JP2012222219A - Light-emitting device - Google Patents

Light-emitting device Download PDF

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JP2012222219A
JP2012222219A JP2011088000A JP2011088000A JP2012222219A JP 2012222219 A JP2012222219 A JP 2012222219A JP 2011088000 A JP2011088000 A JP 2011088000A JP 2011088000 A JP2011088000 A JP 2011088000A JP 2012222219 A JP2012222219 A JP 2012222219A
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extending
extending portion
electrode
main surface
light emitting
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JP5741164B2 (en
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Hidetoshi Tanaka
秀俊 田中
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Nichia Chemical Industries Ltd
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Abstract

PROBLEM TO BE SOLVED: To reduce deviation of the current density distribution on a light extraction surface.SOLUTION: A light-emitting device 100 according to the present invention comprises: a semiconductor part 10 having a first primary surface and a second primary surface; a first electrode 20 disposed on the first primary surface; and a second electrode 30 disposed on the second primary surface. The first primary surface has a rectangular shape. The first electrode 20 has a first connection part 21 and a second connection part 22 provided on a one side 12a side of a pair of facing sides of the rectangle, a first extending part 23 extending toward the other side from the first connection part, a second extending part 24 extending toward the other side from the second connection part, two third extending parts 25 extending toward the second extending part from the first extending part, and a fourth extending part 26 extending toward the first extending part from the second extending part in the region sandwiched between the two third extending parts. The distances between the third extending parts 25 and the fourth extending part 26 become narrower with distance from the first and second connection parts.

Description

本発明は、発光素子に関し、特に、ｐ側電極とｎ側電極とが対向して半導体部を挟んで配置された発光素子に関する。   The present invention relates to a light-emitting element, and more particularly to a light-emitting element in which a p-side electrode and an n-side electrode face each other and a semiconductor portion is interposed therebetween.

従来から、発光素子は、光取出し面内で均一な発光分布であることが求められ、そのために光取出し面内における電流密度が均一であることが求められている。例えば、図５に示すように、ｐ側電極とｎ側電極とが同一面上に設けられた同一電極構造の発光素子では、ｐ側電極とｎ側電極との間で対向する部分を多くさせるとともに等間隔の電極パターンにすることで、光取出し面での電流密度分布の偏りを小さくでき、均一な発光分布となることが開示されている（例えば、特許文献１参照）。   Conventionally, a light emitting element is required to have a uniform light emission distribution in the light extraction surface, and for that reason, a current density in the light extraction surface is required to be uniform. For example, as shown in FIG. 5, in a light-emitting element having the same electrode structure in which the p-side electrode and the n-side electrode are provided on the same surface, the portion facing the p-side electrode and the n-side electrode is increased In addition, it is disclosed that by making the electrode pattern at equal intervals, the bias of the current density distribution on the light extraction surface can be reduced, and the light emission distribution becomes uniform (see, for example, Patent Document 1).

特開２００２−３１９７０４号公報JP 2002-319704 A

しかしながら、ｐ側電極とｎ側電極とで半導体部を挟んだ対向電極構造の発光素子の場合、従来技術のような光取出し面で等間隔の電極パターンにすると、光取出し面における電流密度分布を均一にすることができない。これは、対向電極構造の発光素子の場合、電流がｐ側電極とｎ側電極とを結ぶ方向である半導体部厚み方向に流れ易く、電極平面方向には流れにくい傾向があるため、電極面内において外部から電流が供給される地点（以下、電流供給地点）から離れるほど、供給される電流量が少なくなり、電流密度が低下するためである。そのため電流供給地点とその地点から離れた地点とでは供給される電流量が異なるため、光取出し面における電流密度分布の偏りが生じてしまう。   However, in the case of a light emitting device having a counter electrode structure in which a semiconductor part is sandwiched between a p-side electrode and an n-side electrode, if the electrode pattern is equally spaced on the light extraction surface as in the prior art, the current density distribution on the light extraction surface is It cannot be made uniform. This is because in the case of a light emitting device having a counter electrode structure, current tends to flow in the thickness direction of the semiconductor portion, which is a direction connecting the p-side electrode and the n-side electrode, and tends not to flow in the electrode plane direction. This is because the amount of current supplied decreases and the current density decreases as the distance from the point where current is supplied from the outside (hereinafter referred to as current supply point) is reduced. For this reason, the amount of current supplied is different between the current supply point and the point far from the point, and thus the current density distribution on the light extraction surface is biased.

そこで、本発明は、前述した問題に鑑みてなされたものであり、光取出し面における電流密度分布の偏りを小さくすることを目的とする。   Therefore, the present invention has been made in view of the above-described problems, and an object thereof is to reduce the bias of the current density distribution on the light extraction surface.

本発明に係る発光素子は、第１主面及び第２主面を有する半導体部と、第１主面上に配置された第１電極と、第２主面上に配置された第２電極と、を備える発光素子であって、第１主面の形状は矩形であり、第１電極は矩形の対向する一対の辺のうち一方の辺側に設けられた第１接続部及び第２接続部と、第１接続部から他方の辺に向かって延伸する第１延伸部と、第２接続部から他方の辺に向かって延伸する第２延伸部と、第１延伸部から第２延伸部に向かって延伸する２つの第３延伸部と、２つの第３延伸部で挟まれた領域において第２延伸部から第１延伸部に向かって延伸する第４延伸部と、を有し、第３延伸部と第４延伸部との間隔は、第１及び第２接続部から離れるに従って狭くなる。   A light-emitting element according to the present invention includes a semiconductor portion having a first main surface and a second main surface, a first electrode disposed on the first main surface, and a second electrode disposed on the second main surface; The first main surface has a rectangular shape, and the first electrode has a first connection portion and a second connection portion provided on one side of a pair of opposite sides of the rectangle. A first extending portion extending from the first connecting portion toward the other side, a second extending portion extending from the second connecting portion toward the other side, and a first extending portion to a second extending portion. Two third extending portions extending toward the first extending portion, and a fourth extending portion extending from the second extending portion toward the first extending portion in a region sandwiched between the two third extending portions. The distance between the extending portion and the fourth extending portion becomes narrower as the distance from the first and second connecting portions increases.

本発明によれば、光取出し面における電流密度分布の偏りを小さくすることができ、発光分布の輝度ムラを抑制可能な発光素子を提供することができる。   According to the present invention, it is possible to provide a light emitting element that can reduce the bias of the current density distribution on the light extraction surface and can suppress luminance unevenness of the light emission distribution.

本発明の第１実施形態に係る発光素子を示す平面図である。It is a top view which shows the light emitting element which concerns on 1st Embodiment of this invention. 本発明の第１実施形態に係る発光素子のＸ−Ｙ断面図である。It is XY sectional drawing of the light emitting element which concerns on 1st Embodiment of this invention. 本発明の第２実施形態に係る発光素子を示す平面図である。It is a top view which shows the light emitting element which concerns on 2nd Embodiment of this invention. 本発明の第３実施形態に係る発光素子を示す平面図である。It is a top view which shows the light emitting element which concerns on 3rd Embodiment of this invention. 従来の発光素子を示す平面図である。It is a top view which shows the conventional light emitting element.

以下、本発明の実施形態に係る発光素子について、図面を参照しながら説明する。ただし、以下に示す形態は、本発明の技術思想を具体化するためのものであって、本発明を以下のものに特定しない。各図面が示す部材のサイズや位置関係等は、説明を明確にするため誇張していることがある。さらに以下の説明において、同一の名称、符号については、原則として同一もしくは同質の部材を示しており、詳細説明を適宜省略する。   Hereinafter, light-emitting elements according to embodiments of the present invention will be described with reference to the drawings. However, the form shown below is for embodying the technical idea of the present invention, and the present invention is not limited to the following. The size and positional relationship of the members shown in each drawing may be exaggerated for clarity of explanation. Further, in the following description, the same name and reference sign indicate the same or the same members in principle, and the detailed description will be omitted as appropriate.

［第１実施形態］
第１実施形態に係る発光素子１００について、図１及び図２を参考にしながら説明する。図１は、本発明の第１実施形態に係る発光素子１００を示す平面図である。図２は、本発明の第１実施形態に係る発光素子１００のＸ−Ｙ断面図である。 [First Embodiment]
The light emitting device 100 according to the first embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a plan view showing a light emitting device 100 according to the first embodiment of the present invention. FIG. 2 is an XY cross-sectional view of the light emitting device 100 according to the first embodiment of the present invention.

第１実施形態に係る発光素子１００は、第１主面１１ａ及び第２主面１１ｂを有する半導体部１０と、第１主面１１ａ上に配置された第１電極２０と、第２主面１１ｂ上に配置された第２電極３０と、を備える。発光素子１００は、図１に示すように、第１主面１１ａ側から見て、第１主面１１ａの形状は矩形であり、第１電極２０は矩形の対向する一対の辺のうち一方の辺１２ａ側に設けられた第１接続部２１及び第２接続部２２と、第１接続部２１から他方の辺１２ｂに向かって延伸する第１延伸部２３と、第２接続部２２から他方の辺１２ｂに向かって延伸する第２延伸部２４と、第１延伸部２３から第２延伸部２４に向かって延伸する２つの第３延伸部２５と、２つの第３延伸部２５で挟まれた領域において第２延伸部２４から第１延伸部２３に向かって第３延伸部２３と対向するように延伸する第４延伸部２６と、を有し、第３延伸部２５と第４延伸部２６との間隔は、第１及び第２接続部（２１、２２）から離れるに従って狭くなることを特徴とする。ここで、「矩形」とは、４つの角が実質的に直角である四角形を指し、正方形や長方形が含まれる。また、「一方の辺１２ａ側」とは、対向する一対の辺（１２ａ及び１２ｂ）のそれぞれから等距離に位置する中間線（図示なし）と一方の辺１２ａとに挟まれた領域を指す。   The light emitting device 100 according to the first embodiment includes a semiconductor unit 10 having a first main surface 11a and a second main surface 11b, a first electrode 20 disposed on the first main surface 11a, and a second main surface 11b. A second electrode 30 disposed on the top. As shown in FIG. 1, the light emitting element 100 has a rectangular shape as viewed from the first main surface 11a side, and the first electrode 20 is one of a pair of opposing sides of the rectangle. The first connection portion 21 and the second connection portion 22 provided on the side 12a side, the first extension portion 23 extending from the first connection portion 21 toward the other side 12b, and the other end from the second connection portion 22 Sandwiched between the second extending portion 24 extending toward the side 12b, the two third extending portions 25 extending from the first extending portion 23 toward the second extending portion 24, and the two third extending portions 25 A fourth extending portion 26 extending from the second extending portion 24 toward the first extending portion 23 so as to face the third extending portion 23 in the region, and the third extending portion 25 and the fourth extending portion 26. The distance between the first and second connecting portions (21, 22) decreases as the distance from And butterflies. Here, “rectangular” refers to a quadrilateral whose four corners are substantially right angles, and includes a square and a rectangle. The “one side 12a side” refers to a region sandwiched between an intermediate line (not shown) located at an equal distance from each of a pair of opposing sides (12a and 12b) and one side 12a.

これより、他方の辺１２ｂ側（すなわち、電流供給地点である第１及び第２接続部から離れる）ほど、第３延伸部と第４延伸部との間の電流密度を高めることができる。対向電極構造は、他方の辺１２ｂ側ほど供給される電流量が少なくなるため、電流密度が低下するが、上記した構成にすることで、その電流密度の低下を補うことができる。したがって、一方の辺１２ａ側と他方の辺１２ｂ側との電流密度差を小さくでき、第１主面１１ａにおいて電流密度分布の偏りが小さい発光素子とすることができる。   Thus, the current density between the third extending portion and the fourth extending portion can be increased as the other side 12b side (that is, away from the first and second connecting portions which are current supply points) is obtained. In the counter electrode structure, since the amount of current supplied toward the other side 12b decreases, the current density decreases. However, the above configuration can compensate for the decrease in current density. Therefore, the current density difference between the one side 12a side and the other side 12b side can be reduced, and a light emitting element with a small bias of current density distribution on the first main surface 11a can be obtained.

以下、発光素子１００を構成する主な構成要素について説明する。   Hereinafter, main components constituting the light emitting element 100 will be described.

（半導体部）
半導体部１０は、発光素子１００における発光機能を果たす部材である。半導体部１０は、図２に示すように、半導体部１０を挟んで対向する第１主面１１ａ及び第２主面１１ｂを有し、第１主面１１ａが光取出し面となる。また、半導体部１０は、第１主面側から見て矩形として形成されており、本実施形態では１辺が約１ｍｍの正方形である。半導体部１０は、図示は省略したが、第１主面側から順に、第１半導体部、発光部、第２半導体部が設けられた構造を有する。 (Semiconductor part)
The semiconductor unit 10 is a member that performs a light emitting function in the light emitting element 100. As shown in FIG. 2, the semiconductor unit 10 has a first main surface 11a and a second main surface 11b that are opposed to each other with the semiconductor unit 10 interposed therebetween, and the first main surface 11a serves as a light extraction surface. Further, the semiconductor portion 10 is formed in a rectangular shape when viewed from the first main surface side, and in this embodiment, the semiconductor portion 10 is a square having one side of about 1 mm. Although not shown, the semiconductor unit 10 has a structure in which a first semiconductor unit, a light emitting unit, and a second semiconductor unit are provided in order from the first main surface side.

第１半導体部は、半導体部の第１主面側に形成され、第１電極と接続させるための部位である。また、第２半導体部は、半導体部の第２主面側に形成され、第２電極と接続させるための部位である。第１半導体部及び第２半導体部は、互いに異なる極性を有する。本実施形態では、第１半導体部をｎ型半導体、第２半導体部をｐ型半導体とする。   The first semiconductor part is a part that is formed on the first main surface side of the semiconductor part and is connected to the first electrode. The second semiconductor part is a part that is formed on the second main surface side of the semiconductor part and is connected to the second electrode. The first semiconductor part and the second semiconductor part have different polarities. In the present embodiment, the first semiconductor part is an n-type semiconductor and the second semiconductor part is a p-type semiconductor.

第１半導体部及び第２半導体部を構成する材料については限定されず、種々のものを用いることができる。本実施形態では、第１半導体部及び第２半導体部を構成する材料として、ＩｎｘＡｌｙＧａ１−ｘ−ｙＮ（０≦ｘ＜１、０≦ｙ＜１、０≦ｚ＜１）を用いた。 There are no limitations on the materials constituting the first semiconductor portion and the second semiconductor portion, and various materials can be used. In the present embodiment, In x Al y Ga 1-xy N (0 ≦ x <1, 0 ≦ y <1, 0 ≦ z <1) is used as the material constituting the first semiconductor portion and the second semiconductor portion. Was used.

第１半導体部の上面、すなわち半導体部の第１主面には、図２に示すように、波状の凹凸部が形成されている。凹凸（ディンプル加工）部は、半導体部の第１主面側にあり、この波状の凹凸部によって半導体部内の光の角度を変えることができる。従って、半導体部の上面に凹凸部を形成することで、光の全反射によって半導体部の外部に出射されない光を外部に取り出すことができ、光取出し効率を向上させることができる。なお、この凹凸部の深さは、光取出し効率を適切に向上させるという観点から、０．２〜３．０μｍとすることが好ましく、１．０〜１．５μｍとすることがより好ましい。   As shown in FIG. 2, a wavy uneven portion is formed on the upper surface of the first semiconductor portion, that is, the first main surface of the semiconductor portion. The unevenness (dimple processing) portion is on the first main surface side of the semiconductor portion, and the angle of light in the semiconductor portion can be changed by the wavy unevenness portion. Therefore, by forming the concavo-convex portion on the upper surface of the semiconductor portion, light that is not emitted outside the semiconductor portion due to total reflection of light can be extracted to the outside, and light extraction efficiency can be improved. In addition, it is preferable to set it as 0.2-3.0 micrometers from a viewpoint of improving the light extraction efficiency suitably, and, as for the depth of this uneven | corrugated | grooved part, it is more preferable to set it as 1.0-1.5 micrometers.

発光部は、ｎ型半導体である第１半導体部とｐ型半導体である第２半導体部とに挟まれており、第１半導体部及び第２半導体部から注入される電子及び正孔の再結合によって生成するエネルギーを光として放出する部位である。発光部の構成については限定されず、種々のものを用いることができる。本実施形態では、多重量子構造の活性層を用いた。   The light emitting part is sandwiched between a first semiconductor part that is an n-type semiconductor and a second semiconductor part that is a p-type semiconductor, and recombines electrons and holes injected from the first semiconductor part and the second semiconductor part. This is a site that emits energy generated as a result of light. The configuration of the light emitting unit is not limited, and various types can be used. In the present embodiment, an active layer having a multiple quantum structure is used.

（第１電極）
第１電極２０は、第１主面１１ａ側から半導体部１０に対して電流を供給するための電極であり、本実施形態では、発光素子１００が備える正負一対の電極のうち、負極であるｎ側電極として機能する。第１電極２０は、図２に示すように、半導体部１０の第１主面上に形成され、半導体部１０を介して第２電極３０と対向している。第１電極２０は、図１に示すように、第１接続部２１及び第２接続部２２と、第１〜５延伸部（２３〜２７）とを備える。 (First electrode)
The first electrode 20 is an electrode for supplying a current to the semiconductor unit 10 from the first main surface 11a side. In the present embodiment, n is a negative electrode among a pair of positive and negative electrodes included in the light emitting element 100. Functions as a side electrode. As shown in FIG. 2, the first electrode 20 is formed on the first main surface of the semiconductor unit 10 and faces the second electrode 30 through the semiconductor unit 10. The 1st electrode 20 is provided with the 1st connection part 21 and the 2nd connection part 22, and the 1st-5 extending | stretching part (23-27) as shown in FIG.

（第１接続部及び第２接続部）
第１接続部２１及び第２接続部２２は、導電性のワイヤ等の接続部材を経由して外部から電流が供給される部位である。第１及び第２接続部（２１、２２）は、図１に示すように、矩形形状である第１主面１１ａ上において、矩形の対向する一対の辺のうち一方の辺１２ａ側に設けられる。さらに、第１及び第２接続部（２１、２２）は、一方の辺１２ａの近傍に設けられることが好ましい。これより、第１又は２接続部と外部とをつなぐワイヤが第１主面を覆う範囲を小さくすることができるため、第１主面における光取出し面積を大きくすることができる。 (First connection part and second connection part)
The first connection portion 21 and the second connection portion 22 are portions to which current is supplied from the outside via a connection member such as a conductive wire. As shown in FIG. 1, the first and second connecting portions (21, 22) are provided on one side 12 a side of a pair of opposing sides of the rectangle on the rectangular first main surface 11 a. . Furthermore, it is preferable that the first and second connection portions (21, 22) are provided in the vicinity of one side 12a. As a result, since the range in which the wire connecting the first or second connecting portion and the outside covers the first main surface can be reduced, the light extraction area on the first main surface can be increased.

第１及び第２接続部は、第１及び第２接続部の各中心点を結ぶ直線（図示なし）が、一方の辺１２ａと平行であることが好ましい。さらに好ましくは、第１及び２接続部は、一方の辺１２ａの中点と他方の辺１２ｂの中点とを結ぶ直線（図示なし）に関して対称であることが良い。これより、前記した直線を境界として第１接続部が設けられる側と第２接続部が設けられる側とは、同一の電流密度分布となり、輝度ムラを抑制することができる。   In the first and second connection portions, it is preferable that a straight line (not shown) connecting the center points of the first and second connection portions is parallel to the one side 12a. More preferably, the first and second connecting portions may be symmetric with respect to a straight line (not shown) connecting the midpoint of one side 12a and the midpoint of the other side 12b. As a result, the side where the first connection portion is provided and the side where the second connection portion is provided with the straight line as a boundary have the same current density distribution, and uneven luminance can be suppressed.

（第１延伸部及び第２延伸部）
第１延伸部２３は、第１接続部２１から延伸する部位であり、第２延伸部２４は、第２接続部２２から延伸する部位であり、第１及び第２接続部（２１、２２）に供給された電流を第１主面の平面方向に供給するための電極である。 (1st extending part and 2nd extending part)
The first extending portion 23 is a portion extending from the first connecting portion 21, and the second extending portion 24 is a portion extending from the second connecting portion 22, and the first and second connecting portions (21, 22). This is an electrode for supplying the current supplied to the first main surface in the planar direction.

第１及び第２延伸部（２３、２４）は、図１に示すように、第１主面１１ａの他方の辺１２ｂ側に向かって延伸する。好ましくは、他方の辺１２ｂの近傍まで延伸するのが良い。これより、一方の辺１２ａ側から他方の辺１２ｂ側までの広範囲に電流を供給することができる。また、第１及び２延伸部は、第１接続部及び第２接続部の各中心点を結ぶ直線（図示なし）に対して垂直に延伸する、すなわち、第１主面１１ａにおける一方の辺１２ａに対して直交する辺と平行して延伸することが好ましい。なお、第１及び第２延伸部は、一方の辺１２ａに対して直交する辺と完全に平行でなく多少角度を有しても良い。   As shown in FIG. 1, the first and second extending portions (23, 24) extend toward the other side 12b of the first main surface 11a. Preferably, it extends to the vicinity of the other side 12b. Thus, a current can be supplied over a wide range from the one side 12a side to the other side 12b side. The first and second extending portions extend perpendicular to a straight line (not shown) connecting the center points of the first connecting portion and the second connecting portion, that is, one side 12a in the first main surface 11a. It is preferable to stretch in parallel with the side perpendicular to the direction. The first and second extending portions may not be completely parallel to the side orthogonal to the one side 12a but may have a slight angle.

なお、本実施形態では、第１及び第２接続部として接続部を２つ設けて、それぞれに後記する第３及び第４延伸部を設けるが、第１主面の大きさを考慮して、接続部を追加して設け、追加した接続部に延伸部を設けても良い。   In the present embodiment, two connection portions are provided as the first and second connection portions, and third and fourth extension portions described later are provided respectively. However, in consideration of the size of the first main surface, A connecting portion may be additionally provided, and an extending portion may be provided in the added connecting portion.

（第３延伸部及び第４延伸部）
第３延伸部２５は、第１延伸部２３から延伸する部位であり、第４延伸部２６は、第２延伸部２４から延伸する部位であり、第１及び第２延伸部ではカバーされない第１主面の領域に電流を供給するための電極である。 (3rd extending part and 4th extending part)
The third extending part 25 is a part extending from the first extending part 23, and the fourth extending part 26 is a part extending from the second extending part 24, and is not covered by the first and second extending parts. It is an electrode for supplying a current to the region of the main surface.

本実施形態では、第１延伸部２３から延伸する第３延伸部２５が２つ、第２延伸部２４から延伸する第４延伸部２６が１つ設けられており、第４延伸部２６が２つの第３延伸部で挟まれた領域において第１延伸部に向かって第３延伸部と対向するように延伸する。すなわち、第３延伸部２５と第４延伸部２６とが櫛状に互い違いで設けられる。これより、第１主面１１ａにおける第１延伸部と第２延伸部とで挟まれた領域にバランスよく電流を供給することができる。   In the present embodiment, two third extending portions 25 extending from the first extending portion 23 and one fourth extending portion 26 extending from the second extending portion 24 are provided, and the fourth extending portion 26 includes two. In the region sandwiched between the three third extending portions, the first extending portion is extended so as to face the third extending portion. That is, the third extending portion 25 and the fourth extending portion 26 are provided alternately in a comb shape. As a result, it is possible to supply current in a balanced manner to a region sandwiched between the first extending portion and the second extending portion in the first main surface 11a.

ここで、第３延伸部２５は、第４延伸部に対向し一方の辺１２ａ側に設けられる方を第３延伸部２５ａ、第４延伸部に対向し他方の辺１２ｂ側に設けられる方を第３延伸部２５ｂとする。第３延伸部２５と第４延伸部２６との間隔は、第１及び第２接続部から離れるに従って狭くなる。すなわち、図１に示すように、第４延伸部２６と第３延伸部２５ｂとの間隔（間隔Ｂ）は、第４延伸部２６と第３延伸部２５ａとの間隔（間隔Ａ）よりも小さいことが好ましい。これより、第４延伸部２６と第３延伸部２５ｂとの間の領域の電流密度を高めることができ、第１主面１１ａにおける電流密度分布の偏りを小さくすることができる。   Here, the third extending portion 25 is provided on the one side 12a side facing the fourth extending portion, and the third extending portion 25a is provided on the other side 12b side facing the fourth extending portion. Let it be the third extending portion 25b. The distance between the third extending portion 25 and the fourth extending portion 26 decreases as the distance from the first and second connecting portions increases. That is, as shown in FIG. 1, the interval (interval B) between the fourth extending portion 26 and the third extending portion 25b is smaller than the interval (interval A) between the fourth extending portion 26 and the third extending portion 25a. It is preferable. Thereby, the current density in the region between the fourth extending portion 26 and the third extending portion 25b can be increased, and the bias of the current density distribution on the first main surface 11a can be reduced.

第３延伸部２５の先端部と第２延伸部２４との間隔及び第４延伸部２６の先端部と第１延伸部２３との間隔は、第１及び第２接続部（２１、２２）から離れるに従って狭くなることが好ましい。すなわち、第３延伸部２５ａの先端部と第２延伸部２４との間隔、第４延伸部２４の先端部と第１延伸部２３との間隔、第３延伸部２５ｂの先端部と第２延伸部２４との間隔の順に狭くなることが好ましい。延伸部において枝分かれ部分が多いと、当該部分で電流集中が生じやすい。しかし、第３延伸部の先端部と第２延伸部とを離間させることにより、第１主面中における枝分かれ部分を減らし、当該部分における電流密度が過度に高くなることを抑制することができる。さらに、その間隔を第１及び第２接続部側に近いほど広くすることで、第３延伸部の先端部と第２延伸部との間、第４延伸部の先端部と第１延伸部との間で電流密度が過度に高くなることを抑制することができる。なお、第３延伸部は、第１延伸部から延伸して第２延伸部とつなげても良い。第４延伸部も同様に、第２延伸部から延伸して第１延伸部とつなげても良い。   The distance between the distal end portion of the third extending portion 25 and the second extending portion 24 and the distance between the distal end portion of the fourth extending portion 26 and the first extending portion 23 are determined from the first and second connecting portions (21, 22). It is preferable to become narrower as the distance increases. That is, the distance between the distal end portion of the third extending portion 25a and the second extending portion 24, the interval between the distal end portion of the fourth extending portion 24 and the first extending portion 23, and the distal end portion of the third extending portion 25b and the second extending portion. It is preferable that the distance is narrowed in the order of the distance from the portion 24. When there are many branching portions in the extending portion, current concentration tends to occur in the portion. However, by separating the tip portion of the third extending portion and the second extending portion, the branching portion in the first main surface can be reduced, and the current density in the portion can be suppressed from becoming excessively high. Further, by increasing the distance closer to the first and second connection parts, the tip part of the fourth extension part and the first extension part are arranged between the tip part of the third extension part and the second extension part. It is possible to suppress the current density from becoming excessively high. The third extending portion may be extended from the first extending portion and connected to the second extending portion. Similarly, the fourth stretched portion may be stretched from the second stretched portion and connected to the first stretched portion.

第３及び第４延伸部（２５、２６）は、互いに平行であることが好ましい。これより、第３及び第４延伸部が延伸する方向における第３延伸部と第４延伸部との間隔が一定となり、その間の電流密度を均一にすることができる。   The third and fourth extending portions (25, 26) are preferably parallel to each other. Thereby, the space | interval of the 3rd extending | stretching part and the 4th extending | stretching part in the direction where a 3rd and 4th extending | stretching part extends | stretches becomes constant, and the current density between them can be made uniform.

なお、本実施形態は、第３延伸部を２つ、第４延伸部を１つ設けているが、これに限定されることなく、第３延伸部を１つ、第４延伸部を２つにすることもできるし、さらに、発光素子又はその他の種々のパラメータを考慮して、第３及び第４延伸部の数を適宜選択しても良い。   In this embodiment, two third extending portions and one fourth extending portion are provided. However, the present invention is not limited to this, and one third extending portion and two fourth extending portions are provided. In addition, the number of the third and fourth extending portions may be appropriately selected in consideration of the light emitting element or other various parameters.

また、本実施形態の第３及び第４延伸部は、直線状に延伸し、その先端が丸みを帯びた形状であるが、これに限定されない。例えば、ギザギザ状または波状に延伸しても良いし、その先端は角張っていても良い。   Moreover, although the 3rd and 4th extending | stretching part of this embodiment is a shape which extended | stretched linearly and the front-end | tip was roundish, it is not limited to this. For example, it may be stretched in a jagged or wavy shape, and its tip may be angular.

（第５延伸部）
第５延伸部２７は、第１延伸部２３の先端部と第２延伸部２４の先端部とをつなぐように延伸する部位であり、第１主面１１ａの他方の辺１２ｂ側に電流を供給するための電極である。 (5th stretched part)
The fifth extending portion 27 is a portion that extends so as to connect the distal end portion of the first extending portion 23 and the distal end portion of the second extending portion 24, and supplies current to the other side 12b side of the first main surface 11a. It is an electrode for doing.

第５延伸部２７と第５延伸部に対向する第３延伸部２５ｂとの間隔（間隔Ｃ）は、第４延伸部２６と第５延伸部に対向する第３延伸部２５ｂとの間隔（間隔Ｂ）より小さいことが好ましい。より好ましくは、図１に示すように、第４延伸部２６と第３延伸部２５ａとの間隔（間隔Ａ）、第４延伸部２６と第３延伸部２５ｂとの間隔（間隔Ｂ）、第５延伸部２７と第３延伸部２５ｂとの間隔（間隔Ｃ）の順に狭くなること（すなわち、間隔Ａ＞間隔Ｂ＞間隔Ｃ）が良い。このような関係を満たすように第５延伸部を設けることで、第１主面上における第３延伸部２５ｂと第５延伸部２７とで挟まれた領域の電流密度分布が、第１主面上における第３延伸部２５ａと第４延伸部２６とで挟まれた領域及び第４延伸部と第３延伸部２５ｂとで挟まれた領域の電流密度分布と同様にできるため、第１主面のより広範囲で電流密度分布の偏りを小さくすることができる。   An interval (interval C) between the fifth extending portion 27 and the third extending portion 25b facing the fifth extending portion is an interval (interval) between the fourth extending portion 26 and the third extending portion 25b facing the fifth extending portion. B) is preferably smaller. More preferably, as shown in FIG. 1, the interval (interval A) between the fourth extending portion 26 and the third extending portion 25a, the interval (interval B) between the fourth extending portion 26 and the third extending portion 25b, It is preferable that the distance between the five extending portions 27 and the third extending portion 25b (the interval C) becomes narrower (that is, the interval A> the interval B> the interval C). By providing the fifth extending portion so as to satisfy such a relationship, the current density distribution in the region sandwiched between the third extending portion 25b and the fifth extending portion 27 on the first main surface becomes the first main surface. Since the current density distribution of the region sandwiched between the third stretched portion 25a and the fourth stretched portion 26 and the region sandwiched between the fourth stretched portion and the third stretched portion 25b can be the same as the first main surface, The bias of the current density distribution can be reduced in a wider range.

第５延伸部２７は、第３延伸部２５ｂと平行であることが好ましい。これより、第５延伸部が延伸する方向における第５延伸部２７と第３延伸部２５ｂとの間の電流密度を均一にすることができる。   The fifth extending part 27 is preferably parallel to the third extending part 25b. Thereby, the current density between the 5th extending part 27 and the 3rd extending part 25b in the direction in which the 5th extending part extends can be made uniform.

第５延伸部２７から他方の辺１２ｂまでの距離（すなわち、第３及び第４延伸部のうち最も他方の辺１２ｂ側に設けられる延伸部から他方の辺１２ｂまでの距離）は、第３延伸部２５ａから一方の辺１２ａまでの距離（すなわち、第３及び第４延伸部のうち最も一方の辺１２ａ側に設けられる延伸部から一方の辺１２ａまでの距離）より短いことが好ましい。第３延伸部２５ａは第５延伸部より第１接続部側に配置されるために第１接続部から供給される電流量が多くなるので、第３延伸部２５ａから一方の辺１２ａまでの距離を長くすることで、第３延伸部２５ａと一方の辺１２ａとの間の電流密度が増大しすぎることを抑制する。一方、第５延伸部２７は第３延伸部より第１接続部から遠ざかって配置されるために第１接続部から供給される電流が少なくなるので、第５延伸部２７から他方の辺１２ｂまでの距離を短くすることで、第５延伸部２７と他方の辺１２ｂとの間の電流密度が増大できる。これより、第１主面の一方の辺１２ａ側と他方の辺１２ｂ側との電流密度分布の偏りを小さくすることができる。   The distance from the fifth extending portion 27 to the other side 12b (that is, the distance from the extending portion provided closest to the other side 12b of the third and fourth extending portions to the other side 12b) is the third extending portion. It is preferable that the distance is shorter than the distance from the portion 25a to the one side 12a (that is, the distance from the extended portion provided on the side of the first side 12a of the third and fourth extended portions to the one side 12a). Since the third extending portion 25a is disposed closer to the first connecting portion than the fifth extending portion, the amount of current supplied from the first connecting portion is increased, so the distance from the third extending portion 25a to the one side 12a By lengthening, it is suppressed that the current density between the 3rd extending | stretching part 25a and the one side 12a increases too much. On the other hand, since the fifth extending portion 27 is arranged farther from the first connecting portion than the third extending portion, the current supplied from the first connecting portion is reduced, and therefore, from the fifth extending portion 27 to the other side 12b. By shortening the distance, the current density between the fifth extending portion 27 and the other side 12b can be increased. Thereby, the bias of the current density distribution between the one side 12a side and the other side 12b side of the first main surface can be reduced.

第１電極２０の厚さは限定されないが、導電性の観点から、例えば０．１〜５μｍとすることが好ましい。また、第１電極の材料としては、Ｎｉ、Ａｕ、Ｗ、Ｐｔ、Ｔｉ、Ａｌ等を用いることができ、本実施形態では、Ｔｉ／Ｐｔ／Ａｕの多層膜を用いた。なお、「Ｔｉ／Ｐｔ／Ａｕ」は、図２に示す本発明の発光素子の断面図において下側から順にＴｉ、Ｐｔ及びＡｕが積層されていることを指す。   Although the thickness of the 1st electrode 20 is not limited, It is preferable to set it as 0.1-5 micrometers from a conductive viewpoint, for example. In addition, Ni, Au, W, Pt, Ti, Al, or the like can be used as the material of the first electrode. In this embodiment, a Ti / Pt / Au multilayer film is used. Note that “Ti / Pt / Au” indicates that Ti, Pt, and Au are stacked in order from the bottom in the cross-sectional view of the light-emitting element of the present invention shown in FIG.

なお、第５延伸部を設けない場合でも、本発明の効果を得ることができる。   In addition, even when not providing a 5th extending | stretching part, the effect of this invention can be acquired.

（第２電極）
第２電極３０は、第２主面側から半導体部１０に対して電流を供給するための電極であり、本実施形態では、発光素子１００が備える正負一対の電極のうち、正極であるｐ側電極として機能する。第２電極３０は、図２に示すように、半導体部１０の下面に形成され、半導体部１０を介して、第１電極２０と対向している。 (Second electrode)
The second electrode 30 is an electrode for supplying current to the semiconductor unit 10 from the second main surface side. In the present embodiment, the positive electrode of the pair of positive and negative electrodes included in the light emitting element 100 is the p side. Functions as an electrode. As shown in FIG. 2, the second electrode 30 is formed on the lower surface of the semiconductor unit 10 and faces the first electrode 20 with the semiconductor unit 10 interposed therebetween.

第２電極３０は、図２に示すように、第２電極直上に第１電極２０が形成されない程度に設けられるのが好ましい。第１電極と第２電極との位置関係をこのような関係とすることで、第１電極２０と第２電極３０との間を流れる電流が半導体部１０内を膜厚方向に最短で流れることがなく、電流が面内に広範囲に分散されるようになる。従って、半導体部内で比較的均一に発光するようになり、光取出し効率が向上する。   As shown in FIG. 2, the second electrode 30 is preferably provided to the extent that the first electrode 20 is not formed immediately above the second electrode. By setting the positional relationship between the first electrode and the second electrode in such a relationship, the current flowing between the first electrode 20 and the second electrode 30 flows in the semiconductor unit 10 in the shortest direction in the film thickness direction. And the current is distributed over a wide area in the plane. Accordingly, light is emitted relatively uniformly in the semiconductor portion, and the light extraction efficiency is improved.

また、第２電極の面積は、第１電極の面積よりも大きく形成することが好ましい。発光素子は、第１及び第２電極の面積をこのような関係とすることで、電流を注入する領域の面積を大きくすることができ、発光効率が向上させることができる。また、発光による熱の放熱性も向上させることができ、発光素子の放熱性を改善することができる。   The area of the second electrode is preferably larger than the area of the first electrode. In the light emitting element, by setting the areas of the first and second electrodes in such a relationship, the area of the region where current is injected can be increased, and the light emission efficiency can be improved. Moreover, the heat dissipation of the heat by light emission can also be improved and the heat dissipation of a light emitting element can be improved.

第２電極の厚さは限定されないが、導電性の観点から、例えば０．０５〜０．５μｍとすることが好ましい。また、第２電極の材料としては、Ｎｉ、Ａｕ、Ｗ、Ｐｔ、Ｔｉ、Ａｌ、Ｉｒ、Ｒｈ、ＲｈＯ、Ａｇ等を用いることができ、本実施形態では、Ｐｔ／Ｔｉ／Ｎｉ／Ａｇの多層膜を用いた。   The thickness of the second electrode is not limited, but is preferably 0.05 to 0.5 μm, for example, from the viewpoint of conductivity. Further, Ni, Au, W, Pt, Ti, Al, Ir, Rh, RhO, Ag, or the like can be used as the material of the second electrode. In this embodiment, a multilayer of Pt / Ti / Ni / Ag is used. A membrane was used.

（支持基板）
支持基板４０は、電極や半導体部等の各部材を積層するためのものである。支持基板の面積は限定されず、半導体部の大きさによって適宜選択される。支持基板は、図２では半導体部より大きい面積を有するが、半導体部と同じ面積でも良い。また、支持基板の厚さは限定されないが、放熱性の観点から、例えば５０〜５００μｍとすることが好ましい。 (Support substrate)
The support substrate 40 is for laminating members such as electrodes and semiconductor parts. The area of the support substrate is not limited and is appropriately selected depending on the size of the semiconductor portion. The support substrate has an area larger than that of the semiconductor portion in FIG. 2, but may be the same area as the semiconductor portion. Moreover, although the thickness of a support substrate is not limited, From a heat dissipation viewpoint, it is preferable to set it as 50-500 micrometers, for example.

支持基板の材料としては、Ｓｉ、ＳｉＣ、ＡｌＮ、ＡｌＳｉＣ、Ｃｕ−Ｗ、Ｃｕ−Ｍｏ、Ｃｕ−ダイヤ等の金属とセラミックの積層体等を用いることができる。そしてその中でも、安価でチップ化のしやすいＳｉを用いることが好ましい。   As a material of the support substrate, a laminate of metal and ceramic such as Si, SiC, AlN, AlSiC, Cu—W, Cu—Mo, and Cu—diamond can be used. Among them, it is preferable to use Si which is inexpensive and easily chipped.

（接合層）
接合層５０は、支持基板４０に第２電極３０及び第２保護膜７０を接合するとともに、支持基板４０を介して第２電極３０と後記する裏面メタライズ層８０とを電気的に接続するための導電性の層である。接合層５０は、図２に示すように、支持基板４０の上部に形成される。 (Bonding layer)
The bonding layer 50 bonds the second electrode 30 and the second protective film 70 to the support substrate 40 and electrically connects the second electrode 30 and a back metallization layer 80 to be described later via the support substrate 40. It is a conductive layer. As shown in FIG. 2, the bonding layer 50 is formed on the support substrate 40.

接合層の厚さは限定されないが、接合性及び導電性の観点から、１〜５μｍとすることが好ましい。また、接合層の材料としては、Ｔｉ、Ｐｔ、Ａｕ、Ｓｎ、Ａｕ、Ａｇ、Ｃｕ、Ｂｉ、Ｐｂ、Ｚｎ等の金属材料及びこれらの合金を用いることができる。本実施形態では、ＴｉＳｉ２／Ｐｔ／Ａｕ／ＡｕＳｎ／Ａｕ／Ｐｔの多層膜を用いた。なお、「ＴｉＳｉ２／Ｐｔ／Ａｕ／ＡｕＳｎ／Ａｕ／Ｐｔ」は、図２に示す本発明の発光素子の断面図において下側から順にＴｉＳｉ２、Ｐｔ、Ａｕ、ＡｕＳｎ、Ａｕ及びＰｔが積層されていることを指す。 Although the thickness of a joining layer is not limited, It is preferable to set it as 1-5 micrometers from a viewpoint of joining property and electroconductivity. As the material for the bonding layer, metal materials such as Ti, Pt, Au, Sn, Au, Ag, Cu, Bi, Pb, Zn, and alloys thereof can be used. In the present embodiment, a multilayer film of TiSi 2 / Pt / Au / AuSn / Au / Pt is used. Incidentally, "TiSi 2 / Pt / Au / AuSn / Au / Pt " is, TiSi 2, Pt, Au, AuSn, is Au and Pt are laminated from the bottom in this order in the cross-sectional view of the light-emitting device of the present invention shown in FIG. 2 It points to that.

（第１保護膜）
第１保護膜６０は、半導体部１０及び第１電極２０を、電流のショートや埃・塵の付着等による物理的ダメージから保護するための部材である。第１保護膜６０は、図２に示すように、第１電極２０及び半導体部１０の第１主面１１ａ上に形成される。但し、第１保護膜６０は、第１及び第２接続部の開口部の上部では開口されており、第１及び第２接続部が外部に露出されるように構成される。なお、第１保護膜６０は、図２では第１電極２０の側面と隣接しているが、第１電極２０と間隔を空けて設けることもできる。 (First protective film)
The first protective film 60 is a member for protecting the semiconductor unit 10 and the first electrode 20 from physical damage due to a short circuit of current or adhesion of dust / dust. As shown in FIG. 2, the first protective film 60 is formed on the first electrode 20 and the first major surface 11 a of the semiconductor unit 10. However, the first protective film 60 is opened above the openings of the first and second connection portions, and is configured such that the first and second connection portions are exposed to the outside. Although the first protective film 60 is adjacent to the side surface of the first electrode 20 in FIG. 2, the first protective film 60 may be provided at a distance from the first electrode 20.

第１保護膜の材料は限定されず、種々のものを用いることができる。本実施形態では、ＳｉＯ２を用いた。第１保護膜の厚さは限定されないが、例えば０．２〜０．５μｍとすることが好ましい。 The material of the first protective film is not limited, and various materials can be used. In this embodiment, SiO 2 is used. Although the thickness of a 1st protective film is not limited, For example, it is preferable to set it as 0.2-0.5 micrometer.

（第２保護膜）
第２保護膜７０は、半導体部１０及び第２電極３０を、電流のショート等による物理的ダメージから保護するための部材である。第２保護膜７０は、図２に示すように、接合層５０上における第２電極３０に隣接する領域に形成される。なお、第２保護膜７０は、図２では第２電極３０の側面と隣接しているが、間隔を空けて設けることもできる。 (Second protective film)
The second protective film 70 is a member for protecting the semiconductor unit 10 and the second electrode 30 from physical damage due to a short circuit of current. As shown in FIG. 2, the second protective film 70 is formed in a region adjacent to the second electrode 30 on the bonding layer 50. The second protective film 70 is adjacent to the side surface of the second electrode 30 in FIG. 2, but may be provided with a gap.

第２保護膜の厚さは限定されないが、例えば０．２〜０．５μｍとすることが好ましい。また、第２保護膜の材料としては、Ｔｉ、Ａｌ、Ｐｔ、ＳｉＯ２、ＺｒＯ２等を用いることができ、本実施形態では、Ｔｉ／ＳｉＯ２／Ｔｉ／Ｐｔの多層膜を用いた。 Although the thickness of a 2nd protective film is not limited, For example, it is preferable to set it as 0.2-0.5 micrometer. Moreover, Ti, Al, Pt, SiO 2 , ZrO 2 or the like can be used as the material of the second protective film, and in this embodiment, a multilayer film of Ti / SiO 2 / Ti / Pt is used.

（裏面メタライズ層）
裏面メタライズ層８０は、発光素子１００において、オーミック電極として機能する層である。裏面メタライズ層８０は、図２に示すように、支持基板４０において接合層５０が形成されている側と対向する側に形成される。 (Back metallization layer)
The back metallized layer 80 is a layer that functions as an ohmic electrode in the light emitting device 100. As shown in FIG. 2, the back metallized layer 80 is formed on the side of the support substrate 40 that faces the side on which the bonding layer 50 is formed.

裏面メタライズ層の厚さは限定されないが、導電性の観点から、例えば０．５〜０．８μｍとすることが好ましい。本実施形態では、裏面メタライズ層を構成する材料として、Ａｕ／ＡｕＳｎ／Ｐｔ／ＴｉＳｉ２の多層膜を用いた。 Although the thickness of a back surface metallization layer is not limited, From a conductive viewpoint, it is preferable to set it as 0.5-0.8 micrometer, for example. In this embodiment, a multilayer film of Au / AuSn / Pt / TiSi 2 is used as a material constituting the back metallization layer.

なお、本実施形態では、発光素子１００は、支持基板４０、接合層５０、第１保護膜６０、第２保護膜７０及び裏面メタライズ層８０を備える構成としているが、これらの部材を備えなくても本発明の効果を得ることができる。   In the present embodiment, the light emitting element 100 includes the support substrate 40, the bonding layer 50, the first protective film 60, the second protective film 70, and the back metallized layer 80. However, these members are not included. Also, the effects of the present invention can be obtained.

［発光素子の製造方法］
以下、本発明の第１実施形態に係る発光素子１００の製造方法について説明する。発光素子１００の製造方法は、半導体部形成工程と、第２電極形成工程と、第２保護膜形成工程と、接合層形成工程と、貼り合わせ工程と、第１電極形成工程と、第１保護膜形成工程と、を含む。以下、各工程について説明する。 [Method for Manufacturing Light-Emitting Element]
Hereinafter, a method for manufacturing the light emitting device 100 according to the first embodiment of the present invention will be described. The manufacturing method of the light emitting element 100 includes a semiconductor part forming step, a second electrode forming step, a second protective film forming step, a bonding layer forming step, a bonding step, a first electrode forming step, and a first protection. A film forming step. Hereinafter, each step will be described.

＜半導体部形成工程＞
半導体部形成工程は、異種基板上に第１半導体部、発光部及び第２半導体部からなる半導体部を形成する工程である。半導体部形成工程では、サファイア等からなる異種基板上の表面に、所定の半導体材料、ドーパントなどを含むガスを供給して、第１半導体部、発光部および第２半導体部の順に形成させる。 <Semiconductor part formation process>
The semiconductor portion forming step is a step of forming a semiconductor portion including a first semiconductor portion, a light emitting portion, and a second semiconductor portion on a heterogeneous substrate. In the semiconductor part forming step, a gas containing a predetermined semiconductor material, a dopant, and the like is supplied to the surface on the heterogeneous substrate made of sapphire or the like, and the first semiconductor part, the light emitting part, and the second semiconductor part are formed in this order.

＜第２電極形成工程＞
第２電極形成工程は、半導体部１０上に第２電極３０を形成する工程である。第２電極形成工程では、半導体部１０の第２半導体層上の表面に、レジストを用いて第２電極３０に対応したマスクを形成し、スパッタリング等で電極材料を積層することによって、第２電極３０を形成する。 <Second electrode forming step>
The second electrode forming step is a step of forming the second electrode 30 on the semiconductor unit 10. In the second electrode forming step, a mask corresponding to the second electrode 30 is formed on the surface of the semiconductor portion 10 on the second semiconductor layer using a resist, and an electrode material is stacked by sputtering or the like, whereby the second electrode is formed. 30 is formed.

＜第２保護膜形成工程＞
第２保護膜形成工程は、半導体部１０上に第２保護膜７０を形成する工程である。第２保護膜形成工程では、半導体部１０の第２半導体部上の表面に、レジストを用いて第２保護膜７０に対応したマスクを形成し、スパッタリング等で絶縁膜材料を積層することによって、第２保護膜７０を形成する。 <Second protective film forming step>
The second protective film forming step is a step of forming the second protective film 70 on the semiconductor unit 10. In the second protective film forming step, a mask corresponding to the second protective film 70 is formed using a resist on the surface of the semiconductor portion 10 on the second semiconductor portion, and an insulating film material is stacked by sputtering or the like, A second protective film 70 is formed.

＜接合層形成工程＞
接合層形成工程は、半導体部１０、第２電極３０及び第２保護膜７０上に接合層５０を形成する工程である。接合層形成工程では、半導体部１０、第２電極３０及び第２保護膜７０上に、スパッタリング等で導電膜材料を積層することによって、接合層５０を形成する。 <Joint layer forming step>
The bonding layer forming step is a step of forming the bonding layer 50 on the semiconductor unit 10, the second electrode 30, and the second protective film 70. In the bonding layer formation step, the bonding layer 50 is formed by laminating a conductive film material by sputtering or the like on the semiconductor portion 10, the second electrode 30, and the second protective film 70.

＜貼り合わせ工程＞
貼り合わせ工程は、半導体部１０を備える異種基板と支持基板４０とを貼り合わせる工程である。貼り合わせ工程では、前記した接合層５０が同様に形成された支持基板４０を用意し、支持基板４０の接合層と異種基板の接合層とを貼り合わせ、互いに接合する。そして、異種基板を除去する。なお、貼り合わせ工程後、支持基板４０の厚みを薄くすることで発光素子を小型化することもできる。 <Lamination process>
The bonding step is a step of bonding the heterogeneous substrate including the semiconductor unit 10 and the support substrate 40 together. In the bonding step, a support substrate 40 in which the above-described bonding layer 50 is similarly formed is prepared, and the bonding layer of the support substrate 40 and the bonding layer of the dissimilar substrate are bonded and bonded together. Then, the heterogeneous substrate is removed. Note that the light-emitting element can be reduced in size by reducing the thickness of the support substrate 40 after the bonding step.

＜第１電極形成工程＞
第１電極形成工程は、半導体部１０上に第１電極２０を形成する工程である。第１電極形成工程では、半導体部１０の第１半導体層上の表面に、レジストを用いて第１電極に対応したマスクを形成し、スパッタリング等で電極材料を積層することによって、第１電極１０を形成する。そして、レジストを除去することによって、第１電極２０が形成されていない領域を形成する。なお、第１電極２０を形成する前に、半導体部１０の上面に凹凸（ディンプル加工）部を形成することもできる。 <First electrode forming step>
The first electrode forming step is a step of forming the first electrode 20 on the semiconductor unit 10. In the first electrode forming step, a mask corresponding to the first electrode is formed on the surface of the semiconductor portion 10 on the first semiconductor layer using a resist, and an electrode material is laminated by sputtering or the like, whereby the first electrode 10 is formed. Form. Then, by removing the resist, a region where the first electrode 20 is not formed is formed. In addition, before forming the first electrode 20, an uneven portion (dimple processing) portion can be formed on the upper surface of the semiconductor portion 10.

＜第１保護膜形成工程＞
第１保護膜形成工程は、半導体部１０上に第１保護膜６０を形成する工程である。第１保護膜形成工程では、半導体部１０上の表面に、スパッタリング等で絶縁膜材料を積層することによって、第１保護膜６０を形成する。そして、第１保護膜６０のうち第１電極２０の第１及び第２接続部（２１、２２）に相当する領域を除去し、第１及び第２接続部（２１、２２）を露出させる。 <First protective film forming step>
The first protective film forming step is a step of forming the first protective film 60 on the semiconductor unit 10. In the first protective film forming step, the first protective film 60 is formed on the surface of the semiconductor unit 10 by laminating an insulating film material by sputtering or the like. And the area | region corresponded to the 1st and 2nd connection parts (21, 22) of the 1st electrode 20 among the 1st protective films 60 is removed, and the 1st and 2nd connection parts (21, 22) are exposed.

［第２実施形態］
以下、第２実施形態に係る発光素子２００について、図３を参照しながら説明する。図３は、第２実施形態に係る発光素子２００を示す平面図である。発光素子２００は、発光素子１００と比べて第１電極２０の配置のみが異なる構成である。前記した発光素子１００と重複する構成については、同じ符号を付して説明を省略する。また、発光素子２００は、前記した発光素子１００と、断面構造（図２）及び製造方法についてもほぼ同様であるため、説明を省略する。 [Second Embodiment]
Hereinafter, the light emitting device 200 according to the second embodiment will be described with reference to FIG. 3. FIG. 3 is a plan view showing a light emitting device 200 according to the second embodiment. The light emitting element 200 is different from the light emitting element 100 only in the arrangement of the first electrode 20. About the structure which overlaps with above-described light emitting element 100, the same code | symbol is attached | subjected and description is abbreviate | omitted. The light-emitting element 200 is substantially the same as the above-described light-emitting element 100 in terms of a cross-sectional structure (FIG. 2) and a manufacturing method, and thus description thereof is omitted.

第２実施形態に係る発光素子２００の第１電極１２０は、図３に示すように、第１及び第２接続部（１２１、１２２）と、第１〜５延伸部（２３〜２７）と、を備え、第１及び第２接続部（１２１、１２２）が第１主面１１ａの矩形の隣接する２つの隅部（すなわち、第１主面の隣り合う２つの角部）に設けられ、第１延伸部２３は第１接続部１２１の第２接続部１２２側から第１接続部１２１と第２接続部１２２とを結ぶ直線に対して垂直な方向に延伸しており、第２延伸部２４は第２接続部１２２の第１接続部１２１側から第１接続部１２１と第２接続部１２２とを結ぶ直線に対して垂直な方向に延伸している構成を有する。   As shown in FIG. 3, the first electrode 120 of the light emitting device 200 according to the second embodiment includes first and second connection parts (121, 122), first to fifth extending parts (23 to 27), The first and second connecting portions (121, 122) are provided at two adjacent corners of the rectangle of the first main surface 11a (that is, two adjacent corners of the first main surface), The first extending portion 23 extends in the direction perpendicular to the straight line connecting the first connecting portion 121 and the second connecting portion 122 from the second connecting portion 122 side of the first connecting portion 121, and the second extending portion 24. Has a configuration extending in a direction perpendicular to a straight line connecting the first connection portion 121 and the second connection portion 122 from the first connection portion 121 side of the second connection portion 122.

これより、第５延伸部２７の長さを短くすることができるため、発光部からの光が第５延伸部２７で遮られる面積は小さくなり、第１主面１１ａの光取出し面積を大きくすることができる。さらに、第１接続部１２１が第１主面１１ａの角部に設けられることで、ワイヤが第１主面１１ａからの光を遮断することなく第１接続部１２１から外部へ取り付けられる方向をより広範囲にできる。これより、発光素子を設計する際の自由度を高くすることができる。なお、第２接続部１２２についても同様の効果を得ることができる。   Thereby, since the length of the 5th extending part 27 can be shortened, the area where the light from the light emitting part is blocked by the 5th extending part 27 is reduced, and the light extraction area of the first main surface 11a is increased. be able to. Furthermore, since the first connection portion 121 is provided at the corner of the first main surface 11a, the direction in which the wire is attached from the first connection portion 121 to the outside without blocking the light from the first main surface 11a is further improved. A wide range is possible. Thereby, the freedom degree at the time of designing a light emitting element can be made high. The same effect can be obtained with respect to the second connection portion 122.

ここで、第１延伸部２３は、第１接続部１２１から他方の辺１２ｂ側に直線として延伸することに限定されず、第１主面１１ａの一方の辺１２ａの中点と他方の辺１２ｂの中点とを結ぶ直線側に一旦延伸させた後に他方の辺１２ｂ側に延伸させるように、段階的に延伸させることもできる。第２延伸部２４についても同様の構成にすることができる。   Here, the 1st extending | stretching part 23 is not limited to extending | stretching as a straight line from the 1st connection part 121 to the other side 12b side, The middle point of the one side 12a of the 1st main surface 11a, and the other side 12b It can also be extended stepwise so that it is once extended to the straight line connecting the middle point and then extended to the other side 12b. The second extending portion 24 can be configured similarly.

［第３実施形態］
以下、第３実施形態に係る発光素子３００について、図４を参照しながら説明する。図４は、第３実施形態に係る発光素子３００を示す平面図である。第３実施形態に係る発光素子３００は、図４に示すように、第２実施形態に係る発光素子２００と比べて第１電極の第１及び第２接続部の形状のみが異なる構成である。すなわち、発光素子２００における第１電極１２０の第１及び第２接続部（１２１、１２２）の形状は円形であるが、発光素子３００おける第１電極２２０の第１及び第２接続部（２２１、２２２）の形状は四角形である。なお、四角形は、４隅が角部であることに限定されず、丸みを帯びていても良いし、さらに、四角形を構成する辺が直線であることに限定されず、曲線となっていても良い。 [Third Embodiment]
Hereinafter, the light emitting device 300 according to the third embodiment will be described with reference to FIG. 4. FIG. 4 is a plan view showing a light emitting device 300 according to the third embodiment. As illustrated in FIG. 4, the light emitting element 300 according to the third embodiment has a configuration that is different from the light emitting element 200 according to the second embodiment only in the shapes of the first and second connection portions of the first electrode. That is, the first and second connection parts (121, 122) of the first electrode 120 in the light emitting element 200 are circular, but the first and second connection parts (221, 122) of the first electrode 220 in the light emitting element 300 are circular. The shape of 222) is a quadrangle. The quadrangle is not limited to the corners of the four corners, and may be rounded. Furthermore, the sides constituting the quadrangle are not limited to straight lines, and may be curved. good.

１００、２００、３００ 発光素子
１０ 半導体部
１１ａ 第１主面
１１ｂ 第２主面
１２ａ 一方の辺
１２ｂ 他方の辺
２０、１２０，２２０ 第１電極
２１、１２１、２２１ 第１接続部
２２、１２２、２２２ 第２接続部
２３ 第１延伸部
２４ 第２延伸部
２５、２５ａ、２５ｂ 第３延伸部
２６ 第４延伸部
２７ 第５延伸部
３０ 第２電極

４０ 支持基板
５０ 接合層
６０ 第１保護膜
７０ 第２保護膜
８０ 裏面メタライズ層 100, 200, 300 Light-emitting element 10 Semiconductor part 11a First main surface 11b Second main surface 12a One side 12b The other side 20, 120, 220 First electrode 21, 121, 221 First connection part 22, 122, 222 2nd connection part 23 1st extending part 24 2nd extending part 25, 25a, 25b 3rd extending part 26 4th extending part 27 5th extending part 30 2nd electrode

40 support substrate 50 bonding layer 60 first protective film 70 second protective film 80 back surface metallization layer

Claims (5)

第１主面及び第２主面を有する半導体部と、前記第１主面上に配置された第１電極と、前記第２主面上に配置された第２電極と、を備える発光素子であって、
前記第１主面の形状は、矩形であり、
前記第１電極は、前記矩形の対向する一対の辺のうち一方の辺側に設けられた第１接続部及び第２接続部と、前記第１接続部から他方の辺に向かって延伸する第１延伸部と、前記第２接続部から前記他方の辺に向かって延伸する第２延伸部と、前記第１延伸部から前記第２延伸部に向かって延伸する２つの第３延伸部と、前記２つの第３延伸部で挟まれた領域において前記第２延伸部から前記第１延伸部に向かって延伸する第４延伸部と、を有し、
前記第３延伸部と前記第４延伸部との間隔は、前記第１及び第２接続部から離れるに従って狭くなることを特徴とする発光素子。 A light emitting device comprising: a semiconductor portion having a first main surface and a second main surface; a first electrode disposed on the first main surface; and a second electrode disposed on the second main surface. There,
The shape of the first main surface is a rectangle,
The first electrode includes a first connection portion and a second connection portion provided on one side of a pair of opposite sides of the rectangle, and a first extension extending from the first connection portion toward the other side. 1 extending portion, a second extending portion extending from the second connecting portion toward the other side, two third extending portions extending from the first extending portion toward the second extending portion, A fourth extending portion extending from the second extending portion toward the first extending portion in a region sandwiched between the two third extending portions,
The light emitting device, wherein a distance between the third extending portion and the fourth extending portion becomes narrower as the distance from the first and second connecting portions increases. 前記第３延伸部の先端部と前記第２延伸部との間隔及び前記第４延伸部の先端部と前記第１延伸部との間隔は、前記第１及び第２接続部から離れるに従って狭くなることを特徴とする請求項１に記載された発光素子。   The distance between the distal end portion of the third extending portion and the second extending portion and the interval between the distal end portion of the fourth extending portion and the first extending portion are reduced as the distance from the first and second connecting portions is increased. The light-emitting element according to claim 1. 前記第１電極は、前記第１延伸部の先端部と前記第２延伸部の先端部とをつなぐ第５延伸部を有し、
前記第５延伸部と前記第５延伸部に対向する前記第３延伸部との間隔は、前記第４延伸部と前記第５延伸部に対向する前記第３延伸部との間隔より狭いことを特徴とする請求項１または２に記載された発光素子。 The first electrode has a fifth extending portion that connects a tip portion of the first extending portion and a tip portion of the second extending portion,
An interval between the fifth extending portion and the third extending portion facing the fifth extending portion is narrower than an interval between the fourth extending portion and the third extending portion facing the fifth extending portion. The light emitting device according to claim 1, wherein the light emitting device is a light emitting device. 前記第１主面は光取出し面であり、
前記第１及び第２接続部は、前記第１主面の矩形の隣接する２つの隅部に設けられることを特徴とする請求項３に記載された発光素子。 The first main surface is a light extraction surface;
4. The light emitting device according to claim 3, wherein the first and second connection portions are provided at two adjacent corners of the rectangle of the first main surface. 前記第１延伸部は、前記第１接続部の前記第２接続部側から前記第１接続部と前記第２接続部とを結ぶ直線に対して垂直な方向に延伸しており、
前記第２延伸部は、前記第２接続部の前記第１接続部側から前記第１接続部と前記第２接続部とを結ぶ直線に対して垂直な方向に延伸していることを特徴とする請求項４に記載された発光素子。 The first extending portion extends in a direction perpendicular to a straight line connecting the first connecting portion and the second connecting portion from the second connecting portion side of the first connecting portion,
The second extending portion extends from the first connecting portion side of the second connecting portion in a direction perpendicular to a straight line connecting the first connecting portion and the second connecting portion. The light emitting device according to claim 4.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014099491A (en) * 2012-11-14 2014-05-29 Stanley Electric Co Ltd Semiconductor light-emitting element
US9070834B2 (en) 2013-06-18 2015-06-30 Samsung Electronics Co., Ltd. Semiconductor light emitting device
EP2975379A1 (en) * 2014-07-18 2016-01-20 Horiba, Ltd. Particle analysis apparatus
JP2016072479A (en) * 2014-09-30 2016-05-09 日亜化学工業株式会社 Light emitting element

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004172217A (en) * 2002-11-18 2004-06-17 Matsushita Electric Works Ltd Semiconductor light emitting element
JP2004228554A (en) * 2003-01-17 2004-08-12 Epitech Technology Corp Light emitting diode having distributed electrode
US20060284191A1 (en) * 2005-06-16 2006-12-21 Epistar Corporation Light emitting diode
WO2008038842A1 (en) * 2006-09-25 2008-04-03 Seoul Opto Device Co., Ltd. Light emitting diode having extensions of electrodes for current spreading
JP2008543068A (en) * 2005-06-02 2008-11-27 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Light emitting diode chip having contact structure
US20090283789A1 (en) * 2008-05-15 2009-11-19 Epivalley Co., Ltd. Semiconductor Light Emitting Device
US20100078659A1 (en) * 2008-09-29 2010-04-01 Hitachi Cable, Ltd. Light-emitting element
US20110147784A1 (en) * 2009-12-18 2011-06-23 Sharp Kabushiki Kaisha Light emitting device with more uniform current spreading

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004172217A (en) * 2002-11-18 2004-06-17 Matsushita Electric Works Ltd Semiconductor light emitting element
JP2004228554A (en) * 2003-01-17 2004-08-12 Epitech Technology Corp Light emitting diode having distributed electrode
JP2008543068A (en) * 2005-06-02 2008-11-27 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Light emitting diode chip having contact structure
US20090212307A1 (en) * 2005-06-02 2009-08-27 Johannes Baur Light-emitting diode chip comprising a contact structure
US20060284191A1 (en) * 2005-06-16 2006-12-21 Epistar Corporation Light emitting diode
JP2010504640A (en) * 2006-09-25 2010-02-12 ソウル オプト デバイス カンパニー リミテッド Light emitting diode with electrode extension for current spreading
WO2008038842A1 (en) * 2006-09-25 2008-04-03 Seoul Opto Device Co., Ltd. Light emitting diode having extensions of electrodes for current spreading
US20090283789A1 (en) * 2008-05-15 2009-11-19 Epivalley Co., Ltd. Semiconductor Light Emitting Device
JP2009278056A (en) * 2008-05-15 2009-11-26 Epivalley Co Ltd Semiconductor light-emitting element
US20100078659A1 (en) * 2008-09-29 2010-04-01 Hitachi Cable, Ltd. Light-emitting element
JP2010080817A (en) * 2008-09-29 2010-04-08 Hitachi Cable Ltd Light-emitting element
US20110147784A1 (en) * 2009-12-18 2011-06-23 Sharp Kabushiki Kaisha Light emitting device with more uniform current spreading
JP2011129890A (en) * 2009-12-18 2011-06-30 Sharp Corp Light-emitting device showing uniform spread of current

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014099491A (en) * 2012-11-14 2014-05-29 Stanley Electric Co Ltd Semiconductor light-emitting element
US9070834B2 (en) 2013-06-18 2015-06-30 Samsung Electronics Co., Ltd. Semiconductor light emitting device
EP2975379A1 (en) * 2014-07-18 2016-01-20 Horiba, Ltd. Particle analysis apparatus
US10254213B2 (en) 2014-07-18 2019-04-09 Horiba, Ltd. Particle analysis apparatus
JP2016072479A (en) * 2014-09-30 2016-05-09 日亜化学工業株式会社 Light emitting element

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