JP2012532437A - Iii族窒化物デバイスにおける制御ピット形成 - Google Patents
Iii族窒化物デバイスにおける制御ピット形成 Download PDFInfo
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- JP2012532437A JP2012532437A JP2012516888A JP2012516888A JP2012532437A JP 2012532437 A JP2012532437 A JP 2012532437A JP 2012516888 A JP2012516888 A JP 2012516888A JP 2012516888 A JP2012516888 A JP 2012516888A JP 2012532437 A JP2012532437 A JP 2012532437A
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- 230000015572 biosynthetic process Effects 0.000 title description 2
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 150000004767 nitrides Chemical class 0.000 claims abstract description 8
- 239000000203 mixture Substances 0.000 claims description 14
- 229910002704 AlGaN Inorganic materials 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 27
- 239000000463 material Substances 0.000 description 13
- 229910052594 sapphire Inorganic materials 0.000 description 9
- 239000010980 sapphire Substances 0.000 description 9
- 239000002131 composite material Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 230000007480 spreading Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000004299 exfoliation Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (16)
- n型領域とp型領域との間に配置されたIII族窒化物発光層と、前記n型領域及び前記p型領域のうち一方の中に配置された複数の層対とを有する半導体構造体を含み、
各層対は、InGaN層と前記InGaN層と直接接触するピット充填層とを含み、
前記ピット充填層は、GaN、AlGaN、AlInGaN及びAlInNのうち1つである、デバイス。 - 各ピット充填層は、GaNである、請求項1に記載のデバイス。
- 各ピット充填層は、AlGaNである、請求項1に記載のデバイス。
- 各ピット充填層は、3%〜10%のAlN組成物を有する、請求項3に記載のデバイス。
- 各ピット充填層は、AlInGaNである、請求項1に記載のデバイス。
- 各ピット充填層は、3%〜10%のAlN組成物を有する、請求項5に記載のデバイス。
- 各InGaN層は、3%〜10%のInN組成物を有する、請求項1に記載のデバイス。
- 各InGaN層は、100〜500nmの厚さを有する、請求項1に記載のデバイス。
- 各ピット充填層は、10〜50nmの厚さを有する、請求項1に記載のデバイス。
- 前記層対のうち1つにおける前記InGaN層の上面に配置された複数のピットを更に有し、
前記InGaN層の前記上面の前記複数のピットのサイズは、同一の層対における前記ピット充填層の上面に配置された複数のピットのサイズよりも大きい、請求項1に記載のデバイス。 - 2〜50の層対が前記半導体構造体に含まれる、請求項1に記載のデバイス。
- 前記発光層及びp型領域の部分は、前記n型領域の部分を露出させるために除去され、
当該デバイスは、前記p型領域上に配置された第1の金属接点と、前記n型領域上に配置された第2の金属接点とを有し、
前記第1の金属接点及び前記第2の金属接点は、前記半導体構造体の同一面上に配置される、請求項1に記載のデバイス。 - 各ピット充填層は、略単結晶層である、請求項1に記載のデバイス。
- n型領域とp型領域との間に配置されたIII族窒化物発光層と、前記n型領域及び前記p型領域のうち一方の中に配置された複数の層対とを有する半導体構造体を成長させるステップを有し、
各層対は、InGaN層と前記InGaN層と直接接触するピット充填層とを有し、
前記ピット充填層は、GaN、AlGaN、AlInGaN及びAlInNのうち1つである、方法。 - 900℃よりも大きい温度で各ピット充填層を成長させるステップを更に有する、請求項14に記載の方法。
- 920℃〜1060℃の温度で各ピット充填層を成長させるステップを更に有する、請求項14に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/495,258 US8183577B2 (en) | 2009-06-30 | 2009-06-30 | Controlling pit formation in a III-nitride device |
US12/495,258 | 2009-06-30 | ||
PCT/IB2010/052364 WO2011001307A1 (en) | 2009-06-30 | 2010-05-27 | Controlling pit formation in a iii-nitride device |
Publications (2)
Publication Number | Publication Date |
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JP2012532437A true JP2012532437A (ja) | 2012-12-13 |
JP5848245B2 JP5848245B2 (ja) | 2016-01-27 |
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JP2012516888A Active JP5848245B2 (ja) | 2009-06-30 | 2010-05-27 | Iii族窒化物デバイスにおける制御ピット形成 |
Country Status (7)
Country | Link |
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US (2) | US8183577B2 (ja) |
EP (1) | EP2449604B1 (ja) |
JP (1) | JP5848245B2 (ja) |
KR (2) | KR102059247B1 (ja) |
CN (1) | CN102473796B (ja) |
TW (2) | TWI515918B (ja) |
WO (1) | WO2011001307A1 (ja) |
Cited By (1)
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KR20150088117A (ko) * | 2014-01-23 | 2015-07-31 | 엘지이노텍 주식회사 | 발광소자 및 이를 구비하는 조명 시스템 |
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KR101992364B1 (ko) * | 2012-12-05 | 2019-06-24 | 엘지이노텍 주식회사 | 발광 소자 |
KR102142709B1 (ko) * | 2013-12-05 | 2020-08-07 | 엘지이노텍 주식회사 | 발광 소자 및 이를 구비한 조명 장치 |
Citations (9)
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JP2000261035A (ja) * | 1999-03-12 | 2000-09-22 | Toyoda Gosei Co Ltd | GaN系の半導体素子 |
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JP2005322722A (ja) | 2004-05-07 | 2005-11-17 | Korai Kagi Kofun Yugenkoshi | 発光ダイオード |
US8334155B2 (en) | 2005-09-27 | 2012-12-18 | Philips Lumileds Lighting Company Llc | Substrate for growing a III-V light emitting device |
US7534638B2 (en) | 2006-12-22 | 2009-05-19 | Philips Lumiled Lighting Co., Llc | III-nitride light emitting devices grown on templates to reduce strain |
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- 2009-06-30 US US12/495,258 patent/US8183577B2/en active Active
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- 2010-05-25 TW TW099116705A patent/TWI515918B/zh active
- 2010-05-25 TW TW104136058A patent/TWI649897B/zh active
- 2010-05-27 KR KR1020177008685A patent/KR102059247B1/ko active IP Right Grant
- 2010-05-27 EP EP10726297.4A patent/EP2449604B1/en active Active
- 2010-05-27 KR KR20127002546A patent/KR20120093819A/ko active Search and Examination
- 2010-05-27 WO PCT/IB2010/052364 patent/WO2011001307A1/en active Application Filing
- 2010-05-27 JP JP2012516888A patent/JP5848245B2/ja active Active
- 2010-05-27 CN CN201080029720.0A patent/CN102473796B/zh active Active
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Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000261035A (ja) * | 1999-03-12 | 2000-09-22 | Toyoda Gosei Co Ltd | GaN系の半導体素子 |
JP2002540618A (ja) * | 1999-03-26 | 2002-11-26 | 松下電器産業株式会社 | 歪補償層を有する半導体構造及び製造方法 |
JP2002261027A (ja) * | 2001-03-02 | 2002-09-13 | Mitsubishi Cable Ind Ltd | GaN系半導体基材およびその製造方法 |
JP2004531894A (ja) * | 2001-06-15 | 2004-10-14 | クリー インコーポレイテッド | 紫外線発光ダイオード |
JP2005317823A (ja) * | 2004-04-30 | 2005-11-10 | Nitride Semiconductor Co Ltd | 窒化ガリウム系発光装置 |
JP2008539585A (ja) * | 2005-04-29 | 2008-11-13 | クリー インコーポレイテッド | 開いたピット中に延びる能動層を有する発光デバイス及びその製造方法 |
JP2005340860A (ja) * | 2005-08-12 | 2005-12-08 | Toshiba Electronic Engineering Corp | 半導体発光素子 |
JP2008288538A (ja) * | 2007-05-15 | 2008-11-27 | Philips Lumileds Lightng Co Llc | III族窒化物発光デバイスのためのp型層 |
WO2009039402A1 (en) * | 2007-09-19 | 2009-03-26 | The Regents Of The University Of California | (al,in,ga,b)n device structures on a patterned substrate |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20150088117A (ko) * | 2014-01-23 | 2015-07-31 | 엘지이노텍 주식회사 | 발광소자 및 이를 구비하는 조명 시스템 |
KR102119836B1 (ko) | 2014-01-23 | 2020-06-05 | 엘지이노텍 주식회사 | 발광소자 및 이를 구비하는 조명 시스템 |
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Publication number | Publication date |
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JP5848245B2 (ja) | 2016-01-27 |
TWI515918B (zh) | 2016-01-01 |
US20120205691A1 (en) | 2012-08-16 |
TWI649897B (zh) | 2019-02-01 |
EP2449604A1 (en) | 2012-05-09 |
TW201611331A (zh) | 2016-03-16 |
KR20120093819A (ko) | 2012-08-23 |
CN102473796A (zh) | 2012-05-23 |
KR102059247B1 (ko) | 2020-02-11 |
US8183577B2 (en) | 2012-05-22 |
US20100327256A1 (en) | 2010-12-30 |
EP2449604B1 (en) | 2017-11-29 |
TW201117417A (en) | 2011-05-16 |
WO2011001307A1 (en) | 2011-01-06 |
KR20170039312A (ko) | 2017-04-10 |
CN102473796B (zh) | 2015-07-22 |
US9012250B2 (en) | 2015-04-21 |
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