JP2013229146A - Lighting apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a lighting apparatus 1 excellent is heat radiation.SOLUTION: A lighting apparatus 1 includes a case 2 which has a long recessed part C on the lower surface and a plurality of grooves P of linear shape formed along the longitudinal direction on the inner surface of the recessed part C, and a light emitting device 3 which is installed along the longitudinal direction on the inner surface of the recessed part C of the case 2 and has a pair of fixing members 31 interposing in between a gap S along the longitudinal direction, a plate 32 bridged between the pair of fixing members 31, and a semiconductor light emitting element 33 installed at the lower face of the plate 32 and emitting light toward the lower side. Projected parts 31a in contact with along the longitudinal direction of the groove P are installed respectively at the inner upper end parts opposed to of the pair of fixing members 31.

Description

  The present invention relates to a lighting device including a semiconductor light emitting element.

  In recent years, a lighting device using a semiconductor light emitting element such as a light emitting diode (LED) as a light source has been developed (see, for example, Patent Document 1). An illuminating device having a semiconductor light emitting element has attracted attention in terms of power consumption or product life. This semiconductor light emitting device has been researched and developed as to how to dissipate heat generated during light emission to the outside.

JP 2012-14950 A

  An object of this invention is to provide the illuminating device which can thermally radiate | emit efficiently the heat | fever which a semiconductor light-emitting device emits outside.

  An illumination device according to an embodiment of the present invention includes a housing having a long concave portion on a lower surface, and a plurality of linear grooves formed in an inner surface of the concave portion along a longitudinal direction. A pair of fixing members provided along the longitudinal direction on the inner surface of the recess, sandwiching a gap along the longitudinal direction, a plate body spanned between the pair of fixing members, and the plate body A light-emitting device having a semiconductor light-emitting element that emits light downward, provided on the lower surface of each of the pair of fixing members, the inner upper ends facing each other in the longitudinal direction in the groove. Protruding portions that are in contact with each other are provided.

  ADVANTAGE OF THE INVENTION According to this invention, the illuminating device which can thermally radiate | emit efficiently the heat | fever which a semiconductor light-emitting element emits outside can be provided.

It is an external appearance perspective view of the illuminating device which concerns on this embodiment, Comprising: The state when the illuminating device is seen upwards from the downward direction is shown. It is a general | schematic perspective view of the illuminating device which concerns on this embodiment, Comprising: The state when the illuminating device is looked down from upper direction is shown. It is a top view of the illuminating device which concerns on this embodiment, Comprising: The state when the illuminating device is looked down from upper direction is shown. It is sectional drawing in alignment with XX of the illuminating device shown in FIG. It is an expanded sectional view of A part of the illuminating device shown in FIG. It is an expanded sectional view of B section of the illuminating device shown in FIG. It is sectional drawing along XX of the illuminating device shown in FIG. 3, Comprising: The heat | fever transfer method of an illuminating device is shown. It is the perspective view which showed the inside of the semiconductor light-emitting device which is a part of illuminating device. It is sectional drawing along YY of the semiconductor light-emitting device shown in FIG.

  Embodiments of a lighting device according to the present invention will be described below with reference to the accompanying drawings. In addition, this invention is not limited to the following embodiment.

<Configuration of lighting device>
The lighting device 1 is directly attached to a room such as a ceiling or a wall, or is used outdoors. And the light emitted from the illuminating device 1 can illuminate indoors or outdoors. The lighting device 1 has a long concave portion C on the lower surface, a housing 2 in which a plurality of linear grooves P are formed along the longitudinal direction on the inner surface of the concave portion C, and a concave portion C of the housing 2. And a light emitting device 3 provided.

  The housing 2 is attached to an external ceiling or the like. The housing 2 is made of a material that can efficiently dissipate heat transmitted from the light emitting device 3 to the outside. For example, a metal such as aluminum, copper, or stainless steel, plastic, resin, or a metal member is incorporated in plastic or resin. It consists of assembly members. The thermal conductivity of the housing 2 is set to, for example, 10 W / m · K or more and 500 W / m · K or less. The housing 2 is connected to the outside such as a ceiling via a fixing member such as a screw or a bolt.

  The casing 2 is provided with a long concave portion C on the lower surface. The housing 2 has a rectangular shape in plan view, and the length of one side is set to, for example, 100 mm or more and 1000 mm or less. The concave portion C has a semi-cylindrical shape and is continuously formed from one end to the other end of the housing 2. The concave portion C has a vertical length of, for example, 10 mm or more and 30 mm or less, and a length from one end to the other end of the housing 2 of, for example, 100 mm or more and 1000 mm or less.

  Further, the housing 2 has a plurality of linear grooves P formed on the inner surface of the recess C. The groove P is formed continuously from one end of the housing 2 to the other end. The depth of the groove P from the inner surface of the recess C is set to, for example, 0.5 mm or more and 5 mm or less. Further, as shown in FIG. 5 or FIG. 6, the plurality of grooves P are not provided in the vicinity of the end portion of the recess C in the cross section orthogonal to the longitudinal direction, and are regularly arranged at the bottom portion of the recess C. It is provided at intervals. The groove P has a triangular shape in a cross section perpendicular to the longitudinal direction, and is set so that the apex of the triangular shape is curved.

  The groove P can disperse the stress applied to the groove P by the heat from the light emitting device 3 generated when the lighting device 1 is operated at the triangular apex formed to be curved. As a result, the groove P can suppress cracks and cracks in the housing 2 that occur from a triangular apex. The groove P may be semicircular. In particular, the stress caused by the heat from the light emitting device 3 generated when the lighting device 1 is operated is dispersed on the surface of the groove P formed in the semicircular shape. It is also possible to further suppress cracks and cracks in the housing 2 that occur from the starting point.

  The light emitting device 3 is provided on the inner surface of the recess C of the housing 2 along the longitudinal direction. The light emitting device 3 emits light when electricity flows from an external power source. The light emitting device 3 is provided along the longitudinal direction on the inner surface of the concave portion C of the housing 2, and in a cross section orthogonal to the longitudinal direction, a pair of fixing members 31 sandwiching the gap S along the longitudinal direction, and a pair of fixings A plate body 32 spanned between the members 31 and a semiconductor light emitting element 33 that is provided on the lower surface of the plate body 32 and emits light downward are provided.

  The light emitting device 3 is fixed to the housing 2 using screws N. As shown in FIG. 5, the pair of fixing members 31 is screwed to the screw N from the back surface side of the housing 2 via the housing 2. The thermal conductivity of the screw N is set to, for example, 10 W / m · K or more and 500 W / m · K or less. The place where the screw N is provided is not limited to the lower portion of the fixing member 31 with respect to the plate body 32 as long as the light emitting device 3 can be fixed to the housing 2, and the light emitting device 3 is screwed to the housing 2. You may fix using welding etc. besides a stop.

  In addition, each of the facing inner upper ends of the pair of fixing members 31 is provided with a convex portion 31 a that abuts in the groove P along the longitudinal direction. As shown in FIG. 5, the pair of fixing members 31 has a lower end portion of the fixing member 31 fixed to the housing 2 by a screw N, and a convex portion 31 a located at an inner upper end portion of the fixing member 31 has an elastic force. It is in contact with the groove P of the body 2. The semiconductor light emitting element 33 generates heat during light emission, and the heat is transmitted to the fixing member 31 via the plate body 32. Therefore, the fixing member 31 can be transmitted from the convex portion 31 a to the housing 2 by providing the convex portion 31 a that contacts the inside of the groove P. Then, the heat generated by the semiconductor light emitting element 33 can make the fixing member 31 or the plate body 32 difficult to be thermally deformed, and the light emitting device 3 can be prevented from being destroyed. In addition, it is possible to suppress a decrease in light emission efficiency due to an increase in the temperature of the semiconductor light emitting element 33, or a change in color of emitted light due to a change in emission spectrum. In addition, the convex part 31a is a magnitude | size which protruded 0.5 mm or more and 5 mm or less upwards from the side surface of the fixing member 31, for example, and is set to the magnitude | size which fits into the groove | channel P of the recessed part C. The pair of fixing members 31 are made of, for example, a metal such as aluminum, copper, or stainless steel, plastic, resin, or an assembly member in which a metal member is incorporated in plastic or resin. The thermal conductivity of the pair of fixing members 31 is set to 10 W / m · K or more and 500 W / m · K or less, for example.

  The groove P may have a triangular shape in a cross section orthogonal to the longitudinal direction, and the convex portion 31a may be set in a semicircular shape different from the shape of the groove P in a cross section orthogonal to the longitudinal direction. For example, when the light emitting device 3 is screwed to the housing 2 so that the light emission direction can be arbitrarily changed by rotating the light emitting device 3 along the inner peripheral surface of the recess C, the groove P and Since the contact area with the convex portion 31a can be reduced, play due to wear of each member, that is, a gap or the like hardly occurs between the light emitting device 3 and the housing 2, and the light emitting device 3 can be held at a desired angle with respect to the housing 2. Can be fixed to.

  The convex portion 31a may have the same shape as the outer shape of the groove P. In this case, the heat generated from the semiconductor light emitting element 33 is increased from the plate 32 and the fixing member 31 through the protrusion 31a and the groove P due to the increase in the contact area between the protrusion 31a and the groove P. It becomes easy to transmit to the body 2, and the heat dissipation from the light-emitting device 3 to the housing | casing 2 can be improved.

  The housing 2 efficiently dissipates the heat generated by the light emitting device 3 to the outside, thereby reducing changes in the inclination angle of the light emitting device 3 and the direction of light emitted from the light emitting device 3, and the light emitting device 3. Maintains the directivity, light distribution, light output, and light color of the light extracted outside by suppressing the light output emitted from the light source, that is, the decrease in the luminous flux and the fluctuation of the light color. can do. The thermal conductivity of the housing 2 is set to, for example, 10 W / m · K or more and 500 W / m · K or less. The housing 2 is connected to the outside such as a ceiling via a fixing member such as a screw or a bolt.

  The plate body 32 is used to fix the pair of fixing members 31 and mount the wiring substrate 35 on which the semiconductor light emitting element 33 is mounted. As shown in FIG. 4 or 5, the plate body 32 has one end connected to one of the pair of fixing members 31 and the other end connected to the other end of the pair of fixing members 31. The plate 32 is made of, for example, a metal such as aluminum, copper, or stainless steel, plastic, resin, or an assembly member in which a metal member is incorporated in plastic or resin. The thermal conductivity of the plate body 32 is set to, for example, 10 W / m · K or more and 500 W / m · K or less.

In the light emitting device 3, a translucent cover 34 that covers the plate body 32 and the semiconductor light emitting element 33 is held at the inner lower ends of the pair of fixing members 31. The translucent cover 34 has a plate shape and is held by a pair of fixing members 31. The translucent cover 34 protects the semiconductor light emitting element 33 from the outside. The translucent cover 34 is made of a material through which light emitted from the semiconductor light emitting element 33 is transmitted. For example, the translucent cover 34 is made of a light transmissive material such as resin or glass. Then, the light emitted from the semiconductor light emitting element 33 passes through the translucent cover 34 and is extracted outside. The translucent cover 34 can be slid on the fixing member 31 in the planar direction along the lower surface of the plate 32 and can be hooked or clamped on the inner lower end of the fixing member 31. The translucent cover 34 has a side length of, for example, 200 mm or more and 2000 mm or less when viewed in plan. The thickness of the translucent cover 34 in the vertical direction is set to, for example, not less than 0.5 mm and not more than 5 mm.

  Further, a wiring substrate 35 on which a plurality of semiconductor light emitting elements 33 are mounted is provided on the lower surface of the plate body 32. The wiring board 35 is a long plate having a rectangular parallelepiped shape and having a length in the longitudinal direction substantially the same as the opening of the light emitting device 3. As the wiring substrate 35, for example, a resin substrate such as a printed wiring substrate made of resin, a glass substrate, or a metal plate such as an aluminum substrate having a wiring pattern formed on the upper surface thereof is used. The wiring board 35 has a side length of, for example, 200 mm or more and 2000 mm or less in a plan view, and a vertical thickness of 0.5 mm or more and 3 mm or less, for example. The wiring board 35 is fixed to the plate body 32 with screws or a heat conductive adhesive.

  A plurality of semiconductor light emitting elements 33 are mounted on the wiring board 35. The plurality of semiconductor light emitting elements 33 are arranged on the line along the longitudinal direction of the wiring substrate 35. The plurality of semiconductor light emitting elements 33 are arranged along the grooves P provided along the longitudinal direction on the inner surface of the recess C. The semiconductor light emitting element 33 includes a mounting substrate 331, an optical semiconductor element 332 provided on the mounting substrate 331, a frame body 333 surrounding the optical semiconductor element 332, and a sealing resin 334 provided in a region surrounded by the frame body 333. And a wavelength conversion member 336 that is supported and connected to the frame body 333 through an adhesive resin 335. The semiconductor light emitting element 33 emits light from the optical semiconductor element 332 to the outside when electrons and holes in the pn junction in the optical semiconductor element 332 are recombined.

  The mounting substrate 331 is provided on the wiring substrate 35. The wiring board 35 and the mounting board 331 are joined so as to be electrically connected via solder or a conductive adhesive. The mounting substrate 331 can be made of, for example, a ceramic material such as alumina, mullite, or glass ceramics, or a composite material obtained by mixing a plurality of these materials. For the mounting substrate 331, a polymer resin in which metal oxide fine particles are dispersed can be used.

  When the surface of the mounting substrate 331 is a diffusion surface, the light emitted from the optical semiconductor element 332 is irradiated on the surface of the mounting substrate 331 and diffusely reflected. Then, light emitted from the optical semiconductor element 332 can be emitted in multiple directions by diffuse reflection, and the light emitted from the optical semiconductor element 332 can be suppressed from being concentrated at a specific portion of the wavelength conversion member 336.

  Here, the mounting substrate 331 is provided with a wiring conductor, and is electrically connected to the wiring substrate 35 via the wiring conductor. The wiring conductor is made of a conductive material such as tungsten, molybdenum, manganese, or copper. The wiring conductor is obtained, for example, by printing a metal paste obtained by adding an organic solvent to a powder such as tungsten on the mounting substrate 331 in a predetermined pattern. For example, a plating layer such as nickel or gold is formed on the surface of the wiring conductor to prevent oxidation. When the mounting substrate 331 is made of a resin material, the organic substrate processed into a sheet shape is subjected to a plating process or the like, and a lead frame is placed in the mold and the molding resin is poured into the mold by a transfer molding process. It can be produced by heating and pressing together with curing.

The optical semiconductor element 332 is electrically connected to the mounting substrate 331 via, for example, an adhesive material such as solder or a conductive adhesive, or a bonding wire. The optical semiconductor element 332 uses a chemical vapor deposition method such as a metal organic chemical vapor deposition method or a molecular beam epitaxial growth method on a substrate such as sapphire, gallium nitride, aluminum nitride, zinc oxide, silicon carbide, silicon, or zirconium diboride. Thus, the semiconductor layer is grown.

The optical semiconductor element 332 includes a first semiconductor layer, a light emitting layer formed on the first semiconductor layer, and a second semiconductor layer formed on the light emitting layer. The first semiconductor layer, the light emitting layer, and the second semiconductor layer are, for example, a group III nitride semiconductor, a group III-V semiconductor such as gallium phosphide or gallium arsenide, or a group III nitride such as gallium nitride, aluminum nitride, or indium nitride. A physical semiconductor or the like can be used. Note that the thickness of the first semiconductor layer is, for example, not less than 1 μm and not more than 5 μm. The thickness of the light emitting layer is, for example, 25 nm or more and 150 nm or less. The thickness of the second semiconductor layer is, for example, not less than 50 nm and not more than 600 nm. In addition, the optical semiconductor element 332 configured as described above can emit excitation light having a wavelength range of 370 nm to 420 nm, for example.

  A frame-shaped frame 333 is provided on the mounting substrate 331 so as to surround the optical semiconductor element 332. The frame body 333 is connected to the mounting substrate 331 via, for example, solder or an adhesive. The frame 333 is a mixture of a ceramic material such as aluminum oxide, titanium oxide, zirconium oxide or yttrium oxide, or a porous material, or a powder made of a metal oxide such as aluminum oxide, titanium oxide, zirconium oxide or yttrium oxide. Made of resin material. The frame 333 is made of a ceramic material, a porous material, or a resin material. The surface of the frame 333 is formed with a sintered body, a large number of fine holes are formed, or a powder made of a metal oxide is arranged. Or

  The frame 333 is formed so as to surround the optical semiconductor element 332 with a space from the optical semiconductor element 332. Further, the frame body 333 is formed so that the inclined inner wall surface spreads outward from the lower end according to the upper end. The inner wall surface of the frame 333 functions as a reflection surface for excitation light emitted from the optical semiconductor element 332. When the inner wall surface of the frame 333 is a diffusion surface, the light emitted from the optical semiconductor element 332 is diffusely reflected on the inner wall surface of the frame 333. And it can suppress that the light emitted from the optical-semiconductor element 332 concentrates on the specific location of the wavelength conversion member 336. FIG.

  The inclined inner wall surface of the frame body 333 is, for example, a metal layer made of tungsten, molybdenum, manganese, or the like on the inner peripheral surface of the frame body 333 made of a sintered material, and nickel, silver, gold, or the like that covers the metal layer. A plated metal layer made of may be formed. The plated metal layer has a function of reflecting light emitted from the optical semiconductor element 332. The inclination angle of the inner wall surface of the frame 333 is set to an angle of 55 degrees or more and 70 degrees or less with respect to the upper surface of the mounting substrate 331, for example.

  A region surrounded by the frame body 333 is filled with a sealing resin 334. The sealing resin 334 has a function of sealing the optical semiconductor element 332 and transmitting light emitted from the optical semiconductor element 332. The sealing resin 334 is a region surrounded by the frame body 333 in a state where the optical semiconductor element 332 is accommodated inside the frame body 333. For example, the sealing resin 334 is a translucent material such as a silicone resin, an acrylic resin, or an epoxy resin. Insulating resin is used.

  The wavelength conversion member 336 is supported by the frame body 333 and provided so as to face the optical semiconductor element 332 with a space therebetween. That is, the wavelength conversion member 336 is provided on the frame body 333 via the sealing resin 334 that seals the optical semiconductor element 332 and the gap.

The wavelength conversion member 336 is joined to the frame body 333 via an adhesive resin 335. The adhesive resin 335 is attached from the end of the lower surface of the wavelength conversion member 336 to the side surface of the wavelength conversion member 336 and further to the end of the upper surface of the wavelength conversion member 336.

  As the adhesive resin 335, for example, a thermosetting resin such as a polyimide resin, an acrylic resin, an epoxy resin, a urethane resin, a cyanate resin, a silicone resin, or a bismaleimide triazine resin can be used. Further, as the adhesive resin 335, for example, a thermoplastic resin such as a polyether ketone resin, a polyethylene terephthalate resin, or a polyphenylene ether resin can be used.

  As the material of the adhesive resin 335, a material having a thermal expansion coefficient having a size between the thermal expansion coefficient of the frame 333 and the thermal expansion coefficient of the wavelength conversion member 336 is selected. By selecting such a material as the material of the adhesive resin 335, when the frame body 333 and the wavelength conversion member 336 are thermally expanded, they are about to peel off due to the difference in the coefficient of thermal expansion between them. Can be suppressed, and both can be well connected.

  By adhering the adhesive resin 335 to the end of the lower surface of the wavelength conversion member 336, the area to which the adhesive resin 335 is applied can be increased, and the frame 333 and the wavelength conversion member 336 can be firmly connected. In addition, heat generated in the wavelength conversion member 336 can be radiated to the frame body 333 through the adhesive resin 335. As a result, the connection strength between the frame body 333 and the wavelength conversion member 336 can be improved, the bending of the wavelength conversion member 336 is suppressed, and the temperature increase of the wavelength conversion member 336 is suppressed. In addition, the optical distance between the optical semiconductor element 332 and the wavelength conversion member 336 can be effectively suppressed, and the wavelength conversion efficiency of the wavelength conversion member 336 and the fluctuation of the emission spectrum can be suppressed. it can.

  The wavelength conversion member 336 emits light when excitation light emitted from the optical semiconductor element 332 is incident on the inside and the phosphor contained therein is excited. Here, the wavelength conversion member 336 is made of, for example, a silicone resin, an acrylic resin, an epoxy resin, or the like, and a blue phosphor that emits fluorescence of, for example, 430 nm or more and 490 nm or less, for example, fluorescence of 500 nm or more and 560 nm or less of the resin. A green phosphor that emits light, for example, a yellow phosphor that emits fluorescence of 540 to 600 nm, for example, a red phosphor that emits fluorescence of 590 to 700 nm is contained. The phosphor is contained so as to be uniformly dispersed in the wavelength conversion member 336. In addition, the thickness of the wavelength conversion member 336 is set to 0.5 or more and 3 mm or less, for example.

  Moreover, the thickness of the edge part of the wavelength conversion member 336 is set constant. The thickness of the wavelength conversion member 336 is set to 0.5 mm or more and 3 mm or less, for example. Here, the constant thickness includes a thickness error of 0.1 mm or less. By making the thickness of the wavelength conversion member 336 constant, the amount of light excited by the wavelength conversion member 336 can be adjusted to be uniform, and uneven brightness in the wavelength conversion member 336 can be suppressed. it can.

  The semiconductor light emitting element 33 has the above-described structure, and emitted light is extracted outside through the translucent cover 34, and heat generated during light emission is transmitted to the wiring substrate 35. The heat transferred from the semiconductor light emitting element 33 to the wiring board 35 is most easily transferred to a part of the wiring board 35 located immediately above the semiconductor light emitting element 33. Therefore, by providing the gap S in the region sandwiched between the pair of fixing members 31, the heat transferred from the wiring board 35 to the plate body 32 is transferred from the plate body 32 toward the fixing member 31, as shown in FIG. It can be made easier.

In the light emitting device 3, a recessed portion D is formed on the outer surface of the pair of fixing members 31 along the longitudinal direction. The recessed portion D is arranged so as to overlap the groove Pa closest to the edge of the recessed portion C among the plurality of grooves P. As shown in FIG. 5 or FIG. 6, a plurality of triangular gaps are formed between the side surface of the fixing member 31 and the groove P at a location where the hollow portion D is not provided. Further, the groove Pa closest to the edge of the recess D and the recess C can provide a larger space than the triangular gap surrounded by the side surface of the fixing member 31 and the groove P. The gap is filled with air, and as shown in FIG. 7, heat transfer is hindered by the air, and is easily transferred to a place where the fixing member 31 and the housing 2 are in direct contact. In addition, the recess D is disposed so as to overlap the groove Pa closest to the edge of the recess C among the plurality of grooves P, so that the groove Pa and the recess D are connected to the end of the recess C, the light emitting device 3, and the like. A liquid such as water entering from the abutting portion can be stored in the cavity farthest from the opening made of the pair of fixing members 31 and into the light emitting device 3 from the opening made of the pair of fixing members 31. The possibility of liquid intrusion can be suppressed, and failure of the lighting device 1 due to liquid intrusion into the light emitting device 3 can be suppressed.

  As shown in FIG. 7, the heat generated by the semiconductor light emitting element 33 is transmitted from the semiconductor light emitting element 33 to the plate body 32, and is transmitted from the plate body 32 to the fixing member 31. In the fixing member 31, heat is largely divided into two directions d <b> 1 and d <b> 2 by a gap surrounded by the side surface of the fixing member 31 and the groove P. One of the two directions d1 is transmitted from the fixing member 31 to the vicinity of the opening edge of the recess C. The other d2 of the two directions is transmitted to the vicinity of the bottom of the recess C via the inner upper end of the fixing member 31. The heat divided into d2 is distributed to the housing 2 while being dispersed at the contact portion with the side surface of the fixing member 31 provided between the adjacent grooves P until it is transmitted to the inner upper end portion of the fixing member 31. Heat is dissipated. If there is no gap surrounded by the side surface of the fixing member 31 and the groove P, the heat transmitted to the fixing member 31 is not easily transmitted to the inner upper end of the fixing member 31 and is concentrated near the opening edge of the recess C. And become easier to communicate. As a result, the heat generated by the semiconductor light emitting element 33 concentrates on a specific location of the housing 2, cracks occur in the housing 2 or the light emitting device 3, and the housing discolors due to the heat concentrated on the specific location. There is a high risk that the lighting device will be damaged or a defect in appearance will occur. On the other hand, the lighting device according to the present embodiment can disperse the heat transmitted from the fixing member 31 to the housing 2 by providing a gap between the side surface of the fixing member 31 and the groove P, and the housing 2 or the light emission. It is possible to reduce the possibility of cracks in the device 3 or discoloration of the surface.

  Further, the heat generated by the semiconductor light emitting element 33 can be transmitted from the light emitting device 3 to the housing 2 via a screw N that fixes the light emitting device 3 to the housing 2 as shown in FIG. By providing the screw N at the base of the pair of fixing members 31 connected to the plate body 32, the heat transmitted to the base of the fixing member 31 can be efficiently transmitted from the fixing member 31 to the housing 2.

  In the lighting device 1 according to the present embodiment, the protrusion 31a of the fixing member 31 is provided so as to fit into the groove P of the recess C of the housing 2, so that the heat generated by the semiconductor light emitting element 33 can be efficiently generated. Heat can be radiated to the bottom of the concave portion C of the housing 2 through the convex portion 31a. Then, the heat generated by the semiconductor light emitting element 33 can be easily transmitted to the entire recess C of the housing 2, and the concentration of thermal stress on a specific location of the housing 2 can be reduced. As a result, it is possible to prevent the light emitting device 3 from moving from a desired position with respect to the housing 2 due to thermal deformation of the housing 2, and to prevent the traveling direction of light extracted outside from being changed. It is possible to suppress the discoloration of the surface of the fixing member 2 and the light emitting device 3 due to the concentration of heat at a specific location, and it is possible to suppress defects in the appearance of the lighting device 1.

  In addition, this invention is not limited to the above-mentioned embodiment, A various change, improvement, etc. are possible in the range which does not deviate from the summary of this invention.

<Manufacturing method of lighting device>
Here, a method of manufacturing the lighting device shown in FIG. 1 will be described. First, the semiconductor light emitting element 33 is prepared. When the mounting substrate 331 and the frame 333 are made of, for example, an aluminum oxide sintered body, an organic binder, a plasticizer, a solvent, or the like is added to and mixed with the aluminum oxide raw material powder to obtain a mixture.

  As the mounting substrate 331, a mixture formed into a sheet-like ceramic green sheet is used. Further, the frame 333 is filled with the mixture in the mold of the frame 333 and dried, and the frame 333 before sintering is taken out.

  Moreover, a high melting point metal powder such as tungsten or molybdenum is prepared, and an organic binder, a plasticizer, a solvent, or the like is added to and mixed with the powder to obtain a metal paste. And it prints with the predetermined pattern on the ceramic green sheet used as the prepared mounting board | substrate 331, a some ceramic green sheet is laminated | stacked, it bakes, and it cut | disconnects to a predetermined shape. The frame 333 is formed by sintering at a desired temperature.

  Next, after the optical semiconductor element 332 is electrically mounted on the wiring pattern on the mounting substrate 331 via solder, the frame 333 is attached to the substrate with an adhesive such as an acrylic resin so as to surround the optical semiconductor element 332. Glue through. The region surrounded by the frame body 333 is filled with, for example, a silicone resin, and the silicone resin is cured, thereby forming the sealing resin 334.

  Next, the wavelength conversion member 336 is prepared. The wavelength conversion member 336 can be produced by mixing a phosphor with an uncured resin and using, for example, a sheet molding technique such as a doctor blade method, a die coater method, an extrusion method, a spin coating method, or a dip method. it can. For example, the wavelength conversion member 336 can be obtained by filling an uncured wavelength conversion member 336 into a mold, curing it, and taking it out. And the semiconductor light emitting element 33 is producible by adhere | attaching the prepared wavelength conversion member 336 on the frame 333 via the adhesive resin 335 which consists of resin, for example.

  Next, the fixing member 31, the plate body 32, and the housing | casing 2 are prepared. The fixing member 31 and the plate body 32 are integrally formed by, for example, an extrusion method. However, it is not necessarily formed by integral molding, and each member may be manufactured separately and fastened by a fastening means such as a screw, or each member may be bonded and integrated with an adhesive. Also good. Similarly, the housing 2 is formed by, for example, an extrusion method.

  Further, the wiring board 35 is prepared. As the wiring board 35, for example, a printed wiring board can be used. Then, the semiconductor light emitting element 33 is mounted on the wiring board 35. The wiring board 35 on which the semiconductor light emitting element 33 is mounted is provided by screwing to the lower surface of the plate body 32. Further, the translucent cover 34 is slid and fitted to the pair of fixing members 31 so as to cover the semiconductor light emitting element 33 and the wiring board 35 with the translucent cover 34. In this way, the light emitting device 3 can be manufactured.

  Further, the light emitting device 3 is fitted into the concave portion C of the housing 2, and the convex portion 31 a is brought into contact with the groove P and positioned. And the illuminating device 1 can be produced by screwing to the housing | casing 2 and fixing both so that it can move, rotating the light-emitting device 3 along the internal peripheral surface of the recessed part C. FIG.

DESCRIPTION OF SYMBOLS 1 Illuminating device 2 Case 3 Light-emitting device 31 Fixing member 31a Protruding part 32 Plate body 33 Semiconductor light emitting element 331 Mounting substrate 332 Optical semiconductor element 333 Frame body 334 Sealing resin 335 Adhesive resin 336 Wavelength conversion member 34 Translucent cover 35 Wiring Substrate C Recess P Groove S Gap D Recess N Screw

Claims (3)

A casing having a long concave portion on the lower surface, and a plurality of linear grooves formed along the longitudinal direction on the inner surface of the concave portion,
A pair of fixing members provided along the longitudinal direction on the inner surface of the concave portion of the housing, with a gap along the longitudinal direction interposed therebetween, a plate body spanned between the pair of fixing members, and A light emitting device having a semiconductor light emitting element that emits light downward provided on the lower surface of the plate,
Each of the facing inner upper ends of the pair of fixing members is provided with a convex portion that is in contact with the longitudinal direction in the groove. The lighting device according to claim 1,
In the light emitting device, a translucent cover that covers the plate body and the semiconductor light emitting element is held at inner lower ends of the pair of fixing members. The lighting device according to claim 1 or 2,
In the light emitting device, a recess is formed along the longitudinal direction on the outer surfaces of the pair of fixing members, and the recess overlaps a groove closest to the edge of the recess among the plurality of grooves. A lighting device characterized by that.

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