JP2013231728A - Micro-mechanical part incorporated into timepiece mechanism - Google Patents
Micro-mechanical part incorporated into timepiece mechanism Download PDFInfo
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- JP2013231728A JP2013231728A JP2013118770A JP2013118770A JP2013231728A JP 2013231728 A JP2013231728 A JP 2013231728A JP 2013118770 A JP2013118770 A JP 2013118770A JP 2013118770 A JP2013118770 A JP 2013118770A JP 2013231728 A JP2013231728 A JP 2013231728A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000011810 insulating material Substances 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- 230000008021 deposition Effects 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000010931 gold Substances 0.000 claims abstract description 5
- 229910052737 gold Inorganic materials 0.000 claims abstract description 5
- 239000000919 ceramic Substances 0.000 claims abstract description 4
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 4
- 239000010432 diamond Substances 0.000 claims abstract description 4
- 239000011521 glass Substances 0.000 claims abstract description 4
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 4
- 229910052703 rhodium Inorganic materials 0.000 claims abstract description 4
- 239000010948 rhodium Substances 0.000 claims abstract description 4
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000000151 deposition Methods 0.000 claims description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000001465 metallisation Methods 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 239000011247 coating layer Substances 0.000 claims 1
- 239000000696 magnetic material Substances 0.000 claims 1
- 150000003377 silicon compounds Chemical class 0.000 claims 1
- 239000004020 conductor Substances 0.000 abstract description 7
- 150000001875 compounds Chemical class 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
-
- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B17/00—Mechanisms for stabilising frequency
- G04B17/04—Oscillators acting by spring tension
- G04B17/06—Oscillators with hairsprings, e.g. balance
- G04B17/063—Balance construction
-
- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B1/00—Driving mechanisms
-
- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B15/00—Escapements
- G04B15/14—Component parts or constructional details, e.g. construction of the lever or the escape wheel
-
- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B17/00—Mechanisms for stabilising frequency
- G04B17/04—Oscillators acting by spring tension
- G04B17/06—Oscillators with hairsprings, e.g. balance
- G04B17/066—Manufacture of the spiral spring
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Electric Clocks (AREA)
- Reciprocating, Oscillating Or Vibrating Motors (AREA)
Abstract
Description
本発明は、絶縁材でできた微小機械部品に関し、より具体的には、時計仕掛けの固定又は可動部品に関し、該固定又は可動部品が他の部品に近接することによって、直接又は間接的に粒子を引きつけるとことによって可動部品の働きを妨げることがないようにしたものである。 The present invention relates to a micromechanical part made of an insulating material, and more particularly, to a clockwork fixed or movable part, in which particles are directly or indirectly caused by the proximity of the fixed or movable part to another part. The function of the moving parts is not hindered by attracting.
シリコンとその化合物、石英、ダイヤモンド、ガラス、セラミック又はその他の材料の絶縁材は、プレート又は受けのような固定部品用としてだけでなく、例えばひげゼンマイ、てんぷまたは脱進機のような調整システム、又は機構の一部を形成する可動部品用としても、時計製造業が微小機械部品を作るためにより頻繁に使用されている。 Insulating materials of silicon and its compounds, quartz, diamond, glass, ceramic or other materials are used not only for fixed parts such as plates or receivers, but also for adjustment systems such as hairsprings, balances or escapements, Or, for the moving parts that form part of the mechanism, the watchmakers are more frequently used to make micromechanical parts.
特に例えばひげ持ちに留めたり、非導電性接着剤によって結合することによって、他の部品から完全に絶縁されたひげゼンマイに関して、シリコンの使用が1つの欠点を有することが観察された。確かに、一定の操作時間後、ひげゼンマイの外部終端曲線や内部終端曲線の間に位置する幾らかのコイルは、てんぷ受けに付着する傾向があり、そのことは、調整システムの等時性に必然的に有害である。同じ現象が、シリコン又は他の絶縁材でできた他の部品に関しても観察でき、そのことはまた、等時性に有害な影響を最終的に与える。 It has been observed that the use of silicon has one drawback, particularly with respect to a hairspring that is completely insulated from other components, for example by being held in a beard or bonded by a non-conductive adhesive. Certainly, after a certain operating time, some coils located between the outer end curve and the inner end curve of the hairspring tend to stick to the balance, which makes the adjustment system isochronous. Inevitably harmful. The same phenomenon can be observed for other parts made of silicon or other insulating material, which also ultimately has a detrimental effect on isochronism.
従って、表面処理によって付着する危険性が回避される、絶縁材でできた固定又は可動微小機械部品を提供することによって、前述の課題の解決策を提供することが、本発明の目的である。 Accordingly, it is an object of the present invention to provide a solution to the aforementioned problem by providing a fixed or movable micromechanical part made of an insulating material that avoids the risk of adhesion due to surface treatment.
それ故に、本発明は、表面全部又は一部が金属材料又は非金属導電性材料のような導電性材料の薄い堆積で被覆された、シリコンとその化合物、ダイヤモンド、ガラス、セラミック又はその他の材料のような絶縁材でできた微小機械部品に関する。好ましくは導電性堆積は、50nm未満の厚さを有する。肉眼では見えないが、電流分析手段によって知覚できるこの非常に薄い堆積は、隣接部品による引きつけ(この引きつけは、部品内に静電荷を作りがちな摩擦又は張力による)や付着の危険性を取り除く。 Therefore, the present invention relates to silicon and its compounds, diamond, glass, ceramic or other materials, all or part of which is coated with a thin deposit of conductive material, such as metallic or non-metallic conductive material. The present invention relates to a micro mechanical part made of such an insulating material. Preferably the conductive deposit has a thickness of less than 50 nm. This very thin deposit that is not visible to the naked eye but is perceptible by means of current analysis removes the risk of attraction by adjacent parts (this attraction is due to friction or tension that tends to create an electrostatic charge in the part) and adhesion.
この堆積は、絶縁材の、すなわち少なくとも外面が絶縁材でできた、一体鋳造又は複合部品に実行することができる。 This deposition can be carried out on a monolithic cast or composite part of insulating material, ie at least the outer surface being made of insulating material.
前述の目的を達成することが可能な材料の中から、金、白金、ロジウム、パラジウムのような非酸化かつ非磁性金属が、好ましくは選択される。 Of the materials capable of achieving the aforementioned objectives, non-oxidizing and non-magnetic metals such as gold, platinum, rhodium, palladium are preferably selected.
非金属導電性材料の中から、黒鉛、炭素、ドープシリコン、導電性高分子が、好ましくは選択される。 Of the non-metallic conductive materials, graphite, carbon, doped silicon, and conductive polymer are preferably selected.
これらの金属は、操作条件を調節することによって厚さの制御を可能にする公知の方法によって、例えばスパッタリング、PVD、ドーピング、イオン注入又は電解法によって堆積できる。同じ技術が、非導電性金属材料を堆積させるために使用できた。 These metals can be deposited by known methods that allow for thickness control by adjusting the operating conditions, for example by sputtering, PVD, doping, ion implantation or electrolysis. The same technique could be used to deposit non-conductive metallic materials.
好ましい応用態様において、前記微小機械部品は、ひげゼンマイ、パレット、がんぎ車又は歯車のような時計仕掛けの機構における部品、又は可動部品のアーバベアリングを形成することが可能な他の固定部品である。以下の詳細な説明において、本発明は、時計仕掛けの最も敏感な部品であるひげゼンマイによって特に説明される。
本発明は、このタイプの微小機械部品を組み入れた時計にも関する。
In a preferred application, the micromechanical part is a part in a clockwork mechanism such as a hairspring, pallet, escape wheel or gear, or other fixed part capable of forming an arbor bearing of a movable part. is there. In the following detailed description, the present invention is particularly illustrated by the hairspring, which is the most sensitive part of a clockwork.
The invention also relates to a timepiece incorporating a micromechanical part of this type.
本発明の他の特徴及び利点は、添付図面を参照して、非限定的な説明として与えられる実施例の以下の記載においてより明瞭に現れるであろう。 Other features and advantages of the present invention will appear more clearly in the following description of embodiments given by way of non-limiting description with reference to the accompanying drawings.
本発明は、ひげゼンマイ1が、集積回路又は加速度計の製造で用いられるマイクロマシニング技術を適用して、シリコン又は他の非晶質若しくは結晶質絶縁材のプレートから、例として、シリコンでできた図1に示すばねてんぷ調整装置が説明される。例えば、ひげゼンマイに望ましい輪郭に適したマスクを使用して、ウェットエッチング、ドライプラズマ加工又は反応性イオンエッチング(RIE)を行うことができる。 The present invention is a hairspring 1 made of, for example, silicon from a plate of silicon or other amorphous or crystalline insulating material, applying micromachining techniques used in the manufacture of integrated circuits or accelerometers The spring balance adjusting apparatus shown in FIG. 1 will be described. For example, wet etching, dry plasma processing, or reactive ion etching (RIE) can be performed using a mask suitable for the contour desired for the hairspring.
小さな面積を考えれば、同じシリコンプレートから、一群のひげゼンマイを製造することができ、その形状は、プレートの厚さとマスクの形状によって決定され、前記形状は、一平面で作動するひげゼンマイに対して計算される。 Given the small area, a group of hairsprings can be manufactured from the same silicon plate, the shape of which is determined by the thickness of the plate and the shape of the mask, said shape being for a hairspring that operates in one plane. Is calculated.
断面が、ひげゼンマイ1とてんぷ受け9に限定される図2を今度は参照すると、コイル11が、いかなる処理も受けなかった時に、一定の操作時間後のコイル11の行動は、左側部分に示される。見られるように、コイル11は、点線で示すその正常位置から離れ、てんぷ受け9によって引きつけられ、かつてんぷ受け9に付着することもあるが、そのことは正常な働き、すなわち一平面内での唯一の伸長/収縮運動による働きを妨げる。
Referring now to FIG. 2 where the cross-section is limited to the hairspring 1 and balance 9, the behavior of the
右側部分は、処理後のひげゼンマイ1を示し、点線は、コイル11が、処理がない場合に占めるであろう位置を表す。見られるように、ひげゼンマイは、完全に一平面内に留まる。実際に、驚くべきことに、コイル表面の全部又は一部への金属材料のような導電性材料の非常に薄い堆積からなる処理を実行することによって、ひげゼンマイの固有の機械的性質をそれにより変えることなく、前述の有害な影響が消滅することが観察された。「非常に薄い堆積」は、50nm未満、好ましくは10〜20nmの厚さを有する堆積を意味する。堆積が50nm未満である時、部品の固有の機械的性質は、変えられず、かつ堆積は、肉眼では見えないが、それにもかかわらず電流分析技術によって知覚できる。導電性金属材料が使用される時、使用される材料は、好ましくは金、白金、ロジウム、パラジウムのような非酸化かつ非磁性金属である。この堆積は、スパッタリング、PVD、イオン注入又は電解析出のような種々の公知の方法によって実行できる。
The right part shows the hairspring 1 after processing, and the dotted line represents the position that the
例として15nmの金の堆積が、15秒間、60mAの電流を加えることにより、スパッタリングによって実行された。 As an example, a 15 nm gold deposition was performed by sputtering by applying a 60 mA current for 15 seconds.
非金属導電性材料が堆積する時、それは好ましくは、黒鉛、炭素、ドープシリコン、導電性高分子からなる群から選択され、かつ前述の堆積技術及び厚さが使用される。 When the non-metallic conductive material is deposited, it is preferably selected from the group consisting of graphite, carbon, doped silicon, conductive polymers, and the aforementioned deposition techniques and thicknesses are used.
我々は、今までシリコンひげゼンマイを記載したが、前記のような、他の非晶質又は結晶質非導電性材料も使用でき、かつ引きつけや付着の危険性を回避する、表面金属化によって処理できる。 We have described a silicon hairspring so far, but other amorphous or crystalline non-conductive materials as described above can also be used and treated by surface metallization to avoid the risk of attraction and adhesion it can.
シリコンコアと、例えば、導電性材料の薄い堆積が作られる厚い二酸化ケイ素コーティングを有するひげゼンマイとを作るために、複合材料を使用することも可能である。 It is also possible to use a composite material to make a silicon core and, for example, a hairspring with a thick silicon dioxide coating from which a thin deposit of conductive material is made.
「複合材料」は、絶縁材に埋設された金属コアを含んでも良い。 The “composite material” may include a metal core embedded in an insulating material.
同様に、本発明は、ひげゼンマイに限定されず、パレット、がんぎ車又は歯車のような他の移動部品、及び時計仕掛けの他の固定又は移動部品に適用できる。 Similarly, the present invention is not limited to a hairspring, but can be applied to other moving parts such as pallets, escape wheels or gears, and other fixed or moving parts of a clockwork.
1 ひげゼンマイ
9 てんぷ受け
11 コイル
1 Hairspring 9 Balance holder 11 Coil
Claims (7)
前記少なくとも1種の絶縁材が、
表面の全部又は一部が、金属の堆積によって形成された被覆層で被覆されている
ことを特徴とする微小機械部品。 A micromechanical part made of at least one insulating material and incorporated into a clockwork mechanism,
The at least one insulating material is
A micromechanical component characterized in that all or part of the surface is coated with a coating layer formed by metal deposition .
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06111727.1 | 2006-03-24 | ||
EP06111727A EP1837721A1 (en) | 2006-03-24 | 2006-03-24 | Micro-mechanical piece made from insulating material and method of manufacture therefor |
CH00595/06 | 2006-04-10 | ||
CH00595/06A CH707669B1 (en) | 2006-04-10 | 2006-04-10 | micro-mechanical part of electrically insulating material or silicon or its compounds and its manufacturing process. |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2007076624A Division JP5378654B2 (en) | 2006-03-24 | 2007-03-23 | Micromechanical part made of insulating material and method of manufacturing the same |
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JP2013231728A true JP2013231728A (en) | 2013-11-14 |
JP5599917B2 JP5599917B2 (en) | 2014-10-01 |
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JP2007076624A Active JP5378654B2 (en) | 2006-03-24 | 2007-03-23 | Micromechanical part made of insulating material and method of manufacturing the same |
JP2013118770A Active JP5599917B2 (en) | 2006-03-24 | 2013-06-05 | Micro mechanical parts incorporated into the clockwork mechanism |
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JP2007076624A Active JP5378654B2 (en) | 2006-03-24 | 2007-03-23 | Micromechanical part made of insulating material and method of manufacturing the same |
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US (1) | US7824097B2 (en) |
JP (2) | JP5378654B2 (en) |
KR (1) | KR20070096834A (en) |
HK (1) | HK1113948A1 (en) |
TW (1) | TWI438588B (en) |
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JP2015179067A (en) * | 2014-02-26 | 2015-10-08 | シチズンホールディングス株式会社 | Manufacturing method of balance spring |
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Also Published As
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KR20070096834A (en) | 2007-10-02 |
JP2007256290A (en) | 2007-10-04 |
JP5599917B2 (en) | 2014-10-01 |
TW200801867A (en) | 2008-01-01 |
JP5378654B2 (en) | 2013-12-25 |
US7824097B2 (en) | 2010-11-02 |
HK1113948A1 (en) | 2008-10-17 |
US20080037376A1 (en) | 2008-02-14 |
TWI438588B (en) | 2014-05-21 |
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