JP2013042517A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To limit current flowing to primary sides of photo-couplers without mounting resistors for limiting the current flowing to the primary sides of the photo-couplers, on a circuit board.SOLUTION: Control ICs 11a to 11c incorporate resistors 17a to 17c which limit current flowing to primary sides of photo-couplers 21a to 21c respectively, and current that flows when transistors 16a to 16c turn on respectively is led to light emitting elements 22a to 22c through the resistors 17a to 17c to limit the current flowing to the primary sides of the photo-couplers 21a to 21c.

Description

The present invention relates to a semiconductor device, and is particularly suitable for application to a method of determining a signal detected by a sensor in a control IC and outputting the determination result to a photocoupler via a resistor.

When the signal detected by the sensor is determined in the control IC and the determination result is output to the photocoupler, the current flowing to the primary side of the photocoupler is limited via a resistor mounted on the circuit board. There is a method of outputting to a photocoupler.
FIG. 6 is a block diagram showing a schematic configuration of a conventional semiconductor device.
In FIG. 6, control ICs 41a to 41c include transistor drive circuits 12a to 12c that drive external power transistors, and external alarm detection circuits 13a that detect external alarms and stop the operations of the transistor drive circuits 12a to 12c, respectively. To 13c, operational amplifiers 14a to 14c for comparing signal levels detected by the sensors 1a to 1c with constant voltages, constant voltage sources 15a to 15c for generating constant voltages, and transistors for amplifying outputs of the operational amplifiers 14a to 14c, respectively. 16a to 16c are provided.

  The control ICs 41a to 41c include an external terminal T1 connected to the output terminals of the transistor drive circuits 12a to 12c, an external terminal T2 connected to the non-inverting input terminals of the operational amplifiers 14a to 14c, and transistor drive circuits 12a to 12c. An external terminal T3 connected to the power supply terminal 12c, an external terminal T4 connected to the collector side of the transistors 16a to 16c, and an external terminal T5 connected to the emitter side of the transistors 16a to 16c, respectively. The external terminals T1 to T5 can be formed in a semiconductor package that encloses the control ICs 41a to 41c.

The photocouplers 21a to 21c are provided with light emitting elements 22a to 22c such as light emitting diodes and light receiving elements 23a to 23c such as phototransistors.
Here, the non-inverting input terminals of the operational amplifiers 14a to 14c are connected to the sensors 1a to 1c, respectively, and the inverting input terminals of the operational amplifiers 14a to 14c are connected to the constant voltage sources 15a to 15c, respectively.

  The output terminals of the operational amplifiers 14a to 14c are connected to the bases of the transistors 16a to 16c, respectively, and the collectors of the transistors 16a to 16c are connected to the input terminals of the external alarm detection circuits 13a to 13c, respectively. Further, between the external terminals T5 and T4 of the control ICs 41a to 41c, power sources 24a to 24c, light emitting elements 22a to 22c, and resistors 42a to 42c are sequentially connected in series, respectively.

  Then, abnormalities and operating states of the power modules are detected by the sensors 1a to 1c, and signals detected by the sensors 1a to 1c are input to the non-inverting input terminals of the operational amplifiers 14a to 14c, respectively. When the signals detected by the sensors 1a to 1c are input to the non-inverting input terminals of the operational amplifiers 14a to 14c, the signals are respectively compared with the constant voltages generated by the constant voltage sources 15a to 15c. The comparison results are input to the bases of the transistors 16a to 16c, respectively.

When the signals detected by the sensors 1a to 1c exceed the constant voltages generated by the constant voltage sources 15a to 15c, the transistors 16a to 16c are turned on, and the resistors 42a to 42c are respectively connected. A current flows through the light emitting elements 22a to 22c. When a current flows through each of the light emitting elements 22a to 22c, the light emitting elements 22a to 22c emit light, and the light is received by the light receiving elements 23a to 23c, so that the light receiving elements 23a to 23c are turned on.
Further, the potentials at the subsequent stages of the resistors 42a to 42c are monitored by the external alarm detection circuits 13a to 13c, respectively. When the subsequent potentials of the resistors 42a to 42c reach a specified value, the external alarm detection circuits 13a to 13c stop the operations of the transistor drive circuits 12a to 12c, respectively.

FIG. 7 is a block diagram showing a schematic configuration when the semiconductor devices of FIG. 6 are connected in parallel.
In FIG. 7, when the control ICs 41a to 41c are connected in parallel to the power supply 24a, the power supply 24a, the light emitting element 22a, and the resistor 42a are sequentially and commonly connected in series between the external terminals T5 and T4 of the control ICs 41a to 41c.
When any of the signals detected by the sensors 1a to 1c exceeds the constant voltages generated by the constant voltage sources 15a to 15c, any of the transistors 16a to 16c corresponding to the sensors 1a to 1c. Is conducted, and a current flows to the light emitting element 22a through the resistor 42a. When a current flows through the light emitting element 22a, the light emitting element 22a emits light, and the light is received by the light receiving element 23a, so that the light receiving element 23a becomes conductive.

Further, the potential of the subsequent stage of the resistor 42a is monitored by the external alarm detection circuits 13a to 13c. When the potential at the subsequent stage of the resistor 42a reaches a specified value, the external alarm detection circuits 13a to 13c stop the operations of the transistor drive circuits 12a to 12c, respectively.
Further, for example, in Patent Document 1, the overcurrent protection unit detects the voltage across the current detection resistor provided at a predetermined position of the power conversion unit, and the current flowing through the power conversion unit is at a certain level. A method is disclosed in which an excessive current is prevented from flowing through the power conversion unit by sending a signal to the control unit when the value exceeds the value, and the control unit controls the power conversion unit.

JP-A-11-2899749

However, in the conventional semiconductor device, since the resistors 42a to 42c are mounted on the circuit board in order to limit the currents flowing to the primary sides of the photocouplers 21a to 21c, there is a problem that the mounting space is increased.
Further, when the resistors 42a to 42c are mounted on the circuit board, the metals such as silver and copper used for the resistors 42a to 42c are corroded in the use environment, and the reliability is lowered while being resistant to corrosion. When the resistors 42a to 42c are used, there is a problem that the cost is increased.
Therefore, an object of the present invention is to provide a semiconductor device capable of limiting the current flowing to the primary side of the photocoupler without mounting a resistor on the circuit board in order to limit the current flowing to the primary side of the photocoupler. It is to be.

  In order to solve the above-described problem, according to a semiconductor device according to claim 1, a semiconductor chip on which a determination circuit for determining an abnormality or an operating state of a power module based on a signal from a sensor is formed, and the semiconductor chip A resistor for limiting a current output from the determination circuit, a first external terminal connected to the resistor, and either a direct output from the determination circuit or an output from the resistor is selected. And a connection selection circuit for outputting to the outside.

  According to another aspect of the semiconductor device of the present invention, the first semiconductor chip on which the determination circuit for determining the abnormality or the operating state of the power module based on the signal from the sensor is formed, and the current output from the determination circuit A second semiconductor chip on which a resistor for limiting the resistance is formed, a first external terminal connected to the resistor, a mounting substrate on which the first semiconductor chip and the second semiconductor chip are mounted, and the determination circuit And a connection selection circuit for selecting one of the direct output and the output from the resistor and outputting the selected output to the outside.

  According to another aspect of the semiconductor device of the present invention, a semiconductor chip having a determination circuit for determining an abnormality or an operating state of the power module based on a signal from the sensor, and a semiconductor package in which the semiconductor chip is enclosed A resistor that limits the current output from the determination circuit, a first external terminal connected to the resistor, and either a direct output from the determination circuit or an output from the resistor is selected. And a connection selection circuit for outputting to the outside.

  According to another aspect of the semiconductor device of the present invention, the first semiconductor chip on which the determination circuit for determining the abnormality or the operating state of the power module based on the signal from the sensor is formed, and the first semiconductor chip are enclosed. A second semiconductor chip built in the semiconductor package and formed with a resistor for limiting the current output from the determination circuit; a first external terminal connected to the resistor; and a direct output from the determination circuit Alternatively, a connection selection circuit for selecting any one of the outputs from the resistors and outputting them to the outside is provided.

  As described above, according to the present invention, a resistor is formed on the circuit board to limit the current flowing to the primary side of the photocoupler by forming the resistor that limits the current output from the determination circuit in the semiconductor chip. Without mounting, the current flowing to the primary side of the photocoupler can be limited. Therefore, it is possible to determine the abnormality or operating state of the power module while preventing an increase in mounting space, and it is not necessary to use an expensive resistance having corrosion resistance, thereby preventing deterioration of reliability. However, the cost can be reduced, and the connection selection circuit can select a signal via the resistor and guide it to the external terminal.

1 is a block diagram showing a schematic configuration of a semiconductor device according to a first embodiment of the present invention. FIG. 2 is a block diagram showing a schematic configuration when the semiconductor devices of FIG. 1 are connected in parallel. It is a block diagram which shows schematic structure of the semiconductor device which concerns on 2nd Embodiment of this invention. FIG. 4 is a block diagram showing a schematic configuration when the semiconductor devices of FIG. 3 are connected in parallel. FIG. 4 is a circuit diagram showing a configuration example of a connection selection circuit 18a of FIG. It is a block diagram which shows schematic structure of the conventional semiconductor device. FIG. 7 is a block diagram showing a schematic configuration when the semiconductor devices of FIG. 6 are connected in parallel.

Hereinafter, a semiconductor device according to an embodiment of the present invention will be described with reference to the drawings.
FIG. 1 is a block diagram showing a schematic configuration of the semiconductor device according to the first embodiment of the present invention.
1, in addition to the configuration of the control ICs 41a to 41c of FIG. 6, resistors 17a to 17c for limiting the current flowing to the primary side of the photocouplers 21a to 21c are incorporated in the control ICs 11a to 11c, respectively. The resistors 17a to 17c may be built in a semiconductor package in which the control ICs 11a to 11c are enclosed, and the semiconductor package may be mounted on an IPM (intelligent power module) mounting board. Alternatively, the resistors 17a to 17c may be formed on a semiconductor chip on which the control ICs 11a to 11c are mounted, and the semiconductor chip may be mounted on an IPM mounting substrate.

Alternatively, the control ICs 11a to 11c and the resistors 17a to 17c may be formed on separate semiconductor chips, and these semiconductor chips may be mounted on an IPM mounting substrate. Alternatively, the control ICs 11a to 11c and the resistors 17a to 17c may be formed on separate semiconductor chips, and these semiconductor chips may be sealed in the same semiconductor package and then mounted on the IPM mounting substrate.
In addition, by forming the resistors 17a to 17c on the semiconductor chip using a material such as polysilicon, it becomes possible to reduce the size as compared with a resistor using a metal such as silver or copper, and to have corrosion resistance. Can be improved.

  In addition to the external terminals T1 to T5 of FIG. 6, the control ICs 11a to 11c are provided with external terminals T6 connected to the resistors 17a to 17c, respectively. As the external terminals T1 to T6, when the control ICs 11a to 11c and the resistors 17a to 17c are formed on the semiconductor chip, pad electrodes formed on the semiconductor chip can be used. Further, when the control ICs 11a to 11c and the resistors 17a to 17c are enclosed in the semiconductor package, the external terminals T1 to T6 can use lead terminals and bump electrodes formed in the semiconductor package.

Here, between the external terminals T5 and T6 of the control ICs 11a to 11c, the power sources 24a to 24c and the light emitting elements 22a to 22c are sequentially connected in series, respectively.
Then, abnormalities and operating states of the power modules are detected by the sensors 1a to 1c, and signals detected by the sensors 1a to 1c are input to the non-inverting input terminals of the operational amplifiers 14a to 14c, respectively. When the signals detected by the sensors 1a to 1c are input to the non-inverting input terminals of the operational amplifiers 14a to 14c, the signals are respectively compared with the constant voltages generated by the constant voltage sources 15a to 15c. The comparison results are input to the bases of the transistors 16a to 16c, respectively.

  When the signals detected by the sensors 1a to 1c exceed the constant voltages generated by the constant voltage sources 15a to 15c, the transistors 16a to 16c are turned on, and light is emitted through the resistors 17a to 17c, respectively. A current flows through the elements 22a to 22c. When a current flows through each of the light emitting elements 22a to 22c, the light emitting elements 22a to 22c emit light, and the light is received by the light receiving elements 23a to 23c, so that the light receiving elements 23a to 23c are turned on.

Further, the potentials at the subsequent stages of the resistors 17a to 17c are monitored by the external alarm detection circuits 13a to 13c, respectively. And if the electric potential of the latter stage of resistance 17a-17c reaches a regulation value, external alarm detection circuits 13a-13c will stop operation of transistor drive circuits 12a-12c, respectively.
This makes it possible to limit the current flowing to the primary side of the photocouplers 21a to 21c without mounting the resistors 17a to 17c on the circuit board in order to limit the current flowing to the primary side of the photocouplers 21a to 21c. Become. Therefore, it is possible to determine the abnormality or operating state of the power module while preventing an increase in mounting space, and it is not necessary to use an expensive resistance having corrosion resistance, thereby preventing deterioration of reliability. However, the cost can be reduced.

FIG. 2 is a block diagram showing a schematic configuration when the semiconductor devices of FIG. 1 are connected in parallel.
In FIG. 2, when the control ICs 11a to 11c are connected in parallel to the power supply 24a, the power supply 24a and the light emitting element 22a are sequentially connected in series between the external terminal T5 of the control ICs 11a to 11c and the external terminal T6 of the control IC 11a. The The external terminals T4 of the control ICs 11a to 11c are commonly connected.
When any of the signals detected by the sensors 1a to 1c exceeds the constant voltages generated by the constant voltage sources 15a to 15c, any of the transistors 16a to 16c corresponding to the sensors 1a to 1c. Is conducted, and a current flows to the light emitting element 22a through the resistor 17a. When a current flows through the light emitting element 22a, the light emitting element 22a emits light, and the light is received by the light receiving element 23a, so that the light receiving element 23a becomes conductive.

Further, the potential at the subsequent stage of the resistor 17a is monitored by the external alarm detection circuits 13a to 13c. When the potential at the subsequent stage of the resistor 17a reaches a specified value, the external alarm detection paths 13a to 13c stop the operations of the transistor drive circuits 12a to 12c, respectively.
Thereby, even when the resistors 17a to 17c are built in the control ICs 11a to 11c, the control ICs 11a to 11c can share the resistor 17a of the control IC 11a, and the control ICs 11a to 11c are connected in parallel to the power sources 24a to 24c. Even in this case, the resistance value for limiting the current flowing to the primary side of the photocoupler 21a can be optimized.

FIG. 3 is a block diagram showing a schematic configuration of a semiconductor device according to the second embodiment of the present invention.
3, in addition to the configuration of the control ICs 11a to 11c in FIG. 1, connection selection circuits 18a to 18c are built in the control ICs 31a to 31c, respectively. The connection selection circuits 18a to 18c can select either the signal from the collector of the transistors 16a to 16c or the signal via the resistors 17a to 17c and guide the selected signal to the external terminal T6.
When the control ICs 31a to 31c are respectively connected to the photocouplers 21a to 21c, the connection selection circuits 18a to 18c can select a signal that has passed through the resistors 17a to 17c and guide it to the external terminal T6.

When the signals detected by the sensors 1a to 1c exceed the constant voltages generated by the constant voltage sources 15a to 15c, the transistors 16a to 16c are turned on, and light is emitted through the resistors 17a to 17c, respectively. A current flows through the elements 22a to 22c. When a current flows through each of the light emitting elements 22a to 22c, the light emitting elements 22a to 22c emit light, and the light is received by the light receiving elements 23a to 23c, so that the light receiving elements 23a to 23c are turned on.
Further, the potentials at the subsequent stages of the resistors 17a to 17c are monitored by the external alarm detection circuits 13a to 13c, respectively. And if the electric potential of the latter stage of resistance 17a-17c reaches a regulation value, external alarm detection circuits 13a-13c will stop operation of transistor drive circuits 12a-12c, respectively.

FIG. 4 is a block diagram showing a schematic configuration when the semiconductor devices of FIG. 3 are connected in parallel.
In FIG. 4, when the control ICs 31a to 31c are connected in parallel to the power supply 24a, the power supply 24a and the light emitting element 22a are sequentially and commonly connected in series between the external terminals T5 and T6 of the control ICs 31a to 31c. Further, when the control ICs 11a to 11c are connected in parallel to the power supply 24a, the connection selection circuits 18a to 18c can select the signals that have passed through the resistors 17a to 17c, respectively, and guide them to the external terminals T6 of the control ICs 11a to 11c, respectively. it can.

When any of the signals detected by the sensors 1a to 1c exceeds the constant voltages generated by the constant voltage sources 15a to 15c, any of the transistors 16a to 16c corresponding to the sensors 1a to 1c. Is conducted, and a current flows to the light emitting element 22a through the resistor 17a. When a current flows through the light emitting element 22a, the light emitting element 22a emits light, and the light is received by the light receiving element 23a, so that the light receiving element 23a becomes conductive.
Further, the potential at the subsequent stage of the resistor 17a is monitored by the external alarm detection circuits 13a to 13c. When the potential at the subsequent stage of the resistor 17a reaches a specified value, the external alarm detection circuits 13a to 13c stop the operations of the transistor drive circuits 12a to 12c, respectively.

  Thereby, even when the resistors 17a to 17c are built in the control ICs 31a to 31c, the control ICs 31a to 31c can share the resistor 17a of the control IC 11a without providing the external terminal T4 of FIG. . For this reason, even when the control ICs 11a to 11c are connected in parallel to the power sources 24a to 24c, it is possible to optimize the resistance value for limiting the current flowing to the primary side of the photocoupler 21a and to control the control IC 31a. The number of external terminals of ~ 31c can be reduced.

FIG. 5 is a circuit diagram showing a configuration example of the connection selection circuit 18a of FIG.
In FIG. 5, the output terminals of the EPROM 43 are connected to the gates of the field effect transistors 41 and 42, and the drains of the field effect transistors 41 and 42 are connected to the external terminal T6. The source of the field effect transistor 41 is connected to the collector of the transistor 16a of FIG. 4 via the resistor 17a, and the source of the field effect transistor 42 is directly connected to the collector of the transistor 16a of FIG.

When the signal from the collector of the transistor 16a is selected by the connection selection circuit 18a, data for turning off the field effect transistor 41 and turning on the field effect transistor 42 can be written in the EPROM 43. On the other hand, when the connection selection circuit 18a selects a signal that passes through the resistor 17a, data for turning on the field effect transistor 41 and turning off the field effect transistor 42 can be written in the EPROM 43.
The other connection selection circuits 18b and 18c can have the same configuration.

1a to 1c sensor 11a to 11c, 31a to 31c control IC
12a to 12c Transistor drive circuit 13a to 13c External alarm detection circuit 14a to 14c Operational amplifier 15a to 15c Constant voltage source 16a to 16c Transistors 17a to 17c, 44 Resistors 18a to 18c Connection selection circuit 21a to 21c Photocoupler 22a to 22c Light emitting element 23a -23c Light receiving element 24a-24c Power supply 41, 42 Field effect transistor 43 EPROM

Claims (4)

A semiconductor chip on which a determination circuit for determining an abnormality or operating state of the power module based on a signal from the sensor is formed;
A resistor formed on the semiconductor chip and limiting a current output from the determination circuit;
A first external terminal connected to the resistor;
A semiconductor device comprising a connection selection circuit that selects either the direct output from the determination circuit or the output from the resistor and outputs the selected output to the outside. A first semiconductor chip formed with a determination circuit for determining an abnormality or an operating state of the power module based on a signal from the sensor;
A second semiconductor chip formed with a resistor for limiting the current output from the determination circuit;
A first external terminal connected to the resistor;
A mounting substrate on which the first semiconductor chip and the second semiconductor chip are mounted;
A semiconductor device comprising a connection selection circuit that selects either the direct output from the determination circuit or the output from the resistor and outputs the selected output to the outside. A semiconductor chip on which a determination circuit for determining an abnormality or operating state of the power module based on a signal from the sensor is formed;
A resistor embedded in a semiconductor package in which the semiconductor chip is enclosed, and limiting a current output from the determination circuit;
A first external terminal connected to the resistor;
A semiconductor device comprising a connection selection circuit that selects either the direct output from the determination circuit or the output from the resistor and outputs the selected output to the outside. A first semiconductor chip formed with a determination circuit for determining an abnormality or an operating state of the power module based on a signal from the sensor;
A second semiconductor chip formed in a semiconductor package encapsulating the first semiconductor chip and formed with a resistor for limiting a current output from the determination circuit;
A first external terminal connected to the resistor;
A semiconductor device comprising a connection selection circuit that selects either the direct output from the determination circuit or the output from the resistor and outputs the selected output to the outside.

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