JP2013187245A - Semiconductor light-emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve an appearance color without decreasing light extraction efficiency in a semiconductor light-emitting device in which an LED and a fluorescent substance are paired with each other.SOLUTION: A semiconductor light-emitting device comprises a base material, a semiconductor element mounted on the base material, a phosphor layer arranged on the semiconductor element and a transparent member arranged on the phosphor layer across a space. The transparent member has a particular uneven shape at least on one surface. The uneven shape has an arithmetic average roughness Ra (JIS B0601:1994) within a range of 0.2 μm-8 μm, in which a rate of a region of Ra and under is 50% and over to an area of the whole uneven shape.

Description

  The present invention relates to a semiconductor light-emitting device that uses a light-emitting element (LED) as a light source and performs color conversion with a phosphor layer, and more particularly to a semiconductor light-emitting device with an improved appearance.

  In a light-emitting device that uses an LED as a light source and performs color conversion with a phosphor layer, the phosphor layer that covers the light-emitting element is colored even by external light and exhibits a color other than white (generally yellow), thereby impairing the appearance of the device. This problem has been pointed out in the past. In particular, in a light emitting device used for a camera strobe or the like, there is a desire to erase the color of the phosphor layer.

  Various proposals have been made for this problem. For example, Patent Document 1 proposes that a light diffusing agent is added to a surface layer laminated on a phosphor layer so that the appearance color approaches white. It is also known to use translucent glass such as ground glass as a cover for covering the light emitting device. However, when ground glass or the like is used or when a light diffusing agent is added, there is a problem that the light extraction effect from the light emitting device is reduced and the luminous intensity of the light emitting device is reduced. As a technique for improving this, forming a concavo-convex shape on the surface of the sealing resin layer covering the phosphor layer (Patent Document 2), or facing a phosphor layer of a lens disposed on the phosphor layer It has been proposed to form a prism shape on the surface (Patent Document 3).

JP 2009-16779 A JP 2009-302489 A JP 2011-44610 A

  However, in the technique described in Patent Document 1, in order to bring the appearance color close to white, it is necessary to add a large amount of diffusing agent, so that the change in luminous intensity becomes large, and 90% or more of useful value cannot be secured. is there. In the technique described in Patent Document 2, after forming a sealing resin layer on the phosphor layer, a predetermined uneven shape must be created on the surface using a mold or the like. When the area of the surface of the layer is about 1 mm square, it takes time and cost to process a fine shape with good reproducibility, and manufacturing is difficult. In the technique described in Patent Document 3, since the lens itself before being mounted on the light emitting device is processed, the manufacturing difficulty is reduced as compared with the case of processing after mounting, but the prism apex angle is larger than 90 degrees. In the case of a lens, light with an emission angle of white light from the LED of about 30 degrees or more is likely to undergo total reflection on the slope of the prism, so the white light emitted from the lens may further increase the emission angle and cause a decrease in luminous intensity. is there.

  An object of the present invention is to improve the appearance color, which is easy to manufacture and does not reduce the light extraction efficiency.

  In order to solve the above problems, the present inventors have conducted research on the surface shape of the transparent member disposed on the phosphor layer. As a result, the present invention has a predetermined surface roughness range and relatively rough peaks and valleys. When there is a structure with peaks and valleys that are finer than the average surface roughness between the two, the color of the underlying material (phosphor layer) is effectively whitened while maintaining high light extraction efficiency It has been found out that it can be done, and has led to the present invention.

  That is, the semiconductor light emitting device of the present invention includes a base material, a semiconductor element mounted on the base material, a phosphor layer disposed on the semiconductor element, and a space between the phosphor layer. The transparent member has a concavo-convex shape formed on at least one surface, and the concavo-convex shape has an arithmetic average roughness Ra (JIS B0601: 1994) of 0.2 to 8 μm. And the ratio of the region which is equal to or less than the Ra is 50% or more of the total area of the concavo-convex shape.

  The uneven shape can be provided, for example, on the entire surface of one side or both sides of the transparent member. Or it can provide partially in the area | region containing the directly upper side of a fluorescent substance layer of the single side | surface or both surfaces of a transparent member.

  Moreover, the semiconductor light-emitting device of this invention can arrange | position two or more transparent members with the uneven | corrugated shape formed in the surface.

  According to the present invention, by arranging a transparent member having a specific concavo-convex shape on the surface, the color of the phosphor layer is made inconspicuous and the appearance color is close to white while maintaining good light extraction efficiency. it can. A transparent member having a specific concavo-convex shape can be easily manufactured by treating the surface of a generally available transparent plate glass, acrylic plate, etc., and can suppress the labor and cost increase of light emitting device manufacture. it can.

The side view which shows 1st embodiment of the semiconductor light-emitting device of this invention. (A) is a figure which shows the surface uneven | corrugated shape of the transparent member of the semiconductor light-emitting device of this invention, (b) and (c) are figures which show general surface uneven | corrugated shape, respectively. The side view which shows the example of a change of 1st embodiment. The side view which shows 2nd embodiment of the semiconductor light-emitting device of this invention. The side view which shows the example of a change of 2nd embodiment. The side view which shows 3rd embodiment of the semiconductor light-emitting device of this invention. The graph which shows the surface roughness of the transparent member (rough surface glass A) used for Example 1. FIG. The graph which shows the surface roughness of the transparent member (rough surface glass X) used for the comparative example 1. FIG. The graph which shows the chromaticity of the semiconductor light-emitting device of an Example and a comparative example. The graph which shows the relationship between surface roughness Ra and luminous intensity.

  Embodiments of the semiconductor light emitting device of the present invention will be described below.

<First embodiment>
FIG. 1 is a side sectional view showing a first embodiment of the semiconductor light emitting device of the present invention. The semiconductor light emitting device 10 includes a package substrate 1, an LED 2 mounted on the substrate 1, a phosphor layer 3 provided on the LED 2, and a transparent member 4.

  The base material 1 is composed of a cup-type PLCC (Plastic leaded chip carrier) having a bottom surface and a side wall, a ceramic case, and the like, and a conductive wire pattern for connecting the LED 2 to a drive circuit and a power source (not shown) is formed. The electrode of the conductor pattern is formed on the surface on which is mounted. A combination of a flat base material and a cylindrical wall material fixed on the base material may be used instead of the cup-type base material 1. The shape is not limited to that shown in FIG. 1, and the wall surface or wall material may be inclined with respect to the direction perpendicular to the bottom surface, and the opening on the top surface may be widened. In addition, a reflective layer is formed on the inner surface of the substrate 1 as necessary.

  For example, LED 2 that generates blue light or ultraviolet light is used. The phosphor layer 3 is formed by dispersing phosphor powder in a resin such as an epoxy resin or a silicone resin. The phosphor absorbs light emitted from the LED 2 and generates light having a different wavelength, and one or a mixture of two or more kinds of appropriate materials are used in accordance with the emission wavelength of the LED 2. When the LED 2 generates blue light or ultraviolet light, a YAG phosphor or a sialon phosphor is usually used. These phosphors exhibit a yellow color, and when the transparent member 4 is not present, this yellow color appears as the color of the light emitting device.

  The transparent member 4 is a plate material made of a highly heat-resistant transparent resin such as glass, polycarbonate, and acrylic, and the material itself has high light transmittance, but diffuses light by a specific uneven shape formed on the surface 41, As a result, the color of the phosphor layer 3 can be made inconspicuous and close to white. The thickness of the transparent member 4 is not particularly limited. For example, in the case of a 1 mm square package, the thickness is about 0.05 mm to 1.1 mm. Is more desirable.

  Hereinafter, the surface shape of the transparent member 4 will be described with reference to FIG. FIG. 2A shows the surface shape of the transparent member 4 of the present embodiment, and FIGS. 2B and 2C show uneven shapes having different surface roughnesses. When the surface is roughened by sandblasting the glass or the like, as shown in FIG. 2 (b), the height of the concavo-convex peaks and the depth of the valleys vary, but the overall is similar. In the distribution, there are scattered mountains and valleys with variations in height and depth. In the case of such a concavo-convex shape, high light diffusibility is obtained when the average surface roughness Ra is in a predetermined range, and as a result, the color of what is below the transparent member 4 becomes a color close to white. However, in this case, the light transmittance is also lowered, and as a result, the luminous intensity of the light emitting device is lowered. On the other hand, as shown in FIG. 2 (c), when the average surface roughness Ra as a whole is smaller than a predetermined range, it becomes close to a smooth member, so that the light transmission is improved but the light diffusibility is lowered. Therefore, the effect of bringing the color of the underlying object closer to white is small.

  On the other hand, the surface shape shown in FIG. 2 (a) is similar to FIG. 2 (b) in the average value of the height difference (for example, the ten-point average roughness Rz). A region 4A having a finer surface roughness than the surface roughness defined by these high peaks and valleys exists between or between relatively deep valleys. The transparent member 4 having such a surface shape has a high light transmittance as a whole compared with the surface shape shown in FIG. Moreover, since high peaks and valleys are scattered between these regions 4A, the light diffusibility is maintained. As a result, when the yellow light emitted from the phosphor layer 3 is emitted from the region 4A to the outside of the transparent member 4, the light is scattered from the mountains and valleys existing adjacent to it or from the inside. Is mixed, and the yellowishness is reduced to light close to white light.

Specifically, the surface shape is 0.2 μm to 8 μm, preferably 0.3 μm to 5.5 μm in arithmetic average roughness Ra (JIS B0601: 1994) of the entire measurement area, and the height of the mountain. And the area of the area | region where the depth of a trough is smaller than arithmetic mean roughness Ra is 50% or more of the whole measurement area, Preferably it is 60% or more. Further, Ra in the region where the height of the mountain and the depth of the valley are smaller than the arithmetic average roughness Ra is preferably a value of 2/3 or less of Ra of the entire measurement area. By setting it as such a range, high light diffusibility can be acquired, maintaining the effect mentioned above, ie, the light transmittance.
In particular, when the concavo-convex shape is provided on the entire surface of one side of the transparent member 4, Ra is set to 8 μm or less, and when the concavo-convex shape is provided on the entire surface of both surfaces, Ra is set to 5.5 μm or less so Can be maintained. Further, when the uneven shape is provided on the entire surface of one side, Ra can be maintained at 6.5% or less. When the uneven shape is provided on the entire surface of both surfaces, Ra can be maintained at 95% or more by setting Ra to 2 μm or less. .

  Although the method of making the surface shape of the transparent member 4 into the range mentioned above is not limited, It is preferable to combine a physical roughening process and a chemical roughening process. For example, the surface of a transparent plate-shaped member is sandblasted so as to have a predetermined Ra, and then etched by applying it to an etching solution such as hydrogen fluoride. The ratio of the above-described region having a small roughness can be adjusted by changing the etching process conditions (type and concentration of the etchant, processing time, processing temperature, etc.). Further, the etching treatment may be performed by spraying the etching solution on the surface of the transparent member.

  As shown in FIG. 1, the transparent member 4 may have the surface 41 on which the above-described uneven shape is formed facing outward, or may be disposed outward. Similar effects can be obtained.

  Moreover, the surface 43 opposite to the uneven surface 41 of the transparent member 4 may be flat, or an uneven shape may be formed as shown in FIG. In this case, the uneven shape of the surface 43 on the opposite side can be the same uneven shape as the surface 41. Moreover, as long as it does not inhibit light transmittance, the shape is not limited to the same uneven shape, and may have a shape having other optical effects and physical effects. For example, it is possible to arrange a predetermined uneven surface 41 on the inner side, and to form a surface shape having a high antifouling effect on the outer surface, or to form a lens shape having a light collecting effect. .

  An example of a method for manufacturing the semiconductor light emitting device of this embodiment will be described. First, the LED 2 is die-bonded on the package substrate 1 and then bonded with the Au wire 5. Next, a resin composition constituting the phosphor layer 3 is potted on the LED 2 with a dispenser or the like to form and cure the phosphor layer 3. The portions other than the phosphor layer 3 of the LED 2 need not be resin-sealed, but a resin layer may be provided. Separately from this, a glass plate having a concavo-convex shape formed on the surface is prepared, and this is cut in accordance with the upper surface opening of the package substrate 1 to prepare a glass piece. Finally, this glass piece is bonded to the upper surface opening of the package substrate 1 on which the LED 2 and the phosphor layer 3 are mounted with a heat-resistant adhesive or the like to obtain the light emitting device 10.

  Although FIG. 1 shows the light emitting device 10 composed of a single LED, a light emitting device in which a plurality of LEDs are mounted on a substrate can be similarly manufactured.

  According to the present embodiment, a semiconductor light-emitting device having an improved appearance color without reducing the amount of light emission is obtained by using a member having a specific uneven shape formed on the surface as a transparent member that covers the package of the light-emitting device. be able to.

<Second embodiment>
The semiconductor light-emitting device of the first embodiment uses a transparent member having a concavo-convex shape formed on the entire surface, but the semiconductor light-emitting device of the present embodiment uses a transparent member partially having a concavo-convex shape. It is characterized by that. FIG. 4 shows the overall configuration of the semiconductor light emitting device 10 of the present embodiment. In FIG. 4, elements other than the transparent member are the same as those in the first embodiment, are denoted by the same reference numerals, and description thereof is omitted.

  In the transparent member 40 of the present embodiment, an uneven shape having the same characteristics as the surface 41 of the transparent member 4 of the first embodiment is formed on one surface 41, and on a part 43A of the surface 43 on the opposite side thereof. An uneven shape having the same characteristics is formed. The portion 43A is directly above the phosphor layer 3 and has the same or slightly larger area than the area where the phosphor layer 3 is projected onto the transparent member 40.

  As a method of partially forming a concavo-convex shape on the surface of the transparent member 40, for example, in a state where a masking tape is applied by applying a protective tape to a region other than a region where the concavo-convex shape is to be formed or by applying a resist, The surface roughening treatment and the chemical roughening treatment, or after forming a predetermined uneven shape on the whole, the region 43B other than the portion 43A is polished, or when the transparent member is a resin, other than the portion 43A A method of flattening unevenness by forming a layer of the same resin as that constituting the transparent member in the region 43B can be employed.

  Also in the present embodiment, by arranging a specific concavo-convex shape in which a region having a small surface roughness exists between the high peaks and valleys of the transparent member 40, white light due to light diffusibility is maintained while maintaining light transmittance. In the present embodiment, a specific uneven shape is doubly arranged in the region immediately above the phosphor layer 3 where the color of the phosphor layer 3 is most conspicuous. This can further enhance the whitening effect. Moreover, the light emitted from the LED 2 and the phosphor layer 3 when the light emitting device emits light transmits not only the concavo-convex portion but also the flat portion around it. As a result, it is possible to prevent a decrease in the amount of emitted light due to the overlapping of the uneven shapes.

  FIG. 4 shows a case where one surface 41 of the transparent member 40 is formed with a concavo-convex shape on the entire surface and the other surface is formed with a partial concavo-convex shape, but as a modification of the present embodiment, FIG. As shown in FIG. 5, it is possible to form a partial uneven shape only in the region corresponding to the phosphor layer 3 directly on both surfaces 41 and 43, and the same effect can be obtained. Further, the one surface 41 is a flat surface, and a portion in which a partially uneven region 43A is formed only on the other surface is also included in the present embodiment.

<Third embodiment>
The semiconductor light emitting devices of the first and second embodiments use a single transparent member 4 or 40, but this embodiment is characterized by using a plurality of transparent members. FIG. 6 shows the overall configuration of the semiconductor light emitting device 100 of this embodiment. In FIG. 6, it is the same as 1st embodiment except having used two transparent members 4, The same element is shown with the same code | symbol and the description is abbreviate | omitted.

  As illustrated, the semiconductor light emitting device 100 of the present embodiment has a structure in which the transparent member 4 is further stacked on the transparent member 4 of the semiconductor light emitting device 10 of FIG. The second transparent member 4 is stuck on a high heat-resistant adhesive layer provided on the outer periphery of the first transparent member 4. The interval between the two transparent members 4 is not particularly limited as long as there is a substantial gap between them, but is preferably about 0.02 mm to 0.5 mm, and is adjusted by adjusting the thickness of the adhesive layer. be able to.

  In the illustrated embodiment, each of the two transparent members 4 has a structure in which specific uneven shapes are formed on both surfaces, and the uneven shapes are stacked in a quadruple manner. With this structure, the appearance color of the semiconductor light emitting device of this embodiment is almost the same as white, and the color of the phosphor layer 3 on the lower side cannot be visually recognized. Moreover, in the uneven shape of each layer, small areas of Ra with good light transmittance are randomly scattered, and these are randomly shifted from layer to layer, so that the uneven shape like a general ground glass is superimposed. Compared to the case, the light transmittance is better, and a practically sufficient light emission amount can be obtained at the time of light emission.

  FIG. 6 shows a case where the two transparent members 4 are both unevenly formed on the entire surface, but one or both of them are partially as shown in FIG. 4 or FIG. It may be a transparent member having a concavo-convex shape or a combination thereof. Moreover, it is also possible to combine the transparent member 4 in which uneven | corrugated shape was formed only in one side as shown in FIG.

Examples of the semiconductor light emitting device of the present invention will be described below.
A blue light emitting LED element (1 mm square) is die-bonded to the bottom of a ceramic case (5 mm x 5 mm, height: 1 mm) with wiring, and then Au wire is bonded and mounted thereon, and a phosphor layer (fluorescent light) The body: YAG phosphor, resin: epoxy resin) was formed with a thickness of about 150 μm to produce a package.

  On the other hand, as the transparent member to be disposed on the package, there were prepared rough glass A and X whose one surface was roughened, and rough glass B and Y whose both surfaces were roughened. The rough glass A is one obtained by masking one surface of a transparent glass and subjecting the other surface to sandblast treatment, and then etching by applying it to an etching solution of hydrogen fluoride. The rough glass B is obtained by subjecting both surfaces of a transparent glass to sand blasting, and then applying etching to a hydrogen fluoride etchant. On the other hand, the rough glass X is obtained by masking one surface of a transparent glass and sandblasting the other surface. The rough glass Y is obtained by sandblasting both surfaces of the transparent glass. Apart from these, one side of the transparent glass is sandblasted on both sides in a state where the area other than the central 1.2 mm square area is masked, and then etched with a hydrogen fluoride etchant. A roughened rough glass C is prepared, masked in the center of both sides except for a 1.2 mm square area, both surfaces are sandblasted, etched with a hydrogen fluoride etchant, and both sides are etched. A partially roughened glass D was prepared. A transparent glass having a thickness of 0.1 mm was used for the production of the rough glass.

  The shape of the concavo-convex surface of each rough surface glass was measured using a stylus type surface roughness meter (Dektak 6M manufactured by Veeco), arithmetic average roughness Ra (JIS B0601: 1994), maximum peak height Rp (JIS B0601: 1994), and the ratio of the area where the peak height or valley depth is the arithmetic average roughness Ra or more (area I) and the area where Ra is less than or equal to the area (area II). Moreover, the average roughness was calculated | required about area | region I and II, respectively. The average roughness of these areas is the arithmetic average roughness calculated excluding the other areas. The results are shown in Table 1.

  The result of having measured the surface shape of the rough surface glass A and the rough surface glass X is shown in FIG.7 and FIG.8. As shown in the figure, the rough glass A had more irregular areas than the rough glass X.

<Example 1>
After assembling the light emitting device by fixing the rough glass A (one side of the whole rough surface) with an adhesive on the ceramic case of the package so that the uneven surface is outside as shown in FIG. The appearance color when the LED was not turned on and the change in luminous intensity when the LED was turned on were measured.
The appearance color was measured by measuring the chromaticity of the phosphor using a luminance meter under a standard light source. Moreover, the change of luminous intensity measured the luminous intensity about the case where rough surface glass is not installed, and the case where it is installed, and calculated the ratio when the case where rough surface glass is not installed was set to 100. The results are shown in FIG.

<Example 2>
As shown in FIG. 3, after the rough glass B (both surfaces are rough) is fixed on the ceramic case of the package with an adhesive and the light emitting device is assembled, the LED is turned off in the same manner as in Example 1. The appearance color and the change rate of the luminous intensity when the LED was turned on were measured. The results are shown in FIG.

<Comparative Examples 1 and 2>
After assembling the light-emitting device by fixing the rough glass X (one-sided rough surface) with the adhesive on the ceramic case of the above package, the external color when the LED is not lit and when the LED is lit as in Example 1. The rate of change in luminous intensity was measured (Comparative Example 1). Similarly, after the rough glass Y (both surfaces are rough) is fixed on the ceramic case of the package with an adhesive, the appearance color when the LED is not lit and the luminous intensity when the LED is lit are the same as in Example 1. The change was measured (Comparative Example 2). The results are shown in FIG.

<Example 3>
As shown in FIG. 4, the rough glass C (one-sided partial rough surface) is placed on the ceramic case of the above package so that the rough surface area of the partially roughened surface is located directly above the phosphor layer. After assembling the light emitting device with an adhesive, the appearance color when the LED was not lit and the change in luminous intensity when the LED was lit were measured in the same manner as in Example 1. The results are shown in FIG.

<Example 4>
As shown in FIG. 5, the rough glass D (both sides partially rough surface) is placed on the ceramic case of the above package so that the rough surface area of the partially roughened surface is located immediately above the phosphor layer. After assembling the light emitting device with an adhesive, the appearance color when the LED was not lit and the change in luminous intensity when the LED was lit were measured in the same manner as in Example 1. The results are shown in FIG.

<Example 5>
As shown in FIG. 6, after using the two pieces of the rough glass B to fix the light emitting device by sequentially fixing on the ceramic case of the package with an adhesive, the LED is not lit in the same manner as in Example 1. The change in appearance color and luminous intensity when the LED was turned on were measured. The results are shown in FIG.

表２中、色度はＣＩＥ表色系による。また蛍光体の外観色の色度（Ｃｘ、Ｃｙ）は、（Ｃｘ＝0.463、Ｃｙ＝0.491）であった。また標準白色板の色度は（Ｃｘ＝0.395、Ｃｙ＝0.397）である。

In Table 2, the chromaticity is based on the CIE color system. Further, the chromaticity (Cx, Cy) of the appearance color of the phosphor was (Cx = 0.463, Cy = 0.491). The chromaticity of the standard white plate is (Cx = 0.395, Cy = 0.398).

  As shown in FIG. 9 and Table 2, the appearance color of the light-emitting devices of Examples 1 to 5 is such that the appearance color of the phosphor is a standard white plate (Cx = 0.395, Cy = 0.395). It was confirmed that when both surfaces were roughened, the color was closer to white than when only one surface was roughened, and closer to white when two sheets were used. Further, as can be seen from the comparison between Example 1 (entire rough surface) and Example 3 (partial rough surface), or the comparison between Example 2 (entire rough surface) and Example 4 (partial rough surface), the rough surface. Even if the converted region was partial, the same whitening effect as that obtained when the entire region was provided was obtained.

  About the luminous intensity change rate of Examples 1-5, the luminous intensity of 95% or more of the case where a transparent member is not arrange | positioned was obtained even when both surfaces were roughened even if both surfaces were roughened. In particular, when the surface was partially roughened, it was confirmed that the change in luminous intensity was very small and high light extraction efficiency was obtained.

  On the other hand, in the light emitting device of Comparative Example 1, the surface roughness Ra of the transparent member was almost the same as the surface roughness of the transparent member of Example 1, and the appearance color was almost the same as that of Example 1. However, in the light emitting device of Example 1, no decrease in luminous intensity was observed, whereas in Comparative Example 1, the light extraction efficiency was reduced to 95% as compared with the case where no transparent member was disposed. Similarly, the light emitting device of Comparative Example 2 was able to erase the color of the phosphor layer to the same extent as that of Example 2, but the luminous intensity change was 88%, which was significantly lower than that of Example 2.

  Furthermore, in order to investigate the relationship between Ra and the change in luminous intensity, the surface blasting treatment A used in Example 1 (one-sided entire surface) and the surfaced glass B used in Example 2 were subjected to sandblasting. A plurality of rough glass with different Ra were prepared by changing the particle diameter of the inorganic particles (alumina) used in the above. Using the plurality of rough surface glasses as transparent members, a light emitting device was assembled in the same manner as in Example 1 and Example 2, and the luminous intensity during LED lighting was measured. In this case as well, the ratio of the measured luminosity when the luminosity when the transparent member is not disposed is 100 was calculated. The results are shown in Table 3 and FIG.

  As can be seen from the results shown in FIG. 10, the brightness decreases as Ra increases in both the single-sided rough surface and the double-sided rough surface, but Ra is 8 μm or less for the single-sided rough surface, and Ra is 5. If it is 5 μm or less, 90% luminous intensity that cannot be obtained by the conventional method can be obtained, and if Ra is 6.5 μm or less for a single-sided rough surface and Ra is 2 μm or less for a double-sided rough surface, a transparent body is disposed. It was found that a luminous intensity of 95% or more, which is substantially equivalent to that in the case where it is not used, can be obtained.

  According to the present invention, there is provided a semiconductor light emitting device having high light extraction efficiency and good appearance color.

DESCRIPTION OF SYMBOLS 10,100 ... Semiconductor light-emitting device, 1 ... Package base material, 2 ... LED, 3 ... Phosphor layer, 4, 40 ... Transparent member, 41 ... Uneven surface, 43. ..A surface on the opposite side to the uneven surface, 43A ... A region where an uneven shape is formed.

Claims (5)

A base material, a semiconductor element mounted on the base material, a phosphor layer disposed on the semiconductor element, and a transparent member disposed on the phosphor layer with a space interposed therebetween. A semiconductor light emitting device,
The transparent member has a concavo-convex shape formed on at least one side,
The concavo-convex shape has an arithmetic average roughness Ra (JIS B0601: 1994) in the range of 0.2 μm to 8 μm, and the ratio of the region equal to or less than Ra is 50% or more of the entire surface of the concavo-convex shape. A semiconductor light-emitting device. The semiconductor light emitting device according to claim 1,
The semiconductor light emitting device, wherein the uneven shape is formed on the entire surface of at least one surface of the transparent member. The semiconductor light emitting device according to claim 1,
The semiconductor light emitting device is characterized in that the uneven shape is partially formed in a region including at least one surface of the transparent member and immediately above the phosphor layer. A semiconductor light-emitting device according to any one of claims 1 to 3,
The semiconductor light emitting device, wherein the uneven shape is formed on both surfaces of the transparent member. A semiconductor light emitting device according to any one of claims 1 to 4,
A semiconductor light emitting device comprising a plurality of the transparent members.

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