JP2013232272A5 - - Google Patents

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Publication number
JP2013232272A5
JP2013232272A5 JP2013093707A JP2013093707A JP2013232272A5 JP 2013232272 A5 JP2013232272 A5 JP 2013232272A5 JP 2013093707 A JP2013093707 A JP 2013093707A JP 2013093707 A JP2013093707 A JP 2013093707A JP 2013232272 A5 JP2013232272 A5 JP 2013232272A5
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JP
Japan
Prior art keywords
erase
error correction
verification
correction code
bit cells
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JP2013093707A
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English (en)
Japanese (ja)
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JP2013232272A (ja
JP6288812B2 (ja
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Priority claimed from US13/459,344 external-priority patent/US8713406B2/en
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Publication of JP2013232272A publication Critical patent/JP2013232272A/ja
Publication of JP2013232272A5 publication Critical patent/JP2013232272A5/ja
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Publication of JP6288812B2 publication Critical patent/JP6288812B2/ja
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JP2013093707A 2012-04-30 2013-04-26 誤り訂正符号を有する不揮発性メモリシステムの消去 Active JP6288812B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/459,344 US8713406B2 (en) 2012-04-30 2012-04-30 Erasing a non-volatile memory (NVM) system having error correction code (ECC)
US13/459,344 2012-04-30

Publications (3)

Publication Number Publication Date
JP2013232272A JP2013232272A (ja) 2013-11-14
JP2013232272A5 true JP2013232272A5 (enExample) 2016-06-16
JP6288812B2 JP6288812B2 (ja) 2018-03-07

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ID=48050473

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013093707A Active JP6288812B2 (ja) 2012-04-30 2013-04-26 誤り訂正符号を有する不揮発性メモリシステムの消去

Country Status (4)

Country Link
US (1) US8713406B2 (enExample)
EP (1) EP2667382B1 (enExample)
JP (1) JP6288812B2 (enExample)
CN (1) CN103377707A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9225356B2 (en) * 2012-11-12 2015-12-29 Freescale Semiconductor, Inc. Programming a non-volatile memory (NVM) system having error correction code (ECC)
JP6251885B2 (ja) * 2013-04-26 2017-12-27 パナソニックＩｐマネジメント株式会社 抵抗変化型不揮発性記憶装置およびその書き込み方法
US9691505B2 (en) * 2015-03-27 2017-06-27 Intel Corporation Dynamic application of error correction code (ECC) based on error type
CN113360421B (zh) * 2021-06-23 2023-03-31 武汉新芯集成电路制造有限公司 闪存的擦除方法及系统、计算机存储介质
JP7181984B1 (ja) * 2021-12-09 2022-12-01 ウィンボンド エレクトロニクス コーポレーション 半導体装置および消去方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5579262A (en) * 1996-02-05 1996-11-26 Integrated Silicon Solution, Inc. Program verify and erase verify control circuit for EPROM/flash
US5995417A (en) * 1998-10-20 1999-11-30 Advanced Micro Devices, Inc. Scheme for page erase and erase verify in a non-volatile memory array
AU7313600A (en) * 1999-09-17 2001-04-24 Hitachi Limited Storage where the number of error corrections is recorded
JP4220319B2 (ja) * 2003-07-04 2009-02-04 株式会社東芝 不揮発性半導体記憶装置およびそのサブブロック消去方法
US6967873B2 (en) 2003-10-02 2005-11-22 Advanced Micro Devices, Inc. Memory device and method using positive gate stress to recover overerased cell
JP4261461B2 (ja) * 2004-11-05 2009-04-30 株式会社東芝 半導体集積回路装置、及びそれを用いた不揮発性メモリシステム
US7437653B2 (en) 2004-12-22 2008-10-14 Sandisk Corporation Erased sector detection mechanisms
US7158416B2 (en) 2005-03-15 2007-01-02 Infineon Technologies Flash Gmbh & Co. Kg Method for operating a flash memory device
US7400537B2 (en) * 2005-03-31 2008-07-15 Sandisk Corporation Systems for erasing non-volatile memory using individual verification and additional erasing of subsets of memory cells
US7499317B2 (en) * 2006-10-13 2009-03-03 Sandisk Corporation System for partitioned erase and erase verification in a non-volatile memory to compensate for capacitive coupling
KR100843037B1 (ko) 2007-03-27 2008-07-01 주식회사 하이닉스반도체 플래시 메모리 장치 및 이의 소거 방법
KR100936879B1 (ko) * 2007-12-28 2010-01-14 주식회사 하이닉스반도체 불휘발성 메모리 장치의 소거 방법 및 소프트 프로그램방법
US8064267B2 (en) * 2008-11-14 2011-11-22 Micron Technology, Inc. Erase voltage reduction in a non-volatile memory device
JP2012069180A (ja) * 2010-09-21 2012-04-05 Toshiba Corp 半導体記憶装置
US8345485B2 (en) * 2011-02-09 2013-01-01 Freescale Semiconductor, Inc. Erase ramp pulse width control for non-volatile memory

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