JP2013179503A - Piezoelectric device and manufacturing method of the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a piezoelectric device which reduces short circuits caused by contact between conductive adhesives provided at a pair of electrode pads and improves the productivity, and to provide a manufacturing method of the piezoelectric device.SOLUTION: A piezoelectric device of this invention includes a package 110 where a pair of electrode pads 111 are provided on an upper surface; a pair of conductive joining members 140 provided so as to correspond to the pair of electrode pads 111; and a crystal element 120 supported on the pair of conductive joining members 140 through a conductive adhesive DS. The conductive adhesive DS is provided so as to range from an area on each conductive joining member 140 to a side surface of the conductive joining member 140 and be spaced away from the upper surface of the package 110.

Description

  The present invention relates to a piezoelectric device used in, for example, an electronic device and a manufacturing method thereof.

  A conventional crystal device has been proposed in which a conductive adhesive is provided on each of a pair of electrode pads provided on a substrate portion of a package, and a crystal element is bonded via the conductive adhesive. (For example, refer to Patent Document 1 below). In addition, the manufacturing method of such a crystal device includes a step in which a conductive adhesive is provided on a pair of electrode pads provided on a substrate portion, and a crystal element is placed on and bonded to the conductive adhesive. .

JP 2002-111435 A

  In conventional piezoelectric devices, a conductive adhesive is provided only on a pair of electrode pads, and a crystal element is placed on and bonded to the conductive adhesive. However, a miniaturized piezoelectric device is provided in a package. The space between the pair of electrode pads is becoming narrower. Therefore, in the miniaturized piezoelectric device, when the crystal element is placed on the conductive adhesive provided on the pair of electrode pads, the conductive adhesive is crushed and leaked, and provided on the pair of electrode pads. There is a possibility that the conductive adhesives come into contact with each other and short-circuit.

  The present invention has been made in view of the above problems, and provides a piezoelectric device and a method for manufacturing the same, in which short circuiting caused by contact between conductive adhesives provided on a pair of electrode pads is reduced, and productivity is improved. The purpose is to provide.

  A piezoelectric device according to one aspect of the present invention includes a package having a pair of electrode pads on the upper surface, a pair of conductive bonding members provided corresponding to the pair of electrode pads, and a pair of conductive bonding members. And a quartz crystal element supported via a conductive adhesive, and the conductive adhesive is provided from the conductive bonding member to the side surface of the conductive bonding member and spaced from the upper surface of the package. Is.

  The piezoelectric device according to one aspect of the present invention is provided from the conductive bonding member to the side surface of the conductive bonding member, and has a conductive adhesive provided between the upper surface of the package. Since the distance is increased by the vertical thickness of the inner side surface of the joining member, adjacent conductive adhesives do not come into contact with each other, and a short circuit between adjacent conductive adhesives can be reduced.

It is a disassembled perspective view which shows the piezoelectric device in this embodiment. (A) is sectional drawing in AA of the piezoelectric device shown by FIG. 1, (b) is sectional drawing in BB of the piezoelectric device shown by FIG. FIG. 3 is a partial enlarged view showing a C portion of the piezoelectric device shown in FIG. 2. It is a top view of the package which shows the state which removed the cover of the crystal device in this embodiment. (A) is sectional drawing which shows the process of mounting a crystal element on the electroconductive joining member of the manufacturing method of the piezoelectric device in this embodiment, (b) is the electroconductivity of the manufacturing method of the piezoelectric device in this embodiment. It is sectional drawing which shows the process of joining a crystal element to a conductive joining member, (c) is sectional drawing which shows the process of cut | disconnecting a conductive joining member from the assembly conductive joining member of the manufacturing method of the piezoelectric device in this embodiment. It is. (A) is sectional drawing which shows the process of making a pair of electrode pad and a pair of electroconductive joining member contact | abut of the manufacturing method of the piezoelectric device in this embodiment, (b) is a piezoelectric device in this embodiment. It is sectional drawing which shows the process of joining a pair of electrode pad and a pair of electroconductive joining member of this manufacturing method. It is a perspective view which shows the collective conductive joining member of the piezoelectric device in this embodiment.

  In addition, the piezoelectric device in this embodiment is demonstrated with reference to FIG.1 and FIG.2. A method for manufacturing a piezoelectric device according to the present embodiment will be described with reference to FIGS.

  As shown in FIGS. 1 and 2, the piezoelectric device includes a package 110, a conductive bonding member 140 bonded to the package 110, and a crystal element 120 bonded to the conductive bonding member 140. Yes.

  As shown in FIGS. 1 and 2, the package 110 includes a substrate portion 110a and a frame portion 110b provided on the substrate portion 110a. The package 110 has a recess K surrounded by the substrate part 110a and the frame part 110b.

  The substrate part 110a functions as a support member for supporting the conductive bonding member 140 to which the crystal element 120 is bonded on the upper surface, and a pair of electrodes for bonding the conductive bonding member 140 on the upper surface. A pad 111 is provided. In addition, external connection electrode terminals G are provided at the four corners of the lower surface of the substrate portion 110a. Further, the length between the pair of electrode pads 111 parallel to the short side direction of the substrate portion 110a is, for example, 100 to 150 μm.

  The substrate part 110a is formed by laminating one or more insulating layers made of a ceramic material such as alumina ceramics or glass-ceramics. A wiring pattern (not shown) and a via conductor (not shown) for electrically connecting the electrode pad 111 on the upper surface of the substrate part 110a and the external connection electrode terminal G on the lower surface of the substrate part 110a. Z).

  The frame portion 110b is for forming the recess K on the substrate portion 110a. The frame part 110b is made of, for example, a ceramic material of alumina ceramics or glass-ceramics, and is formed integrally with the substrate part 110a. A sealing conductor pattern 112 is provided on the upper surface of the frame portion 110b.

  The sealing conductor pattern 112 plays a role of improving the wettability of the sealing member 131 when it is bonded to the lid 130 via the sealing member 131. Further, the sealing conductor pattern 112 is connected to at least one external connection electrode terminal G by a via conductor (not shown) and a wiring pattern (not shown) formed in the substrate portion 110a. The at least one external connection electrode terminal G serves as a ground terminal by being connected to a mounting pad connected to the ground on the mounting substrate. Therefore, the lid 130 joined to the sealing conductor pattern 112 is connected to the ground, and the shielding performance in the recess K by the lid 130 is improved.

  The conductive bonding member 140 functions as a support member for supporting the crystal element 120 and the like. The conductive bonding member 140 is formed to have a step on the upper surface. The conductive bonding member 140 is made of a conductive metal such as copper or aluminum, or an alloy containing at least one of iron, nickel, and cobalt.

  As shown in FIG. 4, the conductive bonding member 140 includes a first flat plate portion 141 and a second flat plate portion 142 provided on the first flat plate portion 141 so as to be smaller than the first flat plate portion 141 in plan view. It is composed of As shown in FIG. 2, the conductive bonding member 140 is bonded to the electrode pad 111 on the lower surface of the first flat plate portion 141 and is bonded to the crystal element 120 on the upper surface of the second flat plate portion 142. . The length of the first flat plate portion 141 parallel to the long side direction of the substrate portion 110a is about 150 to 250 μm, and the length of the first flat plate portion 141 parallel to the short side direction of the substrate portion 110a is About 150 to 250 μm. The vertical length of the first flat plate portion 141 is about 50 to 100 μm. The length of the second flat plate portion 142 that is parallel to the long side direction of the substrate portion 110a is about 75 to 125 μm, and the length of the second flat plate portion 142 that is parallel to the short side direction of the substrate portion 110a is About 150 to 250 μm. Moreover, the length of the up-down direction of the 1st flat plate part 142 is about 50-100 micrometers. Further, the length of the conductive bonding member 150 in the vertical direction is about 100 to 200 μm.

  As shown in FIG. 2, the crystal element 120 is bonded onto the second flat plate portion 142 of the conductive bonding member 140 via the conductive adhesive DS. The crystal element 120 plays a role of oscillating a reference signal of an electronic device or the like by stable mechanical vibration and a piezoelectric effect.

  The crystal element 120 has a structure in which an excitation electrode 122, a connection electrode 123, and an extraction electrode 124 are attached to an upper surface and a lower surface of a rectangular crystal base plate 121, respectively. The crystal element 120 is bonded to the upper surface of the second flat plate portion 142 of the conductive bonding member 140 via the conductive adhesive DS. In the present embodiment, the crystal element 120 is on the second flat plate portion 142 of the conductive bonding member 140 in a one-side holding structure in which one end side in the long side direction of the crystal element 120 is a fixed end and the other end side is a free end. It is fixed to.

  Here, the operation of the crystal element 120 will be described. When an alternating voltage from the outside is applied to the crystal element plate 121 from the connection electrode 123 via the extraction electrode 124 and the excitation electrode 122, the crystal element 120 is excited in a predetermined vibration mode and frequency. Is supposed to wake up.

  Here, a manufacturing method of the crystal element 120 will be described. First, a quartz base plate 121 is obtained by cutting an artificial crystalline lens at a predetermined cut angle and performing external processing. Then, the crystal element 120 is formed by forming the excitation electrode 122, the connection electrode 123, and the extraction electrode 124 by depositing a metal film on both main surfaces of the crystal base plate 121 by a conventionally known sputtering technique or the like. Produced.

  A method for bonding the crystal element 120 to the conductive bonding member 140 will be described. First, the conductive adhesive is applied by, for example, a dispenser so as to extend from the second flat plate portion 142 to the first flat plate portion 142. Then, the crystal element 120 is conveyed onto the conductive adhesive DS provided on the second flat plate portion 142 of the conductive bonding member 140. Further, the crystal element 120 is placed on the conductive adhesive DS. The crystal element 120 is bonded to the conductive bonding member 140 by heating and curing the conductive adhesive DS.

  Further, as shown in FIG. 2, the conductive adhesive DS is provided from the conductive bonding member 140 to the side surface of the conductive bonding member 140 so as to be spaced from the upper surface of the substrate part 110 a of the package 110. ing. If the crystal element 120 is provided on the pair of electrode pads 111 via the conductive adhesive DS without using the conductive bonding member 140, the conductive adhesive is provided between the pair of electrode pads 111. When the DS is crushed and leaked, adjacent conductive adhesives come into contact with each other and short circuit. Therefore, the conductive adhesive DS is provided from the conductive bonding member 140 to the side surface of the conductive bonding member 140 so as to be spaced from the upper surface of the substrate portion 110a of the package 110, so that the vertical direction of the conductive bonding member 140 is provided. Therefore, even if the conductive adhesive DS is crushed and leaked and spread, it stops at the side surface of the conductive bonding member 140. Therefore, it can reduce that adjacent conductive adhesive contacts and short-circuits in the area | region D between a pair of conductive joining members 140. FIG.

  As shown in FIG. 3, the conductive adhesive DS is provided from the first flat plate portion 141 to the second flat plate portion 142. By doing so, when the conductive adhesive DS is cured and contracted, the fixed end side of the crystal element 120 is pulled downward by the contracted conductive adhesive DS. It becomes easy to leave | separate from the board | substrate part 110a. Therefore, it can prevent that the front-end | tip part of the crystal element 120 contacts the board | substrate part 110a in the recessed part K of the package 110. FIG.

  Further, the short side outer edge portion on the fixed end side of the crystal element 120 may be opposed to the upper surface of the first flat plate portion 141 as shown in FIG. Thus, when the conductive adhesive DS is cured and contracted, the fixed end side of the crystal element 120 is further pulled downward by the contracted conductive adhesive DS. It becomes easier to move away from the substrate portion 110a.

  The conductive adhesive DS contains a conductive powder as a conductive filler in a binder such as a silicone resin. Examples of the conductive powder include aluminum, molybdenum, tungsten, platinum, palladium, silver, titanium, One containing either nickel or nickel iron, or a combination thereof is used. Moreover, as a binder, a silicone resin, an epoxy resin, a polyimide resin, or a bismaleimide resin is used, for example.

  The lid 130 is made of an alloy containing at least one of iron, nickel, and cobalt, for example. Such a lid 130 is for hermetically sealing the recess K in a vacuum state or the recess K filled with nitrogen gas or the like. Specifically, the lid 130 is placed on the frame 110b of the package 110 in a predetermined atmosphere, and the sealing conductor pattern 112 of the frame 110b and the sealing member 131 of the lid 130 are welded. In this way, by applying a predetermined current and performing seam welding, the frame portion 110b is joined.

  The sealing member 131 is provided at a position of the lid 130 facing the sealing conductor pattern 112 provided on the upper surface of the frame 110 b of the package 110. The sealing member 131 is provided by, for example, silver solder or gold tin.

  The piezoelectric device according to one aspect of the present invention is provided from the conductive bonding member 140 to the side surface of the conductive bonding member 140 and the conductive adhesive provided between the upper surface of the substrate portion 110a of the package 110. By having the DS, the distance is increased by the length in the vertical direction of the inner side surface of the conductive bonding member 140. Therefore, the piezoelectric device can reduce the short circuit caused by contact between the conductive adhesives provided on the adjacent conductive bonding members 140.

  Further, the piezoelectric device according to one aspect of the present invention includes the conductive adhesive DS provided from the first flat plate portion 141 to the second flat plate portion 142, so that the conductive adhesive DS is At the time of curing shrinkage, the fixed end side of the crystal element 120 is pulled downward by the contracted conductive adhesive DS, so that the tip of the crystal element 120 is easily separated from the substrate part 110 a of the package 110. Therefore, it can prevent that the front-end | tip part of the crystal element 120 contacts the board | substrate part 110a in the recessed part K of the package 110. FIG.

  Hereinafter, the manufacturing method of the piezoelectric device in this embodiment will be described. As shown in FIGS. 5 and 6, the piezoelectric device manufacturing method includes a package 110 having a pair of electrode pads 111 on the upper surface, and a crystal element 120 having a pair of conductive bonding members 140 on the lower surface. (A), (b) and (c) in FIG. 5, a pair of conductive bonding members 140 are positioned on the pair of electrode pads 111 in correspondence with each other, and a pair of electrodes A contact step of bringing the pad 111 and the pair of conductive bonding members 140 into contact with each other (FIG. 6A), and irradiating the pair of conductive bonding members 140 with laser light allows the pair of conductive bonding members 140 to be in contact with each other. And a conductive bonding member bonding step for bonding the pair of electrode pads 111 and the pair of conductive bonding members 140 (FIG. 6B).

(Preparation process)
As shown in FIGS. 5A to 5C, the preparation process includes a package 110 having a pair of electrode pads 111 on the upper surface and a crystal having a pair of conductive bonding members 140 on the lower surface. This is a step of preparing the element 120.

  Preparation of the package 110 will be described. The package 110 includes a board part 110a and a frame part 110b provided on the board part 110a. The package 110 has a recess K surrounded by the substrate part 110a and the frame part 110b. An electrode pad 111 is provided on the upper surface of the substrate part 110a.

  Here, a method for manufacturing the package 110 will be described. When the substrate part 110a and the frame part 110b are made of alumina ceramics, first, a plurality of ceramic green sheets obtained by adding and mixing an appropriate organic solvent or the like to a predetermined ceramic material powder is prepared. Next, a predetermined conductive paste is applied to the surface of the ceramic green sheet or the through-hole previously punched by punching the ceramic green sheet by screen printing or the like. Further, these green sheets are laminated and press-molded and fired at a high temperature. Finally, it is manufactured by applying nickel plating or gold plating to a predetermined portion of the conductor pattern, specifically, the portion that becomes the electrode pad 111, the sealing conductor pattern 112, and the external connection electrode terminal G. Moreover, when manufacturing a piezoelectric device, the package 110 is used in a state of being individually accommodated in a conveying jig.

  The preparation of the crystal element 120 provided with the pair of conductive bonding members 140 on the lower surface will be described. As shown in FIGS. 5A and 5B, the crystal element 120 is bonded to the pair of conductive bonding members 140 through the second flat plate portion 142 of the pair of conductive bonding members 140. An adhesive DS is provided. Then, the crystal element 120 is placed on the main surface of the conductive adhesive DS. Further, the conductive adhesive DS is heated and cured, and the second flat plate portion 142 and the crystal element 120 are conductively fixed, thereby bonding the crystal element 120 to the pair of conductive bonding members 140.

  The collective conductive bonding member 150 is formed of a single metal plate using a conductive metal material by a conventionally known etching method or the like. As shown in FIG. 7, the collective conductive bonding members 150 are arranged in series with a plurality of conductive bonding members 140 connected to the frame body 151, and the intervals at which the crystal elements 120 can be inserted are arranged. It is arranged in a state with a gap. The collective conductive bonding member 150 is made of a conductive metal such as copper or aluminum, or an alloy containing at least one of iron, nickel, and cobalt.

  As shown in FIG. 4, the conductive bonding member 140 includes a first flat plate portion 141 and a second flat plate portion 142 provided on the first flat plate portion 141 so as to be smaller than the first flat plate portion 141 in plan view. And have.

  A conductive adhesive DS is provided on the second flat plate portion 142 of the conductive bonding member 140, and the conductive adhesive DS provided on the second flat plate portion 142 is connected to the excitation electrode 122 of the crystal element 120. The crystal element 120 is mounted in a form in which the electrode 123 is attached.

  In addition, a mount device equipped with an image recognition system is used for transporting the crystal element 120. First, the crystal element 120 is adsorbed by the transport nozzle. Next, the mounting position of the crystal element 120 is determined based on the position information of the conductive adhesive DS provided on the upper surface of each conductive bonding member 140 of the collective conductive bonding member 150 stored in advance in the image recognition system. Make fine adjustments in the plane direction. Then, the conveying nozzle is lowered, and the crystal element 120 is placed on the conductive adhesive DS.

  The collective conductive bonding member 150 is accommodated in a curing furnace (not shown), and the conductive adhesive DS is heated and cured by raising the temperature to about 250 ° C., and the second flat plate portion 142 of the conductive bonding member 140 and The crystal element 120 is conductively fixed.

  The curing furnace (not shown) includes a furnace body, a heating unit, a supply unit, and a control unit. The furnace body has an internal space and plays a role of storing the collective conductive joining member. The heating unit plays a role of heating the internal space to a predetermined temperature. As the heating unit, for example, a halogen lamp or a xenon lamp is used.

  When obtaining the pair of conductive bonding members 140, as shown in FIG. 5C, the connection portion between the frame body 151 and the pair of conductive bonding members 140 of each aggregated conductive bonding member 150 is cut. By doing so, each conductive joining member 140 is separated from the frame body 151. The collective conductive bonding member 150 is cut by, for example, dicing or laser processing.

  As a blade used in dicing, for example, a disk-shaped electroformed blade in which diamond abrasive grains or the like are fixed by electroforming is used. Nickel or the like is used as the binder.

(Contact process)
In the contact step, as shown in FIG. 6A, the pair of conductive bonding members 140 are positioned on the pair of electrode pads 111 so as to correspond to each other, and the pair of electrode pads 111 and the pair of conductive bonds are aligned. This is a step of bringing the member 140 into contact.

  A mounting device equipped with an image recognition system is used for transporting the conductive bonding member 140. First, the crystal element 120 bonded to the pair of conductive bonding members 140 is adsorbed by the transport nozzle. Next, the mounting positions of the pair of conductive bonding members 140 are finely adjusted in the plane direction based on the position information of the pair of electrode pads 111 stored in advance in the image recognition system. Then, the transport nozzle is lowered, the conductive bonding member 140 is positioned, and the pair of electrode pads 111 and the pair of conductive bonding members 140 are brought into contact with each other.

(Conductive joining member joining process)
In the conductive bonding member bonding step, as shown in FIG. 6B, each of the pair of conductive bonding members 140 is melted by irradiating the pair of conductive bonding members 140 with laser light. In this step, the pair of electrode pads 111 and the pair of conductive bonding members 140 are bonded.

  The pair of conductive bonding members 140 and the pair of electrode pads 111 are bonded by irradiating laser light toward the conductive bonding members 140 mounted on the electrode pads 111 provided in the recesses K of the package 110. As a result, the conductive bonding member 140 is melted, and the electrode pad 111 and the conductive bonding member 140 are bonded.

  Further, the upper surface of the first flat plate portion 141 is intermittently irradiated with laser light so that the pair of conductive bonding members 140 and the pair of electrode pads 111 are parallel to the short side direction on the frame portion 110b side. To join in a straight line.

  Laser light irradiation is performed in a state where the crystal element 120 is adsorbed by the transport nozzle. By irradiating and bonding the laser light with the crystal element 120 adsorbed by the transport nozzle, the conductive bonding member 140 can be tilted and the tip of the crystal element 120 can be prevented from contacting the substrate portion 110a.

  The laser light is oscillated from a laser oscillation device (not shown). The laser oscillation device irradiates the package 110 fixed to the stage with laser light that is oscillated by the laser oscillation unit, transmitted through the optical path, and collected by the condensing optical system from the normal direction of the plane of the package 110. .

  As the laser oscillation unit, for example, a carbon dioxide laser, a YAG laser, a YVO4 laser, a semiconductor laser, or an excimer laser is used. For example, in the case of a YVO4 laser, a third harmonic of the laser having a wavelength of, for example, 300 to 400 nm is used.

  Further, the pair of conductive bonding members 140 having the first flat plate portion 141 and the second flat plate portion 142 and the pair of electrode pads 111 are bonded to the first flat plate portion 141 of the pair of conductive bonding members 140 by laser. By irradiating light, each of the first flat plate portions 141 is melted, and the pair of electrode pads 111 and the pair of conductive bonding members 140 are bonded. By doing so, since the pair of conductive bonding members 140 and the pair of electrode pads 111 are bonded to the electrode pads 111 by the first flat plate portion 141 having a thin vertical thickness, the output of the laser beam is reduced. Can be lowered. Therefore, the thermal stress applied to the package 110 can be reduced.

  In the method of manufacturing a piezoelectric device according to the present embodiment, the pair of conductive bonding members 140 are melted by irradiating the pair of conductive bonding members 140 with laser light, so that the pair of electrode pads 111 and the pair of conductive layers are melted. Since the bonding member 140 is bonded, it can be bonded to the electrode pad 111 without using the conductive adhesive DS. Therefore, the manufacturing method of the piezoelectric device in the present embodiment can prevent a short circuit between adjacent electrode pads 111 caused by the conductive adhesive DS being crushed and leaking.

  The piezoelectric device manufacturing method according to the present embodiment cuts the collective conductive bonding member 150 from which a plurality of conductive bonding members 140 can be cut out to obtain a pair of conductive bonding members 140, thereby obtaining the crystal element 120 and Bonding with the conductive bonding member 140 can be performed collectively in the state of the collective conductive bonding member 150. Further, the bonding of the crystal element 120 eliminates the need to individually fix the individual conductive bonding members 140 to a jig, thereby improving productivity.

  The piezoelectric device manufacturing method according to the present embodiment irradiates the first flat plate portion 141 of the pair of conductive bonding members 140 having the first flat plate portion 141 and the second flat plate portion 142 with laser light. Since each of the flat plate portions 141 is melted and includes a step of bonding the pair of electrode pads 111 and the pair of conductive bonding members 140, the first flat plate portion 141 having a small vertical thickness is bonded. The output can be lowered. Therefore, the piezoelectric device manufacturing method can reduce chipping of the package 110 due to thermal stress applied to the package 110.

  In addition, it is not limited to this embodiment, A various change, improvement, etc. are possible in the range which does not deviate from the summary of this invention. In the above embodiment, the case where the frame portion 110b is integrally formed of a ceramic material as in the case of the substrate portion 110a has been described. However, the frame portion 110b may be made of metal. In this case, the frame portion is bonded to the conductor film of the substrate portion via a brazing material such as Ag—Cu.

  In the above embodiment, the case where the crystal element for AT is used as the crystal element has been described, but a tuning fork type bending having a base and two flat plate-shaped vibrating arms extending in the same direction from the side surface of the base. A crystal element may be used.

DESCRIPTION OF SYMBOLS 110 ... Package 110a ... Board | substrate part 110b ... Frame part 111 ... Electrode pad 112 ... Conductive pattern for sealing 120 ... Crystal element 121 ... Crystal base plate 122 ... Excitation Electrode 123... Connection electrode 124... Extraction electrode 130 .. Lid 131... Sealing member 140... Conductive joining member 141. Flat plate portion 150 ... Collective conductive bonding member K ... Recessed portion DS ... Conductive adhesive G ... Terminal for external connection

Claims (5)

A package having a pair of electrode pads on the upper surface;
A pair of conductive bonding members provided corresponding to the pair of electrode pads;
A quartz element supported via a conductive adhesive on the pair of conductive bonding members,
The piezoelectric device, wherein the conductive adhesive is provided from the conductive bonding member to a side surface of the conductive bonding member so as to be spaced from the upper surface of the package. The piezoelectric device according to claim 1,
The pair of conductive joining members includes a first flat plate portion and a second flat plate portion provided on the first flat plate portion in a plan view smaller than the first flat plate portion,
The piezoelectric device is characterized in that the conductive adhesive is provided from the first flat plate portion to the second flat plate portion. Preparing a package having a pair of electrode pads on the upper surface and a crystal element having a pair of conductive bonding members on the lower surface;
Positioning the pair of conductive bonding members correspondingly on the pair of electrode pads, and bringing the pair of electrode pads and the pair of conductive bonding members into contact with each other;
Irradiating the pair of conductive bonding members with laser light to melt each of the pair of conductive bonding members and bonding the pair of electrode pads and the pair of conductive bonding members. A method for manufacturing a piezoelectric device. A method for manufacturing a piezoelectric device according to claim 3,
A method of manufacturing a piezoelectric device, comprising a step of cutting a collective conductive bonding member capable of cutting out a plurality of conductive bonding members to obtain the pair of conductive bonding members. A method for manufacturing a piezoelectric device according to claim 3,
The pair of conductive bonding members includes a first flat plate portion and a second flat plate portion provided on the first flat plate portion in a plan view smaller than the first flat plate portion,
By irradiating the first flat plate portions of the pair of conductive bonding members with laser light, each of the first flat plate portions is melted to bond the pair of electrode pads and the pair of conductive bonding members. The manufacturing method of the piezoelectric device characterized by including the process.

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