JP2012255749A - Semiconductor device and method of measuring semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To perform accurate measurement of the analog characteristics of a semiconductor chip on a semiconductor wafer.SOLUTION: A semiconductor device comprises: a part to be measured 3 of a semiconductor chip 1, which includes a semiconductor element 3a and a circuit 3b; and a measurement circuit 4 that measures the analog characteristics of the part to be measured 3. The measurement circuit 4 is powered through probe needles Pa and Pb from an external power supply, internally generates an applied voltage for measurement, and applies it through a wiring pattern 5 to the part to be measured 3. The measurement circuit 4 inputs the output of the part to be measured 3 through the wiring pattern 5, and converts it to digital data. The measurement circuit 4 is connected through a wiring pattern 7 to a nonvolatile memory 6 of a semiconductor chip 2, where the digital data is transferred and stored. After a series of measurement completes, the digital data is retrieved from the nonvolatile memory 6. Influences of the contact resistance and stray capacitance of the probe needles are reduced, thereby allowing accurate measurement of analog characteristics.

Description

  The present invention relates to a semiconductor device having a configuration for measuring electrical characteristics of a semiconductor element or circuit formed on a semiconductor chip and a method for measuring the semiconductor device.

  When measuring semiconductor element characteristics or circuit characteristics on a semiconductor wafer, it is the mainstream to use a measuring device that accesses the semiconductor wafer, such as a prober or a tester. The electrical connection between the measuring device and the part to be measured on the semiconductor wafer is such that the probe needle is brought into contact with the electrode pad formed on the semiconductor wafer, and the probe needle is connected to the part to be measured through the electrode pad.

  In this case, since the probe needle and the electrode pad are electrically connected in a pressure contact state, depending on the contact state between them, the contact resistance increases and is likely to fluctuate, and the stray capacitance component formed between the two Are also factors that affect measurement. As semiconductor devices become more miniaturized, when measuring characteristics with a large current flowing or when measuring transient characteristics, the effects of contact resistance and capacitance components are not negligible in measuring element characteristics. It has come to influence.

  In this regard, when measuring digital characteristics as shown in Patent Document 1, the applied voltage is also small, and in the processing of digital values, strict conditions such as measurement of analog characteristics are not required, and can be realized to some extent. It was.

Japanese Patent No. 3217035

  The present invention has been made in consideration of the above circumstances, and an object thereof is to reduce as much as possible an error in measuring an analog electrical characteristic of a measured portion of a semiconductor device formed on a semiconductor wafer with a probe needle. It is an object of the present invention to provide a semiconductor device having a configuration capable of achieving the above and a method for measuring the semiconductor device.

  According to the semiconductor device of the first aspect, the analog characteristic can be measured by the measurement circuit with respect to the portion to be measured in which the element or the circuit is formed. In this case, when the power supply circuit of the measurement circuit is supplied with power from the external power supply, it converts it into a power supply for measuring analog characteristics and supplies it to the part to be measured. Converted to data. As a result, it is no longer possible to directly feed power to the measured part from the outside using a probe needle or the like, or to directly take out the output of the measured part at the time of feeding as an analog value with the probe needle. It is possible to suppress a measurement result with a large error. In addition, even when the probe needle is in contact with the measurement, power can be supplied without adversely affecting the measurement, and the data can be acquired digitally and the measurement results can be acquired without being adversely affected. Can do.

  According to the semiconductor device of the second aspect, in the above invention, since the storage unit is provided to store the digital data output from the conversion circuit, the measurement result obtained by measuring a series of analog characteristics is stored in the storage unit. By temporarily storing and separately taking out, it is possible to shorten the time for holding the probe needle and the like in contact with each other for the characteristic measurement, and it is possible to take out the analog characteristic data later after performing the measurement together. In this case, the storage unit can be arranged in the vicinity of the measurement circuit and the part to be measured, or can be arranged at a remote position.

  According to another aspect of the semiconductor device of the present invention, the portion to be measured and the measurement circuit are disposed in the first chip region, the storage portion is provided in the second chip region, and the two are connected by the wiring pattern. Therefore, the measurement result of the analog characteristics as digital data can be stored in the storage unit without separately connecting the two. Also in this case, even if the storage unit is arranged at a position away from the conversion circuit of the measurement circuit, the digital data is exchanged, so that it is less affected by the resistance component due to the wiring pattern.

  According to a semiconductor device of a fourth aspect, in the invention of the third aspect, a plurality of first chip regions are provided, and digital data output from these measurement circuits is stored in the second chip region. Since the data are stored together in the unit, the second chip region can be implemented without excessively increasing the ratio of the entire second chip region.

  According to the semiconductor device of claim 5, in the invention of claim 2, the measured part and the measurement circuit are arranged in the first chip area, the storage part is arranged in the second chip area, and the first chip area A first electrode pad connected to the output terminal of the digital signal of the measurement circuit is provided therein, a second electrode pad connected to the data input terminal of the storage unit is provided in the second chip area, and the first electrode pad is provided. Since the electrode pad and the second electrode pad are configured to be electrically connected and short-circuited by bringing a probe needle for short-circuiting into contact, in order to connect to the storage unit during measurement By connecting with the probe needle, the measurement result of the analog characteristic of the part to be measured can be stored as converted into digital data. Thereby, even when cutting between the first chip and the second chip, the cutting can be performed without being affected by the wiring.

  According to a semiconductor device of a sixth aspect, in the invention of the fifth aspect, a plurality of first chip regions each having a first electrode pad are provided, and a plurality of storage portions formed in the second chip region are provided. Digital data output from the measurement circuit of the first chip is input by short-circuiting the first electrode pad and the second electrode pad with a probe needle, and provided to store analog characteristic data Therefore, the analog characteristic data from the measurement circuits provided in the plurality of first chip regions can be stored together in the storage unit formed in the second chip region.

  According to a semiconductor device of a seventh aspect, in the inventions of the fifth and sixth aspects, the digital signal formed in the second chip region and output from each measurement circuit corresponding to the plurality of first chip regions. Since the selection circuit unit provided to selectively input the signal to the storage unit is provided, the storage unit of the second chip region is provided in the plurality of first chip regions by the selection circuit unit. Analog characteristic data from the conversion circuit can be selectively stored for each first chip area.

  According to the semiconductor device of the eighth aspect, in the inventions of the fifth to seventh aspects, since the plurality of first chip regions are arranged around the second chip region, the plurality of first chip regions are formed. Each measurement circuit in the chip area can be connected to the storage unit in the second chip area at substantially the same distance, and analog characteristic data in the surrounding first chip area can be managed in units of the storage unit. .

  According to the semiconductor device of claim 9, in the inventions of claims 9 to 7, since the plurality of first chip regions are arranged and formed in a row with respect to the second chip region, the plurality of first chips The analog characteristic data of the area can be held and managed for each column.

  According to the semiconductor device of the tenth aspect, in the inventions of the first to ninth aspects, the measurement circuit is configured to measure the direct current voltage characteristic of the measured part as an analog characteristic. Rather than measuring the analog characteristics of AC as a curve tracer, it can be measured as data when the actual DC is energized, and the measurement power output like a curve tracer is swept and applied. Data can be acquired without using an apparatus of a method.

  According to the semiconductor device of the eleventh aspect, in the invention of the first to tenth aspects, the measurement circuit is configured to measure the AC transient characteristic of the measured part as an analog characteristic. More accurate AC transient characteristics when measuring voltage can be applied without being affected by stray capacitance and the output from the measured part can be measured. Can be measured.

  According to a semiconductor device of a twelfth aspect, in the invention of any one of the first to eleventh aspects, when a power source is applied from the outside, the process of applying the power source supplied from the power source circuit to the part to be measured, Repeatedly perform the measurement steps consisting of the process of waiting until the state of the measurement unit stabilizes, the process of measuring the output signal of the measured part, and the process of providing the measurement result to the conversion circuit and converting it to a digital signal When configuring and executing the measurement step, the analog characteristic measurement power source supplied from the power supply circuit is applied in the first measurement step, the initial voltage is applied, and in the subsequent measurement step, it is preset from the previous measurement step. The applied voltage is applied by changing the applied voltage, so that the analog characteristics can be obtained by applying the applied voltage statically to the measured part, and the applied voltage is gradually changed. Thus, it is possible to obtain current characteristics at each applied voltage when an applied voltage in a predetermined range is applied, thereby obtaining digital data equivalent to that measured by a sweep type measuring device such as a curve tracer. be able to.

  According to the semiconductor device measurement method of the thirteenth aspect, there is provided a semiconductor device measurement method for measuring an analog characteristic of a part to be measured including an element or a circuit provided in the semiconductor device. Alternatively, a measurement circuit for measuring the analog characteristics of the circuit is provided, and when the power is supplied from the outside to the measurement circuit, it is converted into a power source for measuring analog characteristics and supplied to the measurement circuit, and the measurement circuit measures A conversion circuit that converts the measurement results of analog characteristics into digital signals and outputs them, and supplies power to the power supply circuit from the outside. The voltage to be changed is supplied separately, and the analog output of the measured part at the time of voltage application is converted into a digital signal by a conversion circuit. As a result, it is possible to measure the analog characteristics of the measured part using a measurement circuit provided in the semiconductor device. Unlike measurement using a probe needle, measurement is performed without being affected by contact resistance or stray capacitance. Can do.

  According to the semiconductor device measurement method of the fourteenth aspect, in the invention of the thirteenth aspect, power is supplied to the power supply circuit from an external power supply by a power supply probe needle, and digital data output from the conversion circuit is supplied by a data probe needle. Since it is possible to supply power without hindrance to the measurement of analog characteristics to the measured part, and acquisition of analog characteristic data by the probe needle can be extracted as digital data, contact resistance and stray capacitance Accurate data can be obtained without being affected.

  According to the measurement method of a semiconductor device of claim 15, in the invention of claim 13, a storage unit for storing digital data is provided in the semiconductor device, and power is supplied to the power supply circuit from an external power supply by a feeding probe needle, Since the digital data output from the conversion circuit is stored in the storage unit and the digital data stored in the storage unit is taken out after the measurement of the measured part, the measured analog characteristic data is digitally stored in the storage unit. Since it is stored as data and can be retrieved to the outside, a series of measurements can be performed at once, and analog characteristic data can be retrieved after measurement.

  According to the method for measuring a semiconductor device of claim 16, in the invention of claim 15, since the storage unit is provided corresponding to the plurality of measured units, the storage unit is collectively provided for the plurality of measured units. By providing, space saving can be achieved and data acquisition can be performed collectively.

The block diagram of the semiconductor chip which shows the 1st Embodiment of this invention Block diagram of measurement circuit Flow chart showing analog characteristic measurement process Semiconductor chip arrangement configuration diagram showing a second embodiment of the present invention Semiconductor chip arrangement configuration diagram showing a third embodiment of the present invention The block diagram of the semiconductor chip which shows the 4th Embodiment of this invention Semiconductor chip arrangement configuration diagram showing a fifth embodiment of the present invention Semiconductor chip arrangement configuration diagram showing a sixth embodiment of the present invention

(First embodiment)
Hereinafter, a first embodiment of the present invention will be described with reference to FIGS.
FIG. 1 shows a semiconductor chip 1 and a semiconductor chip 2 which are semiconductor devices formed in large numbers on a semiconductor wafer W. The semiconductor chips 1 and 2 are provided as first and second chip regions, respectively, and are positioned adjacent to each other through the scribe line Ws. The semiconductor chip 1 is provided with a large number of semiconductor elements 3a, circuits 3b, and the like, which are parts to be measured 3, and a measurement circuit 4 for measuring these analog characteristics. The measurement circuit 4 is connected to each semiconductor element 3a and the circuit 3b, which are the part to be measured 3, by a wiring pattern 5 for measurement. The measurement circuit 4 is provided with an electrode pad 4b through a wiring 4a, and is configured to receive a predetermined voltage from the external power supply by the probe needles Pa and Pb. In addition to the above configuration, the semiconductor chip 1 is provided with other semiconductor elements that constitute a circuit together with the measured portion 3.

  The semiconductor chip 2 is provided with a nonvolatile memory 6 as a storage unit. The non-volatile memory 6 is a non-volatile memory that is electrically rewritable and retains its stored state even when the power is turned off. The non-volatile memory 6 is electrically connected by a wiring pattern 7 provided between the measurement circuit 4 of the semiconductor chip 1 across the scribe line Ws of the semiconductor wafer W. The nonvolatile memory 6 is provided with a wiring pattern 6a and an electrode pad 6b so that data can be taken out from the outside. Although two electrode pads 6b are shown in the drawing, a configuration in which three or more electrode pads 6b are provided for data extraction may be employed.

  FIG. 2 shows a block configuration of the measurement circuit 4. An applied voltage adjustment circuit 8 as a power supply circuit is a circuit that generates a measurement applied voltage for the semiconductor element 3a or the circuit 3b of the unit 3 to be measured. Power is supplied through the electrode pad 4b and the wiring 4a. The applied voltage adjusting circuit 8 is configured to include a booster circuit. The applied voltage for measurement in a wide range necessary for measuring the analog characteristics of the device under test 3 from an external power source having a predetermined voltage with the clock from the clock circuit 9 as a reference. A voltage is generated and gradually changed from the initial applied voltage and applied to the measured part 3 via the wiring 5, or a pulse signal or the like for measuring the transient characteristics of the circuit 3b is applied. Has been.

  An output indicating the analog characteristics of the part to be measured is input via the wiring 5, the signal level is amplified in the amplifier circuit 10, and converted into digital data by the AD converter circuit 11 as a converter circuit. At this time, the AD conversion circuit 11 converts the analog signal into a digital signal from the sampling timing control circuit 12 at a predetermined sampling period. The sampling timing control circuit 12 generates a sampling timing signal with the clock signal supplied from the clock circuit 9. The digital signal output from the AD conversion circuit 11 is written and stored in the nonvolatile memory 6 in the memory control circuit 13. The wiring pattern 7 includes a line for transmitting data and a control line for performing control such as writing and erasing.

  In the configuration of the measurement circuit 4 described above, although not shown as a complex configuration for the semiconductor element 3a or the circuit 3b to be measured, the plurality of wiring patterns 5 are switched and connected to the measured portion 3. It is configured so that an analog characteristic signal can be input from each. Further, it is configured to store in a predetermined storage area of the nonvolatile memory 6 according to which output from the part to be measured 3 is output.

  FIG. 3 shows the procedure performed in the actual measurement of analog characteristics. In the measurement, the probe pads Pa and Pb for applying external power are brought into contact with the electrode pads 4b of the semiconductor chip 1 to bring them into a power supply state. The measurement program is started. Here, the flow in the case of measuring the current-voltage characteristic, which is the analog characteristic of the semiconductor element 3a, as the part to be measured 3 will be described.

  In the measurement circuit 4, when an external power supply is supplied, the applied voltage adjustment circuit 8 generates an initial measurement voltage for the semiconductor element 3a and applies it via the wiring 5 (S1). In a state where the initial voltage for measurement is applied, the semiconductor device 3a waits for a predetermined time until the state of the semiconductor element 3a is stabilized (S2), and then an analog characteristic output is input to the amplifier circuit 10 via the wiring 5 (S3). The AD conversion circuit 11 converts the analog characteristic signal amplified by the amplification circuit 10 into digital data and outputs the digital data to the memory control circuit 13 (S4). The memory control circuit 13 stores analog characteristic digital data at a predetermined address of the nonvolatile memory 6 (S5).

  Thereafter, the applied voltage adjustment circuit 8 generates the measurement initial voltage by changing it to a measurement voltage that is changed by a predetermined voltage, and applies it again to the semiconductor element 3a (S6, S7). Then, by repeatedly executing steps S2 to S5 described above, a signal having an analog characteristic when the changed measurement voltage is applied is detected and converted into digital data, which is then stored in the nonvolatile memory 6. When all patterns of measurement voltage application are completed in this manner (YES in S6), a series of analog characteristic digital data is stored in the nonvolatile memory 6 and the measurement process is terminated.

  Then, when there is a measurement item of the next analog characteristic, the analog characteristic of the semiconductor element 3a is similarly measured according to another program, and when the measurement is completed, the analog of another semiconductor element 3a or the circuit 3b is measured. A characteristic measurement process is performed. Here, as an analog characteristic, when a DC static voltage is applied and the current value at that time is measured, or a pulse signal for measuring an AC dynamic characteristic is applied and the current value is The case where an output is measured etc. is assumed and it is comprised so that the applied voltage corresponding to these may be produced | generated and a measurement process may be performed.

  Examples of analog characteristics such as direct current voltage characteristics include current-voltage characteristics in the off state, reverse characteristics, and current-voltage characteristics in the on-state. Further, as the AC analog characteristics, various characteristics such as switching characteristics and phase margins can be measured.

  In this way, when the measurement of the analog characteristics is completed for all the measured parts 3 in the semiconductor chip 1, a series of measurement processes is completed. The measured digital data of the analog characteristics of each measured part 3 is stored in the nonvolatile memory 6. Note that the measurement process may be configured to perform a series of measurements once, or to obtain highly reliable data by repeating the same measurement process a plurality of times.

  Thereafter, the digital data having analog characteristics stored therein can be taken out by bringing the probe needle into contact with the electrode pads 6b, 6b for taking out data provided in the nonvolatile memory 6. At this time, since the information to be read is digital data, it can be acquired in a lump in a state where it is hardly affected by the contact resistance or stray capacitance by the probe needle.

  According to the present embodiment as described above, the measurement circuit 4 that measures the analog characteristics of the measurement target portion 3 of the semiconductor chip 1 formed on the semiconductor wafer W and converts it into digital data, and the semiconductor as digital data. Since the nonvolatile memory measurement 6 of the chip 2 is stored, it is possible to generate an applied voltage for measuring the analog characteristics by the measurement circuit 4 and sequentially apply the voltage simply by supplying a predetermined voltage from the probe needle. Unlike the case where the applied voltage for measurement is directly applied from the probe needle, the measurement can be performed with the influence of the contact resistance and stray capacitance being reduced as much as possible.

  In the measurement by the inventors, in the measurement of analog characteristics using a probe according to the conventional method, a measurement error of about 10 to 20% due to the influence of contact resistance or parasitic capacitance is reduced to about several percent. Has been able to. With regard to the parasitic capacitance, what was about 100 pF in the conventional method can be suppressed to about 1 pF according to the configuration of the present embodiment.

  In addition, since the analog characteristic signal of the measurement result is stored in a state converted into digital data, the data can be acquired without being affected by contact resistance or stray capacitance.

  And since the digital data of analog characteristics are collectively stored in the nonvolatile memory 6, the data acquisition failure due to the state of contact failure or the like is not performed during that time because the contact portion such as the probe needle is not used. Without this, quick and accurate measurement can be performed, and data can be quickly and collectively extracted.

  Further, since the analog characteristics of the semiconductor element 3a or the circuit 3b of the measured part 3 are measured by the processing procedure as described above, as a result, data equivalent to that measured by a measuring device such as a curve tracer or a parameter analyzer is obtained. In addition, the measurement system can be simplified and the cost can be reduced, and data processing can be easily performed as digital data by directly importing the data into a personal computer or the like.

  In the above embodiment, the measurement process by the measurement circuit 4 can be performed by a program by the control function unit as a program process flow shown in FIG. 3, or can be realized by a hardware configuration. is there.

(Second Embodiment)
FIG. 4 shows a second embodiment of the present invention. The difference from the first embodiment is that a plurality of semiconductor chips 1 (1a to 1d) are compared with the nonvolatile memory 6 provided in the semiconductor chip 2. FIG. 4) are arranged around the periphery.

  The semiconductor chips 1 a to 1 d are the same as the semiconductor chip 1 shown in the first embodiment, and are arranged at adjacent positions via the scribe lines Ws on the four sides of the semiconductor chip 2. In addition to the nonvolatile memory 6, the semiconductor chip 2 is provided with a selector circuit 14 as a selection circuit unit. The selector circuit 14 is connected to each of the measurement circuits 4 of the four semiconductor chips 1a to 1d by wiring patterns 7a to 7d. The selector circuit 14 performs switching selection inside the circuit and transfers the data to the nonvolatile memory 6 to chip. Remember every time.

  When measuring the analog characteristics of the measured part 3 of each of the semiconductor chips 1a to 1d, the external power source is brought into contact with the probe needles Pa and Pb and the electrode pads 4b and 4b of the measuring circuit 4 as in the first embodiment. This is done by supplying power. In the measurement circuit 4 of each of the semiconductor chips 1a to 1d, when an external power supply is supplied, measurement of analog characteristics of the semiconductor element 3a or the circuit 3b, which is the part to be measured 3 in the chip, is started.

  In the measurement of the analog characteristics, the applied voltage for measurement is sequentially applied according to the procedure shown in FIG. 3, and the measurement result obtained when each applied voltage for measurement is applied is converted into digital data and transferred to the semiconductor chip 2. In the semiconductor chip 2, storage addresses are distributed according to the semiconductor chips 1 a to 1 d input in the selector circuit 14, transferred to the nonvolatile memory 6 and stored therein. Digital data of analog characteristics of the measured part 3 stored in the nonvolatile memory 6 for each of the semiconductor chips 1a to 1d can be taken out by contacting the probe pads with the electrode pads 6b and 6b.

  According to the second embodiment as described above, the digital data of the analog characteristics of the measured portions 3 of the plurality of semiconductor chips 1a to 1d is stored in the nonvolatile memory 6 collectively for each chip by providing the selector circuit 14. Therefore, in addition to the effects of the first embodiment, analog characteristic data can be stored in a lump with a configuration in which one semiconductor chip 2 is provided in four semiconductor chips 1a to 1d.

  In addition, since five chips are arranged in a cross shape in one block in this way, even when other similar blocks are arranged, a large number of blocks can be arranged without generating a wasteful space. be able to.

  In this embodiment, four semiconductor chips 1a to 1d are arranged for one semiconductor chip 2. However, the present invention is not limited to this, and two or three chips may be used, or five chips. A configuration in which the blocks are arranged may be used, and for example, a group of blocks may be configured by arranging eight blocks.

(Third embodiment)
FIG. 5 shows a third embodiment of the present invention. The difference from the second embodiment is that four semiconductor chips 1a to 1d are arranged in a line. In this case, the semiconductor chips 1a and 1b are arranged on one side of both sides of the semiconductor chip 2, and the semiconductor chips 1c and 1d are arranged on the opposite side. The measurement circuit 4 of each semiconductor chip 1a to 1d is electrically connected to the selector circuit 14 of the semiconductor chip 2 via wiring patterns 7a to 7d, respectively. The electrode pads 4b of the semiconductor chips 1a to 1d and the electrode pads 6b of the semiconductor chip 2 are not shown.

  Since the configuration as described above is employed, the operational effects in the first embodiment can be obtained, and the operational effects in the second embodiment can also be obtained. Similarly, when a plurality of blocks are arranged, they can be arranged without a gap.

In this embodiment as well, not only the four semiconductor chips 1a to 1d but also a desired number of semiconductor chips 1 can be arranged.
The wiring patterns 7a to 7d are directly connected to the selector circuit 14 of the semiconductor chip 2. For example, in the semiconductor chip 1a (1d), the wiring patterns 7a to 7d are connected to the measuring circuit 4 of the semiconductor chip 1b (1c). The data may be transferred to the selector circuit 14 via the measurement circuit 4 of the semiconductor chip 1b (1c).

(Fourth embodiment)
FIG. 6 shows a fourth embodiment of the present invention. The difference from the first embodiment is that instead of providing the semiconductor chip 2, digital data having analog characteristics is directly acquired. That is, the measurement circuit 4 of the semiconductor chip 1 has a configuration in which, for example, two wiring patterns 4c for extracting data are led out and electrode pads 4d are provided at the tips thereof. The electrode pad 4d is provided so that probe needles Pc and Pd for acquiring digital data can come into contact with each other.

  With the above configuration, when the measurement result obtained when applying each measurement applied voltage is converted into digital data in the measurement of analog characteristics, the digital data can be extracted to the outside by the probe needles Pc and Pd. In this way, the analog characteristic data sequentially measured can be directly taken out as digital data by the probe needles Pc and Pd.

In this case, the configuration in which the external power is supplied by the probe needles Pa and Pb and the measurement data is taken out by the probe needles Pc and Pd is the same in terms of the measurement of the semiconductor chip on the semiconductor wafer W by the conventional probe needles. However, the external power supply is converted into a measurement applied voltage in the measurement circuit 4 and applied to the measured part 3, and the measurement result at that time can be taken out in a state converted into digital data. Accurate analog characteristics can be measured by preventing the influence of contact resistance and stray capacitance, and the influence of the extracted data from noise.
Note that the number of data extraction probes Pc and Pd used for measurement is not limited to two, and a plurality of probes can be used as necessary.

(Fifth embodiment)
FIG. 7 shows a fifth embodiment of the present invention. The difference from the first embodiment is that instead of providing the wiring pattern 7 between the semiconductor chips 1 and 2, a short-circuit state for data transfer is provided. The configuration is such that measurement is performed by connecting the probe needles Pe and Pf to be formed.

  In this case, in the semiconductor chip 1, a wiring pattern 4c is provided at a portion where the digital data of the measurement circuit 4 is output, and an electrode pad 4d is formed at the tip thereof. Further, in the semiconductor chip 2, a wiring pattern 6a is provided at a portion for taking in data of the nonvolatile memory 6, and an electrode pad 6b is formed at the tip thereof. The probe needles Pe and Pf that are electrically short-circuited to the electrode pads 4 d and 6 b are brought into contact with each other, and the digital data is transferred from the measurement circuit 4 to the nonvolatile memory 6.

  Here, a pair of electrode pads 4d and 6b is provided, but the number of electrode pads necessary for data transfer is provided, and a probe needle that is short-circuited between them is connected to connect the two. You should do it.

  According to the fifth embodiment as described above, the same operational effects as those of the first embodiment can be obtained, and no wiring pattern is provided between the semiconductor chips 1 and 2, so that the wiring pattern straddling the scribe line Ws. Compared to the configuration of the second embodiment in which the semiconductor chip 1 is scribed, even when each semiconductor chip 1 is scribed and separated, it is possible to avoid the occurrence of a short-circuit state in the wiring pattern portion in the semiconductor chip 1 after cutting. It can be used as a product later.

(Sixth embodiment)
FIG. 8 shows a sixth embodiment of the present invention. The difference from the fourth embodiment is that the electrical connection between the semiconductor chips 1 and 2 is not related to the wiring pattern, but the probe needles Pc and Pd. A short-circuit state is formed by contact of the above. When power is supplied from an external power source (not shown) to any of the semiconductor chips 1a to 1d to be measured, the measurement circuit 4 starts the same measurement process as described above. The selector circuit 14 inputs analog data digital data output from the measurement circuit 4 of any one of the semiconductor chips 1 a to 1 d short-circuited by the probe needles Pc and Pd and stores the digital data in the nonvolatile memory 6.
Also according to the sixth embodiment, the same effects as those of the fourth embodiment can be obtained, and the effects of the fifth embodiment can also be obtained.

(Other embodiments)
In addition, this invention is not limited only to one embodiment mentioned above, It can apply to various embodiment in the range which does not deviate from the summary, For example, it can deform | transform or expand as follows. .

  The semiconductor chip 1 has been described as being provided with the semiconductor element 3a and the circuit 3b as the part to be measured 3. However, the present invention is not limited to this, and the semiconductor chip 1 alone or the circuit 3b alone may be used. In addition, although a configuration in which a plurality of parts to be measured 3 are provided is shown, the part to be measured can be applied to a structure in which only one semiconductor element 3a or circuit 3b is arranged.

As the measurement contents of the analog characteristics, the case where the current-voltage characteristics which are static characteristics and the transient characteristics which are dynamic characteristics are measured has been shown, but the present invention can also be applied when acquiring data of other analog characteristics.
Each said embodiment can also be made into embodiment by a combination with other embodiment.

  In the drawings, 1, 1a to 1d are semiconductor chips (first chip areas), 2 is a semiconductor chip (second chip areas), 3 is a part to be measured, 3a is a semiconductor element, 3b is a circuit, 4 is a measurement circuit 4b is an electrode pad, 4d is an electrode pad (first electrode pad), 6 is a nonvolatile memory (storage unit), 6b is an electrode pad (second electrode pad), 7, 7a to 7d are wiring patterns, 8 Is an applied voltage adjustment circuit (power supply circuit), 11 is an AD conversion circuit (conversion circuit), 13 is a memory control circuit, 14 is a selector circuit (selection circuit unit), and 14b is an electrode pad (second electrode pad).

Claims (16)

A device under test in which at least one element or circuit serving as a device under test of analog characteristics is formed, and a measurement circuit for measuring the analog characteristics of the device or circuit of the device under test;
The measurement circuit is a power supply circuit that outputs an applied voltage for measuring an analog characteristic to the measured part when power is supplied from the outside;
A conversion circuit that takes in the output of the measured part according to the applied voltage for measuring the analog characteristics, converts it into digital data, and outputs it,
A semiconductor device comprising: The semiconductor device according to claim 1,
A semiconductor device comprising: a storage unit for storing digital data of the measurement result of the analog characteristics output from the conversion circuit. The semiconductor device according to claim 2,
A first chip region in which the measurement target and the measurement circuit are formed;
A second chip region in which the storage unit is formed;
And a wiring pattern for electrically connecting a digital signal output portion of the measurement circuit in the first chip region and a data input portion of the storage portion in the second chip region. Semiconductor device. The semiconductor device according to claim 3.
A plurality of the first chip regions;
The storage unit formed in the second chip region is provided to store digital data output from the measurement circuit of the plurality of first chips when the digital data is input through the wiring pattern, respectively. A semiconductor device characterized in that the semiconductor device is provided. The semiconductor device according to claim 2,
A first chip region in which the measurement target and the measurement circuit are formed;
A second chip region in which the storage unit is formed;
A first electrode pad formed in the first chip region and connected to an output terminal of a digital signal of the measurement circuit;
A second electrode pad formed in the second chip region and connected to a data input terminal of the storage unit,
A semiconductor device, wherein a short-circuit probe needle is brought into contact with each of the first electrode pad and the second electrode pad so that the two can be electrically connected to each other. The semiconductor device according to claim 5,
A plurality of the first chip regions including the first electrode pads;
In the storage unit formed in the second chip region, the digital data output from the measurement circuit of the plurality of first chips is between the first electrode pad and the second electrode pad, respectively. A semiconductor device, which is provided so as to be inputted by being short-circuited by a probe needle and to store the analog characteristic data. The semiconductor device according to claim 5 or 6,
A selection provided to selectively input a digital signal output from each of the measurement circuits corresponding to the plurality of first chip regions to the storage unit, which is formed in the second chip region. A semiconductor device comprising a circuit portion. The semiconductor device according to any one of claims 5 to 7,
The semiconductor device according to claim 1, wherein the plurality of first chip regions are arranged and formed around the second chip region. The semiconductor device according to any one of claims 5 to 7,
The plurality of first chip regions are arranged and formed in a row with respect to the second chip region. The semiconductor device according to claim 1,
2. The semiconductor device according to claim 1, wherein the measurement circuit is configured to measure a direct current voltage characteristic of the measurement target portion as the analog characteristic. The semiconductor device according to claim 1,
2. The semiconductor device according to claim 1, wherein the measuring circuit is configured to measure an AC transient characteristic of the measurement target portion as the analog characteristic. The semiconductor device according to claim 1,
The measurement circuit includes:
When power is applied from the outside,
A process of applying power supplied from the power supply circuit to the device under test, a process of waiting until the state of the device under test stabilizes, a process of measuring an output signal of the device under test, and a measurement result It is configured to repeatedly execute a measurement step consisting of a process of giving to the conversion circuit and converting it into a digital signal,
When executing the measurement step, an analog characteristic measurement power source supplied from the power supply circuit is applied in the first measurement step, and an initial voltage is applied in the subsequent measurement step, which is preset from the previous measurement step. A semiconductor device, wherein an applied voltage changed by a voltage is applied. A method for measuring a semiconductor device for measuring an analog characteristic of a part to be measured including an element or a circuit provided in a semiconductor device,
The semiconductor device is provided with a measurement circuit for measuring an analog characteristic of the element or circuit of the part to be measured, and when the measurement circuit receives power from the outside, the measurement circuit converts the analog circuit to a power source for measuring the analog characteristic. A power supply circuit that supplies power, and a conversion circuit that converts the measurement result of the analog characteristics measured by the measurement circuit into a digital signal and outputs the digital signal,
By supplying power to the power supply circuit from the outside, the measurement circuit supplies a voltage that is changed in multiple stages as a power supply for measuring the analog characteristics of the measured part, and the power supply circuit is supplied with the voltage at the time of voltage application. A method for measuring a semiconductor device, wherein the analog output of a measurement unit is converted into a digital signal by the conversion circuit and output as digital data. The method for measuring a semiconductor device according to claim 13,
Supply power from the external power supply to the power supply circuit by a power supply probe needle,
A method for measuring a semiconductor device, characterized in that digital data output from the conversion circuit is extracted by a data probe needle. The method for measuring a semiconductor device according to claim 13,
A storage unit for storing digital data in the semiconductor device;
Supply power from the external power supply to the power supply circuit by a power supply probe needle,
The digital data output from the measurement circuit is stored in the storage unit,
A method for measuring a semiconductor device, comprising: taking out digital data stored in the storage unit after measurement of the measurement target unit is completed. In the measuring method of the semiconductor device according to claim 15,
The method of measuring a semiconductor device, wherein the storage unit is provided corresponding to a plurality of measured parts.

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