JP2012216767A5 - - Google Patents
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- JP2012216767A5 JP2012216767A5 JP2012003960A JP2012003960A JP2012216767A5 JP 2012216767 A5 JP2012216767 A5 JP 2012216767A5 JP 2012003960 A JP2012003960 A JP 2012003960A JP 2012003960 A JP2012003960 A JP 2012003960A JP 2012216767 A5 JP2012216767 A5 JP 2012216767A5
- Authority
- JP
- Japan
- Prior art keywords
- integer
- ion
- ion implantation
- motomeko
- der
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Claims (4)
- ＣｎＨｘ（ｎは４≦ｎ≦６の整数、ｘは１≦ｘ≦２ｎ+２の整数）で表されるイオン生成用原料を使用し、ＣｍＨｙ+イオン（ｍは４≦ｍ≦６の整数、ｙは１≦ｙ≦２ｍ+２の整数）を生成し、質量分析の後、質量スペクトルにおける相対存在量比のピークが２０％以 上であるＣ ４ Ｈ ｕ （ｕは１≦ｕ≦１０の整数）、Ｃ ５ Ｈ ｖ （ｖは１≦ｖ≦１０の整数）ま たはＣ ６ Ｈ ｗ （ｗは１≦ｗ≦１０の整数）のいずれかの正イオンをウエハに注入するイオン注入方法。
- 前記イオン生成用原料が、Ｃ６Ｈ１２ （シクロヘキサン）である請求項１記載のイオン注入方法。
- 前記イオン生成用原料が、Ｃ５Ｈ８ （シクロペンテン）である請求項１記載のイオン注入方法。
- 前記イオン生成用原料が、Ｃ４Ｈ６ （ブタジエン）である請求項１記載のイオン注入方法。
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012003960A JP5975418B2 (ja) | 2011-03-25 | 2012-01-12 | イオン注入方法 |
| KR1020120029260A KR101371957B1 (ko) | 2011-03-25 | 2012-03-22 | 이온 주입 방법 |
| US13/428,481 US8921240B2 (en) | 2011-03-25 | 2012-03-23 | Ion implantation method |
| TW101110085A TWI457988B (zh) | 2011-03-25 | 2012-03-23 | 離子植入方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011068307 | 2011-03-25 | ||
| JP2011068307 | 2011-03-25 | ||
| JP2012003960A JP5975418B2 (ja) | 2011-03-25 | 2012-01-12 | イオン注入方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012216767A JP2012216767A (ja) | 2012-11-08 |
| JP2012216767A5 true JP2012216767A5 (ja) | 2015-02-19 |
| JP5975418B2 JP5975418B2 (ja) | 2016-08-23 |
Family
ID=46877709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012003960A Active JP5975418B2 (ja) | 2011-03-25 | 2012-01-12 | イオン注入方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8921240B2 (ja) |
| JP (1) | JP5975418B2 (ja) |
| KR (1) | KR101371957B1 (ja) |
| TW (1) | TWI457988B (ja) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102182789B1 (ko) | 2014-06-24 | 2020-11-26 | 에베 그룹 에. 탈너 게엠베하 | 기판의 표면 처리를 위한 방법 및 장치 |
| JP2019091923A (ja) * | 2019-02-07 | 2019-06-13 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | 基板を表面処理するための方法及び装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4096373B2 (ja) * | 1997-03-25 | 2008-06-04 | 住友電気工業株式会社 | 硬質被膜とその製造方法 |
| US7465478B2 (en) | 2000-08-11 | 2008-12-16 | Applied Materials, Inc. | Plasma immersion ion implantation process |
| US6686595B2 (en) | 2002-06-26 | 2004-02-03 | Semequip Inc. | Electron impact ion source |
| US7312162B2 (en) * | 2005-05-17 | 2007-12-25 | Applied Materials, Inc. | Low temperature plasma deposition process for carbon layer deposition |
| JP5583344B2 (ja) * | 2005-12-09 | 2014-09-03 | セムイクウィップ・インコーポレーテッド | 炭素クラスターの注入により半導体デバイスを製造するためのシステムおよび方法 |
| US8183161B2 (en) * | 2006-09-12 | 2012-05-22 | Tokyo Electron Limited | Method and system for dry etching a hafnium containing material |
| JP2010062529A (ja) * | 2008-08-04 | 2010-03-18 | Toshiba Corp | 半導体装置の製造方法 |
| TWI522404B (zh) * | 2009-03-26 | 2016-02-21 | Lintec Corp | A molded body, a manufacturing method thereof, an electronic device element, and an electronic device |
| US8992785B2 (en) * | 2010-01-15 | 2015-03-31 | Tel Epion Inc. | Method for modifying an etch rate of a material layer using energetic charged particles |
| US8343860B1 (en) * | 2010-03-23 | 2013-01-01 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | High C content molecules for C implant |
-
2012
- 2012-01-12 JP JP2012003960A patent/JP5975418B2/ja active Active
- 2012-03-22 KR KR1020120029260A patent/KR101371957B1/ko active IP Right Grant
- 2012-03-23 US US13/428,481 patent/US8921240B2/en not_active Expired - Fee Related
- 2012-03-23 TW TW101110085A patent/TWI457988B/zh not_active IP Right Cessation
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