JP2013214783A - Semiconductor device and manufacturing method of member for electrode - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the heat cycle tolerance and the power cycle tolerance of a power module.SOLUTION: An member 30 for an electrode, where copper posts 32 are formed in multiple through holes 31a provided in a supporting body 31 of a ceramic material, is joined to a surface of an IGBT 10, where an emitter electrode is formed, by solder. Joining the multiple copper posts 32 to the electrode by the solder causes heat generated in the IGBT 10 to transfer to the member 30 for the electrode to be radiated therefrom and reduces stress applied to a solder junction interface thereby suppressing the strain and reducing the occurence of cracks even if there is a thermal expansion coefficient difference between a component material of the IGBT 10 and copper. Thus, the structure improves the heat cycle tolerance and the power cycle tolerance of a power module.

Description

  The present invention relates to a method for manufacturing a semiconductor device and an electrode member, and more particularly, to a method for manufacturing a semiconductor device and an electrode member used in a large current / high voltage operating environment.

  In recent years, robots, machine tools, electric vehicles, and the like have come to use power modules that are resistant to high-current / high-voltage operating environments for power converters such as inverters / converters for driving motors. ing. Currently, such power modules are mainly configured using power semiconductor elements such as insulated gate bipolar transistors (IGBTs) and free wheeling diodes (FWDs) (for example, (See Patent Document 1).

FIG. 17 is a schematic cross-sectional view of a main part of a conventional power module.
FIG. 17 shows a mounted state of the IGBT 100 in the power module. The IGBT 100 normally has an emitter electrode and a gate electrode (referred to as “emitter electrode”) formed on one surface side and a collector electrode formed on the opposite surface side. In FIG. 17, it is assumed that the emitter electrode and the like are mounted upward and the collector electrode is mounted downward in the figure. In that case, the emitter electrode and the like on the upper surface side are connected to the corresponding external connection terminals (not shown) by aluminum wires 101 as shown in FIG.

  On the other hand, the lower collector electrode is disposed on an insulating substrate 102 provided on a copper (Cu) heat dissipation base (referred to as “copper base”) (not shown). The insulating substrate 102 is made of, for example, a ceramic plate made of alumina or the like having good heat conductivity, and copper foils 102a and 102b are attached to both surfaces thereof. The upper surface copper foil 102a and the collector electrode, and the lower surface copper foil 102b and the copper base are soldered. With such a structure, the insulation between the IGBT 100 and the heat dissipation system is ensured while ensuring the electrical connection between the IGBT 100 and the outside, and the heat generated during operation is transferred to the insulating substrate 102 and the copper base. It is possible to transfer heat.

  However, in such a conventional mounting form, heat can be radiated from the lower surface side of the IGBT 100 via the insulating substrate 102 or the copper base, but on the upper surface side, for example, a thin aluminum wire having a wire diameter of about 300 μm to 400 μm. 101 is only connected, and there is also heat generation due to the energization of the aluminum wire 101, so that the heat radiation effect from the upper surface side can hardly be expected. In addition, the element characteristics may be impaired by the heat generated by the aluminum wire 101. Although it is conceivable to replace the aluminum wire 101 with a copper wire having a high thermal conductivity, the number of wires matching the current capacity is ultrasonically bonded to the surface of the IGBT 100, so that the aluminum wire 101 is not damaged. It is preferable not to use a copper wire having a higher hardness.

FIG. 18 is a schematic cross-sectional view of an essential part of another conventional power module. In FIG. 18, the same elements as those shown in FIG. 17 are denoted by the same reference numerals, and detailed description thereof is omitted.
In order to avoid the problems caused by using the aluminum wire, the copper electrode 103 is conventionally solder-bonded to the upper surface side where the emitter electrode and the like of the IGBT 100 are formed as shown in FIG. Attempts have been made to secure the electrical connection to the outside by joining the external connection terminals 104 drawn out of the module, and to allow heat dissipation from the upper surface side using the copper electrode 103.

  The same applies when the FWD is mounted in the power module. For example, the anode electrode is on the upper surface side, the cathode electrode is on the lower surface side, and the aluminum wire is ultrasonically bonded on the upper surface side, or the copper electrode is After being soldered, the lower surface side is soldered to a copper foil attached to an insulating substrate on a copper base.

JP 2004-6603 A

  However, when a copper electrode is soldered to the upper surface of the IGBT or FWD instead of the aluminum wire in consideration of heat dissipation as described above, the thermal expansion of silicon (Si), which is the main constituent material of the IGBT or FWD, The coefficient of thermal expansion is about 2.6 ppm / ° C, whereas the coefficient of thermal expansion of copper is as large as about 17 ppm / ° C. Due to the difference in coefficient of thermal expansion, thermal stress is applied to the solder joint interface during heat cycle and power cycle. In some cases, cracks are generated due to the strain generated thereby, and the target life of the power module cannot be satisfied.

  Such a problem of occurrence of cracks at the solder joint interface may also occur on the lower surface side of the IGBT or FWD. That is, in an insulating substrate with a copper foil attached to the alumina surface, the coefficient of thermal expansion is about 7 ppm / ° C., and this is solder-bonded to a copper base having a high coefficient of thermal expansion. In some cases, thermal stress is applied to the solder joint interface, resulting in distortion and cracking. For example, when a heat cycle of −40 ° C. to + 125 ° C. is applied, it is known that cracks begin to occur in about 500 cycles due to strain generated at the solder joint interface between the insulating substrate and the copper base. .

  Copper is used for the heat dissipation base material of the power module because of its good thermal conductivity of about 350 W / (m · K), but in order to avoid such cracking, copper molybdenum is used instead of copper base. A material having a coefficient of thermal expansion close to 7 ppm / ° C. such as (CuMo) composite material or aluminum silicon carbide (AlSiC) is also used. However, although these materials have a smaller coefficient of thermal expansion than copper, their thermal conductivity is as low as about 150 W / (m · K), which is a disadvantageous characteristic for reducing the loss of recent IGBTs and FWDs. In addition, the cost of the heat dissipation base formed using these materials is very high, approximately 20 times that of the copper base.

  The present invention has been made in view of the above points, and efficiently dissipates heat generated in the interior, and suppresses thermal stress applied to a joint interface existing in the interior to be small, and has high reliability. The purpose is to provide.

  Another object of the present invention is to provide a method for manufacturing an electrode member that can efficiently dissipate heat generated inside a semiconductor device and suppress thermal stress applied to a bonding interface existing inside. To do.

  In the present invention, in order to solve the above problem, in a semiconductor device having a semiconductor element having an electrode on its surface, an insulating support made of a ceramic material having a plurality of through holes penetrating between main surfaces; A plurality of metal posts disposed in each of the through holes, and a bonding layer that electrically connects each of the plurality of metal posts and the electrode of the semiconductor element, and is provided on the main surface of the support. A semiconductor device is provided in which a conductor layer connected to a metal post is formed, and the plurality of metal posts are separated from each other via the support.

  In the present invention, in order to solve the above problem, in a semiconductor device having a semiconductor element having an electrode on its surface, an insulating support made of a ceramic material having a plurality of through holes penetrating between main surfaces, and the above-mentioned An electrode member including a metal post disposed in each through hole and bonded to the inner surface of the through hole; and a bonding layer that electrically connects the electrode member and the electrode of the semiconductor element. The semiconductor device is characterized in that the metal post is made of copper and a conductor layer connected to the metal post is formed on the main surface of the support.

  In the present invention, in order to solve the above problem, in a method for manufacturing an electrode member to be bonded to an electrode of a semiconductor device, an insulating support made of a ceramic material having a plurality of through holes penetrating between main surfaces A metal post is inserted into each of the through-holes, and the support and the metal post are integrally formed by bonding and fitting, and a conductor layer is formed on the main surface of the support to be joined to the electrode The manufacturing method of the member for electrodes characterized by doing is provided.

  In the present invention, in order to solve the above problem, in a method for manufacturing an electrode member to be bonded to an electrode of a semiconductor device, an insulating support made of a ceramic material having a plurality of through holes penetrating between main surfaces Forming a copper layer on one of the main surfaces, filling the through hole of each through hole with copper by electrolytic plating using the copper layer as a seed, forming a metal post in each through hole, There is provided a method for producing an electrode member, wherein a conductor layer is formed on a main surface of the support to be joined to an electrode.

  In the present invention, in order to solve the above problem, in a semiconductor device having a semiconductor element having an electrode on its surface, an insulating support made of a ceramic material having a plurality of through holes penetrating between main surfaces; A plurality of metal posts disposed in each of the through holes, and a solder layer that joins each of the plurality of metal posts and the electrode of the semiconductor element, and each of the plurality of metal posts includes the support. The end of the metal post protrudes from at least one main surface of the support, and a coolant is interposed between the metal post protruding from the support and the joint surface. A semiconductor device is provided.

  In the present invention, in order to solve the above problem, in a semiconductor device having a semiconductor element having an electrode on its surface, an insulating support made of a ceramic material having a plurality of through holes penetrating between main surfaces, and the above-mentioned An electrode member comprising a metal post disposed in each through hole and bonded to the inner surface of the through hole; and a solder layer for bonding the electrode member and the electrode of the semiconductor element. The post is made of copper, the end of the metal post protrudes from at least one main surface of the support, and a refrigerant is interposed between the metal post protruding from the support and the joint surface. A semiconductor device is provided.

  In the present invention, in order to solve the above problem, in a method for manufacturing an electrode member to be bonded to an electrode of a semiconductor device, an insulating support made of a ceramic material having a plurality of through holes penetrating between main surfaces A metal post is inserted into each of the through holes, and the support and the metal post are integrally formed by bonding and fitting, and an end of the metal post is formed from at least one main surface of the support. A method for producing an electrode member is provided, characterized in that a coolant is interposed between the metal post projecting from the support and the joining surface.

  In the present invention, in order to solve the above problem, in a method for manufacturing an electrode member to be bonded to an electrode of a semiconductor device, an insulating support made of a ceramic material having a plurality of through holes penetrating between main surfaces Forming a copper layer on one of the main surfaces, filling the through hole of each through hole with copper by electrolytic plating using the copper layer as a seed, forming a metal post in each through hole, An end of a metal post protrudes from at least one main surface of the support, and a coolant is interposed between the metal post protruding from the support and a joining surface, and a method for producing an electrode member Is provided.

  In the present invention, an electrode member in which a plurality of metal posts are formed is joined to an electrode of a semiconductor element. Thereby, the heat generated in the semiconductor element can be efficiently radiated, and the influence of the coefficient of thermal expansion of the material can be suppressed to suppress the distortion at the bonding interface. As a result, generation of cracks at the bonding interface can be greatly reduced, and a highly reliable semiconductor device can be realized.

It is a principal part cross-sectional schematic diagram of the power module of 1st Embodiment. It is a principal part plane schematic diagram of an example of IGBT used for the power module of 1st Embodiment. It is a schematic diagram of the member for electrodes of a 1st embodiment, and (A) is a top view and (B) is an aa sectional view of (A). It is the principal part cross-sectional schematic diagram which showed another example of the power module of 1st Embodiment. It is explanatory drawing of the heat dissipation effect. It is a schematic diagram of the power module using the member for electrodes of a 1st embodiment, (A) is a top view and (B) is a bb sectional view of (A). It is a schematic diagram of the member for electrodes of 2nd Embodiment, Comprising: (A) is a top view, (B) is cc sectional drawing of (A). It is a schematic diagram of the member for electrodes of 3rd Embodiment, Comprising: (A) is a top view, (B) is dd sectional drawing of (A). It is a schematic diagram of the member for electrodes of 4th Embodiment, Comprising: (A) is a top view, (B) is ee sectional drawing of (A). It is a schematic diagram of the member for electrodes of 5th Embodiment, Comprising: (A) is a top view, (B) is ff sectional drawing of (A). It is a figure which shows an example of the element mounting state using the member for electrodes of 5th Embodiment. It is a schematic diagram of the member for electrodes of 6th Embodiment, (A) is a top view, (B) is gg sectional drawing of (A). It is a figure which shows an example of the element mounting state using the member for electrodes of 6th Embodiment. It is a schematic diagram of the member for electrodes of 7th Embodiment, (A) is a top view, (B) is hh sectional drawing of (A). It is a figure which shows an example of the element mounting state using the member for electrodes of 7th Embodiment. It is a schematic diagram of the member for electrodes provided with the cooling mechanism, Comprising: (A) is a top view, (B) is ii sectional drawing of (A). It is a principal part cross-sectional schematic diagram of the conventional power module. It is a principal part cross-sectional schematic diagram of another conventional power module.

Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings, taking as an example a case where the present invention is applied to a power module including an IGBT or FWD.
First, the first embodiment will be described.

  FIG. 1 is a schematic cross-sectional view of a main part of a power module according to the first embodiment, and FIG. 2 is a schematic plan view of the main part of an example of an IGBT used in the power module according to the first embodiment. 3A and 3B are schematic views of the electrode member according to the first embodiment, in which FIG. 3A is a plan view and FIG. 3B is a cross-sectional view along line aa in FIG.

  The IGBT 10 shown in FIG. 2 has an emitter electrode 10a and a gate electrode 10b formed on one surface side, and a collector electrode formed on the other surface side (not shown). For example, in a power module using such an IGBT 10, as shown in FIG. 1, the IGBT 10 has the collector electrode soldered to the insulating substrate 20 side, and the emitter electrode 10 a soldered to the electrode member 30. .

  The insulating substrate 20 is made of ceramics such as alumina having good heat conductivity, and copper foils 21 and 22 constituting a conductor pattern and the like are attached to the surface thereof. Of these copper foils 21 and 22, the copper foil 21 on the upper surface side is soldered to the collector electrode of the IGBT 10, and the copper foil 22 on the lower surface side is a copper base (not shown) as a heat dissipation base provided thereunder. And soldered together. When configuring a power module, such an insulating substrate 20 can obtain a dielectric breakdown voltage of 5000 V or more on the side on which the IGBT 10 is mounted and the copper base side.

  As shown in FIG. 3, the electrode member 30 includes a support 31 in which a plurality of through holes 31a penetrating between main surfaces are formed in a ceramic material such as alumina and cordierite, and the through holes 31a. The copper post 32 is embedded with copper. As shown in FIG. 1, one end of the copper post 32 of the electrode member 30 is soldered to the emitter electrode 10a of the IGBT 10, and the other end is an external connection terminal / copper electrode (hereinafter simply referred to as "copper electrode"). It is referred to as an “electrode”) 40 and soldered.

  By joining the electrode member 30 to the electrode of the IGBT 10, for example, the emitter electrode 10a, the heat generated in the IGBT 10 can be efficiently radiated and generated due to the difference in thermal expansion between the electrode member 30 and the IGBT 10. The strain at the joint interface between the IGBT 10 and the electrode member 30 can be kept small. The reason is as follows.

  The heat generated in the IGBT 10 can be efficiently radiated because the copper (copper post 32) having a high thermal conductivity of the electrode member 30 is joined to the emitter electrode 10a of the IGBT 10. This is because heat dissipation is promoted. Further, the reason why the distortion at the bonding interface can be suppressed is considered as follows. The thermal expansion coefficient of the ceramic is, for example, about 7 to 8 ppm / ° C. for alumina, and particularly about 0.5 to 3 ppm / ° C. for cordierite. Therefore, the thermal expansion coefficient of the ceramic constituting the support 31 constitutes the copper post 32. This is smaller than the thermal expansion coefficient of copper (about 16.5 to 18 ppm / ° C.). For this reason, when the electrode member 30 is thermally expanded by the heat generated from the IGBT 10, the support 31 restrains the thermal expansion of the copper post 32, so that the thermal expansion of the electrode member 30 is suppressed. As a result, the IGBT 10 and the electrode This is because the difference in thermal expansion between them can be reduced at the joint surface of the working member 30.

  Such an electrode member 30 is formed as follows, for example. As a first method, first, a ceramic powder is press-molded to form a molded body having a predetermined number of through holes 31a at predetermined positions, and the molded body is fired at a high temperature to form the support body 31. Next, the support 31 is impregnated with molten copper to infiltrate the copper into the through hole 31a. Thereafter, the copper is solidified, and the copper remaining on the surface is removed by polishing or the like as necessary, and the copper post 32 is removed. The electrode member 30 having the structure is formed. As a second method, a support body 31 having a through hole 31a is formed in the same manner, a metal post made of copper that can be inserted into the through hole 31a is prepared, and the metal post is formed in the through hole 31a of the support body 31. The electrode member 30 having the copper post 32 is formed by inserting and integrally forming the support 31 and the metal post by bonding, fitting or the like.

  By providing such an electrode member 30 between the IGBT 10 and the copper electrode 40, the IGBT 10 and the copper electrode 40 are connected in heat transfer, and a plurality of copper posts 32 and each member (emitter electrode 10a, copper electrode). 40) and a solder layer (not shown) at the joint interface.

  And, when the electrode member 30 formed with a plurality of copper posts 32 and the IGBT 10 are joined in this way, the thermal expansion is greater than the case where the copper electrode 40 and the IGBT 10 in which copper is exposed on the entire surface are joined. Since the joint areas of the different rates are reduced, the thermal stress applied to the solder layer at the joint interface due to the difference in thermal expansion coefficient when heat is generated is reduced. Furthermore, the solder layer at the joint interface between the IGBT 10 and the electrode member 30 serves to connect both of them electrically and thermally and to alleviate such thermal stress. Moreover, since this electrode member 30 functions as a heat sink together with the copper electrode 40, heat can be efficiently radiated from the upper surface side of the IGBT 10. As a result, distortion hardly occurs at the solder joint interface, and the heat cycle resistance and power cycle resistance can be improved.

  In this way, by soldering the electrode member 30 between the IGBT 10 and the copper electrode 40, the distortion at the solder joint interface between the IGBT 10 and the electrode member 30 can be reduced, and the heat generated in the IGBT 10 can be reduced. Can be efficiently dissipated. As a result, the occurrence of cracks at the solder joint interface is greatly suppressed.

FIG. 4 is a schematic cross-sectional view of the relevant part showing another example of the power module according to the first embodiment.
In the first embodiment, the copper electrode 40 is joined to the electrode member 30. The copper electrode 40 is configured as an external connection terminal as shown in FIG. 4, it may be configured as a connection conductor to another copper foil 21 on the insulating substrate 20.

  The gate electrode 10b of the IGBT 10 is wired by wire bonding or the like, but is not shown here. In the example of FIGS. 1 to 4, the electrode member 30 is approximately the size of the emitter electrode 10 a, but the gate electrode 10 b may be soldered at the same time as the size equivalent to the chip size of the IGBT 10. At this time, the copper post 32 connected to the gate electrode 10b may be used as a connection portion of the gate electrode 10b, and the copper post 32 may be wired by wire bonding, the copper electrode 40, or the like.

FIG. 5 is an explanatory view of the heat dissipation effect.
FIG. 5 shows the temperature distribution when the DC50A is normally energized when the emitter electrode 10a of the IGBT 10 is externally connected by wire bonding and when it is externally connected by the lead frame structure using the electrode member 30 and the copper electrode 40. Is shown. In FIG. 5, the horizontal axis represents the distance (mm) in the power module depth direction (the direction from the IGBT 10 toward the insulating substrate 20) from the temperature measurement reference point in each case, and the vertical axis represents the temperature (° C.). ing. T _WB is a temperature in the case of wire bonding, T _LF is a temperature in the case of a lead frame structure, and T _j is a bonding temperature of the wire or electrode member 30 to the IGBT 10.

From FIG. 5, in the case of wire bonding, the maximum value of T _WB is 210.0 ° C. while T _j is 177.5 ° C. with the wire surface as the reference point (0 mm) for temperature measurement. _Exceeds the value of Tj. Furthermore, the temperature once rises from the reference point in the depth direction of the power module, and then the temperature decreases as it becomes deeper. It can be seen that heat radiation from the inside is not performed well. It is also suggested that the wire itself has become a heat supply.

On the other hand, in the case of the lead frame structure, the surface of the copper electrode 40 portion closest to the electrode member 30 is the temperature measurement reference point (0 mm), while T _j is 155.0 ° C., whereas T _LF The maximum value is 152.4 ° C., and any depth including the region of the electrode member 30 does not exceed the value of T _j . Furthermore, it is possible to achieve a significant temperature decrease as a whole as compared with the case of wire bonding, and it can be said that the electrode member 30 and the copper electrode 40 function as a heat conductor having good heat generated inside. .

  In the above description, the IGBT 10 has been described as an example. In the case of FWD, for example, the cathode electrode is soldered to the copper foil 21 on the surface of the insulating substrate 20 and the anode electrode is soldered to the electrode member 30. The same configuration as above can be obtained, and the same effect as described above can be obtained.

  Here, the electrode member 30 is provided only on the emitter electrode 10a or the anode electrode on the upper surface side. However, such an electrode member 30 is provided on the surface of the collector or cathode electrode on the lower surface side and the surface of the insulating substrate 20. It may be provided between the copper foil 21 or between the copper foil 22 on the lower surface of the insulating substrate 20 and the copper base.

6A and 6B are schematic views of a power module using the electrode member according to the first embodiment, in which FIG. 6A is a plan view and FIG. 6B is a cross-sectional view taken along line bb in FIG.
In the power module shown in FIG. 6, the IGBT 10 and the copper electrode 40 and the FWD 50 and the copper electrode 40 are connected by the electrode member 30 as described above, and the IGBT 10, the FWD 50, the copper electrodes 40, 41, and 42 are connected. And the copper foil 21 and the copper foil 22 and the copper base 60 are also connected by the electrode member 30. With such a configuration, the same effect as described above can be obtained. That is, the heat generated in the IGBT 10 and the FWD 50 can be efficiently transferred also to the copper base 60 side, and the thermal stress applied to each solder joint interface as compared with the case of joining without the electrode member 30. Can be relaxed to reduce the strain and suppress the occurrence of cracks.

Next, a second embodiment will be described.
7A and 7B are schematic views of the electrode member according to the second embodiment, in which FIG. 7A is a plan view and FIG. 7B is a cc cross-sectional view of FIG. In FIG. 7, the same elements as those shown in FIG. 3 are denoted by the same reference numerals, and detailed description thereof is omitted.

  As shown in FIG. 7, the electrode member 30 a of the second embodiment is the same as that of the first embodiment in that a copper layer 33 that is a conductor layer is formed on one surface of a support 31. It is different from the electrode member 30.

  In such an electrode member 30a, for example, a copper layer 33 is formed on one surface of a support 31 in which a through hole 31a is formed, and then the inside of the through hole 31a is formed by electrolytic plating using the copper layer 33 as a seed. It can be formed by filling with. The seed copper layer 33 can be formed, for example, by attaching a copper foil to one surface of the support 31 or performing electroless plating. Alternatively, the electrode member 30a has a surface on which the copper layer 33 is left after the support 31 is impregnated with molten copper, for example, in the same manner as the formation of the electrode member 30 of the first embodiment. Copper may be removed by polishing or the like until the support 31 is exposed only on the other opposite surface.

  By using the electrode member 30a of the second embodiment for a power module, an insulating substrate is provided between an element such as IGBT and FWD and a copper electrode or a copper foil on the surface of the insulating substrate, as in the first embodiment. It is possible to electrically and thermally transfer between the copper foil on the surface and the copper base, and it is possible to reduce the distortion at the solder joint interface of each member and suppress the occurrence of cracks. In addition, such an electrode member 30a is, for example, arranged with the copper layer 33 facing the copper electrode side between the IGBT or FWD and the copper electrode, or between the IGBT or FWD and the insulating substrate. The same effect as that of the first embodiment can be obtained by arranging the electrodes toward the insulating substrate side, and the electrical connection in the planar direction of the electrode member 30a can be ensured by the copper layer 33. Is possible. As described above, the electrode member 30a according to the second embodiment is suitable for a place where conduction in the horizontal direction is required in addition to conduction in the vertical direction.

Next, a third embodiment will be described.
8A and 8B are schematic views of the electrode member according to the third embodiment, in which FIG. 8A is a plan view and FIG. 8B is a dd cross-sectional view of FIG. In FIG. 8, the same elements as those shown in FIG. 3 are denoted by the same reference numerals, and detailed description thereof is omitted.

As shown in FIG. 8, the electrode member 30 b according to the third embodiment is such that the ends of the copper posts 32 protrude from both surfaces of the support 31. Is different.
Such an electrode member 30b is formed, for example, by forming a copper post 32 in a through hole 31a formed in a ceramic support 31 and then etching the support 31 from the surface using a chemical etching technique. Can be formed. As an etchant used for such chemical etching, for example, hydrofluoric acid capable of selectively etching ceramics with respect to metal can be used.

  By using the electrode member 30b of the third embodiment for a power module, as in the first embodiment, it is possible to electrically and thermally transfer the members provided across the member. In addition, it becomes possible to reduce the strain at the solder joint interface of each member and suppress the occurrence of cracks. Furthermore, since the solder layer that can relieve the thermal stress applied during the heat generation of the element can be made as thick as the end of the copper post 32 protrudes from the support 31, the occurrence of cracks at the solder joint interface Can be further suppressed.

  Here, the end of the copper post 32 protrudes on both sides of the electrode member 30b. However, the end of the copper post 32 protrudes only on either side. is there.

Next, a fourth embodiment will be described.
9A and 9B are schematic views of the electrode member according to the fourth embodiment, in which FIG. 9A is a plan view and FIG. 9B is an ee cross-sectional view of FIG. In FIG. 9, the same elements as those shown in FIG. 3 are denoted by the same reference numerals, and detailed description thereof is omitted.

  As shown in FIG. 9, in the electrode member 30c of the fourth embodiment, the ends of the copper posts 32 protrude from the support 31 on both sides, and further, between the copper posts 32 on both sides. Is different from the electrode member 30 of the first embodiment in that it is insulated inside.

  Such an electrode member 30c is formed as follows, for example. First, after forming the copper post 32 in the through hole 31a of the support 31, the support 31 is selectively etched from one surface side using hydrofluoric acid or the like, and the end of the copper post 32 is formed on the one surface. Project the part. And two things which made the edge part of the copper post 32 protrude only on one surface of the support body 31 in this way are prepared, and an insulating plate is provided between the other surfaces where the edge part of those copper posts 32 does not protrude Adhesion or the like with 34 being sandwiched. Thereby, the electrode member 30c shown in FIG. 9 can be formed.

  Or the hole which does not mutually penetrate from both the main surfaces of the support body 31 is formed, and the copper post 32 is formed in this hole. By forming the electrode member 30c in this manner, the electrode member 30c in which the copper post 32 is insulated by the single support 31 can be integrally formed, and the insulating plate 34 is interposed as described above. Eliminates the need for bonding. As shown in FIG. 9, when the end of the copper post 32 protrudes from the support 31, the copper post 32 is formed on the support 31 and then selectively etched using hydrofluoric acid or the like. do it.

  In the electrode member 30c of the fourth embodiment, since the copper post 32 is insulated inside the electrode member 30c, elements such as IGBT and FWD are arranged on one main surface, and heat is radiated on the other main surface. If a copper base as a base is joined, it can be used as an insulating substrate for insulating the element mounting side and the copper base side. In addition, since the solder layer can be thickened by joining the plurality of copper posts 32 and the end of the copper posts 32 projecting from the support 31, the distortion at the solder joint interface of each member can be reduced. It is possible to suppress the occurrence of cracks.

  Here, the end of the copper post 32 protrudes on both sides of the electrode member 30c. However, the end of the copper post 32 protrudes only on either side. is there. Further, although the solder layer is thinned, it is possible to adopt a configuration in which the end portion of the copper post 32 does not protrude on either side.

Next, a fifth embodiment will be described.
10A and 10B are schematic views of the electrode member according to the fifth embodiment, in which FIG. 10A is a plan view and FIG. 10B is an ff cross-sectional view of FIG. In FIG. 10, the same elements as those shown in FIG. 3 are denoted by the same reference numerals, and detailed description thereof is omitted.

  In the electrode member 30d of the fifth embodiment, as shown in FIG. 10, the end of the copper post 32 protrudes on both surfaces of the support 31, and the copper post 32 is at the center. For the electrode of the first embodiment, the cross-sectional area (diameter) is large, the cross-sectional area is gradually reduced toward the edge, and the number of the edges is closer to the edge. It is different from the member 30.

  Such an electrode member 30d is formed as follows, for example. First, a through hole 31a is formed in the support 31 so that the diameter is large at the center, the diameter is small and the number becomes dense toward the edge, and the copper post 32 is formed in the through hole 31a. . Then, the support 31 is selectively etched from the surface using a chemical etching technique. Thereby, the electrode member 30d shown in FIG. 10 can be formed.

FIG. 11 is a diagram illustrating an example of an element mounting state using the electrode member according to the fifth embodiment.
Usually, the thermal stress applied to the solder joint interface between members is larger at the edge than at the center. Therefore, as in the electrode member 30d of the fifth embodiment, the copper post 32 having a large cross-sectional area is formed at the central portion where the thermal stress is small, and the copper post having a small cross-sectional area is formed at the edge portion where the thermal stress is large. If many members 32 are formed, even when the member 70 is solder-bonded thereto, the solder layer (not shown) can be thickened by the protrusion of the copper post 32 in combination with the effect. It is possible to suppress the occurrence of cracks at the solder joint interface.

  The electrode member 30d may be configured such that the end of the copper post 32 protrudes only on one of the surfaces. It is also possible to adopt a configuration in which the end of the copper post 32 does not protrude on either side.

Next, a sixth embodiment will be described.
12A and 12B are schematic views of the electrode member according to the sixth embodiment, in which FIG. 12A is a plan view and FIG. 12B is a gg cross-sectional view of FIG. In FIG. 12, the same elements as those shown in FIGS. 3 and 9 are denoted by the same reference numerals, and detailed description thereof is omitted.

  As shown in FIG. 12, the electrode member 30 e of the sixth embodiment has a copper post 32 formed so as to protrude from the support 31 on one surface side and the other surface side of the insulating plate 34. It differs from the electrode member 30c of the fourth embodiment in that the copper layers 35a and 35b provided on the surface are electrically connected in the plane direction of the insulating plate 34, respectively.

  For example, two electrode members 30e having two copper posts 32 projecting from only one surface of the support 31 are prepared in the same manner as in the fourth embodiment. The insulating plate 34 having the copper layers 35a and 35b formed on the surface is sandwiched between the other surfaces where the end portions of the copper posts 32 do not protrude.

  FIG. 13 is a diagram illustrating an example of an element mounting state using the electrode member according to the sixth embodiment. In FIG. 13, the same elements as those shown in FIG. 6 are denoted by the same reference numerals, and detailed description thereof is omitted.

  Thus, in the electrode member 30e of the sixth embodiment, the copper layers 35a and 35b are electrically connected between the copper posts 32 existing on one surface side and between the copper posts 32 existing on the other surface side, respectively. It is connected. Therefore, the IGBT 10 and the FWD 50 can be directly soldered to this to ensure electrical connection on the element mounting side, and can be used as it is as an insulating substrate for insulating the element mounting side and the heat dissipation base side. Thereby, while ensuring electrical connection in the planar direction on each surface side of the electrode member 30e, the members that are solder-bonded across this are thermally connected, and the solder-bonding interface of each member It is possible to reduce the strain and suppress the occurrence of cracks.

  Here, the end of the copper post 32 protrudes on both sides of the electrode member 30e. However, the copper post 32 may protrude only on either side. It is also possible to adopt a configuration in which the end of the copper post 32 does not protrude on either side. Furthermore, although it was set as the structure which forms the copper layers 35a and 35b on both surfaces of the insulating board 34 here, it is also possible to set it as the structure which forms the copper layer 35a or the copper layer 35b only in any one surface.

Next, a seventh embodiment will be described.
14A and 14B are schematic views of the electrode member according to the seventh embodiment, in which FIG. 14A is a plan view and FIG. 14B is a cross-sectional view taken along line hh of FIG. In FIG. 14, the same elements as those shown in FIGS. 3 and 9 are denoted by the same reference numerals, and detailed description thereof is omitted.

  As shown in FIG. 14, in the electrode member 30f of the seventh embodiment, the end of the copper post 32 protrudes from the support 31 on one surface side, and the copper post from the support 31 on the other surface side. 32 is different from the electrode member 30c of the fourth embodiment in that the end portions of 32 are not projected and are electrically connected by the copper layer 36 in the plane direction of the insulating plate 34.

  Such an electrode member 30f is formed as follows, for example. First, the copper post 32 is formed in the through hole 31 a of the support 31. In that case, as described in the second embodiment, for example, after forming the through hole 31a, a copper layer is attached to one surface side of the support 31 by performing electroless plating. 36 is used as a seed, and the copper post 32 is formed by filling the inside of the through hole 31a with copper by electrolytic plating. Alternatively, a method of impregnating the support 31 with molten copper may be used. And what prepared the copper layer 36 in one side of the support body 31, and what made the edge part of the copper post 32 protrude only in one surface, and the edge part of those copper posts 32 protruded. An insulating plate 34 is sandwiched between the surfaces that are not. Thereby, the electrode member 30f shown in FIG. 14 can be formed.

  FIG. 15 is a diagram illustrating an example of an element mounting state using the electrode member according to the seventh embodiment. In FIG. 15, the same elements as those shown in FIG. 6 are denoted by the same reference numerals, and detailed description thereof is omitted.

  The electrode member 30f according to the seventh embodiment is provided between the IGBT 10 and the FWD 50 and the copper base 60 to ensure electrical connection on the element mounting side and to insulate the element mounting side from the heat dissipation base side. It can be used as it is as an insulating substrate. The copper layer 36 may be formed as a circuit pattern.

Further, when the copper post 32 is protruded like the electrode member 30f, it is possible to provide a cooling mechanism for passing a refrigerant between the copper post 32 and the copper post 60.
16A and 16B are schematic views of an electrode member provided with a cooling mechanism, in which FIG. 16A is a plan view and FIG. 16B is a cross-sectional view taken along line ii of FIG. In FIG. 16, the same elements as those shown in FIGS. 3, 6, and 9 are denoted by the same reference numerals, and detailed description thereof is omitted.

  For example, when the electrode member 30f of the seventh embodiment is used in a power module, as shown in FIG. 16, in the space remaining in the protruding portion of the copper post 32 between the electrode member 30f and the copper base 60 A cooling mechanism for removing heat through the refrigerant 80 is provided. The cooling mechanism is configured to use, for example, water or the like as the refrigerant 80, such that the refrigerant 80 is introduced from the outside of the power module and discharged again through the protruding portion of the copper post 32. Can do. As a result, the heat in the power module can be directly removed by using the refrigerant 80, so that heat can be radiated more effectively, and the distortion at the solder joint interface can be reduced to suppress the occurrence of cracks. It becomes possible.

  Although the case where the electrode member 30f of the seventh embodiment is used for a power module is described as an example here, the cooling mechanism described above has a structure in which the end of the copper post 32 protrudes on one surface side. The same can be applied to the case where the electrode members 30b, 30c, 30d, and 30e are used in a power module.

  As described above, according to the electrode members 30 and 30a to 30f, a cooling mechanism can be applied as necessary, and the thermal stress at the solder joint interface can be relaxed while efficiently radiating heat, and distortion is generated. It is possible to improve heat cycle resistance and power cycle resistance by suppressing. Furthermore, by providing the electrode members 30, 30a to 30f on the emitter electrode side, the surface area and volume of the conductive portion can be increased as compared with the case of aluminum wire bonding, and the heat dissipation effect is enhanced and the electric resistance is reduced. Can be small. As a result, it is possible to suppress heat generation and deterioration of element characteristics. Further, the electrode members 30 and 30a to 30f may be thickened on the support 31 as necessary, and for example, can be replaced with a conventional copper base.

  In the above description, the case where solder is used for bonding between the members has been described. However, in addition to the solder, a conductive paste that is cured by heat or light can also be used. By using the electrode members 30 and 30a to 30f, it is possible to reduce the strain at the conductive paste bonding interface and suppress the generation of cracks as well as heat dissipation.

  In the above description, copper is used as the metal material for constituting each of the electrode members 30, 30a to 30f. However, other conductive metals having relatively high thermal conductivity, such as aluminum, are used. You may do it.

  In the above description, one type of electrode member is used for one power module. Of course, a plurality of types of electrode members may be used for one power module.

10 IGBT
10a emitter electrode 10b gate electrode 20 insulating substrate 21, 22 copper foil 30, 30a, 30b, 30c, 30d, 30e, 30f electrode member 31 support 31a through hole 32 copper post 33, 35a, 35b, 36 copper layer 34 insulation Plate 40 Copper electrode 50 FWD
60 Copper base 70 Member 80 Refrigerant

Claims (20)

In a semiconductor device having a semiconductor element with an electrode on the surface,
An insulating support made of a ceramic material having a plurality of through holes penetrating between main surfaces;
A metal post disposed in each of the plurality of through holes;
A plurality of the metal posts and a bonding layer that electrically connects the electrodes of the semiconductor element,
A semiconductor device, wherein a conductor layer connected to the metal post is formed on a main surface of the support, and the plurality of metal posts are separated from each other via the support. In a semiconductor device having a semiconductor element with an electrode on the surface,
An electrode member comprising an insulating support made of a ceramic material having a plurality of through holes penetrating between main surfaces, and a metal post disposed in each through hole and joined to the inner surface of the through hole; ,
A bonding layer that electrically connects the electrode member and the electrode of the semiconductor element,
A semiconductor device, wherein the metal post is made of copper, and a conductor layer connected to the metal post is formed on a main surface of the support.   The semiconductor device according to claim 1, wherein the conductor layer is formed on a main surface of the support on the semiconductor element side.   The semiconductor device according to claim 3, wherein the electrode is bonded to the conductor layer.   The semiconductor device according to claim 1, wherein the conductor layer is formed on a main surface of the support opposite to the semiconductor element.   6. The semiconductor device according to claim 5, further comprising a connection conductor joined to the conductor layer.   The semiconductor device according to claim 1, wherein the bonding layer is a solder layer.   The semiconductor device according to claim 1, wherein an end of the metal post protrudes from at least one main surface of the support.   9. The semiconductor device according to claim 8, wherein a coolant is interposed between the metal post projecting from the support and the joint surface.   The semiconductor device according to claim 1, wherein an end of the metal post does not protrude from a main surface of the support. An insulating substrate having a conductor pattern to which an electrode of the other main surface of the semiconductor element is connected to at least one main surface;
The semiconductor device according to claim 1, wherein the electrode member is bonded between the electrode on the other main surface of the semiconductor element and the conductor pattern.   12. The electrode member is joined between the conductor pattern formed on the other main surface of the insulating substrate and a heat dissipation base that dissipates heat generated in the semiconductor element. Semiconductor device.   13. The semiconductor device according to claim 1, wherein the semiconductor element is an insulated gate bipolar transistor, and the electrode is at least one of an emitter electrode and a collector electrode of the insulated gate bipolar transistor. Semiconductor device.   The semiconductor device according to claim 1, wherein the semiconductor element is a diode, and the electrode is at least one of an anode electrode and a cathode electrode of the diode. In a method for manufacturing an electrode member to be bonded to an electrode of a semiconductor device,
A metal post is inserted into each through-hole of an insulating support made of a ceramic material having a plurality of through-holes penetrating between main surfaces, and the support and the metal post are bonded and fitted together. And forming a conductor layer on the main surface of the support to be joined to the electrode. In a method for manufacturing an electrode member to be bonded to an electrode of a semiconductor device,
A copper layer is formed on one main surface of an insulating support made of a ceramic material having a plurality of through holes penetrating between the main surfaces, and each of the through holes is electroplated using the copper layer as a seed. A metal post is formed in each through hole by filling the inside of the through hole with copper, and a conductor layer is formed on the main surface of the support to be joined to the electrode. Production method. In a semiconductor device having a semiconductor element with an electrode on the surface,
An insulating support made of a ceramic material having a plurality of through holes penetrating between main surfaces;
A metal post disposed in each of the plurality of through holes;
A solder layer that joins each of the plurality of metal posts and the electrode of the semiconductor element,
Each of the plurality of metal posts is separated from each other via the support, and an end of the metal post protrudes from at least one main surface of the support, and the metal post protrudes from the support A semiconductor device, wherein a refrigerant is interposed between the bonding surface and the semiconductor device. In a semiconductor device having a semiconductor element with an electrode on the surface,
An electrode member comprising an insulating support made of a ceramic material having a plurality of through holes penetrating between main surfaces, and a metal post disposed in each through hole and joined to the inner surface of the through hole; ,
A solder layer for joining the electrode member and the electrode of the semiconductor element,
The metal post is made of copper, the end of the metal post protrudes from at least one main surface of the support, and a coolant is interposed between the metal post protruding from the support and the joint surface. A semiconductor device characterized by the above. In a method for manufacturing an electrode member to be bonded to an electrode of a semiconductor device,
A metal post is inserted into each through-hole of an insulating support made of a ceramic material having a plurality of through-holes penetrating between main surfaces, and the support and the metal post are bonded and fitted together. The end of the metal post protrudes from at least one main surface of the support, and a coolant is interposed between the metal post protruding from the support and the joint surface. Manufacturing method of member for electrodes. In a method for manufacturing an electrode member to be bonded to an electrode of a semiconductor device,
A copper layer is formed on one main surface of an insulating support made of a ceramic material having a plurality of through holes penetrating between the main surfaces, and each of the through holes is electroplated using the copper layer as a seed. By filling the inside of the through hole with copper, a metal post is formed in each through hole, and the end of the metal post protrudes from at least one main surface of the support and protrudes from the support A method for producing an electrode member, wherein a refrigerant is interposed between a post and a joint surface.

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