JP2013118277A - Ｌｅｄパターン付き基板の加工方法 - Google Patents

Ｌｅｄパターン付き基板の加工方法 Download PDF

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Publication number
JP2013118277A
JP2013118277A JP2011264909A JP2011264909A JP2013118277A JP 2013118277 A JP2013118277 A JP 2013118277A JP 2011264909 A JP2011264909 A JP 2011264909A JP 2011264909 A JP2011264909 A JP 2011264909A JP 2013118277 A JP2013118277 A JP 2013118277A
Authority
JP
Japan
Prior art keywords
substrate
led pattern
starting point
led
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011264909A
Other languages
English (en)
Japanese (ja)
Inventor
Fumiyoshi Nakatani
郁祥 中谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsuboshi Diamond Industrial Co Ltd
Original Assignee
Mitsuboshi Diamond Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsuboshi Diamond Industrial Co Ltd filed Critical Mitsuboshi Diamond Industrial Co Ltd
Priority to JP2011264909A priority Critical patent/JP2013118277A/ja
Priority to TW101142492A priority patent/TWI478377B/zh
Priority to KR1020120130909A priority patent/KR101437229B1/ko
Priority to CN201210495229.8A priority patent/CN103128449B/zh
Publication of JP2013118277A publication Critical patent/JP2013118277A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Led Devices (AREA)
JP2011264909A 2011-12-02 2011-12-02 Ｌｅｄパターン付き基板の加工方法 Pending JP2013118277A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011264909A JP2013118277A (ja) 2011-12-02 2011-12-02 Ｌｅｄパターン付き基板の加工方法
TW101142492A TWI478377B (zh) 2011-12-02 2012-11-14 具ｌｅｄ圖案之基板之加工方法及具ｌｅｄ圖案之基板之加工系統
KR1020120130909A KR101437229B1 (ko) 2011-12-02 2012-11-19 Led 패턴 형성 기판의 가공 방법 및 led 패턴 형성 기판의 가공 시스템
CN201210495229.8A CN103128449B (zh) 2011-12-02 2012-11-28 带有led图案的基板的加工方法及带有led图案的基板的加工系统

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011264909A JP2013118277A (ja) 2011-12-02 2011-12-02 Ｌｅｄパターン付き基板の加工方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013049760A Division JP2013118413A (ja) 2013-03-13 2013-03-13 Ｌｅｄチップ

Publications (1)

Publication Number Publication Date
JP2013118277A true JP2013118277A (ja) 2013-06-13

Family

ID=48489246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011264909A Pending JP2013118277A (ja) 2011-12-02 2011-12-02 Ｌｅｄパターン付き基板の加工方法

Country Status (4)

Country Link
JP (1) JP2013118277A (ko)
KR (1) KR101437229B1 (ko)
CN (1) CN103128449B (ko)
TW (1) TWI478377B (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109192881B (zh) * 2018-09-21 2021-02-23 武汉华星光电半导体显示技术有限公司 有机发光二极管显示面板及其切割方法
CN109671746B (zh) * 2018-12-11 2021-04-27 武汉华星光电半导体显示技术有限公司 有机发光二极管显示面板及显示装置
CN111975215A (zh) * 2019-05-23 2020-11-24 中国石油天然气股份有限公司 激光加工装置及方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004165227A (ja) * 2002-11-08 2004-06-10 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子の製造方法
JP2006135309A (ja) * 2004-10-07 2006-05-25 Showa Denko Kk 半導体素子の製造方法
WO2006062017A1 (ja) * 2004-12-08 2006-06-15 Laser Solutions Co., Ltd. 被分割体における分割起点形成方法、被分割体の分割方法、およびパルスレーザー光による被加工物の加工方法
JP2011131256A (ja) * 2009-12-25 2011-07-07 Mitsuboshi Diamond Industrial Co Ltd 被加工物の加工方法、被加工物の分割方法およびレーザー加工装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6384789A (ja) * 1986-09-26 1988-04-15 Semiconductor Energy Lab Co Ltd 光加工方法
US6090330A (en) * 1997-02-06 2000-07-18 Matsushita Electric Industrial Co., Ltd. Laser processing method
JP3368246B2 (ja) * 2000-02-23 2003-01-20 株式会社白井▲鉄▼工所 液晶パネルの折割装置
JP3779237B2 (ja) * 2002-07-04 2006-05-24 住友電気工業株式会社 基板切断方法及び基板切断装置
JP2004259846A (ja) * 2003-02-25 2004-09-16 Ogura Jewel Ind Co Ltd 基板上形成素子の分離方法
JP5179068B2 (ja) * 2007-02-14 2013-04-10 昭和電工株式会社 化合物半導体素子の製造方法
US8728916B2 (en) * 2009-02-25 2014-05-20 Nichia Corporation Method for manufacturing semiconductor element
KR101434235B1 (ko) * 2009-05-28 2014-08-26 에피스타 코포레이션 발광 소자
JP5385060B2 (ja) * 2009-09-07 2014-01-08 株式会社ディスコ 保護膜被覆方法および保護膜被覆装置
JP4961468B2 (ja) * 2009-10-29 2012-06-27 三星ダイヤモンド工業株式会社 レーザー加工方法、被加工物の分割方法およびレーザー加工装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004165227A (ja) * 2002-11-08 2004-06-10 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子の製造方法
JP2006135309A (ja) * 2004-10-07 2006-05-25 Showa Denko Kk 半導体素子の製造方法
WO2006062017A1 (ja) * 2004-12-08 2006-06-15 Laser Solutions Co., Ltd. 被分割体における分割起点形成方法、被分割体の分割方法、およびパルスレーザー光による被加工物の加工方法
JP2011131256A (ja) * 2009-12-25 2011-07-07 Mitsuboshi Diamond Industrial Co Ltd 被加工物の加工方法、被加工物の分割方法およびレーザー加工装置

Also Published As

Publication number Publication date
CN103128449A (zh) 2013-06-05
CN103128449B (zh) 2015-11-25
TWI478377B (zh) 2015-03-21
KR101437229B1 (ko) 2014-09-02
KR20130062227A (ko) 2013-06-12
TW201330309A (zh) 2013-07-16

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