JP2013100220A5 - - Google Patents

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Publication number
JP2013100220A5
JP2013100220A5 JP2012231353A JP2012231353A JP2013100220A5 JP 2013100220 A5 JP2013100220 A5 JP 2013100220A5 JP 2012231353 A JP2012231353 A JP 2012231353A JP 2012231353 A JP2012231353 A JP 2012231353A JP 2013100220 A5 JP2013100220 A5 JP 2013100220A5
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JP
Japan
Prior art keywords
concentration
crystal
less
gan crystal
arcsec
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JP2012231353A
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English (en)
Japanese (ja)
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JP2013100220A (ja
JP6036155B2 (ja
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Priority to JP2012231353A priority Critical patent/JP6036155B2/ja
Priority claimed from JP2012231353A external-priority patent/JP6036155B2/ja
Publication of JP2013100220A publication Critical patent/JP2013100220A/ja
Publication of JP2013100220A5 publication Critical patent/JP2013100220A5/ja
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JP2012231353A 2011-10-21 2012-10-19 ＧａＮ結晶 Active JP6036155B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012231353A JP6036155B2 (ja) 2011-10-21 2012-10-19 ＧａＮ結晶

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011232166 2011-10-21
JP2011232166 2011-10-21
JP2012231353A JP6036155B2 (ja) 2011-10-21 2012-10-19 ＧａＮ結晶

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016204109A Division JP6217825B2 (ja) 2011-10-21 2016-10-18 ＧａＮ結晶

Publications (3)

Publication Number Publication Date
JP2013100220A JP2013100220A (ja) 2013-05-23
JP2013100220A5 true JP2013100220A5 (OSRAM) 2015-11-19
JP6036155B2 JP6036155B2 (ja) 2016-11-30

Family

ID=48621275

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2012231353A Active JP6036155B2 (ja) 2011-10-21 2012-10-19 ＧａＮ結晶
JP2016204109A Active JP6217825B2 (ja) 2011-10-21 2016-10-18 ＧａＮ結晶

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2016204109A Active JP6217825B2 (ja) 2011-10-21 2016-10-18 ＧａＮ結晶

Country Status (1)

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JP (2) JP6036155B2 (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6832668B2 (ja) * 2016-10-07 2021-02-24 古河機械金属株式会社 自立基板、及び、自立基板の製造方法
WO2018169059A1 (ja) 2017-03-17 2018-09-20 旭化成株式会社 熱硬化性樹脂組成物
JP6455575B2 (ja) * 2017-09-12 2019-01-23 三菱ケミカル株式会社 第１３族金属窒化物基板の製造方法
FR3102776B1 (fr) * 2019-11-05 2025-04-11 Saint Gobain Lumilog Plaquette de nitrure d’élément 13 de variation d’angle de troncature réduite

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009126723A (ja) * 2007-11-20 2009-06-11 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体結晶の成長方法、ｉｉｉ族窒化物半導体結晶基板の製造方法およびｉｉｉ族窒化物半導体結晶基板
JP2011523931A (ja) * 2008-05-28 2011-08-25 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 低濃度アルカリ金属保有の六方晶系ウルツ鉱型エピタキシャル層およびその生成方法
EP2439317A1 (en) * 2009-06-04 2012-04-11 Mitsubishi Chemical Corporation Process and apparatus for production of crystals of compound of metal belonging to group-13 on periodic table
JP5447289B2 (ja) * 2009-08-19 2014-03-19 三菱化学株式会社 窒化物半導体結晶およびその製造方法

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