JP2012212870A5 - - Google Patents

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Publication number
JP2012212870A5
JP2012212870A5 JP2012048692A JP2012048692A JP2012212870A5 JP 2012212870 A5 JP2012212870 A5 JP 2012212870A5 JP 2012048692 A JP2012048692 A JP 2012048692A JP 2012048692 A JP2012048692 A JP 2012048692A JP 2012212870 A5 JP2012212870 A5 JP 2012212870A5
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JP
Japan
Prior art keywords
region
semiconductor layer
photoconductive element
electromagnetic wave
element according
Prior art date
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Abandoned
Application number
JP2012048692A
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English (en)
Japanese (ja)
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JP2012212870A (ja
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Priority to JP2012048692A priority Critical patent/JP2012212870A/ja
Priority claimed from JP2012048692A external-priority patent/JP2012212870A/ja
Publication of JP2012212870A publication Critical patent/JP2012212870A/ja
Publication of JP2012212870A5 publication Critical patent/JP2012212870A5/ja
Abandoned legal-status Critical Current

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JP2012048692A 2011-03-18 2012-03-06 光伝導素子 Abandoned JP2012212870A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012048692A JP2012212870A (ja) 2011-03-18 2012-03-06 光伝導素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011061440 2011-03-18
JP2011061440 2011-03-18
JP2012048692A JP2012212870A (ja) 2011-03-18 2012-03-06 光伝導素子

Publications (2)

Publication Number Publication Date
JP2012212870A JP2012212870A (ja) 2012-11-01
JP2012212870A5 true JP2012212870A5 (cg-RX-API-DMAC7.html) 2015-04-16

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Family Applications (1)

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JP2012048692A Abandoned JP2012212870A (ja) 2011-03-18 2012-03-06 光伝導素子

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US (1) US20120236307A1 (cg-RX-API-DMAC7.html)
JP (1) JP2012212870A (cg-RX-API-DMAC7.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6299958B2 (ja) * 2014-01-30 2018-03-28 セイコーエプソン株式会社 光伝導アンテナ、カメラ、イメージング装置、および計測装置
JP2015148541A (ja) * 2014-02-07 2015-08-20 セイコーエプソン株式会社 光伝導アンテナ、カメラ、イメージング装置、および計測装置
US10241058B2 (en) * 2016-07-05 2019-03-26 Massachusetts Institute Of Technology Systems and methods for quality control of a periodic structure
CN107819058B (zh) * 2017-11-28 2019-07-23 厦门三安光电有限公司 发光二极管
NL2023306B1 (en) * 2019-06-13 2021-01-21 Univ Griffith Optoelectronic coupling platforms and sensors
DE102020213957B3 (de) * 2020-11-06 2021-09-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Fotoleiter und verfahren zu dessen herstellung

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2549384A (en) * 1983-03-11 1984-09-13 Exxon Research And Engineering Company Multi-layered amorphous semiconductor material
US5051804A (en) * 1989-12-01 1991-09-24 The United States Of America As Represented By The United States Department Of Energy Photodetector having high speed and sensitivity
CA2127596C (en) * 1993-07-16 2003-12-02 Hui Chun Liu Multicolour voltage tunable quantum well intersubband infrared photodetector and associated method
JP2006086227A (ja) * 2004-09-14 2006-03-30 Osaka Univ 光スイッチ
DE602005026049D1 (de) * 2004-12-07 2011-03-03 Picometrix Llc Fotoleitfähiges bauelement
JP4565198B2 (ja) * 2005-03-01 2010-10-20 国立大学法人大阪大学 高分解・高速テラヘルツ分光計測装置

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