JP2013171944A - Semiconductor manufacturing apparatus and semiconductor device manufacturing method using the apparatus - Google Patents

Semiconductor manufacturing apparatus and semiconductor device manufacturing method using the apparatus Download PDF

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Publication number
JP2013171944A
JP2013171944A JP2012034333A JP2012034333A JP2013171944A JP 2013171944 A JP2013171944 A JP 2013171944A JP 2012034333 A JP2012034333 A JP 2012034333A JP 2012034333 A JP2012034333 A JP 2012034333A JP 2013171944 A JP2013171944 A JP 2013171944A
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ball
bonding
semiconductor
manufacturing apparatus
electrode
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Masaru Ogawa
賢 小川
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Toshiba Corp
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Toshiba Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8502—Applying permanent coating, e.g. in-situ coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus which can improve the junction between semiconductor chip electrodes and connection members and a semiconductor device manufacturing method using the apparatus.SOLUTION: The semiconductor manufacturing apparatus comprises a bonding stage 12 on which a semiconductor chip 31 having an electrode 33 is mounted, a capillary for joining copper wire which is the connection member of a first member to the electrode 33, a load supply unit for applying load to the capillary, and a film deposition unit 40 for depositing gold which is a second member different from the first member to a ball surface formed at the tip of the connection member. The semiconductor device manufacturing method includes a step of forming a ball at the tip of the connection member of the first material, a step of depositing the second member on the ball surface, and a bonding step of bonding the ball having the second member formed on its surface to the electrode 33 of the semiconductor chip 31.

Description

本発明の実施形態は，半導体製造装置及びその装置を用いた半導体装置の製造方法に関
する。 Embodiments described herein relate generally to a semiconductor manufacturing apparatus and a semiconductor device manufacturing method using the apparatus.

半導体の組立工程では，金ワイヤを使用したワイヤボンディングが主流であるが，金ワ
イヤに比べ材料コストが安い銅ワイヤを使用したボンディングが行われつつある。 In the semiconductor assembly process, wire bonding using gold wire is the mainstream, but bonding using copper wire, which has a lower material cost than gold wire, is being performed.

特開２０１１−４０６３５号公報JP 2011-40635 A

実施形態は，半導体チップの電極と接続部材の接合を向上可能な半導体製造装置及びそ
の装置を用いた半導体装置の製造方法を提供する。 Embodiments provide a semiconductor manufacturing apparatus capable of improving the bonding between an electrode of a semiconductor chip and a connection member, and a method of manufacturing a semiconductor device using the apparatus.

実施形態の半導体装置の製造方法は，第１材料の接続部材の先端にボールを形成する工
程と，前記ボール表面に前記第１部材と異なる第２部材を成膜する工程と，前記第２部材
が表面に形成されたボールを半導体チップの電極にボンディングするボンディング工程と
を備える。 The method for manufacturing a semiconductor device according to the embodiment includes a step of forming a ball at a tip of a connection member made of a first material, a step of forming a second member different from the first member on the surface of the ball, and the second member. A bonding step of bonding the ball formed on the surface to the electrode of the semiconductor chip.

実施形態の半導体製造装置は，電極を有する半導体チップが載置されるボンディングス
テージと，前記電極に第１部材の接続部材を接合するキャピラリと，前記キャピラリに荷
重を与える荷重供給部と，前記接続部材の先端に形成されたボール表面に前記第１部材と
異なる第２部材を成膜する成膜部とを備える。 The semiconductor manufacturing apparatus according to the embodiment includes a bonding stage on which a semiconductor chip having electrodes is placed, a capillary that joins a connection member of a first member to the electrode, a load supply unit that applies a load to the capillary, and the connection A film forming unit that forms a second member different from the first member on a ball surface formed at a tip of the member;

第１の実施形態にかかる半導体製造装置の概略を示す側面図である。It is a side view showing the outline of the semiconductor manufacturing device concerning a 1st embodiment. 第１の実施形態にかかる半導体製造装置のボンディングステージ１２を上面視した図である。It is the figure which looked at the bonding stage 12 of the semiconductor manufacturing apparatus concerning 1st Embodiment from the upper surface. 図２のＸ−Ｘの断面を拡大した図である。It is the figure which expanded the cross section of XX of FIG. 図４（ａ）は、本実施形態の半導体製造装置を用いたボンディング工程を示すフローチャート図である。図４（ｂ）は，図４のうち，ステップ２を具体的に示したフローチャート図である。FIG. 4A is a flowchart showing a bonding process using the semiconductor manufacturing apparatus of this embodiment. FIG. 4B is a flowchart specifically showing step 2 in FIG. ステップＳ２の際，ボール２０及び窪み４１を拡大した拡大図The enlarged view which expanded the ball | bowl 20 and the hollow 41 in the case of step S2 変形例１の半導体製造装置のうち，窪み４１部分を示す側方断面図である。FIG. 10 is a side cross-sectional view showing a recess 41 portion in the semiconductor manufacturing apparatus of Modification 1; 変形例２の半導体製造装置のうち，貫通孔４８の部分を示す側方断面図である。9 is a side sectional view showing a portion of a through hole 48 in a semiconductor manufacturing apparatus according to Modification 2. FIG.

以下，本発明の実施形態について，図面を参照しながら説明する。なお，図面は模式的
または概念的なものであり，各部分の厚みと幅との関係，部分間の大きさの比係数などは
，必ずしも現実のものと同一とは限らない。また，同じ部分を表す場合であっても，図面
により互いの寸法や比係数が異なって表される場合もある。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio coefficient between the parts, etc. are not necessarily the same as the actual ones. In addition, even when the same part is represented, the dimensions and ratio coefficient may be represented differently depending on the drawing.

また，本願明細書と各図において，既出の図に関して前述したものと同様の要素には同
一の符号を付して詳細な説明は適宜省略する。 Further, in the present specification and each drawing, the same reference numerals are given to the same elements as those described above with reference to the previous drawings, and detailed description will be omitted as appropriate.

（第１の実施形態）
［半導体製造装置の構成］
まず，第１の実施形態の半導体製造装置について，図１を用いて説明する。図１は第１
の実施形態にかかる半導体製造装置の概略を示す側面図である。 (First embodiment)
[Configuration of semiconductor manufacturing equipment]
First, the semiconductor manufacturing apparatus of the first embodiment will be described with reference to FIG. 1 is the first
It is a side view which shows the outline of the semiconductor manufacturing apparatus concerning this embodiment.

図１に示すように，半導体製造装置は，架台１１と，ボンディングステージ１２と，
キャピラリ１３と，ボンディングアーム１４と，トーチ１５と，カットクランパー１７と
，カメラ１８とを備えている。 As shown in FIG. 1, the semiconductor manufacturing apparatus includes a gantry 11, a bonding stage 12,
A capillary 13, a bonding arm 14, a torch 15, a cut clamper 17, and a camera 18 are provided.

架台１１は，ボンディングステージを支える機能を有する。ボンディングステージ１２
は，ボンディング対象物３０である半導体チップ，支持基板またはリードフレム等を載置
するためのステージである。ボンディングステージ１２は，駆動装置（図示略）によりＸ
，Ｙ方向に可動できる。 The gantry 11 has a function of supporting the bonding stage. Bonding stage 12
Is a stage for mounting a semiconductor chip, a support substrate, a lead frame, or the like, which is the bonding object 30. The bonding stage 12 is driven by a driving device (not shown)
, Movable in the Y direction.

キャピラリ１３は，ボンディングアーム１４の先端部に取り付けられている。キャピラ
リ１３は，その中心部に貫通孔を有する。金製のワイヤ（接続部材）１９がこの貫通孔に
挿通されている。ここで，ワイヤ１９は，例えば銅（第１材料）で形成される。 The capillary 13 is attached to the tip of the bonding arm 14. The capillary 13 has a through hole at the center thereof. A gold wire (connection member) 19 is inserted through the through hole. Here, the wire 19 is made of, for example, copper (first material).

キャピラリ１３の先端部から突出したワイヤ１９の先端では，トーチ１５とワイヤ１９
と間に電圧が印加されることで生じるスパークによって，キャピラリ１３の先端から突出
したワイヤ１９が溶融される。その結果，ボール２０がワイヤ１９の先端部に形成される
。 At the tip of the wire 19 protruding from the tip of the capillary 13, the torch 15 and the wire 19
The wire 19 protruding from the tip of the capillary 13 is melted by a spark generated by applying a voltage between them. As a result, the ball 20 is formed at the tip of the wire 19.

ボンディングアーム１４は，キャピラリ１３をボンディングステージ１２上に載置され
るボンディング対象物３０に対して接離方向であるＺ方向，即ちボンディングステージ１
２に対して上昇，下降できる。または，荷重供給機構（図示略）は，ボンディングアーム
１４に荷重を供給する。その結果，ボンディングアーム１４はＺ方向に上昇，下降できる
。 The bonding arm 14 moves the capillary 13 in the Z direction that is a contact / separation direction with respect to the bonding object 30 placed on the bonding stage 12, that is, the bonding stage 1.
Can rise and fall with respect to 2. Alternatively, a load supply mechanism (not shown) supplies a load to the bonding arm 14. As a result, the bonding arm 14 can be raised and lowered in the Z direction.

また，ボンディングアーム１４には，さらに超音波発振機構（図示略）により超音波エ
ネルギーが与えられるが，ボンディングアーム１４自体を，超音波振動させる機能を有す
る超音波トランスデューサとしてもよい。なお，超音波の発振を入切する制御装置（図示
略）が付加されたボンディングアーム１４としてもよい。 Further, although ultrasonic energy is given to the bonding arm 14 by an ultrasonic oscillation mechanism (not shown), the bonding arm 14 itself may be an ultrasonic transducer having a function of vibrating ultrasonically. Note that a bonding arm 14 to which a control device (not shown) for turning on and off the ultrasonic oscillation is added may be used.

カットクランパー１７は，ボンディング工程ののちにワイヤ１９を切断する機能を有す
る。 The cut clamper 17 has a function of cutting the wire 19 after the bonding process.

ボンディング対象物３０は，例えば半導体チップ３１の電極（以下，第１電極という）３
３と支持基板３２の外部取り出し電極(以下，第２電極という)３４である。これらの電極
の材料は，例えば銅（第１材料）を使用する。電極の材料は，銅に限定されることなく，
例えばニッケルやスズ等（第１材料）でもよい。 The bonding object 30 is, for example, an electrode (hereinafter referred to as a first electrode) 3 of a semiconductor chip 31.
3 and an external extraction electrode (hereinafter referred to as a second electrode) 34 of the support substrate 32. For example, copper (first material) is used as the material of these electrodes. The material of the electrode is not limited to copper,
For example, nickel or tin (first material) may be used.

次に，本実施形態のボンディングステージ１２に設けられた成膜部４０について，図２
を用いて説明する。図２は，第１の実施形態にかかる半導体製造装置のボンディングステ
ージ１２を上面視した図である。図３は，図２のＸ−Ｘの断面を拡大した図である。 Next, regarding the film forming unit 40 provided on the bonding stage 12 of the present embodiment, FIG.
Will be described. FIG. 2 is a top view of the bonding stage 12 of the semiconductor manufacturing apparatus according to the first embodiment. FIG. 3 is an enlarged view of the section XX in FIG.

図２に示すように，成膜部４０はボンディングステージ１２に形成される。成膜部４０
は，複数の窪み４１と，第１ロール４２と，第２ロールの部分（以下、第２ロールを４３
と説明する場合もある）４３を有する。複数の窪み４１それぞれは，略半球形状の窪みで
ある。なお，窪み４１の形状は略半球形状である場合に限定されることなく，ワイヤ１９
の先端に形成されたボール表面と係合する形状であればよい。 As shown in FIG. 2, the film forming unit 40 is formed on the bonding stage 12. Deposition unit 40
Are a plurality of depressions 41, a first roll 42, and a second roll portion (hereinafter, the second roll 43
43). Each of the plurality of depressions 41 is a substantially hemispherical depression. The shape of the recess 41 is not limited to a substantially hemispherical shape, and the wire 19
Any shape that engages with the surface of the ball formed at the tip of the ball may be used.

図３に示すように，第１ロール４２は，例えば金材料（第２材料）のシートが巻かれた
ロールである。なお，第２材料として金を用いて説明したが，これに限定されることなく
，第１材料と異なる材料であればよい。 As shown in FIG. 3, the 1st roll 42 is a roll by which the sheet | seat of the gold | metal material (2nd material) was wound, for example. In addition, although demonstrated using gold | metal | money as a 2nd material, it should just be a material different from a 1st material, without being limited to this.

第１ロール４２は，ボンディングテーブル１２に接続するように設けられる。ここで，
第１ロール４２の搬出口は，ボンディングテーブル１２に向けて設けられる。第１ロール
に巻かれた金材料のシート４４が搬出されて，複数の窪み４１を覆うように載置される。
第２ロール４３は，金材料のシート４４を巻き取る機能を有する。具体的には，第１ロー
ル４２の搬出口から搬出された金材料のシート４４を第２ロール４３が巻き取る構成であ
る。 The first roll 42 is provided so as to be connected to the bonding table 12. here,
The carry-out port of the first roll 42 is provided toward the bonding table 12. A sheet 44 of gold material wound around the first roll is carried out and placed so as to cover the plurality of depressions 41.
The second roll 43 has a function of winding the sheet 44 of gold material. Specifically, the second roll 43 takes up the sheet 44 of the gold material carried out from the carry-out port of the first roll 42.

ここで，第１ロール４２と第２ロール４３の動作は，例えば図示せぬカメラを用いて制
御される。 Here, the operations of the first roll 42 and the second roll 43 are controlled using, for example, a camera (not shown).

［ボンディング工程］
次に，本実施形態の半導体製造装置を用いたボンディング工程について，図１，図４及
び図５のフローチャート図を用いて説明する。 [Bonding process]
Next, the bonding process using the semiconductor manufacturing apparatus of this embodiment will be described with reference to the flowcharts of FIGS.

図４（ａ）は，本実施形態の半導体製造装置を用いたボンディング工程を示すフローチ
ャート図である。図４（ｂ）は，図４のうち，ステップ２を具体的に示したフローチャー
ト図である。図５はステップＳ２の際，ボール２０及び窪み４１を拡大した拡大図である
。 FIG. 4A is a flowchart showing a bonding process using the semiconductor manufacturing apparatus of this embodiment. FIG. 4B is a flowchart specifically showing step 2 in FIG. FIG. 5 is an enlarged view in which the ball 20 and the depression 41 are enlarged in step S2.

例えばＡｒアルゴンガスの雰囲気中で，図４に示すように，まず，ステップＳ１で，キ
ャピラリ１３の先端部から突出したワイヤ１９の先端では，トーチ１５とワイヤ１９と間
に電圧が印加されることで生じるスパークによって，キャピラリ１３の先端から突出した
ワイヤ１９が溶融される。その結果，ボール２０がワイヤ１９の先端部に形成される。 For example, in an atmosphere of Ar argon gas, as shown in FIG. 4, first, in step S 1, a voltage is applied between the torch 15 and the wire 19 at the tip of the wire 19 protruding from the tip of the capillary 13. The wire 19 protruding from the tip of the capillary 13 is melted by the spark generated by the above. As a result, the ball 20 is formed at the tip of the wire 19.

ステップＳ２で，銅のワイヤ１９に形成されたボール２０表面に金膜を形成する。具体
的には，ワイヤ１９の先端部にボール２０が形成された状態で，キャピラリ１３は駆動装
置（図示略）の制御によって成膜部４０に移動する。駆動装置によって，キャピラリ１３
は，直下に窪み４１がある位置まで移動する。そののち，ボンディングアーム１４の制御
によって，キャピラリ１３は下降する。 In step S 2, a gold film is formed on the surface of the ball 20 formed on the copper wire 19. Specifically, the capillary 13 moves to the film forming unit 40 under the control of a driving device (not shown) with the ball 20 formed at the tip of the wire 19. Depending on the driving device, the capillary 13
Moves to a position where there is a depression 41 immediately below. After that, the capillary 13 is lowered by the control of the bonding arm 14.

その結果，先端のボール２０が直下にある金材料のシート４４を押し圧し，ボール２０
が窪みに係合する。このとき，ボール２０の表面のうち，ボンディングステージ１２側の
表面に金材料のシートが付着する。したがって，ボール２０表面に金膜が形成される（図
４（ｂ）のステップＳ２−１，図５（ａ）参照）。 As a result, the ball 20 at the front end presses and presses the sheet 44 of the gold material immediately below the ball 20.
Engages the recess. At this time, a sheet of gold material adheres to the surface of the ball 20 on the bonding stage 12 side. Accordingly, a gold film is formed on the surface of the ball 20 (see step S2-1 in FIG. 4B and FIG. 5A).

ボンディングアーム１４の制御によって，キャピラリ１３は上昇する。キャピラリ１３
の上昇する力によって，金材料のシート４４のうち，ボール表面に付着した部分とそれ以
外の金材料のシートに分離される。したがって，図５（ｂ）に示すように，ワイヤ１９の
先端部に形成されたボール２０表面に金膜を形成することができる（図４（ｂ）のステッ
プＳ２−２参照）。 The capillary 13 is raised by the control of the bonding arm 14. Capillary 13
As a result of the rising force, the gold material sheet 44 is separated into a portion adhering to the ball surface and the other gold material sheets. Therefore, as shown in FIG. 5B, a gold film can be formed on the surface of the ball 20 formed at the tip of the wire 19 (see step S2-2 in FIG. 4B).

ステップＳ３で，図５（ｂ）の状態で，第１電極３３や第２電極３４をボンディングす
る。 In step S3, the first electrode 33 and the second electrode 34 are bonded in the state shown in FIG.

［第１実施形態の効果］
以上より，実施形態は，半導体チップの電極と接続部材の接合を向上可能な半導体製造
装置及びその装置を用いた半導体装置の製造方法を提供できる。以下，具体的に説明する
。説明の便宜上，ワイヤ１９が銅材料で，第１電極３３や第２電極３４が銅材料のときに
金膜を形成せずにワイヤ１９と第１及び第２電極３３，３４を接合する比較例と比較して
，本実施形態の効果を説明する。 [Effect of the first embodiment]
As described above, the embodiment can provide a semiconductor manufacturing apparatus capable of improving the bonding between the electrode of the semiconductor chip and the connection member, and a semiconductor device manufacturing method using the apparatus. This will be specifically described below. For convenience of explanation, when the wire 19 is made of a copper material and the first electrode 33 and the second electrode 34 are made of a copper material, a comparative example in which the wire 19 and the first and second electrodes 33 and 34 are joined without forming a gold film. The effects of this embodiment will be described in comparison with FIG.

ワイヤ１９が銅材料のとき，スパークで形成されるボール２０の形状は，ワイヤが金材
料のときのボールの形状と比較して下方向（ボンディングステージ側）に延びた形状とな
る。これは，銅材料の硬さが金材料よりも高いことにより表面張力によるボール２０の球
状形成に影響があるためである。このため，ワイヤ１９が銅材料のときのボール２０をそ
のまま第１電極３３や第２電極３４に接合すると，ワイヤが金材料のときのボールの形状
と比較して接触面積が少なく接合力が低下する場合がある。 When the wire 19 is made of a copper material, the shape of the ball 20 formed by sparks is a shape extending downward (on the bonding stage side) compared to the shape of the ball when the wire is made of a gold material. This is because the hardness of the copper material is higher than that of the gold material, which affects the spherical formation of the ball 20 due to surface tension. For this reason, if the ball 20 when the wire 19 is made of a copper material is directly bonded to the first electrode 33 or the second electrode 34, the contact area is small compared to the shape of the ball when the wire is made of a gold material, and the bonding force is reduced. There is a case.

しかし，本実施形態では，ワイヤ１９の先端に形成されたボール２０の表面にワイヤ２
０の材料（第１材料）とは異なる金膜（第２材料）で成膜する。したがって，本実施形態
では，ワイヤ１９と第１及び第２電極３３，３４の接合部分に，ワイヤ１９，第１及び第
２電極３３，３４の第１材料と，ボール２０に成膜された第２材料の合金を形成できる。
その結果，本実施形態は，比較例と比較して，半導体チップの電極と接続部材の接合を向
上可能な半導体製造装置及びその装置を用いた半導体装置の製造方法を提供できる。 However, in this embodiment, the wire 2 is formed on the surface of the ball 20 formed at the tip of the wire 19.
A gold film (second material) different from the zero material (first material) is formed. Therefore, in the present embodiment, the first material of the wire 19, the first and second electrodes 33 and 34, and the first film formed on the ball 20 are formed at the joint portion of the wire 19 and the first and second electrodes 33 and 34. Two-material alloys can be formed.
As a result, the present embodiment can provide a semiconductor manufacturing apparatus capable of improving the bonding between the electrodes of the semiconductor chip and the connection member and a method of manufacturing a semiconductor device using the apparatus as compared with the comparative example.

（変形例１）
次に本実施形態の変形例について，図６を用いて説明する。図６は，変形例１の半導体
製造装置のうち，窪み４１部分を示す側方断面図である。 (Modification 1)
Next, a modification of the present embodiment will be described with reference to FIG. FIG. 6 is a side cross-sectional view showing a hollow 41 portion in the semiconductor manufacturing apparatus of the first modification.

変形例１の半導体製造装置は，第１実施形態の半導体製造装置に対して，通電機構４５
，４６と、通電機構４５，４６を制御する制御部４７を設ける点で相違し，その他の構成
は同様であり詳細な説明は省略する。 The semiconductor manufacturing apparatus according to Modification 1 is different from the semiconductor manufacturing apparatus according to the first embodiment in terms of an energization mechanism 45.
, 46 and a control unit 47 for controlling the energization mechanisms 45, 46, and the other configurations are the same, and detailed description thereof is omitted.

［変形例１の半導体製造装置の構成］
図６（ａ）に示すように、通電機構４５は、所望の電流を通電する機能を有する。この
通電機構４５は、窪み４１の端部を囲むように配置される。 [Configuration of Semiconductor Manufacturing Apparatus of Modification 1]
As shown in FIG. 6A, the energization mechanism 45 has a function of energizing a desired current. The energization mechanism 45 is disposed so as to surround the end of the recess 41.

ボール２０が金材料のシート４４を押し圧し窪み４１と係合するとき、制御部４７は通
電機構４５に所望の電流を通電するように制御する。この通電によって、金材料のシート
４４のうち、窪み４１に押し圧された金材料のシートと、それ以外の金材料のシートを分
離することができる。 When the ball 20 presses and presses the sheet 44 of gold material and engages with the depression 41, the control unit 47 controls the energization mechanism 45 to energize a desired current. By this energization, it is possible to separate the gold material sheet pressed against the depression 41 from the gold material sheet 44 and the other gold material sheets.

図６（ａ）に示すように、通電機構４５が窪み４１の端部を囲むように配置される場合
に限られず、例えば、図６（ｂ）に示すように、通電機構４６が窪み４１全体を囲むよう
に配置されてもよい。 As shown in FIG. 6A, the present invention is not limited to the case where the energization mechanism 45 is disposed so as to surround the end portion of the depression 41. For example, as shown in FIG. May be arranged so as to surround.

［変形例１の効果］
変形例１でも、第１実施形態と同様に、半導体チップの電極と接続部材の接合を向上可
能な半導体製造装置及びその装置を用いた半導体装置の製造方法を提供できる。 [Effect of Modification 1]
Similarly to the first embodiment, the first modification can also provide a semiconductor manufacturing apparatus capable of improving the bonding between the electrodes of the semiconductor chip and the connection member, and a semiconductor device manufacturing method using the apparatus.

また、第１実施形態では、キャピラリ１３の上昇する物理的な力を用いて、金材料のシ
ート４４のうち，ボール表面に付着した部分とそれ以外の金材料のシートに分離していた
。このため、ボール表面に付着する金材料のシート４４を所望の範囲に成膜できない場合
がある。 In the first embodiment, the physical force that the capillary 13 ascends is used to separate the gold material sheet 44 into a portion adhering to the ball surface and the other gold material sheets. For this reason, the sheet | seat 44 of the gold | metal | money material adhering to a ball | bowl surface may be unable to form into a desired range.

しかし、変形例１の実施形態は、通電機構４５、４６を有する。例えば、図６（ａ）に
示すように、通電機構４５が窪み４１の端部を囲むように配置されて、通電機構４５に通
電されるため、通電機構４５よりも窪み４１内側に形成された金材料のシート４４をより
確実にボール表面に形成することができる。図６（ｂ）に示すように、通電機構４６が窪
み４１を囲むように配置されて、通電機構４５に通電されるため、窪み４１に形成された
金材料のシート４４が、ボール２０表面に成膜され、より確実にボール表面に金膜を形成
することができる。 However, the embodiment of the first modification includes the energization mechanisms 45 and 46. For example, as shown in FIG. 6A, the energization mechanism 45 is disposed so as to surround the end of the depression 41 and is energized to the energization mechanism 45, so that it is formed inside the depression 41 than the energization mechanism 45. The sheet 44 of gold material can be more reliably formed on the ball surface. As shown in FIG. 6B, the energization mechanism 46 is disposed so as to surround the recess 41 and energizes the energization mechanism 45, so that the gold material sheet 44 formed in the recess 41 is placed on the surface of the ball 20. A gold film can be formed on the ball surface more reliably.

（変形例２）
次に本実施形態の変形例について，図７は、変形例２の半導体製造装置のうち，貫通孔
４８の部分を示す側方断面図である。 (Modification 2)
Next, FIG. 7 is a side sectional view showing a portion of the through hole 48 in the semiconductor manufacturing apparatus of Modification 2 for the modification of the present embodiment.

変形例１の半導体製造装置は，第１実施形態の半導体製造装置に対して，複数の貫通孔
４８とレーザー発生器４９を設ける点で相違し，その他の構成は同様であり詳細な説明は
省略する。 The semiconductor manufacturing apparatus of Modification 1 is different from the semiconductor manufacturing apparatus of the first embodiment in that a plurality of through holes 48 and a laser generator 49 are provided, and other configurations are the same, and detailed description thereof is omitted. To do.

［変形例１の半導体製造装置の構成］
図７に示すように、複数の貫通孔４８は、ボンディングステージ１２を貫通する孔であ
る。複数の貫通孔４８それぞれは、複数の窪み４１それぞれと同一の位置に配置される。
レーザー発生器４９は、貫通孔４８に照射するレーザーを発生し、貫通孔４８に発生した
レーザーを、貫通孔４８を介して、照射する機能を有する。 [Configuration of Semiconductor Manufacturing Apparatus of Modification 1]
As shown in FIG. 7, the plurality of through holes 48 are holes that penetrate the bonding stage 12. Each of the plurality of through holes 48 is disposed at the same position as each of the plurality of depressions 41.
The laser generator 49 has a function of generating a laser for irradiating the through hole 48 and irradiating the laser generated in the through hole 48 through the through hole 48.

ボール２０が金材料のシート４４を押し圧し、ボール２０の一部が貫通孔４８に入ると
き、レーザー発生器４９からレーザー光が照射される。このレーザー光によって、金材料
のシート４４のうち、窪み４１に押し圧された金材料のシートと、それ以外の金材料のシ
ートを分離することができる。 When the ball 20 presses and presses the sheet 44 of gold material and a part of the ball 20 enters the through hole 48, laser light is emitted from the laser generator 49. By this laser light, the gold material sheet 44 pressed against the depression 41 and the other gold material sheets can be separated from the gold material sheet 44.

［変形例２の効果］
変形例２でも、第１実施形態と同様に、半導体チップの電極と接続部材の接合を向上可
能な半導体製造装置及びその装置を用いた半導体装置の製造方法を提供できる。 [Effect of Modification 2]
Similarly to the first embodiment, the second modification can also provide a semiconductor manufacturing apparatus capable of improving the bonding between the electrode of the semiconductor chip and the connection member, and a semiconductor device manufacturing method using the apparatus.

また、第１実施形態では、キャピラリ１３の上昇する物理的な力を用いて、金材料のシ
ート４４のうち，ボール表面に付着した部分とそれ以外の金材料のシートに分離していた
。このため、ボール表面に付着する金材料のシート４４を所望の範囲に成膜できない場合
がある。 In the first embodiment, the physical force that the capillary 13 ascends is used to separate the gold material sheet 44 into a portion adhering to the ball surface and the other gold material sheets. For this reason, the sheet | seat 44 of the gold | metal | money material adhering to a ball | bowl surface may be unable to form into a desired range.

しかし、変形例２の実施形態は、レーザー発生器４９を有する。例えば、図７に示すよ
うに、ボール２０が金材料のシート４４を押し圧し、ボール２０の一部が貫通孔４８に入
るとき、レーザー発生器４９からレーザー光が照射される。このレーザー光によって、金
材料のシート４４のうち、窪み４１に押し圧された金材料のシートと、それ以外の金材料
のシートを分離することができる。 However, the embodiment of the modified example 2 includes the laser generator 49. For example, as shown in FIG. 7, when the ball 20 presses and presses the sheet 44 of the gold material and a part of the ball 20 enters the through hole 48, laser light is emitted from the laser generator 49. By this laser light, the gold material sheet 44 pressed against the depression 41 and the other gold material sheets can be separated from the gold material sheet 44.

以上，本発明の実施形態を説明したが，本発明は上記実施形態に限定されるものではな
く，その趣旨を逸脱しない範囲内において種々変形して実施することが可能である。さら
に，上記実施形態には種々の段階の発明が含まれており，開示された構成要件を適宜組み
合わせることによって種々の発明が抽出される。例えば，開示された構成要件からいくつ
かの構成要件が削除されても，所定の効果が得られるものであれば，発明として抽出され
得る。 Although the embodiment of the present invention has been described above, the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention. Furthermore, the above embodiments include inventions at various stages, and various inventions can be extracted by appropriately combining the disclosed constituent elements. For example, an invention can be extracted as long as a predetermined effect can be obtained even if some constituent requirements are deleted from the disclosed constituent requirements.

１１…架台
１２…ボンディングステージ
１３…キャピラリ
１４…ボンディングアーム
１５…トーチ
１７…カットクランパー
１８…カメラ
２０…ボール
３０…ボンディング対象物
４０…成膜部
４１…窪み
４２…第１ロール
４３…第２ロール
４４…金材料のシート DESCRIPTION OF SYMBOLS 11 ... Stand 12 ... Bonding stage 13 ... Capillary 14 ... Bonding arm 15 ... Torch 17 ... Cut clamper 18 ... Camera 20 ... Ball 30 ... Bonding object 40 ... Film-forming part 41 ... Depression 42 ... First roll 43 ... Second roll 44 ... Sheet of gold material

Claims (5)

第１材料の接続部材の先端にボールを形成する工程と，
前記ボール表面に前記第１部材と異なる第２部材を成膜する工程と，
前記第２部材が表面に形成されたボールを半導体チップの電極にボンディングするボンデ
ィング工程と
を備えることを特徴とする半導体装置の製造方法。 Forming a ball at the tip of the first material connecting member;
Forming a second member different from the first member on the ball surface;
A bonding step of bonding a ball having the second member formed on the surface thereof to an electrode of a semiconductor chip. 略半球形の窪みを有する成膜ステージ上に前記第２部材の膜が載置されたのちに，
前記ボールは，前記第２部材の膜を介して前記窪みに係合し，
前記ボール表面に前記第１部材と異なる第２部材を成膜することを特長とする請求項１記
載の半導体装置の製造方法。 After the film of the second member is placed on the film forming stage having a substantially hemispherical depression,
The ball engages the recess through the membrane of the second member;
2. The method of manufacturing a semiconductor device according to claim 1, wherein a second member different from the first member is formed on the ball surface. 電極を有する半導体チップが載置されるボンディングステージと，
前記電極に第１部材の接続部材を接合するキャピラリと，
前記接続部材の先端に形成されたボール表面に前記第１部材と異なる第２部材を成膜する
成膜部と
を備えることを特徴とする半導体製造装置。 A bonding stage on which a semiconductor chip having electrodes is placed;
A capillary for joining a connecting member of a first member to the electrode;
A semiconductor manufacturing apparatus comprising: a film forming unit that forms a second member different from the first member on a ball surface formed at a tip of the connection member. 前記成膜部は，
複数の略半球形の窪みを有する成膜ステージと，
前記成膜ステージ上に載置された第２部材の膜と
を備えることを特徴とする請求項３記載の半導体製造装置。 The film forming unit includes:
A film deposition stage having a plurality of substantially hemispherical depressions;
4. The semiconductor manufacturing apparatus according to claim 3, further comprising a second member film placed on the film forming stage. 前記窪みの少なくとも一部を覆うように，通電可能な通電機構を設けることを特徴とする
請求項４記載の半導体製造装置。 The semiconductor manufacturing apparatus according to claim 4, wherein an energization mechanism capable of energizing is provided so as to cover at least a part of the recess.
JP2012034333A 2012-02-20 2012-02-20 Semiconductor manufacturing apparatus and semiconductor device manufacturing method using the apparatus Pending JP2013171944A (en)

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