JP2013040406A - 導電性の基体表面の表面処理方法 - Google Patents
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- 239000000203 mixture Substances 0.000 claims description 2
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- 239000011521 glass Substances 0.000 description 15
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- 239000005297 pyrex Substances 0.000 description 14
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 description 1
- YQCSPTINZYXMJL-UHFFFAOYSA-N [Rb].[Cu] Chemical compound [Rb].[Cu] YQCSPTINZYXMJL-UHFFFAOYSA-N 0.000 description 1
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- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
- B23H3/00—Electrochemical machining, i.e. removing metal by passing current between an electrode and a workpiece in the presence of an electrolyte
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00634—Processes for shaping materials not provided for in groups B81C1/00444 - B81C1/00626
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/14—Etching locally
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/0146—Processes for removing material not provided for in B81C2201/0129 - B81C2201/0145
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Weting (AREA)
- Electroplating Methods And Accessories (AREA)
- ing And Chemical Polishing (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Physical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】固体のイオン伝導性材料を有する工具1が、少なくとも部分的に、シリコンウエハ表面として形成された基体表面2と接触されており、前記工具は陰イオン伝導体として形成されており、かつ前記工具に電位が印加されることにより、陰イオン伝導体から陰イオンが出て、前記陰イオンがシリコンウエハ表面で、シリコンウエハ表面と反応する化合物へと変化し、ならびに、シリコンと反応可能な前記化合物が、シリコンウエハ表面で気体状の化合物を遊離し、これによりシリコンウエハ表面が局所的に除去される。
【選択図】図3
Description
2 基体表面
3 凹面状のくぼみ
4 周縁
5 電解質
6 誘電体
7 タンタル層
8 銅層
S 基体
A 陽極
K 陰極
10 プラチナ層
11 セラミックスの導管
Claims (14)
- 導電性の基体表面の表面処理方法であって、
固体のイオン伝導性材料を有する工具が、少なくとも部分的に、シリコンウエハ表面として形成された基体表面と接触されており、前記工具は陰イオン伝導体として形成されており、かつ前記工具に電位が印加されることにより、陰イオン伝導体から陰イオンが出て、前記陰イオンがシリコンウエハ表面で、シリコンウエハ表面と反応する化合物へと変化し、ならびに
シリコンと反応可能な前記化合物が、シリコンウエハ表面で気体状の化合物を遊離し、これによりシリコンウエハ表面が局所的に除去される方法。 - 陰イオン伝導体としてCaF2、LaF3が使用されることを特徴とする請求項1に記載の方法。
- シリコンウエハ表面での除去工程が、200℃〜300℃の温度で実施されることを特徴とする請求項1または2に記載の方法。
- 貯留槽として、工具の基体表面に面していない側に、陰イオンを受け取る、または放出する液体電解質が設けられることを特徴とする請求項1から3のいずれか一項に記載の方法。
- シリコンウエハ表面の代わりに、シリコンカーバイド表面が使用されることを特徴とする請求項1から3のいずれか一項に記載の方法。
- シリコンウエハ表面の代わりに、グラファイトまたはガラス状炭素のような炭素を含む層が使用されることを特徴とする請求項1から3のいずれか一項に記載の方法。
- 導電性の基体表面の表面処理方法であって、
ZrO2の形の固体のイオン伝導性材料を有する工具が、少なくとも部分的に、例えばグラファイトおよび/またはガラス状炭素のような炭素を含む基体表面と接触されており、前記工具は陰イオン伝導体として形成されており、かつ前記工具に電位が印加されることにより、陰イオン伝導体から陰イオンが出て、前記陰イオンが基体表面で、基体表面と反応する化合物へと変化し、ならびに
グラファイトまたはガラス状炭素と反応可能な前記化合物が、基体表面で気体状の化合物となり、それによって基体表面が局所的に除去される方法。 - 工具が力を加えられて基体表面上に押されることを特徴とする請求項1から7のいずれか一項に記載の方法。
- 工具が基体表面に面した側および面していない側を備えることと、
基体表面と、工具の基体表面に面していない側との間に電位が印加されることと
を特徴とする請求項1から8のいずれか一項に記載の方法。 - 構造化された工具表面を備えた工具を使用する場合、前記工具表面を基体表面上に設置し、かつ工具が基体表面と接触している領域内の基体表面からの陰イオンが工具によって受け取られるように電位を印加することによって、局所的に制限された材料除去工程が実現され、前記材料除去工程によって基体表面が、いわば局所的なエッチング工程のように構造化されることを特徴とする請求項1から9のいずれか一項に記載の方法。
- 基体表面によって受け取られる陰イオンが、工具の化学的組成を変化させることなく、専ら工具を通って移送されるように、工具の陰イオン伝導性材料が選択されることを特徴とする請求項1から10のいずれか一項に記載の方法。
- 貯留槽として、工具の基体表面に面していない側に、陰イオンを放出する気体状の貯留槽が設けられることを特徴とする請求項1から3のいずれか一項に記載の方法。
- 前記貯留槽が、工具の基体表面に面していない側で、基体から空間的に気密に分離されることを特徴とする請求項12に記載の方法。
- 工具および/または基体表面が振動に曝されることにより、工具表面と基体表面の間に生じた気体状の化合物が漏れ出ることを特徴とする請求項1から13のいずれか一項に記載の方法。
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DE102006019189 | 2006-04-21 | ||
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DE102006030323.7 | 2006-06-30 | ||
DE102006030323A DE102006030323A1 (de) | 2006-04-21 | 2006-06-30 | Verfahren zur Oberflächenbehandlung einer metallischen Substratoberfläche |
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JP2012200153A Active JP5484538B2 (ja) | 2006-04-21 | 2012-09-12 | 導電性の基体表面の表面処理方法 |
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US (1) | US8758590B2 (ja) |
EP (3) | EP2058076B1 (ja) |
JP (3) | JP5140661B2 (ja) |
DE (1) | DE102006030323A1 (ja) |
WO (1) | WO2007121948A2 (ja) |
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DE102009000073A1 (de) | 2009-01-08 | 2010-07-15 | Robert Bosch Gmbh | Verfahren und Vorrichtung zur elektrochemischen Bearbeitung von Substraten |
WO2013084934A1 (ja) * | 2011-12-06 | 2013-06-13 | 国立大学法人大阪大学 | 固体酸化物の加工方法及びその装置 |
KR102427513B1 (ko) * | 2016-09-16 | 2022-08-01 | 쓰리엠 이노베이티브 프로퍼티즈 캄파니 | 나노구조화된 원통형 롤을 제조하는 방법 |
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JP2005238420A (ja) * | 2004-02-27 | 2005-09-08 | Rikogaku Shinkokai | 固体中のイオンおよび/または原子の操作方法 |
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DE102004040217A1 (de) * | 2004-08-19 | 2006-03-02 | Mtu Aero Engines Gmbh | Elektrode zum elektrochemischen Senken |
WO2006119058A1 (en) * | 2005-04-29 | 2006-11-09 | E. I. Du Pont De Nemours And Company | Membrane-mediated electropolishing with topographically patterned membranes |
JP5365829B2 (ja) * | 2005-12-15 | 2013-12-11 | 日本電気株式会社 | スイッチング素子およびその製造方法 |
US20070215480A1 (en) * | 2006-03-16 | 2007-09-20 | Fang Nicholas X | Pattern transfer by solid state electrochemical stamping |
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2006
- 2006-06-30 DE DE102006030323A patent/DE102006030323A1/de not_active Ceased
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2007
- 2007-04-20 US US12/295,321 patent/US8758590B2/en active Active
- 2007-04-20 EP EP08022416.5A patent/EP2058076B1/de active Active
- 2007-04-20 EP EP07724433A patent/EP2010351B1/de active Active
- 2007-04-20 EP EP08022415.7A patent/EP2058075B1/de active Active
- 2007-04-20 JP JP2009505790A patent/JP5140661B2/ja active Active
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Patent Citations (3)
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JPS6357800A (ja) * | 1986-08-26 | 1988-03-12 | Chem Yamamoto:Kk | 鉄鋼材表面に施した亜鉛系被膜の除去方法 |
WO2005042810A2 (en) * | 2003-10-31 | 2005-05-12 | E.I Du Pont De Nemours And Company | Membrane -mediated electropolishing |
JP2005238420A (ja) * | 2004-02-27 | 2005-09-08 | Rikogaku Shinkokai | 固体中のイオンおよび/または原子の操作方法 |
Also Published As
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DE102006030323A1 (de) | 2007-10-25 |
JP2009534523A (ja) | 2009-09-24 |
EP2058076B1 (de) | 2014-05-07 |
EP2058076A3 (de) | 2013-02-13 |
JP5484538B2 (ja) | 2014-05-07 |
WO2007121948A3 (de) | 2008-06-26 |
EP2058075A2 (de) | 2009-05-13 |
JP5140661B2 (ja) | 2013-02-06 |
WO2007121948A2 (de) | 2007-11-01 |
JP2013032593A (ja) | 2013-02-14 |
EP2010351A2 (de) | 2009-01-07 |
EP2010351B1 (de) | 2012-06-27 |
US20090283416A1 (en) | 2009-11-19 |
EP2058075B1 (de) | 2014-06-18 |
EP2058075A3 (de) | 2013-02-13 |
US8758590B2 (en) | 2014-06-24 |
JP5640055B2 (ja) | 2014-12-10 |
EP2058076A2 (de) | 2009-05-13 |
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