JP2012523305A - 安定な酸素終端半導体ナノ粒子の製造方法 - Google Patents
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Abstract
Description
無機バルク半導体物質を供し;次いで
選択された還元剤の存在下バルク半導体物質を粉砕し、その還元剤は、半導体物質の1以上の成分元素の酸化物を化学的に還元するか、または優先的に酸化することによってかかる酸化物の形成を防止するように作用し、
それにより、ナノ粒子間の電気的接触を可能にする、安定な表面を有する半導体ナノ粒子を供することを含む。
・化学量論的酸化被膜が表面に形成しかねない前に、高屈曲表面を持つ小さな粒径が達成されるような高い損耗率。WO2007/004014の開示は、一旦形成されると、かかる粒子は酸化に対して安定であることを示している。
・粒子表面上の準化学量論的酸化物の還元、および粉砕手段中の酸素の移動に必要な活性化エネルギーを克服するための高い粉砕温度。しかしながら、この温度は半導体物質の融解または分解温度より低く維持されるべきである
を含む。
方法の好ましい具体例において、3条件のすべてを用いる。
第1の2つの具体例において考えられる方法は、51200クロム鋼粉砕手段を用いて適用した。参照物質として、2503グレードシリコン金属を含むバルク物質を室温にて、粉砕手段としてジルコニアボールを用いてネオプレンドラムで、実験室ボールミル中で長期間、乾式ミルをかけた。確立された手順に従い、粒子サイズが低下するので、ジルコニアボールのサイズを15mm直径から、10mmを介して、5mmに低下させた。
Claims (22)
- 安定な表面を有する無機半導体ナノ粒子を製造する方法であって、
無機バルク半導体物質を供し;次いで
選択された還元剤の存在下バルク半導体物質を粉砕し、還元剤が、半導体物質の1以上の成分元素の酸化物を化学的に還元するか、または優先的に酸化することによってかかる酸化物の形成を防止するように作用し、
それにより、ナノ粒子間の電気的接触を可能にする安定な表面を有する半導体ナノ粒子を供することを含むことを特徴とする該方法。 - ナノ粒子の表面が、活性部位を終端する単層の準化学量論的酸化物または個々の酸素、水素およびヒドロキシル基で終端する請求項1記載の方法。
- 優先的な化学反応によって、半導体物質の1以上の成分元素の安定な化学量論的酸化物が還元されるか、または形成が防止されることを特徴とする請求項1記載の方法。
- 優先的な化学反応によって、半導体物質の1以上の成分元素の中間体準化学量論的酸化物が還元されるか、または形成が防止され、かくして、酸化物の最終的に安定な化学量論的な相の形成を妨害することを特徴とする請求項1記載の方法。
- 優先的な化学反応が、室温を上まわり、かつ、半導体物質の融解または分解温度を下回る温度で粉砕を行うことにより促進される請求項3または請求項4記載の方法。
- 粉砕が100℃〜200℃の温度で行われることを特徴とする請求項5記載の方法。
- 粉砕手段および/またはミルの1以上の成分が、選択された還元剤を含むことを特徴とする請求項1〜4のいずれか1記載の方法。
- 粉砕手段またはミルが、鉄、クロム、コバルト、ニッケル、スズ、チタン、タングステン、バナジウムおよびアルミニウムよりなる群から選択される金属、または1以上の該金属を含む合金を含むことを特徴とする請求項7記載の方法。
- 粉砕手段またはミルが、硬鋼、ステンレス鋼合金またはチタン合金を含むことを特徴とする請求項8記載の方法。
- バルク半導体物質がハンマー作用を持つ高エネルギーミルを用いて粉砕され、ミルの乳棒、ミルの乳鉢またはその双方が、選択された還元剤を含むことを特徴とする請求項1〜9のいずれか1記載の方法。
- バルク半導体物質が低エネルギーの撹拌媒体ミルを用いて粉砕され、粉砕手段、ミルのライニングまたは双方が選択された還元剤を含むことを特徴とする請求項1〜9のいずれか1記載の方法。
- 選択された還元剤が、バルク半導体物質の粉砕の間に、ミルに含まれた液体を含むことを特徴とする請求項1〜3のいずれか1記載の方法。
- 選択された還元剤が、塩酸、硫酸、硝酸、酢酸、ギ酸もしくは炭酸のいずれかを含む酸性溶液、またはその混合物であることを特徴とする請求項12記載の方法。
- 粉砕されたバルク半導体物質の温度をその粉砕の間100℃未満に維持することを含むことを特徴とする請求項12または請求項13記載の方法。
- 粉砕されたバルク半導体物質の温度をその粉砕の間50℃未満に維持することを含むことを特徴とする請求項14記載の方法。
- 無機バルク半導体物質が第IV族元素であることを特徴とする請求項1〜15のいずれか1記載の方法。
- 無機バルク半導体物質がシリコンまたはゲルマニウムであることを特徴とする請求項16記載の方法。
- 無機バルク半導体物質が、半導体酸化物以外に第II、III、IV、VおよびVI族からの元素を含む化合物または合金であることを特徴とする請求項1〜15のいずれか1記載の方法。
- 化合物または合金がGaAs、InSb、CdTe、PbSまたはCuxIn1−xSeを含むことを特徴とする請求項18記載の方法。
- 安定な表面を有する無機半導体ナノ粒子を製造するための装置であって、装置が、選択された還元剤を含む粉砕手段および/または1以上の成分を含むミルを含み、還元剤は、粉砕される場合に無機バルク半導体物質の1以上の成分元素の酸化物を化学的に還元するか、または優先的に酸化することによってかかる酸化物の形成を防止するように作用し、それにより、ナノ粒子間の電気的接触を可能にする安定な表面を有する半導体ナノ粒子を供することを特徴とする該装置。
- 選択された還元剤が、鉄、クロム、コバルト、ニッケル、スズ、チタン、タングステン、バナジウムおよびアルミニウムよりなる群から選択される金属、または1以上の該金属を含む合金である請求項20記載の装置。
- 選択された還元剤が、硬鋼、ステンレス鋼合金またはチタン合金を含む請求項21記載の装置。
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US20100192474A1 (en) | 2009-01-30 | 2010-08-05 | Lehigh University | Ultrahard stishovite nanoparticles and methods of manufacture |
DE102010034293B4 (de) | 2010-08-13 | 2015-09-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung einer Dispersion von Nanopartikeln |
CN103210703B (zh) | 2010-09-13 | 2016-08-10 | Pst传感器(私人)有限公司 | 装配和封装分立电子元件 |
CN103210290B (zh) | 2010-09-13 | 2015-12-09 | Pst传感器(私人)有限公司 | 印刷温度传感器 |
US9281104B2 (en) | 2014-03-11 | 2016-03-08 | Nano And Advanced Materials Institute Limited | Conductive thin film comprising silicon-carbon composite as printable thermistors |
EP3303224A1 (en) * | 2015-05-29 | 2018-04-11 | Merck Patent GmbH | Solution process for insb nanoparticles and application for ir detectors |
WO2018082794A1 (de) | 2016-11-07 | 2018-05-11 | Wacker Chemie Ag | Verfahren zum mahlen von silizium enthaltenden feststoffen |
CN106944230B (zh) * | 2017-04-07 | 2022-06-03 | 北京东方燕京工程技术有限责任公司 | 可调节的磨矿工艺 |
CN107151001B (zh) * | 2017-05-18 | 2019-09-17 | 清华-伯克利深圳学院筹备办公室 | 一种制备高质量大尺寸二维材料分散液的方法 |
CN107138731A (zh) * | 2017-06-07 | 2017-09-08 | 广州艾普纳米科技有限公司 | 一种纳米金属粉末的制备方法 |
CN109093124B (zh) * | 2017-06-21 | 2020-11-27 | 北京大学 | 一种高能球磨还原法制备金属纳米材料的方法 |
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JP2020152585A (ja) * | 2019-03-18 | 2020-09-24 | 太平洋セメント株式会社 | 窒化ガリウムの粉砕方法 |
JP7257830B2 (ja) | 2019-03-18 | 2023-04-14 | 太平洋セメント株式会社 | 窒化ガリウムの粉砕方法 |
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EP2416885B1 (en) | 2018-02-28 |
CN102036752A (zh) | 2011-04-27 |
KR101544991B1 (ko) | 2015-08-18 |
KR20120078768A (ko) | 2012-07-11 |
WO2009125370A1 (en) | 2009-10-15 |
EP2416885A1 (en) | 2012-02-15 |
US20120018551A1 (en) | 2012-01-26 |
JP5650103B2 (ja) | 2015-01-07 |
RU2011137638A (ru) | 2013-03-20 |
RU2513179C2 (ru) | 2014-04-20 |
CN102036752B (zh) | 2014-05-07 |
US8434704B2 (en) | 2013-05-07 |
ZA201008013B (en) | 2013-01-30 |
ES2670747T3 (es) | 2018-05-31 |
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