JP2013182857A - Lighting device - Google Patents

Lighting device Download PDF

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Publication number
JP2013182857A
JP2013182857A JP2012047837A JP2012047837A JP2013182857A JP 2013182857 A JP2013182857 A JP 2013182857A JP 2012047837 A JP2012047837 A JP 2012047837A JP 2012047837 A JP2012047837 A JP 2012047837A JP 2013182857 A JP2013182857 A JP 2013182857A
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Prior art keywords
led
circuit board
led device
lighting device
emitting
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JP2013182857A5 (en
JP5829150B2 (en
Inventor
Takae Iwai
貴愛 岩井
Yasuaki Kayanuma
安昭 萱沼
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Citizen Holdings Co Ltd
Citizen Electronics Co Ltd
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Citizen Holdings Co Ltd
Citizen Electronics Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Abstract

PROBLEM TO BE SOLVED: To provide a lighting device of bulb type having a wide luminous intensity distribution irrespective of a simple structure inside a globe.SOLUTION: A circuit board 44 included in a lighting device has a surface mounted LED device 42 mounted in the central part and a side light-emitting LED device 43 mounted in a periphery part. This surface mounted LED device 42 has a strong luminous intensity distribution in a vertical direction of the circuit board 44, and the side light-emitting LED device 43 has a strong luminous intensity distribution in a horizontal direction of the circuit board 44. As a result, the bulb-type LED lamp 40 (lighting device) has a simple structure inside the globe 41 while having a wide luminous intensity distribution.

Description

本発明は、発光ダイオード(LED)を実装した回路基板を備える電球型の照明装置に関する。   The present invention relates to a light bulb-type lighting device including a circuit board on which a light emitting diode (LED) is mounted.

近年、消費電力の多い白熱電球の代替として、消費電力が少なく、白熱電球と形状が類似した電球型LEDランプが普及してきている。しかしながら、電球型LEDランプから出射する光は指向性が強いため口金側が暗くなってしまっていた。この対策として例えば特許文献1の図1に示された照明器具(電球型の照明装置)がある。   In recent years, as an alternative to incandescent lamps with high power consumption, light bulb-type LED lamps with low power consumption and similar in shape to incandescent lamps have become widespread. However, the light emitted from the bulb-type LED lamp has a strong directivity, so the base side is dark. As a countermeasure, for example, there is a lighting fixture (bulb-type lighting device) shown in FIG.

特許文献1の図1を図9に再掲示し更に詳しく説明する。図9は従来の電球型LEDランプの全体構成を一部縦断面で示す正面図である。ランプ1は、金属製の外郭部材であるカバー2、光源装置11、この光源装置11を被覆する光源カバー21(グローブともいう)、点灯回路25、口金31を具備している。光源装置11は発光部12(LED)と導光体17を備えている。導光体17の頂上には反射面20があり、その下に出射部19がある。   FIG. 1 of Patent Document 1 is shown again in FIG. 9 and will be described in more detail. FIG. 9 is a front view showing a part of the entire configuration of a conventional light bulb type LED lamp in a longitudinal section. The lamp 1 includes a cover 2 that is a metal outer member, a light source device 11, a light source cover 21 (also referred to as a globe) that covers the light source device 11, a lighting circuit 25, and a base 31. The light source device 11 includes a light emitting unit 12 (LED) and a light guide body 17. There is a reflecting surface 20 on the top of the light guide 17 and an emitting portion 19 below.

発光部12から導光体17内へ入射した光は反射面20へ導光され、反射面20により反射された光の一部が横方向へ出射する。この横方向へ出射した光は光源カバー21の頂端側の球面により反射されて発光部12側へ投光される。この結果、一般照明用電球と同様に口金31側にも投光することができる。   The light that has entered the light guide 17 from the light emitting unit 12 is guided to the reflecting surface 20, and a part of the light reflected by the reflecting surface 20 is emitted in the lateral direction. The light emitted in the lateral direction is reflected by the spherical surface on the top end side of the light source cover 21 and is projected to the light emitting unit 12 side. As a result, it is possible to project light to the base 31 side as well as the general lighting bulb.

特開2009−289697号公報 (図1)JP 2009-289697 A (FIG. 1)

図9の照明器具は光源カバー21の内側に光源装置11に含まれる導光体17を付加し、配光特性を改善したものということができる。しかしながら導光体17を付加することは部品増とともに組み立て工数増を招くだけでなく、構造の複雑化も課題となる。例えば導光体17の質量が上部に存在するため、導光体17を発光部基板13に固定させる構造は強固なものにしなくてはならない。また導光体17は形状が複雑なうえ、透明樹脂部と反射板20との2体構造でもある。反射板20も頂点側に光を出射させるため半透過反射板にしたほうが良い。以上のようにグローブの内部を立体的な構造にすると、これに付随し様々な問題が生じることが多い。すなわち光源となるLEDを実装した状態の回路基板をできるかぎり平坦にすることが望まれる。   9 can be said to have improved light distribution characteristics by adding the light guide 17 included in the light source device 11 inside the light source cover 21. However, the addition of the light guide 17 causes not only an increase in the number of parts but also an increase in the number of assembling steps, and a complicated structure becomes a problem. For example, since the mass of the light guide 17 is present at the upper part, the structure for fixing the light guide 17 to the light emitting unit substrate 13 must be strong. In addition, the light guide 17 has a complicated shape, and also has a two-body structure including a transparent resin portion and a reflection plate 20. The reflecting plate 20 is also preferably a semi-transmissive reflecting plate in order to emit light toward the apex side. As described above, when the inside of the glove has a three-dimensional structure, various problems often accompany it. In other words, it is desirable to make the circuit board on which the LED serving as the light source is mounted as flat as possible.

そこで本発明は、上記課題に鑑みてなされたものであり、口金方向に広がる配光分布を持たせてもグローブ内の構造が立体的にならない電球型の照明装置を提供することを目的としている。   Therefore, the present invention has been made in view of the above problems, and an object of the present invention is to provide a light bulb-type lighting device in which the structure in the globe does not become three-dimensional even if the light distribution is widened in the direction of the base. .

光源となるLEDを実装した回路基板を備える電球型の照明装置において、
前記複数のLEDのうち前記回路基板の中央部に実装する前記LEDがベアチップのLEDダイであるか、又は表面実装型LED装置であり、
前記回路基板周辺部に実装する前記LEDが側面発光型LED装置である
ことを特徴とする。
In a bulb-type lighting device including a circuit board on which an LED serving as a light source is mounted,
Of the plurality of LEDs, the LED mounted on the center of the circuit board is a bare-chip LED die, or a surface-mounted LED device,
The LED mounted on the periphery of the circuit board is a side-emitting LED device.

本発明の照明装置はグローブ内に複数のLEDを実装した回路基板を備えている。LEDは少なくとも二つに分類される。一方のLEDは、回路基板の中央に実装され、主に回路基板の垂直方向に光を放射するLEDであり、他方のLEDは、回路基板の周辺に配置され、主に回路基板の水平に光を放射するLEDである。このようにして回路基板の中央部に実装されたLEDと、回路基板の周辺に実装されたLEDとが分担して回路基板の垂直方向と水平方向に光を放射する。この結果、本発明の照明装置は広い配光分布が得られ、LEDを実装した状態の回路基板は平面的になっている。また回路基板中央部に実装するLEDはベアチップであるLEDダイでも表面実装型LED装置であってもよい。   The lighting device of the present invention includes a circuit board on which a plurality of LEDs are mounted in a globe. LEDs are classified into at least two. One LED is mounted at the center of the circuit board and emits light mainly in the vertical direction of the circuit board, and the other LED is arranged around the circuit board and mainly emits light horizontally on the circuit board. It is LED which radiates. In this way, the LED mounted on the central portion of the circuit board and the LED mounted on the periphery of the circuit board share and emit light in the vertical and horizontal directions of the circuit board. As a result, the illumination device of the present invention has a wide light distribution, and the circuit board on which the LEDs are mounted is planar. The LED mounted on the center of the circuit board may be an LED die that is a bare chip or a surface-mounted LED device.

前記側面発光型LED装置は、前記回路基板に対し垂直なサブマウント基板と、底面及び上面、側面を囲む枠状の反射樹脂と、前記サブマウント基板に実装されたLEDダイと、該LEDダイを被覆する被覆樹脂とを備えていても良い。   The side-emitting LED device includes a submount substrate perpendicular to the circuit board, a frame-shaped reflective resin surrounding the bottom surface, the top surface, and the side surface, an LED die mounted on the submount substrate, and the LED die. You may provide the coating resin to coat | cover.

前記側面発光型LED装置は、前記回路基板に対し垂直なサブマウント基板と、上面及側面を覆う反射樹脂と、前記サブマウント基板に実装されたLEDダイと、該LEDダイを被覆する被覆樹脂とを備えていても良い。   The side-emitting LED device includes a submount substrate that is perpendicular to the circuit board, a reflective resin that covers an upper surface and a side surface, an LED die that is mounted on the submount substrate, and a coating resin that covers the LED die. May be provided.

前記回路基板は前記側面発光型LED装置の実装部に切り欠き部があっても良い。   The circuit board may have a notch in the mounting portion of the side-emitting LED device.

前記被覆樹脂が蛍光体を含有していても良い。   The coating resin may contain a phosphor.

前記側面発光型LED装置に含まれるLEDダイは、上面及び側面にそれぞれ上面反射層及び側面蛍光部材を備え、底面に接続用電極が付着し、該接続用電極が前記回路基板の配線電極と接続していても良い。   The LED die included in the side light emitting LED device includes an upper surface reflection layer and a side surface fluorescent member on the upper surface and the side surface, respectively, and a connection electrode is attached to the bottom surface, and the connection electrode is connected to the wiring electrode of the circuit board. You may do it.

前記表面実装型LED装置に含まれるLEDダイは、上面及び側面がそれぞれ上面蛍光体層及び側面反射部材で被覆され、底面に接続用電極が付着し、該接続用電極が前記回路基板の配線電極と接続していても良い。   The LED die included in the surface-mounted LED device has an upper surface and side surfaces coated with an upper surface phosphor layer and a side surface reflecting member, a connection electrode is attached to the bottom surface, and the connection electrode is a wiring electrode of the circuit board You may connect with.

以上のように本発明の照明装置は、2種類のLEDで回路基板の垂直及び水平方向に光を放射させることにより広い配光分布が得られる。このときパッケージ状態のLED装置かベアチップ状態のLEDダイを回路基板に実装するだけなので、回路基板が比較的平坦になる。この結果、本発明の照明装置は、口金方向に広がる配光分布を持たせてもグローブ内の構造が立体的にならない。   As described above, the illumination device of the present invention can obtain a wide light distribution by emitting light in the vertical and horizontal directions of the circuit board with two types of LEDs. At this time, since the LED device in the package state or the LED die in the bare chip state is simply mounted on the circuit substrate, the circuit substrate becomes relatively flat. As a result, the illumination device of the present invention does not have a three-dimensional structure in the globe even if it has a light distribution that spreads in the direction of the base.

本発明の第1実施形態の照明装置の全体構成を一部縦断面で示す正面図。The front view which shows the whole structure of the illuminating device of 1st Embodiment of this invention in a partial longitudinal cross section. 図1に示した照明装置に含まれる回路基板の平面図。The top view of the circuit board contained in the illuminating device shown in FIG. 図2に示した回路基板とこの回路基板に実装されたLEDの断面図。Sectional drawing of LED mounted in the circuit board shown in this circuit board, and this circuit board. 図3に示したLEDのうちの側面発光型LED装置の側面図。FIG. 4 is a side view of a side-emitting LED device among the LEDs shown in FIG. 3. 本発明の第2実施形態の照明装置に含まれる回路基板とLEDの断面図。Sectional drawing of the circuit board and LED contained in the illuminating device of 2nd Embodiment of this invention. 図5に示したLEDのうちの側面発光型LED装置の側面図。FIG. 6 is a side view of a side-emitting LED device among the LEDs shown in FIG. 5. 本発明の第3実施形態の照明装置に含まれる回路基板とLEDの断面図。Sectional drawing of the circuit board and LED contained in the illuminating device of 3rd Embodiment of this invention. 図7に示したLEDから最上層を剥離した状態の平面図。The top view of the state which peeled the uppermost layer from LED shown in FIG. 従来の電球型照明装置の全体構成を一部縦断面で示す正面図。The front view which shows a part of whole structure of the conventional light bulb type illuminating device in a longitudinal section.

以下、添付図1〜8を参照しながら本発明の好適な実施形態について詳細に説明する。なお図面の説明において、同一または相当要素には同一の符号を付し、重複する説明は省略する。また説明のため部材の縮尺は適宜変更している。さらに特許請求の範囲に記載した発明特定事項との関係をカッコ内に記載している。   Hereinafter, preferred embodiments of the present invention will be described in detail with reference to FIGS. In the description of the drawings, the same or equivalent elements will be denoted by the same reference numerals, and redundant description will be omitted. For the sake of explanation, the scale of the members is changed as appropriate. Furthermore, the relationship with the invention specific matter described in the claims is described in parentheses.

一般に照明装置に組み込まれる回路基板には、パッケージ状態のLEDを実装する場合と、ベアチップ状態のLEDを実装する場合とがある。パッケージ状態のLEDとは、ベアチップのLED素子にサブマウウント基板を取り付けたり、ベアチップのLED素子を樹脂などで被覆したりしたものである。そこで本明細書ではパッケージ状態のLEDをLED装置と呼び、ベアチップ状態のLEDをLEDダイと呼び区別する。さらに回路基板に実装したときに、配光分布が回路基板に対し垂直方向に強く現れるLED装置を表面実装型LED装置と呼び、配光分布が回路基板に対し水平方向に強く現れるLED装置を側面発光型LED装置と呼び区別する。なおLED装置に含まれるベアチップのLED素子もLEDダイと呼ぶ。
(第1実施形態)
In general, a packaged LED and a bare chip LED are mounted on a circuit board incorporated in a lighting device. The packaged LED is a LED in which a submount substrate is attached to a bare chip LED element, or a bare chip LED element is covered with a resin or the like. Therefore, in this specification, packaged LEDs are referred to as LED devices, and bare-chip LEDs are referred to as LED dies. Furthermore, when mounted on a circuit board, an LED device in which the light distribution distribution appears strongly in the vertical direction with respect to the circuit board is called a surface-mounted LED device. This is called a light-emitting LED device. A bare-chip LED element included in the LED device is also called an LED die.
(First embodiment)

図1〜4を用いて本発明の第1実施形態を説明する。先ず図1により本実施形態の照明装置である電球型LEDランプ40の全体構成を説明する。図1は電球型LEDランプ40の全体構成を一部縦断面で示す正面図である。外郭部材であるカバー46の上部には回路基板44が搭載されている。回路基板44の中央部には表面実装型LED装置42(LED)が実装され、回路基板44の周辺部には側面発光型LED装置43(LED)が実装されている。カバー46には空洞があり、この空洞内に点灯回路45が収納されている。またカバー46の周辺部でグローブ41が固定され、カバー46下部では口金47が連結している。カバー46は、これらの部材を支持するだけでなくLED(表面実装型LED装置42及び側面発光型LED装置43)の放熱に係わっており、熱伝導性の良い樹脂またはアルミニウムからなる。カバー46の上端部は断面が台形になっており、側面発光型LED装置43から放射される光が口金47側に向かい易くしている。   1st Embodiment of this invention is described using FIGS. First, an overall configuration of a light bulb type LED lamp 40 which is an illumination device of the present embodiment will be described with reference to FIG. FIG. 1 is a front view showing a part of the entire configuration of the bulb-type LED lamp 40 in a longitudinal section. A circuit board 44 is mounted on the upper portion of the cover 46 that is an outer member. A surface-mounted LED device 42 (LED) is mounted on the center portion of the circuit board 44, and a side-emitting LED device 43 (LED) is mounted on the peripheral portion of the circuit board 44. The cover 46 has a cavity, and the lighting circuit 45 is accommodated in the cavity. Further, the globe 41 is fixed at the periphery of the cover 46, and the base 47 is connected at the lower part of the cover 46. The cover 46 not only supports these members but is also involved in the heat dissipation of the LEDs (the surface-mounted LED device 42 and the side-emitting LED device 43), and is made of resin or aluminum having good thermal conductivity. The upper end portion of the cover 46 has a trapezoidal cross section so that the light emitted from the side-emitting LED device 43 can easily go to the base 47 side.

次に図2を用いて電球型LEDランプ40に含まれる回路基板44について説明する。図2は回路基板44の平面図である。回路基板44は円形であり、中央部に表面実装型LED装置42が実装され、周辺部に8個の側面発光型LED装置43が実装されている。表面実装型LED装置42には、サブマウント基板42aとダム材42b、被覆樹脂42cが見える。   Next, the circuit board 44 included in the light bulb type LED lamp 40 will be described with reference to FIG. FIG. 2 is a plan view of the circuit board 44. The circuit board 44 is circular, the surface-mounted LED device 42 is mounted at the center, and the eight side-emitting LED devices 43 are mounted at the periphery. In the surface mount LED device 42, the submount substrate 42a, the dam material 42b, and the coating resin 42c are visible.

次に図3と図4を用いて回路基板44に実装されたLEDについて説明する。図3は図2のAA線に沿って描いた回路基板44と、回路基板44上に実装された表面実装型LED装置42、側面発光型LED装置43の断面図であり、図4は側面発光型LED装置43の側面図である。回路基板44の両端(右端は図示していない)には側面発光型LED装置43が実装され、中央部には表面実装型LED装置42が実装されている。回路基板44はアルミベース上に絶縁膜を備えたアルミ基板であり、その上に配線電極36,37が形成されている。   Next, the LED mounted on the circuit board 44 will be described with reference to FIGS. 3 is a cross-sectional view of the circuit board 44 drawn along the line AA in FIG. 2, the surface-mounted LED device 42 and the side-emitting LED device 43 mounted on the circuit board 44, and FIG. FIG. Side-emitting LED devices 43 are mounted on both ends (the right end is not shown) of the circuit board 44, and a surface-mounted LED device 42 is mounted in the center. The circuit board 44 is an aluminum board provided with an insulating film on an aluminum base, and wiring electrodes 36 and 37 are formed thereon.

まず側面発光型LED装置43について説明する。側面発光型LED装置43は、回路基板44に対し垂直なサブマウント基板43aと、底面及び上面、側面を囲む枠状の反射樹脂43bと、サブマウント基板43aに実装されたLEDダイ43eと、LEDダイ43eを被覆する被覆樹脂43cからなる。LEDダイ43eはサブマウント基板43aにダイボンディングされ、ワイヤ43dによりサブマウント基板43aの電極(図示せず)と電気的に接続している。被覆樹脂43cはシリコーン樹脂であり蛍光体を含有している。また側面発光型LED装置43は回路基板44上の配線電極36と半田35で接続する。なお側面発光型LED装置43の光出射面からは、図4に示されるように枠状の反射樹
脂43bとその内側にある被覆樹脂43cが見える。
First, the side-emitting LED device 43 will be described. The side-emitting LED device 43 includes a submount substrate 43a that is perpendicular to the circuit board 44, a frame-like reflective resin 43b that surrounds the bottom surface, the top surface, and the side surface, an LED die 43e mounted on the submount substrate 43a, an LED It consists of a coating resin 43c that covers the die 43e. The LED die 43e is die-bonded to the submount substrate 43a and is electrically connected to an electrode (not shown) of the submount substrate 43a by a wire 43d. The coating resin 43c is a silicone resin and contains a phosphor. The side-emitting LED device 43 is connected to the wiring electrode 36 on the circuit board 44 by the solder 35. From the light emitting surface of the side-emitting LED device 43, as shown in FIG. 4, a frame-like reflective resin 43b and a coating resin 43c inside the frame-like reflective resin 43b can be seen.

次に表面実装型LED装置42について説明する。図3に示すように表面実装型LED装置42は、サブマウント基板42aと、ダム材42bと、被覆樹脂42cと、複数のLEDダイ42f,42gを含んでいる。サブマウント基板42a上に形成されたダム材42bの内側の領域では、LEDダイ42f,42gがサブマウント基板42aにダイボンディングされ、蛍光体を含有する被覆樹脂42cにより被覆されている。なおダム材42bの内側の領域には多数のLEDダイが実装されているが、説明のためLEDダイ42f,42gだけを示している。ワイヤ42dによりLEDダイ42fとサブマウント基板42a上の電極(図示せず)が電気的に接続し、ワイヤ42eによりLEDダイ42fとLEDダイ42gが直列接続する。表面実装型LED装置42は回路基板44の中央部に搭載される。   Next, the surface mount type LED device 42 will be described. As shown in FIG. 3, the surface mount LED device 42 includes a submount substrate 42a, a dam material 42b, a coating resin 42c, and a plurality of LED dies 42f and 42g. In the area inside the dam material 42b formed on the submount substrate 42a, the LED dies 42f and 42g are die-bonded to the submount substrate 42a and covered with a coating resin 42c containing a phosphor. In addition, although many LED dies are mounted in the area | region inside the dam material 42b, only LED dies 42f and 42g are shown for description. The LED die 42f and an electrode (not shown) on the submount substrate 42a are electrically connected by the wire 42d, and the LED die 42f and the LED die 42g are connected in series by the wire 42e. The surface mount type LED device 42 is mounted at the center of the circuit board 44.

表面実装型LED装置42が回路基板44に対し垂直方向に強い配光分布を持ち、側面発光型LED装置43が回路基板44に対し水平方向に強い配光分布を持つ。この結果、電球型ランプ40(図1参照)は口金47(図1参照)方向にも配光分布が広がる。このとき回路基板44上には表面実装型LED装置42と側面発光型LED装置43だけしか実装されてないので、グローブ41(図1参照)内が平面的な構造になっている。なお回路基板44には表面実装型LED装置42が1個だけ実装されていたが、明るさを増す必要がある場合は表面実装型LED装置42を複数実装すれば良い。
(第2実施形態)
The surface-mounted LED device 42 has a strong light distribution in the vertical direction with respect to the circuit board 44, and the side-emitting LED device 43 has a strong light distribution in the horizontal direction with respect to the circuit board 44. As a result, the light distribution of the light bulb-type lamp 40 (see FIG. 1) also extends in the direction of the cap 47 (see FIG. 1). At this time, since only the surface-mounted LED device 42 and the side-emitting LED device 43 are mounted on the circuit board 44, the inside of the globe 41 (see FIG. 1) has a planar structure. Although only one surface-mounted LED device 42 is mounted on the circuit board 44, a plurality of surface-mounted LED devices 42 may be mounted when the brightness needs to be increased.
(Second Embodiment)

第1実施形態の照明装置(電球型LEDランプ40)に含まれる回路基板44では、回路基板44の垂直方向の配光を担うLEDは表面実装型LED装置42であった。しかしながら回路基板44の垂直方向の配光を担うLEDにはベアチップであるLEDダイを使っても良い。また回路基板44に実装された側面発光型LED装置43は反射樹脂43b(図3参照)が枠状であるため水平方向より下側の配光分布が充分でないことがある。そこで図5と図6により、回路基板にLEDダイを直接実装し、さらに回路基板の水平方向より下側の配光分布を改善したものとして、本発明の第2実施形態について説明する。なお本実施形態における照明装置の外観は図1に示した電球型LEDランプ40と等しい。   In the circuit board 44 included in the illumination device (bulb-type LED lamp 40) of the first embodiment, the LED responsible for the light distribution in the vertical direction of the circuit board 44 is the surface-mounted LED device 42. However, an LED die, which is a bare chip, may be used as the LED that handles light distribution in the vertical direction of the circuit board 44. Further, in the side-emitting LED device 43 mounted on the circuit board 44, the light distribution distribution below the horizontal direction may not be sufficient because the reflective resin 43b (see FIG. 3) has a frame shape. Therefore, referring to FIGS. 5 and 6, a second embodiment of the present invention will be described on the assumption that the LED die is directly mounted on the circuit board and the light distribution below the horizontal direction of the circuit board is improved. In addition, the external appearance of the illuminating device in this embodiment is equal to the light bulb type LED lamp 40 shown in FIG.

図5は、本実施形態の照明装置に含まれる回路基板54と、回路基板54に実装されたLEDダイ53f,53g、側面発光型LED装置53の断面図であり、図6は側面発光型LED装置53の側面図である。回路基板54の両端(右端は図示していない)には側面発光型LED装置53が実装され、回路基板54の中央部にはLEDダイ52f,52gが実装されている。なお回路基板54の中央部には多数のLEDダイが実装されているが、説明のためLEDダイ52f,52gだけを示している。回路基板54はアルミベース上に絶縁膜を備えたアルミ基板であり、その上に配線電極56,57,58が形成されている。回路基板54の平面形状は一部に切り欠きがある円形であり、ダム材52bは回路基板54と同心円になる。   FIG. 5 is a cross-sectional view of the circuit board 54, the LED dies 53f and 53g, and the side-emitting LED device 53 mounted on the circuit board 54 included in the lighting device of this embodiment, and FIG. 6 is a side-emitting LED. 4 is a side view of the device 53. FIG. Side emission type LED devices 53 are mounted on both ends (the right end is not shown) of the circuit board 54, and LED dies 52 f and 52 g are mounted on the center of the circuit board 54. Although a large number of LED dies are mounted in the center of the circuit board 54, only the LED dies 52f and 52g are shown for explanation. The circuit board 54 is an aluminum board provided with an insulating film on an aluminum base, and wiring electrodes 56, 57 and 58 are formed thereon. The planar shape of the circuit board 54 is a circular shape with a notch in part, and the dam material 52 b is concentric with the circuit board 54.

まず側面発光型LED装置53及びその周辺の回路基板54について説明する。側面発光型LED装置53は、回路基板54に対し垂直なサブマウント基板53aと、上面及び側面を覆う反射樹脂53bと、サブマウント基板53aに実装されたLEDダイ53eと、LEDダイ53eを被覆する被覆樹脂53cからなる。LEDダイ53eはサブマウント基板53aにダイボンディングされ、ワイヤ53dによりサブマウント基板53aの電極(図示せず)と電気的に接続している。被覆樹脂53cはシリコーン樹脂であり蛍光体を含有している。また側面発光型LED装置53は回路基板54上の配線電極56と半田55で接続する。なお側面発光型LED装置53の光出射面からは、図6に示されるように、下側が開いたコの字形の反射樹脂53bとその内側の被覆樹脂53cが見える。   First, the side-emitting LED device 53 and the peripheral circuit board 54 will be described. The side-emitting LED device 53 covers a submount substrate 53a that is perpendicular to the circuit board 54, a reflective resin 53b that covers the top and side surfaces, an LED die 53e that is mounted on the submount substrate 53a, and the LED die 53e. It consists of coating resin 53c. The LED die 53e is die-bonded to the submount substrate 53a and is electrically connected to an electrode (not shown) of the submount substrate 53a by a wire 53d. The coating resin 53c is a silicone resin and contains a phosphor. The side-emitting LED device 53 is connected to the wiring electrode 56 on the circuit board 54 with solder 55. From the light emitting surface of the side-emitting LED device 53, as shown in FIG. 6, a U-shaped reflective resin 53b having an open lower side and a coating resin 53c on the inside thereof can be seen.

回路基板54は、前述したように図2の回路基板44と同様に円形を基本としているが、側面発光型LED装置53の下側を切り欠いている。図3では点線により回路基板54の切り欠き部59を示している。側面発光型LED装置53は、底部に反射樹脂がないこと及び回路基板54に切り欠き部59があることにより、口金47(図1参照)方向に配光分布を広げている。   As described above, the circuit board 54 is basically circular like the circuit board 44 of FIG. 2, but the lower side of the side-emitting LED device 53 is notched. In FIG. 3, the notch 59 of the circuit board 54 is indicated by a dotted line. The side-emitting LED device 53 spreads the light distribution in the direction of the base 47 (see FIG. 1) due to the absence of reflective resin at the bottom and the notch 59 in the circuit board 54.

次にLED装置52f、52gについて説明する。図5に示すように回路基板54の中央部にはダム材52bで囲まれた領域があり、この領域においてLED装置52f、52gが配線電極58上にダイボンディングされ、蛍光体を含有する被覆樹脂52cにより被覆されている。ワイヤ52dによりLEDダイ52fと配線電極57が電気的に接続し、ワイヤ52eによりLEDダイ52fとLEDダイ52gが直列接続している。
(第3実施形態)
Next, the LED devices 52f and 52g will be described. As shown in FIG. 5, there is a region surrounded by a dam material 52b at the center of the circuit board 54. In this region, the LED devices 52f and 52g are die-bonded on the wiring electrode 58, and a coating resin containing a phosphor. 52c. The LED die 52f and the wiring electrode 57 are electrically connected by the wire 52d, and the LED die 52f and the LED die 52g are connected in series by the wire 52e.
(Third embodiment)

第1実施形態及び第2実施形態に含まれる表面実装型LED装置42及び側面発光型LED装置43,53は、サブマウント基板42a,43a,53aを備えていた。これに対しサブマウント基板を省いてLED装置の構造を簡単化しても良い。そこで図7と図8によりサブマウント基板を省いて構造を簡単化したLED装置を用いた例として本発明の第3実施形態を説明する。なお本実施形態における照明装置の外観は図1に示した電球型LEDランプ40と等しい。   The surface-mounted LED device 42 and the side-emitting LED devices 43 and 53 included in the first embodiment and the second embodiment were provided with submount substrates 42a, 43a, and 53a. On the other hand, the structure of the LED device may be simplified by omitting the submount substrate. Therefore, a third embodiment of the present invention will be described as an example using an LED device in which the submount substrate is omitted and the structure is simplified with reference to FIGS. In addition, the external appearance of the illuminating device in this embodiment is equal to the light bulb type LED lamp 40 shown in FIG.

図7は、第3実施形態の照明装置に含まれる回路基板74と、回路基板74に実装された側面発光型LED装置73及び表面実装型LED装置72の断面図であり、図8は、(a)が側面発光型LED装置73から上面反射層73aを剥がした状態の平面図、(b)が表面実装型LED装置72の上面蛍光体層72aを剥がした状態の平面図である。回路基板74の両端(右端は図示していない)には側面発光型LED装置73が実装され、回路基板74の中央部には表面実装型LED装置72が実装されている。なお回路基板74の中央部には多数の表面実装型LED装置72が実装されているが、説明のため2個だけ示している。回路基板74はアルミベース上に絶縁膜を備えたアルミ基板であり、その上に配線電極75,76が形成されている。回路基板74の平面形状は図2の回路基板44と同様に円形である。回路基板44と回路基板74を比較すると、回路基板44における表面実装型LED装置42が回路基板74では多数の表面実装型LED装置72の置き換わり、同様に側面発光型LED装置43が側面発光型LED装置73に置き換わる。   FIG. 7 is a cross-sectional view of the circuit board 74 included in the lighting device of the third embodiment, the side-emitting LED device 73 and the surface-mounted LED device 72 mounted on the circuit board 74, and FIG. FIG. 5A is a plan view of a state in which an upper surface reflective layer 73a is peeled off from a side-emitting LED device 73, and FIG. 5B is a plan view of a state in which the upper surface phosphor layer 72a of the surface mount LED device 72 is removed. A side-emitting LED device 73 is mounted on both ends of the circuit board 74 (the right end is not shown), and a surface-mounted LED device 72 is mounted on the center of the circuit board 74. In addition, although many surface mount type LED devices 72 are mounted in the center part of the circuit board 74, only two are shown for description. The circuit board 74 is an aluminum board provided with an insulating film on an aluminum base, and wiring electrodes 75 and 76 are formed thereon. The planar shape of the circuit board 74 is circular like the circuit board 44 of FIG. Comparing the circuit board 44 and the circuit board 74, the surface-mounted LED device 42 on the circuit board 44 is replaced with a number of surface-mounted LED devices 72 on the circuit board 74, and similarly, the side-emitting LED device 43 is replaced by the side-emitting LED device 43. Replaced by device 73.

まず回路基板74の左端に実装された側面発光型LED装置73について説明する。側面発光型LED装置73に含まれるLEDダイ73cは、上面及び側面にそれぞれ上面反射層73a及び側面蛍光部材73bを備え、底面に2個の接続用電極73dが付着している。図8(a)に示されるように側面蛍光部材73bはLEDダイ73cの周囲を枠状に取り囲んでいる。また接続用電極73dは回路基板74の配線電極75と接続している。なおLEDダイ73cは厚さが80〜120μm程度のサファイア基板(図示せず)の下面に、厚さが10μm弱の半導体層(図示せず)を備えている。上面反射層73aはシリコーン樹脂に酸化チタンやアルミナなどの反射性微粒子を混練し硬化させたものである。   First, the side-emitting LED device 73 mounted on the left end of the circuit board 74 will be described. The LED die 73c included in the side light emitting LED device 73 includes an upper surface reflection layer 73a and a side surface fluorescent member 73b on the upper surface and the side surface, respectively, and two connection electrodes 73d are attached to the bottom surface. As shown in FIG. 8A, the side fluorescent member 73b surrounds the LED die 73c in a frame shape. The connection electrode 73d is connected to the wiring electrode 75 of the circuit board 74. The LED die 73c includes a semiconductor layer (not shown) having a thickness of less than 10 μm on the lower surface of a sapphire substrate (not shown) having a thickness of about 80 to 120 μm. The upper reflective layer 73a is obtained by kneading and curing reflective fine particles such as titanium oxide and alumina in a silicone resin.

側面発光型LED装置73においてLEDダイ73cに含まれる半導体層が発光すると、発光はサファイア基板側に入射する(なお半導体層の下部には金属反射層がある)。サファイア基板に入射した光はLEDダイ73cの上面反射層73aによりサファイア基板の側面から出射する。サファイア基板の側面から出射した光は側面蛍光部材73bで白色化され、回路基板74の水平方向を中心に光を放射する。   When the semiconductor layer included in the LED die 73c emits light in the side-emitting LED device 73, the light is incident on the sapphire substrate side (note that there is a metal reflective layer below the semiconductor layer). The light incident on the sapphire substrate is emitted from the side surface of the sapphire substrate by the upper surface reflection layer 73a of the LED die 73c. The light emitted from the side surface of the sapphire substrate is whitened by the side fluorescent member 73 b and radiates light around the horizontal direction of the circuit board 74.

次に回路基板74の中央部に実装された表面実装型LED装置72について説明する。
表面実装型LED装置72に含まれるLEDダイ72cは、上面及び側面にそれぞれ上面蛍光体層72a及び側面反射部材72bを備え、底面に2個の接続用電極72dが付着している。図8(b)に示されるように側面反射部材72bはLEDダイ72cの周囲を枠状に取り囲んでいる。また接続用電極72dは回路基板74の配線電極76と接続している。なおLEDダイ72cはLEDダイ73cと同様に厚さが80〜120μm程度のサファイア基板(図示せず)の下面に、厚さが10μm弱の半導体層(図示せず)を備えている。側面反射部材72bはシリコーン樹脂に酸化チタンやアルミナなどの反射性微粒子を混練し硬化させたものである。
Next, the surface mount type LED device 72 mounted on the center of the circuit board 74 will be described.
The LED die 72c included in the surface-mounted LED device 72 includes an upper surface phosphor layer 72a and a side surface reflecting member 72b on the upper surface and side surfaces, respectively, and two connection electrodes 72d are attached to the bottom surface. As shown in FIG. 8B, the side reflecting member 72b surrounds the LED die 72c in a frame shape. The connection electrode 72 d is connected to the wiring electrode 76 of the circuit board 74. The LED die 72c includes a semiconductor layer (not shown) having a thickness of less than 10 μm on the lower surface of a sapphire substrate (not shown) having a thickness of about 80 to 120 μm, like the LED die 73c. The side reflecting member 72b is obtained by kneading and curing reflective fine particles such as titanium oxide and alumina in a silicone resin.

表面実装型LED装置72ではLEDダイ72cに含まれる半導体層が発光すると、発光はサファイア基板側に入射する(なお半導体層の下部には金属反射層がある)。サファイア基板に入射した光はLEDダイ72cの側面反射部材72bが一助となり、ほとんど全てサファイア基板の上面から出射する。サファイア基板の上面から出射した光は上面蛍光体層72aで白色化され、回路基板74の垂直方向を中心に光を放射する。   In the surface-mounted LED device 72, when the semiconductor layer included in the LED die 72c emits light, the light is incident on the sapphire substrate side (note that there is a metal reflective layer below the semiconductor layer). The light incident on the sapphire substrate is assisted by the side reflecting member 72b of the LED die 72c, and almost all is emitted from the upper surface of the sapphire substrate. The light emitted from the upper surface of the sapphire substrate is whitened by the upper surface phosphor layer 72 a and radiates light around the vertical direction of the circuit substrate 74.

以上のように本実施形態の照明装置は、側面発光型LED装置73と表面実装型LED装置72がそれぞれ回路基板74の水平方向と垂直方向に光を放射するため広い配光分布が得られる。また本実施形態では側面発光型LED装置73と表面実装型LED装置72は構造が簡単であるというばかりでなく、回路基板74に実装する際、一括実装が使え工程が簡単化する。   As described above, the illumination device of the present embodiment provides a wide light distribution because the side-emitting LED device 73 and the surface-mounted LED device 72 emit light in the horizontal and vertical directions of the circuit board 74, respectively. In this embodiment, the side-emitting LED device 73 and the surface-mounted LED device 72 are not only simple in structure, but can be packaged when mounted on the circuit board 74 and the process is simplified.

たとえば以下のような工程になる。先ず粘着シートに側面発光型LED装置73と表面実装型LED装置72を貼り付ける。このとき配列ピッチは回路基板74の実装ピッチにあわせておく。これと並行して回路基板74の実装部に半田ペースト印刷する。側面発光型LED装置73と表面実装型LED装置72を実装した粘着シートと回路基板74を重ねあわせ、リフロー炉に通すことで側面発光型LED装置73と表面実装型LED装置72が回路基板74と接続する。   For example, the process is as follows. First, the side-emitting LED device 73 and the surface-mounted LED device 72 are attached to the adhesive sheet. At this time, the arrangement pitch is matched with the mounting pitch of the circuit board 74. In parallel with this, the solder paste is printed on the mounting portion of the circuit board 74. The adhesive sheet on which the side-emitting LED device 73 and the surface-mounted LED device 72 are mounted and the circuit board 74 are overlapped and passed through a reflow furnace, whereby the side-emitting LED device 73 and the surface-mounted LED device 72 are connected to the circuit board 74. Connecting.

35,55…半田、
36,37,56、57,58,75,76…配線電極、
40…電球型LEDランプ(照明装置)、
41…グローブ、
42,72…表面実装型LED装置(LED)、
42a,43a,53a…サブマウント基板、
42b,52b…ダム材、
42c,43c,52c,53c…被覆樹脂、
42d,42d、43d,52d,52e,53d…ワイヤ、
42f,42g、43e,53e,72c,73c…LEDダイ、
43,53,73…側面発光型LED装置(LED)、
43b,53b…反射樹脂、
44,54,74…回路基板、
45…点灯回路、
46…カバー、
47…口金、
52f,52g…LEDダイ(LED)、
59…きり欠き部、
72a…上面蛍光体層、
72b…側面反射部材、
72d,73d…接続用電極、
73a…上面反射層、
73b…側面蛍光部材。
35, 55 ... solder,
36, 37, 56, 57, 58, 75, 76 ... wiring electrodes,
40 ... Light bulb type LED lamp (lighting device),
41 ... Glove,
42, 72 ... surface mount LED device (LED),
42a, 43a, 53a ... submount substrate,
42b, 52b ... dam materials,
42c, 43c, 52c, 53c ... coating resin,
42d, 42d, 43d, 52d, 52e, 53d ... wire,
42f, 42g, 43e, 53e, 72c, 73c ... LED die,
43, 53, 73 ... Side-emitting LED device (LED),
43b, 53b ... reflective resin,
44, 54, 74 ... circuit boards,
45 ... lighting circuit,
46 ... cover,
47 ...
52f, 52g ... LED die (LED),
59 ... notches,
72a ... upper surface phosphor layer,
72b ... side reflection member,
72d, 73d ... connection electrodes,
73a ... top reflective layer,
73b: Side fluorescent member.

Claims (7)

光源となるLEDを実装した回路基板を備える電球型の照明装置において、
前記複数のLEDのうち前記回路基板の中央部に実装する前記LEDがベアチップのLEDダイであるか、又は表面実装型LED装置であり、
前記回路基板周辺部に実装する前記LEDが側面発光型LED装置である
ことを特徴とする照明装置。
In a bulb-type lighting device including a circuit board on which an LED serving as a light source is mounted,
Of the plurality of LEDs, the LED mounted on the center of the circuit board is a bare-chip LED die, or a surface-mounted LED device,
The lighting device, wherein the LED mounted on the periphery of the circuit board is a side-emitting LED device.
前記側面発光型LED装置が、前記回路基板に対し垂直なサブマウント基板と、底面及び上面、側面を囲む枠状の反射樹脂と、前記サブマウント基板に実装されたLEDダイと、該LEDダイを被覆する被覆樹脂とを備えていることを特徴とする請求項1に記載の照明装置。   The side-emitting LED device includes a submount substrate perpendicular to the circuit board, a frame-like reflective resin surrounding the bottom surface, the top surface, and the side surface, an LED die mounted on the submount substrate, and the LED die. The lighting device according to claim 1, further comprising a coating resin to be coated. 前記側面発光型LED装置は、前記回路基板に対し垂直なサブマウント基板と、上面及側面を覆う反射樹脂と、前記サブマウント基板に実装されたLEDダイと、該LEDダイを被覆する被覆樹脂とを備えていることを特徴とする請求項1に記載の照明装置。   The side-emitting LED device includes a submount substrate that is perpendicular to the circuit board, a reflective resin that covers an upper surface and a side surface, an LED die that is mounted on the submount substrate, and a coating resin that covers the LED die. The illuminating device according to claim 1, comprising: 前記回路基板が前記側面発光型LED装置の実装部に切り欠き部があることを特徴とする請求項1から3のいずれか一項に記載の照明装置。   The lighting device according to any one of claims 1 to 3, wherein the circuit board has a notch in a mounting portion of the side-emitting LED device. 前記被覆樹脂が蛍光体を含有していることを特徴とする請求項1〜4のいずれか一項に記載の照明装置。   The lighting device according to claim 1, wherein the coating resin contains a phosphor. 前記側面発光型LED装置に含まれるLEDダイが、上面及び側面にそれぞれ上面反射層及び側面蛍光部材を備え、底面に接続用電極が付着し、該接続用電極が前記回路基板の配線電極と接続していることを特徴とする請求項1〜5のいずれか一項に記載の照明装置。   The LED die included in the side-emitting LED device includes an upper surface reflection layer and a side surface fluorescent member on the upper surface and the side surface, and a connection electrode is attached to the bottom surface, and the connection electrode is connected to the wiring electrode of the circuit board. The lighting device according to any one of claims 1 to 5, wherein 前記表面実装型LED装置に含まれるLEDダイは、上面及び側面がそれぞれ上面蛍光体層及び側面反射部材で被覆され、底面に接続用電極が付着し、該接続用電極が前記回路基板の配線電極と接続していることを特徴とする請求項1〜6のいずれか一項に記載の照明装置。
The LED die included in the surface-mounted LED device has an upper surface and side surfaces coated with an upper surface phosphor layer and a side surface reflecting member, a connection electrode is attached to the bottom surface, and the connection electrode is a wiring electrode of the circuit board The lighting device according to claim 1, wherein the lighting device is connected to the lighting device.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019009449A (en) * 2016-06-30 2019-01-17 日亜化学工業株式会社 LED module
US10641437B2 (en) 2016-06-30 2020-05-05 Nichia Corporation LED module

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010282754A (en) * 2009-06-02 2010-12-16 Panasonic Corp Bulb type lighting device
JP2011096594A (en) * 2009-11-02 2011-05-12 Genelite Inc Bulb type led lamp
US20120032577A1 (en) * 2010-08-05 2012-02-09 David Huang Led lighting device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010282754A (en) * 2009-06-02 2010-12-16 Panasonic Corp Bulb type lighting device
JP2011096594A (en) * 2009-11-02 2011-05-12 Genelite Inc Bulb type led lamp
US20120032577A1 (en) * 2010-08-05 2012-02-09 David Huang Led lighting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019009449A (en) * 2016-06-30 2019-01-17 日亜化学工業株式会社 LED module
US10641437B2 (en) 2016-06-30 2020-05-05 Nichia Corporation LED module

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