JP2013138202A - スピン注入書き込み操作を使用してセルに書き込むための自己参照磁気ランダムアクセスメモリセル及び方法 - Google Patents
スピン注入書き込み操作を使用してセルに書き込むための自己参照磁気ランダムアクセスメモリセル及び方法 Download PDFInfo
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
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- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Abstract
【解決手段】磁気トンネル接合2が、第1記憶磁化方向234を呈する第1強磁性層231と第2記憶磁化方向235を呈する第2強磁性層232とを有する記憶層23、第1強磁性層231と第2強磁性層232とを分離する非磁性の接合層233、自由なセンス磁化方向を呈するセンス層21、及びこのセンス層とこの記憶層との間に挿入されたトンネル障壁層22から構成されていて、記憶層23とセンス層21との間の双極子カップリングが、ほぼ零であるように、第1強磁性層231と第2強磁性層232とが配置されている。スピン分極電流を磁気トンネル接合2中に通電することによって第2強磁性磁化方向235を切り替えることから成り、スピン分極電流31が、センス層21中に通電するときに、センス磁化方向の方向に応じて分極される。
【選択図】図1
Description
本発明は、スピン注入書き込み操作を使用して低消費電力で磁気参照磁気ランダムアクセスメモリセルに書き込むための方法に関する。
一般に、いわゆる自己参照読み出し操作を使用するMRAMセルは、磁化方向が第1安定方向から第2安定方向に変更され得る当該磁化方向を呈する磁気記憶層と薄い絶縁層と双方向の磁化方向を呈するセンス層とから形成された磁気トンネル接合を有する。自己参照MRAMセルは、書き込み操作及び読み出し操作を低い消費電力及び向上された速度で実行することを可能にする。さらに、自己参照MRAMセルは、歩留りの少ない機能メモリを製作するために有益であり且つ高温及びセキュリティーアプリケーションに対して有益である。
本発明は、磁気トンネル接合を有する自己参照MRAMセルに書き込むための方法に関する。この磁気トンネル接合は、第1記憶磁化方向を呈する第1強磁性層と第2記憶磁化方向を呈する第2強磁性層とを有する記憶層、この第1強磁性層とこの第2強磁性層とを分離する非磁性の接合層、自由なセンス磁化方向を呈するセンス層、及びこのセンス層とこの記憶層との間に挿入されたトンネル障壁層から構成される。前記記憶層と前記センス層との間の双極子カップリングが、ほぼ零であるように、前記第1強磁性層と前記第2強磁性層とが配置される。当該方法は、スピン分極電流を前記磁気トンネル接合中に通電することによって当該第2強磁性磁化方向を切り替えることから成り得る。この場合、当該スピン分極電流が、前記センス層中に通電するときに、前記センス磁化方向の方向に応じて分極される。
本発明は、例によって与えられ且つ図面によって示された一実施の形態の説明を用いてより良好に理解される。
2 磁気トンネル接合
21 センス層
211 センス磁化方向
22 トンネル障壁層
23 記憶層
231 第1強磁性層
232 第2強磁性層
233 スペーサー層
234 第1強磁性磁化方向
235 第2強磁性磁化方向
24 反強磁性記憶層
31 スピン分極電流
32 センス電流
4 界磁線
41 界磁電流
42 磁界
5 電流線
Claims (6)
- 磁気トンネル接合を有する自己参照磁気ランダムアクセスメモリセルに書き込むための方法であって、
前記磁気トンネル接合が、第1記憶磁化方向を呈する第1強磁性層と第2記憶磁化方向を呈する第2強磁性層とを有する記憶層、この第1強磁性層とこの第2強磁性層とを分離する非磁性の接合層、自由なセンス磁化方向を呈するセンス層、及びこのセンス層とこの記憶層との間に挿入されたトンネル障壁層から構成されていて、
前記記憶層と前記センス層との間の双極子カップリングが、ほぼ零であるように、前記第1強磁性層と前記第2強磁性層とが配置されている当該方法において、
当該方法は、スピン分極電流を前記磁気トンネル接合中に通電することによって当該第2強磁性磁化方向を切り替えることから成り、
当該スピン分極電流が、前記センス層中に通電するときに、前記センス磁化方向の方向に応じて分極される当該方法。 - 前記センス磁化方向の方向は、前記第2強磁性磁化方向を切り替える前に、磁界を印加することによって決定される請求項1に記載の方法。
- 前記センス層は、前記センス磁化方向の方向を安定化するために形状異方性又は結晶磁気異方性を有する請求項2に記載の方法。
- 前記第2強磁性磁化方向の切り替え方向は、前記スピン分極電流の極性によって決定される請求項1に記載の方法。
- 前記センス磁化方向の方向は、前記第2強磁性磁化方向の切り替え中に磁界を印加することによって決定される請求項1に記載の方法。
- 前記センス磁化方向の方向は、印加された前記磁界の方向によって決定される請求項5に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP11290591.4A EP2608208B1 (en) | 2011-12-22 | 2011-12-22 | Self-referenced MRAM cell and method for writing the cell using a spin transfer torque write operation |
EP11290591.4 | 2011-12-22 |
Publications (1)
Publication Number | Publication Date |
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JP2013138202A true JP2013138202A (ja) | 2013-07-11 |
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JP2012279040A Pending JP2013138202A (ja) | 2011-12-22 | 2012-12-21 | スピン注入書き込み操作を使用してセルに書き込むための自己参照磁気ランダムアクセスメモリセル及び方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8988935B2 (ja) |
EP (1) | EP2608208B1 (ja) |
JP (1) | JP2013138202A (ja) |
KR (1) | KR20130079198A (ja) |
CN (1) | CN103311432B (ja) |
RU (1) | RU2012155911A (ja) |
TW (1) | TWI555018B (ja) |
Cited By (2)
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---|---|---|---|---|
JP2013145626A (ja) * | 2012-01-16 | 2013-07-25 | Crocus Technology Sa | 低減した界磁電流による熱アシスト書込オペレーションを用いたmramセル及びmramセルの書込方法 |
CN106025063A (zh) * | 2016-05-19 | 2016-10-12 | 华为技术有限公司 | 磁隧道结以及磁存储器 |
Families Citing this family (7)
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US9495989B2 (en) * | 2013-02-06 | 2016-11-15 | International Business Machines Corporation | Laminating magnetic cores for on-chip magnetic devices |
EP2775480B1 (en) * | 2013-03-07 | 2018-11-14 | Crocus Technology S.A. | Self-referenced TAS-MRAM cell that can be read with reduced power consumption |
EP3002758B1 (en) * | 2014-10-03 | 2017-06-21 | Crocus Technology S.A. | Self-referenced MRAM cell and magnetic field sensor comprising the self-referenced MRAM cell |
EP3045927B1 (en) * | 2015-01-16 | 2017-12-20 | Crocus Technology | Mlu based magnetic sensor having improved programmability and sensitivity |
JP6233722B2 (ja) * | 2015-06-22 | 2017-11-22 | Tdk株式会社 | 磁界発生体、磁気センサシステムおよび磁気センサ |
US10788547B2 (en) * | 2019-01-17 | 2020-09-29 | Sandisk Technologies Llc | Voltage-controlled interlayer exchange coupling magnetoresistive memory device and method of operating thereof |
CN113451505B (zh) * | 2021-02-25 | 2023-07-07 | 北京航空航天大学 | 磁性随机存储单元、存储器及设备 |
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- 2012-12-21 RU RU2012155911/08A patent/RU2012155911A/ru not_active Application Discontinuation
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Also Published As
Publication number | Publication date |
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EP2608208B1 (en) | 2015-02-11 |
US20130163318A1 (en) | 2013-06-27 |
CN103311432B (zh) | 2016-05-25 |
EP2608208A1 (en) | 2013-06-26 |
TWI555018B (zh) | 2016-10-21 |
US8988935B2 (en) | 2015-03-24 |
CN103311432A (zh) | 2013-09-18 |
TW201337923A (zh) | 2013-09-16 |
RU2012155911A (ru) | 2014-06-27 |
KR20130079198A (ko) | 2013-07-10 |
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