JP2013197258A - 回路基板、半導体モジュールの製造方法 - Google Patents
回路基板、半導体モジュールの製造方法 Download PDFInfo
- Publication number
- JP2013197258A JP2013197258A JP2012061846A JP2012061846A JP2013197258A JP 2013197258 A JP2013197258 A JP 2013197258A JP 2012061846 A JP2012061846 A JP 2012061846A JP 2012061846 A JP2012061846 A JP 2012061846A JP 2013197258 A JP2013197258 A JP 2013197258A
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- Prior art keywords
- semiconductor element
- opening
- bonding layer
- wiring board
- bonding
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 242
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 42
- 238000009792 diffusion process Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 30
- 238000010030 laminating Methods 0.000 claims description 6
- 229910010272 inorganic material Inorganic materials 0.000 claims description 5
- 239000011147 inorganic material Substances 0.000 claims description 5
- 238000003475 lamination Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 abstract description 14
- 238000011049 filling Methods 0.000 abstract description 10
- 238000007906 compression Methods 0.000 abstract description 2
- 230000006835 compression Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 200
- 239000011521 glass Substances 0.000 description 26
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000011230 binding agent Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000005304 joining Methods 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 238000003825 pressing Methods 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000004080 punching Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 239000011800 void material Substances 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910007472 ZnO—B2O3—SiO2 Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910001923 silver oxide Inorganic materials 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 239000011135 tin Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910000416 bismuth oxide Inorganic materials 0.000 description 2
- 229910052810 boron oxide Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 239000006112 glass ceramic composition Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012061846A JP2013197258A (ja) | 2012-03-19 | 2012-03-19 | 回路基板、半導体モジュールの製造方法 |
| KR20147008956A KR20140070584A (ko) | 2011-09-09 | 2012-09-06 | 반도체 모듈, 회로기판 |
| US14/239,479 US20140217608A1 (en) | 2011-09-09 | 2012-09-06 | Semiconductor module, circuit board |
| PCT/JP2012/005668 WO2013035337A1 (ja) | 2011-09-09 | 2012-09-06 | 半導体モジュール、回路基板 |
| CN201280043286.0A CN103782379A (zh) | 2011-09-09 | 2012-09-06 | 半导体模块，电路基板 |
| DE201211003759 DE112012003759T5 (de) | 2011-09-09 | 2012-09-06 | Halbleitermodul, Schaltungs-Substrat |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012061846A JP2013197258A (ja) | 2012-03-19 | 2012-03-19 | 回路基板、半導体モジュールの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013197258A true JP2013197258A (ja) | 2013-09-30 |
| JP2013197258A5 JP2013197258A5 (enrdf_load_stackoverflow) | 2015-03-05 |
Family
ID=49395865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012061846A Withdrawn JP2013197258A (ja) | 2011-09-09 | 2012-03-19 | 回路基板、半導体モジュールの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2013197258A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016195178A (ja) * | 2015-03-31 | 2016-11-17 | アイシン・エィ・ダブリュ株式会社 | 半導体モジュール |
| JP2018085452A (ja) * | 2016-11-24 | 2018-05-31 | 株式会社ジェイデバイス | 半導体装置及びその製造方法 |
| JP2018120902A (ja) * | 2017-01-24 | 2018-08-02 | ゼネラル・エレクトリック・カンパニイ | 電力用電子回路パッケージおよびその製造方法 |
| US11177204B2 (en) | 2016-01-19 | 2021-11-16 | General Electric Company | Power electronics package and method of manufacturing thereof |
| WO2024150303A1 (ja) * | 2023-01-11 | 2024-07-18 | 三菱電機株式会社 | パワーモジュール |
-
2012
- 2012-03-19 JP JP2012061846A patent/JP2013197258A/ja not_active Withdrawn
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016195178A (ja) * | 2015-03-31 | 2016-11-17 | アイシン・エィ・ダブリュ株式会社 | 半導体モジュール |
| US11177204B2 (en) | 2016-01-19 | 2021-11-16 | General Electric Company | Power electronics package and method of manufacturing thereof |
| JP2018085452A (ja) * | 2016-11-24 | 2018-05-31 | 株式会社ジェイデバイス | 半導体装置及びその製造方法 |
| JP7028553B2 (ja) | 2016-11-24 | 2022-03-02 | 株式会社アムコー・テクノロジー・ジャパン | 半導体装置及びその製造方法 |
| JP2018120902A (ja) * | 2017-01-24 | 2018-08-02 | ゼネラル・エレクトリック・カンパニイ | 電力用電子回路パッケージおよびその製造方法 |
| JP7021854B2 (ja) | 2017-01-24 | 2022-02-17 | ゼネラル・エレクトリック・カンパニイ | 電力用電子回路パッケージおよびその製造方法 |
| WO2024150303A1 (ja) * | 2023-01-11 | 2024-07-18 | 三菱電機株式会社 | パワーモジュール |
| JP7520273B1 (ja) * | 2023-01-11 | 2024-07-22 | 三菱電機株式会社 | パワーモジュール |
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