JP2013227162A - Crucible - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a crucible that makes a seed crystal crystally grow in a source of a material.SOLUTION: A crucible includes: a growth chamber; a retainer; a reflection device; and a plurality of gas inducing devices. The retainer is located above the growth chamber to fix a seed crystal. The reflection device is located around the retainer. The plurality of gas inducing devices are located downward of the growth chamber to accommodate a source of a material and induces the source of the vaporized material.

Description

  The present invention relates to a crucible, and more particularly to a crucible in which the thermal radiation temperature gradient gap of crystal growth becomes denser.

  The physical vapor transport method (Physical Vapor Transport, PVT) and the physical vapor deposition method (Physical Vapor Deposition, PVD) are silicon carbide crystal growth techniques and mass prochip techniques. For example, the silicon carbide crystal growth method disclosed in US Pat. No. 5,746,827 uses a physical vapor transport method (PVT) to grow a large crystal. However, the yield of the crystal is low because the temperature gradient gap is too large, the protective gas pressure is too low, and the control of the seed crystal temperature and sublimation gas pressure is not stable and the process stability is insufficient. However, capillaries (pyrolysis pores) and polycrystals are formed and become invalid.

US Pat. No. 7,316,747 discloses a method for growing high quality silicon carbide crystals by thermal radiation transmission. However, the above method has the disadvantage that the thermal electric field is unbalanced, the decomposition rate of the powder source is different, the gas concentration in the growth chamber becomes unstable, the partial pressure in the growth chamber changes, and One kind of control becomes more difficult.

  US Pat. No. 6,824,611 discloses a method for controlling and strengthening single crystal growth of high quality silicon carbide. However, according to this method, silicon carbide is grown at a high temperature due to the reactive nature of silicon, and in the sublimation process, it reacts with the vessel wall made of graphite, and the reaction is too difficult to control. Carbon and silicon are generated, and the gas composition component changes during the sublimation process. In addition, silicon atoms collide with the container wall made of graphite, become carbon scrap, become impurities in the crystal, and adversely affect the purity of the crystal.

Therefore, there is a demand for a new crystal growth facility capable of producing a high-quality silicon carbide crystal with a denser thermal radiation temperature gradient gap for crystal growth, a stable gas flow in the growth chamber, and a high quality silicon carbide crystal.

  The inventors of the present invention have studied carefully in order to eliminate the above-mentioned drawbacks, and propose the present invention in which the above-mentioned disadvantages can be effectively eliminated by utilizing science and the design is rational.

US patent US5,746,827 US patent US7,316,747 US patent US6,824,611

The main object of the present invention is to provide a crucible in which the gap of the thermal radiation temperature gradient of crystal growth becomes denser.

In order to achieve the above object, a crucible according to the present invention is grown on a seed crystal by a material source, and the crucible includes a growth chamber, a cage, a reflection device, and a plurality of gas guiding devices. Provided. The cage is located above the growth chamber and fixes the seed crystal. The reflection device is located around the cage. A plurality of gas directing devices are located below the growth chamber, house a source of material, and guide the source of vaporized material.

In the first embodiment of the present invention, the plurality of gas guiding devices have a needle shape.

In the second embodiment of the present invention, the plurality of gas guiding devices have a rod shape.

In the third embodiment of the present invention, the plurality of gas guiding devices have a sheet shape and are arranged concentrically.

In the fourth embodiment of the present invention, the plurality of gas guiding devices have a sheet shape and are arranged in a spiral shape.

It is a conceptual diagram of the crucible of the first embodiment of the present invention. It is a conceptual diagram of the crucible of the first embodiment of the present invention. It is a conceptual diagram of the crucible of the reflecting device in which the installation angle of the first embodiment of the present invention is adjusted. It is a partial conceptual diagram of the crucible of the reflecting device in which the installation angle of the first embodiment of the present invention is adjusted. It is a top view of the crucible of the first embodiment of the present invention. It is a top view of the crucible of the second embodiment of the present invention. It is a top view of the crucible of the third embodiment of the present invention. It is a top view of the crucible of the 4th example of the present invention.

  Hereinafter, the features and technical contents of the present invention will be described in detail with reference to the drawings. However, the drawings and the like are for reference and explanation, and the present invention is not limited thereby.

The crucible of the first embodiment according to the present invention will be described below with reference to FIGS. 1 is a conceptual diagram of the crucible of the first embodiment of the present invention, FIG. 2 is a conceptual diagram of the crucible of the first embodiment of the present invention, and FIG. 3 is a reflection device of the first embodiment of the present invention. FIG. 4 is a partial conceptual view of a crucible in which the installation angle of the reflector according to the first embodiment of the present invention is adjusted.

As shown in FIGS. 1 to 4, in the first embodiment of the present invention, the crucible 1 includes a seed crystal 90, a material source 91, and a physical vapor transport method (Physical vapor transport method).
Vapor Transport (PVT) and physical vapor deposition
Crystal growth is performed by Vapor Deposition (PVD), but the crystal growth method is not limited by the above. The crucible 1 is provided with a growth chamber 10, a holder 20, a reflecting device 30, and a plurality of gas guiding devices 40.

The growth chamber 10 accommodates a material source 91 and grows a seed crystal 90. While the growth chamber 10 is resistant to high temperatures, heat energy can be transferred from the outside to the inside of the growth chamber 10, and the inside can be heated to grow crystals. The holder 20 is located above the growth chamber 10 and fixes the seed crystal 90. The reflection device 30 is positioned around the cage 20, and the reflection device 30 can adjust the installation angle A to an arbitrary angle within a range of 0 degrees to 30 degrees (as shown in FIG. 4). The reflection device 30 is made of the same material as the high-temperature metal carbide, the growth chamber 10 or the material source 91, and the reflection device 30 can withstand temperatures of 1500 ° C. to 3000 ° C. The reflection device 30 can reflect the internal heat radiation L (as shown in FIG. 2) to the plurality of gas guiding devices 40. With different installation angles A, the reflector 30 can adjust the reflection angle of the thermal radiation L, thereby modulating the thermal electric field, and also suppress the influence of the temperature gradient on the temperature distribution in the region, reducing the occurrence of capillary it can. Further, the angle range of the installation angle A is not limited to 0 degrees to 30 degrees, and may be a larger angle range, and the temperature that the reflection device 30 can withstand is not limited by the above.

FIG. 5 is a top view of the crucible of the first embodiment of the present invention.

  As shown in FIG. 5, the plurality of gas guiding devices 40 are located below the growth chamber 10, and the plurality of gas guiding devices 40 are arranged at equal distances from the center of the plurality of gas guiding devices 40 to the outside. The height of the gas guiding device 40 near the center is higher than the height of the gas guiding device 40 near the outside. The plurality of gas guiding devices 40 are made of a high-temperature metal carbide or a material that is the same material as the growth chamber 10 or the material source 91. The height of the plurality of gas guiding devices 40 is higher than the height of the material source 91 housed in the growth chamber 10. When the source 91 of the material stored in the growth chamber 10 is in a gaseous state upon receiving heat, the gas source 91 is guided to rise by the plurality of gas guiding devices 40 and is vaporized. After the source 91 of material is grown in contact with the seed crystal 90 and the vaporized material source 91 rises, the source 91 of the material that has not been vaporized becomes gaseous and the source 91 of the vaporized material Replenish the space after the rise, and the source 91 of material below the growth chamber 10 can rise continuously in a gaseous state. In the first embodiment, the plurality of gas guiding devices 40 have a needle shape and a substantial diameter of 2 millimeters or less. Further, the shapes and diameters of the plurality of gas guiding devices 40 are not limited by the above.

In the present invention, the high-temperature metal carbide for producing the reflecting device 30 and the plurality of gas guiding devices 40, and the material that is the same material as the growth chamber 10 or the material source 91 are oxide, carbide, nitride, or fluoride. Although included, the invention is not so limited.

FIG. 6 is a top view of the crucible of the second embodiment of the present invention.

As shown in FIG. 6, the second embodiment of the present invention is the same as the first embodiment, and the shape of the plurality of gas guiding devices 40a of the crucible 1a is rod-shaped, and the substantial diameter thereof is 2 millimeters or more. Different. Further, the shapes and diameters of the plurality of gas guiding devices 40a are not limited thereby.

FIG. 7 is a top view of the crucible of the third embodiment of the present invention.

As shown in FIG. 7, the third embodiment of the present invention is different from the above embodiment in that the shape of the plurality of gas guiding devices 40b of the crucible 1b is a sheet shape and arranged in a concentric ring shape. Further, the shape and arrangement of the plurality of gas guiding devices 40b are not limited thereby.

FIG. 8 is a top view of the crucible of the fourth embodiment of the present invention.

As shown in FIG. 8, the fourth embodiment of the present invention is different from the above embodiment in that the shape of the plurality of gas guiding devices 40c of the crucible 1c is a sheet and is arranged in a spiral. Further, the shape and arrangement of the plurality of gas guiding devices 40c are not limited thereby.

As such, the present invention is more progressive and more practical, and claims are filed according to law.

The above are merely preferred embodiments of the present invention, and the present invention is not limited thereby, and equivalent modifications made based on the scope of the claims and the description of the invention related to the present invention. All modifications and variations are within the scope of the claims.

1, 1a, 1b, 1c crucible
10 Growth room
20 Cage
30 Reflector
40, 40a, 40b, 40c
90 seed crystals
91 Source of material
A Installation angle
L heat radiation

Claims (20)

It is a crucible for crystal growth on seed crystal, source of material,
A growth chamber containing the source of the material,
A holder that is located above the growth chamber and fixes the seed crystal;
A reflector located around the cage;
A crucible characterized in that it contains a plurality of gas guiding devices for guiding the source of vaporized material located below the growth chamber. The crucible according to claim 1, wherein an installation angle of the reflection device is adjusted within a range of 0 degrees to 30 degrees. The crucible according to claim 2, wherein the plurality of gas guiding devices are arranged at equal distances outward from the centers of the plurality of gas guiding devices. The height of the gas guiding device near the center of the plurality of gas guiding devices is higher than the height of the gas guiding device near the outside of the plurality of gas guiding devices. The crucible according to claim 3. The crucible according to claim 4, wherein the plurality of gas guiding devices are higher in height than the source of the material. The crucible according to claim 5, wherein the plurality of gas guiding devices have a needle shape, and the plurality of gas guiding devices have a substantial diameter of 2 millimeters or less. The crucible according to claim 5, wherein the plurality of gas guiding devices have a rod shape and a substantial diameter of 2 millimeters or more. The crucible according to claim 5, wherein the plurality of gas guiding devices have a sheet shape. The crucible according to claim 8, wherein the plurality of gas guiding devices are arranged in a concentric ring shape or a spiral shape. The reflecting device is made of high-temperature metal carbide or the same material as the growth chamber or the source of the material, and the high-temperature metal carbide or the component of the material contains oxide, carbide, nitride, or fluoride. The crucible according to any one of claims 6 to 9, wherein The plurality of gas guiding devices are made of the same material as the high-temperature metal carbide, the growth chamber, or the source of the material, and the high-temperature metal carbide or the component of the material includes oxide, carbide, nitride, or fluoride. The crucible according to claim 10, wherein: The crucible according to claim 11, wherein the reflecting device and the plurality of gas guiding devices can withstand a temperature of 1500 ° C to 3000 ° C. A reflection device for reflecting a plurality of heat radiation inside a crucible, wherein the reflection device is located around the retainer of the crucible having a retainer. 14. The reflection device according to claim 13, wherein the installation angle is adjusted within a range of 0 degrees to 30 degrees. It consists of the same material as the source of the high temperature metal carbide, the growth chamber or the material, and the high temperature metal carbide or the component of the material contains an oxide, carbide, nitride or fluoride, and has a temperature of 1500 ° C. to 3000 ° C. The reflection device according to claim 14, which withstands a temperature. A plurality of gas guiding devices for guiding a vaporized source of material located in a growth chamber of a crucible located below the growth chamber. The plurality of gas guiding devices according to claim 16, wherein a height of an object arranged at an equal distance from the center and close to the center is higher than that of an object located outside. The plurality of gas guiding devices according to claim 17, wherein the height is higher than the source of the material. Needle-like, rod-like or sheet-like, if needle-like, the actual diameter is 2 mm or less, if rod-like, the actual diameter is 2 mm or more, if sheet-like, concentric ring-like or spiral-like The plurality of gas guiding devices according to claim 18, wherein the gas guiding devices are arranged in an array. The high-temperature metal carbide is composed of the same material as the source of the growth chamber and the material, and the high-temperature metal carbide and the material include oxides, carbides, nitrides, or fluorides. 20. The plurality of gas guiding devices according to claim 19, which withstand a temperature of