JP2013062490A - Optical semiconductor device lead frame, optical semiconductor device lead frame with resin and optical semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an optical semiconductor device lead frame, an optical semiconductor device lead frame with a resin and an optical semiconductor device, which can prevent plastic deformation of a lead frame by inhibiting strength decrease even when forming a recess on a surface of the lead frame for improving adhesion with a resin.SOLUTION: Recesses are formed on a lead frame surface in regions adjacent to corners and flat regions are formed other than the regions adjacent to the corners, and a thickness of the lead frame in each flat region is kept thicker than a thickness of each region where the recess is formed.

Description

  The present invention relates to a lead frame for an optical semiconductor device on which an optical semiconductor element such as an LED is placed, a lead frame for an optical semiconductor device with resin, and an optical semiconductor device.

  2. Description of the Related Art Conventionally, lighting devices that use LED (light emitting diode) elements as light sources are used in various home appliances, OA equipment, display lights for vehicle equipment, general lighting, in-vehicle lighting, displays, and the like. Some of these lighting devices include an optical semiconductor device having a lead frame having a terminal portion insulated from each other and an LED element.

  As such an optical semiconductor device, for example, Patent Document 1 discloses a PLCC (Plastic leaded chip carrier) type optical semiconductor device. In Patent Document 1, a PLCC type optical semiconductor device has a structure that holds a lead frame and a dome-shaped capsule material that seals an LED element.

  Here, in general, a light-transmitting resin that transmits light emitted from the LED element is used as a material for sealing the LED element, and the outer periphery thereof is light-reflective in order to improve the light emission efficiency of the optical semiconductor device. Resin is formed.

JP 2007-49167 A

  In recent years, there has been a demand for further downsizing and thinning of optical semiconductor devices including LED elements. Therefore, a structure (so-called bottom mounting structure) in which the terminal portion of the surface (back surface) opposite to the surface (front surface) on which the LED element of the lead frame is placed is exposed as an external terminal from the resin and mounted on the external substrate. ) Optical semiconductor devices have been used. These semiconductor devices have been used.

  In such a small and thin optical semiconductor device, for example, the resin is formed only on the surface and side surfaces of the terminal portion and not on the back surface of the terminal portion, so that the contact area between the resin and the terminal portion is reduced. In order to prevent the detachment of the resin due to this, a fine concave portion is formed on the surface of the terminal portion to improve the adhesion.

  However, in the region where the concave portion as described above is formed, the thickness (thickness) of the terminal portion is reduced, so that the strength of the terminal portion is lowered and the lead frame may be deformed. .

  The present invention has been made in view of the above circumstances, and even when a recess for improving the adhesion to the resin is formed on the surface of the lead frame, the decrease in strength is suppressed and the lead frame is formed. An object of the present invention is to provide a lead frame for an optical semiconductor device, a lead frame for an optical semiconductor device with resin, and an optical semiconductor device capable of preventing plastic deformation.

  As a result of various researches, the present inventor has formed the concave portion as described above in a region near the corner portion on the surface of the lead frame, and formed a flat region other than the region near the corner portion. The present invention has been completed by finding that the above problem can be solved by keeping the thickness of the frame thicker than the thickness of the lead frame in the region where the recess is formed.

  That is, the present invention includes a plurality of terminal portions including an internal terminal located on the front surface side and an external terminal located on the back surface side in a lead frame for an optical semiconductor device used in a resin-encapsulated optical semiconductor device. In addition, each of the terminal portions has a plurality of corner portions on the surface side thereof, a recess is formed in a region near each corner portion, and a flat region is formed between the recesses. An optical semiconductor device lead frame.

  The present invention is the lead frame for an optical semiconductor device, wherein the concave portion is continuously formed up to the outer peripheral side surface of the lead frame for the optical semiconductor device.

  The present invention is the lead frame for an optical semiconductor device, wherein the corners of the recesses are formed in an arc shape in plan view.

  Further, the present invention provides the lead frame for an optical semiconductor device, wherein the concave portion has any one of a substantially polygonal shape, a substantially circular shape, a substantially sector shape, and a substantially ring shape in plan view. is there.

  Further, according to the present invention, the corner portion has a pair of side edges that intersect with each other, and the concave portion is formed in a curved belt shape that communicates with each side edge, leaving a flat region formed in the vicinity of the pair of side edges. The lead frame for an optical semiconductor device is characterized in that the width of the central portion of the recess is narrower than the width of the communication portion of each side edge of the recess.

  Further, the present invention is the lead frame for an optical semiconductor device, wherein all the regions other than the recesses in the surface of each terminal portion are flat regions.

  Further, the present invention provides an optical semiconductor device characterized in that, in plan view, the width of the inside of the recess is wider than the width of the opening of the recess, and the recess has a C-shaped cross section that opens upward. Lead frame for use.

  According to another aspect of the present invention, there is provided a lead frame for an optical semiconductor device with a resin, comprising: a lead frame for an optical semiconductor device; and a light reflective resin that reflects light emitted from the optical semiconductor element.

  The present invention is the lead frame for an optical semiconductor device, wherein the light reflecting resin is formed on at least a part of the recess.

  The present invention also provides a lead frame for an optical semiconductor device, an optical semiconductor element placed on the surface of the lead frame for an optical semiconductor device, and the light emitted from at least the optical semiconductor element by sealing the optical semiconductor element. And a translucent resin that transmits part of the optical semiconductor device.

  The present invention is also an optical semiconductor device characterized in that a light-reflective resin that reflects light emitted from the optical semiconductor element is provided so as to surround the light-transmitting resin in plan view.

  The present invention is the optical semiconductor device, wherein the translucent resin is formed on at least a part of the recess.

  Moreover, the present invention is the optical semiconductor device, wherein the light reflecting resin is formed on at least a part of the recess.

  According to the present invention, the recess that enhances the adhesion to the resin is formed only in the vicinity of the corner portion on the surface side of the lead frame for an optical semiconductor device, and in addition to the vicinity of the corner portion, the recess Since the flat region is formed without being formed, it is possible to keep the thickness of the flat region thicker than the thickness of the region where the concave portion is formed, and the optical semiconductor device lead frame and the resin are in close contact with each other. It is possible to prevent plastic deformation of the lead frame by suppressing the strength reduction due to the formation of the recess while improving the properties.

It is a top view which shows an example of the flat form of the lead frame for optical semiconductor devices which concerns on this invention. It is the elements on larger scale of the R area | region in FIG. It is explanatory drawing which shows an example of the form of the package area | region of the lead frame for optical semiconductor devices which concerns on this invention, (a) is a top view, (b) is AA sectional drawing of (a), (c) is ( It is BB sectional drawing of a). It is a figure explaining arrangement | positioning of the recessed part of the lead frame for optical semiconductor devices which concerns on this invention. It is a top view which shows the other example of the lead frame for optical semiconductor devices which concerns on this invention. It is sectional drawing which shows an example of the lead frame for optical semiconductor devices with a resin concerning this invention. It is sectional drawing which shows an example of the optical semiconductor device which concerns on this invention. It is a typical process figure showing an example of a manufacturing method of a lead frame for optical semiconductor devices concerning the present invention. It is a typical process drawing showing an example of a manufacturing method of an optical semiconductor device using a lead frame for optical semiconductor devices concerning the present invention. It is sectional drawing which shows the modification of the recessed part of the lead frame for optical semiconductor devices which concerns on this invention.

  Hereinafter, the lead frame for optical semiconductor devices, the lead frame for optical semiconductor devices with resin, and the optical semiconductor device of the present invention will be described in detail.

[Lead frame for optical semiconductor devices]
First, the lead frame for optical semiconductor devices of the present invention will be described. FIG. 1 is a plan view showing an example of a plate-like form of an optical semiconductor device lead frame according to the present invention, FIG. 2 is a partially enlarged view of an R region in FIG. 1, and FIG. It is explanatory drawing which shows an example of the form of the package area | region of the lead frame for optical semiconductor devices which concerns on this, (a) is a top view, (b) is AA sectional drawing of (a), (c) is (a). It is BB sectional drawing of.

  As shown in FIGS. 1 and 2, the lead frame for an optical semiconductor device according to the present invention is generally made of copper (Cu), a copper alloy, 42 alloy (Ni 40.5% to 43% Fe alloy), aluminum or the like. A flat metal substrate as a material is collectively processed and formed in a multifaceted form. And after passing through each process of formation of light-reflective resin, mounting of an optical semiconductor element, and formation of translucent resin, it is cut | disconnected (dicing) in a package unit, and becomes an individual optical semiconductor device.

  As shown in FIG. 3, the lead frame for an optical semiconductor device according to the present invention comprises, for example, one unit package (one unit of optical semiconductor device) with two terminal portions, and one terminal portion of the lead frame. In many cases, the optical semiconductor element is placed on the front side, but the optical semiconductor element may be placed across the two terminal portions. In addition to the terminal portion, there may be a die pad portion on which the optical semiconductor element is placed.

  Further, when one unit of optical semiconductor device is configured using a plurality of optical semiconductor elements, the lead frame for an optical semiconductor device also configures one unit package with a plurality of terminal portions corresponding to each optical semiconductor element. In some cases.

  In the example shown in FIG. 1, the lead frame for an optical semiconductor device according to the present invention is in a form of being multifaceted on a flat metal substrate, and has a frame body region 2 having a rectangular outer shape, and a frame body. A plurality of package regions 3 arranged in a matrix in the region 2 are provided. The plurality of package regions 3 are connected to each other via a connecting portion (not shown) provided in the dicing region 4.

  As shown in FIG. 2, the optical semiconductor device lead frame 10 in the package region 3 includes a terminal portion 11 and a terminal portion 12 adjacent to the terminal portion 11. Each package region 3 is a region corresponding to an individual optical semiconductor device.

  As shown in FIG. 2, the terminal portion 12 in each package region 3 is connected to a terminal portion 11 in another package region 3 adjacent to the right by a connecting portion 13a. Further, the terminal portions 11 in each package region 3 are connected to the terminal portions 11 in other package regions 3 adjacent to the upper and lower portions thereof by connecting portions 13b. Similarly, the terminal portion 12 in each package region 3 is connected to the terminal portion 12 in another package region 3 adjacent above and below by the connecting portion 13c. Here, each of the connecting portions 13 a, 13 b, and 13 c is located in the dicing region 4. In addition, the terminal part 11 and the terminal part 12 in the package area | region 3 located in the outermost periphery are connected with the frame body area | region 2 by one or more of connection part 13a, 13b, 13c. Each connection part 13a, 13b, 13c is thinned by the half etching from the back surface side.

  In addition, a gap (penetrating portion) is formed between the terminal portion 11 and the terminal portion 12 in the lead frame 10 for an optical semiconductor device in one package region 3, and the terminal after being cut (diced). The part 11 and the terminal part 12 are electrically insulated from each other.

  Next, the configuration of the lead frame for an optical semiconductor device according to the present invention in the package region 3 shown in FIG. 2 will be described in more detail with reference to FIG.

  The lead frame for an optical element according to the present invention has a plurality of terminal portions integrally having an internal terminal on the front surface side and an external terminal on the back surface side of the metal substrate, and each of them is electrically independent from each other. Then, the internal terminal of the terminal part and the terminal of the optical semiconductor element are electrically connected, and the whole is resin-sealed optical semiconductor device sealed with resin so that the back surface is exposed to the outside. A lead frame for an optical semiconductor device having a recess in a region near the corner portion on the surface side, and a flat region is formed in a region other than the region near the corner portion, and the thickness of the flat region is It is characterized by being thicker than the thickness of the region where the recess is formed.

  For example, as shown in FIG. 3A, an optical semiconductor device lead frame 10 according to the present invention includes two terminal portions 11 and 12, and is provided on the surface side of the optical semiconductor device lead frame 10. Concave portions 14 are formed in the corner regions 15a, 15b, 15c, and 15d to improve the adhesion to the resin. The recesses 14 are not formed on the surface of the optical element lead frame 10 other than the corner neighboring areas 15a, 15b, 15c, and 15d, which is a flat area.

  That is, each terminal part 11 and 12 has a pair of corner parts 11a and 12a in the surface side, respectively, and the recessed part 14 is formed in the area | region near each corner part 11a and 12a, respectively. Further, flat regions 11b and 12b are formed between the recesses 14 of the terminal portion 11 and between the recesses 14 of the terminal portion 12, respectively. Further, flat regions 11 c and 12 c are also formed between the concave portion 14 of the terminal portion 11 and the concave portion 14 of the terminal portion 12.

  Here, the vicinity region of the corner portion can be, for example, a region from each corner (corner) of the lead frame to each connecting portion located at the shortest position. For example, in FIG. 3A, in the drawing, in the vicinity region 15a of the corner portion shown at the upper left of the terminal portion 11, the horizontal direction (X direction) extends from the corner (corner) of the lead frame to the left end of the connecting portion 13b. The vertical direction (Y direction) can be a region from the corner (corner) of the lead frame to the upper end of the connecting portion 13a.

  In such a region, since the concave portion is not formed in the base region of the connecting portion, the thickness of the base portion of the connecting portion can be maintained, that is, the strength of the base portion of the connecting portion can be maintained. This is because plastic deformation of the lead frame for an optical semiconductor device due to cut stress when dicing the connecting portion can be prevented.

  For example, as shown in FIG. 3B, the thickness (thickness) of the terminal portions 11 and 12 in the region where the recess 14 is formed has a thickness corresponding to the depth of the recess 14. As shown in FIG. 3C, since the recess 14 is not formed in the cross section of the flat region of the terminal portions 11 and 12, the thickness (thickness) of the terminal portion is the recess 14. The thickness does not decrease by the amount corresponding to the depth of the. That is, the thickness of the terminal portions 11 and 12 in the flat region is thicker than the thickness of the terminal portions 11 and 12 in the region where the recess 14 is formed. In the example of FIG. 3C, the thickness of the flat region is equal to that of the metal substrate 21.

  Here, the groove-like recess 14 is formed to improve the adhesion between the optical semiconductor device lead frame 10 and the resin, and is, for example, 0.03 mm to 0.03 mm from the outer periphery of the optical semiconductor device lead frame 10. Formed inside with a distance of 0.8 mm. The opening width (width in the direction perpendicular to the longitudinal direction) of the groove-shaped recess 14 is, for example, 0.05 mm to 1 mm. The depth of the groove-like recess 14 depends on the size of the opening width, but is, for example, about 1/4 to 3/4 of the thickness of the metal substrate 21 constituting the lead frame 10 for an optical semiconductor device. Preferably, it is 1/2 to 3/4 of the thickness of the metal substrate 21, and is typically about 1/2 of the thickness of the metal substrate 21.

  As shown in FIGS. 3B and 3C, the optical semiconductor device lead frame 10 includes a metal substrate 21 and a plating layer 22 formed on the metal substrate 21. In the present invention, in order to reduce the size and thickness of the optical semiconductor device, the terminals 11 and 12 constituting the optical semiconductor device lead frame 10 are electrically connected to the optical semiconductor element on the surfaces 11A and 12A side. Functions as an internal terminal (inner lead) connected to, and the back surface 11B, 12B side functions as an external terminal (outer lead) electrically connected to the external substrate.

  In this example, since the terminal portion 11 also functions as a die pad on which the optical semiconductor element is placed, the terminal portion 11 has a larger area than the adjacent terminal portion 12.

  Examples of the material of the metal substrate 21 include copper, copper alloy, 42 alloy (Ni 40.5% to 43% Fe alloy), aluminum, and the like. The thickness of the metal substrate 21 is preferably 0.05 mm to 0.5 mm, for example.

  The plating layer 22 is provided on the front and back surfaces of the metal substrate 21 constituting the terminal portions 11 and 12, and the front-side plating layer 22 functions as a reflection layer for reflecting light from the optical semiconductor element. . On the other hand, the plating layer 22 on the back side plays a role of increasing wettability with the solder when mounted on the external substrate. In the example shown in FIG. 3B, the plating layer 22 is provided on the entire front and back surfaces of the metal substrate 21 together with the terminal portion 11 and the terminal portion 12, but in the present invention, the plating layer 22 is provided. May be formed only on a desired portion of the front surface or the back surface of the terminal portions 11 and 12. For example, in order to improve the adhesion between the inner wall of the recess and the resin, the plating layer may not be formed inside the recess.

  The plating layer 22 is made of, for example, an electrolytic plating layer of silver (Ag), and has a thickness in the range of 0.02 μm to 12 μm, for example.

  In addition, the cross-sectional shape of the recessed part 14 is not limited, For example, you may consist of a structure shown in FIG. In FIG. 10, the recess 14 has a C-shaped cross section that opens upward. Further, the recess 14 has a substantially circular cross section inside, and has an opening on the upper side, and the edge 23 of the opening has an overhang shape protruding to the inside from the inside. The maximum width W2 inside the recess 14 is larger than the opening width W1 of the recess 14.

  The above-described form can be formed, for example, by controlling the spray pressure of the etching solution when the metal substrate 21 is etched. For example, the value of W1 is in the range of about 0.05 mm to 1 mm. W2 can be about 0.02 mm to 0.2 mm larger than W1.

  Since the recess 14 shown in FIG. 10 has the above-described configuration, even if a peeling force in the vertical direction (Z direction) is applied to the resin integrally formed inside the recess and on the opening, Since the width of the opening of the recess is narrower than the maximum width inside, the edge of the opening acts as an anchor, making it difficult for the resin to be detached from the lead frame for an optical semiconductor device. Therefore, detachment of the resin from the lead frame for optical semiconductor devices can be more effectively prevented.

  Next, the arrangement of the recesses of the lead frame for optical semiconductor devices according to the present invention and the effects thereof will be described in more detail.

  FIG. 4 is a view for explaining the arrangement of the recesses of the lead frame for an optical semiconductor device according to the present invention. For example, as shown in FIG. 4, in the lead frame 10 for an optical semiconductor device according to the present invention, the concave portion 14 is formed only in the vicinity region 15 of the corner portion of the surface of the terminal portions 11 and 12. This area is a flat area. Further, at least one connecting portion 13 is formed on each surface of the lead terminal outer periphery of the rectangular terminal portion. On the other hand, in a conventional optical element lead frame in which a groove-shaped recess is formed along the outer periphery of the lead frame, the recess is also formed in other regions near the corner.

  In the conventional lead frame for an optical semiconductor device, the thickness (thickness) of the lead frame in the region where the groove-shaped recess is formed corresponds to the depth of the groove-shaped recess compared to the flat region. Although the thickness is reduced by the size, in the lead frame 10 for an optical semiconductor device according to the present invention, the thickness (thickness) of the lead frame in the region 16 is the same as the flat region, and the recess 14 This is thicker than the thickness of the region where the is formed.

  Therefore, the lead frame for an optical semiconductor device according to the present invention can prevent plastic deformation of the lead frame by suppressing the strength reduction due to the formation of the recess compared to the conventional one. In addition, since the position where the release force is most concentrated in the close contact with the resin is the corner portion of the lead frame, the lead frame for optical semiconductor devices according to the present invention having the recess in the region near the corner portion is formed with the recess. It is also possible to efficiently maintain the adhesive force with the resin while suppressing a decrease in the adhesiveness due to the decrease in the region.

  Next, another embodiment of the lead frame for an optical semiconductor device according to the present invention will be described. FIG. 5 is a plan view showing another example of the lead frame for an optical semiconductor device according to the present invention.

  In the lead frame for an optical semiconductor device according to the present invention, the recess may be continuously formed up to the outer peripheral side surface of the lead frame for the optical semiconductor device. For example, as shown in FIG. 5A, in a plan view, the substantially L-shaped recess 14a may be continuously formed up to the outer peripheral side surfaces 17a and 17b of the lead frame 10 for optical semiconductor devices. . With such a configuration, it becomes possible to inject the resin from the side surfaces 17a and 17b into the recess 14a, and it is possible to more easily fill the recess 14a with the resin. In particular, as compared with the conventional lead frame for an optical element in which a groove-shaped recess is formed along the outer periphery of the lead frame, the resin can be easily filled into the recess 14a.

  Moreover, in the lead frame for optical semiconductor devices according to the present invention, the corners of the recesses may be formed in an arc shape in plan view. For example, as shown in FIG. 5B, the corners of the recess 14b may be formed in an arc shape in plan view. In addition, the recessed part 14b shown in FIG.5 (b) makes the corner | angular part of the substantially L-shaped recessed part 14a shown to Fig.5 (a) circular arc shape. With such a configuration, the corner portion is formed with a smooth curved surface, and therefore, when forming a light-reflecting resin or a light-transmitting resin, which will be described later, to the recess 14b without hindering the flow of each resin. The resin can be easily filled.

  In the lead frame for an optical semiconductor device according to the present invention, the shape of the recess is not limited to the substantially L-shape as described above, but various various polygons, substantially circles, substantially fan shapes, or substantially rings. It may have any shape. The various shapes may be continuously formed up to the outer peripheral side surfaces 17a and 17b of the optical semiconductor device lead frame 10 in plan view. For example, as shown in FIG. 5C, the recess 14c has a substantially fan-shaped outer shape in plan view, and has a substantially circular flat region 18 inside the substantially sector-shaped region. Such a shape may be used. The thickness of the flat region 18 is the same as the thickness of the flat region of the optical semiconductor device lead frame 10 (that is, the thickness of the metal substrate 21 described above). With such a configuration, the corner portion is formed with a smooth curved surface, and therefore, when forming a light-reflecting resin or a light-transmitting resin, which will be described later, the flow into each recess 14c is not hindered. The resin can be easily filled. Further, the corners of the lead frame are concave portions, and the flat area is formed in the concave portion inside from the outer periphery of the lead frame.

  Alternatively, as shown in FIG. 5D, the corner portion has a pair of side edges 19a and 19b that intersect with each other, and the concave portion 14d leaves a flat region 18 formed in the vicinity of the pair of side edges 19a and 19b. It may be formed in a curved belt shape communicating with each side edge 19a, 19b. Note that the thickness of the flat region 18 is the same as the thickness of the flat region of the optical semiconductor device lead frame 10 (that is, the thickness of the metal substrate 21 described above).

In FIG. 5 (d), the width of the recess 14d, each side edge 19a of the recess 14d, the central portion of the concave portion 14d from communicating portion 14d _2, d ₂ and 19b (the narrowest part) 14d gradually narrows toward the ₁ It has become. Accordingly, the width of the central portion 14d ₁ of the recess 14d is narrower than the width of the communication portions 14d ₂ and d ₂ of the recess 14d. In this case, since the communication portions 14d ₂ and d _{2 serving} as inlets for the resin to be filled (the light reflecting resin 31 or the translucent resin 44) are wide, the resin can be easily filled in the recess 14d. Further, since the flat area 18 is provided at each corner portion, there is no possibility that the strength of the lead frame at each corner portion is lowered.

  Although not shown, in the lead frame for an optical semiconductor device according to the present invention, the number of the concave portions is not particularly limited, and a plurality of the concave portions may be formed in the vicinity of each corner portion. For example, the concave portion formed on the outer peripheral side and the concave portion formed on the inner peripheral side may contribute to adhesion with different resins.

[Lead frames for optical semiconductor devices with resin]
Next, the lead frame for an optical semiconductor device with resin according to the present invention will be described. FIG. 6 is a cross-sectional view showing an example of a lead frame for an optical semiconductor device with a resin according to the present invention. A lead frame for an optical semiconductor device with a resin according to the present invention includes the above-described lead frame for an optical semiconductor device according to the present invention and a light-reflecting resin that reflects light emitted from the optical semiconductor element.

  The above-described light-reflective resin is made of, for example, a thermoplastic resin or a thermosetting resin, and is formed on the surface and side surfaces of the lead frame for an optical semiconductor device around the portion where the optical semiconductor element is placed. . As a method for forming the above-described light-reflective resin, for example, a method of inserting a lead frame into a resin mold and injecting the resin, such as injection molding or transfer molding, or screen printing a resin on the lead frame Can be used. Here, as described above, the terminal portion 11 and the terminal portion 12 according to the present invention function as internal terminals (inner leads) electrically connected to the optical semiconductor element on the front surface side, and on the back surface side as the external terminal. It functions as an external terminal (outer lead) electrically connected to the substrate. Therefore, in the lead frame 30 for an optical semiconductor device with a resin according to the present invention, as shown in FIG. 6, the light reflecting resin 31 is not formed on the back surfaces of the terminal portion 11 and the terminal portion 12. The back surfaces of the terminal portions 11 and 12 are exposed.

  In addition, it is preferable that the light-reflective resin 31 is formed in the gap (through portion) formed between the terminal portion 11 and the terminal portion 12. The terminal portion 11 and the terminal portion 12 can be electrically insulated, and the light reaching the gap (penetrating portion) can be reflected with a high reflectance, thereby improving the light emission efficiency of the optical semiconductor device. Because it can.

  About the thermoplastic resin and thermosetting resin used for the above-mentioned light-reflective resin, it is particularly desirable to select a resin having excellent heat resistance, light resistance and mechanical strength. For example, as the thermoplastic resin, polyamide, polyphthalamide, polyphenylene sulfide, liquid crystal polymer, polyether sulfone, polybutylene terephthalate, or the like can be used. As the thermosetting resin, silicone, epoxy, polyetherimide, polyurethane, polybutylene acrylate, or the like can be used. Furthermore, it is also possible to increase the light reflectance by adding any of titanium dioxide, zirconium dioxide, potassium titanate, aluminum nitride and boron nitride as a light reflecting agent in these resins. .

  In the present invention, the light reflective resin is preferably formed on at least a part of the groove-shaped recess. For example, as shown in FIG. 6A, the light reflective resin 31 may be formed on the recess 14 provided in the terminal portions 11 and 12. By setting it as such a structure, the adhesiveness of the light reflection resin 31 and the terminal parts 11 and 12 which comprise the lead frame for optical semiconductor devices can be improved.

  In the present invention, for example, as shown in FIG. 6B, the light reflective resin 31 may be formed on the outer peripheral side of the recess 14. If it is such a structure, the translucent resin which seals an optical semiconductor element will be formed in the area | region enclosed by the light-reflective resin using the above lead frames for optical semiconductor devices with a resin. In this case, the adhesion between the translucent resin and the optical element lead frame can be improved.

  In the lead frame for an optical semiconductor device, the light reflective resin 31 is formed intensively around the vicinity of the corner portion. In this case, for example, when heat is applied to the lead frame for an optical semiconductor device during manufacturing, a difference in thermal expansion occurs between the lead frame 10 for the optical semiconductor device and the light reflective resin 31, and in particular, the light reflective resin 31. A difference in thermal expansion is likely to occur in the vicinity of the area near the corner portion where the amount of is large. On the other hand, in the present invention, since the recesses 14 are formed in the vicinity of each corner portion, the thermal expansion difference around the corner portion where the amount of the light reflecting resin 31 is particularly large is absorbed. Can do. As a result, it is possible to prevent peeling between the optical semiconductor device lead frame 10 and the light reflective resin 31.

  Although not shown, in the present invention, using the optical semiconductor device lead frame having a plurality of recesses in the vicinity of the corner portion, for example, a light-reflective resin on the recesses on the outer peripheral side, A translucent resin may be formed on each of the recesses on the inner peripheral side. This is because by adopting such a configuration, it is possible to improve the adhesion between both the light-reflective resin and the light-transmitting resin and the lead frame for optical semiconductor devices.

[Optical semiconductor device]
Next, an optical semiconductor device according to the present invention will be described. FIG. 7 is a sectional view showing an example of an optical semiconductor device according to the present invention. An optical semiconductor device according to the present invention includes an optical semiconductor device lead frame according to the present invention, an optical semiconductor element mounted on a surface of the optical semiconductor device lead frame, and the optical semiconductor element sealed. And a translucent resin that transmits at least part of the light emitted from the optical semiconductor element. In the optical semiconductor device according to the present invention, the above-described light-reflecting resin may be provided so as to surround the light-transmitting resin in plan view. For example, in the example shown in FIG. 7A, the optical semiconductor device 40 according to the present invention includes an optical semiconductor element 42 placed on the surface of the terminal portion 11 of the lead frame for an optical semiconductor device according to the present invention and a light transmission. A light-reflective resin 31 is provided so as to surround the translucent resin 44.

  As the above-described optical semiconductor element, for example, a conventionally used LED element can be used. Here, in the LED element, for example, by appropriately selecting a material made of a compound semiconductor single crystal such as GaP, GaAs, GaAlAs, GaAsP, and AlInGaP or various GaN-based compound semiconductor single crystals such as InGaN as the light emitting layer, An emission wavelength ranging from ultraviolet light to infrared light can be selected.

  As a mounting form of the optical semiconductor element, for example, as shown in FIGS. 7A and 7B, one of the two terminal portions 11 and 12 is used as a die pad. As shown in (c), there is a form that straddles the two terminal portions 11 and 12. Although not shown, there is also a form in which the optical semiconductor element is placed on a die pad part different from the terminal part.

  Further, for example, as shown in FIGS. 7A and 7B, the optical element 42 is fixedly mounted on the terminal portion 11 with a heat-dissipating adhesive 41 such as solder, and the bonding wire 43 causes the terminal portion 11 and Connected to the terminal portion 12.

  Here, when a die bonding paste is used instead of the solder 41, it is possible to select a die bonding paste made of a light-resistant epoxy resin or silicone resin.

  The bonding wire 43 is made of a material having good conductivity such as gold (Au), for example, and has one end connected to the optical semiconductor element 42 and the other end connected to the terminal portions 11 and 12. For connection between the optical semiconductor element and the terminal portion, for example, as shown in FIG. 7C, instead of the bonding wire, a heat dissipating adhesive 41a having conductivity such as gold-gold bonding or soldering is used. , 41b, there is also a method of connecting to each terminal portion 11, 12. Further, the terminal of the optical semiconductor element is used for an optical semiconductor device by using ACF (anisotropic conductive film), ACP (anisotropic conductive paste), NCF (nonconductive film), NCP (nonconductive paste), or the like. There is also a method of directly joining the terminal portion of the lead frame.

  Next, the translucent resin will be described. As the translucent resin according to the present invention, it is desirable to select a material having a high light transmittance and a high refractive index at the emission wavelength of the optical semiconductor element in order to improve the light extraction efficiency. For example, an epoxy resin or a silicone resin can be selected as a resin that satisfies the characteristics of high heat resistance, light resistance, and high mechanical strength. In particular, when a high-brightness LED is used as the optical semiconductor element, the translucent resin is exposed to strong light. Therefore, the translucent resin is preferably made of a silicone resin having high light resistance.

  Since the light-reflective resin has already been described in the above-described lead frame for an optical semiconductor device with a resin according to the present invention, detailed description thereof is omitted here.

  In the optical semiconductor device of the present invention, it is preferable that the translucent resin is formed on at least a part of the groove-shaped recess. For example, as shown in FIG. 7A, the translucent resin 44 is formed on the groove-like recess 14 provided in the terminal portion 11 and the groove-like recess 14 provided in the terminal portion 12. It may be. This is because, with such a configuration, in the optical semiconductor device according to the present invention, the adhesion between the translucent resin and the optical semiconductor device lead frame can be enhanced.

  In the optical semiconductor device of the present invention, it is preferable that the light reflecting resin is formed on at least a part of the groove-shaped recess. For example, as shown in FIG. 7B, the light-reflective resin 31 is formed on the groove-like recess 14 provided in the terminal portion 11 and the groove-like recess 14 provided in the terminal portion 12. It may be. This is because, with such a configuration, in the optical semiconductor device according to the present invention, the adhesion between the light-reflecting resin and the optical semiconductor device lead frame can be improved.

  Although not shown, in the present invention, using the optical semiconductor device lead frame having a plurality of recesses in the vicinity of the corner portion, for example, a light-reflective resin on the recesses on the outer peripheral side, A translucent resin may be formed on each of the recesses on the inner peripheral side. This is because by adopting such a configuration, it is possible to improve the adhesion between both the light-reflective resin and the light-transmitting resin and the lead frame for optical semiconductor devices.

[Method for manufacturing lead frame for optical semiconductor device]
Next, a method for manufacturing a lead frame for optical semiconductor devices according to the present invention will be described. FIG. 8 is a schematic process diagram showing an example of a method for manufacturing an optical semiconductor device lead frame according to the present invention.

  First, as shown in FIG. 8A, a flat metal substrate 21 is prepared. As the metal substrate 21, a metal substrate made of copper, copper alloy, 42 alloy (Ni 40.5% to 43% Fe alloy) or the like can be used as described above. In addition, it is preferable to use what the metal substrate 21 performed the degreasing | defatting etc. on both surfaces, and performed the washing process.

  Next, resist patterns 51a and 51b are formed on the front and back surfaces of the metal substrate 21, respectively (FIG. 8B). Conventionally known resists for etching can be used as the resist patterns 51a and 51b and the forming method thereof.

  Next, the metal substrate 21 is etched using the resist patterns 51a and 51b as etching resistant films (FIG. 8C), and then the resist patterns 51a and 51b are removed (FIG. 8D). The etching solution used for the above-described etching can be appropriately selected according to the material of the metal substrate 21 to be used. For example, when copper is used as the metal substrate 21, a ferric chloride aqueous solution is usually used and the metal substrate is used. It can carry out by spray etching from both sides of 21.

  By this etching process, the outer shape of the terminal portion 11 and the terminal portion 12, the opening 61 that insulates the terminal portion 11 and the terminal portion 12, and the concave portion 14 are formed at the same time. Although omitted in FIG. 8, the terminal portion 11 and the terminal portion 12 in this process stage are multifaceted via the connecting portions 13 a, 13 b, and 13 c, for example, as shown in FIG. 2 described above. It has a form.

  Next, the plating layer 22 is formed on the entire surface of the metal substrate 21 constituting the terminal portion 11 and the terminal portion 12 by performing, for example, electrolytic plating using a silver plating solution mainly composed of silver cyanide, The lead frame 1 for optical semiconductor devices according to the present invention can be obtained (FIG. 8E). In addition, before forming the plating layer 22, for example, an electrolytic degreasing process, a pickling process, and a copper strike process may be appropriately selected, and then the plating layer 22 may be formed through an electrolytic plating process.

  8A to 8E show a method of manufacturing the optical semiconductor device lead frame 1 by etching. However, in the present invention, a manufacturing method using a press may be used.

[Method for manufacturing lead frame for optical semiconductor device with resin and method for manufacturing optical semiconductor device]
Next, a method for manufacturing a lead frame for an optical semiconductor device with a resin and a method for manufacturing an optical semiconductor device according to the present invention will be described. FIG. 9 is a schematic process diagram illustrating an example of a method of manufacturing an optical semiconductor device using the lead frame for an optical semiconductor device according to the present invention.

  First, as shown in FIG. 9A, by forming a light-reflecting resin 31 on the surface and side surfaces of the lead frame for an optical semiconductor device according to the present invention obtained by the above-described steps, the present invention is achieved. Such a resin-coated optical semiconductor device lead frame 30 is obtained. The light reflective resin 31 can be formed, for example, by injection molding or transfer molding of a thermoplastic resin using a mold processed into a desired shape, whereby a lead frame for an optical semiconductor device is formed. And the light reflecting resin 31 are integrally coupled.

  Next, as shown in FIG. 9B, the optical semiconductor element 42 is placed on the terminal portion 11 via a heat-dissipating adhesive 41 such as solder, and the optical semiconductor element 42 and the terminal are connected by bonding wires 43. The part 11 and the terminal part 12 are electrically connected.

  Next, as shown in FIG. 9C, the surface of the terminal portion 11 and the terminal portion 12 in the region surrounded by the light-reflecting resin 31 is filled with a light-transmitting resin 44 and light is transmitted by the light-transmitting resin 44. The semiconductor element 42 is sealed.

  Next, using a conventional method or the like, the light reflecting resin 31 and the connecting portions 13a, 13b, and 13c (not shown) in the dicing region 4 are cut (FIG. 9 (d)), and according to the present invention. An optical semiconductor device 40 is obtained (FIG. 9E).

  The lead frame for an optical semiconductor device, the lead frame for an optical semiconductor device with resin, and the optical semiconductor device according to the present invention have been described above, but the present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the technical idea described in the claims of the present invention has substantially the same configuration and exhibits the same function and effect regardless of the case. It is included in the technical scope of the invention.

DESCRIPTION OF SYMBOLS 1 ... Lead frame for optical semiconductor devices 2 ... Frame region 3 ... Package region 4 ... Dicing region 10 ... Lead frame for optical semiconductor devices 11, 12 ... Terminal portions 13a, 13b , 13c ... connecting part 14, 14a, 14b, 14c ... recessed part 15a, 15b, 15c, 15d ... area near corner part 16 ... area 17a, 17b ... side 18 ... area DESCRIPTION OF SYMBOLS 21 ... Metal substrate 22 ... Plating layer 30 ... Lead frame for optical semiconductor devices with resin 31 ... Light reflective resin 40 ... Optical semiconductor devices 41, 41a, 41b ... Heat radiation adhesion Agent 42 ... Optical semiconductor element 43 ... Bonding wire 44 ... Translucent resin 51a, 51b ... Resist pattern 61 ... Penetrating part 100 ... Optical semiconductor device De frame

Claims (13)

In a lead frame for an optical semiconductor device used for a resin-encapsulated optical semiconductor device,
A plurality of terminal portions including an internal terminal located on the front surface side and an external terminal located on the back surface side,
Each of the terminal portions has a plurality of corner portions on the surface side,
Recesses are formed in the vicinity of each corner portion,
A lead frame for an optical semiconductor device, wherein a flat region is formed between the recesses.   2. The lead frame for an optical semiconductor device according to claim 1, wherein the concave portion is continuously formed up to an outer peripheral side surface of the lead frame for the optical semiconductor device.   3. The lead frame for an optical semiconductor device according to claim 1, wherein a corner portion of the recess is formed in an arc shape in a plan view.   The said recessed part has a shape in any one of a substantially polygon, a substantially circular shape, a substantially sector shape, or a substantially ring shape in planar view. Lead frame for optical semiconductor devices.   The corner portion has a pair of side edges that intersect each other, and the recess is formed in a curved band shape that communicates with each side edge, leaving a flat region formed in the vicinity of the pair of side edges, and the center of the recess The lead frame for an optical semiconductor device according to any one of claims 1 to 3, wherein a width of the portion is narrower than a width of a communication portion of each side edge of the recess.   6. The lead frame for an optical semiconductor device according to claim 1, wherein a region other than the concave portion of the surface of each terminal portion is a flat region.   The width of the inside of the recess is wider than the width of the opening of the recess in plan view, and the recess has a C-shaped cross section that opens upward. Item 2. A lead frame for an optical semiconductor device according to the item.   8. A resin-coated optical semiconductor device comprising: the optical semiconductor device lead frame according to claim 1; and a light reflective resin that reflects light emitted from the optical semiconductor element. Lead frame.   9. The lead frame for an optical semiconductor device with a resin according to claim 8, wherein the light-reflecting resin is formed on at least a part of the recess.   An optical semiconductor device lead frame according to any one of claims 1 to 7, an optical semiconductor element mounted on a surface of the optical semiconductor device lead frame, and the optical semiconductor element are sealed, An optical semiconductor device comprising: a translucent resin that transmits part of light emitted from the optical semiconductor element.   11. The optical semiconductor device according to claim 10, wherein a light-reflecting resin that reflects light emitted from the optical semiconductor element is provided so as to surround the light-transmitting resin in a plan view.   The optical semiconductor device according to claim 10, wherein the translucent resin is formed on at least a part of the recess.   The optical semiconductor device according to any one of claims 11 to 12, wherein the light-reflecting resin is formed on at least a part of the concave portion.

Images