JP2012502504A5 - - Google Patents
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- Publication number
- JP2012502504A5 JP2012502504A5 JP2011526952A JP2011526952A JP2012502504A5 JP 2012502504 A5 JP2012502504 A5 JP 2012502504A5 JP 2011526952 A JP2011526952 A JP 2011526952A JP 2011526952 A JP2011526952 A JP 2011526952A JP 2012502504 A5 JP2012502504 A5 JP 2012502504A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film material
- metastable species
- silicon
- deposition chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/209,699 US8252112B2 (en) | 2008-09-12 | 2008-09-12 | High speed thin film deposition via pre-selected intermediate |
| US12/209,699 | 2008-09-12 | ||
| PCT/US2009/056445 WO2010030729A2 (en) | 2008-09-12 | 2009-09-10 | High speed thin film deposition via pre-selected intermediate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012502504A JP2012502504A (ja) | 2012-01-26 |
| JP2012502504A5 true JP2012502504A5 (OSRAM) | 2012-10-25 |
Family
ID=42005730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011526952A Pending JP2012502504A (ja) | 2008-09-12 | 2009-09-10 | あらかじめ選択された中間生成物を介する高速薄膜蒸着 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8252112B2 (OSRAM) |
| EP (1) | EP2327087A2 (OSRAM) |
| JP (1) | JP2012502504A (OSRAM) |
| KR (1) | KR20110053349A (OSRAM) |
| CN (1) | CN102150236A (OSRAM) |
| WO (1) | WO2010030729A2 (OSRAM) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8900403B2 (en) | 2011-05-10 | 2014-12-02 | Lam Research Corporation | Semiconductor processing system having multiple decoupled plasma sources |
| US8980046B2 (en) | 2011-04-11 | 2015-03-17 | Lam Research Corporation | Semiconductor processing system with source for decoupled ion and radical control |
| US9111728B2 (en) | 2011-04-11 | 2015-08-18 | Lam Research Corporation | E-beam enhanced decoupled source for semiconductor processing |
| US9177756B2 (en) | 2011-04-11 | 2015-11-03 | Lam Research Corporation | E-beam enhanced decoupled source for semiconductor processing |
| US8900402B2 (en) | 2011-05-10 | 2014-12-02 | Lam Research Corporation | Semiconductor processing system having multiple decoupled plasma sources |
| CN103022178A (zh) * | 2011-09-23 | 2013-04-03 | 吉富新能源科技(上海)有限公司 | 利用四氟化硅制作高效率微晶硅薄膜太阳能电池 |
| US20130272928A1 (en) * | 2012-04-12 | 2013-10-17 | Devi Shanker Misra | Apparatus for the deposition of diamonds by microwave plasma chemical vapour deposition process and substrate stage used therein |
| US10319872B2 (en) | 2012-05-10 | 2019-06-11 | International Business Machines Corporation | Cost-efficient high power PECVD deposition for solar cells |
| WO2015005904A1 (en) | 2013-07-09 | 2015-01-15 | Halliburton Energy Services, Inc. | Integrated computational elements with frequency selective surface |
| US10718881B2 (en) | 2013-07-09 | 2020-07-21 | Halliburton Energy Services, Inc. | Integrated computational elements with laterally-distributed spectral filters |
| BR112016011057A8 (pt) | 2013-12-24 | 2020-04-22 | Halliburton Energy Services Inc | método e sistema |
| MX359927B (es) | 2013-12-24 | 2018-10-16 | Halliburton Energy Services Inc | Fabricacion de capas criticas de elementos computacionales integrados. |
| US10914863B2 (en) | 2013-12-24 | 2021-02-09 | Halliburton Energy Services, Inc. | Real-time monitoring of fabrication of integrated computational elements |
| MX362272B (es) | 2013-12-24 | 2019-01-10 | Halliburton Energy Services Inc | Ajuste de la fabricacion de elementos computacionales integrados. |
| MX361204B (es) | 2013-12-30 | 2018-11-30 | Halliburton Energy Services Inc | Determinación de la dependencia de temperatura de índices de refracción complejos de los materiales de capa durante la fabricación de elementos informáticos integrados. |
| BR112016011904A2 (pt) | 2013-12-31 | 2017-08-08 | Halliburton Energy Services Inc | Sistema fabricação de um elemento computacional integrado |
| WO2015122923A1 (en) | 2014-02-14 | 2015-08-20 | Halliburton Energy Services, Inc. | In-situ spectroscopy for monitoring fabrication of integrated computational elements |
| EP2943774A4 (en) | 2014-03-21 | 2016-05-11 | Halliburton Energy Services Inc | MONOLITHIC, BAND-LIMITED, INTEGRATED CALCULATION ELEMENTS |
| MX2016015788A (es) | 2014-06-13 | 2017-04-25 | Halliburton Energy Services Inc | Elemento computacional integrado con multiples superficies selectivas de frecuencia. |
| CN104152864B (zh) * | 2014-08-22 | 2016-11-16 | 中国科学院宁波材料技术与工程研究所 | 硅薄膜的制备方法 |
| KR102075418B1 (ko) * | 2015-04-14 | 2020-02-11 | (주)디엔에프 | 니켈 함유 박막의 제조방법 및 이에 따라 제조된 니켈 함유 박막 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4504518A (en) * | 1982-09-24 | 1985-03-12 | Energy Conversion Devices, Inc. | Method of making amorphous semiconductor alloys and devices using microwave energy |
| US4883686A (en) * | 1988-05-26 | 1989-11-28 | Energy Conversion Devices, Inc. | Method for the high rate plasma deposition of high quality material |
| US5192393A (en) * | 1989-05-24 | 1993-03-09 | Hitachi, Ltd. | Method for growing thin film by beam deposition and apparatus for practicing the same |
| US5788778A (en) * | 1996-09-16 | 1998-08-04 | Applied Komatsu Technology, Inc. | Deposition chamber cleaning technique using a high power remote excitation source |
| JP2000096239A (ja) * | 1998-09-21 | 2000-04-04 | Tokuyama Corp | 誘導結合型プラズマｃｖｄ方法及びそのための誘導結合型プラズマｃｖｄ装置 |
| US6313017B1 (en) * | 1999-01-26 | 2001-11-06 | University Of Vermont And State Agricultural College | Plasma enhanced CVD process for rapidly growing semiconductor films |
| US6305314B1 (en) * | 1999-03-11 | 2001-10-23 | Genvs, Inc. | Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition |
| WO2002080244A2 (en) * | 2001-02-12 | 2002-10-10 | Asm America, Inc. | Improved process for deposition of semiconductor films |
| US20060219170A1 (en) * | 2002-01-11 | 2006-10-05 | Energy Conversion Devices, Inc. | Pore cathode for the mass production of photovoltaic devices having increased conversion efficiency |
| US6787185B2 (en) * | 2002-02-25 | 2004-09-07 | Micron Technology, Inc. | Deposition methods for improved delivery of metastable species |
| ATE374936T1 (de) * | 2003-07-25 | 2007-10-15 | Lightwind Corp | Verfahren und vorrichtung zur überwachung chemischer prozesse |
| US20080090022A1 (en) * | 2006-10-12 | 2008-04-17 | Energy Conversion Devices, Inc. | High rate, continuous deposition of high quality amorphous, nanocrystalline, microcrystalline or polycrystalline materials |
-
2008
- 2008-09-12 US US12/209,699 patent/US8252112B2/en not_active Expired - Fee Related
-
2009
- 2009-09-10 WO PCT/US2009/056445 patent/WO2010030729A2/en not_active Ceased
- 2009-09-10 EP EP09813573A patent/EP2327087A2/en not_active Withdrawn
- 2009-09-10 KR KR1020117005513A patent/KR20110053349A/ko not_active Withdrawn
- 2009-09-10 JP JP2011526952A patent/JP2012502504A/ja active Pending
- 2009-09-10 CN CN2009801358105A patent/CN102150236A/zh active Pending
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