TWI461578B - Crucible - Google Patents

Description

crucible

The present invention relates to a crucible, particularly a crucible that densifies the thermal radiation temperature gradient gap of the crystal growth.

Physical Vapor Transport (PVT) and Physical Vapor Deposition (PVD) are used as the technology for growing strontium carbide, which is also used as a technology for mass production of wafers. For example, a method of growing ruthenium carbide crystals disclosed in U.S. Patent No. 5,746,827 uses a physical vapor phase transfer (PVT) method to grow large-sized crystals. However, the disadvantages are that the thermal gradient gap is too large, the shielding gas pressure is too low, the seed crystal temperature and the sublimation gas pressure are unstable, the process stability is insufficient, and the crystal yield is poor, resulting in micro tubes (thermal decomposition pores) or more. Crystals fail.

A method of growing high quality tantalum carbide crystals by thermal radiation as disclosed in U.S. Patent No. 7,316,747. However, this method has the disadvantage of uneven thermal field, which causes the decomposition rate of the powder source to be different, which makes the gas concentration in the growth chamber unstable, thereby changing the partial pressure of the growth chamber, making the control of a single multi-type more difficult.

A method of controlling and enhancing the growth of high quality tantalum crystal single crystals disclosed in U.S. Patent No. 6,824,611. However, in this method, the most difficult aspect of the growth of niobium carbide is the nature of the reaction of niobium at high temperatures, which is made with graphite during the sublimation process. The wall reacts, which is difficult to control and will generate too much carbon or helium to change the gas composition during the sublimation process. In addition, helium atoms attack the walls of the container made of graphite to produce carbon dust and become impurities in the crystal, which affects the purity of the crystal.

Therefore, it is necessary to provide a new apparatus for crystal growth which can stabilize the thermal radiation temperature gradient gap of the crystal growth and stabilize the gas flow in the growth chamber to produce high quality silicon carbide crystals.

SUMMARY OF THE INVENTION The primary object of the present invention is to provide a crucible for densifying the thermal radiation temperature gradient of the crystal growth.

To achieve the above objects, the present invention is used to grow a seed crystal by a source of material comprising a growth chamber, a holder, a reflecting means, and a plurality of gas guiding means. The holder is located above the growth chamber to hold the seed crystal. The reflecting device is located around the holder. A plurality of gas guides are located below the growth chamber to accommodate the source of material and direct the source of vaporized material.

In the first embodiment of the invention, the plurality of gas guiding means are in the shape of a needle.

In a second embodiment of the invention, the plurality of gas guiding means are in the shape of a rod.

In a third embodiment of the invention, the plurality of gas guiding means are in the form of a sheet which is arranged in a concentric circle.

In the fourth embodiment of the present invention, the plurality of gas guiding means are in the form of a sheet which is arranged in a spiral shape.

1,1a,1b,1c‧‧‧坩埚

10‧‧‧ Growth room

20‧‧‧Retainer

30‧‧‧Reflecting device

40, 40a, 40b, 40c‧‧‧ gas guiding device

90‧‧‧ seed crystal

91‧‧‧Material source

A‧‧‧Set angle

L‧‧‧thermal radiation

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic illustration of a first embodiment of the present invention.

Figure 2 is a schematic illustration of a first embodiment of the present invention.

Figure 3 is a schematic illustration of a top view of a reflective device having an angle set adjusted in accordance with a first embodiment of the present invention.

Figure 4 is a partial schematic view of a side of a reflecting device having an adjusted angle according to a first embodiment of the present invention.

Figure 5 is a plan view of a crucible in accordance with a first embodiment of the present invention.

Figure 6 is a plan view of a crucible in accordance with a second embodiment of the present invention.

Figure 7 is a plan view of a crucible in accordance with a third embodiment of the present invention.

Figure 8 is a plan view of a crucible in accordance with a fourth embodiment of the present invention.

The above and other objects, features and advantages of the present invention will become more <

Hereinafter, please refer to FIG. 1 to FIG. 4 together with respect to the first embodiment according to the present invention. 1 is a schematic view of a first embodiment of the present invention; FIG. 2 is a schematic view of a first embodiment of the present invention; and FIG. 3 is an adjusted angle of arrangement according to the first embodiment of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 4 is a partial schematic view showing a state in which a set angle of reflection means has been adjusted in accordance with a first embodiment of the present invention.

As shown in FIGS. 1 to 4, in the first embodiment of the present invention, 坩埚1 is used to make a crystal The seed crystal 90 is grown by a physical Vapor Transport (PVT) or a Physical Vapor Deposition (PVD) by a material source 91. However, the crystal growth method is not limited to the above. The crucible 1 includes a growth chamber 10, a holder 20, a reflecting device 30, and a plurality of gas guiding devices 40.

The growth chamber 10 is for accommodating the material source 91 and for crystallizing the seed crystal 90. The growth chamber 10 is resistant to high temperatures and can transfer external heat energy to the inside of the growth chamber 10 so that the interior can be grown by high temperature. The holder 20 is located above the growth chamber 10 for holding the seed crystal 90. The reflecting device 30 is located around the holder 20, and a set angle A of the reflecting device 30 can be adjusted to any angle within a range of 0 to 30 degrees (as shown in FIG. 4). The reflecting means 30 is made of a high temperature metal carbide or a material homogenous to the growth chamber 10 or the material source 91, and the reflecting means 30 can withstand a temperature of 1500 ° C to 3000 ° C. The reflecting means 30 is for reflecting the internal thermal radiation L (shown in Figure 2) to the plurality of gas guiding means 40. Through different setting angles A, the reflecting device 30 can adjust the reflection angle of the thermal radiation L to modulate the thermal field and reduce the temperature distribution of the temperature gradient influencing region to reduce the occurrence of microtubules. However, the angle range in which the angle A is set is not limited to 0 to 30 degrees, and may be a larger angle range, and the temperature that the reflecting device 30 can withstand is not limited to the above.

Please refer to FIG. 5. FIG. 5 is a plan view of a crucible according to a first embodiment of the present invention.

As shown in FIG. 5, the plurality of gas guiding devices 40 are located below the growth chamber 10, and the plurality of gas guiding devices 40 are arranged equidistantly outward from the center of the plurality of gas guiding devices 40; wherein the height of the gas guiding device 40 near the center is Higher than the height of the gas guide 40 near the periphery. The plurality of gas guiding devices 40 are made of a high temperature metal carbide or a material homogenous to the growth chamber 10 or the material source 91. The height of the plurality of gas guiding devices 40 is higher than the height of the material source 91 accommodated in the growth chamber 10. When growing room 10 When the contained material source 91 is heated to be in a gaseous state, the plurality of gas guiding devices 40 will direct the vaporized material source 91 to rise, causing the vaporized material source 91 to contact the seed crystal 90 to grow crystals, and rise in the vaporized material source 91. Thereafter, the material source 91 that has not been vaporized can be in a gaseous state to replenish the space of the ascending vaporized material source 91, so that the material source 91 below the growth chamber 10 can continue to form a gaseous state and rise. In the first embodiment, the plurality of gas guiding means 40 has a needle shape and a diameter of substantially 2 mm or less. However, the shape and diameter of the plurality of gas guiding devices 40 are not limited thereto.

In the present invention, the high temperature metal carbide of the reflecting means 30 and the plurality of gas guiding means 40, or the composition of the material homogenous to the growth chamber 10 or the material source 91, includes oxides, carbides, nitrides or fluorides. The invention is not limited thereto.

Please refer to FIG. 6. FIG. 6 is a plan view of a crucible according to a second embodiment of the present invention.

As shown in Fig. 6, the second embodiment of the present invention differs from the first embodiment in that, in the second embodiment, the plurality of gas guiding devices 40a of the crucible 1a are rod-shaped and have a diameter of substantially 2 mm. the above. However, the shape and diameter of the plurality of gas guiding devices 40a are not limited thereto.

Please refer to FIG. 7. FIG. 7 is a plan view of a crucible according to a third embodiment of the present invention.

As shown in Fig. 7, the third embodiment of the present invention differs from the above embodiment in that, in the third embodiment, the plurality of gas guiding devices 40b of the crucible 1b are in the form of a sheet which is concentrically shaped. Arranged in a way. However, the shape and arrangement of the plurality of gas guiding devices 40b are not limited thereto.

Please refer to FIG. 8. FIG. 8 is a plan view of a crucible according to a fourth embodiment of the present invention.

As shown in Fig. 8, the fourth embodiment of the present invention differs from the above embodiment in that, in the fourth embodiment, the shape of the plurality of gas guiding devices 40c of the crucible 1c is in the form of a sheet which is in a spiral manner. arrangement. However, the shape and arrangement of the plurality of gas guiding devices 40c are not limited thereto.

To sum up, the present invention, regardless of its purpose, means and efficacy, shows its distinctiveness in the characteristics of the prior art. You are requested to review the examination and express the patent as soon as possible. It should be noted that the various embodiments described above are merely illustrative for ease of explanation, and the scope of the invention is intended to be limited by the scope of the claims.

1‧‧‧坩埚

10‧‧‧ Growth room

20‧‧‧Retainer

30‧‧‧Reflecting device

40‧‧‧ gas guiding device

90‧‧‧ seed crystal

91‧‧‧Material source

Claims (13)

a crucible for causing a seed crystal to be grown by a material source, the crucible comprising: a growth chamber for containing the material source; and a holder located above the growth chamber for fixing the seed crystal a reflecting device located around the holder, the reflecting device being made of a high temperature metal carbide or a material homogenous to the growth chamber or the material source, the high temperature metal carbide or the composition of the material Including oxides, carbides, nitrides or fluorides; and a plurality of gas guiding means located below the growth chamber for directing the source of gasification. As described in claim 1, the setting angle of the reflecting device can be adjusted to an angle in the range of 0 to 30 degrees. As described in claim 1, the plurality of gas guiding devices are arranged in an equidistant manner from the center of the plurality of gas guiding devices. As described in claim 3, wherein the height of the gas guiding device near the center of the plurality of gas guiding devices is higher than the height of the gas guiding device near the periphery of the plurality of gas guiding devices. The invention of claim 1, wherein the plurality of gas guiding devices have a height higher than the material source. The enthalpy of the first aspect of the invention, wherein the plurality of gas guiding devices are in the shape of a needle, and the plurality of gas guiding devices have a diameter of substantially 2 mm or less. As claimed in claim 1, wherein the plurality of gas guiding devices The shape is a rod shape, and the diameter of the plurality of gas guiding devices is substantially 2 mm or more. The enthalpy of claim 1, wherein the plurality of gas guiding devices are in the form of a sheet. As described in claim 8, wherein the plurality of gas guiding devices are arranged in a concentric ring or a spiral. The invention as claimed in claim 1, wherein the plurality of gas guiding devices are made of the high temperature metal carbide or a material homogenous to the growth chamber or the material source, the high temperature metal carbide or the The composition of the material includes oxides, carbides, nitrides or fluorides. The invention described in claim 1, wherein the reflecting device and the plurality of gas guiding devices can withstand a temperature of 1500 ° C to 3000 ° C. A reflecting device for reflecting a plurality of internal heat radiation of a crucible, the crucible comprising a holder, the reflecting device being located around the holder, wherein the reflecting device is made of a high temperature metal carbide, The high temperature metal carbide or a component of the material includes an oxide, a carbide, a nitride or a fluoride, and the reflecting device can withstand a temperature of 1500 ° C to 3000 ° C. A reflecting device according to claim 12, wherein a setting angle of the reflecting device is adjustable to an angle in the range of 0 to 30 degrees.