JP2013229438A5 - Light emitting device - Google Patents
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- JP2013229438A5 JP2013229438A5 JP2012100038A JP2012100038A JP2013229438A5 JP 2013229438 A5 JP2013229438 A5 JP 2013229438A5 JP 2012100038 A JP2012100038 A JP 2012100038A JP 2012100038 A JP2012100038 A JP 2012100038A JP 2013229438 A5 JP2013229438 A5 JP 2013229438A5
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- 238000006243 chemical reaction Methods 0.000 claims description 54
- 239000010410 layer Substances 0.000 claims description 53
- 239000002245 particle Substances 0.000 claims description 41
- 239000011247 coating layer Substances 0.000 claims description 31
- 239000010954 inorganic particle Substances 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 23
- 229910010272 inorganic material Inorganic materials 0.000 claims description 9
- 239000011147 inorganic material Substances 0.000 claims description 9
- -1 halogen silicate Chemical class 0.000 claims description 6
- 239000011230 binding agent Substances 0.000 claims description 4
- 239000011800 void material Substances 0.000 claims description 4
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000003568 thioethers Chemical class 0.000 claims description 2
- GEIAQOFPUVMAGM-UHFFFAOYSA-N oxozirconium Chemical compound [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 claims 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- 229910017083 AlN Inorganic materials 0.000 claims 1
- 229910004140 HfO Inorganic materials 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 229910006404 SnO 2 Inorganic materials 0.000 claims 1
- 229910034342 TiN Inorganic materials 0.000 claims 1
- 229910010413 TiO 2 Inorganic materials 0.000 claims 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N tin hydride Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 35
- 239000004020 conductor Substances 0.000 description 6
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- 239000011241 protective layer Substances 0.000 description 5
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- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
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Description
本発明は、粒状の無機蛍光体を含有する無機材料からなる波長変換用成形体を備えた発光装置に関する。 The present invention relates to a light-emitting equipment provided with a wavelength conversion moldings made of an inorganic material containing an inorganic phosphor particulate.
本発明はかかる問題に鑑み、厚さ、形状及び用いる無機蛍光体の制約が少ない波長変換用成形体を備えた発光装置を提供することを課題とする。 The invention according view of the problems, the thickness, and to provide a shape and emission equipment with an inorganic phosphor constraint is less wavelength conversion molded article to be used.
本発明は前記した課題を解決するために創案されたものであり、第１の発明に係る発光装置は、半導体発光素子と、無機材料からなる波長変換部材の粒子を含有する無機粒子層と、を有し、前記無機粒子層は、凝集体と、被覆層と、空隙と、を有して構成した。
なお、本発明における「発光装置」とは、半導体発光素子に波長変換部材が装着されており、電気的な接続により目的とする発光波長を出すものである。
The present invention has been devised to solve the above-described problem, and a light-emitting device according to a first invention includes a semiconductor light-emitting element, an inorganic particle layer containing particles of a wavelength conversion member made of an inorganic material, The inorganic particle layer has an aggregate, a coating layer, and voids.
The “light-emitting device” in the present invention is a device in which a wavelength conversion member is attached to a semiconductor light-emitting element and emits a target light emission wavelength by electrical connection.
かかる構成によれば、半導体発光素子が発光し、無機粒子層に入射した第１の波長の光は、波長変換部材により吸収され、第１の波長とは異なる第２の波長の光に波長変換されて発光する。このとき、無機粒子層への入射光は、無機粒子層内に存在する空隙によって散乱され、無機粒子層内の波長変換部材に効率的に照射される。これによって、入射光は波長変換部材の粒子に効率的に吸収され、第２の波長の光に波長変換される。 According to such a configuration, the semiconductor light emitting element emits light, the light of the first wavelength incident on the inorganic particle layer is absorbed by the wavelength converting member, the wavelength conversion into light of the second wavelength different from the first wavelength Is emitted. At this time, the incident light to the inorganic particle layer is scattered by the voids existing in the inorganic particle layer, and is efficiently irradiated to the wavelength conversion member in the inorganic particle layer. Thus, the incident light is efficiently absorbed by the particles of the wavelength conversion member, is wavelength-converted into light of the second wavelength.
なお、波長変換部材は、第１の波長の光を吸収し、第１の波長とは異なる第２の波長の光を発光するものであり、例えば、窒化物蛍光体やフッ化物蛍光体などの無機蛍光体である。また、無機粒子層において、波長変換部材の粒子は、当該粒子同士又は半導体発光素子と接触することで連続的に繋がった凝集体となる。そして、半導体発光素子の表面及び波長変換部材の粒子の表面は、無機材料からなる被覆層によって連続的に被覆される。すなわち、波長変換を行う層である無機粒子層の厚さや形状は、波長変換部材の粒子の凝集体の厚さや形状によって定められる。また、無機粒子層の内部には、被覆層で被覆された粒子、又は、被覆層で被覆された粒子及び被覆層で被覆された半導体発光素子によって取り囲まれた空隙が形成される。 The wavelength conversion member absorbs light of a first wavelength, the first wavelength is intended to emit light of a second wavelength different from, for example, such as a nitride phosphor and fluoride phosphor It is an inorganic phosphor. Moreover, in the inorganic particle layer, the particles of the wavelength conversion member become aggregates continuously connected by contacting the particles or the semiconductor light emitting element. And the surface of the semiconductor light-emitting device and the surface of the particle | grains of the wavelength conversion member are continuously coat | covered with the coating layer which consists of inorganic materials. That is, the thickness and shape of the inorganic particle layer, which is a layer that performs wavelength conversion, are determined by the thickness and shape of the aggregate of particles of the wavelength conversion member. Further, inside the inorganic particle layer, a void surrounded by the particles coated with the coating layer, or the particles coated with the coating layer and the semiconductor light emitting device coated with the coating layer is formed.
かかる構成によれば、発光装置は、この範囲の空隙率の空隙によって、高い含有率で波長変換部材を含有すると共に、入射光を良好に散乱して無機粒子層内の波長変換部材を照射し、効率的に入射光を波長変換する。また、この範囲の空隙率の空隙によって、発光装置は、発光装置の線膨張率と無機粒子層の線膨張率との間に差がある場合でも、発熱時の熱膨張による歪を吸収してクラックの発生を防止する。 According to such a configuration, the light-emitting device contains the wavelength conversion member with a high content rate due to the voids in this range, and scatters incident light well and irradiates the wavelength conversion member in the inorganic particle layer. Efficiently converts the wavelength of incident light. In addition, the voids with a porosity in this range allow the light-emitting device to absorb strain due to thermal expansion during heat generation even when there is a difference between the linear expansion coefficient of the light-emitting device and the linear expansion coefficient of the inorganic particle layer. Prevents the generation of cracks.
第３の発明に係る発光装置は、前記波長変換部材の粒子の平均粒径が、０．１〜１００μｍであり、前記被覆層の平均厚さが１０ｎｍ〜５０μｍとすることができる。 In the light emitting device according to the third invention, the wavelength conversion member may have an average particle diameter of 0.1 to 100 μm, and the coating layer may have an average thickness of 10 nm to 50 μm.
この範囲の平均粒径の波長変換部材を用いることで、厚さの薄い波長変換用無機変換部材とすることができる。また、被覆層の平均厚さをこの範囲とすることで、波長変換部材の粒子を良好に被覆することができる。 By using a wavelength conversion member having an average particle diameter in this range, a thin wavelength conversion inorganic conversion member can be obtained. Moreover, the particle | grains of the wavelength conversion member can be coat | covered favorably by making the average thickness of a coating layer into this range.
第４の発明に係る発光装置は、前記無機粒子層の表面に、前記波長変換部材の粒子の粒径に起因する凹凸形状が形成されていることが好ましい。 In the light emitting device according to the fourth aspect of the invention, it is preferable that a concavo-convex shape resulting from the particle diameter of the wavelength conversion member is formed on the surface of the inorganic particle layer.
かかる構成によれば、発光装置は、好適な材料からなる被覆層で、波長変換部材の粒子を良好に被覆する。 According to such a configuration, the light emitting device satisfactorily coats the particles of the wavelength conversion member with the coating layer made of a suitable material.
第７の発明に係る発光装置は、前記波長変換部材が、硫化物系蛍光体、ハロゲンケイ酸塩系蛍光体、窒化物蛍光体、及び酸窒化物蛍光体から構成される群から選択される少なくとも一種の化合物を含有することができる。 In the light emitting device according to the seventh invention, the wavelength conversion member is selected from the group consisting of sulfide phosphors, halogen silicate phosphors, nitride phosphors, and oxynitride phosphors. At least one compound can be contained.
かかる構成によれば、発光装置は、熱により失活しやすいこれらの無機蛍光体を用いて、波長変換を行うことができる。 According to this configuration, the light emitting device can perform wavelength conversion using these inorganic phosphors that are easily deactivated by heat.
第８の発明に係る発光装置は、前記波長変換部材が、フッ化物蛍光体を、少なくとも含有することができる。 In the light emitting device according to the eighth invention, the wavelength conversion member may contain at least a fluoride phosphor.
かかる構成によれば、発光装置は、水分により劣化しやすいフッ化物蛍光体を用いて、波長変換を行うことができる。 According to such a configuration, the light emitting device can perform wavelength conversion using the fluoride phosphor that easily deteriorates due to moisture.
第９の発明に係る発光装置は、前記波長変換部材の粒子が、当該粒子同士及び前記半導体発光素子と無機結着材により結着していることが好ましい。 In the light emitting device according to the ninth invention, it is preferable that the particles of the wavelength conversion member are bound to each other and to the semiconductor light emitting element by an inorganic binder.
かかる構成によれば、発光装置の無機粒子層は、無機結着材により波長変換部材の粒子の凝集体が散逸することなく形成される。 According to such a configuration, the inorganic particle layer of the light emitting device is formed without dissipating the aggregate of the particles of the wavelength conversion member by the inorganic binder.
第１の発明によれば、波長変換を行う層である無機粒子層の厚さや形状は、波長変換部材の粒子の凝集体を被覆層で被覆して、内部に空隙を設けた状態で厚さや形状を定められるため、厚さや形状を自由に定めることができる。また、このように構成することで、無機粒子層は、無機粒子層における波長変換部材の含有率を高くすることができると共に、内部に設けられた空隙の光散乱効果により、高い波長変換効率を得ることができるため、一定の波長変換率を得るための無機粒子層の厚さを薄くすることができる。また、無機粒子層は、樹脂などの有機材料を用いることなく、無機材料で構成されるため、高輝度の光の照射や高温に晒される場合でも、経時劣化の少ない発光装置とすることができる。 According to the first invention, the thickness and shape of the inorganic particle layer, which is a layer that performs wavelength conversion, can be determined by covering the aggregates of the particles of the wavelength conversion member with the coating layer and providing voids therein. Since the shape can be determined, the thickness and shape can be freely determined. In addition, with this configuration, the inorganic particle layer can increase the content of the wavelength conversion member in the inorganic particle layer, and has high wavelength conversion efficiency due to the light scattering effect of the voids provided inside. Therefore, the thickness of the inorganic particle layer for obtaining a certain wavelength conversion rate can be reduced. In addition, since the inorganic particle layer is made of an inorganic material without using an organic material such as a resin, a light-emitting device with little deterioration over time can be obtained even when exposed to high-luminance light irradiation or high temperatures. .
第２の発明によれば、適度な空隙率の空隙を設けることで、良好な波長変換効率が得られるため、無機粒子層の厚さを薄くすることができる。また、クラックの発生を防止することができるため、製造時の歩留まりと、使用時の信頼性とを向上することができる。 According to the second invention, by providing a void having an appropriate porosity, a good wavelength conversion efficiency can be obtained, so that the thickness of the inorganic particle layer can be reduced. Moreover, since generation | occurrence | production of a crack can be prevented, the yield at the time of manufacture and the reliability at the time of use can be improved.
第３の発明によれば、適度な平均粒径の波長変換部材と、適度な厚さの被覆層で構成することにより、無機粒子層の厚さを薄くすることができる。 According to 3rd invention, the thickness of an inorganic particle layer can be made thin by comprising with the wavelength conversion member of a moderate average particle diameter, and the coating layer of moderate thickness.
第５の発明によれば、原子層堆積法による緻密で均一な被覆層によって波長変換部材が被覆されるため、水分などの雰囲気により劣化しやすい蛍光体を用いても、信頼性の高い発光装置とすることができる。また、原子層堆積法により、比較的低温で被覆層が形成されるため、熱により劣化しやすい蛍光体を用いた発光装置を形成することができる。更に、無機粒子層の粒子間の隙間に良好に空隙が形成されるため、波長変換効率を向上することができる。 According to the fifth aspect of the invention, since the wavelength conversion member is covered with a dense and uniform coating layer formed by the atomic layer deposition method, a highly reliable light-emitting device even when using a phosphor that easily deteriorates in an atmosphere such as moisture It can be. Further, since the coating layer is formed at a relatively low temperature by the atomic layer deposition method, a light emitting device using a phosphor that is easily deteriorated by heat can be formed. Furthermore, since the voids are favorably formed in the gaps between the particles of the inorganic particle layer, the wavelength conversion efficiency can be improved.
第６の発明によれば、好適な材料を用いた被覆層により波長変換部材が雰囲気から保護されるため、信頼性が向上する。 According to the sixth aspect of the invention, the wavelength conversion member is protected from the atmosphere by the coating layer using a suitable material, so that the reliability is improved.
第７の発明又は第８の発明によれば、波長変換部材として、熱や雰囲気により失活しやすい蛍光体を用いることができるため、様々な波長、例えば、赤色に波長変換する波長変換用無機蛍光体を構成することができる。 According to the seventh invention or the eighth invention, as the wavelength conversion member, it is possible to use inactivated easily phosphor by heat or atmosphere, a variety of wavelengths, for example, inorganic wavelength converting wavelength conversion to red A phosphor can be constructed.
第９の発明によれば、無機結着材により波長変換部材の粒子の凝集体が散逸することなく発光装置が形成されるため、無機粒子層の形状が安定する。 According to the ninth aspect, since the light emitting device is formed without dissipating the aggregate of the particles of the wavelength conversion member by the inorganic binder, the shape of the inorganic particle layer is stabilized.
＜発光装置＞
［発光装置の構成］
本発明の実施形態に係る発光装置の構造を、図１を参照して説明する。
図１（ａ）に示すように、第１実施形態に係る発光装置１は、半導体発光素子２の側面及び、半導体発光素子２の上面に、蛍光体層（無機粒子層）３が設けられている。また、蛍光体層３は、粒状の無機蛍光体（波長変換部材）３１と、無機蛍光体３１を被覆する被覆層３２とから形成されている。更に詳細には、図１（ｂ）に示すように、蛍光体層３の内部には、空隙３３が形成されている。
<Light emitting device>
[Configuration of light emitting device]
A structure of a light emitting device according to an embodiment of the present invention will be described with reference to FIG.
As shown in FIG. 1A, the light emitting device 1 according to the first embodiment is provided with a phosphor layer (inorganic particle layer) 3 on the side surface of the semiconductor light emitting element 2 and the upper surface of the semiconductor light emitting element 2. Yes. The phosphor layer 3 is formed of a granular inorganic phosphor ( wavelength conversion member) 31 and a coating layer 32 that covers the inorganic phosphor 31. More specifically, as shown in FIG. 1B, a gap 33 is formed inside the phosphor layer 3.
（無機蛍光体（波長変換部材））
無機蛍光体３１は、蛍光体層３に入射した光を吸収し、入射光の色とは異なる色の光を発光する無機材料からなる蛍光体である。
無機蛍光体３１として使用される蛍光体材料は、励起光である入射光を吸収して、異なる色（波長）の光に色変換（波長変換）するものであればよい。特に、無機蛍光体３１が、紫外光ないし青色光を吸収して、青色光ないし赤色光を放出する材料であることが好ましい。
(Inorganic phosphor ( wavelength conversion member))
The inorganic phosphor 31 is a phosphor made of an inorganic material that absorbs light incident on the phosphor layer 3 and emits light of a color different from the color of the incident light.
The phosphor material used as the inorganic phosphor 31 may be any material that absorbs incident light that is excitation light and performs color conversion (wavelength conversion) to light of a different color (wavelength). In particular, the inorganic phosphor 31 is preferably a material that absorbs ultraviolet light or blue light and emits blue light or red light.
（蛍光体層形成工程（無機粒子層形成工程））
蛍光体層形成工程Ｓ１４は、半導体発光素子２の表面に、半導体発光素子２が発光する第１の色の光を吸収し、第１の色とは異なる第２の色の光を発光する無機材料からなる波長変換部材（無機蛍光体３１）の粒子を含有する凝集体（粒子層３４）を形成する工程である。
蛍光体層形成工程Ｓ１４において、図５（ｃ）に示すように、導電体層６を一方の電極として、電気沈着（電着）法又は静電塗装法により、半導体発光素子２の表面（上面及び側面）に、導電体層６を介して無機蛍光体３１の粒子層３４を形成する。
なお、半導体発光素子２が絶縁体であっても、導電体である金属を導電体層６として用いることで、導電体層６を電極として、電気沈着法や静電塗装法により無機蛍光体３１の粒子層３４を形成することができる。
(Phosphor layer forming step (inorganic particle layer forming step))
In the phosphor layer forming step S14, the surface of the semiconductor light emitting element 2 absorbs the first color light emitted from the semiconductor light emitting element 2 and emits the second color light different from the first color. This is a step of forming an aggregate (particle layer 34) containing particles of a wavelength conversion member (inorganic phosphor 31) made of a material.
In the phosphor layer forming step S14, as shown in FIG. 5C, the surface (upper surface) of the semiconductor light-emitting element 2 is formed by electro-deposition (electrodeposition) method or electrostatic coating method using the conductor layer 6 as one electrode. And the side surface), the particle layer 34 of the inorganic phosphor 31 is formed via the conductor layer 6.
Even if the semiconductor light emitting element 2 is an insulator, by using a metal as a conductor as the conductor layer 6, using the conductor layer 6 as an electrode, the inorganic phosphor 31 can be formed by an electrodeposition method or an electrostatic coating method. The particle layer 34 can be formed.
（被覆層形成工程）
被覆層形成工程Ｓ１６は、半導体発光素子２の表面及び波長変換部材（無機蛍光体３１）の粒子の表面を連続的に被覆する無機材料からなる被覆層３２を形成する工程である。
被覆層形成工程Ｓ１６において、図５（ｅ）に示すように、蛍光体層形成工程Ｓ１４で形成した無機蛍光体３１の粒子層３４を被覆し、粒子同士を固着させる被覆層３２を形成する。被覆層形成工程Ｓ１６において、被覆層３２は、ＡＬＤ法やＭＯＣＶＤ法などによって形成することができる。無機蛍光体３１の粒子は被覆層３２によって被覆されると共に、無機蛍光体３１の粒子及び透光性層５、並びに無機蛍光体３１の粒子同士が固着して、一体化した発光装置が得られる。
(Coating layer forming process)
The coating layer forming step S16 is a step of forming the coating layer 32 made of an inorganic material that continuously covers the surface of the semiconductor light emitting element 2 and the surface of the particles of the wavelength conversion member (inorganic phosphor 31).
In the coating layer forming step S16, as shown in FIG. 5E, the particle layer 34 of the inorganic phosphor 31 formed in the phosphor layer forming step S14 is coated to form a coating layer 32 for fixing the particles together. In the coating layer forming step S16, the coating layer 32 can be formed by an ALD method, an MOCVD method, or the like. The particles of the inorganic phosphor 31 are covered with the coating layer 32, and the particles of the inorganic phosphor 31 and the translucent layer 5 and the particles of the inorganic phosphor 31 are fixed to each other, thereby obtaining an integrated light emitting device. .
次に、この保護層７を形成する保護層形成工程について説明する。
保護層形成工程は、被覆層形成工程の後、最終個片化工程の前に、半導体発光素子２の表面及び波長変換部材（無機蛍光体３１）の粒子の表面を連続的に被覆する無機材料からなる被覆層３２の上部に酸化膜からなる保護層７を形成する工程である。
Next, a protective layer forming process for forming the protective layer 7 will be described.
The protective layer forming step is an inorganic material that continuously covers the surface of the semiconductor light emitting device 2 and the surface of the wavelength conversion member (inorganic phosphor 31) after the coating layer forming step and before the final singulation step. In this step, the protective layer 7 made of an oxide film is formed on the coating layer 32 made of
１、１Ａ、１Ｂ、１Ｃ 発光装置
２ 半導体発光素子
３ 蛍光体層（無機粒子層）
３１ 無機蛍光体（波長変換部材）
３２ 被覆層
３３ 空隙
３４ 粒子層（凝集体）
５ 透光性層
６ 導電体層
７ 保護層
８ フィラー粒子
１５ パッケージ
１５ａ 凹部
1, 1A, 1B, 1C Light emitting device 2 Semiconductor light emitting element 3 Phosphor layer (inorganic particle layer)
31 Inorganic phosphor ( wavelength conversion member)
32 Coating layer 33 Void 34 Particle layer (aggregate)
5 Translucent Layer 6 Conductor Layer 7 Protective Layer 8 Filler Particle 15 Package 15a Concave
Claims (9)
前記半導体発光素子の少なくとも上面に設けられ、前記半導体発光素子が発光する第１の波長の光を吸収し、前記第１の波長とは異なる第２の波長の光を発光する無機材料からなる波長変換部材の粒子を含有する無機粒子層と、を有し、
前記無機粒子層は、
前記粒子が、当該粒子同士又は前記半導体発光素子と接触することで連続的に繋がった凝集体と、
前記半導体発光素子の表面及び前記粒子の表面を連続的に被覆する無機材料からなる被覆層と、
前記被覆層で被覆された前記粒子、又は、前記被覆層で被覆された前記粒子及び前記被覆層で被覆された前記半導体発光素子によって取り囲まれた空隙と、
を有することを特徴とする発光装置。 A semiconductor light emitting device;
Said provided at least the upper surface of the semiconductor light emitting element, the wavelength of an inorganic material first absorbs light of a wavelength, emits light of a second wavelength different from said first wavelength, wherein the semiconductor light emitting element emits light An inorganic particle layer containing particles of the conversion member,
The inorganic particle layer is
Aggregates in which the particles are continuously connected by contacting the particles or the semiconductor light emitting element,
A coating layer made of an inorganic material that continuously covers the surface of the semiconductor light emitting element and the surface of the particles;
A void surrounded by the particles coated with the coating layer, or the particles coated with the coating layer and the semiconductor light emitting device coated with the coating layer ;
A light emitting device comprising:
前記被覆層の平均厚さが１０ｎｍ〜５０μｍであることを特徴とする請求項１又は請求項２に記載の発光装置。 The average particle diameter of the wavelength conversion member particles is 0.1 to 100 μm,
3. The light emitting device according to claim 1, wherein an average thickness of the coating layer is 10 nm to 50 μm.
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| JP2012100038A JP6051578B2 (en) | 2012-04-25 | 2012-04-25 | Light emitting device |
| CN201310100170.2A CN103367611B (en) | 2012-03-28 | 2013-03-26 | Wavelength conversion inorganic formed body and its manufacture method and light-emitting device |
| EP13161479.4A EP2645433B1 (en) | 2012-03-28 | 2013-03-27 | Wave-length conversion inorganic member, method for manufacturing the same, and light emitting device |
| KR1020130032959A KR101549736B1 (en) | 2012-03-28 | 2013-03-27 | Inorganic shaped body for converting wavelength and method for manufacturing the same, and light emitting device |
| US13/852,332 US8994259B2 (en) | 2012-03-28 | 2013-03-28 | Wave-length conversion inorganic member, and method for manufacturing the same |
| US14/590,520 US9835310B2 (en) | 2012-03-28 | 2015-01-06 | Wave-length conversion inorganic member, and method for manufacturing the same |
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| JP6246622B2 (en) | 2014-03-05 | 2017-12-13 | シャープ株式会社 | Light source device and lighting device |
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| US10700242B2 (en) | 2016-12-27 | 2020-06-30 | Nichia Corporation | Method of producing wavelength conversion member |
| DE102017104128A1 (en) | 2017-02-28 | 2018-08-30 | Osram Gmbh | Conversion element, optoelectronic component and method for producing a conversion element |
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