JP2006344721A - Semiconductor apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce variations in forward voltage VF of a temperature-sensitive diode that occur for each semiconductor chip. <P>SOLUTION: The semiconductor apparatus is provided with a plurality of resistors 31-34 and a wiring 35 respectively connected with each other while being branched from the temperature-sensitive diode 20, pads 41-45 provided respectively corresponding to a plurality of the resistors 31-34 and the wiring 35, and a pad 10 provided to the side opposite to a plurality of the resistors 31-34 and the wiring 35 in the temperature-sensitive diode 20. A plurality of paths are composed including the temperature-sensitive diodes 20 between the pad 10 and the pads 41-45. Any one of a plurality of the resistors 31-34 or the wiring 35 is selected so that a temperature between the pad 10 and the pads 41-45 is within a desired range. The path including the selected resistor or the wiring is used. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a semiconductor device that is mounted on a semiconductor chip and detects the temperature of the semiconductor chip.

  Conventionally, for example, when a motor such as an electric vehicle is driven by an inverter device, when an overcurrent flows through an inverter circuit configured by connecting a plurality of semiconductor elements in parallel, the temperature of the semiconductor elements rises and the semiconductor elements are destroyed. There is a risk of reaching. For this reason, it is necessary to protect the semiconductor element by cutting off the semiconductor element before the semiconductor element is destroyed. Thus, a temperature detection device has been proposed in which the temperature of each semiconductor element is detected and the semiconductor element is protected (see, for example, Patent Document 1).

  In such a temperature detection device, in order to detect the temperature of each semiconductor element, a temperature detection diode (hereinafter referred to as a temperature sensitive diode) is provided in the semiconductor element. The temperature sensitive diodes are arranged in the vicinity of the semiconductor element, and resistors are connected in series to form a temperature detecting element. This resistor is used to prevent the current from the constant current source from flowing in a concentrated manner to the temperature detection element arranged in the semiconductor element even when one of the plurality of semiconductor elements becomes high temperature. It is. A constant current is supplied from the constant current source to the temperature detecting element.

  In addition, the temperature detection device is provided with a temperature detection circuit that detects the temperature of the temperature sensing diode by utilizing the fact that the forward voltage of the temperature sensing diode changes according to the temperature. Specifically, the voltage at the connection point of each temperature detection element, that is, the output voltage T of the temperature detection element connected in parallel, is input to the temperature detection circuit, and this output voltage T is compared with a reference voltage indicating a predetermined temperature. . When the output voltage T is determined to exceed the reference voltage, a signal indicating the temperature of the semiconductor element is output from the temperature detection circuit.

With the configuration and operation as described above, it is possible to perform processing in which the semiconductor element is not destroyed according to the temperature of the semiconductor element.
JP 2001-133330 A

  However, in the above-described conventional technology, there are variations in the forward voltage VF of each temperature sensing diode among a plurality of products, but the resistance value of the resistor connected in series with each temperature sensing diode is the same for each product. Since the value is fixed, the resistance value of each resistor of each product cannot be adjusted according to the variation in the forward voltage VF of each temperature sensitive diode. This causes the following problems.

  That is, when the forward voltage VF of the temperature sensing diode is 0.6 V, for example, even if the temperature of the semiconductor element is 100 ° C., for example, the forward voltage VF of each temperature sensing diode varies (see FIG. 2). . For this reason, even if the forward voltage VF of each temperature-sensitive diode is 0.6 V, the detected temperature of the semiconductor element will vary by, for example, 100 ± 25 ° C.

  As described above, the temperature of the semiconductor element is detected according to the voltage value of the forward voltage VF of the temperature sensitive diode. Therefore, for each of the plurality of products, the semiconductor element is set to stop operating when the forward voltage VF of the temperature sensitive diode is 0.6 V, for example, when the temperature of the semiconductor element reaches 100 ° C. However, even if the temperature of the semiconductor element is 75 ° C., the forward voltage VF of any one of the temperature-sensitive diodes becomes 0.6V. The operation stops when the temperature reaches 75 ° C. Further, in a temperature sensitive diode installed in another product, when the temperature of the semiconductor element is 110 ° C. and the forward voltage VF becomes 0.6V, for example, the operation may stop at the temperature of the semiconductor element of 110 ° C.

  As described above, in the conventional technology, due to variations in the forward voltage VF of each temperature-sensitive diode, the temperature at which the semiconductor element stops operating differs depending on the plurality of products each equipped with the semiconductor element. It was not possible to stop the operation of each of the semiconductor elements at the temperature of.

  It is conceivable to provide a resistor outside the semiconductor element and adjust the resistance value by changing the resistor. However, it is not preferable because a step of measuring the characteristics of the semiconductor element again to determine the resistance value of the resistor after the combination of the semiconductor element and the circuit and changing the resistance is increased.

  In view of the above points, the present invention reduces variations in the forward voltage VF of a temperature-sensitive diode for each semiconductor device in a semiconductor device that detects the temperature of the semiconductor element according to the value of the forward voltage of the temperature-sensitive diode. With the goal.

  In order to achieve the above object, the invention according to claim 1 is provided with resistors (31 to 34, 36a to 36c, 37a to 37c, 38a to 38c, 210, 220) connected in series to the temperature detecting element. The resistance value of the resistor is adjusted so that the voltage between both ends of the temperature detecting element and the resistor is within a desired range.

  In this manner, the resistor is connected in series to the temperature detection element, and the resistance value is adjusted so that the voltage between the temperature detection element and both ends of the resistance is within a desired range. Thereby, in each semiconductor device, the voltage between both ends of the temperature detection element and the resistor can be set to a common value, and as a result, variations in voltage in each semiconductor device can be reduced.

  In the invention according to claim 2, a plurality of resistors (31 to 34, 36a to 36c, 37a to 37c, 38a to 38c, 210, 220) connected in series to the temperature detection element are provided, and the temperature detection element One of the plurality of resistors is selected so that a voltage between both ends of the plurality of resistors falls within a desired range.

  In this way, a plurality of resistors are provided, and a resistor is selected such that the voltage between the temperature detection element and the plurality of resistors is within a desired range. Thereby, in each semiconductor device, the voltage between both ends of the temperature detection element and the plurality of resistors can be set to a common value, and as a result, voltage variation in each semiconductor device can be reduced.

  In the third aspect of the present invention, a plurality of pads (10, 11, 41 to 45, 46, 47a to 47c, 48a to 48c, 49a to 49a) are provided on a path constituted by the temperature detection element and the plurality of resistors. 49d, 81-83), and any one of these pads is used to output the voltage between the selected resistor and the temperature detecting element to the outside. It is said.

  Thus, a plurality of pads are provided. Thereby, the voltage between both ends of the temperature detection element and the selected resistor can be output to the outside.

  In the invention according to claim 4, any one of the plurality of resistors (31 to 34) and the wiring (35) is selected so that the voltage between the pads (10, 41 to 45) is within a desired range. A path including the selected resistor or wiring is used.

  As described above, a plurality of resistors and wirings are provided in the semiconductor device, and a resistor or wiring that selects a voltage between pads within a desired range is selected. Thereby, even if there is variation in the output voltage of the temperature detection element in each of the plurality of semiconductor devices, the voltage between the pads in each semiconductor device can be set to a common value. Therefore, variations in the output voltage of the temperature detection element can be reduced in a plurality of semiconductor devices. In addition, it is only necessary to select a resistor having a desired voltage value between the pads from among a plurality of resistors and wirings, so that the voltage value can be adjusted by each individual semiconductor device. be able to.

  In the invention according to claim 5, in the path including the unselected resistance or wiring among the plurality of paths, the unselected resistance or wiring is electrically disconnected from the temperature detecting element. It is characterized by being.

  In this manner, the resistor or wiring that is not selected is electrically disconnected from the temperature detection element. Thereby, it is possible to prevent the resistance and wiring left without being selected from acting as an antenna and picking up electromagnetic noise. Accordingly, the influence of electromagnetic noise on the semiconductor device and the external circuit electrically connected to the semiconductor device can be reduced.

  The invention according to claim 6 is characterized in that the plurality of resistors are made of CrSi.

  Thus, the plurality of resistors are made of CrSi. Since this CrSi is a material having a small temperature characteristic change, a desired resistance value can always be realized regardless of the temperature of the semiconductor device. Therefore, temperature accuracy can be improved.

  In the invention described in claim 7, a thin film resistor (39) connected in series to the temperature detecting element (20) is provided, so that the voltage between the temperature detecting element and the thin film resistor falls within a desired range. In addition, the thin film resistor is trimmed.

  In this manner, the voltage output of the temperature detection element is adjusted by trimming the thin film resistor. Thereby, even if there is variation in the output voltage of the temperature detection element in each semiconductor device, the output voltage can be adjusted within a desired range by trimming the thin film resistors. Therefore, variations in the output voltage of the temperature detection element in each semiconductor device can be reduced.

  The invention according to claim 8 is characterized in that the thin film resistor is made of CrSi.

  Thus, the thin film resistor is made of CrSi. Thus, similarly to the fifth aspect, the thin film resistor can be used as a resistor having no temperature characteristic change, and the temperature accuracy can be improved.

  According to the ninth aspect of the present invention, resistances (31 to 34, 36a to 36c, 37a to 37c, 38a to 38c, 210, and 220) connected in series to the temperature detection element are provided, and the resistance is temperature detection. The resistance value of the resistor is adjusted (or selected from a plurality of resistors) so that the voltage between both ends of the temperature detecting element and the resistor is within a desired range. It is characterized by becoming.

  Thus, the resistance is adjusted and selected so that the voltage between the temperature detection element and the resistance is within a desired range. Thereby, in each semiconductor device, the voltage between both ends of the temperature detection element and the resistor can be set to a common value, and as a result, variations in voltage in each semiconductor device can be reduced.

  Further, a resistor is disposed in the vicinity of the temperature detection element. As a result, the temperature of the resistor becomes the same as that of the temperature detecting element, temperature adjustment including the temperature characteristic of the resistor can be performed, and the detection accuracy can be further improved.

  In addition, the code | symbol in the bracket | parenthesis of each said means shows the correspondence with the specific means as described in embodiment mentioned later.

(First embodiment)
Hereinafter, a first embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a schematic front view of a semiconductor chip as a semiconductor device according to an embodiment of the present invention. As shown in this figure, the semiconductor chip S1 includes a temperature detection unit 100.

  The semiconductor chip S1 is formed by, for example, a plurality of semiconductor elements formed on a silicon substrate, and the silicon substrate is diced and divided into individual chips. In the present embodiment, a semiconductor element is formed in a portion other than the temperature detection unit 100 in the semiconductor chip S1. As the semiconductor elements, transistors such as IGBTs, diodes, and semiconductor elements that generate heat such as ICs are employed.

  The temperature detection unit 100 has a function of detecting the temperature of the semiconductor chip S1, and includes the pad 10, the temperature sensitive diode 20, the first to fourth resistors 31 to 34, the wiring 35, and the pads 41 to 45. And is configured.

  The pad 10 is a bonding pad provided on the cathode side of the temperature sensitive diode 20. As such a pad 10, for example, Al (aluminum) is employed.

  The temperature sensitive diode 20 outputs a voltage corresponding to the temperature, that is, the value of the forward voltage VF changes, and outputs the forward voltage VF corresponding to the heat generated by the operation of the semiconductor chip S1. To do. Since it is known that the heat generated by the operation of the semiconductor chip S1 is the highest when the heat is concentrated on the central portion of the semiconductor chip S1, the temperature sensitive diode 10 is positioned at the central portion of the semiconductor chip S1. Placed in.

  As shown in FIG. 1, two temperature sensitive diodes 20 are connected in series, and each temperature sensitive diode 20 is built in the semiconductor chip S1 by a known semiconductor manufacturing technique. In the present embodiment, the standard of the forward voltage VF of the temperature sensitive diode 20 is, for example, 900 to 1000 mV. The temperature sensitive diode 20 corresponds to the temperature detecting element of the present invention.

  The first to fourth resistors 31 to 34 and the wiring 35 are for adjusting the value of the forward voltage VF of the temperature sensitive diode 20 to a common value for each semiconductor chip S1 (product). Built in S1. Each of the resistors 31 to 34 and the wiring 35 is connected to the anode side of the temperature-sensitive diode 20 which is branched and connected to the outer edge portion of the semiconductor chip S1. Further, as each of the resistors 31 to 34, CrSi (chromium silicon), polysilicon, diffused resistor, or the like having a small temperature characteristic change is used.

  The resistance values of the resistors 31 to 34 are different from each other, the resistance value of the first resistor 31 is 400Ω, the resistance value of the second resistor 32 is 300Ω, the resistance value of the third resistor 33 is 200Ω, and The resistance value of the resistor 34 is 100Ω. The resistance value of the wiring 35 is almost negligible. In the present embodiment, any one of the resistors 31 to 34 and the wiring 35 is selected and used. This will be described in detail later.

  Each of these resistors 31 to 34 and the wiring 35 constitute a path including the temperature sensitive diode 20. That is, the temperature detection unit 100 is provided with a plurality of paths, and the optimum path is used from among the paths. The optimum path means that the forward voltage VF of the temperature-sensitive diode 20 is within a desired range in each path.

  The pads 41 to 45 are bonding pads connected to the first to fourth resistors 31 to 34 and the wiring 35, respectively. These pads 41 to 45 are made of Al, like the pad 10. The voltage value between the pad 10 and any one of the pads 41 to 45 is detected by an external circuit, and the temperature of the semiconductor chip S1 is detected.

  In the temperature detection unit 100, the constituent elements 10, 20, 31 to 35, and 41 to 45 are electrically connected to each other by Al wiring formed by patterning on the semiconductor chip S1.

  The above is the configuration of the semiconductor chip S1 according to the present embodiment.

  Next, a method for reducing the variation by adjusting the variation in the forward voltage VF of each temperature-sensitive diode 20 provided in the plurality of semiconductor chips S1 for each semiconductor chip S1 will be described.

  First, the temperature characteristics of the temperature sensitive diode 20 will be described. FIG. 2 is a diagram showing the correlation between the temperature and the forward voltage VF of the temperature sensitive diode 20. As shown in this figure, the relationship between the forward voltage VF and the temperature is proportional, and the forward voltage VF of the temperature sensitive diode 20 decreases as the temperature received by the temperature sensitive diode 20 increases. The relationship shown in FIG. 2 is a characteristic for one temperature-sensitive diode 20. In other words. The total forward voltage VF when a plurality of temperature sensitive diodes 20 are connected in series is a multiple of the value.

  For example, when the temperature received by the temperature sensitive diode 20 is 25 ° C., the forward voltage VF of the temperature sensitive diode 20 is, for example, 0.7V. However, when the temperature characteristics of the plurality of temperature sensitive diodes 20 are examined, as shown in FIG. 2, the forward voltage VF of each temperature sensitive diode 20 is centered at 0.7V while the temperature sensitive diode 20 is 25 ° C. It is scattered.

  In other words, for example, a variation of ± 25 ° C. occurs with respect to the forward voltage VF of the temperature sensitive diode 20. Thereby, for example, when the temperature received by the temperature sensitive diode 20 is 100 ° C., if the forward voltage VF becomes 0.6V, a certain temperature sensitive diode 20 becomes 75 ° C. and the forward voltage VF becomes 0.6V, In addition, a certain temperature-sensitive diode 20 has a forward voltage VF of 0.6 V at 125 ° C.

  Thus, if the forward voltage VF varies according to each temperature-sensitive diode 20, the desired forward voltage VF is reached at a low temperature. That is, when detecting the temperature received by the temperature sensitive diode 20 by monitoring the forward voltage VF of the temperature sensitive diode 20, even if the forward voltage VF of the temperature sensitive diode 20 becomes a desired voltage value, the voltage The temperature for the value may be lower than the target temperature.

  Therefore, the forward voltage VF of each temperature sensitive diode 20 is aligned with the line 50 formed by the maximum value of the forward voltage VF for each temperature as shown by the arrows in FIG. Variations in the direction voltage VF are eliminated so that each temperature-sensitive diode 20 has a common temperature characteristic. The adjustment of the forward voltage VF so that its value increases will be described in detail below. However, by connecting a resistor in series with the temperature-sensitive diode 20, the voltage corresponding to the resistance value of the resistor can be sequentially increased. This is because it can be added to the direction voltage VF and the forward voltage VF can be easily adjusted.

  Therefore, in this embodiment, since the standard of the forward voltage VF of the temperature sensitive diode 20 is, for example, 900 to 1000 mV as described above, each semiconductor chip S1 is provided so that the maximum value of the forward voltage VF is 1000 mV. The forward voltage VF of each temperature sensitive diode 20 of the temperature detecting unit 100 is adjusted.

  Hereinafter, a method for adjusting the forward voltage VF of each temperature-sensitive diode 20 will be described with reference to FIGS. 3 and 4. FIG. 3 is a circuit diagram for adjusting the forward voltage VF of the temperature sensitive diode 20 by the constant current method.

  As shown in FIG. 3, the cathode side of the temperature sensitive diode 20 is connected to the ground, and the current source 60 is connected to each of the pads 41 to 41 corresponding to the first to fourth resistors 31 to 34 and the wiring 35 of the semiconductor chip S1, respectively. 45 is connected. That is, the connection point A shown in FIG. 3 corresponds to any one of the pads 41 to 45. A voltage between the pad 10 and any one of the pads 41 to 45 is detected by an external circuit.

  FIG. 3 schematically shows a plurality of transistors 70 formed on the semiconductor chip S1. The gate (G), emitter (E), and collector (C) of the transistor 70 are connected to an external circuit. The diode 71 connected between the emitter and the collector is not formed in the semiconductor chip S1, but is formed in an external circuit, and is for protecting the transistor 71.

  In the circuit configuration described above, the forward voltage VF of each temperature sensitive diode 20 is adjusted. First, as described above, the forward voltage VF of each temperature-sensitive diode 20 is 900 to 1000 mV. In this embodiment, the forward voltage VF of each temperature-sensitive diode 20 is 980 to 1000 mV (that is, 990 ± 10 mV) with respect to the forward voltage VF having such a width. This is shown in FIG. FIG. 4 shows how the forward voltage VF of each temperature-sensitive diode 20 is adjusted.

  As shown in FIG. 4, since the forward voltage VF of each temperature-sensitive diode 20 is 900 to 1000 mV, the forward voltage VF is adjusted to a narrow range of 980 to 1000 mV. For this reason, when the forward voltage VF is not in the range of 980 to 1000 mV, the first to fourth resistors 31 to 34 are connected in series to the temperature sensitive diode 20 and a voltage less than the above range is added.

  For example, when the forward voltage VF of the temperature sensitive diode 20 is in the range of 900 to 920 mV, the forward voltage VF is set to 980 to 1000 mV by connecting a resistor that generates a voltage of 80 mV in series to the temperature sensitive diode 20. Can be adjusted within the range. Similarly, when the forward voltage VF of the temperature sensitive diode 20 is in the range of 920 to 940 mV, 940 to 960 mV, and 960 to 980 mV, resistors that respectively generate 60 mV, 40 mV, and 20 mV are connected in series to the temperature sensitive diode 20. You should do it.

  On the other hand, when the forward voltage VF is in the range of 980 to 1000 mV, it is not necessary to connect a resistor, so the wiring 35 is connected in series to the temperature sensitive diode 20.

  Specifically, the forward voltage VF is adjusted as follows under a predetermined temperature environment. First, the semiconductor chip S1 shown in FIG. 1 is prepared, and the pad 10 is grounded. Further, a current source 60 for operating the temperature sensitive diode 20 is connected to the pad 41, for example. Then, the voltage between the pad 10 and the pad 41 is measured. When the measured voltage value is not within the range of 980 to 1000 mV, the current source 60 is connected to the pad 42 and the voltage value between the pad 10 and the pad 42 is measured. As described above, when the value of the forward voltage VF is not within the above range, the current source 60 is sequentially connected to the pads 41 to 45, and the first voltage VF is within the range of 980 to 1000 mV. Any one of the fourth resistors 31 to 34 and the wiring 35 is selected. That is, a path is formed by the selected resistor or wiring and the temperature sensitive diode 20.

  In the same manner as described above, any one of the first to fourth resistors 31 to 34 and the wiring 35 so that the forward voltage VF of the temperature sensitive diode 20 is within the range of 980 to 1000 mV for the plurality of semiconductor chips S1. Will be selected. As a result, even if there is a variation in the forward voltage VF of each temperature-sensitive diode 20 in the plurality of semiconductor chips S1, the variation can be reduced in each semiconductor chip S1, and the common forward voltage VF for each semiconductor chip S1. Value.

  Thus, each of the semiconductor chips S1 in which any one of the resistors 31 to 34 and the wiring 35 is selected is mounted on the circuit board, and the electrical circuit formed on the circuit board and the selected one of the pads 41 to 45 and the pad 10 and 10 respectively. In addition, Al or Au (gold) is adopted for the wire used for wire bonding.

  As described above, in the present embodiment, the plurality of resistors 31 to 34 and the wiring 35 are provided in the semiconductor chip S1, and among these, the voltage between the pads 10, 41 to 45 is within a desired range. Select resistor or wiring. Thereby, in each semiconductor chip S1, the voltage between the temperature-sensitive diode 20 and the selected resistor or wiring can be set to a common value, and as a result, the forward voltage of the temperature-sensitive diode 20 in each semiconductor chip S1. Variations in VF can be reduced.

  Further, since the plurality of pads 10, 41 to 45 are provided, the voltage between the temperature sensitive diode 20 and the selected resistor or wiring can be easily output to the outside.

  Furthermore, since only a voltage having a desired voltage value between the pads 10, 41 to 45 is selected from the plurality of resistors 31 to 34 and the wiring 35, the forward voltage VF can be adjusted. It can be made by individual semiconductor device chip S1.

  In this embodiment, the plurality of resistors 31 to 34 are composed of CrSi whose temperature characteristics change. Thereby, a desired resistance value can always be realized regardless of the temperature of the semiconductor chip S1. Therefore, temperature accuracy can be improved.

(Second Embodiment)
In the present embodiment, only different parts from the first embodiment will be described. The present embodiment is different from the first embodiment in that a method of selecting an optimal one of the first to fourth resistors 31 to 34 and the wiring 35 is a constant voltage method. In the drawings used in the present embodiment, parts that are the same or equivalent to the components shown in the drawings used in the first embodiment are denoted by the same reference numerals for the sake of simplicity. is there.

  FIG. 5 shows a circuit diagram for adjusting the forward voltage VF of the temperature sensitive diode 20 by the constant voltage method. As shown in this figure, in the constant voltage method, a predetermined voltage VCC is applied to any one of the first to fourth resistors 31 to 34. The voltage value at the connection point A between the first to fourth resistors 31 to 34 and the wiring 35 and the anode side of the temperature-sensitive diode 20 is detected by an external circuit. That is, the connection point B shown in FIG. 5 corresponds to the potential of the pad 45 shown in FIG.

  In such a circuit configuration, when the applied voltage VCC is applied to any one of the resistors 31 to 34, the current IF flows, and the voltage between the connection point B (that is, the pad 45) and the pad 10 is detected. Is done. Then, any one of the first to fourth resistors 31 to 34 is selected so that the forward voltage VF of the temperature sensitive diode 20 is in the range of 980 to 1000 mV. If none of the resistors 31 to 34 is applied, the voltage between the pad 45 and the pad 10 is detected, and if the voltage value is within the above range, the wiring 35 is selected.

  As described above, even by the constant voltage method, an optimum one can be selected from the resistors 31 to 35 and the wiring 35, and variation in the forward voltage VF of the temperature sensitive diode 20 of each semiconductor chip S1 is reduced. be able to.

(Third embodiment)
In the present embodiment, only different parts from the first embodiment will be described. In the present embodiment, in the semiconductor chip, a plurality of resistors connected to the anode side of the temperature-sensitive diode 20 are connected in series and one pad is connected to each resistor. Different. In the drawings used in the present embodiment, parts that are the same or equivalent to the components shown in the drawings used in the first embodiment are denoted by the same reference numerals for the sake of simplicity. is there.

  FIG. 6 is a schematic front view of a semiconductor chip according to the third embodiment of the present invention. As shown in this figure, a plurality of resistors 36a to 36c are connected to the anode side of the temperature sensitive diode 20 in the semiconductor chip S2. These resistors 36 a to 36 c are each configured in a ladder shape and connected to the pad 46.

  Then, for example, a portion marked with “x” in FIG. 6 is trimmed so that the voltage value between the pad 46 and the pad 10 falls within the range shown in the first embodiment. Is done. In this way, the voltage between the pad 46 and the pad 10, that is, the forward voltage VF of the temperature sensitive diode 20, may be adjusted by trimming the wiring connecting the resistors 36a to 36c. As described above, an optimum route can be configured.

(Fourth embodiment)
In the present embodiment, only different parts from the first embodiment will be described. This embodiment is different from the first embodiment in that after any one of the resistors and wirings is selected, a resistor that is not used plays the role of an antenna and does not pick up electromagnetic noise. In the drawings used in the present embodiment, parts that are the same or equivalent to the components shown in the drawings used in the first embodiment are denoted by the same reference numerals for the sake of simplicity. is there.

  FIG. 7 is a diagram illustrating a state in which a part of the wiring connecting the resistors 31 to 34 formed in the semiconductor chip S1 is cut in the fourth embodiment. As shown in this figure, for example, when the fourth resistor 34 is connected in series to the temperature sensitive diode 20, the first to third resistors 31 to 33 are not used thereafter. If these first to third resistors 31 to 33 remain connected to the fourth resistor 34, the resistors 31 to 34 that are not used serve as antennas, pick up electromagnetic noise, and between the pads 44 and 10. May affect the circuit.

  Therefore, in the present embodiment, the resistors 31 to 33 that are not used are made independent so as not to affect the circuit including the temperature sensitive diode 20. Therefore, as shown in FIG. 7, for example, the portion of the wiring indicated by “x” is cut by trimming, for example. Thus, the antenna functions of the resistors 31 to 33 that are not used can be prevented. Thus, you may perform the process which removes the influence of the resistors 31-33 which are not used.

  As described above, the present embodiment is characterized in that a resistor or wiring that is not selected is electrically disconnected from the temperature sensitive diode 20. As a result, it is possible to prevent the resistance and wiring left without being selected from acting as an antenna and picking up electromagnetic noise, and as a result, an external circuit electrically connected to the semiconductor device or the semiconductor device. The influence of electromagnetic noise on the can be reduced. As described above, it is possible to reduce the influence of unnecessary routes.

(Fifth embodiment)
In the present embodiment, only different portions from the above embodiment will be described. In this embodiment, a circuit including the temperature sensing diode 20 and a circuit including a resistor for adjusting the forward voltage VF of the temperature sensing diode 20 are provided independently, and only the optimum resistance is connected by a wire. This is different from the above embodiment. In the drawings used in the present embodiment, parts that are the same or equivalent to the components shown in the drawings used in the first embodiment are denoted by the same reference numerals for the sake of simplicity. is there.

  FIG. 8 is a schematic front view of a semiconductor chip according to the fifth embodiment of the present invention. As shown in this figure, the semiconductor chip S3 includes pads 10 and 11 provided at both ends of the temperature sensitive diode 20, a plurality of resistors 37a to 37c having different resistance values, and both ends of the resistors 37a to 37c. The pads 47a to 47c and 48a to 48c are connected to each other.

  In the semiconductor chip S3 having such a configuration, optimal resistors 37a to 37c are selected in order to adjust the forward voltage VF of the temperature sensitive diode 20 as in the above embodiment. In the present embodiment, for example, it is assumed that the resistor 37b is selected. In such a case, the pad 11 and the pad 47b are wire-bonded, and the pad 48b is wire-bonded to the external circuit. This eliminates the need to consider the effects of noise due to unused resistors. As described above, a structure in which only the resistor to be used is wire-bonded may be used. As described above, the path including the optimum resistance is selected and connected to the path including the temperature-sensitive diode 20, thereby forming a path where the forward voltage VF of the temperature-sensitive diode 20 is within a desired range. Can do.

(Sixth embodiment)
In the present embodiment, only different portions from the above embodiment will be described. This embodiment is different from the above embodiment in that resistors and pads are alternately connected in series on the anode side of the temperature-sensitive diode 20. In the drawings used in the present embodiment, parts that are the same or equivalent to the components shown in the drawings used in the first embodiment are denoted by the same reference numerals for the sake of simplicity. is there.

  FIG. 9 is a schematic front view of a semiconductor chip according to the sixth embodiment of the present invention. As shown in this figure, in the semiconductor chip S4, a plurality of pads 49a to 49d and a plurality of resistors 38a to 38c are alternately connected in series on the anode side of the temperature sensitive diode 20.

  In such a structure, when an optimum resistor for adjusting the forward voltage VF of the temperature-sensitive diode 20 is selected as in the above embodiment, the pad connected to the resistor is wire-bonded to an external circuit. For example, when the combined resistance of the resistor 38a and the resistor 38b is selected, the pad 49b and the pad 10 are wire-bonded to the external circuit. Thus, the resistors 38a to 38c and the pads 49a to 49d may be connected in series. As described above, it is possible to select a path for adjusting the forward voltage VF of the temperature sensitive diode 20.

(Seventh embodiment)
In the present embodiment, only different portions from the above embodiment will be described. In this embodiment, a thin film resistor is connected to the anode side of the temperature sensitive diode 20, and the forward voltage VF is adjusted by changing the resistance value of the thin film resistor by trimming or laser cutting the thin film resistor. Is different from the above embodiment. In the drawings used in the present embodiment, parts that are the same or equivalent to the components shown in the drawings used in the first embodiment are denoted by the same reference numerals for the sake of simplicity. is there.

  FIG. 10 is a schematic front view of a semiconductor chip according to the seventh embodiment of the present invention. As shown in this figure, in the semiconductor chip S5, a thin film resistor 39 is connected to the anode side of the temperature sensitive diode 20, and a pad 80 is connected to the opposite side of the thin film resistor 39 from the temperature sensitive diode 20. . The thin film resistor 39 is formed of the same material as the resistors 31 to 34 used in the first embodiment.

  In such a configuration, the voltage value between the pads 10 and 80 is measured by an external circuit. Then, the thin film resistor 39 is trimmed or laser-cut to adjust the forward voltage VF so that the forward voltage VF of the temperature sensitive diode 20 falls within the range shown in the above embodiment.

  As described above, the present embodiment is characterized in that the forward voltage VF of the temperature sensitive diode 20 is adjusted by changing the resistance value by trimming or laser cutting the thin film resistor 39. As a result, even if the forward voltage VF of the temperature sensitive diode 20 varies in each semiconductor chip S5, the forward voltage VF is adjusted within a desired range by trimming each thin film resistor 39. can do. Therefore, variation in the forward voltage VF of the temperature sensitive diode 20 in each semiconductor chip S5 can be reduced. As described above, it is not necessary to provide a plurality of paths in the path constituted by the temperature sensitive diode 20 and the thin film resistor 39, and the forward voltage VF can be adjusted only by adjusting the resistance value of the thin film resistor 39. It is.

(Eighth embodiment)
In the present embodiment, only different portions from the above embodiment will be described. This embodiment is different from the above embodiment in that a resistor is arranged close to the temperature sensitive diode 20. In the drawings used in the present embodiment, parts that are the same or equivalent to the components shown in the drawings used in the first embodiment are denoted by the same reference numerals for the sake of simplicity. is there.

  11 and 12 are schematic front views of the semiconductor chip according to the present embodiment. FIG. 11 is a diagram schematically showing regions 91 and 92 in which the resistors 210 and 220 are arranged. FIG. It is the figure which showed an example of the circuit. Here, in FIG. 11, a direction parallel to an arbitrary side of the rectangular semiconductor chip S6 is defined as an x-axis (left and right direction in FIG. 11), and a direction perpendicular to the x-axis is defined as a y-axis (in FIG. Direction).

  As shown in FIG. 11, in the semiconductor chip S6 according to the present embodiment, the temperature-sensitive diode 20 is disposed substantially at the center of the semiconductor chip S6. The temperature-sensitive diode 20 is disposed in a first region 91 having a rectangular shape formed with a length X in the x-axis direction and a length Y in the y-axis direction.

  Further, a quadrangular second region 92 surrounding the first region 91 is provided. Specifically, the second region 92 has a quadrangular shape in which the length in the x-axis direction is 9X and the length in the y-axis direction is 9Y. In the second region 92, the first region 91 is arranged at a position 4X from each side parallel to the y-axis direction and 4Y from each side parallel to the x-axis direction.

  Then, the resistors 210 and 220 are arranged in the semiconductor chip S6 so that the region excluding the first region 91 in the second region 92 includes at least part of the resistors 210 and 220.

  FIG. 12 shows a specific circuit diagram. As shown in FIG. 12, the temperature sensitive diode 20 is disposed in the first region 91 in the semiconductor chip S6. In addition, the resistor 210 connected in series to the temperature sensitive diode 20 and the resistor 220 connected to the resistor 210 are arranged in the second region 92. The pads 81 to 83 are connected to the wirings extended from the resistor 220 and the contacts C and D, respectively.

  Thus, by arranging the resistors 210 and 220 in the vicinity of the temperature sensitive diode 20, the temperature of each of the resistors 210 and 220 becomes equal to that of the temperature sensitive diode 20, and the temperature characteristics of the resistors 210 and 220 are also included. Temperature adjustment can be performed and detection accuracy can be further improved. As described above, the semiconductor chip S6 has the highest temperature at the center, and the temperature decreases toward the outer edge portion. Therefore, when using a resistor having temperature characteristics, the above arrangement method is particularly effective.

(Other embodiments)
In each of the above embodiments, the temperature sensitive diode 20 detects the temperature of each of the semiconductor chips S1 to S5. For example, the temperature sensitive diode 20 is also provided for a heat generating component such as a capacitor, a coil, or an electronic component. It does n’t matter.

  In each of the above embodiments, for example, as shown in FIG. 1, the number of the temperature sensitive diodes 20 used in the temperature detection unit 100 is two. However, the number is not limited to this number, and any number may be used. Absent.

  In the above embodiments, 3 to 5 types of resistors are connected, but any number of resistors may be used as long as there are two or more.

  In each of the above embodiments, the resistors 31 to 34, 36a to 36c, 37a to 37c, 38a to 38c, the thin film resistor 39, the wiring 35, and the corresponding elements for adjusting the forward voltage VF of the temperature sensitive diode 20 are provided. The pads 41 to 45, 46, 47 a to 47 c, 48 a to 48 c, 49 a to 49 d, and 80 are provided on the anode side of the temperature sensitive diode 20, but these may be provided on the cathode side of the temperature sensitive diode 20. Absent.

  In each of the embodiments described above, each pad 10, 41 to 45, 46, 47a to 47c, 48a to 48c, 49a to 49d, 80 and an external circuit are electrically connected to each other by wire bonding. You may make it connect to.

  In the eighth embodiment, each of the regions 91 and 92 has a rectangular shape preferable for circuit design, but the shape of the region may be any shape. For example, it may be an arc-shaped region. In addition, the size of the second region 92 with respect to the first region 91 is four times the top, bottom, left, and right sides of the temperature sensitive diode, and at least a part of the resistor connected to the temperature sensitive diode 20 is disposed. Although it is possible to make the temperature of the diode 20 and the resistor connected thereto substantially equal, this size is not limited to this depending on the temperature requirement accuracy of the circuit, and is the most preferable size in circuit design. Just do it.

1 is a schematic front view of a semiconductor chip according to a first embodiment of the present invention. It is the figure which showed correlation with temperature and the forward voltage VF of a temperature sensitive diode. It is a circuit diagram which adjusts the forward voltage VF of a temperature sensitive diode by a constant current system. It is the figure which showed a mode that the forward voltage VF of each temperature sensitive diode was adjusted. In 2nd Embodiment of this invention, it is a circuit diagram which adjusts the forward voltage VF of a temperature sensitive diode by a constant voltage system. It is a schematic front view of the semiconductor chip which concerns on 3rd Embodiment of this invention. In 4th Embodiment, it is the figure which showed a mode that a part of wiring which each connects each resistance formed in the semiconductor chip was cut. It is a schematic front view of the semiconductor chip which concerns on 5th Embodiment of this invention. It is a schematic front view of the semiconductor chip which concerns on 6th Embodiment of this invention. It is a schematic front view of the semiconductor chip which concerns on 7th Embodiment of this invention. It is a schematic front view of the semiconductor chip which concerns on 8th Embodiment of this invention, and is the figure which showed typically the area | region where resistance is arrange | positioned. It is a schematic front view of the semiconductor chip which concerns on 8th Embodiment of this invention, and is the figure which showed an example of the specific circuit.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 ... Temperature detection part 10, 11, 41-45, 46, 47a-47c, 48a-48c, 49a-49d, 80-83 ... Pad, 20 ... Temperature-sensitive diode,
31-34, 36a-36c, 37a-37c, 38a-38c, 210, 220 ... resistance,
35 ... wiring, 39 ... thin film resistor, 91, 92 ... first and second regions.

Claims (9)

In a semiconductor device provided with a temperature detection element (20) that outputs a voltage according to the temperature of heat generated by the semiconductor element being formed and the semiconductor element is activated,
Resistances (31-34, 36a-36c, 37a-37c, 38a-38c, 210, 220) connected in series to the temperature detection element are provided, and a voltage between the temperature detection element and both ends of the resistance The semiconductor device is characterized in that the resistance value of the resistor is adjusted so as to be within a desired range. In a semiconductor device provided with a temperature detection element (20) that outputs a voltage according to the temperature of heat generated by the semiconductor element being formed and the semiconductor element is activated,
A plurality of resistors (31 to 34, 36a to 36c, 37a to 37c, 38a to 38c, 210, 220) connected in series to the temperature detecting element are provided, and both ends of the temperature detecting element and the plurality of resistors are provided. One of the plurality of resistors is selected so that the voltage between the two is within a desired range. A plurality of pads (10, 11, 41 to 45, 46, 47a to 47c, 48a to 48c, 49a to 49d, 81 to 83) are disposed on a path constituted by the temperature detection element and the plurality of resistors. The voltage between the selected resistor and the temperature detecting element is output to the outside by using any one of these pads. The semiconductor device described. In a semiconductor device provided with a temperature detection element (20) that outputs a voltage according to the temperature of heat generated by the semiconductor element being formed and the semiconductor element is activated,
A plurality of resistors (31 to 34) and wirings (35) branched from the temperature detecting element and connected respectively; pads (41 to 45) provided corresponding to the plurality of resistors and the wirings; A pad (10) provided on the side opposite to the plurality of resistors and the wiring in the temperature detection element, and a plurality of paths including the temperature detection element between the pads are configured,
One of the plurality of resistors and the wiring is selected so that the voltage between the pads is within a desired range, and a path including the selected resistance or wiring is used. A semiconductor device characterized by the above. Among the plurality of paths, in a path including an unselected resistance or wiring, the unselected resistance or wiring is electrically disconnected from the temperature detection element. The semiconductor device according to claim 4. 6. The semiconductor device according to claim 2, wherein the plurality of resistors are made of CrSi. In a semiconductor device provided with a temperature detection element (20) that outputs a voltage according to the temperature of heat generated by the semiconductor element being formed and the semiconductor element is activated,
A thin film resistor (39) connected in series to the temperature detecting element is provided, and the thin film resistor is trimmed so that a voltage between the temperature detecting element and the thin film resistor is within a desired range. A semiconductor device characterized by that. The semiconductor device according to claim 7, wherein the thin film resistor is made of CrSi. In a semiconductor device provided with a temperature detection element (20) that outputs a voltage according to the temperature of heat generated by the semiconductor element being formed and the semiconductor element is activated,
Resistors (31 to 34, 36a to 36c, 37a to 37c, 38a to 38c, 210, and 220) connected in series to the temperature detecting element are provided, and the resistors are arranged close to the temperature detecting element. And a resistance value of the resistor is adjusted so that a voltage between both ends of the temperature detecting element and the resistor falls within a desired range.

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