JP7041421B2 - 熱デバイス - Google Patents
熱デバイス Download PDFInfo
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- JP7041421B2 JP7041421B2 JP2016172073A JP2016172073A JP7041421B2 JP 7041421 B2 JP7041421 B2 JP 7041421B2 JP 2016172073 A JP2016172073 A JP 2016172073A JP 2016172073 A JP2016172073 A JP 2016172073A JP 7041421 B2 JP7041421 B2 JP 7041421B2
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- Prior art keywords
- terahertz detector
- graphene
- dimensional porous
- porous graphene
- nanoporous graphene
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 103
- 229910021389 graphene Inorganic materials 0.000 claims description 103
- 239000011148 porous material Substances 0.000 claims description 6
- 230000001747 exhibiting effect Effects 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims 1
- 230000004044 response Effects 0.000 description 24
- 230000035945 sensitivity Effects 0.000 description 14
- 239000002356 single layer Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 7
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 230000006872 improvement Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000007783 nanoporous material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
Images
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Description
Claims (5)
- 3次元多孔質グラフェンと、
前記3次元多孔質グラフェン上に対向して配置される一組の電極と
を備え、
前記3次元多孔質グラフェンは、p型の伝導特性を示す前記3次元多孔質グラフェンと
、n型の伝導特性を示す前記3次元多孔質グラフェンとが所定の長さで重なるように接合
されて形成され、
前記一組の電極の一方は、p型の前記3次元多孔質グラフェン上に配置され、
前記一組の電極の他方は、n型の前記3次元多孔質グラフェン上に配置される
ことを特徴とする熱デバイス。 - 請求項1に記載の熱デバイスにおいて、
前記所定の長さは、前記p型の3次元多孔質グラフェンおよび前記n型の3次元多孔質
グラフェンが有する熱拡散長に応じた長さであることを特徴とする熱デバイス。 - 請求項1又は請求項2に記載の熱デバイスにおいて、
前記3次元多孔質グラフェンが有する細孔の直径は、受信する電磁波が有する波長の1
000分の1から10分の1以下の大きさであることを特徴とする熱デバイス。 - 請求項1ないし請求項3のいずれか1項に記載の熱デバイスにおいて、
外部と断熱された状態で前記3次元多孔質グラフェンおよび前記一組の電極を密閉する
容器をさらに備えることを特徴とする熱デバイス。 - 請求項1ないし請求項3のいずれか1項に記載の熱デバイスにおいて、
前記3次元多孔質グラフェンに発生した熱を伝導させる放熱板をさらに備えることを特
徴とする熱デバイス。
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JP2016172073A JP7041421B2 (ja) | 2016-09-02 | 2016-09-02 | 熱デバイス |
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JP2016172073A JP7041421B2 (ja) | 2016-09-02 | 2016-09-02 | 熱デバイス |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018037617A JP2018037617A (ja) | 2018-03-08 |
JP7041421B2 true JP7041421B2 (ja) | 2022-03-24 |
Family
ID=61567642
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JP2016172073A Active JP7041421B2 (ja) | 2016-09-02 | 2016-09-02 | 熱デバイス |
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JP (1) | JP7041421B2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7260736B2 (ja) * | 2018-11-08 | 2023-04-19 | 富士通株式会社 | 光検出素子、光センサ、及び光検出素子の製造方法 |
CN109849328B (zh) * | 2019-01-18 | 2021-04-02 | 西北工业大学 | 基于均匀石墨烯微滴喷射的3d嵌入式柔性太赫兹超材料微结构制备方法 |
CN111739950B (zh) * | 2019-03-19 | 2022-03-18 | 国家纳米科学中心 | 太赫兹光电探测器 |
WO2021070594A1 (ja) * | 2019-10-10 | 2021-04-15 | ソニーセミコンダクタソリューションズ株式会社 | 電磁波検出装置、電磁波検出システム、及び電磁波検出方法 |
JP7477766B2 (ja) | 2020-09-25 | 2024-05-02 | 富士通株式会社 | 光検出装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015031666A (ja) | 2013-08-06 | 2015-02-16 | 日本電信電話株式会社 | センサ素子 |
JP2015070249A (ja) | 2013-10-01 | 2015-04-13 | 富士フイルム株式会社 | 熱電変換材料、熱電変換素子、及び熱電変換素子の製造方法 |
WO2015175060A2 (en) | 2014-02-17 | 2015-11-19 | William Marsh Rice University | Laser induced graphene materials and their use in electronic devices |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3447915B2 (ja) * | 1997-04-28 | 2003-09-16 | シャープ株式会社 | 熱電素子及びそれを用いた熱電素子モジュール |
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2016
- 2016-09-02 JP JP2016172073A patent/JP7041421B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015031666A (ja) | 2013-08-06 | 2015-02-16 | 日本電信電話株式会社 | センサ素子 |
JP2015070249A (ja) | 2013-10-01 | 2015-04-13 | 富士フイルム株式会社 | 熱電変換材料、熱電変換素子、及び熱電変換素子の製造方法 |
WO2015175060A2 (en) | 2014-02-17 | 2015-11-19 | William Marsh Rice University | Laser induced graphene materials and their use in electronic devices |
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