-06 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP2019052140A (ja) * 2017-09-15 2019-04-04 住友化学株式会社 化合物、レジスト組成物及びレジストパターンの製造方法
JP7414945B2 (ja) 2018-01-18 2024-01-16 住友化学株式会社 化合物

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017057143A1 (ja) * 2015-09-30 2017-04-06 東レ株式会社 ネガ型着色感光性樹脂組成物、硬化膜、素子および表示装置
JP2022038216A (ja) * 2020-08-26 2022-03-10 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 化学増幅型レジスト組成物およびそれを用いたレジスト膜の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006098950A (ja) * 2004-09-30 2006-04-13 Sumitomo Bakelite Co Ltd 感光性樹脂組成物および半導体装置
JP2006201711A (ja) * 2005-01-24 2006-08-03 Fuji Photo Film Co Ltd 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
WO2011083872A1 (en) * 2010-01-08 2011-07-14 Fujifilm Corporation Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film
JP2011141494A (ja) * 2010-01-08 2011-07-21 Fujifilm Corp パターン形成方法、化学増幅型レジスト組成物及びレジスト膜
JP2011197587A (ja) * 2010-03-23 2011-10-06 Fujifilm Corp パターン形成方法、化学増幅型レジスト組成物、及び、レジスト膜

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4857138B2 (ja) * 2006-03-23 2012-01-18 富士フイルム株式会社 レジスト組成物及びそれを用いたパターン形成方法
JP5150296B2 (ja) * 2008-02-13 2013-02-20 富士フイルム株式会社 電子線、ｘ線またはｅｕｖ用ポジ型レジスト組成物及びこれを用いたパターン形成方法
KR101517763B1 (ko) * 2008-04-11 2015-05-07 주식회사 동진쎄미켐 용해억제제 및 이를 포함하는 화학 증폭형 포토레지스트조성물
JP5593075B2 (ja) * 2010-01-13 2014-09-17 富士フイルム株式会社 パターン形成方法、パターン、化学増幅型レジスト組成物及びレジスト膜

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006098950A (ja) * 2004-09-30 2006-04-13 Sumitomo Bakelite Co Ltd 感光性樹脂組成物および半導体装置
JP2006201711A (ja) * 2005-01-24 2006-08-03 Fuji Photo Film Co Ltd 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
WO2011083872A1 (en) * 2010-01-08 2011-07-14 Fujifilm Corporation Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film
JP2011141494A (ja) * 2010-01-08 2011-07-21 Fujifilm Corp パターン形成方法、化学増幅型レジスト組成物及びレジスト膜
JP2011197587A (ja) * 2010-03-23 2011-10-06 Fujifilm Corp パターン形成方法、化学増幅型レジスト組成物、及び、レジスト膜

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014032407A (ja) * 2012-07-31 2014-02-20 Rohm & Haas Electronic Materials Llc フォトレジスト組成物およびフォトリソグラフィパターンを形成する方法
JP2015156001A (ja) * 2014-02-21 2015-08-27 住友化学株式会社 レジスト組成物
JP2017068257A (ja) * 2015-10-02 2017-04-06 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP2019052140A (ja) * 2017-09-15 2019-04-04 住友化学株式会社 化合物、レジスト組成物及びレジストパターンの製造方法
JP7114400B2 (ja) 2017-09-15 2022-08-08 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP7414945B2 (ja) 2018-01-18 2024-01-16 住友化学株式会社 化合物

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WO2013172466A1 (en) 2013-11-21
TW201348867A (zh) 2013-12-01
TWI656400B (zh) 2019-04-11

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