JP2013084809A - Wiring body with wiring sheet, semiconductor device, and method of manufacturing the semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a wiring body with a wiring sheet, a semiconductor device, and a method of manufacturing the semiconductor device capable of simplifying a manufacturing process.SOLUTION: A semiconductor device 1 has: a switching element 10 on whose first principal surface 11 a source electrode 14 and a gate electrode 15 are formed and on whose second principal surface 12 a drain electrode 13 is formed; and a conductive layer lamination substrate 80 connected with the drain electrode 13. To the semiconductor device 1, a wiring body 30 with a wiring sheet is applied as an upper side wiring structure. The wiring body 30 with the wiring sheet has a first wiring body 40 connected with the source electrode 14, and a wiring sheet 60 provided with a gate terminal connected with the gate electrode 15. The wiring sheet 60 is attached to a surface to which the source electrode 14 is connected in the first wiring body 40.

Description

  The present invention relates to a wiring body with a wiring sheet in which switching elements are arranged, a semiconductor device, and a method for manufacturing the semiconductor device.

  A semiconductor device having a one-side cooling structure is known as a kind of semiconductor device for power control. This type of semiconductor device includes a switching element, a conductive layer laminated substrate on which the switching element is disposed, and a wiring structure. The wiring structure includes a wiring body connected to the first electrode on the first main surface of the switching element and a wiring body connected to the control electrode.

As a switching element for power control, a silicon (Si) IGBT (Insulated Gate Bipolar Transistor) is mainly used.
In recent years, field-effect transistors, SiC-based MOSFETs (Metal--), which are formed of a wide bandgap semiconductor material capable of higher breakdown voltage and lower loss than Si, such as silicon carbide (SiC) and gallium nitride (GaN), etc. Oxide-Semiconductor Field-Effect Transistor) and GaN-based MESFETs are also used.

  In the technique described in Patent Document 1, a lead frame is used as a wiring body connected to the first electrode (emitter electrode) of the switching element. The lead frame and the first electrode are connected by a wire. On the other hand, a flexible substrate is used as a wiring body connected to the control electrode (gate electrode) of the switching element.

JP 2006-332579 A

The structure of the wiring structure has been studied in response to a demand for increasing the efficiency of the semiconductor device manufacturing process.
In the technique of Patent Document 1, a plurality of wires are used for connection between the switching element and the lead frame. In the case of such a structure, when the number of switching elements mounted in the semiconductor device is large, the number of wires increases, and the connection process time becomes long.

  Further, since the connection method between the switching element and the lead frame and the connection between the switching element and the flexible substrate are different, each connection is performed in a separate process. When the connection process is divided into a plurality of parts, the manufacturing management becomes complicated, and much labor is required. Under such circumstances, there is a demand for a structure of a semiconductor device that can simplify the manufacturing process.

  The present invention has been made to solve such problems, and an object of the present invention is to provide a wiring body with a wiring sheet, a semiconductor device, and a method of manufacturing the semiconductor device that can simplify the manufacturing process. There is.

  (1) The invention described in claim 1 is a switching element in which at least a first electrode and a control electrode are formed on a first main surface and a second electrode is formed on a second main surface, and connected to the second electrode For a semiconductor device comprising a conductive layer laminated substrate and a wiring structure connected to the first electrode and the control electrode, the wiring body with a wiring sheet used as the wiring structure of the semiconductor device, A wiring body connected to the first electrode; and a wiring sheet provided with a control terminal connected to the control electrode, wherein the wiring sheet is attached to a surface of the wiring body to which the first electrode is connected. It is the gist.

  According to this invention, instead of the wire connection of the conventional structure, the wiring body is connected to the first electrode. Thereby, since it is not necessary to perform many wire connection operations unlike the conventional structure, the connection operations can be simplified. Further, since the wiring sheet is fixed to the wiring body, the wiring body and the wiring sheet can be collectively connected to the switching element. For this reason, it is not necessary to attach a wiring body and a wiring sheet separately. That is, the manufacturing process of the semiconductor device can be simplified.

  (2) The invention according to claim 2 is the wiring body with a wiring sheet according to claim 1, wherein the main surface of the wiring body is connected to the first electrode and the control terminal of the wiring sheet. The wiring sheet is fixed to the wiring body so that the arrangement relationship corresponds to the arrangement relationship between the first electrode and the control electrode on the first main surface of the switching element. .

  In this invention, the arrangement relationship between the connection part of the wiring body and the control terminal is matched with the arrangement relationship between the first electrode and the control electrode of the switching element. For this reason, the 1st electrode of a switching element and a connection part and the control electrode and control terminal of a switching element can be connected accurately.

(3) The gist of the invention described in claim 3 is that, in the wiring body with a wiring sheet according to claim 2, the connection portion is surrounded by an extended portion of the wiring sheet.
In this invention, the connection part is enclosed by the extension part of the wiring sheet. For this reason, it can suppress that the connection material used when connecting a wiring body and the 1st electrode of a switching element diffuses in places other than a connection part. When the connection material diffuses, the switching element may move and the switching element may not be fixed at a predetermined position. However, according to this configuration, the movement of the switching element can be suppressed.

  (4) The invention according to claim 4 is the wiring body with a wiring sheet according to any one of claims 1 to 3, wherein the wiring body is a first wiring body and the conductive layer of the conductive layer laminated substrate. The second wiring body is further provided, and the second wiring body is fixed to the first wiring body via an insulating spacer.

  According to this invention, the 1st wiring body, the wiring sheet, and the 2nd wiring body are united. For this reason, since it is not necessary to connect these members individually, the manufacturing process of the semiconductor device can be further simplified.

  (5) The invention according to claim 5 is the wiring body with a wiring sheet according to any one of claims 1 to 4, wherein the wiring body is provided with a contact portion that contacts the conductive layer laminated substrate. It is a summary.

  A cooling device can be mounted on the back surface side of the conductive layer laminated substrate, that is, the surface opposite to the surface on which the switching elements are arranged. That is, the switching element is cooled via the conductive layer laminated substrate. In the present invention, the wiring body is brought into contact with the conductive layer laminated substrate. That is, the wiring body is cooled through the conductive layer laminated substrate. Thereby, it becomes possible to efficiently radiate heat from the switching element from both sides. Thereby, overheating of a switching element can be suppressed.

  (6) The invention according to claim 6 is used as the wiring structure of a semiconductor device including a switching element and another semiconductor element in the wiring body with a wiring sheet according to any one of claims 1 to 5. The connection part connected to the first electrode in the wiring body is a first connection part, and the wiring body is provided with a second connection part connected to the electrode of the other semiconductor element. It is a summary. According to this invention, the wiring body and the wiring sheet are integrated. For this reason, the manufacturing process of the semiconductor device including the switching element and other semiconductor elements can be simplified.

(7) The invention according to claim 7 is a semiconductor device including the wiring body with a wiring sheet according to any one of claims 1 to 6.
According to this invention, since the wiring body with a wiring sheet having the above configuration is provided, the manufacturing process of the semiconductor device can be simplified.

  (8) The invention according to claim 8 is a switching element in which at least a first electrode and a control electrode are formed on the first main surface and a second electrode is formed on the second main surface, and connected to the second electrode In a semiconductor device comprising a conductive layer laminated substrate, a wiring body connected to the first electrode, and a wiring sheet connected to the control electrode, the wiring sheet is attached to the wiring body The gist is that they are integrated.

  According to this invention, since the wiring sheet is fixed and integrated with the wiring body, both members can be connected to the switching element in a lump. For this reason, the manufacturing process of the semiconductor device can be simplified.

  (9) The invention according to claim 9 is a switching element in which at least a first electrode and a control electrode are formed on a first main surface and a second electrode is formed on a second main surface, a flywheel diode, A conductive layer laminated substrate connected to the second electrode of the switching element and one electrode of the flywheel diode; a wiring body connected to the first electrode of the switching element and the other electrode of the flywheel diode; In a semiconductor device including a wiring sheet connected to a control electrode, the gist is that the wiring sheet is attached to and integrated with the wiring body.

  According to the present invention, in the semiconductor device including the switching element and the flywheel diode, since the wiring body and the wiring sheet are integrated, it is not necessary to individually connect these members. The manufacturing process can be simplified.

  (10) The invention according to claim 10 includes an upper switching element in which at least a first upper electrode and an upper control electrode are formed on a first main surface and a second upper electrode is formed on a second main surface; A lower switching element having at least a first lower electrode and a lower control electrode formed on the main surface and a second lower electrode formed on the second main surface; an upper flywheel diode having one electrode and another electrode; A lower flywheel diode in which an electrode and another electrode are formed, a first conductive layer and a second conductive layer, and a second upper electrode and an upper flywheel diode of the upper switching element via the first conductive layer The second lower electrode of the lower switching element and the other electrode of the lower flywheel diode connected to the other electrode and through the second conductive layer And a first wiring body connected to the first upper electrode of the upper switching element and one electrode of the upper flywheel diode and connected to the second conductive layer, and A second wiring body fixed to the first wiring body through an insulating spacer and connected to the first conductive layer, the first lower stage electrode of the lower stage switching element, and one electrode of the lower stage flywheel diode A third wiring body connected to the first wiring body, a first wiring sheet fixed to the first wiring body and connected to the upper control electrode of the upper switching element, and fixed to the third wiring body, And a second wiring sheet connected to the lower control electrode of the lower switching element.

  According to the present invention, in the semiconductor device in which the upper switching element and the lower switching element are connected in series, and the flywheel diode is connected in parallel to each switching element in the reverse direction, the first wiring body and the second wiring The body, the third wiring body, and the wiring sheet are integrated. There is no need to connect these members individually. For this reason, the manufacturing process of the semiconductor device can be simplified.

  (11) The invention according to claim 11 is a switching element in which at least a first electrode and a control electrode are formed on the first main surface and a second electrode is formed on the second main surface, and connected to the second electrode A method of manufacturing a semiconductor device, comprising: a conductive layer laminated substrate, a wiring body connected to the first electrode, and a wiring sheet connected to the control electrode, wherein the wiring body and the wiring The gist includes a step of forming a wiring body with a wiring sheet by integrating the sheet and a step of connecting the wiring body with the wiring sheet and the switching element.

  According to this invention, first, the wiring body with the wiring sheet is formed by integrating the wiring body and the wiring sheet. Next, the wiring body with the wiring sheet and the switching element are connected. That is, by integrating the wiring body and the wiring sheet, these members can be attached to the switching element at a time, so that the manufacturing process can be simplified.

  (12) According to a twelfth aspect of the present invention, in the method for manufacturing a semiconductor device according to the eleventh aspect, a first solder connection step of connecting the switching element to the wiring body with the wiring sheet by solder; The gist of the present invention is that the assembly of the solder connection step includes a second solder connection step of connecting the conductive layer laminated substrate with solder.

  According to this invention, before fixing the switching element to the conductive layer laminated substrate, the switching element is connected to the wiring body with the wiring sheet by soldering. That is, solder connection is performed in a state where the switching element is movable. Thereby, at the time of solder connection, the switching element can be moved to an appropriate position by the surface tension of the solder. That is, since the switching element is positioned by self-alignment, it is possible to suppress a short circuit from occurring between the first electrode and the control electrode.

  (13) In the semiconductor device manufacturing method according to the twelfth aspect of the invention, the second solder connection step uses a solder having a lower melting point than the solder in the first solder connection step. The gist.

  The present invention uses a solder having a lower melting point than the solder used in the first solder connection step in the second solder connection step. For this reason, in the second solder connection step, it is possible to suppress positional deviation between components that are solder-connected before this step.

  ADVANTAGE OF THE INVENTION According to this invention, the wiring body with a wiring sheet which can simplify a manufacturing process, a semiconductor device, and the manufacturing method of the semiconductor device are provided.

The top view which shows a planar structure about the semiconductor device of one Embodiment. Sectional drawing along the AA line of FIG. The top view of a wiring body with a wiring sheet. Sectional drawing which shows the assembly method of a semiconductor device. The enlarged view which shows mounting of a switching element. The top view which shows a planar structure about the semiconductor device of other embodiment. Sectional drawing along the BB line of FIG. The block diagram which shows a circuit structure about the semiconductor device of other embodiment. FIG. 9 is a plan view showing a planar structure of the semiconductor device of FIG. 8. Sectional drawing along CC line of FIG. The top view which shows a planar structure about the semiconductor device of other embodiment. Sectional drawing along the DD line | wire of FIG. Sectional drawing along the EE line | wire of FIG.

[First Embodiment]
A first embodiment of the semiconductor device of the present invention will be described with reference to FIGS.
The semiconductor device 1 described below is used in a switching circuit such as an inverter, for example.

  The semiconductor device 1 includes a switching element 10, a flywheel diode 20, a wiring body 30 with a wiring sheet (wiring structure), a conductive layer laminated substrate 80, a case 90, and a sealing resin 100.

The circuit configuration of the semiconductor device 1 is as follows.
The switching element 10 and the flywheel diode 20 are connected in parallel.
That is, the source electrode 14 of the switching element 10 and the anode electrode of the flywheel diode 20 are connected to each other. The drain electrode 13 of the switching element 10 and the cathode electrode of the flywheel diode 20 are connected to each other.

  A signal wiring (wiring 61) is connected to the gate electrode 15 of the switching element 10. The flywheel diode 20 is an element for escaping electric power generated in the reverse direction of the switching element 10. This suppresses overpower from being applied to the switching element 10.

Hereinafter, each component of the semiconductor device 1 will be described.
The switching element 10 is formed of an n-type MOSFET.
On the first main surface 11 of the switching element 10, a source electrode 14 (first electrode), a gate electrode 15 (control electrode), a first monitor electrode 16, a second monitor electrode 17, and a third monitor electrode 18. And the 4th monitor electrode 19 is formed. A drain electrode 13 (second electrode) is formed on the second main surface 12 of the switching element 10.

  The first monitor electrode 16 is connected to the anode of a temperature characteristic monitoring diode formed in the switching element 10 for temperature monitoring. The second monitor electrode 17 is connected to the cathode of the temperature characteristic monitoring diode. Note that the temperature of the switching element 10 is estimated based on the potential difference between the first monitor electrode 16 and the second monitor electrode 17.

  The third monitor electrode 18 is connected to the drain layer in the switching element 10. That is, a part of the drain current is output. For example, 1/10000 of the drain current is shunted.

  The fourth monitor electrode 19 is connected to the source layer in the switching element 10. A signal input to the gate electrode 15 of the switching element 10 is formed with reference to the potential of the source layer, that is, the potential of the fourth monitor electrode 19.

  The source electrode 14 is larger than the gate electrode 15 and the first to fourth monitor electrodes 16 to 19. The gate electrode 15 and the first to fourth monitor electrodes 16 to 19 are arranged in a line on the end side of the first main surface 11. These electrodes 15-19 are formed in substantially the same size.

The flywheel diode 20 is made of silicon (Si).
An anode electrode (one electrode) is formed on the first main surface 21 of the flywheel diode 20. A cathode electrode (other electrode) is formed on the second main surface 22 of the flywheel diode 20.

The case 90 will be described.
Case 90 accommodates a part of switching element 10, flywheel diode 20, and wiring body 30 with a wiring sheet. The inside of the case 90 is filled with a sealing resin 100 that seals the switching element 10 and the flywheel diode 20. As the sealing resin 100, silicone gel, epoxy resin, or the like is used.

  As shown in FIG. 2, the case 90 includes a heat sink plate 93 that forms the bottom wall of the semiconductor device 1 and a frame body 94 that forms the side wall. The frame body 94 surrounds the heat sink plate 93. The frame body 94 is formed of a heat resistant resin. A first external terminal 91 and a second external terminal 92 are attached to the frame body 94. A conductive layer laminated substrate 80 is attached to the bottom surface of the case 90. That is, the conductive layer laminated substrate 80 is disposed on the heat sink plate 93, and both are connected by soldering.

The conductive layer laminated substrate 80 includes an insulating substrate 81, a conductive layer 82 formed on one surface of the insulating substrate 81, and a metal layer 83 formed on the other surface of the insulating substrate 81.
The insulating substrate 81 is made of ceramics such as aluminum nitride.

The conductive layer 82 is made of a highly conductive metal such as copper or aluminum.
The metal layer 83 is provided for suppressing warpage of the insulating substrate 81. The metal layer 83 is formed of a material having an expansion coefficient equivalent to that of the conductive layer 82. For example, the metal layer 83 is formed of copper, aluminum, or the like.

As this type of conductive layer laminated substrate 80, DBA (DBA: Direct Brazed Aluminum), DBC (Direct Bonding Copper), AMC (Active Metal Brazed Copper), or the like is used. A substrate obtained by bonding a copper plate to a silicon nitride substrate (Si ₃ N ₄ ) by an active metal method can also be used.

The wiring body 30 with a wiring sheet is demonstrated with reference to FIG. 2 and FIG.
The wiring body 30 with a wiring sheet includes a first wiring body 40 (wiring body), a second wiring body 50, and a wiring sheet 60.

The first wiring body 40 will be described.
The first wiring body 40 is connected to the source electrode 14 of the switching element 10 and the anode electrode of the flywheel diode 20. One end of the first wiring body 40 is connected to the first external terminal 91.

  The first wiring body 40 is formed of a good conductor having a thickness of several hundred μm to several mm. Since some switching elements 10 can control current of several tens of A to 100 A, the first wiring body 40 is set to the above thickness.

The surface of the first wiring body 40 is subjected to electroless Ni—P plating treatment to prevent rust.
As a material of the first wiring body 40, copper is used from the viewpoints of conductivity and thermal conductivity. For example, it is made of high-purity copper such as tough pitch copper or oxygen-free copper. In addition, aluminum may be used for weight reduction.

The second wiring body 50 will be described.
The second wiring body 50 is connected to the second external terminal 92. The second wiring body 50 is formed of the same material as the first wiring body 40 and is subjected to the same surface treatment.

  The second wiring body 50 corresponds to a first connection portion 51 provided at one end, a second connection portion 52 provided at the other end, and a portion between the first connection portion 51 and the second connection portion 52. And an intermediate portion 53. The first connection unit 51 is connected to the second external terminal 92. The second connection part 52 is connected to the conductive layer 82.

  The first connection part 51 is located higher than the second connection part 52. That is, the first connection part 51 and the second connection part 52 are arranged at different heights in the direction perpendicular to the bottom surface of the second connection part 52. In addition, the comparison of the height of the 1st connection part 51 and the 2nd connection part 52 uses the bottom face (part which touches a conductive layer) of the 2nd connection part 52 as a reference plane.

  The second wiring body 50 is attached to the first wiring body 40 via an insulating spacer 54. The insulating spacer 54 is disposed between the intermediate portion 53 of the second wiring body 50 and the first wiring body 40 and insulates the first wiring body 40 and the second wiring body 50.

The insulating spacer 54 is made of a polyimide sheet whose both surfaces are thermoplastic layers, a resin sheet such as epoxy resin or polyphenylene sulfide resin, a ceramic plate such as SiN, alumina (Al ₂ O ₃ ), and AlN plate, DBA, DBC, AMC, etc. It is formed by a substrate. In the case of a polyimide sheet, the first wiring body 40 and the second wiring body 50 are fixed by thermocompression bonding. In the case of DBA, DBC, AMC, etc., the first wiring body 40 and the second wiring body 50 are fixed by solder connection.

The wiring sheet 60 will be described.
The wiring sheet 60 is formed of a flexible printed board. Specifically, it has the following configuration.

  The wiring sheet 60 includes five wirings 61, a reinforcing plate 62, a first polyimide layer 63A that covers one surface of the wiring 61 and the reinforcing plate 62, and a second polyimide layer 63B that covers the other surface of the wiring 61 and the reinforcing plate 62. And.

The first polyimide layer 63 </ b> A is an insulating layer in contact with the first wiring body 40.
The first polyimide layer 63A has a three-layer structure. That is, the intermediate layer of the first polyimide layer 63A is a non-thermoplastic polyimide layer, and a thermoplastic polyimide layer is formed on both surfaces of the non-thermoplastic polyimide layer. That is, the surface in contact with the wiring 61, the surface in contact with the reinforcing plate 62, and the surface in contact with the first wiring body 40 are formed of a thermoplastic polyimide resin. Thereby, the high temperature adhesion between the first polyimide layer 63A and the wiring 61, the high temperature adhesion between the first polyimide layer 63A and the reinforcing plate 62, and the high temperature adhesion between the first polyimide layer 63A and the first wiring body 40 are obtained. improves.

The second polyimide layer 63B is formed by applying a non-thermoplastic resin to the first polyimide layer 63A on which the wiring 61 and the reinforcing plate 62 are formed.
The wiring 61 and the reinforcing plate 62 are made of a copper material.

  The wiring sheet 60 is divided into a fixing portion 60A that is fixed to the main surface 40A side of the first wiring body 40 and a lead portion 60B that includes the wiring 61. As shown in FIG. 3, a part of the lead portion 60 </ b> B contacts the first wiring body 40 and is fixed to the first wiring body 40 at this contact portion.

  60 A of fixing parts surround the part (henceforth the 1st soldering connection part 41) which solder-connects with the switching element 10, and the part (henceforth the 2nd soldering connection part 42) which solder-connects with the flywheel diode 20. FIG. That is, the first through hole 64 is formed so as to surround the first solder connection portion 41. A second through hole 65 is formed so as to surround the second solder connection portion 42.

A first solder layer 101 </ b> A made of the first solder 101 is formed in a portion (first solder connection portion 41) surrounded by the first through holes 64.
The first through hole 64 is formed at a location corresponding to the source electrode 14 of the switching element 10. The size of the first through hole 64 is substantially the same as the size of the source electrode 14.

A second solder layer 101B made of the first solder 101 is formed in a portion (second solder connection portion 42) surrounded by the second through hole 65.
The second through hole 65 is formed at a location corresponding to the flywheel diode 20. The size of the second through hole 65 is substantially the same as the size of the flywheel diode 20.

The wiring 61 extends from the vicinity of the first through hole 64.
In the vicinity of the first through hole 64, an opening 66 from which a part of the second polyimide layer 63B is removed is formed. Five terminals 67 to 71 are formed in the opening 66. Five terminals 67 to 71 are provided at the tip of each wiring 61.

  The five terminals 67 to 71 are composed of a gate terminal 67 (control terminal) and four monitor terminals 68 to 71. The gate terminal 67 is connected to the gate electrode 15. The first monitor terminal 68 is connected to the first monitor electrode 16. The second monitor terminal 69 is connected to the second monitor electrode 17. The third monitor terminal 70 is connected to the third monitor electrode 18. The fourth monitor terminal 71 is connected to the fourth monitor electrode 19.

The arrangement relationship between the five terminals 67 to 71 and the first through holes 64 is as follows.
The first through hole 64 is provided at a position facing the source electrode 14 of the switching element 10. Each of the five terminals 67 to 71 is provided corresponding to the electrodes 15 to 19. That is, the arrangement relationship between the first through hole 64 (that is, the first solder connection portion 41) and the five terminals 67 to 71 and the arrangement relationship between the source electrode 14 and the five electrodes 15 to 19 are the same.

  A solder layer 101C is formed on these five terminals 67-71. The solder layer 101C is formed of the first solder 101. The heights of the surfaces of the five terminals 67 to 71 (the surface of the solder layer) are substantially the same as the height of the first solder layer 101 </ b> A of the first solder connection portion 41. That is, the switching element 10 is configured not to tilt when the switching element 10 is disposed on the first solder layer 101A.

The connection relationship of each component of the semiconductor device 1 will be described.
As shown in FIG. 2, the switching element 10 and the flywheel diode 20 are disposed on the conductive layer 82 of the conductive layer laminated substrate 80 and are solder-connected by the second solder 102. That is, the drain electrode 13 of the switching element 10 and the second main surface 22 of the flywheel diode 20 are connected to the conductive layer 82. The conductive layer 82 is connected to the second external terminal 92 through the second wiring body 50.

  On the other hand, the first main surface 11 of the switching element 10 and the first main surface 21 of the flywheel diode 20 are connected to the wiring body 30 with a wiring sheet. Specifically, the source electrode 14 of the switching element 10, the first main surface 21 of the flywheel diode 20, and the first external terminal 91 are connected to each other via the first wiring body 40. Moreover, each terminal 67-71 of the wiring sheet 60 and each electrode 15-19 of the switching element 10 are mutually connected. These connections are connected by the first solder 101.

The structural features of the wiring body 30 with the wiring sheet will be described.
The wiring body 30 with a wiring sheet constitutes an upper wiring structure (wiring structure) of the semiconductor device 1 to which the switching element 10 and the flywheel diode 20 are connected in parallel. The wiring body 30 with a wiring sheet has two configurations, that is, a first component and a second component. The first component connects the source electrode 14 of the switching element 10, the first main surface 21 of the flywheel diode 20, and the first external terminal 91 to each other. The second component connects the electrodes 15 to 19 of the switching element 10 and the terminals 67 to 71 of the wiring sheet 60 to each other.

  In the conventional structure, the first component is realized by wire connection. Since a large current flows through the source electrode 14 of the switching element 10, the connection between the source electrode 14 and the first main surface 21 of the flywheel diode 20 and the first main surface 21 of the flywheel diode 20 and the first external terminal 91 are connected. A plurality of wires are used in each of the connections. On the other hand, the second component is realized by a flexible substrate.

  On the other hand, in this embodiment, the wiring body 30 with a wiring sheet has the function of a 1st structure part and a 2nd structure part. That is, the first component is realized by the first wiring body 40, and the second component is realized by the wiring sheet 60. The wiring sheet 60 is attached to and integrated with a predetermined position of the first wiring body 40. For this reason, in the manufacturing process of the semiconductor device 1, the first wiring body 40 and the wiring sheet 60 can be attached to the switching element 10 in a lump.

[Method for Manufacturing Semiconductor Device]
A method for manufacturing the semiconductor device 1 will be described with reference to FIGS.
There are three manufacturing methods.

  The first manufacturing method is a method in which the switching element 10 and the flywheel diode 20 are connected to the wiring body 30 with the wiring sheet to form an assembly, and then the assembly and the conductive layer laminated substrate 80 are soldered. .

  The second manufacturing method is a method in which the switching element 10 and the flywheel diode 20 are connected to the conductive layer laminated substrate 80 to form an assembly, and then the assembly is connected to the wiring body 30 with the wiring sheet by soldering. .

  In the third manufacturing method, the switching element 10 and the flywheel diode 20 are arranged on the conductive layer laminated substrate 80, and further, the wiring body 30 with the wiring sheet is arranged on these elements to assemble the laminated body. Is a method of soldering together.

Hereinafter, each assembly method will be described.
[First manufacturing method]
In the first step, the wiring sheet 60 is attached to the first wiring body 40. Specifically, the first wiring body 40 and the wiring sheet 60 are stacked and aligned with each other. And it presses on conditions of 300 degreeC and 3 Mpa using a vacuum hot press apparatus.

  In the second step, the second wiring body 50 is attached to the first wiring body 40 via the insulating spacer 54. The polyimide sheet having the three-layer structure is used as the insulating spacer 54. In this case, both are connected by thermocompression bonding.

  In the third step, the conductive layer laminated substrate 80 is disposed on the heat sink plate 93 of the case 90, and both are connected by solder (hereinafter referred to as third solder). Instead of this solder connection, both may be connected by a brazing material containing a metal filler.

  In the fourth step, the switching element 10 and the flywheel diode 20 are arranged in the assembly (wiring body 30 with a wiring sheet) formed in the second step. Specifically, as shown in FIG. 5, the source electrode 14 of the switching element 10 and the first solder connection portion 41 are opposed to each other, and the gate electrode 15 of the switching element 10 and the gate terminal 67 of the wiring sheet 60 are mutually connected. The monitor electrodes 16 to 19 and the monitor terminals 68 to 71 are opposed to each other. Further, the first main surface 21 of the flywheel diode 20 and the second solder connection portion 42 are opposed to each other. Then, the switching element 10 and the flywheel diode 20 are fixed with the first solder 101 (first solder connection step). As the first solder 101, solder having the same melting point as that of the third solder or solder having a lower melting point is used.

  In the fifth step, the assembly formed in the fourth step is placed on the conductive layer laminated substrate 80 of the case 90 and both are connected by the second solder 102 (second solder connection step). As the second solder 102, a solder having a lower melting point than either the first solder 101 or the third solder is used.

  In the sixth step, the switching element 10 and the flywheel diode 20 are sealed with the sealing resin 100. Specifically, the sealing resin 100 is filled in the case 90 with a potting machine and heated at a predetermined temperature to cure the sealing resin 100.

If necessary, a water cooling jacket (heat radiating device) is attached to the semiconductor device 1.
Specifically, a water cooling jacket is fixed to the outer surface of the first wiring body 40 of the semiconductor device 1. Filler-containing silicon-based thermal grease is used for fixing the water cooling jacket.

The operation of the method for manufacturing the semiconductor device 1 will be described.
In the method for manufacturing the semiconductor device 1, the switching element 10 and the flywheel diode 20 are placed on the wiring body 30 with a wiring sheet and soldered before the switching element 10 and the flywheel diode 20 are placed on the conductive layer laminated substrate 80 and soldered. In other words, the switching element 10 is soldered in a movable state. Thereby, at the time of solder connection, the switching element 10 can be moved to an appropriate position by the surface tension of the solder. That is, the switching element 10 can be positioned by self-alignment.

[Second manufacturing method]
The second manufacturing method will be described.
The first to third steps are the same as in the first assembly method. In the fourth step, the switching element 10 and the flywheel diode 20 are arranged on the conductive layer laminated substrate 80 of the case 90 and both are connected by the solder X. As the solder X, for example, solder having a melting point lower than that of the solder Z used for connection between the heat sink plate 93 of the case 90 and the conductive layer laminated substrate 80 is used.

  In the fifth step, the assembly (wiring body with wiring sheet 30) formed in the second step is arranged in the assembly formed in the fourth step, and both are fixed with solder Y. As the solder Y, a solder having a lower melting point than that of the solder X is used. The subsequent steps are the same as in the first assembly method.

  In the case of the second manufacturing method, it is possible to reverse the third and fourth steps. That is, after the switching element 10 and the flywheel diode 20 are arranged on the conductive layer laminated substrate 80, this assembly is arranged on the heat sink plate 93 of the case 90. Thereafter, the same process as described above is performed in the fifth step.

The operation of the method for manufacturing the semiconductor device 1 will be described.
In the manufacturing method of the semiconductor device 1, the switching element 10 and the flywheel diode 20 are arranged on the conductive layer laminated substrate 80 and fixed by soldering, and then arranged on the wiring body 30 with a wiring sheet and solder-connected. Since the wiring body 30 with the wiring sheet is supported by the second wiring body 50, the load on the first wiring body 40 applied to the switching element 10 and the flywheel diode 20 is smaller than in the case of the support structure. For this reason, the switching element 10 is in a movable state. For this reason, at the time of solder connection, the switching element 10 can be moved to an appropriate position by the surface tension of the solder. That is, the switching element 10 can be positioned by self-alignment.

[Third production method]
A third manufacturing method will be described.
The first to third steps are the same as in the first assembly method. In the fourth step, the switching element 10 and the flywheel diode 20 are disposed on the conductive layer multilayer substrate 80 of the case 90, and the wiring body 30 with a wiring sheet is further disposed on the multilayer body. Fix it. In the case of this manufacturing method, each member is solder-connected with one kind of solder. For this reason, it is easy to perform member management in production management. In addition, since the members are soldered together, the working time of the solder connection process is shortened.

[Second Embodiment]
The second embodiment will be described with reference to FIGS. 6 and 7.
In this embodiment, the following changes are added to the semiconductor device 1 of the first embodiment.

  That is, in the first embodiment, the first wiring body 40 is directly connected to the first external terminal 91, but in this embodiment, the conductive layer laminated substrate 80 is connected to the drain electrode 13 of the switching element 10. A conductive layer different from the conductive layer is formed, and the first wiring body 40 and the first external terminal 91 are connected via the separate conductive layer.

  Hereinafter, a change from the configuration of the semiconductor device 1 according to the first embodiment caused by this change will be described. In addition, about the structure which is common in the semiconductor device 1 of 1st Embodiment, the same code | symbol is attached | subjected and the description is abbreviate | omitted.

  The semiconductor device 201 includes a switching element 10, a flywheel diode 20, a wiring body 230 with a wiring sheet, a conductive layer laminated substrate 280, a case 290, and a sealing resin 100.

  The case 290 includes a heat sink plate 293 that forms the bottom wall of the semiconductor device 201 and a frame body 294 that forms the side wall. A conductive layer laminated substrate 280 is attached to the heat sink plate 293 of the case 290.

  The conductive layer laminated substrate 280 includes an insulating substrate 281, a first conductive layer 282 </ b> A formed on one surface of the insulating substrate 281, a second conductive layer 282 </ b> B, and a metal layer 283 formed on the other surface of the insulating substrate 281. I have. The first conductive layer 282A and the second conductive layer 282B are formed electrically independently.

  The wiring body 230 with the wiring sheet includes a first wiring body 240 and a wiring sheet 260. The arrangement relationship between the wiring sheet 260 and the first wiring body 240 is the same as in the first embodiment. That is, the wiring sheet 260 and the first wiring body 240 are fixed to each other in accordance with the arrangement relationship of the switching element 10 and the flywheel diode 20. In the first wiring body 240, a connection portion 241 that is solder-connected to the second conductive layer 282B is formed. The front end portion of the connection portion 241 (hereinafter referred to as “contact portion 241A”) is flattened. The contact portion 241A is in contact with the second conductive layer 282B.

A wiring structure of the semiconductor device 201 will be described.
The switching element 10 and the flywheel diode 20 are disposed in the first conductive layer 282A. The first conductive layer 282A is connected to the second external terminal 292 through the second connection wiring body 292A. That is, the first conductive layer 282A corresponds to the conductive layer 82 of the first embodiment.

The second conductive layer 282B is connected to the first wiring body 240 via the connection portion 241.
The second conductive layer 282B is connected to the first external terminal 291 through the first connection wiring body 291A.

  That is, the second conductive layer 282B is a conductor that connects the first wiring body 240 and the first connection wiring body 291A. The second conductive layer 282B is a conductive layer formed integrally with the conductive layer laminated substrate 280, and also functions as a heat sink that releases the heat of the first wiring body 240 to the outside.

The cooling action of the semiconductor device 201 will be described.
The semiconductor device 201 is radiated from the heat sink plate 293.
That is, since the heat sink plate 293 is connected to the switching element 10 that is a heating element via the conductive layer laminated substrate 80, heat diffuses from the back surface of the switching element 10, that is, the second main surface 12.

  On the other hand, a first wiring body 240 is connected to the first main surface 11 of the switching element 10. The first wiring body 240 is connected to the second conductive layer 282B. For this reason, heat diffuses from the first main surface 11 of the switching element 10 through the first wiring body 240 and the second conductive layer 282B. Thereby, the heat of the switching element 10 diffuses from the first main surface 11 and the second main surface 12.

[Third Embodiment]
A third embodiment will be described with reference to FIGS.
In this embodiment, the following changes are added to the semiconductor device 1 of the first embodiment. That is, the semiconductor device 1 of the first embodiment includes one switching element 10 and one flywheel diode 20. The semiconductor device 301 of this embodiment constitutes a three-phase inverter circuit that includes six switching elements 10 and six flywheel diodes 20 each.

  Hereinafter, a change from the configuration of the semiconductor device 1 according to the first embodiment caused by this change will be described. In addition, about the structure which is common in the semiconductor device 1 of 1st Embodiment, the same code | symbol is attached | subjected and the description is abbreviate | omitted.

The circuit configuration of the semiconductor device 301 will be described with reference to FIG.
Three circuit elements CU, CV, and CW are connected in parallel between the positive-voltage-side power supply wiring P and the low-voltage-side power supply wiring N.

The circuit element CU will be described.
The circuit element CU includes an upper switching element 10A, a lower switching element 10B, an upper flywheel diode (hereinafter, upper FWD 20A), and a lower flywheel diode (hereinafter, lower FWD 20B).

  The upper switching element 10A and the lower switching element 10B are connected in series. Further, an input / output wiring U is drawn out from a connection portion between the upper switching element 10A and the lower switching element 10B.

  An upper stage FWD 20A is connected in reverse and parallel to the upper stage switching element 10A. A lower stage FWD 20B is connected in a reverse direction and in parallel to the lower stage switching element 10B. The circuit configuration of the circuit element CV and the circuit element CW is the same as that of the circuit element CU.

The configuration of the semiconductor device 301 will be described with reference to FIGS. 9 and 10.
In the present embodiment, the arrangement direction of the first to third external terminals 391 to 393 is a vertical direction, and the direction perpendicular to the vertical direction is a horizontal direction.

  The semiconductor device 301 includes three upper switching elements 10A, 10C, 10E, three lower switching elements 10B, 10D, 10F, three upper FWDs 20A, 20C, 20E, and three lower FWDs 20B, 20D, 20F, wiring bodies with wiring sheets 330A to 330C, a conductive layer laminated substrate 380, and a case 390 are provided. Case 390 is filled with sealing resin 100.

  The case 390 includes a power supply terminal 394P corresponding to the power supply wiring P, a power supply terminal 394N corresponding to the power supply wiring N, a first external terminal 391 corresponding to the input / output wiring U, and a second external corresponding to the input / output wiring V. A terminal 392 and a third external terminal 393 corresponding to the input / output wiring W are attached. The first to third external terminals 391, 392, 393 are arranged in the vertical direction, and the first to third external terminals 391, 392, 393 are extended in the horizontal direction.

  On the conductive layer laminated substrate 380 of the case 390, six conductive layers, that is, first to sixth conductive layers 382A to 382F are formed. Each of the first to sixth conductive layers 382A to 382F is arranged in three rows in the vertical direction and two rows in the horizontal direction.

With reference to FIG. 9, the configuration of the partial CUx corresponding to the circuit element CU will be described.
The portion CUx corresponding to the circuit element CU includes an upper switching element 10A, a lower switching element 10B, an upper FWD 20A, a lower FWD 20B, and a wiring body 330A with a wiring sheet.

  Upper switching element 10A and upper FWD 20A are arranged in first conductive layer 382A. That is, the drain electrode (second upper electrode) of the upper switching element 10A is connected to the first conductive layer 382A. A cathode electrode (another electrode) of the upper FWD 20A is connected to the first conductive layer 382A.

  Lower switching element 10B and lower FWD 20B are arranged in second conductive layer 382B. That is, the drain electrode (second lower electrode) of the lower switching element 10B is connected to the second conductive layer 382B. The cathode electrode (other electrode) of the lower FWD 20B is connected to the second conductive layer 382B.

  Further, the upper switching element 10A, the lower switching element 10B, the upper FWD 20A, and the lower FWD 20B are arranged in a row in the horizontal direction. The upper switching element 10A and the lower switching element 10B are arranged so as to be sandwiched between the upper FWD 20A and the lower FWD 20B.

  The wiring body with wiring sheet 330A includes a first wiring body 340A, a second wiring body 350A, a third wiring body 370A, and a wiring sheet 360A. The first wiring body 340A is connected to the source electrode (first upper electrode) of the upper switching element 10A and the anode electrode (one electrode) of the upper FWD 20A, is connected to the first external terminal 391, and is connected to the second conductive layer 382B. It is connected to the.

A connection structure between the first wiring body 340A and the second conductive layer 382B is shown below.
In the first wiring body 340A, a connection portion 342 connected to the second conductive layer 382B is formed. The connecting portion 342 is provided so as to protrude from a portion (hereinafter, “flat portion 341”) connected to the upper switching element 10A and the upper FWD 20A in the first wiring body 340A. In the second conductive layer 382B, the portion where the connection portion 342 contacts is in a region between the upper switching element 10A and the lower switching element 10B. That is, the connecting portion 342 contacts the second conductive layer 382B at a substantially middle portion of the case 390 in the lateral direction.

The second wiring body 350A connects the first conductive layer 382A and the power supply terminal 394P to each other.
The second wiring body 350A is attached to the first wiring body 340A via an insulating spacer 354.

  The third wiring body 370A is connected to the source electrode (first lower electrode) of the lower switching element 10B and the anode electrode (one electrode) of the lower FWD 20B, and is connected to the power supply terminal 394N.

  The wiring sheet 360A branches into a first wiring part 361 (first wiring sheet) and a second wiring part 362 (second wiring sheet) at the tip portion. A gate terminal (control terminal) and a monitor terminal are provided at the tip of the first wiring part 361. Similarly, a gate terminal (control terminal) and a monitor terminal are also provided at the tip of the second wiring part 362.

  Each terminal of the first wiring portion 361 is connected to each monitor electrode and gate electrode (upper control electrode) of the upper switching element 10A. Each terminal of the second wiring portion 362 is connected to each monitor electrode and gate electrode (lower control electrode) of the lower switching element 10B. The wiring sheet 360A is fixed to the first wiring body 340A by thermocompression bonding.

  The connection structure of each component of the part corresponding to the circuit element CV and the connection structure of each component of the part corresponding to the circuit element CW are the same as the connection structure of each component of the part corresponding to the circuit element CU. It is.

Structural features of the semiconductor device 301 will be described.
As described above, the wiring sheet-equipped wiring body 330A includes the first wiring body 340A, the second wiring body 350A, the third wiring body 370A, and the wiring sheet 360A.

  A second wiring body 350A and a wiring sheet 360A are attached to the first wiring body 340A. On the other hand, the wiring sheet 360A is also attached to the third wiring body 370A. That is, the first wiring body 340A, the second wiring body 350A, the third wiring body 370A, and the wiring sheet 360A are integrated.

  When these members are not integrated, the manufacturing process of the semiconductor device 301 is as follows. That is, the wiring sheet 360A is first solder-connected to the assembly in which the switching elements 10A and 10B and the flywheel diodes 20A and 20B are arranged (hereinafter referred to as “element mounting assembly”), and then the second wiring body 350A is solder-connected. To do. Further, the third wiring body 370A is solder-connected, and finally the first wiring body 340A is solder-connected. Thus, the solder connection process is required four times only by connecting the portion corresponding to the wiring body with wiring sheet 330A.

  On the other hand, the wiring sheet-equipped wiring body 330A having the above-described configuration has an integrated configuration as described above, and thus can be attached to the element mounting assembly in a lump. For this reason, a solder connection process can also be performed at once.

  In addition, the wiring body with wiring sheet 330A is supported from below by a connecting portion 342 and a second wiring body 350A extending from the first wiring body 340A. For this reason, the load of the wiring body 330A with a wiring sheet applied to each element 10A, 10B, 20A, 20B is small.

Further, when these members are not integrated, there is the following problem.
When the wiring body 330A with a wiring sheet is placed and soldered to the element mounting assembly, a load is applied to each element 10A, 10B, 20A, 20B, and the movement of each element 10A, 10B, 20A, 20B when the solder melts Is inhibited. That is, the element self-alignment effect due to the solder tension at the time of solder melting is less likely to occur, and the elements 10A, 10B, 20A, and 20B may not be arranged at appropriate positions.

  On the other hand, the wiring sheet-equipped wiring body 330A having the above-described configuration is supported by the connection portion 342 from the lower side, and has a structure in which a load is not easily applied to each element 10A, 10B, 20A, 20B. For this reason, when the solder is melted, a self-alignment action of each element 10A, 10B, 20A, 20B occurs.

[Fourth Embodiment]
A fourth embodiment will be described with reference to FIGS.
In this embodiment, a modification of the third embodiment is shown. That is, in the third embodiment, the components corresponding to the circuit elements CU, CV, and CW are arranged in the vertical direction, and the elements of the components are arranged in one row in the horizontal direction. That is, the arrangement of the elements is 3 rows and 4 columns. In the present embodiment, the components corresponding to the circuit elements CU, CV, and CW are arranged in the vertical direction, and the elements of the components are arranged in two rows. That is, the array configuration of each element is 6 rows and 2 columns.

  Hereinafter, a change from the configuration of the semiconductor device 301 according to the third embodiment, which is caused by this change, will be described. In addition, about the structure which is common in the semiconductor device 301 of 3rd Embodiment, the same code | symbol is attached | subjected and the description is abbreviate | omitted. In the following description, the direction in which the first to sixth conductive layers 482A to 482F are arranged is the vertical direction, and the direction perpendicular to the vertical direction is the horizontal direction. In the case 490, the side wall on which the first to third external terminals 491 to 493 are arranged is a first side wall 495, and the opposite side wall is a second side wall 496.

The semiconductor device 401 of this embodiment will be described.
The circuit configuration of the semiconductor device 401 is the same as that of the semiconductor device 301 of the third embodiment.
The semiconductor device 401 includes six switching elements 10A to 10F, six flywheel diodes 20A to 20F, three wiring bodies 430A to 430C with wiring sheets, a conductive layer laminated substrate 480, a case 490, And a sealing resin 100.

  The case 490 includes a power supply terminal 494P corresponding to the power supply wiring P, a power supply terminal 494N corresponding to the power supply wiring N, a first external terminal 491 corresponding to the input / output wiring U, and a second external corresponding to the input / output wiring V. A terminal 492 and a third external terminal 493 corresponding to the input / output wiring W are attached.

  The power supply terminal 494 </ b> P, the power supply terminal 494 </ b> N, and the first to third external terminals 491, 492, 493 are disposed on the first side wall 495 side of the case 490. The power supply terminal 494P is connected to a first bus bar 497 provided on the first side wall 495 side of the case 490. The power supply terminal 494N is connected to the second bus bar 498 provided on the first side wall 495 side of the case 490.

  The first bus bar 497 and the second bus bar 498 are provided at positions higher than the surfaces of first to sixth conductive layers 482A to 482F, which will be described later, and are formed at a predetermined distance from the respective conductive layers 482A to 482F. .

  On the conductive layer laminated substrate 480 of the case 490, six conductive layers, that is, first to sixth conductive layers 482A to 482F are formed. The first to sixth conductive layers 482A to 482F are arranged in a line in the vertical direction.

  In each first conductive layer 482A, a switching element 10A and an upper stage FWD 20A are arranged. The upper switching element 10A is disposed on the second side wall 496 side, and the upper stage FWD 20A is disposed on the first side wall 495 side. Each element is arranged in the same manner in the second to sixth conductive layers 482B to 482F.

The part corresponding to the circuit element CU will be described with reference to FIG.
The wiring body with a wiring sheet 430A includes a first wiring body 440A, a second wiring body 450A, a third wiring body 470A, and a wiring sheet 460A.

  The first wiring body 440A includes a flat portion 441 and a connection portion 442 provided so as to protrude from the flat portion 441. The flat portion 441 is connected to the source electrode of the upper switching element 10A and the anode electrode of the upper FWD 20A. The connection portion 442 is connected to the second conductive layer 482B. The first wiring body 440A extends to the first side wall 495 side and is connected to the first external terminal 491.

  The second wiring body 450A is fixed to the first wiring body 440A via an insulating spacer 454. One end of the second wiring body 450A is connected to the first bus bar 497. The other end of the second wiring body 450A is connected to the first conductive layer 482A.

  The third wiring body 470A extends toward the first side wall 495 and is connected to the second bus bar 498. Further, the flat portion of the third wiring body 470A is connected to the source electrode of the lower switching element 10B and the anode electrode of the lower FWD 20B.

  The wiring sheet 460A includes a first wiring part 461 connected to the upper switching element 10A and a second wiring part 462 connected to the lower switching element 10B. The first wiring portion 461 and the second wiring portion 462 are drawn out to the second side wall 496 side of the case 490.

  As described above, the first wiring body 440A, the second wiring body 450A, and the third wiring body 470A are drawn out to the first side wall 495 side. On the other hand, the first wiring portion 461 and the second wiring portion 462 of the wiring sheet 460A are drawn out to the second side wall 496 side. The configurations of the circuit element CV and the circuit element CW are the same as the configuration of the circuit element CV.

  The connection structure of each component of the part corresponding to the circuit element CV and the connection structure of each component of the part corresponding to the circuit element CW are the same as the connection structure of each component of the part corresponding to the circuit element CU. It is.

Structural features of the semiconductor device 401 will be described.
A large current flows through the power supply wiring P on the positive voltage side and the power supply wiring N on the low voltage side of the inverter circuit. For this reason, a strong magnetic field is generated around the power supply wiring P and the power supply wiring N. When magnetic flux fluctuations occur, noise is formed in the surrounding wiring. That is, noise may occur in the wiring 61 due to fluctuations in the electric field of the power supply wiring P or the power supply wiring N.

  In the present embodiment, the power supply wiring P and the power supply wiring N, and the wiring sheet 460A that is signal wiring are arranged at positions facing each other with the case interposed therebetween. That is, the distance between the power supply wiring P and the power supply wiring N and the wiring sheet 460A is increased, and the two are made orthogonal. Thereby, since the interlinkage magnetic flux of the wiring sheet 460 </ b> A can be reduced, generation of noise generated in the wiring 61 can be suppressed.

  Further, with the above wiring structure, the wiring length from each of the external terminals 491 to 493 to each of the lower switching elements 10B, 10D, and 10F can be shortened as compared with the semiconductor device 301 of the third embodiment. Thereby, the inductance of wiring reduces and a surge voltage falls.

In addition, it has the following structural features.
Due to the configuration of the inverter circuit, the first conductive layer 482A, the third conductive layer 482C, and the fifth conductive layer 482E are connected to each other. Similarly, the second conductive layer 482B, the fourth conductive layer 482D, and the sixth conductive layer 482F are connected to each other. In the conventional structure, on the conductive layer laminated substrate 480, the first conductive layer 482A, the third conductive layer 482C, and the fifth conductive layer 482E are connected to each other by a wiring pattern. Similarly, the second conductive layer 482B, the fourth conductive layer 482D, and the sixth conductive layer 482F are connected to each other by a wiring pattern on the conductive layer laminated substrate 480. In such a configuration, the bottom area of the semiconductor device is a size obtained by adding the first to sixth conductive layers 482A to 482F, the wiring pattern, and a space for securing a space therebetween.

  On the other hand, in this embodiment, a wiring pattern is not formed on the conductive layer laminated substrate 480, and the first conductive layer 482A, the third conductive layer 482C, and the fifth conductive layer 482E are connected to each other by the first bus bar 497. Similarly, the second conductive layer 482B, the fourth conductive layer 482D, and the sixth conductive layer 482F are connected to each other by the second bus bar 498.

  The first bus bar 497 and the second bus bar 498 are provided in the vicinity of the first side wall 495 of the case 490 and are disposed at positions higher than the conductive layers 482A to 482F. That is, the insulation distance is ensured by the height. For this reason, the distance between each of the conductive layers 482A to 482F and the bus bar is larger than the distance between each of the conductive layers 482A to 482F having the conventional structure and the wiring pattern at the distance at which the bus bar is projected onto the bottom surface of the semiconductor device 401. small. That is, the semiconductor device 401 of the present embodiment is smaller than the semiconductor device having the conventional structure in comparison with the bottom area.

Hereinafter, effects of the embodiments will be described.
(1) In 1st Embodiment, the wiring body 30 with a wiring sheet is used as an upper side wiring structure (wiring structure) of a semiconductor device. The wiring body 30 with a wiring sheet includes a first wiring body 40 and a wiring sheet 60. A wiring sheet 60 is attached to the main surface 40A of the first wiring body 40, and the first wiring body 40 and the wiring sheet 60 are integrated.

  That is, instead of the conventional wire connection, the first wiring body 40 is connected to the source electrode 14. Thereby, since it is not necessary to perform many wire connection operations unlike the conventional structure, the connection operations can be simplified. Further, since the wiring sheet 60 is fixed to the first wiring body 40, the first wiring body 40 and the wiring sheet 60 can be connected to the switching element 10 at once. For this reason, it is not necessary to attach the 1st wiring body 40 and the wiring sheet 60 separately. That is, the manufacturing process of the semiconductor device 1 can be simplified.

  (2) In the first embodiment, the arrangement relationship between the first solder connection part 41 (connection part) of the first wiring body 40 and the terminals 67 to 71 of the wiring sheet 60 is different from the source electrode 14 of the switching element 10 and each of the terminals 67 to 71. The wiring sheet 60 is fixed to the first wiring body 40 so as to correspond to the arrangement relationship with the electrodes 15 to 19.

  In this configuration, the source electrode 14 and the first solder connection portion 41 of the switching element 10 and the electrodes 15 to 19 of the switching element 10 and the terminals 67 to 71 of the wiring sheet 60 can be accurately connected.

  (3) In the first embodiment, in the wiring body 30 with the wiring sheet, the first solder connection portion 41 is surrounded by the extended portion of the wiring sheet 60. That is, the first solder connection portion 41 is provided in the first through hole 64.

  According to this configuration, it is possible to prevent the solder used when connecting the first wiring body 40 and the source electrode 14 of the switching element 10 from diffusing outside the first solder connection portion 41. When the solder diffuses, the switching element 10 may move and the switching element 10 may not be fixed at a predetermined position. However, according to this configuration, since the movement of the switching element 10 is suppressed, there is a large positional shift. Hard to occur.

  (4) In the first embodiment, the second wiring body 50 is fixed to the first wiring body 40 via the insulating spacer 54. That is, the 1st wiring body 40, the wiring sheet 60, and the 2nd wiring body 50 are united. For this reason, since it is not necessary to connect these members individually, the manufacturing process of the semiconductor device 1 can be further simplified.

  (5) In the first embodiment, the first wiring body 40 has a first solder connection portion 41 connected to the switching element 10 (another semiconductor element) and a second solder connection portion connected to the flywheel diode 20. 42 is provided. Moreover, it is also possible to provide a connection part for connecting another element to the first wiring body 40. That is, the configuration of the wiring body 30 with the wiring sheet can also be applied to an upper wiring structure (wiring structure) of a semiconductor device including a plurality of elements.

  (6) The semiconductor device 1 of 1st Embodiment is provided with the wiring body 30 with a wiring sheet of the said structure. By using the wiring body 30 with the wiring sheet, a plurality of members can be packaged together, so that the manufacturing process of the semiconductor device 1 can be simplified.

  (7) In the manufacturing method (first to third manufacturing methods) of the semiconductor device 1 according to the first embodiment, the wiring body 30 with the wiring sheet is formed, and then the wiring body 30 with the wiring sheet, the switching element 10 and the like. And connect. That is, by integrating the first wiring body 40 and the wiring sheet 60, these members can be attached to the switching element 10 and the like at a time, so that the manufacturing process can be simplified.

  (8) In the manufacturing method (first manufacturing method) of the semiconductor device 1 of the first embodiment, the switching element 10 and the like are connected to the wiring body 30 with the wiring sheet by solder (first solder connection step). Next, the conductive layer laminated substrate 80 is connected to the assembly in the first solder connection step by solder (second solder connection step).

  According to this manufacturing method, before the switching element 10 is fixed to the conductive layer laminated substrate 80, the switching element 10 is connected to the wiring body 30 with the wiring sheet by soldering. In other words, the switching element 10 is soldered in a movable state. Thereby, at the time of solder connection, the switching element 10 can be moved to an appropriate position by the surface tension of the solder. That is, since the switching element 10 is positioned by self-alignment, a short circuit between the source electrode 14 and each of the electrodes 15 to 19 is suppressed.

  (9) In the manufacturing method (first manufacturing method) of the semiconductor device 1 according to the first embodiment, solder having a melting point lower than that of the solder in the first solder connection step is used in the second solder connection step. That is, the solder used for the second main surface 12 side solder connection (second solder connection step) to be performed later is used for the first main surface 11 side solder connection (first solder connection step) performed first. Melting point is lower than solder.

  According to this configuration, in the second solder connection step, the melting of the solder formed previously can be reduced, so that it is possible to suppress misalignment between components soldered before this step.

  The configurations (1) to (9) are provided in the semiconductor devices 201, 301, and 401 of other embodiments. For this reason, also in each of these embodiments, the effects (1) to (9) can be obtained.

  (10) In the second embodiment, the first wiring body 240 is provided with a contact portion 241 </ b> A that contacts the conductive layer laminated substrate 280. In this configuration, the first wiring body 240 is brought into contact with the conductive layer laminated substrate 280. That is, the first wiring body 240 is cooled through the conductive layer laminated substrate 280. Thereby, the switching element 10 is cooled from the drain electrode 13 side and from the source electrode 14 side. For this reason, overheating of the switching element 10 is suppressed.

  (11) In the third embodiment, in the semiconductor device 301 in which the upper switching element 10A and the lower FWD element 10B are connected in series, and the FWDs 20A and 20B are connected in parallel to the switching elements 10A and 10B in the opposite direction. The wiring bodies with wiring sheets 330A to 330C have the following configuration. The wiring body with wiring sheet 330A includes a first wiring body 340A, a second wiring body 350A, a third wiring body 370A, a first wiring portion 361 (first wiring sheet), and a second wiring portion 362 (second wiring). Wiring sheet 360A including the sheet), and these members are connected to each other and integrated.

  According to such a configuration, it is not necessary to individually connect these members in the manufacturing process of the semiconductor device 301. That is, since it was necessary to individually solder each member, it took a long time for the entire assembly work, but since solder connection can be performed in a lump, the time of the solder connection process can be shortened. Can do.

  (12) In the fourth embodiment, the drain electrodes of the upper switching elements 10A, 10C, and 10E of the circuit elements are connected to the first bus bar via the conductive layers 482A to 482F and the second wiring bodies 450A, 450B, and 450C. 497. The source electrodes of the lower switching elements 10B, 10D, and 10F of the circuit elements are connected to the second bus bar 498 via the conductive layers 482A to 482F and the third wiring bodies 470A, 470B, and 470C. The first bus bar 497 and the second bus bar 498 are disposed on the first side wall 495 side, and are provided at positions higher than the first to sixth conductive layers 482A to 482F.

  According to such a configuration, the first conductive layer 482A, the third conductive layer 482C, and the fifth conductive layer 482E are connected by the wiring pattern, and the second conductive layer 482B, the fourth conductive layer 482D, and the second conductive layer 482D are connected to each other. The bottom area can be made smaller than that of a semiconductor device having a structure in which the six conductive layers 482F are connected by a wiring pattern.

(Other embodiments)
In addition, the embodiment of the present invention is not limited to the embodiment shown in each of the above-described embodiments, and can be implemented by changing it as shown below, for example. In addition, the following modifications can be implemented by combining different modifications with each other.

  -In 1st Embodiment, conductive layer lamination | stacking, such as DBA, is used as a wiring structure (henceforth "lower wiring structure") arrange | positioned at the drain electrode 13 side of the switching element 10, and the cathode electrode side of the flywheel diode 20. Although the substrate 80 is used, the lower wiring structure is not limited to a ceramic substrate such as DBA. The lower wiring structure is required to have a conductive layer, a high thermal conductivity, and an insulating layer. That is, a substrate that satisfies these requirements can be employed as the lower wiring structure.

  For example, instead of DBA, a laminated plate of a copper substrate and a polyimide sheet, or a laminated plate in which a heat sink plate is laminated on the laminated plate can be used. Also, Cu / Mo / Cu laminates, Cu—Mo alloys (Cu—Mo composite materials), Cu—W alloys (Cu—W composite materials), Al—SiC alloys, Kovar (Fe—Ni—Co), tungsten ( A buffer base material such as W), molybdenum (Mo), iron (Fe), 42 alloy (Fe—Ni), etc. can also be employed as the conductive layer.

  -In 1st Embodiment, although the heat sink board 93 is provided as a part of case 90, this is also omissible. Moreover, it is good also as a structure which replaces with the heat sink board 93 and sticks buffer equipment with a small expansion coefficient.

  In the second embodiment, the second conductive layer 282B is formed on the conductive layer laminated substrate 280, and the first wiring body 240 and the first external terminal 291 are connected via the second conductive layer 282B. Thereby, the thermal diffusion from the first main surface 11 of the switching element 10 is increased. That is, the first wiring body 240 is connected to the second conductive layer 282B, and the second conductive layer 282B is connected to the first external terminal 291 through the first connection wiring body 291A.

  On the other hand, thermal diffusion from the first main surface 11 of the switching element 10 can be increased also by the following configuration. That is, the second conductive layer 282B is not formed on the conductive layer laminated substrate 280, and the first wiring body 240 is brought into contact with the conductive layer laminated substrate 280. For example, the first wiring body 240 is bent and the first wiring body 240 and the first external terminal 291 are connected. Then, the conductive layer laminated substrate 280 is brought into contact with the curved portion of the first wiring body 240. Thermal grease may be applied to the contact portion. That is, by bringing a part of the first wiring body 240 into contact with the conductive layer laminated substrate 280, the thermal diffusion from the first main surface 11 of the switching element 10 can be increased.

  Further, instead of the configuration in which the first wiring body 240 is bent and the first wiring body 240 and the conductive layer laminated substrate 280 are brought into contact with each other, the heat transfer body is drawn from the conductive layer laminated substrate 280, and the heat transfer body and the first wiring It is good also as a structure which connects the body 240. FIG.

  In each of the above embodiments, each member is solder-connected with solder, but the solder connection form is not limited. That is, various solder connection methods such as solder plating, solder paste, and solder preform can be used for the solder connection.

  In each of the above embodiments, a flexible printed board is used as the wiring sheet 60, but a so-called flat cable can also be used. Even in the case of this configuration, at least the same effect as the above (1) can be obtained.

  In each of the above embodiments, the present invention is applied to the wiring structure of the semiconductor device 1 in which the switching element 10 and the flywheel diode 20 are connected in parallel, but the wiring structure of the semiconductor device 1 including only the switching element 10 The present invention can also be applied to.

  In each of the above embodiments, an n-type MOSFET is used as the switching element 10, but the type of the switching element 10 is not limited. In other words, the present invention can be applied to a wiring structure of a semiconductor device including the switching element 10 having two or more electrodes. Other examples of the switching element 10 include, for example, a MOSFET, a Si-IGBT, a SiC-IGBT, and the like using a group III nitride material such as GaN.

    DESCRIPTION OF SYMBOLS 1 ... Semiconductor device, 10 ... Switching element, 10A ... Upper stage switching element, 10B ... Lower stage switching element, 11 ... 1st main surface, 12 ... 2nd main surface, 13 ... Drain electrode, 14 ... Source electrode, 15 ... Gate electrode , 16 ... 1st monitor electrode, 17 ... 2nd monitor electrode, 18 ... 3rd monitor electrode, 19 ... 4th monitor electrode, 20 ... Flywheel diode, 20A ... Upper stage FWD, 20B ... Lower stage FWD, 21 ... 1st main Surface, 22 ... second main surface, 30 ... wiring body with wiring sheet, 40 ... first wiring body, 40A ... main surface, 41 ... first solder connecting portion, 42 ... second solder connecting portion, 50 ... second wiring Body 51... First connecting portion 52. Second connecting portion 53. Intermediate portion 54. Insulating spacer 60. Wiring sheet 60 A. Fixing portion 60 B lead portion 61 wiring 62 reinforcing plate 63A ... 1st poly Mid layer, 63B ... second polyimide layer, 64 ... first through hole, 65 ... second through hole, 66 ... opening, 67 ... gate terminal, 68 ... first monitor terminal, 69 ... second monitor terminal, 70 ... 3rd monitor terminal, 71 ... 4th monitor terminal, 80 ... conductive layer laminated substrate, 81 ... insulating substrate, 82 ... conductive layer, 83 ... metal layer, 90 ... case, 91 ... first external terminal, 92 ... second external Terminal, 93 ... Heat sink plate, 94 ... Frame, 95 ... First side wall, 96 ... Second side wall, 100 ... Sealing resin, 101 ... First solder, 101A ... First solder layer, 101B ... Second solder layer, DESCRIPTION OF SYMBOLS 101C ... Solder layer, 102 ... 2nd solder, 201, 301, 401 ... Semiconductor device, 230 ... Wiring body with a wiring sheet, 240 ... 1st wiring body, 241 ... Connection part, 241A ... Contact part, 260 ... Wiring sheet, 280 ... conductive layer laminated substrate, 281 ... Edge substrate, 282A ... first conductive layer, 282B ... second conductive layer, 283 ... metal layer, 290 ... case, 291 ... first external terminal, 292 ... second external terminal, 291A ... first connection wiring body, 292A ... Second connection wiring body, 293 ... heat sink plate, 294 ... frame body, 330A ... wiring body with wiring sheet, 340A ... first wiring body, 341 ... flat portion, 342 ... connection portion, 350A ... second wiring body, 354 ... Insulating spacer, 360A ... wiring sheet, 361 ... first wiring portion, 362 ... second wiring portion, 370A ... third wiring body, 380, 480 ... conductive layer laminated substrate, 382A, 482A ... first conductive layer, 382B, 482B ... 2nd conductive layer, 390, 490 ... Case, 391, 491 ... 1st external terminal, 392, 492 ... 2nd external terminal, 393, 493 ... 3rd external terminal, 394P, 494P ... Power supply Terminals, 394N, 494N ... power supply terminals, 430A ... wiring body with wiring sheet, 440A ... first wiring body, 441 ... flat part, 442 ... connection part, 450A ... second wiring body, 454 ... insulating spacer, 460A ... wiring sheet 461 ... first wiring part, 462 ... second wiring part, 470A ... third wiring body, 495 ... first side wall, 496 ... second side wall, 497 ... first bus bar, 498 ... second bus bar.

Claims (13)

A switching element having at least a first electrode and a control electrode formed on a first main surface and a second electrode formed on a second main surface; a conductive layer laminated substrate connected to the second electrode; and the first electrode And a wiring device with a wiring sheet used as the wiring structure of the semiconductor device, the semiconductor device comprising a wiring structure connected to the control electrode,
A wiring body connected to the first electrode; and a wiring sheet provided with a control terminal connected to the control electrode, wherein the wiring sheet is attached to a surface of the wiring body to which the first electrode is connected. A wiring body with a wiring sheet, characterized in that In the wiring body with a wiring sheet according to claim 1,
The arrangement relationship between the connection portion connected to the first electrode on the main surface of the wiring body and the control terminal of the wiring sheet is determined by the relationship between the first electrode and the control electrode on the first main surface of the switching element. The wiring body with a wiring sheet, wherein the wiring sheet is fixed to the wiring body so as to correspond to an arrangement relationship. In the wiring body with a wiring sheet according to claim 2,
The wiring body with a wiring sheet, wherein the connection portion is surrounded by an extension of the wiring sheet. In the wiring body with a wiring sheet according to any one of claims 1 to 3,
The wiring body as a first wiring body,
A wiring with a wiring sheet, further comprising a second wiring body connected to the conductive layer of the conductive layer laminated substrate, wherein the second wiring body is fixed to the first wiring body via an insulating spacer. body. In the wiring body with a wiring sheet according to any one of claims 1 to 4,
The wiring body with a wiring sheet, wherein the wiring body is provided with a contact portion that contacts the conductive layer laminated substrate. In the wiring body with a wiring sheet according to any one of claims 1 to 5,
It is used as the wiring structure of a semiconductor device including a switching element and other semiconductor elements,
A connection part connected to the first electrode in the wiring body as a first connection part,
A wiring body with a wiring sheet, wherein the wiring body is provided with a second connection portion connected to an electrode of the other semiconductor element.   The semiconductor device provided with the wiring body with a wiring sheet as described in any one of Claims 1-6. A switching element having at least a first electrode and a control electrode formed on a first main surface and a second electrode formed on a second main surface;
A conductive layer laminated substrate connected to the second electrode;
A wiring body connected to the first electrode;
In a semiconductor device comprising a wiring sheet connected to the control electrode,
A semiconductor device, wherein the wiring sheet is attached to and integrated with the wiring body. A switching element having at least a first electrode and a control electrode formed on a first main surface and a second electrode formed on a second main surface;
A flywheel diode,
A conductive layer laminated substrate connected to the second electrode of the switching element and one electrode of the flywheel diode;
A wiring body connected to the first electrode of the switching element and the other electrode of the flywheel diode;
In a semiconductor device comprising a wiring sheet connected to the control electrode,
A semiconductor device, wherein the wiring sheet is attached to and integrated with the wiring body. An upper switching element in which at least a first upper electrode and an upper control electrode are formed on the first main surface and a second upper electrode is formed on the second main surface;
A lower switching element having at least a first lower electrode and a lower control electrode formed on the first main surface and a second lower electrode formed on the second main surface;
An upper stage flywheel diode in which one electrode and another electrode are formed;
A lower flywheel diode in which one electrode and another electrode are formed;
A first conductive layer and a second conductive layer are formed, connected to the second upper electrode of the upper switching element and the other electrode of the upper flywheel diode through the first conductive layer, and the second conductive layer A conductive layer laminated substrate connected to the second lower electrode of the lower switching element and the other electrode of the lower flywheel diode via
A first wiring body connected to the first upper electrode of the upper switching element and one electrode of the upper flywheel diode and connected to the second conductive layer;
A second wiring body fixed to the first wiring body through an insulating spacer and connected to the first conductive layer;
A third wiring body connected to the first lower electrode of the lower switching element and one electrode of the lower flywheel diode;
A first wiring sheet fixed to the first wiring body and connected to the upper control electrode of the upper switching element;
A semiconductor device, comprising: a second wiring sheet fixed to the third wiring body and connected to the lower control electrode of the lower switching element. A switching element having at least a first electrode and a control electrode formed on the first main surface and a second electrode formed on the second main surface; a conductive layer laminated substrate connected to the second electrode; and the first A method of manufacturing a semiconductor device including a wiring body connected to an electrode and a wiring sheet connected to the control electrode,
A process for forming a wiring body with a wiring sheet by integrating the wiring body and the wiring sheet, and a step of connecting the wiring body with a wiring sheet and the switching element. Method. In the manufacturing method of the semiconductor device according to claim 11,
A first solder connection step of connecting the switching element to the wiring body with the wiring sheet by solder;
A method of manufacturing a semiconductor device, comprising: a second solder connection step of connecting the conductive layer laminated substrate by solder to the assembly of the first solder connection step. In the manufacturing method of the semiconductor device according to claim 12,
In the second solder connection step, a solder having a melting point lower than that of the solder in the first solder connection step is used.

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