JP2013153034A - Bonding pad and integrated circuit having plural bonding pad structures - Google Patents

Bonding pad and integrated circuit having plural bonding pad structures Download PDF

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JP2013153034A
JP2013153034A JP2012012716A JP2012012716A JP2013153034A JP 2013153034 A JP2013153034 A JP 2013153034A JP 2012012716 A JP2012012716 A JP 2012012716A JP 2012012716 A JP2012012716 A JP 2012012716A JP 2013153034 A JP2013153034 A JP 2013153034A
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bonding pad
opening
insulating layer
integrated circuit
gold bump
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Yu-Ru Yang
毓儒 楊
Chi Wang Lo
智宏 盧
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ILI Techonology Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member

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Abstract

PROBLEM TO BE SOLVED: To provide a structural body in which a gold bump of a bonding pad structure has a flat surface and which has better conductivity with an electrode disposed on a glass substrate after pressed together with the glass substrate.SOLUTION: A bonding pad structure 412 disposed in an integrated circuit includes a connection pad, an insulation layer and a gold bump. The connection pad is formed on the integrated circuit. The insulation layer is formed on the connection pad and has only one opening, and at least a dent is included in a shape of the opening. The gold bump is formed on the insulation layer and electrically connected to the connection pad through the opening of the insulation layer.

Description

本発明は、ボンディングパッド構造及び特に集積回路上に配置され、チップオングラス（ＣＯＧ）及びチップオンフィルム（ＴＯＦ）パッケージに適用されるボンディングパッド構造に関する。   The present invention relates to a bonding pad structure, and more particularly to a bonding pad structure disposed on an integrated circuit and applied to chip on glass (COG) and chip on film (TOF) packages.

図１は、１つのＣＯＧ構造１００を示す。図１から、前記ＣＯＧ構造１００は、ドライバ集積回路１１０、異方性導電フィルム（ＡＣＦ）１２０及びガラス基板１３０を含み、前記ドライバＩＣ１１０は複数のボンディングパッド構造１１２を含み、前記ＡＣＦ１２０は接着剤１２２及び導電粒子１２４を含み、さらに、前記ボンディングパッド構造１１２に対応し前記ガラス基板１３０上に形成される複数の電極１３２を含む。   FIG. 1 shows one COG structure 100. 1, the COG structure 100 includes a driver integrated circuit 110, an anisotropic conductive film (ACF) 120 and a glass substrate 130, and the driver IC 110 includes a plurality of bonding pad structures 112, and the ACF 120 includes an adhesive 122. And a plurality of electrodes 132 corresponding to the bonding pad structure 112 and formed on the glass substrate 130.

前記ＣＯＧボンディング工程においては、第１に前記ＡＣＦ１２０を前記ガラス基板１３０上に配置する。さらに前記ドライバＩＣ１１０の前記ボンディングパッド構造１１２を前記ガラス基板１３０上に配列させ、前記ドライバＩＣ１１０と前記ガラス基板１３０とを一緒に特定の温度、速度及び圧力でプレスして、前記ドライバＩＣ１１０の前記ボンディングパッド構造１１２を電気的に前記ガラス基板１３０の前記電極へ、前記ＡＣＦ１２０の前記導電粒子１２４を介して接続し、かつ前記ドライバＩＣ１１０を前記接着剤１２２を介して前記ガラス基板１３０へ接着する。   In the COG bonding process, first, the ACF 120 is disposed on the glass substrate 130. Further, the bonding pad structure 112 of the driver IC 110 is arranged on the glass substrate 130, and the driver IC 110 and the glass substrate 130 are pressed together at a specific temperature, speed, and pressure, and the bonding of the driver IC 110 is performed. The pad structure 112 is electrically connected to the electrode of the glass substrate 130 via the conductive particles 124 of the ACF 120, and the driver IC 110 is bonded to the glass substrate 130 via the adhesive 122.

さらに液晶表示装置（ＬＣＤ）の高解像度化により、前記ドライバＩＣのピン数（即ち前記ボンディングパッド構造１１２の数）はますます増加し、２つのボンディングパッド構造間のピッチはますます小さくなっている。前記ボンディングパッド構造１１２のより小さいピッチを考慮して、より小さい導電粒子（約３〜４μｍ）を持つ前記ＡＣＦ１２０が２つのボンディングパッド構造１１２間の短絡を防止するために使用される。   Furthermore, as the resolution of a liquid crystal display (LCD) is increased, the number of pins of the driver IC (that is, the number of bonding pad structures 112) is increasing and the pitch between the two bonding pad structures is becoming smaller. . In view of the smaller pitch of the bonding pad structure 112, the ACF 120 with smaller conductive particles (about 3-4 μm) is used to prevent a short circuit between the two bonding pad structures 112.

図３には図１及び図２で示されるボンディングパッド構造１１２の断面図が示される。図３に示されるように、前記ボンディングパッド構造１１２は接続パッド３０２、前記接続パッド上に形成される絶縁層３０４及び前記接続パッド３０２と前記絶縁層３０４上に形成される金バンプ３０６を含む。前記接続パッド３０２と前記絶縁層３０４上に形成される前記金バンプ３０６の形成は、前記金バンプ３０６の表面をへこませる。従って、前記導電粒子のサイズがあまりに小さい場合には、前記ドライバＩＣ１１０の前記ボンディングパッド構造１１２と前記ガラス基板１３０の前記電極１３２との間の導電性に影響を与える可能性がある。というのは、前記ＣＯＧパッケージが形成される際に十分な導電粒子が分配されないからである。   FIG. 3 shows a cross-sectional view of the bonding pad structure 112 shown in FIGS. As shown in FIG. 3, the bonding pad structure 112 includes a connection pad 302, an insulating layer 304 formed on the connection pad, and a gold bump 306 formed on the connection pad 302 and the insulating layer 304. The formation of the gold bump 306 formed on the connection pad 302 and the insulating layer 304 causes the surface of the gold bump 306 to be dented. Therefore, if the size of the conductive particles is too small, the conductivity between the bonding pad structure 112 of the driver IC 110 and the electrode 132 of the glass substrate 130 may be affected. This is because sufficient conductive particles are not distributed when the COG package is formed.

米国特許出願公開第２００７／００４５８７１号US Patent Application Publication No. 2007/0045871

本発明の課題は、ボンディングパッド構造を提供することであり、前記ボンディングパッド構造の金バンプが平坦表面を有し、ガラス基板と共にプレスされた後前記ガラス基板上に配置される電極とのよりよい導電性を有するものである。   It is an object of the present invention to provide a bonding pad structure, the gold bumps of the bonding pad structure having a flat surface, and better with electrodes placed on the glass substrate after being pressed together with the glass substrate It has conductivity.

本発明の１つの実施態様によれば、集積回路上に配置されるボンディングパッド構造は、接続パッド、絶縁層及び金バンプを含む。前記接続パッドは前記集積回路上に形成される。前記絶縁層は前記接続パッド上に形成され、前記絶縁層は唯１つの開口部を持ち、前記開口部の形状は少なくともへこみを含む。前記金バンプは前記絶縁層上に形成され、前記金バンプは、前記絶縁層の前記開口部を通じて前記接続パッドへ電気的に接続される。   According to one embodiment of the present invention, the bonding pad structure disposed on the integrated circuit includes a connection pad, an insulating layer, and a gold bump. The connection pad is formed on the integrated circuit. The insulating layer is formed on the connection pad, the insulating layer has only one opening, and the shape of the opening includes at least a dent. The gold bump is formed on the insulating layer, and the gold bump is electrically connected to the connection pad through the opening of the insulating layer.

本発明の他の実施態様によれば、集積回路は複数のボンディングパッド構造を含み、前記ボンディングパッド構造のそれぞれが、接続パッド、絶縁層及び金バンプを含む。前記接続パッドは前記集積回路上に形成される。前記絶縁層は前記接続パッド上に形成され、前記絶縁層は唯１つの開口部を持ち、前記開口部の形状は少なくともへこみを含む。前記金バンプは前記絶縁層上に形成され、前記絶縁層の前記開口部を通じて前記接続パッドへ電気的に接続される。   According to another embodiment of the present invention, the integrated circuit includes a plurality of bonding pad structures, each of the bonding pad structures including a connection pad, an insulating layer, and a gold bump. The connection pad is formed on the integrated circuit. The insulating layer is formed on the connection pad, the insulating layer has only one opening, and the shape of the opening includes at least a dent. The gold bump is formed on the insulating layer and electrically connected to the connection pad through the opening of the insulating layer.

当業者にとって、本発明のこれらの及び他の課題が、下の種々の図面を参照して説明される好ましい実施態様についての詳細な説明を読むことで、明らかとなることは疑う余地がない。   For those skilled in the art, these and other objects of the present invention will no doubt become apparent upon reading the detailed description of the preferred embodiments described with reference to the various figures below.

図１は、１つのＣＯＧ構造を示す。FIG. 1 shows one COG structure. 図２は、プレスされたＣＯＧ構造を示す。FIG. 2 shows a pressed COG structure. 図３は、図１及び図２のボンディングパッド構造の断面図を示す。FIG. 3 shows a cross-sectional view of the bonding pad structure of FIGS. 図４は、本発明の１つの実施態様によるＣＯＧ構造を示す図である。FIG. 4 is a diagram illustrating a COG structure according to one embodiment of the present invention. 図５は、本発明の１つの実施態様によるボンディングパッド構造を説明する図である。FIG. 5 is a diagram illustrating a bonding pad structure according to one embodiment of the present invention. 図６は、「Ｏ」形状を持つ図４に示される絶縁層の開口部を示す。6 shows an opening in the insulating layer shown in FIG. 4 having an “O” shape. 図７は、「Ｓ」形状を持つ図４に示される絶縁層の開口部を示す。FIG. 7 shows an opening in the insulating layer shown in FIG. 4 having an “S” shape. 図８は、「魚骨（ｆｉｓｈ−ｂｏｎｅ）」形状を持つ図４示される絶縁層の開口部を示す。FIG. 8 shows an opening in the insulating layer shown in FIG. 4 having a “fish-bone” shape.

図４には、本発明の１つの実施態様によるＣＯＧ構造４００を説明する図が示される。図４によれば、前記ＣＯＧ構造４００は、ドライバＩＣ４１０、ＡＣＦ４２０及びガラス基板４３０を含み、前記ドライバＩＣ４１０は複数のボンディングパッド構造４１２を含み、前記ＡＣＦ４２０は接着剤４２２と導電粒子４２４を含み、及び前記ボンディングパッド構造４１２に対応する複数の電極４３２が前記ガラス基板４３０上に配置されている。前記ドライバＩＣ４１０の前記ボンディングパッド構造４１２は、前記ＡＣＦ４２０の前記導電粒子４２４を介して前記ガラス基板４３０の前記電極４３２へ接続され、前記ドライバＩＣ４１０は前記接着剤４２２により記ガラス基板４３０へ接着されている。   FIG. 4 shows a diagram illustrating a COG structure 400 according to one embodiment of the present invention. According to FIG. 4, the COG structure 400 includes a driver IC 410, an ACF 420 and a glass substrate 430, the driver IC 410 includes a plurality of bonding pad structures 412, the ACF 420 includes an adhesive 422 and conductive particles 424, and A plurality of electrodes 432 corresponding to the bonding pad structure 412 are disposed on the glass substrate 430. The bonding pad structure 412 of the driver IC 410 is connected to the electrode 432 of the glass substrate 430 through the conductive particles 424 of the ACF 420, and the driver IC 410 is bonded to the glass substrate 430 by the adhesive 422. Yes.

図５は、本発明の１つの実施態様によるボンディングパッド構造４１２を説明する図である。図５に示されるように、前記ボンディングパッド構造４１２は接続パッド５０２、前記接続パッド５０２上に形成される絶縁層５０４及び前記接続パッド５０２と前記絶縁層５０４上に形成される金バンプを含み、前記絶縁層５０４は唯１つの開口部を持ち、前記開口部が少なくともへこみを含む。例えば図６、７及び８に示されるように、前記絶縁層５０４の前記開口部６０２、７０２、８０２は、「Ｏ」形状、「Ｓ」形状及び「魚骨」形状を示す。さらに前記金バンプ５０６は前記絶縁層５０４及び開口部６０２、７０２、８０２上に直接形成され、前記金バンプ５０６は記開口部６０２、７０２、８０２を通じて前記接続パッド５０３へ電気的に接続される。   FIG. 5 illustrates a bonding pad structure 412 according to one embodiment of the present invention. As shown in FIG. 5, the bonding pad structure 412 includes a connection pad 502, an insulating layer 504 formed on the connection pad 502, and gold bumps formed on the connection pad 502 and the insulating layer 504. The insulating layer 504 has only one opening, and the opening includes at least a dent. For example, as shown in FIGS. 6, 7, and 8, the openings 602, 702, 802 of the insulating layer 504 exhibit an “O” shape, an “S” shape, and a “fishbone” shape. Further, the gold bump 506 is directly formed on the insulating layer 504 and the openings 602, 702, 802, and the gold bump 506 is electrically connected to the connection pad 503 through the openings 602, 702, 802.

さらに図６〜８には、「Ｏ」形状、「Ｓ」形状及び「魚骨」形状が示されているが、これらの実施態様により本発明が限定されることを意味するものではない。本発明の他の実施態様では、前記絶縁層５０４の開口部は、「Ｏ」形状、「Ｓ」形状及び「魚骨」形状のあらゆる組み合わせの形状が可能であり（例えば、前記開口部が、「Ｏ」と「魚骨」の形状を共に持つ）、またこれらの単純な変更であり得る（例えば、「Ｕ」形状や逆「Ｓ」形状など）。言い換えると、前記開口部がへこみを持つ限り、これらの設計上の変形は本発明の範囲に入る。さらにここで「へこみ」とは図６〜８に示される直角へこみである必要はなく、直角でないへこみ又は曲線へこみも含むものである。   Further, FIGS. 6 to 8 show an “O” shape, an “S” shape, and a “fishbone” shape, but it is not meant that the present invention is limited by these embodiments. In another embodiment of the present invention, the opening of the insulating layer 504 may have any combination of “O” shape, “S” shape, and “fishbone” shape (eg, the opening portion may be It can have both “O” and “fishbone” shapes), and can be a simple modification of these (eg, “U” shape or inverted “S” shape). In other words, these design variations are within the scope of the present invention as long as the opening has a dent. Further, the “dent” here does not need to be a right angle recess shown in FIGS. 6 to 8 and includes a non-right angle recess or a curved recess.

さらに、前記金バンプ５０６の材料には、銅、ニッケル、金又はこれらのすべての組み合わせ又はＳｎ−Ｐｂ合金が含まれ、これは前記絶縁層上にめっきにより形成され得る。   Further, the material of the gold bump 506 includes copper, nickel, gold, or a combination of all of these or Sn—Pb alloy, which can be formed on the insulating layer by plating.

前記絶縁層５０４の開口部が図６〜８に示される開口部のようなへこみを少なくとも持つことから、前記金バンプ５０６の高さの落差は大きく低減される。同じ表面を持つ前記金バンプを１例とすると、図３で示される従来のボンディングパッド構造の金バンプの高さ落差が２μｍである場合、本発明のボンディングパッド構造の前記金バンプの高さ落差は１μｍ未満である。従って前記金バンプの表面はより平坦であり、前記ドライバＩＣ４１０及び前記ガラス基板４３０が共にプレスされる際には十分な数の導電粒子４２４が分配され、その結果前記ボンディングパッド構造４１２及び前記電極４３２間の導電性を改善する。   Since the opening of the insulating layer 504 has at least a dent such as the opening shown in FIGS. 6 to 8, the drop in the height of the gold bump 506 is greatly reduced. Taking the gold bump having the same surface as an example, if the height drop of the gold bump of the conventional bonding pad structure shown in FIG. 3 is 2 μm, the height drop of the gold bump of the bonding pad structure of the present invention. Is less than 1 μm. Accordingly, the surface of the gold bump is flatter, and when the driver IC 410 and the glass substrate 430 are pressed together, a sufficient number of conductive particles 424 are distributed, so that the bonding pad structure 412 and the electrode 432 are distributed. Improve the conductivity between.

前記ボンディングパッド構造４１２の金バンプの高さ落差が非常に小さいことから、前記ＡＣＦ４２０は導電性を失うことなく小さな導電粒子４２を選ぶことができる。従って、前記ボンディングパッド構造４１２のピッチはさらに低減され、前記ドライバＩＣ４１０上の金バンプの密度を上げることができる。   Since the height drop of the gold bump of the bonding pad structure 412 is very small, the ACF 420 can select small conductive particles 42 without losing conductivity. Therefore, the pitch of the bonding pad structure 412 is further reduced, and the density of gold bumps on the driver IC 410 can be increased.

さらに、一例としての前記開示のＣＯＧパッケージを説明したが、しかし本発明の前記ドライバＩＣ４１０はまた、ＣＯＦパッケージにも適用可能である。即ち、図４に示されるガラス基板４３０は複数の電極を有するフィルムと置換され、前記ドライバＩＣ４１０及び前記フィルムは共にＡＣＦ又は共晶接合によりプレスされ得る。   Furthermore, the disclosed COG package has been described as an example, but the driver IC 410 of the present invention is also applicable to a COF package. That is, the glass substrate 430 shown in FIG. 4 is replaced with a film having a plurality of electrodes, and both the driver IC 410 and the film can be pressed by ACF or eutectic bonding.

まとめると、前記ボンディングパッド構造の前記絶縁層は、唯１つの開口部を持ち、前記開口部は少なくともへこみを含む。従って、前記金バンプの表面はより平面となり、前記ボンディングパッド構造と電極間の導電性がさらによくなる。   In summary, the insulating layer of the bonding pad structure has only one opening, and the opening includes at least a dent. Therefore, the surface of the gold bump is flatter, and the conductivity between the bonding pad structure and the electrode is further improved.

当業者は、本発明の教示内の範囲にある多くの本装置及び方法の変形・改良につき想到することができるであろう。
Those skilled in the art will envision many variations and modifications of the present apparatus and method which are within the scope of the present teachings.

Claims (8)

集積回路上に配置されるボンディングパッド構造であり：
前記集積回路上に形成される接続パッドと；
前記接続パッド上に形成される絶縁層であり、前記絶縁層が唯１つの開口部を有し、前記開口部の形状が少なくともへこみを持つ絶縁層と：及び
前記絶縁層上に形成される金バンプであり、前記金バンプが前記絶縁層の開口部を通じて前記接続パッドへ電気的に接続される、金バンプを含む、ボンディングパッド構造。 A bonding pad structure placed on an integrated circuit:
Connection pads formed on the integrated circuit;
An insulating layer formed on the connection pad, wherein the insulating layer has only one opening, and the shape of the opening has at least a dent; and gold formed on the insulating layer A bonding pad structure including a gold bump, wherein the gold bump is electrically connected to the connection pad through an opening of the insulating layer. 請求項１に記載のボンディングパッド構造であり、前記開口部が「Ｏ」形状の開口領域を含む、ボンディングパッド構造。   The bonding pad structure according to claim 1, wherein the opening includes an opening region having an “O” shape. 請求項１に記載のボンディングパッド構造であり、前記開口部が「Ｓ」形状の開口領域を含む、ボンディングパッド構造。   The bonding pad structure according to claim 1, wherein the opening includes an “S” -shaped opening region. 請求項１に記載のボンディングパッド構造であり、前記開口部が「魚骨」形状の開口領域を含む、ボンディングパッド構造。   The bonding pad structure according to claim 1, wherein the opening includes an opening region having a “fishbone” shape. 複数のボンディングパッド構造を含む集積回路であり、前記ボンディングパッド構造のそれぞれが：
前記集積回路上に形成される接続パッドと；
前記接続パッド上に形成される絶縁層であり、前記絶縁層が唯１つの開口部を有し、前記開口部の形状が少なくとも１つのへこみを持つ絶縁層と：及び
前記絶縁層上に形成される金バンプであり、前記金バンプが前記絶縁層の開口部を通じて前記接続パッドへ電気的に接続される、金バンプを、
含む集積回路。 An integrated circuit including a plurality of bonding pad structures, each of the bonding pad structures:
Connection pads formed on the integrated circuit;
An insulating layer formed on the connection pad, wherein the insulating layer has only one opening, and the shape of the opening has at least one indentation: and formed on the insulating layer A gold bump, wherein the gold bump is electrically connected to the connection pad through an opening in the insulating layer.
Including integrated circuits. 請求項５に記載の集積回路であり、前記開口部が「Ｏ」形状の開口領域を含む、集積回路。   6. The integrated circuit of claim 5, wherein the opening includes an “O” shaped opening region. 請求項５に記載の集積回路であり、前記開口部が「Ｓ」形状の開口領域を含む、集積回路。   6. The integrated circuit of claim 5, wherein the opening includes an “S” shaped opening region. 請求項５に記載の集積回路であり、前記開口部が「魚骨」形状の開口領域を含む、集積回路。
6. The integrated circuit according to claim 5, wherein the opening includes an opening region having a “fishbone” shape.
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