JP2012224533A - 多結晶シリコン製造装置、及びこれを用いた多結晶シリコンの製造方法 - Google Patents
多結晶シリコン製造装置、及びこれを用いた多結晶シリコンの製造方法 Download PDFInfo
- Publication number
- JP2012224533A JP2012224533A JP2011217187A JP2011217187A JP2012224533A JP 2012224533 A JP2012224533 A JP 2012224533A JP 2011217187 A JP2011217187 A JP 2011217187A JP 2011217187 A JP2011217187 A JP 2011217187A JP 2012224533 A JP2012224533 A JP 2012224533A
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- reaction tube
- silicon
- pressure
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/24—Stationary reactors without moving elements inside
- B01J19/2415—Tubular reactors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
- B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/0053—Details of the reactor
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
- C30B28/14—Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00051—Controlling the temperature
- B01J2219/00054—Controlling or regulating the heat exchange system
- B01J2219/00056—Controlling or regulating the heat exchange system involving measured parameters
- B01J2219/00065—Pressure measurement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00051—Controlling the temperature
- B01J2219/00074—Controlling the temperature by indirect heating or cooling employing heat exchange fluids
- B01J2219/00087—Controlling the temperature by indirect heating or cooling employing heat exchange fluids with heat exchange elements outside the reactor
- B01J2219/00094—Jackets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00051—Controlling the temperature
- B01J2219/0015—Controlling the temperature by thermal insulation means
- B01J2219/00155—Controlling the temperature by thermal insulation means using insulating materials or refractories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00191—Control algorithm
- B01J2219/00193—Sensing a parameter
- B01J2219/00195—Sensing a parameter of the reaction system
- B01J2219/00198—Sensing a parameter of the reaction system at the reactor inlet
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00191—Control algorithm
- B01J2219/00193—Sensing a parameter
- B01J2219/00195—Sensing a parameter of the reaction system
- B01J2219/00202—Sensing a parameter of the reaction system at the reactor outlet
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00191—Control algorithm
- B01J2219/00211—Control algorithm comparing a sensed parameter with a pre-set value
- B01J2219/0022—Control algorithm comparing a sensed parameter with a pre-set value calculating difference
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00191—Control algorithm
- B01J2219/00222—Control algorithm taking actions
- B01J2219/00227—Control algorithm taking actions modifying the operating conditions
- B01J2219/00229—Control algorithm taking actions modifying the operating conditions of the reaction system
- B01J2219/00236—Control algorithm taking actions modifying the operating conditions of the reaction system at the reactor outlet
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/02—Apparatus characterised by their chemically-resistant properties
- B01J2219/025—Apparatus characterised by their chemically-resistant properties characterised by the construction materials of the reactor vessel proper
- B01J2219/0254—Glass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/02—Apparatus characterised by their chemically-resistant properties
- B01J2219/025—Apparatus characterised by their chemically-resistant properties characterised by the construction materials of the reactor vessel proper
- B01J2219/0263—Ceramic
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Combustion & Propulsion (AREA)
- General Chemical & Material Sciences (AREA)
- Silicon Compounds (AREA)
Abstract
【解決手段】 内部にシリコン粒子を含む反応管と、前記反応管内のシリコン粒子に流動ガスを供給する流動ガス供給部と、前記反応管で発生されたガスを排出するガス排出部と、前記ガス排出部あるいは前記流動ガス供給部内に装着された圧力センサーと、前記圧力センサーで測定された圧力が基準圧力値以上の場合、前記反応管の内部に形成された多結晶シリコンを外部に排出させる粒子排出口と、を含む。
【選択図】 図4
Description
次に、本発明の実施形態による流動層反応器の組み立て過程について詳細に説明する。
200 第1ボディ部
250 第1反応管
300 第2ボディ部
270 支持リング
350 第2反応管
400 底面部
410 基底プレート
420 第1プレート
430 第2プレート
440 第3プレート
500 流動層反応器
600 流動ガス供給部
650 反応ガス供給部
700 ヒーター
800 電極
Claims (13)
- 内部にシリコン粒子を含む反応管と、
前記反応管内のシリコン粒子に流動ガスを供給する流動ガス供給部と、
前記反応管で発生されたガスを排出するガス排出部と、
前記ガス排出部あるいは前記流動ガス供給部内に装着された圧力センサーと、
前記圧力センサーで測定された圧力が基準圧力値以上の場合、前記反応管の内部に形成された多結晶シリコンを外部に排出させるようにする粒子排出口と、を含む多結晶シリコン製造装置。 - 前記圧力センサーは、前記ガス排出部及び前記流動ガス供給部内にそれぞれ装着され、
前記流動ガス供給部内で測定された第1圧力と前記ガス排出部で測定された第2圧力との圧力差が基準圧力値以上の場合、前記反応管の内部に形成された多結晶シリコンを外部に排出させる、請求項1に記載の多結晶シリコン製造装置。 - 前記第1圧力の値と第2圧力の値とを比べて圧力差が基準圧力値以上のとき、前記粒子排出口を動作させて前記多結晶シリコンを外部に排出させるようにする制御部をさらに含む、請求項2に記載の多結晶シリコン製造装置。
- 前記反応管の材質は、石英、シリカ、窒化ケイ素、窒化ホウ素、ジルコニア、イットリア、炭化ケイ素、黒鉛、シリコン、ガラス質炭素を構成するグループから選択される、請求項1に記載の多結晶シリコン製造装置。
- 前記反応管の材質が炭素を含む材質の場合、前記反応管の内壁面は、シリコン、シリカ、石英、窒化ケイ素のうち少なくとも1つによってライニングされる、請求項4に記載の多結晶シリコン製造装置。
- 前記流動ガス供給部が組み立てられる底面部をさらに含み、
前記底面部は、順次に積層された基底プレートと、第1プレートと、第2プレートと、第3プレートとを含む、請求項1に記載の多結晶シリコン製造装置。 - 前記第2プレートと前記第3プレートとのそれぞれは、複数の単位プレートを含む、請求項6に記載の多結晶シリコン製造装置。
- 前記第2プレートの周りを囲む絶縁リングが設けられる、請求項6または7に記載の多結晶シリコン製造装置。
- 前記第2プレートの端と前記基底プレートの一面とが離隔される、請求項6に記載の多結晶シリコン製造装置。
- 前記基底プレートと前記第2プレートとの端の間に、前記第1プレートの一部分が位置する、請求項6に記載の多結晶シリコン製造装置。
- 反応管の内部に反応ガスと流動ガスとを供給してシリコン析出反応を起こすステップと、
前記反応管の内部の第1領域の第1圧力を測定するステップと、
前記第1領域と異なる前記反応管の内部の第2領域の第2圧力を測定するステップと、
前記第1圧力と前記第2圧力との圧力差が基準圧力値以上の場合、前記反応管の内部に生成された多結晶シリコンを外部に排出するステップと、を含む多結晶シリコン製造方法。 - 前記第1領域は、前記反応管内に前記流動ガスあるいは反応ガスが注入される領域である、請求項11に記載の多結晶シリコン製造方法。
- 前記第2領域は、前記シリコン析出反応の際に発生したガスが外部に排出される領域である、請求項11に記載の多結晶シリコン製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110036719A KR101329032B1 (ko) | 2011-04-20 | 2011-04-20 | 다결정 실리콘 제조장치 및 이를 이용한 다결정 실리콘의 제조방법 |
KR10-2011-0036719 | 2011-04-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012224533A true JP2012224533A (ja) | 2012-11-15 |
JP5295334B2 JP5295334B2 (ja) | 2013-09-18 |
Family
ID=44789342
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011217187A Expired - Fee Related JP5295334B2 (ja) | 2011-04-20 | 2011-09-30 | 多結晶シリコン製造装置、及びこれを用いた多結晶シリコンの製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8377208B2 (ja) |
EP (1) | EP2514520A1 (ja) |
JP (1) | JP5295334B2 (ja) |
KR (1) | KR101329032B1 (ja) |
CN (1) | CN102745693A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2022506060A (ja) * | 2018-12-17 | 2022-01-17 | ワッカー ケミー アクチエンゲゼルシャフト | 多結晶シリコンの製造方法 |
JP2022545149A (ja) * | 2019-06-26 | 2022-10-26 | エックス-エナジー, エルエルシー | 反応中に粒子を抽出する流動床反応器システム |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5627703B2 (ja) | 2009-11-18 | 2014-11-19 | アールイーシー シリコン インコーポレイテッド | 流動床反応器 |
US20130129570A1 (en) * | 2011-04-20 | 2013-05-23 | Siliconvalue Llc. | Polycrystal silicon manufacturing apparatus |
US9587993B2 (en) * | 2012-11-06 | 2017-03-07 | Rec Silicon Inc | Probe assembly for a fluid bed reactor |
CN103172381B (zh) * | 2013-04-08 | 2014-03-26 | 无锡中彩科技有限公司 | 冷壁流化床的制备方法及其应用 |
US9585199B2 (en) * | 2013-10-30 | 2017-02-28 | Atomic Energy Council—Institute of Nuclear Energy Research | Hybrid heating apparatus applicable to the moving granular bed filter |
JP6789257B2 (ja) * | 2018-02-28 | 2020-11-25 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、およびプログラム |
CN110003962B (zh) * | 2019-05-06 | 2021-04-30 | 沈阳航空航天大学 | 一种轴向固定床甲烷化反应器 |
CN114225849A (zh) * | 2021-12-06 | 2022-03-25 | 亚洲硅业(青海)股份有限公司 | 一种硅颗粒生产装置及方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000327379A (ja) * | 1999-05-11 | 2000-11-28 | Kawasaki Heavy Ind Ltd | 充填層式冷却方法及び装置 |
JP2009525937A (ja) * | 2006-02-07 | 2009-07-16 | コリア リサーチ インスティチュート オブ ケミカル テクノロジー | 粒状多結晶シリコン製造用高圧流動層反応器 |
JP2012076078A (ja) * | 2010-10-01 | 2012-04-19 | Siliconvalue Llc | 流動層反応器 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4642227A (en) | 1982-08-20 | 1987-02-10 | California Institute Of Technology | Reactor for producing large particles of materials from gases |
DE4304405A1 (de) * | 1993-02-15 | 1994-08-18 | Bayer Ag | Verfahren zur kontinuierlichen Wirbelschichtagglomeration |
US5363812A (en) * | 1994-02-18 | 1994-11-15 | The Babcock & Wilcox Company | Method and apparatus for controlling the bed temperature in a circulating fluidized bed reactor |
US5533471A (en) * | 1994-08-17 | 1996-07-09 | A. Ahlstrom Corporation | fluidized bed reactor and method of operation thereof |
DE4443773A1 (de) * | 1994-12-08 | 1996-06-13 | Basf Ag | Partikelverwirbelungsverfahren und Vorrichtung zu dessen Durchführung |
DE19606214B4 (de) * | 1996-02-20 | 2006-06-01 | Abb Research Ltd. | Verfahren und Einrichtung zur Steuerung des Austritts eines fluidisierten Feststoffs aus einem Behälter |
DE19735378A1 (de) | 1997-08-14 | 1999-02-18 | Wacker Chemie Gmbh | Verfahren zur Herstellung von hochreinem Siliciumgranulat |
US6255411B1 (en) * | 1999-04-07 | 2001-07-03 | Union Carbide Chemicals & Plastics Technology Corporation | Reactor product discharge system |
DE19949659C2 (de) * | 1999-10-14 | 2002-06-13 | Wagner Internat Ag Altstaetten | Verfahren und Vorrichtung zum Bestimmen einer Pulvermenge oder Pulvermengenänderung in einem Behälter |
FR2878453B1 (fr) * | 2004-11-30 | 2007-03-16 | Centre Nat Rech Scient Cnrse | Dispositif de fourniture de vapeurs d'un precurseur solide a un appareil de traitement |
US20080220166A1 (en) | 2005-07-19 | 2008-09-11 | Paul Edward Ege | Silicon Spout-Fluidized Bed |
KR100661284B1 (ko) * | 2006-02-14 | 2006-12-27 | 한국화학연구원 | 유동층 반응기를 이용한 다결정실리콘 제조 방법 |
KR100813131B1 (ko) * | 2006-06-15 | 2008-03-17 | 한국화학연구원 | 유동층 반응기를 이용한 다결정 실리콘의 지속 가능한제조방법 |
KR100783667B1 (ko) | 2006-08-10 | 2007-12-07 | 한국화학연구원 | 입자형 다결정 실리콘의 제조방법 및 제조장치 |
JP5071473B2 (ja) * | 2007-03-02 | 2012-11-14 | 株式会社Ihi | 循環流動層炉における粒子循環量制御装置 |
DE102007021003A1 (de) | 2007-05-04 | 2008-11-06 | Wacker Chemie Ag | Verfahren zur kontinuierlichen Herstellung von polykristallinem hochreinen Siliciumgranulat |
US8116992B1 (en) * | 2009-04-27 | 2012-02-14 | The United States Of America As Represented By The United States Department Of Energy | Apparatus and method for determining solids circulation rate |
-
2011
- 2011-04-20 KR KR1020110036719A patent/KR101329032B1/ko not_active IP Right Cessation
- 2011-09-28 US US13/247,587 patent/US8377208B2/en not_active Expired - Fee Related
- 2011-09-30 JP JP2011217187A patent/JP5295334B2/ja not_active Expired - Fee Related
- 2011-09-30 CN CN2011102944502A patent/CN102745693A/zh active Pending
- 2011-10-07 EP EP11184327A patent/EP2514520A1/en not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000327379A (ja) * | 1999-05-11 | 2000-11-28 | Kawasaki Heavy Ind Ltd | 充填層式冷却方法及び装置 |
JP2009525937A (ja) * | 2006-02-07 | 2009-07-16 | コリア リサーチ インスティチュート オブ ケミカル テクノロジー | 粒状多結晶シリコン製造用高圧流動層反応器 |
JP2012076078A (ja) * | 2010-10-01 | 2012-04-19 | Siliconvalue Llc | 流動層反応器 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2022506060A (ja) * | 2018-12-17 | 2022-01-17 | ワッカー ケミー アクチエンゲゼルシャフト | 多結晶シリコンの製造方法 |
JP7239692B2 (ja) | 2018-12-17 | 2023-03-14 | ワッカー ケミー アクチエンゲゼルシャフト | 多結晶シリコンの製造方法 |
JP2022545149A (ja) * | 2019-06-26 | 2022-10-26 | エックス-エナジー, エルエルシー | 反応中に粒子を抽出する流動床反応器システム |
JP7342151B2 (ja) | 2019-06-26 | 2023-09-11 | エックス-エナジー, エルエルシー | 反応中に粒子を抽出する流動床反応器システム |
Also Published As
Publication number | Publication date |
---|---|
CN102745693A (zh) | 2012-10-24 |
JP5295334B2 (ja) | 2013-09-18 |
EP2514520A1 (en) | 2012-10-24 |
KR20120119010A (ko) | 2012-10-30 |
US20120269712A1 (en) | 2012-10-25 |
US8377208B2 (en) | 2013-02-19 |
KR101329032B1 (ko) | 2013-11-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5295334B2 (ja) | 多結晶シリコン製造装置、及びこれを用いた多結晶シリコンの製造方法 | |
KR100813131B1 (ko) | 유동층 반응기를 이용한 다결정 실리콘의 지속 가능한제조방법 | |
KR100661284B1 (ko) | 유동층 반응기를 이용한 다결정실리콘 제조 방법 | |
KR100756310B1 (ko) | 입자형 다결정실리콘 제조용 고압 유동층반응기 | |
KR101329030B1 (ko) | 유동층 반응기 | |
KR101329033B1 (ko) | 유동층 반응기 | |
KR101356391B1 (ko) | 다결정 실리콘 제조장치 | |
KR101329035B1 (ko) | 유동층 반응기 | |
US20130129570A1 (en) | Polycrystal silicon manufacturing apparatus | |
KR101450532B1 (ko) | 다결정 실리콘 제조장치 | |
CA3003661C (en) | Process and apparatus for production of granular polycrystalline silicon | |
WO2016108955A1 (en) | Silicon deposition reactor with bottom seal arrangement | |
KR20130124810A (ko) | 유동층 반응기 | |
KR20130064988A (ko) | 반응관을 포함하는 유동층 반응기 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130430 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130521 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130611 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |