JP2013008755A - 真空処理装置 - Google Patents
真空処理装置 Download PDFInfo
- Publication number
- JP2013008755A JP2013008755A JP2011138925A JP2011138925A JP2013008755A JP 2013008755 A JP2013008755 A JP 2013008755A JP 2011138925 A JP2011138925 A JP 2011138925A JP 2011138925 A JP2011138925 A JP 2011138925A JP 2013008755 A JP2013008755 A JP 2013008755A
- Authority
- JP
- Japan
- Prior art keywords
- plate material
- light
- vacuum
- center
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012545 processing Methods 0.000 title claims abstract description 39
- 239000000463 material Substances 0.000 claims abstract description 31
- 239000010453 quartz Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 abstract description 5
- 238000009825 accumulation Methods 0.000 abstract 1
- 238000001312 dry etching Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 238000009529 body temperature measurement Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000012790 confirmation Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000005513 bias potential Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
【解決手段】 本発明では、真空チャンバの壁面に設けられる覗き窓8が、内部に導線Wが埋め込まれた透光性板材81を備える。透光性板材の中心Cpからその周囲に向かう方向を径方向とし、この透光性板材の中心と、当該中心から径方向の距離が最短となる透光性板材の周囲までの距離の中点Mpとを結ぶ線を半径とする仮想円領域内で透光性板材の中央領域を除く領域に、前記導線が蛇行させて配置され、その自由端を透光性板材外表面に延出させてなる。
【選択図】 図3
Description
Claims (2)
- 真空チャンバ内で処理対象物に対して所定処理を施す真空処理装置において、
真空チャンバの壁面に覗き窓が設けられ、この覗き窓が、内部に導線が埋め込まれた透光性板材を備え、透光性板材の中心からその周囲に向かう方向を径方向とし、この透光性板材の中心と、当該中心から径方向の距離が最短となる透光性板材の周囲までの距離の中点とを結ぶ線を半径とする仮想円領域内で透光性板材の中央領域を除く領域に、前記導線が蛇行させて配置され、その自由端を透光性板材外表面に延出させてなることを特徴とする真空処理装置。 - 前記透光性板材は、2枚の石英製の板材を、導線を埋め込んだ状態で溶着して構成され、前記導線が、Pt、Au、W及びMoの中から選択された材料製であることを特徴とする請求項1記載の真空処理装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011138925A JP5731292B2 (ja) | 2011-06-22 | 2011-06-22 | 真空処理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011138925A JP5731292B2 (ja) | 2011-06-22 | 2011-06-22 | 真空処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013008755A true JP2013008755A (ja) | 2013-01-10 |
JP5731292B2 JP5731292B2 (ja) | 2015-06-10 |
Family
ID=47675874
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011138925A Active JP5731292B2 (ja) | 2011-06-22 | 2011-06-22 | 真空処理装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5731292B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20220019440A (ko) | 2020-08-10 | 2022-02-17 | 삼성전자주식회사 | 윈도우를 갖는 플라즈마 처리 장치, 분석 장치, 및 챔버 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6428823A (en) * | 1987-07-24 | 1989-01-31 | Hitachi Ltd | Plasma processor |
JPH02224330A (ja) * | 1989-02-27 | 1990-09-06 | Oki Electric Ind Co Ltd | エッチング自動終点検出装置の覗窓 |
JPH0350723A (ja) * | 1989-07-18 | 1991-03-05 | Nec Corp | プラズマエッチング装置 |
JPH11274136A (ja) * | 1998-03-26 | 1999-10-08 | Toshiba Corp | 反応処理装置及び反応処理方法 |
-
2011
- 2011-06-22 JP JP2011138925A patent/JP5731292B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6428823A (en) * | 1987-07-24 | 1989-01-31 | Hitachi Ltd | Plasma processor |
JPH02224330A (ja) * | 1989-02-27 | 1990-09-06 | Oki Electric Ind Co Ltd | エッチング自動終点検出装置の覗窓 |
JPH0350723A (ja) * | 1989-07-18 | 1991-03-05 | Nec Corp | プラズマエッチング装置 |
JPH11274136A (ja) * | 1998-03-26 | 1999-10-08 | Toshiba Corp | 反応処理装置及び反応処理方法 |
Also Published As
Publication number | Publication date |
---|---|
JP5731292B2 (ja) | 2015-06-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI684238B (zh) | 載置台及基板處理裝置 | |
TWI843457B (zh) | 電漿處理裝置 | |
US9773645B2 (en) | Remote plasma generator using ceramic | |
US10770270B2 (en) | High power electrostatic chuck with aperture-reducing plug in a gas hole | |
CN105359265A (zh) | 原位可移除式静电夹盘 | |
TWI501288B (zh) | 電漿處理設備用之可動式腔室襯墊電漿侷限隔屏組合 | |
TW498420B (en) | Hot plate and manufacture method of semiconductor device | |
US11948826B2 (en) | High power electrostatic chuck design with radio frequency coupling | |
CN102282645B (zh) | 衬底处理系统中的静电吸盘 | |
WO2017101738A1 (zh) | 静电卡盘机构以及半导体加工设备 | |
KR20100127200A (ko) | 배치대 구조 및 처리 장치 | |
US10692703B2 (en) | Ceramic heater with enhanced RF power delivery | |
JP2009170509A (ja) | ヒータ内蔵静電チャックを備えたプラズマ処理装置 | |
US11387135B2 (en) | Conductive wafer lift pin o-ring gripper with resistor | |
JP2019125811A (ja) | 薄い基板をハンドリングするための静電キャリア | |
TW200832530A (en) | Plasma processing chamber with ground member integrity indicator and method for using the same | |
JP2009500812A5 (ja) | ||
KR20140097312A (ko) | Rf 접지의 신뢰성을 개선하기 위한 장치 및 방법들 | |
TW201931514A (zh) | 用於晶圓處理的升降銷系統及升降銷總成 | |
JP2008199024A (ja) | 基板支持アセンブリ | |
TWI732151B (zh) | 發熱構件 | |
US20170352565A1 (en) | Workpiece carrier with gas pressure in inner cavities | |
US10950418B2 (en) | Plasma processing apparatus and plasma processing method | |
JP5731292B2 (ja) | 真空処理装置 | |
US20120145701A1 (en) | Electrical resistance heater and heater assemblies |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140508 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20141225 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150106 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150128 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150331 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150409 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5731292 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |