JP2013074088A - 荷電粒子線描画装置、描画データ生成方法、描画データ生成プログラム、それを用いた物品の製造方法 - Google Patents

荷電粒子線描画装置、描画データ生成方法、描画データ生成プログラム、それを用いた物品の製造方法 Download PDF

Info

Publication number
JP2013074088A
JP2013074088A JP2011211863A JP2011211863A JP2013074088A JP 2013074088 A JP2013074088 A JP 2013074088A JP 2011211863 A JP2011211863 A JP 2011211863A JP 2011211863 A JP2011211863 A JP 2011211863A JP 2013074088 A JP2013074088 A JP 2013074088A
Authority
JP
Japan
Prior art keywords
blanking
drawing data
change
charged particle
deflector array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2011211863A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013074088A5 (enExample
Inventor
Toru Yamazaki
通 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2011211863A priority Critical patent/JP2013074088A/ja
Priority to US13/629,994 priority patent/US20130078577A1/en
Publication of JP2013074088A publication Critical patent/JP2013074088A/ja
Publication of JP2013074088A5 publication Critical patent/JP2013074088A5/ja
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H01J2237/0437—Semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31752—Lithography using particular beams or near-field effects, e.g. STM-like techniques
    • H01J2237/31754—Lithography using particular beams or near-field effects, e.g. STM-like techniques using electron beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31774—Multi-beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
JP2011211863A 2011-09-28 2011-09-28 荷電粒子線描画装置、描画データ生成方法、描画データ生成プログラム、それを用いた物品の製造方法 Abandoned JP2013074088A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011211863A JP2013074088A (ja) 2011-09-28 2011-09-28 荷電粒子線描画装置、描画データ生成方法、描画データ生成プログラム、それを用いた物品の製造方法
US13/629,994 US20130078577A1 (en) 2011-09-28 2012-09-28 Charged particle beam drawing apparatus, drawing data generation method, drawing data generation program storage medium, and article manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011211863A JP2013074088A (ja) 2011-09-28 2011-09-28 荷電粒子線描画装置、描画データ生成方法、描画データ生成プログラム、それを用いた物品の製造方法

Publications (2)

Publication Number Publication Date
JP2013074088A true JP2013074088A (ja) 2013-04-22
JP2013074088A5 JP2013074088A5 (enExample) 2014-11-06

Family

ID=47911641

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011211863A Abandoned JP2013074088A (ja) 2011-09-28 2011-09-28 荷電粒子線描画装置、描画データ生成方法、描画データ生成プログラム、それを用いた物品の製造方法

Country Status (2)

Country Link
US (1) US20130078577A1 (enExample)
JP (1) JP2013074088A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017522716A (ja) * 2014-06-13 2017-08-10 インテル・コーポレーション 電子ビームの非ユニバーサルカッタ
JP2021022731A (ja) * 2019-07-25 2021-02-18 株式会社ニューフレアテクノロジー マルチビーム描画方法及びマルチビーム描画装置
JP2021132065A (ja) * 2020-02-18 2021-09-09 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
KR20230039549A (ko) * 2021-09-14 2023-03-21 가부시키가이샤 뉴플레어 테크놀로지 멀티 하전 입자 빔 묘화 방법, 멀티 하전 입자 빔 묘화 장치 및 컴퓨터 판독 가능한 기록 매체
US11908659B2 (en) 2021-06-14 2024-02-20 Nuflare Technology, Inc. Multi charged particle beam writing apparatus

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013008878A (ja) * 2011-06-24 2013-01-10 Canon Inc 描画装置、物品の製造方法、及び処理装置
JP6215586B2 (ja) * 2012-11-02 2017-10-18 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
JP6212299B2 (ja) * 2013-06-26 2017-10-11 キヤノン株式会社 ブランキング装置、描画装置、および物品の製造方法
JP6262024B2 (ja) * 2014-03-04 2018-01-17 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置
CN106537556B (zh) 2014-08-19 2021-09-07 英特尔公司 利用电子束通用切具的交叉扫描接近度校正
CN106716597B (zh) * 2014-08-19 2021-02-23 英特尔公司 用于电子束(ebeam)直接写入系统的圆角化校正
JP6700152B2 (ja) * 2016-10-18 2020-05-27 株式会社ニューフレアテクノロジー マルチビーム焦点調整方法およびマルチビーム焦点測定方法
JP7548862B2 (ja) * 2021-04-05 2024-09-10 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5433392Y2 (enExample) * 1974-06-20 1979-10-15 Sony Corp
US4125772A (en) * 1977-10-13 1978-11-14 American Optical Corporation Scanning electron microscope with eddy-current compensation
JP3971174B2 (ja) * 2001-12-04 2007-09-05 株式会社アドバンテスト 露光方法、電子ビーム露光装置、及び電子部品製造方法
JP4652830B2 (ja) * 2005-01-26 2011-03-16 キヤノン株式会社 収差調整方法、デバイス製造方法及び荷電粒子線露光装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017522716A (ja) * 2014-06-13 2017-08-10 インテル・コーポレーション 電子ビームの非ユニバーサルカッタ
JP2021022731A (ja) * 2019-07-25 2021-02-18 株式会社ニューフレアテクノロジー マルチビーム描画方法及びマルチビーム描画装置
JP7484523B2 (ja) 2019-07-25 2024-05-16 株式会社ニューフレアテクノロジー マルチビーム描画方法及びマルチビーム描画装置
JP2021132065A (ja) * 2020-02-18 2021-09-09 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP7458817B2 (ja) 2020-02-18 2024-04-01 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
US11908659B2 (en) 2021-06-14 2024-02-20 Nuflare Technology, Inc. Multi charged particle beam writing apparatus
KR20230039549A (ko) * 2021-09-14 2023-03-21 가부시키가이샤 뉴플레어 테크놀로지 멀티 하전 입자 빔 묘화 방법, 멀티 하전 입자 빔 묘화 장치 및 컴퓨터 판독 가능한 기록 매체
KR102857729B1 (ko) * 2021-09-14 2025-09-11 가부시키가이샤 뉴플레어 테크놀로지 멀티 하전 입자 빔 묘화 방법, 멀티 하전 입자 빔 묘화 장치 및 컴퓨터 판독 가능한 기록 매체

Also Published As

Publication number Publication date
US20130078577A1 (en) 2013-03-28

Similar Documents

Publication Publication Date Title
JP2013074088A (ja) 荷電粒子線描画装置、描画データ生成方法、描画データ生成プログラム、それを用いた物品の製造方法
US6903353B2 (en) Charged particle beam exposure apparatus, device manufacturing method, and charged particle beam applied apparatus
JP3796317B2 (ja) 電子ビーム露光方法及びそれを用いたデバイス製造方法
US7459705B2 (en) Charged particle beam exposure method of character projection system, charged particle beam exposure device of character projection system, program for use in charged particle beam exposure device, and manufacturing method of semiconductor device
US6274877B1 (en) Electron beam exposure apparatus
US8143588B2 (en) Deflector array, exposure apparatus, and device manufacturing method
JP2000277417A (ja) 荷電粒子線露光装置及び該装置を用いたデバイス製造方法
JP4612838B2 (ja) 荷電粒子線露光装置およびその露光方法
JP5836773B2 (ja) 描画装置、及び物品の製造方法
JP6087570B2 (ja) 描画装置、および物品の製造方法
US9171698B2 (en) Drawing apparatus, and method of manufacturing article
JP2014107401A (ja) 描画装置、それを用いた物品の製造方法
JP2015035563A (ja) 描画データの生成方法、処理装置、プログラム、描画装置、および物品の製造方法
US9558916B2 (en) Lithography system and method of manufacturing articles
KR20140130029A (ko) 묘화 장치 및 물품의 제조 방법
JP2013021215A (ja) ビーム計測装置、描画装置、および物品の製造方法
US20150131075A1 (en) Drawing apparatus, and method of manufacturing article
US20130344443A1 (en) Lithography apparatus, and method of manufacture of product
JP4477436B2 (ja) 荷電粒子線露光装置
US20140349235A1 (en) Drawing apparatus, and method of manufacturing article
JP4143204B2 (ja) 荷電粒子線露光装置及び該装置を用いたデバイス製造方法
JP4804136B2 (ja) 荷電粒子線装置及びデバイス製造方法
JPH09330870A (ja) 電子ビーム露光装置及びその露光方法
JP2007329220A (ja) マルチビーム荷電粒子線装置及びマルチビーム荷電粒子線の制御方法およびデバイス製造方法
JP2013171959A (ja) 荷電粒子線描画装置、それを用いた物品の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140924

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140924

A762 Written abandonment of application

Free format text: JAPANESE INTERMEDIATE CODE: A762

Effective date: 20150710