JP2013164349A - Semiconductor gas detection element - Google Patents
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- 238000001514 detection method Methods 0.000 title claims abstract description 99
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Abstract
Description
本発明は、貴金属線材を覆って焼結させた酸化スズあるいは酸化インジウムを主成分とし、被検知ガスと接触するガス感応部を備えた半導体式ガス検知素子に関する。 The present invention relates to a semiconductor-type gas detection element comprising a gas sensitive portion that is mainly composed of tin oxide or indium oxide covered with a noble metal wire and is in contact with a gas to be detected.
従来、半導体式ガス検知素子のガス感応部の主成分として、酸化スズや酸化インジウムを使用するものが知られていた（特許文献１）。この半導体式ガス検知素子は、ガス感応部に白金などの触媒を添加して一酸化炭素ガスを検出していた。 Conventionally, the thing which uses a tin oxide and an indium oxide as a main component of the gas sensitive part of a semiconductor type gas detection element was known (patent document 1). This semiconductor type gas detecting element detects carbon monoxide gas by adding a catalyst such as platinum to the gas sensitive part.
特許文献１に記載されたような半導体式ガス検知素子を使用してエタノールやアセトン等のにおい成分を含有するガスを検出する場合、当該におい成分だけでなくメタンやプロパンといった可燃性ガスも検出してしまい、におい成分を特に感度よく検出するのは困難であった。
また、シリコーンガスが存在する環境では、半導体式ガス検知素子のガス検知感度が低下したり、選択的に検出すべきにおい成分に対してガス検知感度が上昇して誤作動し易くなるため、におい成分を正確に検出するのは困難であった。これは、被検知ガス中に含まれる揮発性の高いシリコーンガス（有機シリコーンガス）がガス感応部にまで達し、当該ガス感応部にシリコーンガス又はその分解物等が付着することで、半導体式ガス検知素子のガス検知特性が変化すると考えられる。
When detecting a gas containing an odorous component such as ethanol or acetone using a semiconductor gas detection element as described in
In addition, in an environment where silicone gas is present, the gas detection sensitivity of the semiconductor type gas detection element decreases, or the gas detection sensitivity increases with respect to odor components that should be selectively detected. It was difficult to detect the components accurately. This is because the highly volatile silicone gas (organosilicon gas) contained in the gas to be detected reaches the gas sensitive part, and the silicon gas or its decomposition products adhere to the gas sensitive part. It is considered that the gas detection characteristic of the detection element changes.
従って、本発明の目的は、におい成分を感度よく検出でき、シリコーンガスが存在する環境でもにおい成分を正確に検出できる半導体式ガス検知素子を提供することにある。 Accordingly, an object of the present invention is to provide a semiconductor type gas detection element that can detect an odor component with high sensitivity and can accurately detect the odor component even in an environment where silicone gas exists.
上記目的を達成するための本発明に係る半導体式ガス検知素子は、貴金属線材を覆って焼結させた酸化スズあるいは酸化インジウムを主成分とし、被検知ガスと接触するガス感応部を備えた半導体式ガス検知素子であって、その第一特徴構成は、前記ガス感応部にモリブデン酸化物を添加した点にある。 In order to achieve the above object, a semiconductor-type gas sensing element according to the present invention is a semiconductor comprising a gas sensitive portion which is mainly composed of tin oxide or indium oxide covered with a noble metal wire and is in contact with a sensed gas. The gas detection element has a first characteristic configuration in that molybdenum oxide is added to the gas sensitive part.
後述の実施例２，５において、ガス感応部にモリブデン酸化物を添加した半導体式ガス検知素子（本発明例１，２）と、ガス感応部にモリブデン酸化物を添加しない半導体式ガス検知素子（比較例１，２）とについて、におい成分の検知感度を調べた。
この結果、比較例１，２の半導体式ガス検知素子では、におい成分と可燃性ガスとにおいて、ガス感度の明瞭な差異は認められなかったのに対して（図４，８）、本発明例１，２の半導体式ガス検知素子では、エタノール、トルエン、アセトン、酢酸エチルといったにおい成分の検知感度を増感できたと認められた（図３，７）。
In Examples 2 and 5 to be described later, a semiconductor type gas sensing element (invention examples 1 and 2) in which molybdenum oxide is added to the gas sensitive part and a semiconductor type gas sensing element in which molybdenum oxide is not added to the gas sensitive part ( The odor component detection sensitivity was examined for Comparative Examples 1 and 2).
As a result, in the semiconductor type gas detection elements of Comparative Examples 1 and 2, there was no clear difference in gas sensitivity between the odor component and the combustible gas (FIGS. 4 and 8), but the present invention example It was recognized that the detection sensitivity of odor components such as ethanol, toluene, acetone, and ethyl acetate could be sensitized by the
また、後述の実施例３において、シリコーンガスが存在する環境におけるガス感度の変化を、本発明例１および比較例１について調べた。
この結果、比較例１の半導体式ガス検知素子では、特にシリコーンガスの曝露初期において不安定なガス感度を示す（図６）のに対して、本発明例１の半導体式ガス検知素子では、シリコーンガス存在下であっても安定した（ほぼ一定の）ガス感度が得られるものと認められた。
Further, in Example 3 to be described later, changes in gas sensitivity in an environment where silicone gas was present were examined for Invention Example 1 and Comparative Example 1.
As a result, the semiconductor gas sensing element of Comparative Example 1 shows unstable gas sensitivity particularly in the initial exposure of the silicone gas (FIG. 6), whereas the semiconductor gas sensing element of Invention Example 1 shows silicone sensitivity. It was recognized that stable (almost constant) gas sensitivity could be obtained even in the presence of gas.
従って、本構成の半導体式ガス検知素子は、ガス感応部にモリブデン酸化物を添加することにより、におい成分を感度よく検出することができ、かつ、シリコーンガスが存在する環境でもにおい成分を正確に検出できる。 Therefore, the semiconductor gas detection element of this configuration can detect the odor component with high sensitivity by adding molybdenum oxide to the gas sensitive part, and can accurately detect the odor component even in an environment where silicone gas exists. It can be detected.
本発明に係る半導体式ガス検知素子の第二特徴構成は、前記ガス感応部に鉛酸化物を添加した点にある。 The second characteristic configuration of the semiconductor type gas detection element according to the present invention is that a lead oxide is added to the gas sensitive part.
後述の実施例７において、ガス感応部にモリブデン酸化物および鉛酸化物を添加した半導体式ガス検知素子（本発明例３）について、におい成分の検知感度を調べた。この結果、本発明例３の半導体式ガス検知素子では、におい成分であるエタノール、トルエン、アセトン、酢酸エチルに対するガス感度は、可燃性ガスのメタン・イソブタン・水素や、一酸化炭素に比べて増感されたものと認められた。 In Example 7 to be described later, the detection sensitivity of odor components was examined for a semiconductor gas detection element (Invention Example 3) in which molybdenum oxide and lead oxide were added to the gas sensitive part. As a result, in the semiconductor gas detection element of Example 3 of the present invention, the gas sensitivity to ethanol, toluene, acetone, and ethyl acetate, which are odor components, is increased compared to the flammable gases methane, isobutane, hydrogen, and carbon monoxide. It was recognized that it was felt.
従って、本構成の半導体式ガス検知素子は、ガス感応部にモリブデン酸化物および鉛酸化物を添加することにより、可燃性ガスの感度を低下させ、におい成分をより感度よく検出することができる。 Therefore, the semiconductor type gas detection element of this configuration can detect the odor component with higher sensitivity by reducing the sensitivity of the combustible gas by adding molybdenum oxide and lead oxide to the gas sensitive part.
本発明に係る半導体式ガス検知素子の第三特徴構成は、前記モリブデン酸化物の含有量を０．５〜１０モル％とした点にある。 A third characteristic configuration of the semiconductor type gas detection element according to the present invention is that the content of the molybdenum oxide is set to 0.5 to 10 mol%.
実施例８において、ガス感応部に添加するモリブデン酸化物の有効濃度を調べた。その結果、モリブデン酸化物の含有量が０．５〜１０モル％であれば、特に優れたガス感度を有し、かつシリコーンガスが存在する環境でもにおい成分を正確に検出できるものと認められた。 In Example 8, the effective concentration of molybdenum oxide added to the gas sensitive part was examined. As a result, it was recognized that when the content of molybdenum oxide is 0.5 to 10 mol%, it has particularly excellent gas sensitivity and can accurately detect odor components even in an environment where silicone gas is present. .
本発明に係る半導体式ガス検知素子の第四特徴構成は、前記鉛酸化物の含有量を０．０１〜１モル％とした点にある。 The 4th characteristic structure of the semiconductor type gas detection element which concerns on this invention exists in the point which made content of the said lead oxide 0.01-1 mol%.
実施例９において、ガス感応部に添加する鉛酸化物の有効濃度を調べた。その結果、鉛酸化物の含有量を０．０１〜１モル％の範囲とすれば、可燃性ガス感度/エタノール感度の比が１以下となり、可燃性ガスの感度を低下させ、におい成分をより感度よく検出することができるものと認められた。 In Example 9, the effective concentration of lead oxide added to the gas sensitive part was examined. As a result, if the lead oxide content is in the range of 0.01 to 1 mol%, the ratio of combustible gas sensitivity / ethanol sensitivity becomes 1 or less, the sensitivity of the combustible gas is lowered, and the odor component is further increased. It was recognized that it could be detected with high sensitivity.
以下、本発明の実施形態を図面に基づいて説明する。
本発明の半導体式ガス検知素子は、貴金属線材を覆って焼結させた酸化スズあるいは酸化インジウムを主成分とし、被検知ガスと接触するガス感応部を備えた半導体式ガス検知素子であって、ガス感応部にモリブデン酸化物を添加している。
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
The semiconductor type gas detection element of the present invention is a semiconductor type gas detection element comprising a gas sensitive part that comes into contact with a gas to be detected, mainly composed of tin oxide or indium oxide, which is covered with a precious metal wire and sintered. Molybdenum oxide is added to the gas sensitive part.
半導体式ガス検知素子として、熱線型半導体式ガス検知素子、基板型半導体式ガス検知素子が挙げられるが、これに限られるものではない。本実施形態では、熱線型半導体式ガス検知素子とした場合について説明する。 Examples of the semiconductor gas sensing element include, but are not limited to, a hot-wire semiconductor gas sensing element and a substrate-type semiconductor gas sensing element. This embodiment demonstrates the case where it is set as a hot wire type | mold semiconductor type gas detection element.
図１に示すように、熱線型半導体式ガス検知素子Ｒｓは、コイル状の貴金属線材１にガス感応部２が設けてある。貴金属線材１は、例えば白金、パラジウム、白金−パラジウム合金等の線材を使用できる。貴金属線材１の線径、コイル径、コイル巻数等は、従来の熱線型半導体式ガス検知素子に使用するものと同様で、特に限定されない。
ガス感応部２は、当該貴金属線材１に酸化スズあるいは酸化インジウムを主成分とする金属酸化物半導体を塗布して覆い、乾燥後、焼結成型したものである。例えば酸化スズを主成分とした金属酸化物半導体には、アンチモンを０．１モル％添加したものを使用できる。
As shown in FIG. 1, the hot-wire semiconductor gas detection element Rs includes a coil-like
The gas sensitive part 2 is obtained by applying a metal oxide semiconductor mainly composed of tin oxide or indium oxide to the
本発明の半導体式ガス検知素子は、ガス感応部にモリブデン酸化物（ＭｏＯ2、ＭｏＯ3）を添加している。モリブデン酸化物の含有量は、例えば０．５〜１０モル％、好ましくは１〜１０モル％とする。これにより、におい成分を感度よく検出することができ、かつ、シリコーンガスが存在する環境でもにおい成分を正確に検出できる。
におい成分とは、例えば、エタノール、トルエン、アセトン、酢酸エチル、プロピオンアルデヒド、ブチルアルデヒド、ジエチルケトン、酢酸、キシレン、トリメチルアミン、メチルアミン等が挙げられるが、これに限られるものではない。
In the semiconductor gas detection element of the present invention, molybdenum oxide (MoO 2 , MoO 3 ) is added to the gas sensitive part. The content of molybdenum oxide is, for example, 0.5 to 10 mol%, preferably 1 to 10 mol%. Thereby, an odor component can be detected with high sensitivity, and the odor component can be accurately detected even in an environment where silicone gas is present.
Examples of the odor component include, but are not limited to, ethanol, toluene, acetone, ethyl acetate, propionaldehyde, butyraldehyde, diethyl ketone, acetic acid, xylene, trimethylamine, and methylamine.
また、本発明の半導体式ガス検知素子は、ガス感応部にモリブデン酸化物に加えて鉛酸化物である酸化鉛（ＰｂＯ）を添加してもよい。鉛酸化物の含有量は、例えば０．０１〜１モル％とする。これにより、可燃性ガスの感度を低下させ、におい成分をより感度よく検出することができる。 In addition, in the semiconductor gas detection element of the present invention, lead oxide (PbO) which is lead oxide may be added to the gas sensitive part in addition to molybdenum oxide. The lead oxide content is, for example, 0.01 to 1 mol%. Thereby, the sensitivity of combustible gas can be reduced and an odor component can be detected with higher sensitivity.
図２に示すように、熱線型半導体式ガス検知素子Ｒｓは、固定抵抗Ｒ０，Ｒ１，Ｒ２とともにブリッジ回路に組み込んでガスセンサを構成できる。ブリッジ回路は電源Ｅによって常時または間欠的に通電してあり、熱線型半導体式ガス検知素子Ｒｓが検知の際に適した温度となるようにしてある。また、熱線型半導体式ガス検知素子Ｒｓは被検知ガスが吸着すると抵抗値が変化する。このため、本実施形態に係るガスセンサでは、熱線型半導体式ガス検知素子Ｒｓの抵抗値の変化を偏差電圧をとして取り出し、これをセンサ出力Ｖとすることで被検知ガス（におい成分）の濃度を測定することができる。 As shown in FIG. 2, the hot-wire semiconductor gas detection element Rs can be incorporated into a bridge circuit together with fixed resistors R0, R1, and R2 to constitute a gas sensor. The bridge circuit is energized constantly or intermittently by a power source E so that the hot-wire semiconductor gas detection element Rs has a temperature suitable for detection. The resistance value of the hot-wire semiconductor gas detection element Rs changes when the gas to be detected is adsorbed. For this reason, in the gas sensor according to the present embodiment, the change in the resistance value of the hot-wire semiconductor gas detection element Rs is taken out as a deviation voltage, and this is used as the sensor output V, so that the concentration of the detected gas (odor component) can be reduced. Can be measured.
以下に本発明の実施例について説明する。 Examples of the present invention will be described below.
〔実施例１〕
本発明の半導体式ガス検知素子の製造方法を以下に説明する。
アンチモン（Ｓｂ＋５）を０．１モル％ドープして所定の電導度を得た酸化スズ（ＳｎＯ2）半導体のペーストを、白金コイルに塗布して直径が約０．５ｍｍの球状になるように形成し、乾燥後、白金コイルに通電してジュール熱により加熱し、６５０℃で１時間、酸化スズを焼結させた。
[Example 1]
The manufacturing method of the semiconductor type gas detection element of this invention is demonstrated below.
A tin oxide (SnO 2 ) semiconductor paste doped with 0.1 mol% of antimony (Sb + 5) to obtain a predetermined conductivity is applied to a platinum coil to form a sphere with a diameter of about 0.5 mm. After drying, the platinum coil was energized and heated by Joule heat, and tin oxide was sintered at 650 ° C. for 1 hour.
酸化スズの半導体に、１モル/Ｌのモリブデン酸アンモン水溶液の液滴を含浸させ、
２０℃で６０分乾燥させた。乾燥後、白金コイルに通電（１時間）して約６００℃で加熱分解処理を行い、モリブデン酸化物をガス感応部の表面に担持させた半導体式ガス検知素子を作製した。このようにして得られた半導体式ガス検知素子（本発明例１）をブリッジ回路に組み込み、被検知ガスに対する感度評価に使用した。
Impregnating tin oxide semiconductor with 1 mol / L ammonium molybdate droplets,
It was dried at 20 ° C. for 60 minutes. After drying, the platinum coil was energized (for 1 hour) and subjected to thermal decomposition at about 600 ° C. to produce a semiconductor type gas detection element having molybdenum oxide supported on the surface of the gas sensitive part. The semiconductor gas detection element thus obtained (Invention Example 1) was incorporated in a bridge circuit and used for sensitivity evaluation with respect to the gas to be detected.
〔実施例２〕
本発明例１の半導体式ガス検知素子（ガス感応部に２モル％のモリブデン酸化物を添加）と、比較例１として酸化スズを主成分とするガス感応部を有する半導体式ガス検知素子（ガス感応部にモリブデン酸化物を添加しない）とにおいて、各種ガスの検知感度（ＤＣ２．４Ｖ通電時（１０オーム負荷））を調べた。使用したガスは、エタノール、メタン、イソブタン、水素、一酸化炭素、トルエン、アセトン、酢酸エチルであった。
[Example 2]
The semiconductor type gas sensing element of the present invention example 1 (adding 2 mol% of molybdenum oxide to the gas sensitive part) and the semiconductor type gas sensing element having a gas sensitive part mainly composed of tin oxide as a comparative example 1 (gas The sensitivity of detection of various gases (when DC 2.4 V was applied (10 ohm load)) was examined. The gases used were ethanol, methane, isobutane, hydrogen, carbon monoxide, toluene, acetone, and ethyl acetate.
本発明例１の半導体式ガス検知素子による測定結果を図３、比較例１の半導体式ガス検知素子による測定結果を図４に示した。 The measurement result by the semiconductor type gas detection element of Example 1 of the present invention is shown in FIG. 3, and the measurement result by the semiconductor type gas detection element of Comparative Example 1 is shown in FIG.
図３より、本発明例１の半導体式ガス検知素子では、におい成分であるエタノール、トルエン、アセトン、酢酸エチルに対するガス感度は、メタン、一酸化炭素に比べて増感されたと認められた。一方、図４より、比較例１の半導体式ガス検知素子では、何れのガスのガス感度も明確に増感せず、におい成分と可燃性ガスとにおいて、ガス感度の明瞭な差異は認められなかった。
よって、本発明の半導体式ガス検知素子は、ガス感応部にモリブデン酸化物を添加することにより、におい成分を感度よく検出することができるものと認められた。
From FIG. 3, it was recognized that in the semiconductor type gas detection element of Example 1 of the present invention, gas sensitivity to ethanol, toluene, acetone, and ethyl acetate as odor components was sensitized compared to methane and carbon monoxide. On the other hand, from FIG. 4, in the semiconductor type gas detection element of Comparative Example 1, the gas sensitivity of any gas is not clearly sensitized, and no clear difference in gas sensitivity is recognized between the odor component and the combustible gas. It was.
Therefore, it was recognized that the semiconductor type gas detection element of the present invention can detect the odor component with high sensitivity by adding molybdenum oxide to the gas sensitive part.
〔実施例３〕
本発明例１の半導体式ガス検知素子と、比較例１の半導体式ガス検知素子とにおいて、シリコーンガス（ＯＭＣＴＳ：Octamethylcyclotetrasiloxane、１０ｐｐｍ）が存在する環境におけるガス感度の変化を調べた。検知対象のガスは、空気、エタノール（５〜１００ｐｐｍ）とした。
Example 3
The change in gas sensitivity in an environment in which silicone gas (OMCTS: Octamethylcyclotetrasiloxane, 10 ppm) was present in the semiconductor gas detection element of Invention Example 1 and the semiconductor gas detection element of Comparative Example 1 was examined. The gas to be detected was air and ethanol (5 to 100 ppm).
本発明例１の半導体式ガス検知素子による測定結果を図５、比較例１の半導体式ガス検知素子による測定結果を図６に示した。 The measurement result by the semiconductor type gas detection element of Example 1 of the present invention is shown in FIG. 5, and the measurement result by the semiconductor type gas detection element of Comparative Example 1 is shown in FIG.
図５より、本発明例１の半導体式ガス検知素子では、シリコーンガス存在下であっても安定した（ほぼ一定の）ガス感度が得られるものと認められた。一方、図６より、比較例１の半導体式ガス検知素子では、特にシリコーンガスの曝露初期において、ガス感度が急変するため、シリコーンガス存在下では不安定なガス感度を示すものと認められた。 From FIG. 5, it was recognized that the semiconductor type gas detection element of Example 1 of the present invention can obtain stable (substantially constant) gas sensitivity even in the presence of silicone gas. On the other hand, from FIG. 6, it was recognized that the semiconductor type gas detection element of Comparative Example 1 showed unstable gas sensitivity in the presence of silicone gas, since the gas sensitivity changed abruptly particularly in the initial exposure stage of silicone gas.
〔実施例４〕
実施例１で説明した本発明例１の半導体式ガス検知素子の作製方法において、使用した酸化スズの半導体ペーストを酸化インジウム（Ｉｎ2Ｏ3）の半導体ペーストに替えて半導体式ガス検知素子を作製した。このようにして得られた半導体式ガス検知素子（本発明例２：ガス感応部に２モル％のモリブデン酸化物を添加）をブリッジ回路に組み込み、被検知ガスに対する感度評価に使用した。
Example 4
In the manufacturing method of the semiconductor type gas detecting element of Example 1 of the present invention described in Example 1, the semiconductor paste of tin oxide used was replaced with the semiconductor paste of indium oxide (In 2 O 3 ) to manufacture a semiconductor type gas detecting element. did. The semiconductor gas detection element thus obtained (Invention Example 2: 2 mol% molybdenum oxide added to the gas sensitive part) was incorporated in a bridge circuit and used for sensitivity evaluation with respect to the gas to be detected.
〔実施例５〕
本発明例２の半導体式ガス検知素子と、比較例２として酸化インジウムを主成分とするガス感応部を有する半導体式ガス検知素子（ガス感応部にモリブデン酸化物を添加しない）とにおいて、各種ガスの感度（ＤＣ２．４Ｖ通電時（１０オーム負荷））を調べた。使用したガスは、エタノール、水素、トルエン、アセトン、酢酸エチルであった。
Example 5
Various gases in the semiconductor type gas detection element of Example 2 of the present invention and the semiconductor type gas detection element having a gas sensitive part mainly composed of indium oxide as Comparative Example 2 (no molybdenum oxide added to the gas sensitive part) The sensitivity (at 2.4 V DC energization (10 ohm load)) was examined. The gases used were ethanol, hydrogen, toluene, acetone and ethyl acetate.
本発明例２の半導体式ガス検知素子による測定結果を図７、比較例２の半導体式ガス検知素子による測定結果を図８に示した。 The measurement result by the semiconductor type gas detection element of Example 2 of the present invention is shown in FIG. 7, and the measurement result by the semiconductor type gas detection element of Comparative Example 2 is shown in FIG.
図７より、本発明例２の半導体式ガス検知素子では、におい成分であるエタノール、トルエン、アセトン、酢酸エチルに対するガス感度は増感されたものと認められた。一方、図８より、比較例２の半導体式ガス検知素子では、何れのガスのガス感度も殆ど増感せず、におい成分と可燃性ガスとにおいて、ガス感度の明瞭な差異は認められなかった。 From FIG. 7, it was recognized that the gas sensitivity to ethanol, toluene, acetone, and ethyl acetate, which are odor components, was sensitized in the semiconductor type gas detection element of Example 2 of the present invention. On the other hand, from FIG. 8, in the semiconductor gas detection element of Comparative Example 2, the gas sensitivity of any gas was hardly increased, and no clear difference in gas sensitivity was observed between the odor component and the combustible gas. .
〔実施例６〕
実施例１で説明した本発明例１の半導体式ガス検知素子の作製方法において、酸化スズの半導体を、モリブデン酸アンモン水溶液に含浸させる工程の後に、０．５モル/Ｌの硝酸鉛水溶液の液滴を含浸させる工程を追加し、乾燥後、白金コイルに通電して加熱分解処理を行い、モリブデン酸化物および鉛酸化物をガス感応部の表面に担持させた半導体式ガス検知素子を作製した。このようにして得られた半導体式ガス検知素子（本発明例３：ガス感応部に２モル％のモリブデン酸化物、０．５モル％の鉛酸化物を添加）をブリッジ回路に組み込み、被検知ガスに対する感度評価に使用した。
Example 6
In the method for producing a semiconductor type gas detection element according to Example 1 of the present invention described in Example 1, a solution of a 0.5 mol / L lead nitrate aqueous solution after the step of impregnating a tin oxide semiconductor with an ammonium molybdate aqueous solution. A step of impregnating the droplets was added, and after drying, a platinum coil coil was energized and subjected to thermal decomposition treatment to produce a semiconductor type gas detection element having molybdenum oxide and lead oxide supported on the surface of the gas sensitive part. The semiconductor gas detection element thus obtained (Invention Example 3: 2 mol% molybdenum oxide and 0.5 mol% lead oxide added to the gas sensitive part) is incorporated in the bridge circuit and detected. Used for gas sensitivity evaluation.
また、実施例１で説明した本発明例１の半導体式ガス検知素子の作製方法において、酸化スズの半導体をモリブデン酸アンモン水溶液に含浸させる工程に替えて、０．５モル/Ｌの硝酸鉛水溶液の液滴を含浸させる工程を行い、乾燥後、白金コイルに通電して加熱分解処理を行い、鉛酸化物をガス感応部の表面に担持させた半導体式ガス検知素子を作製した。このようにして得られた半導体式ガス検知素子（比較例３：ガス感応部に０．５モル％の鉛酸化物を添加）をブリッジ回路に組み込み、被検知ガスに対する感度評価に使用した。 Further, in the method for producing a semiconductor type gas detection element according to Example 1 of the present invention described in Example 1, a 0.5 mol / L lead nitrate aqueous solution was used instead of the step of impregnating a tin oxide semiconductor with an ammonium molybdate aqueous solution. A step of impregnating the liquid droplets was performed, and after drying, a platinum coil coil was energized and thermally decomposed to produce a semiconductor type gas detection element having lead oxide supported on the surface of the gas sensitive part. The semiconductor type gas detection element thus obtained (Comparative Example 3: 0.5 mol% of lead oxide added to the gas sensitive part) was incorporated in a bridge circuit and used for sensitivity evaluation with respect to the gas to be detected.
〔実施例７〕
本発明例３の半導体式ガス検知素子を使用して、各種ガスの感度（ＤＣ２．４Ｖ通電時（１０オーム負荷））を調べた。使用したガスは、エタノール、メタン、イソブタン、水素、一酸化炭素、トルエン、アセトン、酢酸エチルであった。結果を図９に示した。
Example 7
Using the semiconductor type gas detection element of Example 3 of the present invention, the sensitivity of various gases (at the time of DC 2.4 V energization (10 ohm load)) was examined. The gases used were ethanol, methane, isobutane, hydrogen, carbon monoxide, toluene, acetone, and ethyl acetate. The results are shown in FIG.
図９より、本発明例３の半導体式ガス検知素子では、におい成分であるエタノール、トルエン、アセトン、酢酸エチルに対するガス感度は、可燃性ガスのメタン・イソブタン・水素や、一酸化炭素に比べて増感されたものと認められた。よって、本発明の半導体式ガス検知素子は、ガス感応部にモリブデン酸化物および鉛酸化物を添加することにより、可燃性ガスの感度を低下させ、におい成分をより感度よく検出することができるものと認められた。 From FIG. 9, in the semiconductor type gas detection element of the present invention example 3, the gas sensitivity to ethanol, toluene, acetone, and ethyl acetate as odor components is higher than that of flammable gases such as methane, isobutane, hydrogen, and carbon monoxide. It was recognized that it was sensitized. Therefore, the semiconductor type gas detection element of the present invention can detect the odor component more sensitively by adding molybdenum oxide and lead oxide to the gas sensitive part, thereby reducing the sensitivity of the combustible gas. It was recognized.
また、他のにおい成分として、１−ブタノール、プロピオンアルデヒド、ブチルアルデヒド、ジエチルケトン、酢酸、キシレン、トリメチルアミン、メチルアミンについてもガス感度を調べた（図１０）。その結果、これらにおい成分についても、本発明の半導体式ガス検知素子によって感度よく検出することができるものと認められた。 As other odor components, gas sensitivity was also examined for 1-butanol, propionaldehyde, butyraldehyde, diethyl ketone, acetic acid, xylene, trimethylamine, and methylamine (FIG. 10). As a result, it was recognized that these odor components can also be detected with high sensitivity by the semiconductor gas detection element of the present invention.
比較例３の半導体式ガス検知素子を使用して、各種ガスの感度（ＤＣ２．４Ｖ通電時（１０オーム負荷））を調べた。使用したガスは、エタノール、水素、トルエン、アセトン、酢酸エチルであった。結果を図１１に示した。 Using the semiconductor type gas detection element of Comparative Example 3, the sensitivity of various gases (when DC 2.4 V was energized (10 ohm load)) was examined. The gases used were ethanol, hydrogen, toluene, acetone and ethyl acetate. The results are shown in FIG.
図１１より、比較例３の半導体式ガス検知素子では、何れのガスのガス感度も殆ど増感せず、におい成分と可燃性ガスとにおいて、ガス感度の明瞭な差異は認められなかった。即ち、比較例３の半導体式ガス検知素子のように、ガス感応部に鉛酸化物を添加しただけではにおい成分に対する感度の増感は殆ど認められず、モリブデン酸化物を添加することでにおい成分に対する感度の増感が認められる（図３，５，７，９）ことが判明した。 From FIG. 11, in the semiconductor type gas detection element of the comparative example 3, the gas sensitivity of any gas was hardly sensitized, and a clear difference in gas sensitivity was not recognized between the odor component and the combustible gas. That is, as in the semiconductor type gas detection element of Comparative Example 3, the addition of lead oxide to the gas sensitive part hardly shows an increase in sensitivity to the odor component, and the addition of molybdenum oxide causes the odor component. It was found that an increase in sensitivity was observed (FIGS. 3, 5, 7, and 9).
〔実施例８〕
本発明例１の半導体式ガス検知素子において、ガス感応部に添加するモリブデン酸化物の有効濃度を調べた。
Example 8
In the semiconductor type gas detection element of Example 1 of the present invention, the effective concentration of molybdenum oxide added to the gas sensitive part was examined.
ガス感応部の表面に担持されるモリブデン酸化物の含有量が０．００１〜３０モル％となるように、１１種類（表１）の半導体式ガス検知素子を製造した。これら半導体式ガス検知素子について、におい成分であるエタノール１００ｐｐｍ、アセトン１００ｐｐｍをそれぞれ検出した場合のガス感度を調べた。結果を表１および図１２示した。 Eleven types (Table 1) of semiconductor-type gas detection elements were manufactured so that the content of molybdenum oxide supported on the surface of the gas sensitive part was 0.001 to 30 mol%. About these semiconductor type gas detection elements, gas sensitivity was detected when 100 ppm of ethanol and 100 ppm of acetone were detected. The results are shown in Table 1 and FIG.
この結果、モリブデン酸化物の含有量が０．１モル％以上、特に０．５モル％以上において優れたガス感度を有するものと認められた。 As a result, it was recognized that excellent gas sensitivity was obtained when the content of molybdenum oxide was 0.1 mol% or more, particularly 0.5 mol% or more.
また、上記１１種類の半導体式ガス検知素子において、シリコーンガス（ＯＭＣＴＳ）が存在する環境におけるガス感度の変化を調べた。ガス感度の変化は、半導体式ガス検知素子をシリコーンガス１０ｐｐｍに対して２０時間曝露したときの、エタノール１００ｐｐｍの感度変化率（２０時間暴露時の測定値/初期測定値の比）で表した。結果を表２および図１３に示した。 In addition, in the 11 types of semiconductor gas detection elements, changes in gas sensitivity in an environment where silicone gas (OMCTS) is present were examined. The change in gas sensitivity was represented by the rate of change in sensitivity of 100 ppm ethanol (ratio of measured value / initial measured value when exposed to 20 hours) when the semiconductor gas detection element was exposed to 10 ppm of silicone gas for 20 hours. The results are shown in Table 2 and FIG.
半導体式ガス検知素子がシリコーンガスに曝露した前後において、ガス感度の変化率は１．０〜１．５程度であれば、良好なガス感度を有するものと認められる。モリブデン酸化物の含有量が０．５〜１０モル％の場合に、ガス感度の変化率が１．０〜１．５の範囲に収まるものと認められた。また、モリブデン酸化物の含有量が１〜１０モル％の場合に、ガス感度の変化率が１．０〜１．２の範囲に収まるため、より良好なガス感度を有するものと認められた。
従って、モリブデン酸化物の含有量が０．５〜１０モル％であれば、シリコーンガスが存在する環境でもにおい成分を正確に検出できることが判明した。
If the rate of change in gas sensitivity is about 1.0 to 1.5 before and after the semiconductor gas detection element is exposed to silicone gas, it is recognized that the gas detection element has good gas sensitivity. When the content of molybdenum oxide was 0.5 to 10 mol%, it was recognized that the rate of change in gas sensitivity was within the range of 1.0 to 1.5. Further, when the molybdenum oxide content was 1 to 10 mol%, the rate of change in gas sensitivity was within the range of 1.0 to 1.2, and thus it was recognized that the gas sensitivity was better.
Therefore, it was found that when the content of molybdenum oxide is 0.5 to 10 mol%, the odor component can be accurately detected even in an environment where silicone gas is present.
〔実施例９〕
本発明の半導体式ガス検知素子において、ガス感応部に添加する鉛酸化物の有効濃度を調べた。
Example 9
In the semiconductor type gas detection element of the present invention, the effective concentration of lead oxide added to the gas sensitive part was examined.
ガス感応部の表面に担持されるモリブデン酸化物の含有量を、０．５，２．０，１０モル％とした場合に、鉛酸化物の含有量を０．００５〜５モル％の範囲となるようにそれぞれ７種類（表３）の半導体式ガス検知素子を製造した（合計２１種類）。これら半導体式ガス検知素子について、エタノール１００ｐｐｍ、水素１００ｐｐｍをそれぞれ検出した場合のガス感度を調べた。実施例７より、ガス感応部にモリブデン酸化物に加えて鉛酸化物を添加した場合、可燃性ガスの感度を低下させ、におい成分をより感度よく検出することができるものと認められている。そのため、鉛酸化物の有効濃度は、におい成分の選択性が優れている範囲を適用すればよい。におい成分の選択性が優れている範囲は、可燃性ガス感度/エタノール感度の比を１以下とする。結果を表３に示した。 When the content of molybdenum oxide supported on the surface of the gas sensitive portion is 0.5, 2.0, and 10 mol%, the content of lead oxide is in the range of 0.005 to 5 mol%. 7 types (Table 3) of semiconductor type gas detection elements were manufactured in each case (total 21 types). About these semiconductor type gas detection elements, the gas sensitivity in the case of detecting 100 ppm of ethanol and 100 ppm of hydrogen was examined. From Example 7, it is recognized that when lead oxide is added to the gas sensitive part in addition to molybdenum oxide, the sensitivity of the combustible gas is reduced and the odor component can be detected with higher sensitivity. Therefore, the effective concentration of the lead oxide may be applied within a range where the selectivity of the odor component is excellent. In the range where the selectivity of the odor component is excellent, the ratio of combustible gas sensitivity / ethanol sensitivity is set to 1 or less. The results are shown in Table 3.
この結果、鉛酸化物の含有量を０．０１〜１モル％の範囲とすれば、水素感度/エタノール感度の比が１以下となるものと認められた。尚、鉛酸化物の含有量の上限値は、例えば、におい成分（エタノール）の最高感度（モリブデン酸化物の含有量が０．５モル％、鉛酸化物の含有量が０．５モル％の場合の感度１７０ｍＶ）の５０％以上を有する感度となる鉛酸化物の含有量のうち、最大ものとしてもよい。 As a result, it was recognized that the ratio of hydrogen sensitivity / ethanol sensitivity was 1 or less when the content of lead oxide was in the range of 0.01 to 1 mol%. The upper limit of the content of lead oxide is, for example, the highest sensitivity of the odor component (ethanol) (the content of molybdenum oxide is 0.5 mol%, the content of lead oxide is 0.5 mol%) Of the lead oxide content, the sensitivity may be 50% or more of the case sensitivity (170 mV).
従って、鉛酸化物の含有量が０．０１〜１モル％の範囲であれば、可燃性ガスの感度を低下させ、におい成分をより感度よく検出することができることが判明した。 Therefore, it has been found that when the lead oxide content is in the range of 0.01 to 1 mol%, the sensitivity of the combustible gas is reduced and the odor component can be detected with higher sensitivity.
本発明の半導体式ガス検知素子は、特に、におい成分の検知に利用できる。 The semiconductor gas detection element of the present invention can be used particularly for detection of odor components.
Ｒｓ 半導体式ガス検知素子
１ 貴金属線材
２ 貴金属線材
Rs Semiconductor type
Claims (4)
前記ガス感応部にモリブデン酸化物を添加した半導体式ガス検知素子。 A semiconductor type gas sensing element comprising a tin oxide or indium oxide sintered over a noble metal wire as a main component, and having a gas sensitive part in contact with a gas to be sensed,
A semiconductor type gas detection element in which molybdenum oxide is added to the gas sensitive part.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0545319A (en) * | 1991-08-21 | 1993-02-23 | New Cosmos Electric Corp | Semiconductor type ammonia gas sensor |
| JPH0587758A (en) * | 1991-09-27 | 1993-04-06 | New Cosmos Electric Corp | Semiconductor type hydrogen sulfide sensor |
| JPH063310A (en) * | 1992-06-16 | 1994-01-11 | Figaro Eng Inc | Gas sensor |
| JPH08122288A (en) * | 1994-10-26 | 1996-05-17 | Kurabe Ind Co Ltd | Gas detection element |
| JPH08271465A (en) * | 1995-03-29 | 1996-10-18 | New Cosmos Electric Corp | Ammonia gas sensor and its manufacture |
| JP2001318069A (en) * | 2000-05-10 | 2001-11-16 | Matsushita Electric Ind Co Ltd | Expired gas analytical device |
| JP2008241430A (en) * | 2007-03-27 | 2008-10-09 | New Cosmos Electric Corp | Semiconductor type gas sensing element |
-
2012
- 2012-02-10 JP JP2012027709A patent/JP5906531B2/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0545319A (en) * | 1991-08-21 | 1993-02-23 | New Cosmos Electric Corp | Semiconductor type ammonia gas sensor |
| JPH0587758A (en) * | 1991-09-27 | 1993-04-06 | New Cosmos Electric Corp | Semiconductor type hydrogen sulfide sensor |
| JPH063310A (en) * | 1992-06-16 | 1994-01-11 | Figaro Eng Inc | Gas sensor |
| JPH08122288A (en) * | 1994-10-26 | 1996-05-17 | Kurabe Ind Co Ltd | Gas detection element |
| JPH08271465A (en) * | 1995-03-29 | 1996-10-18 | New Cosmos Electric Corp | Ammonia gas sensor and its manufacture |
| JP2001318069A (en) * | 2000-05-10 | 2001-11-16 | Matsushita Electric Ind Co Ltd | Expired gas analytical device |
| JP2008241430A (en) * | 2007-03-27 | 2008-10-09 | New Cosmos Electric Corp | Semiconductor type gas sensing element |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015020085A1 (en) * | 2013-08-09 | 2015-02-12 | 新コスモス電機株式会社 | Environment monitoring system |
| CN105492896A (en) * | 2013-08-09 | 2016-04-13 | 新宇宙电机株式会社 | Environment monitoring system |
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