JP2013055109A - Substrate with built-in component and method for manufacturing the same - Google Patents

Substrate with built-in component and method for manufacturing the same Download PDF

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JP2013055109A
JP2013055109A JP2011190527A JP2011190527A JP2013055109A JP 2013055109 A JP2013055109 A JP 2013055109A JP 2011190527 A JP2011190527 A JP 2011190527A JP 2011190527 A JP2011190527 A JP 2011190527A JP 2013055109 A JP2013055109 A JP 2013055109A
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frame
insulating layer
substrate
opening
conductive layer
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JP5189672B2 (en
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Nobunori Sano
宜紀 佐野
Masahiro Okamoto
誠裕 岡本
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Fujikura Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide a substrate with a built-in component, in which an opening for incorporating an electronic component therein can be made small.SOLUTION: A substrate with a built-in component 10 includes: a first substrate 3A in which a first conductive layer 4c1 is formed on a first insulating layer 3c and an interlayer conduction part 1c2 is formed in the first insulating layer 3c; an electronic component 2 connected to the interlayer conduction part 1c2; and a second substrate 2A in which a second conductive layer 4b1 is formed on a second insulating layer 3b and which has an opening 6 at a position where the electronic component 2 is to be incorporated. The second conductive layer 4b1 includes a frame-shaped part 7b1 having a frame shape in a plan view. The opening 6 is formed to penetrate the second insulating layer 3b in the thickness direction in an entire inner region 8b1 of the frame-shaped part 7b1.

Description

本発明は、電子部品を内蔵した部品内蔵基板およびその製造方法に関する。   The present invention relates to a component-embedded substrate that incorporates an electronic component and a method for manufacturing the same.

電子機器の小型化、高機能化に伴って、機器に組み込まれる電子部品も小型化が進み、電子部品を実装するプリント配線板においても、高密度化、多層化、高速伝送特性の向上が求められている。これらの要求に応えるための技術として、EWLP(Embedded Wafer Level Package)というパッケージ技術がある。
EWLPは、WLCSP(Wafer Level Chip Size Package)などの半導体構成体(電子部品)をプリント配線板に内蔵する技術である。EWLPによれば、実装密度を向上させることができ、半導体素子間の配線長が短縮され、高速伝送特性の向上が可能である。
As electronic devices become smaller and more functional, electronic components built into the devices are also becoming smaller, and printed wiring boards on which electronic components are mounted are also required to have higher density, multiple layers, and improved high-speed transmission characteristics. It has been. As a technique for meeting these requirements, there is a package technique called EWLP (Embedded Wafer Level Package).
EWLP is a technology in which a semiconductor structure (electronic component) such as WLCSP (Wafer Level Chip Size Package) is built in a printed wiring board. According to EWLP, the mounting density can be improved, the wiring length between semiconductor elements can be shortened, and the high-speed transmission characteristics can be improved.

部品内蔵基板としては、電子部品を内蔵する両面配線板の両面側に、それぞれ片面配線板を積層したものがある(特許文献1を参照)。
図13は、部品内蔵基板の一例であり、この部品内蔵基板100は、絶縁樹脂層3の両面に導電層4が形成された両面配線板A102の一方および他方の面に、絶縁樹脂層3の外面側に導電層4が形成された片面配線板A101、A103を積層したものである。両面配線板A102は、絶縁樹脂層3に形成された開口部6に電子部品2を内蔵している。配線板A101〜A103は、接着層5を介して互いに接着され、層間導通部1によって互いに電気的に接続されている。
As a component-embedded substrate, there is a substrate in which single-sided wiring boards are laminated on both sides of a double-sided wiring board containing electronic components (see Patent Document 1).
FIG. 13 shows an example of a component-embedded substrate. The component-embedded substrate 100 includes an insulating resin layer 3 on one side and the other surface of a double-sided wiring board A102 in which a conductive layer 4 is formed on both sides of the insulating resin layer 3. Single-sided wiring boards A101 and A103 having a conductive layer 4 formed on the outer surface side are laminated. The double-sided wiring board A102 has the electronic component 2 built in the opening 6 formed in the insulating resin layer 3. The wiring boards A101 to A103 are bonded to each other through the adhesive layer 5, and are electrically connected to each other by the interlayer conductive portion 1.

図14および図15は、両面配線板A102の絶縁樹脂層3に開口部6を形成する工程を示すもので、この図に示すように、開口部6は、例えば個片化前の複数の両面配線板A102の絶縁樹脂層3に、レーザ加工やドリル加工などにより形成する。
図16は、開口部6を形成する工程における両面配線板A102の絶縁樹脂層3の平面図であり、図16(A)に2点鎖線示す領域6aをレーザ加工やドリル加工などにより除去することによって、図16(B)に示す開口部6を形成することができる。
FIG. 14 and FIG. 15 show the process of forming the opening 6 in the insulating resin layer 3 of the double-sided wiring board A102. As shown in this figure, the opening 6 has, for example, a plurality of both surfaces before singulation. The insulating resin layer 3 of the wiring board A102 is formed by laser processing or drilling.
FIG. 16 is a plan view of the insulating resin layer 3 of the double-sided wiring board A102 in the step of forming the opening 6. The region 6a indicated by the two-dot chain line in FIG. 16A is removed by laser processing, drilling, or the like. Thus, the opening 6 shown in FIG. 16B can be formed.

特開2008−270362号公報JP 2008-270362 A

しかしながら、上記部品内蔵基板では、開口部6の形成位置にずれが生じて電子部品2の内蔵に支障が生じるおそれがあるため、前記ずれを考慮して開口部6を大きく形成する必要があり、部品内蔵基板の小型化を図るうえで改善が要望されていた。
本発明は、前記事情に鑑みてなされたもので、電子部品を内蔵するための開口部を小さくできる部品内蔵基板およびその製造方法を提供することを目的とする。
However, in the component-embedded substrate, there is a possibility that the position where the opening 6 is formed is displaced, which may hinder the incorporation of the electronic component 2. Therefore, the opening 6 needs to be formed in a large size in consideration of the displacement. Improvements have been demanded in order to reduce the size of the component-embedded substrate.
The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a component-embedded substrate that can reduce the opening for incorporating an electronic component and a method for manufacturing the same.

本発明は、第1絶縁層の一方の面に第1導電層が形成され、前記第1絶縁層を貫通し前記第1導電層から他方の面に至る層間導通部を有する第1の基板と、前記層間導通部と接続される電子部品と、第2絶縁層に第2導電層が形成され、前記第2絶縁層の前記電子部品を内蔵する位置に開口部が形成された第2の基板と、を少なくとも備えた部品内蔵基板であって、前記第2導電層が、平面視枠状の枠状部を有し、前記開口部は、前記枠状部の内側領域全域の前記第2絶縁層を厚さ方向に貫通して形成されている部品内蔵基板を提供する。
前記枠状部は、前記第2絶縁層の両面にそれぞれ形成され、そのうち一方の面側の前記枠状部は、反対面側の前記枠状部に比べて内側領域の面積が大きく、かつ前記一方の面側の内側領域が平面視において前記反対面側の内側領域を包含することが好ましい。
The present invention includes a first substrate having a first conductive layer formed on one surface of the first insulating layer, and having an interlayer conductive portion penetrating the first insulating layer and extending from the first conductive layer to the other surface. An electronic component connected to the interlayer conductive portion; a second substrate in which a second conductive layer is formed in a second insulating layer; and an opening is formed in the second insulating layer at a position in which the electronic component is embedded. And the second conductive layer has a frame-like portion having a frame shape in plan view, and the opening is the second insulation in the entire inner region of the frame-like portion. Provided is a component-embedded substrate formed by penetrating layers in a thickness direction.
The frame-shaped portion is formed on both surfaces of the second insulating layer, respectively, and the frame-shaped portion on one surface side has a larger area of the inner region than the frame-shaped portion on the opposite surface side, and It is preferable that the inner region on one surface side includes the inner region on the opposite surface side in plan view.

本発明は、第1絶縁層の一方の面に第1導電層が形成され、前記第1絶縁層を貫通し前記第1導電層から他方の面に至る層間導通部を有する第1の基板と、前記層間導通部と接続される電子部品と、第2絶縁層に第2導電層が形成され、前記第2絶縁層の前記電子部品を内蔵する位置に開口部が形成された第2の基板と、を少なくとも備えた部品内蔵基板の製造方法であって、前記第2絶縁層に、前記第2導電層からなる平面視枠状の枠状部を形成し、前記枠状部の内側に位置する前記第2絶縁層にレーザ光を照射することにより、レーザ加工によって前記第2絶縁層を厚さ方向に貫通して前記開口部を形成する工程を含み、前記枠状部の内側の前記第2絶縁層にレーザ光を照射して前記開口部を形成するにあたって、前記レーザ光を、少なくとも前記枠状部の内周縁を含む領域に照射する部品内蔵基板の製造方法を提供する。
本発明は、第1絶縁層の一方の面に第1導電層が形成され、前記第1絶縁層を貫通し前記第1導電層から他方の面に至る層間導通部を有する第1の基板と、前記層間導通部と接続される電子部品と、第2絶縁層に第2導電層が形成され、前記第2絶縁層の前記電子部品を内蔵する位置に開口部が形成された第2の基板と、を少なくとも備えた部品内蔵基板の製造方法であって、前記第2絶縁層に、前記第2導電層からなる平面視枠状の枠状部を形成し、前記枠状部の内側に位置する前記第2絶縁層を、ウェットエッチングにより厚さ方向に貫通して前記開口部を形成する工程を含む部品内蔵基板の製造方法を提供する。
The present invention includes a first substrate having a first conductive layer formed on one surface of the first insulating layer, and having an interlayer conductive portion penetrating the first insulating layer and extending from the first conductive layer to the other surface. An electronic component connected to the interlayer conductive portion; a second substrate in which a second conductive layer is formed in a second insulating layer; and an opening is formed in the second insulating layer at a position in which the electronic component is embedded. And a manufacturing method of a component-embedded substrate comprising at least a frame-like frame-shaped portion made of the second conductive layer formed in the second insulating layer and positioned inside the frame-shaped portion. Irradiating the second insulating layer with laser light to form the opening through the second insulating layer in the thickness direction by laser processing, and the inner side of the frame-shaped portion. When forming the opening by irradiating the insulating layer with laser light, the laser light Both provide a method for manufacturing a component-embedded substrate for irradiating a region including the inner periphery of the frame-like portion.
The present invention includes a first substrate having a first conductive layer formed on one surface of the first insulating layer, and having an interlayer conductive portion penetrating the first insulating layer and extending from the first conductive layer to the other surface. An electronic component connected to the interlayer conductive portion; a second substrate in which a second conductive layer is formed in a second insulating layer; and an opening is formed in the second insulating layer at a position in which the electronic component is embedded. And a manufacturing method of a component-embedded substrate comprising at least a frame-like frame-shaped portion made of the second conductive layer formed in the second insulating layer and positioned inside the frame-shaped portion. There is provided a method of manufacturing a component-embedded substrate including a step of penetrating the second insulating layer in the thickness direction by wet etching to form the opening.

本発明によれば、開口部が、第2導電層からなる枠状部の内側領域に形成されているので、第2導電層(導電回路)に対する開口部の位置にずれが生じることはない。
従って、開口部の形成位置のずれを考慮して開口部を大きく形成する必要がなく、部品内蔵基板の小型化を図ることができる。
また、開口部は、枠状部の内周縁に沿う形状となるため、開口部の形状(例えば矩形の開口部の角部の形状)はレーザ光のスポット径やドリル径などの影響を受けない。このため、スポット径が大きいレーザ光を用いることにより加工時間の短縮が可能となる。
また、レーザ光のスポット径やドリル径などを考慮する必要ないことから、開口部の大きさや形状について設計の自由度が高められ、部品内蔵基板の小型化を図る上で有利となる。
According to the present invention, since the opening is formed in the inner region of the frame-shaped portion made of the second conductive layer, the position of the opening with respect to the second conductive layer (conductive circuit) does not shift.
Therefore, it is not necessary to form a large opening in consideration of a deviation in the formation position of the opening, and the component-embedded substrate can be downsized.
Further, since the opening has a shape along the inner peripheral edge of the frame-like portion, the shape of the opening (for example, the shape of the corner of the rectangular opening) is not affected by the spot diameter of the laser beam, the drill diameter, or the like. . For this reason, the processing time can be shortened by using a laser beam having a large spot diameter.
In addition, since it is not necessary to consider the spot diameter or drill diameter of the laser beam, the degree of freedom in designing the size and shape of the opening is increased, which is advantageous in reducing the size of the component-embedded substrate.

本発明の一実施形態の部品内蔵基板を示す断面図である。It is sectional drawing which shows the component built-in board | substrate of one Embodiment of this invention. 図1の部品内蔵基板の枠状部および開口部を示す平面図である。It is a top view which shows the frame-shaped part and opening part of the component built-in board | substrate of FIG. 図1の部品内蔵基板の製造工程を示す工程図である。It is process drawing which shows the manufacturing process of the component built-in board | substrate of FIG. 前図に続く工程図である。It is process drawing following a previous figure. 前図に続く工程図である。It is process drawing following a previous figure. 前図に続く工程図である。It is process drawing following a previous figure. 前図に続く工程図である。It is process drawing following a previous figure. 前図に続く工程図である。It is process drawing following a previous figure. 開口部を形成する工程の一例を模式的に示す断面図である。It is sectional drawing which shows typically an example of the process of forming an opening part. 開口部を形成する工程を模式的に示す平面図である。It is a top view which shows typically the process of forming an opening part. 開口部を形成する工程の他の例を模式的に示す断面図である。It is sectional drawing which shows typically the other example of the process of forming an opening part. 開口部を形成する前の状態の配線板を示す図であり、(A)は断面図であり、(B)は平面図である。It is a figure which shows the wiring board of the state before forming an opening part, (A) is sectional drawing, (B) is a top view. 従来の部品内蔵基板の一例を示す断面図である。It is sectional drawing which shows an example of the conventional component built-in board | substrate. 前図の部品内蔵基板の製造工程を示す工程図である。It is process drawing which shows the manufacturing process of the component built-in board | substrate of a previous figure. 前図に続く工程図である。It is process drawing following a previous figure. 開口部を形成する工程を示す平面図であり、(A)は開口部を形成する前の状態を示し、(B)は開口部を形成した状態を示す。It is a top view which shows the process of forming an opening part, (A) shows the state before forming an opening part, (B) shows the state which formed the opening part.

本発明の一実施形態を、図面を参照して説明する。
図1は、本発明の部品内蔵基板の製造方法である部品内蔵基板10を示す断面図である。図2は、部品内蔵基板10の枠状部7および開口部6を示す平面図である。以下、図1における上下位置に基づいて各構成の位置関係を説明することがある。
An embodiment of the present invention will be described with reference to the drawings.
FIG. 1 is a cross-sectional view showing a component built-in substrate 10 which is a method for manufacturing a component built-in substrate according to the present invention. FIG. 2 is a plan view showing the frame-like portion 7 and the opening 6 of the component-embedded substrate 10. Hereinafter, the positional relationship of each component may be described based on the vertical position in FIG.

図1に示すように、部品内蔵基板10は、例えば電子部品2を内蔵した積層プリント配線板であって、電子部品2を内蔵した両面配線板2Aの一方および他方の面に、それぞれ片面配線板である配線板1A、3Aを積層したものである。
配線板1A〜3Aは、例えばポリイミドなどからなる絶縁樹脂層3の一方または両方の面に、銅などの導電体からなる導電層4を備え、接着層5を介して互いに接着され、層間導通部1によって互いに電気的に接続されている。
As shown in FIG. 1, the component built-in substrate 10 is, for example, a laminated printed wiring board that incorporates an electronic component 2. The wiring boards 1A and 3A are stacked.
The wiring boards 1A to 3A include, for example, a conductive layer 4 made of a conductor such as copper on one or both surfaces of an insulating resin layer 3 made of polyimide or the like, and are bonded to each other via an adhesive layer 5 to provide an interlayer conductive portion. 1 are electrically connected to each other.

上層配線板1Aは、絶縁樹脂層3(3a)の一面3a1側(図1の上面)に導電層4(4a1)が形成されている。絶縁樹脂層3(3a)には、絶縁樹脂層3を貫通して導電層4(4a1)から他面3a2側(図1の下面)に至る1または複数の層間導通部1(1a1)が形成されている。
層間導通部1(1a1)は、下端が両面配線板2Aの一面側(上面)の導電層4(4b1)に達し、これによって、上層配線板1Aの導電層4(4a1)と両面配線板2Aの導電層4(4b1)とを接続している。
上層配線板1Aとしては、例えばポリイミドなどからなる絶縁樹脂層3の一方の面に、銅などの導電体からなる導電層4が設けられた片面銅張積層板(CCL)を使用できる。
In the upper wiring board 1A, a conductive layer 4 (4a1) is formed on one surface 3a1 side (upper surface in FIG. 1) of the insulating resin layer 3 (3a). The insulating resin layer 3 (3a) is formed with one or a plurality of interlayer conductive portions 1 (1a1) penetrating the insulating resin layer 3 and extending from the conductive layer 4 (4a1) to the other surface 3a2 side (lower surface in FIG. 1). Has been.
The lower end of the interlayer conductive portion 1 (1a1) reaches the conductive layer 4 (4b1) on the one surface side (upper surface) of the double-sided wiring board 2A, whereby the conductive layer 4 (4a1) of the upper-layer wiring board 1A and the double-sided wiring board 2A. The conductive layer 4 (4b1) is connected.
As the upper wiring board 1A, for example, a single-sided copper clad laminate (CCL) in which a conductive layer 4 made of a conductor such as copper is provided on one surface of an insulating resin layer 3 made of polyimide or the like can be used.

両面配線板2A(第2の基板)は、絶縁樹脂層3(3b)(第2絶縁層)の一面3b1側(上面)に導電層4(4b1)(第2導電層)が形成され、他面3b2側(下面)に導電層4(4b2)(第2導電層)が形成されている。
絶縁樹脂層3(3b)には、電子部品2を内蔵する位置に開口部6が形成されている。
In the double-sided wiring board 2A (second substrate), the conductive layer 4 (4b1) (second conductive layer) is formed on the one surface 3b1 side (upper surface) of the insulating resin layer 3 (3b) (second insulating layer). A conductive layer 4 (4b2) (second conductive layer) is formed on the surface 3b2 side (lower surface).
An opening 6 is formed in the insulating resin layer 3 (3b) at a position where the electronic component 2 is built.

図1および図2に示すように、絶縁樹脂層3(3b)の一面3b1側(上面)の導電層4(4b1)は、平面視枠状の枠状部7b1(反対面側の枠状部)を有する。
枠状部7b1は導電層4(4b1)の一部であり、例えば銅などの導電体からなる層である。導電層4(4b1)の他の部分は導電回路12(配線層)を構成する。
枠状部7b1の外形(平面視形状)は特に限定されず、例えば矩形(正方形、長方形)、円形、不定形などであってよい。図示例の枠状部7b1の外形は矩形(正方形)である。
As shown in FIGS. 1 and 2, the conductive layer 4 (4b1) on the one surface 3b1 side (upper surface) of the insulating resin layer 3 (3b) is a frame-like portion 7b1 having a frame shape in plan view (a frame-like portion on the opposite surface side). ).
The frame-like portion 7b1 is a part of the conductive layer 4 (4b1), and is a layer made of a conductor such as copper, for example. The other part of the conductive layer 4 (4b1) constitutes the conductive circuit 12 (wiring layer).
The outer shape (planar shape) of the frame-like portion 7b1 is not particularly limited, and may be, for example, a rectangle (square, rectangle), a circle, an indefinite shape, or the like. The outer shape of the frame-like portion 7b1 in the illustrated example is a rectangle (square).

枠状部7b1の内側領域8b1の平面視形状(枠状部7b1の内周縁7b1aがなす形状)は、電子部品2に応じた形状とされ、例えば矩形(正方形、長方形)、円形、不定形などであってよい。図示例の内側領域8b1は矩形(正方形)である。枠状部7b1は一定幅の矩形枠状とすることができる。   The planar view shape (the shape formed by the inner peripheral edge 7b1a of the frame-like portion 7b1) of the inner region 8b1 of the frame-like portion 7b1 is a shape corresponding to the electronic component 2, for example, a rectangle (square, rectangle), a circle, an indeterminate shape, etc. It may be. The inner region 8b1 in the illustrated example is a rectangle (square). The frame-like part 7b1 can be a rectangular frame having a constant width.

絶縁樹脂層3(3b)には、平面視において枠状部7b1の内側領域8b1に、内側領域8b1と同じ平面視形状の開口部6が形成されている。開口部6は、内側領域8b1全域の絶縁樹脂層3(3b)を厚さ方向に貫通して形成されている。   In the insulating resin layer 3 (3b), the opening 6 having the same planar view shape as the inner region 8b1 is formed in the inner region 8b1 of the frame-like portion 7b1 in a plan view. The opening 6 is formed through the insulating resin layer 3 (3b) in the entire inner region 8b1 in the thickness direction.

絶縁樹脂層3(3b)の他面3b2側(下面)の導電層4(4b2)は、平面視枠状の枠状部7b2(一方の面側の枠状部)を有する。
枠状部7b2は導電層4(4b2)の一部であり、例えば銅などの導電体からなる層である。導電層4(4b2)の他の部分は導電回路12(配線層)を構成する。
枠状部7b2の外形(平面視形状)は特に限定されず、例えば矩形(正方形、長方形等)、円形、不定形などであってよい。図示例の枠状部7b2の外形は矩形(正方形)である。枠状部7b2の内側領域8b2の平面視形状(枠状部7b2の内周縁7b2aがなす形状)は、例えば矩形(正方形、長方形)、円形、不定形などであってよい。図示例の内側領域8b2は矩形(正方形)である。枠状部7b2は一定幅の矩形枠状とすることができる。
The conductive layer 4 (4b2) on the other surface 3b2 side (lower surface) of the insulating resin layer 3 (3b) has a frame-like portion 7b2 (a frame-like portion on one surface side) having a frame shape in plan view.
The frame-like portion 7b2 is a part of the conductive layer 4 (4b2), and is a layer made of a conductor such as copper. The other part of the conductive layer 4 (4b2) constitutes the conductive circuit 12 (wiring layer).
The outer shape (planar shape) of the frame-like portion 7b2 is not particularly limited, and may be, for example, a rectangle (square, rectangle, etc.), a circle, an indeterminate shape, or the like. The outer shape of the frame-like portion 7b2 in the illustrated example is a rectangle (square). The planar view shape (the shape formed by the inner peripheral edge 7b2a of the frame-like portion 7b2) of the inner region 8b2 of the frame-like portion 7b2 may be, for example, a rectangle (square, rectangle), a circle, an indefinite shape, or the like. The inner region 8b2 in the illustrated example is a rectangle (square). The frame-like portion 7b2 can be a rectangular frame having a constant width.

図2に示すように、絶縁樹脂層3(3b)の他面3b2側(図1の下面)の内側領域8b2は、一面3b1側(図1の上面)の内側領域8b1に比べて面積が大きく、かつ平面視において内側領域8b1を包含することが望ましい。
枠状部7b2の内周縁7b2aは、平面視において、全周にわたって枠状部7b1の内周縁7b1aよりも外方に位置していることが好ましい。内周縁7b2aは、全周にわたって内周縁7b1aに対して一定の間隔をおいて外方に位置していることが望ましい。
図示例では、内周縁7b2aの4つの辺部は、それぞれ対応する内周縁7b1aの辺部より例えば20〜50μm外方に位置させることができる。内周縁7b2aの辺部の長さは、対応する内周縁7b1aの辺部より例えば30〜150μm長いことが好ましい。
図2に示す例では、枠状部7b2の内側領域8b2は、枠状部7b1の内側領域8b1に比べて面積が大きく、かつ平面視において内側領域8b1を包含するため、枠状部7b2の平面視位置が枠状部7b1に対してずれた場合でも開口部6の寸法に影響が及ばない。このため、開口部6への電子部品2の内蔵に支障が生じることはない。
両面配線板2Aとしては、例えばポリイミドなどからなる絶縁樹脂層3の両面に導電層4が設けられた両面銅張積層板(CCL)を使用できる。
As shown in FIG. 2, the inner region 8b2 on the other surface 3b2 side (lower surface in FIG. 1) of the insulating resin layer 3 (3b) has a larger area than the inner region 8b1 on the one surface 3b1 side (upper surface in FIG. 1). In addition, it is desirable to include the inner region 8b1 in plan view.
The inner peripheral edge 7b2a of the frame-like part 7b2 is preferably located outward from the inner peripheral edge 7b1a of the frame-like part 7b1 over the entire circumference in plan view. It is desirable that the inner peripheral edge 7b2a is located outward with a certain distance from the inner peripheral edge 7b1a over the entire periphery.
In the illustrated example, the four side portions of the inner peripheral edge 7b2a can be positioned, for example, 20 to 50 μm outward from the corresponding side portions of the inner peripheral edge 7b1a. The length of the side part of the inner peripheral edge 7b2a is preferably 30 to 150 μm longer than the corresponding side part of the inner peripheral edge 7b1a, for example.
In the example shown in FIG. 2, the inner region 8b2 of the frame-like portion 7b2 has a larger area than the inner region 8b1 of the frame-like portion 7b1, and includes the inner region 8b1 in plan view. Even when the viewing position is deviated from the frame-like portion 7b1, the dimension of the opening 6 is not affected. For this reason, there is no problem in incorporating the electronic component 2 into the opening 6.
As the double-sided wiring board 2A, for example, a double-sided copper-clad laminate (CCL) in which conductive layers 4 are provided on both sides of an insulating resin layer 3 made of polyimide or the like can be used.

図1に示すように、下層配線板3A(第1の基板)は、絶縁樹脂層3(3c)(第1絶縁層)の他面3c2側(下面)(一方の面)に導電層4(4c1)(第1導電層)が形成されている。絶縁樹脂層3(3c)には、絶縁樹脂層3を貫通して導電層4(4c1)から一面3c1側(上面)(他方の面)に至る1または複数の層間導通部1(1c1、1c2)が形成されている。
一部の層間導通部1(1c1)は、上端が両面配線板2Aの他面3b2側(下面)の導電層4(4b2)に達し、これによって、両面配線板2Aの導電層4(4b2)と下層配線板3Aの導電層4(4c1)とを接続している。
他の一部の層間導通部1(1c2)は、上端が電子部品2の導電層4(4d1)に達し、これによって、電子部品2の導電層4(4d1)と下層配線板3Aの導電層4(4c2)とを接続している。
As shown in FIG. 1, the lower wiring board 3A (first substrate) has a conductive layer 4 (on one surface) on the other surface 3c2 side (lower surface) (one surface) of the insulating resin layer 3 (3c) (first insulating layer). 4c1) (first conductive layer) is formed. The insulating resin layer 3 (3c) includes one or a plurality of interlayer conductive portions 1 (1c1, 1c2) penetrating the insulating resin layer 3 and extending from the conductive layer 4 (4c1) to the one surface 3c1 side (upper surface) (the other surface). ) Is formed.
Some of the interlayer conductive portions 1 (1c1) have their upper ends reaching the conductive layer 4 (4b2) on the other surface 3b2 side (lower surface) of the double-sided wiring board 2A, and thereby the conductive layer 4 (4b2) of the double-sided wiring board 2A. Are connected to the conductive layer 4 (4c1) of the lower wiring board 3A.
The other upper part of the interlayer conductive portion 1 (1c2) reaches the conductive layer 4 (4d1) of the electronic component 2 at the upper end, whereby the conductive layer 4 (4d1) of the electronic component 2 and the conductive layer of the lower wiring board 3A 4 (4c2).

電子部品2は、抵抗やコンデンサ等の受動部品であってもよいし、IC、ダイオード、トランジスタ等の能動部品であってもよい。また、半導体素子を有する半導体(ベア)チップやWLCSPであってもよい。
電子部品2の他面2a2側(下面)には導電層4(4d1)が形成されている。
電子部品2は、両面配線板2Aの開口部6内に配置されているため、上層配線板1Aと下層配線板3Aとの間に配置される。
The electronic component 2 may be a passive component such as a resistor or a capacitor, or may be an active component such as an IC, a diode, or a transistor. Further, it may be a semiconductor (bare) chip having a semiconductor element or WLCSP.
A conductive layer 4 (4d1) is formed on the other surface 2a2 side (lower surface) of the electronic component 2.
Since the electronic component 2 is disposed in the opening 6 of the double-sided wiring board 2A, it is disposed between the upper wiring board 1A and the lower wiring board 3A.

接着層5は、プリント配線板の製造分野において公知の各種接着材を使用できる。例えばポリイミド系接着材、エポキシ系接着材などが好適である。
層間導通部1は、例えばニッケル、銀、銅、錫、ビスマス、インジウム、鉛などの金属粒子を含む導電性ペーストを加熱、硬化させたものが好適である。
For the adhesive layer 5, various kinds of adhesives known in the field of manufacturing printed wiring boards can be used. For example, a polyimide-based adhesive or an epoxy-based adhesive is suitable.
The interlayer conductive portion 1 is preferably one obtained by heating and curing a conductive paste containing metal particles such as nickel, silver, copper, tin, bismuth, indium, and lead.

次に、本発明の部品内蔵基板の製造方法の一例を具体的に説明する。
図3に示すように、両面に導電層4Aが形成された絶縁樹脂層3(3b)を用意し、図4に示すように、レーザ加工等により絶縁樹脂層3に貫通孔9を形成する。
図5に示すように、貫通孔9の内面に、絶縁樹脂層3の両面の導電層4を互いに接続するための導電層4(4b3)を電解メッキなどにより形成する。
図6に示すように、導電層4Aにフォトリソグラフィーによるパターニングを施して導電層4を形成する。このとき形成される導電層4は、枠状部7b1、7b2と導電回路12とを含む。
枠状部7b1、7b2は、導電回路12と同様に導電層4の一部であり、導電回路12と同時に形成されるため、導電回路12に対する開口部6の位置にずれが生じることはない。このため、電子部品2の実装位置の精度向上が可能となる。
Next, an example of the manufacturing method of the component built-in substrate of the present invention will be specifically described.
As shown in FIG. 3, an insulating resin layer 3 (3b) having a conductive layer 4A formed on both surfaces is prepared, and through holes 9 are formed in the insulating resin layer 3 by laser processing or the like as shown in FIG.
As shown in FIG. 5, a conductive layer 4 (4b3) for connecting the conductive layers 4 on both sides of the insulating resin layer 3 to each other is formed on the inner surface of the through hole 9 by electrolytic plating or the like.
As shown in FIG. 6, the conductive layer 4A is formed by patterning the conductive layer 4A by photolithography. The conductive layer 4 formed at this time includes frame-like portions 7b1 and 7b2 and a conductive circuit 12.
The frame-like portions 7b1 and 7b2 are part of the conductive layer 4 similarly to the conductive circuit 12, and are formed at the same time as the conductive circuit 12, so that the position of the opening 6 with respect to the conductive circuit 12 does not shift. For this reason, the accuracy of the mounting position of the electronic component 2 can be improved.

次いで、図7に示すように、レーザ加工により枠状部7b1の内側領域8b1の絶縁樹脂層3(3b)を除去することにより、内側領域8b1と同形状(平面視形状)を有する開口部6を形成する。
以下、この開口部6の形成工程を、図9および図10を参照して詳しく説明する。
図9(A)および図9(B)に示すように、絶縁樹脂層3(3b)の一面3b1側から、レーザ光L1を枠状部7b1の内側領域8b1の絶縁樹脂層3(3b)に照射する。具体的には、レーザ光L1は少なくとも内側領域8b1の周縁部8b1a(図10(A)参照)を含む領域に照射される。この例では、レーザ光L1は、内周縁7b1aに沿って移動させつつ照射される。なお、レーザ光L1は内側領域8b1の全域に一度に照射してもよい。レーザ加工には、炭酸ガスレーザやエキシマレーザなどを使用できる。
Next, as shown in FIG. 7, by removing the insulating resin layer 3 (3b) in the inner region 8b1 of the frame-like portion 7b1 by laser processing, the opening 6 having the same shape (planar shape) as the inner region 8b1. Form.
Hereinafter, the step of forming the opening 6 will be described in detail with reference to FIGS.
As shown in FIGS. 9A and 9B, the laser light L1 is applied to the insulating resin layer 3 (3b) in the inner region 8b1 of the frame-like portion 7b1 from the one surface 3b1 side of the insulating resin layer 3 (3b). Irradiate. Specifically, the laser beam L1 is applied to a region including at least the peripheral portion 8b1a (see FIG. 10A) of the inner region 8b1. In this example, the laser beam L1 is irradiated while being moved along the inner peripheral edge 7b1a. In addition, you may irradiate the laser beam L1 to the whole inner area | region 8b1 at once. For laser processing, a carbon dioxide laser, an excimer laser, or the like can be used.

図9(B)および図10(A)に示すように、レーザ光L1は、少なくとも枠状部7b1の内周縁7b1aを含む領域にも照射することが好ましい。この例では、レーザ光L1の一部は内周縁7b1aを含む部分の枠状部7b1に照射され、他部は内側領域8b1の周縁部8b1aを含む部分の絶縁樹脂層3(3b)に照射される。
レーザ光L1を枠状部7b1の内周縁7b1aを含む領域にも照射することによって、レーザ光L1を内側領域8b1の周縁部8b1aに確実に照射し、内側領域8b1と同じ形状の開口部6を確実に形成することができる。
レーザ光L1は、絶縁樹脂層3のみが加工され、枠状部7b1が損傷を受けないように出力調整されることが好ましい。
レーザ光L1を内周縁7b1aに沿って全周にわたって照射することによって、絶縁樹脂層3(3b)に開口部6を形成することができる。
As shown in FIG. 9B and FIG. 10A, it is preferable that the laser beam L1 is applied to at least a region including the inner peripheral edge 7b1a of the frame-like portion 7b1. In this example, a part of the laser beam L1 is irradiated to the frame-like part 7b1 including the inner peripheral edge 7b1a, and the other part is irradiated to the insulating resin layer 3 (3b) including the peripheral part 8b1a of the inner region 8b1. The
By irradiating the region including the inner peripheral edge 7b1a of the frame-shaped portion 7b1 with the laser light L1, the laser light L1 is surely applied to the peripheral portion 8b1a of the inner region 8b1, and the opening 6 having the same shape as the inner region 8b1 is formed. It can be reliably formed.
The laser light L1 is preferably output adjusted so that only the insulating resin layer 3 is processed and the frame-like portion 7b1 is not damaged.
By irradiating the laser beam L1 over the entire circumference along the inner peripheral edge 7b1a, the opening 6 can be formed in the insulating resin layer 3 (3b).

図9(C)および図9(D)に示すように、内周縁7b1aに沿ってレーザ加工を行うことで切り出された絶縁樹脂層3の切出し部分13を除去する。
図9(D)および図10(B)に示すように、レーザ光L1は内側領域8b1の周縁部8b1aを含む領域の絶縁樹脂層3(3b)に照射されるため、内側領域8b1と同じ形状の開口部6を精度よく形成することができる。
開口部6の形成は、個片化した後の絶縁樹脂層3に対して行ってもよいし、個片化される前の絶縁樹脂層3に対して行ってもよい(図14および図15を参照)。
As shown in FIGS. 9C and 9D, the cut-out portion 13 of the insulating resin layer 3 cut out by laser processing along the inner peripheral edge 7b1a is removed.
As shown in FIG. 9D and FIG. 10B, the laser light L1 is applied to the insulating resin layer 3 (3b) in the region including the peripheral edge 8b1a of the inner region 8b1, and thus has the same shape as the inner region 8b1. The opening 6 can be formed with high accuracy.
The opening 6 may be formed on the insulating resin layer 3 after being separated into pieces, or may be formed on the insulating resin layer 3 before being separated into pieces (FIGS. 14 and 15). See).

図8に示すように、上層配線板1A、両面配線板2A、下層配線板3Aおよび電子部品2をそれぞれ位置合わせして配置し、配線板1A〜3Aおよび電子部品2を一括積層法により積層することによって、図1に示す部品内蔵基板10を得る。
配線板1A〜3Aおよび電子部品2を積層する際には、両面配線板2Aには厚さ方向の大きな力が加えられるが、枠状部7b1、7b2が補強部材として機能するため、接着層5の流動の影響により絶縁樹脂層3(3b)に曲げ変形が生じることはなく、部品内蔵基板10の平坦性を確保できる。
As shown in FIG. 8, the upper layer wiring board 1A, the double-sided wiring board 2A, the lower layer wiring board 3A, and the electronic component 2 are respectively aligned and arranged, and the wiring boards 1A to 3A and the electronic component 2 are laminated by a batch lamination method. Thus, the component built-in substrate 10 shown in FIG. 1 is obtained.
When the wiring boards 1A to 3A and the electronic component 2 are stacked, a large force in the thickness direction is applied to the double-sided wiring board 2A, but the frame-like portions 7b1 and 7b2 function as reinforcing members, and therefore the adhesive layer 5 As a result, the insulating resin layer 3 (3b) is not bent and deformed by the influence of the flow, and the flatness of the component-embedded substrate 10 can be ensured.

部品内蔵基板10では、開口部6が、導電層4からなる枠状部7b1の内側領域8b1に形成されているので、導電層4(導電回路12)に対する開口部6の位置にずれが生じることはない。
従って、開口部6の形成位置のずれを考慮して開口部6を大きく形成する必要がなく、部品内蔵基板10の小型化を図ることができる。
また、開口部6は、枠状部7b1の内周縁7b1aに沿う形状となるため、開口部6の形状(例えば矩形の開口部6の角部の形状)はレーザ光のスポット径やドリル径などの影響を受けない。このため、スポット径が大きいレーザ光L1を用いることにより加工時間の短縮が可能となる。加工時間は、枠状部を形成しない場合に比べて例えば1/3〜1/5程度とすることができる。
また、レーザ光のスポット径やドリル径などを考慮する必要ないことから、開口部6の大きさや形状について設計の自由度が高められ、部品内蔵基板10の小型化を図る上で有利となる。
In the component built-in substrate 10, the opening 6 is formed in the inner region 8 b 1 of the frame-like portion 7 b 1 made of the conductive layer 4, so that the position of the opening 6 with respect to the conductive layer 4 (conductive circuit 12) is shifted. There is no.
Accordingly, it is not necessary to make the opening 6 large in consideration of a shift in the position where the opening 6 is formed, and the component-embedded substrate 10 can be downsized.
Further, since the opening 6 has a shape along the inner peripheral edge 7b1a of the frame-like portion 7b1, the shape of the opening 6 (for example, the shape of the corner of the rectangular opening 6) is the laser beam spot diameter, drill diameter, etc. Not affected. For this reason, the processing time can be shortened by using the laser beam L1 having a large spot diameter. The processing time can be set to, for example, about 1/3 to 1/5 as compared with the case where the frame-shaped portion is not formed.
In addition, since it is not necessary to consider the spot diameter of the laser beam, the drill diameter, etc., the degree of freedom in designing the size and shape of the opening 6 is increased, which is advantageous in reducing the size of the component-embedded substrate 10.

上記製造方法ではレーザ加工によって開口部6を形成したが、開口部6は、他の方法によって形成することもできる。以下、ウェットエッチングによって開口部6を形成する方法の一例を説明する。
図3〜図6に示す方法に従って、導電層4を有する絶縁樹脂層3(3b)(以下、配線板2Bという)を作製する。
図11(A)および図11(B)に示すように、枠状部7b1、7b2の内周縁7b1a、7b2aを含む部分(内周部分14b1、14b2)および内側領域8b1、8b2を残して、絶縁樹脂層3(3b)の面3b1、3b2と導電層4(4b1、4b2)を保護用の被覆樹脂11で覆う。
図11(C)に示すように、配線板2Bを、例えば水酸化カリウムなどを主成分とするエッチング液に接触させることによって、枠状部7b1の内側領域8b1の絶縁樹脂層3(3b)を除去して開口部6を形成する。次いで、図11(D)に示すように、被覆樹脂11を除去する。
エッチングによる開口部6の形成は、個片化される前の絶縁樹脂層3に対して行ってもよい(図14および図15を参照)。個片化の前の絶縁樹脂層3に対して開口部6を形成することによって、複数の開口部6を一度に形成することができ、製造効率を高めることができる。
In the manufacturing method described above, the opening 6 is formed by laser processing, but the opening 6 may be formed by other methods. Hereinafter, an example of a method for forming the opening 6 by wet etching will be described.
Insulating resin layer 3 (3b) (hereinafter referred to as wiring board 2B) having conductive layer 4 is fabricated according to the method shown in FIGS.
As shown in FIGS. 11 (A) and 11 (B), the frame-like portions 7b1 and 7b2 are insulated with the portions including the inner peripheral edges 7b1a and 7b2a (the inner peripheral portions 14b1 and 14b2) and the inner regions 8b1 and 8b2. The surface 3b1, 3b2 of the resin layer 3 (3b) and the conductive layer 4 (4b1, 4b2) are covered with a protective coating resin 11.
As shown in FIG. 11C, the insulating resin layer 3 (3b) in the inner region 8b1 of the frame-like portion 7b1 is brought into contact with the wiring board 2B, for example, by an etching solution mainly containing potassium hydroxide. By removing, the opening 6 is formed. Next, as shown in FIG. 11D, the coating resin 11 is removed.
The formation of the opening 6 by etching may be performed on the insulating resin layer 3 before being separated into pieces (see FIGS. 14 and 15). By forming the openings 6 in the insulating resin layer 3 before separation, a plurality of openings 6 can be formed at a time, and the manufacturing efficiency can be increased.

この方法では、エッチングによって、枠状部7b1の内側の絶縁樹脂層3(3b)を除去することによって開口部6を形成するので、容易な操作で、開口部6を精度よく形成することができる。   In this method, since the opening 6 is formed by removing the insulating resin layer 3 (3b) inside the frame-like portion 7b1 by etching, the opening 6 can be accurately formed by an easy operation. .

次に、ウェットエッチングによって開口部6を形成する方法の他の例を、図12を参照して説明する。
図12は、開口部6を形成する前の状態の配線板2Bを示す図であり、(A)は断面図であり、(B)は平面図である。
この方法は、導電層4A(図5参照)にパターニングを施して導電層4を形成する際に、内側領域8b1、8b2の導電層を全て除去するのではなく、図12に示すように、内側領域8b1、8b2の周縁部のみの導電層を除去し、内側領域8b1、8b2の中央部分に導電層4B1、4B2を残した状態として、図11(B)〜図11(D)に示す工程に従って、開口部6を形成する。
この方法では、導電層4B1、4B2が補強部材として機能するため、絶縁樹脂層3(3b)に変形が生じにくいことから、開口部6を精度よく形成することができる。
Next, another example of a method for forming the opening 6 by wet etching will be described with reference to FIG.
12A and 12B are diagrams showing the wiring board 2B in a state before the opening 6 is formed. FIG. 12A is a cross-sectional view and FIG. 12B is a plan view.
In this method, when the conductive layer 4 is formed by patterning the conductive layer 4A (see FIG. 5), not all the conductive layers in the inner regions 8b1 and 8b2 are removed, but as shown in FIG. The conductive layers only in the peripheral portions of the regions 8b1 and 8b2 are removed, and the conductive layers 4B1 and 4B2 are left in the central portions of the inner regions 8b1 and 8b2, and the steps shown in FIGS. 11B to 11D are performed. The opening 6 is formed.
In this method, since the conductive layers 4B1 and 4B2 function as reinforcing members, the insulating resin layer 3 (3b) is not easily deformed, and therefore the opening 6 can be formed with high accuracy.

なお、図1等に示す部品内蔵基板10は、配線板1A〜3Aを積層したものであるが、本発明で製造される部品内蔵基板は、これら以外の他の配線板を含んでいてもよい。   The component built-in substrate 10 shown in FIG. 1 and the like is a laminate of the wiring boards 1A to 3A, but the component built-in substrate manufactured in the present invention may include other wiring boards other than these. .

1、1c2・・・層間導通部、2・・・電子部品、2A・・・両面配線板(第2の基板)、3・・・絶縁樹脂層(絶縁層)、3b・・・絶縁樹脂層(第2絶縁層)、3c・・・絶縁樹脂層(第1絶縁層)、3A・・・下層配線板(第1の基板)、4・・・導電層、4b1、4b2・・・導電層(第2導電層)、4c1・・・導電層(第1導電層)、6・・・開口部、7b1・・・枠状部(反対面側の枠状部)、7b1a・・・内周縁、7b2・・・枠状部(一方の面側の枠状部)、8、8b1、8b2・・・内側領域、10・・・部品内蔵基板。 DESCRIPTION OF SYMBOLS 1, 1c2 ... Interlayer conduction | electrical_connection part, 2 ... Electronic component, 2A ... Double-sided wiring board (2nd board | substrate), 3 ... Insulation resin layer (insulation layer), 3b ... Insulation resin layer (Second insulating layer), 3c ... Insulating resin layer (first insulating layer), 3A ... Lower wiring board (first substrate), 4 ... Conductive layer, 4b1, 4b2 ... Conductive layer (Second conductive layer), 4c1 ... conductive layer (first conductive layer), 6 ... opening, 7b1 ... frame-like part (frame-like part on the opposite side), 7b1a ... inner periphery 7b2... Frame-shaped portion (frame-shaped portion on one surface side) 8, 8b1, 8b2.

本発明は、第1絶縁層の一方の面に第1導電層が形成され、前記第1絶縁層を貫通し前記第1導電層から他方の面に至る層間導通部を有する第1の基板と、前記層間導通部と接続される電子部品と、第2絶縁層に第2導電層が形成され、前記第2絶縁層の前記電子部品を内蔵する位置に開口部が形成された第2の基板と、を少なくとも備えた部品内蔵基板であって、前記第2導電層が、平面視枠状の枠状部を有し、前記開口部は、前記枠状部の内側領域全域の前記第2絶縁層を厚さ方向に貫通して形成され、前記枠状部は、前記第2絶縁層の両面にそれぞれ形成され、そのうち前記第1の基板側の前記枠状部は、反対面側の前記枠状部に比べて内側領域の面積が大きく、かつ前記第1の基板側の内側領域が平面視において前記反対面側の内側領域を包含し、前記第1の基板側の枠状部の内周縁は、平面視において、全周にわたって前記反対面側の枠状部の内周縁よりも外方に位置し、前記電子部品は、前記第1の基板側の面に形成された部品導電層で前記層間導通部に接続されている部品内蔵基板を提供する。
本発明は、前記第2の基板の前記第1の基板側とは反対面側に、第3絶縁層を有する第3の基板を備え、前記第3の基板は、前記第3絶縁層の前記第2の基板側とは反対面側に形成された第3導電層と、前記第3絶縁層を貫通し前記第3導電層から前記第2の基板側の面に至る層間導通部を有することが好ましい。
The present invention includes a first substrate having a first conductive layer formed on one surface of the first insulating layer, and having an interlayer conductive portion penetrating the first insulating layer and extending from the first conductive layer to the other surface. An electronic component connected to the interlayer conductive portion; a second substrate in which a second conductive layer is formed in a second insulating layer; and an opening is formed in the second insulating layer at a position in which the electronic component is embedded. And the second conductive layer has a frame-like portion having a frame shape in plan view, and the opening is the second insulation in the entire inner region of the frame-like portion. The frame-shaped portion is formed on both surfaces of the second insulating layer, and the frame-shaped portion on the first substrate side is the frame on the opposite surface side. The area of the inner region is larger than the shape portion, and the inner region on the first substrate side is the inner side on the opposite surface side in a plan view. An inner periphery of the frame-like part on the first substrate side is located outside the inner periphery of the frame-like part on the opposite surface side in plan view, and the electronic component is A component-embedded substrate connected to the interlayer conductive portion by a component conductive layer formed on the first substrate side surface is provided.
The present invention includes a third substrate having a third insulating layer on a surface opposite to the first substrate side of the second substrate, and the third substrate includes the third insulating layer. A third conductive layer formed on a side opposite to the second substrate side, and an interlayer conductive portion that penetrates the third insulating layer and extends from the third conductive layer to the surface on the second substrate side. Is preferred.

本発明は、前記部品内蔵基板の製造方法であって、前記第1の基板側とは反対面側の前記枠状部の内側に位置する前記第2絶縁層にレーザ光を照射することにより、レーザ加工によって前記第2絶縁層を厚さ方向に貫通して前記開口部を形成する工程を含み、前記開口部を形成するにあたって、前記レーザ光を、前記第1の基板側とは反対面側から、少なくともこの面側の枠状部の内周縁を含む領域に照射する部品内蔵基板の製造方法を提供する。
本発明は、前記部品内蔵基板の製造方法であって、前記第1の基板側とは反対面側の前記枠状部の内側に位置する前記第2絶縁層を、ウェットエッチングにより厚さ方向に貫通して前記開口部を形成する工程を含む部品内蔵基板の製造方法を提供する。
The present invention is a method for manufacturing the component-embedded substrate, and by irradiating the second insulating layer located inside the frame-like portion on the opposite side to the first substrate side with laser light, Including a step of forming the opening through the second insulating layer in the thickness direction by laser processing, and the laser beam is formed on the side opposite to the first substrate when forming the opening. From this , the manufacturing method of the component built-in board | substrate which irradiates the area | region including the inner periphery of the frame-shaped part at least on this surface side is provided.
The present invention is a method for manufacturing the component-embedded substrate, wherein the second insulating layer positioned inside the frame-like portion on the opposite surface side to the first substrate side is wet-etched in the thickness direction. Provided is a method for manufacturing a component-embedded substrate, which includes a step of forming the opening through the component.

Claims (4)

第1絶縁層の一方の面に第1導電層が形成され、前記第1絶縁層を貫通し前記第1導電層から他方の面に至る層間導通部を有する第1の基板と、
前記層間導通部と接続される電子部品と、
第2絶縁層に第2導電層が形成され、前記第2絶縁層の前記電子部品を内蔵する位置に開口部が形成された第2の基板と、を少なくとも備えた部品内蔵基板であって、
前記第2導電層が、平面視枠状の枠状部を有し、
前記開口部は、前記枠状部の内側領域全域の前記第2絶縁層を厚さ方向に貫通して形成されていることを特徴とする部品内蔵基板。
A first substrate having a first conductive layer formed on one surface of the first insulating layer and having an interlayer conductive portion penetrating the first insulating layer and extending from the first conductive layer to the other surface;
An electronic component connected to the interlayer conductive portion;
A component-embedded substrate comprising at least a second substrate in which a second conductive layer is formed in the second insulating layer and an opening is formed at a position where the electronic component of the second insulating layer is embedded;
The second conductive layer has a frame-like portion having a frame shape in plan view;
The component-embedded substrate, wherein the opening is formed so as to penetrate the second insulating layer in the entire inner region of the frame-shaped portion in the thickness direction.
前記枠状部は、前記第2絶縁層の両面にそれぞれ形成され、そのうち一方の面側の前記枠状部は、反対面側の前記枠状部に比べて内側領域の面積が大きく、かつ前記一方の面側の内側領域が平面視において前記反対面側の内側領域を包含することを特徴とする請求項1記載の部品内蔵基板。   The frame-shaped portion is formed on both surfaces of the second insulating layer, respectively, and the frame-shaped portion on one surface side has a larger area of the inner region than the frame-shaped portion on the opposite surface side, and 2. The component built-in board according to claim 1, wherein an inner region on one surface side includes the inner region on the opposite surface side in a plan view. 第1絶縁層の一方の面に第1導電層が形成され、前記第1絶縁層を貫通し前記第1導電層から他方の面に至る層間導通部を有する第1の基板と、
前記層間導通部と接続される電子部品と、
第2絶縁層に第2導電層が形成され、前記第2絶縁層の前記電子部品を内蔵する位置に開口部が形成された第2の基板と、を少なくとも備えた部品内蔵基板の製造方法であって、
前記第2絶縁層に、前記第2導電層からなる平面視枠状の枠状部を形成し、前記枠状部の内側に位置する前記第2絶縁層にレーザ光を照射することにより、レーザ加工によって前記第2絶縁層を厚さ方向に貫通して前記開口部を形成する工程を含み、
前記枠状部の内側の前記第2絶縁層にレーザ光を照射して前記開口部を形成するにあたって、前記レーザ光を、少なくとも前記枠状部の内周縁を含む領域に照射することを特徴とする部品内蔵基板の製造方法。
A first substrate having a first conductive layer formed on one surface of the first insulating layer and having an interlayer conductive portion penetrating the first insulating layer and extending from the first conductive layer to the other surface;
An electronic component connected to the interlayer conductive portion;
And a second substrate having a second conductive layer formed on the second insulating layer and an opening formed at a position where the electronic component is embedded in the second insulating layer. There,
The second insulating layer is formed with a frame-like frame-like portion made of the second conductive layer in a plan view, and the second insulating layer positioned inside the frame-like portion is irradiated with laser light, thereby producing a laser. Forming the opening through the second insulating layer in the thickness direction by processing,
When forming the opening by irradiating the second insulating layer inside the frame-shaped portion with the laser beam, the laser beam is irradiated to a region including at least the inner periphery of the frame-shaped portion. A method for manufacturing a component-embedded substrate.
第1絶縁層の一方の面に第1導電層が形成され、前記第1絶縁層を貫通し前記第1導電層から他方の面に至る層間導通部を有する第1の基板と、
前記層間導通部と接続される電子部品と、
第2絶縁層に第2導電層が形成され、前記第2絶縁層の前記電子部品を内蔵する位置に開口部が形成された第2の基板と、を少なくとも備えた部品内蔵基板の製造方法であって、
前記第2絶縁層に、前記第2導電層からなる平面視枠状の枠状部を形成し、前記枠状部の内側に位置する前記第2絶縁層を、ウェットエッチングにより厚さ方向に貫通して前記開口部を形成する工程を含むことを特徴とする部品内蔵基板の製造方法。
A first substrate having a first conductive layer formed on one surface of the first insulating layer and having an interlayer conductive portion penetrating the first insulating layer and extending from the first conductive layer to the other surface;
An electronic component connected to the interlayer conductive portion;
And a second substrate having a second conductive layer formed on the second insulating layer and an opening formed at a position where the electronic component is embedded in the second insulating layer. There,
A frame-like frame-like portion made of the second conductive layer is formed in the second insulating layer, and the second insulating layer located inside the frame-like portion penetrates in the thickness direction by wet etching. Then, the manufacturing method of the component built-in board | substrate characterized by including the process of forming the said opening part.
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