JP2013095920A - プリント回路基板用絶縁性樹脂組成物及びそれを含むプリント回路基板 - Google Patents
プリント回路基板用絶縁性樹脂組成物及びそれを含むプリント回路基板 Download PDFInfo
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Abstract
【解決手段】本発明は、化学式1で表される液晶オリゴマー40〜70重量%と、エポキシ樹脂10〜30重量%と、シアネート系樹脂10〜30重量%と、硬化触媒0.1〜0.5重量%と、を含むプリント回路基板用絶縁性樹脂組成物及びそれを含むプリント回路基板に関する。本発明の一実施形態によると、プリント回路基板が低重量化、薄層化及び小型化しても、プリント回路基板の電気的、熱的、機械的安定性が確保される。また、既存の基板工程でも安定した駆動特性を示し、低い誘電率を示すとともに接着強度、耐薬品性及び反り特性に優れる。
【選択図】図1
Description
前記基板組成物に含まれるポリマー樹脂は、主に液晶オリゴマーとエポキシ系樹脂である。前記液晶オリゴマーは、両末端にヒドロキシ基のような官能性基を含み、エポキシ樹脂も多官能性基を有する。従って、前記液晶オリゴマーとエポキシ系樹脂を熱硬化させると、多官能性エポキシ樹脂を反応させて生成されるヒドロキシ基とエポキシ系樹脂の分子鎖の柔軟性(flexibility)のために回路基板の材料特性において重要な熱膨張率(Coefficient of thermal expansion、CTE)を低める側面では有利でない。
前記X1〜X4は、互いに同一または異なって、それぞれC(=O)O、O、C(=O)NR、NR´、またはCOであり(ここで、R及びR´は、互いに同一または異なって、水素、置換または非置換のC1〜C20のアルキル基、または置換または非置換のC6〜C30のアリール基である)、
前記Z1〜Z3は、それぞれ独立して、ヒドロキシ基;置換または非置換のC3〜C30の脂環族基;置換または非置換のC3〜C30のヘテロ原子含有脂環族基であり、
前記n1〜n3は、それぞれ独立して、0〜3の整数であり、n1+n2+n3は1以上であることができ、
前記化学式1中、A1は下記化学式4−1〜4−7で表される官能基のうち一つであり、
前記化学式4−7中、L1は2価の有機官能基であり、
前記化学式2中、A2は下記化学式5−1〜5−6で表される官能基のうち一つまたは下記化学式6の官能基を有するC2〜C20のアルキレン基であり、
前記化学式5−1〜5−6中、それぞれの芳香族環の少なくとも一つの水素は、ハロゲン、置換または非置換のC1〜C20のアルキル基、置換または非置換のC1〜C20のアルコキシ基、置換または非置換のC3〜C20のシクロアルキル基、置換または非置換のC6〜C30のアリール基、置換または非置換のC7〜C30のアリールアルキル基、置換または非置換のC6〜C30のアリールオキシ基またはZ1(Z1は、化学式1における定義と同じである)で置換されていてもよく、
前記X1〜X4は、互いに同一または異なって、それぞれC(=O)O、O、C(=O)NR、NR´、またはCOであり(ここで、R及びR´は、互いに同一または異なって、水素、置換または非置換のC1〜C20のアルキル基または置換または非置換のC6〜C30のアリール基である)、
前記Z1〜Z3は、それぞれ独立して、ヒドロキシ基;置換または非置換のC3〜C30の脂環族基;置換または非置換のC3〜C30のヘテロ原子含有脂環族基であり、
前記n1〜n3は、それぞれ独立して0〜3の整数であり、n1+n2+n3は1以上であることができ、
前記化学式1中、A1は下記化学式4−1〜4−7で表される官能基のうち一つであり、
前記化学式4−7中、L1は2価の有機官能基であり、
前記化学式2中A2は、下記化学式5−1〜5−6で表される官能基のうち一つまたは下記化学式6の官能基を有するC2〜C20のアルキレン基である。
前記化学式5−1〜5−6中、それぞれの芳香族環の少なくとも一つの水素は、ハロゲン、置換または非置換のC1〜C20のアルキル基、置換または非置換のC1〜C20のアルコキシ基、置換または非置換のC3〜C20のシクロアルキル基、置換または非置換のC6〜C30のアリール基、置換または非置換のC7〜C30のアリールアルキル基、置換または非置換のC6〜C30のアリールオキシ基またはZ1(Z1は、化学式1における定義と同じである)で置換されていてもよく、
下記化学式12−1で表される液晶オリゴマー(数平均分子量は3900g/mol)60wt%、N,N,N´,N´−テトラグリシジル−4,4´−メチレンビスベンゼンアミン(N,N,N´,N´−Tetraglycidyl−4,4´−methylenebisbenzenamine)20wt%、フェノールノボラックシアネートエステル(phenol novolac cyanate ester)樹脂20wt%、及び硬化触媒ジシアンジアミド(Dicyandiamide)0.2wt%を、固形分が55wt%になるようにN,N´−ジメチルアセトアミド(DMAc)に添加して、絶縁性樹脂組成物の混合溶液(vanish)を製造した。
前記化学式12−1で表される液晶オリゴマー(数平均分子量は4100g/mol)を用いて、エポキシ樹脂としてo−クレゾール−ホルムアルデヒドノボラック(Polyglycidyl ether of o−cresol−formaldehyde novolac、YDCN−500P−1P(Kukdo化学社製))を用いることを除き、前記実施例1と同様の方法により固形分含量53wt%の絶縁性樹脂組成物の混合溶液(vanish)を製造した。
前記実施例1で用いられた化学式12−1で表される液晶オリゴマー60wt%、YDF−170(Kukdo化学社製、フェノール(phenol)のホルムアルデヒド(formaldehyde)オリゴマー反応生成物)20wt%、フェノールノボラックシアネートエステル(phenol novolac cyanate ester)樹脂20wt%及び硬化触媒ジシアンジイミド(Dicyandiamide)0.2wt%を、固形分が58wt%になるようにN,N´−ジメチルアセトアミド(DMAc)に添加して絶縁性樹脂組成物の混合溶液(vanish)を製造した。
シアネート系樹脂であるフェノールノボラックシアネートエステル(phenol novolac cyanate ester)樹脂を含まず、N,N,N´,N´−テトラグリシジル−4,4´−メチレンビスベンゼンアミン(N,N,N´,N´−Tetraglycidyl−4,4´−methylenebisbenzenamine)40wt%を添加することを除き、前記実施例1と同様の方法により固形分含量55wt%の絶縁性樹脂組成物の混合溶液(vanish)を製造した。
前記実施例1〜3及び比較例1により製造されたプリプレグ試験片のガラス転移温度(Tg)は動的機械分析器(DMA:Dynamic Mechanical Analyzer、TA Instruments社製、DMA Q800)を利用して測定し、熱分解温度 (Td)は熱中量分析器(TGA:Thermogravimetric Analyzer、TA Instruments社製、TGA DTA Q600)を利用して測定し、熱膨張係数(CTE、Coefficient of Thermal Expansion)は熱分析器(TMA:Thermomechanical Analyzer、TA Instruments社製、TMA Q400)を利用して窒素雰囲気で温度を10℃/minで昇温して測定し、その結果を下記表1に示した。
銅箔積層板の表面から幅1cmの銅箔を剥し、引張強度測定器(Universal Testing Machine、UTM)を利用して銅箔の絶縁層との剥離強度を測定し、その結果を下記表1に示した(90° Peel Test、Crosshead Speed:50mm/min)。
20 銅箔
21、22 回路パターン
Claims (14)
- 下記化学式1の構造単位及び下記化学式2の構造単位を含み、少なくとも一つの末端に下記化学式Eの官能基を有する液晶オリゴマー40〜70重量%と、
エポキシ樹脂10〜30重量%と、
シアネート系樹脂10〜30重量%と、
硬化触媒0.1〜0.5重量%と、
を含むプリント回路基板用絶縁性樹脂組成物。
前記X1〜X4は、互いに同一または異なって、それぞれC(=O)O、O、C(=O)NR、NR´、またはCOであり(ここで、R及びR´は、互いに同一または異なって、水素、置換または非置換のC1〜C20のアルキル基、または置換または非置換のC6〜C30のアリール基である)、
前記Z1〜Z3は、それぞれ独立して、ヒドロキシ基;置換または非置換のC3〜C30の脂環族基;置換または非置換のC3〜C30のヘテロ原子含有脂環族基であり、
前記n1〜n3は、それぞれ独立して、0〜3の整数であり、n1+n2+n3は1以上であることができ、
前記化学式1中、A1は下記化学式4−1〜4−7で表される官能基のうち一つであり、
前記化学式4−7中、L1は2価の有機官能基であり、
前記化学式2中、A2は下記化学式5−1〜5−6で表される官能基のうち一つまたは下記化学式6の官能基を有するC2〜C20のアルキレン基であり、
前記化学式5−1〜5−6中、それぞれの芳香族環の少なくとも一つの水素は、ハロゲン、置換または非置換のC1〜C20のアルキル基、置換または非置換のC1〜C20のアルコキシ基、置換または非置換のC3〜C20のシクロアルキル基、置換または非置換のC6〜C30のアリール基、置換または非置換のC7〜C30のアリールアルキル基、置換または非置換のC6〜C30のアリールオキシ基またはZ1(Z1は、化学式1における定義と同じである)で置換されていてもよく、
- 前記液晶オリゴマーの数平均分子量は500〜10,000g/molである請求項1に記載のプリント回路基板用絶縁性樹脂組成物。
- 前記化学式1の構造単位は液晶オリゴマーの総量中5〜60モール%で含まれ、前記化学式2の構造単位は液晶オリゴマーの総量中40〜95モール%で含まれる請求項1に記載のプリント回路基板用絶縁性樹脂組成物。
- 前記化学式4−7のL1は、エーテル基、スルフィド基、ケトン基、スルホキシド、スルホン基、アゾ基、シアニド基、置換または非置換のC1〜C20のアルキレン基、置換または非置換のC1〜C20のアルケニレン基、置換または非置換のC6〜C30のアリーレン基である請求項1に記載のプリント回路基板用絶縁性樹脂組成物。
- 前記化学式5−6のL2は、エーテル基、スルフィド基、ケトン基、アミド基、スルホキシド、スルホン基、アゾ基、シアニド基、置換または非置換のC1〜C20のアルキレン基、置換または非置換のC2〜C20のアルケニレン基、置換または非置換のC6〜C30のアリーレン基、少なくとも一つの前記化学式6の官能基で置換されているかまたは置換されていない2価の有機官能基または前記化学式7−1〜7−3の2価の有機官能基である請求項1に記載のプリント回路基板用絶縁性樹脂組成物。
- 前記化学式6は下記化学式11で表されるものである請求項1に記載のプリント回路基板用絶縁性樹脂組成物。
- 前記液晶オリゴマーの数平均分子量は、2,000〜5,000g/molである請求項7に記載のプリント回路基板用絶縁性樹脂組成物。
- 前記エポキシ樹脂は、フェノール系グリシジルエーテル型エポキシ樹脂、ジシクロペンタジエン型エポキシ樹脂、ナフタレン型エポキシ樹脂、ジヒドロキシベンゾピラン型エポキシ樹脂、グリシジルアミン型エポキシ樹脂、トリフェノールメタン型エポキシ樹脂、及びテトラフェニルエタン型エポキシ樹脂からなる群から選択される一つ以上である請求項1に記載のプリント回路基板用絶縁性樹脂組成物。
- 請求項1に記載の絶縁性樹脂組成物を含む絶縁層と、
前記絶縁層の上面または下面のうち少なくとも一面に形成される銅箔と、
を含む銅箔積層板。 - 前記絶縁層は補強材をさらに含む請求項11に記載の銅箔積層板。
- 請求項1に記載の絶縁性樹脂組成物を含む絶縁層と、
前記絶縁層に形成される回路パターンと、
を含むプリント回路基板。 - 前記絶縁層は補強材をさらに含む請求項13に記載のプリント回路基板。
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