JP2012210098A - Electric power conversion apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electric power conversion apparatus which suppresses vibrations of a semiconductor lamination unit to a frame located in a direction that intersects the lamination direction of the semiconductor lamination unit without inhibiting the transmission of a pressing force applied to the semiconductor lamination unit by a pressurizing member.SOLUTION: An electric power conversion apparatus 1 includes: a semiconductor lamination unit 10 formed by semiconductor modules 11 and cooling tubes 120; and a pressurizing member 4 pressurizing the semiconductor lamination unit 10 in the lamination direction X. Further, the electric power conversion apparatus 1 has: a contact plate 3 disposed between the pressurizing member 4 and the semiconductor lamination unit 10; and a frame 21 in which the semiconductor lamination unit 10, the pressurizing member 4, and the contact plate 3 are disposed on the inner side thereof. The semiconductor lamination unit 10 has vibration regulating means 34 regulating vibrations in a direction that intersects the lamination direction X while allowing the movements of the contact plate 3 in the lamination direction X.

Description

  The present invention relates to a power conversion device including a cooling means for a semiconductor module constituting a power conversion circuit.

A power conversion circuit such as a DC-DC converter circuit or an inverter circuit is used to generate drive power for energizing an AC motor that is a power source of an electric vehicle or a hybrid vehicle, for example.
Generally, in an electric vehicle, a hybrid vehicle, and the like, a large driving power is required to secure a large driving torque from an AC motor. Therefore, in the power conversion circuit that generates the drive power for the AC motor, heat generated from the semiconductor module including the power semiconductor element such as IGBT constituting the power conversion circuit tends to increase.

In view of this, there has been proposed a power conversion device in which a plurality of cooling pipes through which a coolant flows are stacked with a semiconductor module so that the plurality of semiconductor modules constituting the power conversion circuit can be cooled (Patent Document 1, Patent). Reference 2).
As shown in FIGS. 12 and 13, the power conversion device 9 includes a semiconductor laminated unit 92, which is a laminated body of a semiconductor module 921 and a cooling pipe 922, arranged inside a frame 93. The frame 93 has an opening 931 that opens in a direction orthogonal to the stacking direction. Further, inside the frame 93, a pressure member 96 that pressurizes the semiconductor lamination unit 92 in the lamination direction is disposed at one end of the semiconductor lamination unit 92 in the lamination direction.

By the way, as described above, the power conversion device 9 may be installed in an environment that is susceptible to vibration, such as an electric vehicle or a hybrid vehicle.
In the power conversion device 9, the semiconductor stacking unit 92 is fixed in the stacking direction by pressing the semiconductor stacking unit 92 against the inner wall portion of the frame 93 with a pressurizing member 96. For this reason, even if the vibration is applied, the semiconductor lamination unit 92 can be prevented from vibrating with respect to the frame 93 in the lamination direction.

JP 2007-166819 A JP 2007-166820 A

  However, there is no means for fixing the semiconductor laminated unit 92 to the frame 93 in the opening direction of the opening 931 in the frame 93 (hereinafter referred to as the opening direction). Therefore, there is a possibility that a deviation may occur between the semiconductor module 921 and the cooling pipe 922 in the semiconductor laminated unit 92, particularly in an installation environment in which the opening direction is also susceptible to vibration. If it does so, there exists a possibility of causing the situation that the cooling function of the semiconductor module 921 in the semiconductor lamination | stacking unit 92 falls.

  In addition, it may be possible to regulate vibration of the semiconductor multilayer unit 92 by fixing a part of the semiconductor multilayer unit 92 or an inclusion between the semiconductor multilayer unit 92 and the pressure member 96 to the frame 93. In this case, transmission of the applied pressure to the semiconductor laminated unit 92 by the pressurizing member 96 is hindered.

  The present invention has been made in view of such problems, and a semiconductor with respect to a frame in a direction orthogonal to the stacking direction of the semiconductor stacked unit without obstructing the transmission of the applied pressure to the semiconductor stacked unit by the pressure member. An object of the present invention is to provide a power conversion device that can suppress vibration of a laminated unit.

The present invention provides a semiconductor multi-layer unit in which a plurality of semiconductor modules constituting a part of a power conversion circuit and a plurality of cooling pipes for cooling the plurality of semiconductor modules from both main surfaces are stacked,
A pressure member disposed on one end side in the stacking direction of the semiconductor stacking unit and pressurizing the semiconductor stacking unit in the stacking direction;
An abutting plate interposed between the pressure member and the semiconductor multilayer unit and in surface contact with the semiconductor multilayer unit;
A frame in which the semiconductor laminated unit, the pressure member, and the contact plate are disposed inside;
And a vibration regulating means for regulating vibration of the contact plate in a direction perpendicular to the stacking direction while allowing the contact plate to move in the stacking direction with respect to the frame. (Claim 1).

  The power converter according to the present invention includes a vibration restricting unit that restricts vibration of the contact plate in a direction orthogonal to the stacking direction. Therefore, it is possible to suppress the vibration in the direction orthogonal to the stacking direction of the semiconductor stacked unit that is pressurized in the stacking direction via the contact plate. Therefore, a shift between the semiconductor module and the cooling pipe can be prevented.

  In particular, the vibration regulating means regulates the vibration of the semiconductor laminated unit by regulating the vibration of the contact plate. The contact plate is interposed between the pressure member and the semiconductor lamination unit, and vibration in a direction orthogonal to the lamination direction in this portion tends to increase. Therefore, vibration of the semiconductor laminated unit can be effectively suppressed by restricting the vibration of the contact plate in this portion by the vibration restricting means.

  The vibration restricting means allows movement of the contact plate in the stacking direction with respect to the frame. For this reason, even if the vibration regulating means is provided, it does not hinder the pressure applied by the pressure member from being transmitted to the semiconductor laminated unit. Therefore, the pressing force of the pressure member can be sufficiently transmitted to the semiconductor laminated unit.

  As described above, according to the present invention, the vibration of the semiconductor multilayer unit with respect to the frame in the direction orthogonal to the stacking direction of the semiconductor multilayer unit is suppressed without impeding the transmission of the applied pressure to the semiconductor multilayer unit by the pressure member. The power converter device which can be provided can be provided.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. FIG. 2 is a cross-sectional view taken along line AA in FIG. FIG. 3 is a partial explanatory view showing vibration regulating means in the first embodiment. The principal part sectional drawing which shows the power converter device in Example 3. FIG. FIG. 10 is a cross-sectional view of a main part showing an example of the shape of a back plate in Example 3. The principal part sectional drawing which shows the power converter device in Example 4. FIG. The principal part sectional drawing which shows the power converter device in Example 5. FIG. FIG. 10 is a main part sectional view showing a shape example of a back plate in Example 5; The principal part sectional drawing which shows the power converter device in Example 6. FIG. The principal part sectional drawing which shows the power converter device in Example 7. FIG. FIG. 11 is a cross-sectional view taken along line B-B in FIG. 10. Explanatory drawing of the power converter device in background art. FIG. 13 is a cross-sectional view taken along line CC in FIG. 12.

  In the power converter, the vibration restricting means can be configured by, for example, disposing a member other than the contact plate or the frame, or configured by the shape of the contact plate or the frame. You can also

  Further, it is preferable that the vibration regulating means is made of an elastic member interposed directly or indirectly between the frame and the contact plate. In this case, it is possible to regulate the vibration of the contact plate in the direction perpendicular to the stacking direction while effectively allowing the contact plate to move in the stacking direction with respect to the frame. That is, it is possible to suppress the vibration in the direction orthogonal to the stacking direction of the semiconductor stacked unit while absorbing the vibration by the vibration restricting means made of an elastic member.

  Further, it is preferable that the vibration regulating means is fixed directly or indirectly to the frame and the contact plate. In this case, the relative movement amount between the vibration regulating means, the frame and the contact plate can be regulated more reliably. Thereby, the vibration suppression effect by the said vibration control means can be heightened more. Further, the vibration regulating means made of an elastic body can follow the displacement of the contact plate due to the pressure applied from the pressure member to the semiconductor multilayer unit while changing the shape. Therefore, even if the vibration regulating means is fixed to the frame and the contact plate, the pressure applied by the pressure member is sufficiently transmitted to the semiconductor laminated unit.

  The vibration restricting means is arranged to be slidable in the laminating direction with respect to the frame or a fixing member fixed thereto, or the contact plate or a fixing member fixed thereto. (Claim 4). In this case, it is possible to suppress vibration in a direction perpendicular to the stacking direction while more efficiently transmitting the pressing force in the stacking direction generated by the pressing member to the semiconductor stacking unit.

  The contact plate includes a contact plate portion that forms a contact surface that contacts the semiconductor lamination unit, and a flange portion that extends from the contact plate portion to the pressure member in the stacking direction. Preferably, the vibration restricting means is disposed on the surface of the flange portion opposite to the pressure member (claim 5). In this case, it is possible to prevent foreign matters generated from the vibration regulating means from adhering to the pressure member.

  In addition, the contact plate preferably stands on the side opposite to the pressure member from the flange, and has a screen portion disposed between the vibration restricting means and the semiconductor laminated unit ( Claim 6). In this case, it is possible to prevent foreign matters generated from the vibration regulating means from adhering to the semiconductor multilayer unit. As a result, it is possible to prevent problems such as poor conduction and poor insulation due to foreign matters adhering to the semiconductor laminated unit and the electrical contacts in the semiconductor laminated unit.

  Moreover, a coil spring can be used for the said pressurizing member (Claim 7). In this case, the vibration regulation effect of the semiconductor multilayer unit by the vibration regulation means can be sufficiently exhibited. That is, since the coil spring is easily bent in a direction orthogonal to the expansion / contraction direction, when the pressure member is a coil spring, the coil spring is likely to vibrate in a direction orthogonal to the stacking direction of the semiconductor stacked unit. Therefore, by providing the vibration regulating means, it is possible to effectively prevent vibration of the semiconductor multilayer unit.

  Further, it is preferable that the vibration restricting means is configured to restrict the vibration of the contact plate in two directions orthogonal to the stacking direction and orthogonal to each other. In this case, vibrations in all directions orthogonal to the stacking direction in the semiconductor stacked unit can be effectively prevented.

Example 1
The power converter device 1 concerning the Example of this invention is demonstrated using FIG.1 and FIG.2.
The power conversion device 1 of this example includes a semiconductor multilayer unit 10 and a pressure member 4 that pressurizes the semiconductor multilayer unit 10 in the stacking direction X. The semiconductor laminated unit 10 is formed by laminating a plurality of semiconductor modules 11 constituting a part of a power conversion circuit and a plurality of cooling pipes 120 for cooling the plurality of semiconductor modules 11 from both main surfaces. The pressure member 4 is disposed on one end side in the stacking direction X of the semiconductor stacked unit 10.
The power conversion device 1 includes a contact plate 3 that is interposed between the pressure member 4 and the semiconductor multilayer unit 10 and that is in surface contact with the semiconductor multilayer unit 10, and the semiconductor multilayer unit 10 and the pressure member 4. And a frame 21 in which the contact plate 3 is disposed inside. Further, the semiconductor lamination unit 10 has a vibration regulating means 34 that regulates vibration in a direction orthogonal to the lamination direction X of the contact plate 3 while allowing movement of the contact plate 3 in the lamination direction X with respect to the frame 21. is doing.

The power conversion device 1 of this example will be described in further detail.
In this example, the direction in which the semiconductor module 11 and the cooling pipe 120 are stacked is the stacking direction X, the longitudinal direction of the cooling pipe 120 is the horizontal direction Y, and the direction orthogonal to both the stacking direction X and the horizontal direction Y The height direction Z will be described below.
In the stacking direction X, the side on which the pressure member 4 is disposed with respect to the semiconductor stacking unit 10 is defined as the front, and the opposite side is defined as the rear. Further, in the height direction Z, a side on which a lid 22 to be described later is disposed is an upper side, and an opposite side is a lower side.

As shown in FIGS. 1 and 2, the power conversion device 1 includes a semiconductor stacked unit 10 that forms part of the power conversion circuit, a pressing member 4 that pressurizes the semiconductor stacked unit 10 in the stacking direction X, and a semiconductor stacked unit. 10 and a frame 21 that encloses the pressure member 4.
As shown in FIGS. 1 and 2, the semiconductor stacked unit 10 includes a plurality of semiconductor modules 11 that constitute a part of the power conversion circuit, and a plurality of cooling pipes 120 that cool the plurality of semiconductor modules 11 from both main surfaces. Are laminated.

  The semiconductor module 11 includes a switching element such as an IGBT (Insulated Gate Bipolar Transistor) or a MOSFET (MOS field effect transistor). The semiconductor module 11 includes a flat plate-shaped main body 111 formed by resin-molding a switching element, and a main electrode terminal 112 and a control terminal 113 that protrude in opposite directions from the end surface of the main body 111. The semiconductor module 11 is stacked with the cooling pipe 120 so that the normal direction of the main surface of the flat plate-shaped main body 111 is the stacking direction X. The main electrode terminal 112 protrudes downward in the height direction Z, and the control terminal 113 protrudes upward in the height direction Z. The main electrode terminal 112 is connected to a bus bar (not shown), and controlled power is input to and output from the semiconductor module 11 through the bus bar. The control terminal 113 is connected to a control circuit board (not shown), and receives a control current for controlling the switching element. Two semiconductor modules 11 are arranged in parallel between the pair of cooling pipes 120.

  The cooling pipe 120 is connected to another adjacent cooling pipe 120 through a connecting pipe 123 at both ends in the longitudinal direction (lateral direction Y). A refrigerant introduction pipe 121 and a refrigerant discharge pipe 122 are connected to both ends in the lateral direction Y of the cooling pipe 120 arranged at one end in the stacking direction X. The cooler 12 is configured by the cooling pipe 120, the connecting pipe 123, the refrigerant introduction pipe 121, and the refrigerant discharge pipe 122. The cooler 12 is made of a metal such as aluminum.

  As shown in FIG. 1, the refrigerant introduction pipe 121 and the refrigerant discharge pipe 122 are provided so as to protrude forward from the front surface of the cooling pipe 120 disposed at the front end portion of the semiconductor multilayer unit 10. The cooling medium introduced from the refrigerant introduction pipe 121 passes through the connection pipe 123 as appropriate, is distributed to each cooling pipe 120, and flows in the longitudinal direction (lateral direction Y). The cooling medium exchanges heat with the semiconductor module 11 while flowing through each cooling pipe 120. The cooling medium whose temperature has been increased by heat exchange passes through the connecting pipe 123 on the downstream side as appropriate, is guided to the refrigerant discharge pipe 122, and is discharged. Examples of the cooling medium include natural refrigerants such as water and ammonia, water mixed with ethylene glycol-based antifreeze, fluorocarbon refrigerants such as fluorinate, chlorofluorocarbon refrigerants such as HCFC123 and HFC134a, and alcohol-based alcohols such as methanol and alcohol. A refrigerant such as a refrigerant or a ketone-based refrigerant such as acetone can be used.

The frame 21 has an opening 217 that opens upward. A lid 22 that closes the opening 217 is fixed to the upper surface of the frame 21.
As shown in FIG. 2, the frame 21 includes a rectangular bottom portion 211 disposed below the semiconductor multilayer unit 10 and a wall portion 212 erected upward on the outer periphery of the bottom portion 211. A bottom terminal insertion hole 216 through which the main electrode terminal 112 of the semiconductor module 11 is inserted is formed in the bottom portion 211. Further, the wall portion 212 includes a pair of side wall portions 215 that connect the front wall portion 213 and the rear wall portion 214 disposed on both sides in the stacking direction X, and the front wall portion 213 and the rear wall portion 214 at both ends thereof. And have.

As shown in FIG. 2, the lid body 22 has a lid body terminal insertion hole 221 through which the control terminal 113 of the semiconductor module 11 is inserted, and the four wall portions 212 of the frame 21 are attached to the upper end by bolts (not shown). Arranged so as to be linked.
The frame 21 and the lid body 22 can be made of a metal or an alloy such as aluminum or stainless steel, for example.

  As shown in FIGS. 1 and 2, the semiconductor stacked unit 10 is pressed and held inside the frame 21 by the urging force of the pressing member 4. The pressing member 4 is formed of a coil spring, and the semiconductor stacked unit 10 is pressed and held in the stacking direction X by the biasing force. The pressing member 4 is disposed between the front wall portion 213 and the front surface of the semiconductor stacked unit 10.

A contact plate 3 that is in surface contact with the semiconductor multilayer unit 10 is disposed between the pressure member 4 and the semiconductor multilayer unit 10.
As shown in FIG. 2, the contact plate 3 includes a contact plate portion 31 disposed between the rear end portion of the pressing member 4 and the front surface of the semiconductor multilayer unit 10, and a front side from the upper end of the contact plate portion 31. And a leg plate portion 33 erected forward from the lower end of the contact plate portion 31.
On the upper surface of the flange portion 32 and the lower surface of the leg plate portion 33, vibration restricting means 34 are respectively disposed. The vibration regulating means 34 in this example is made of an elastic member having a rectangular parallelepiped shape, and is bonded and fixed to the flange portion 32 and the leg plate portion 33, respectively. The vibration restricting means 34 fixed to the flange portion 32 is adhered and fixed to the lid 22 which is a fixing member fixed to the frame 21, and the vibration restricting means 34 fixed to the leg plate portion 33 is adhered to the bottom portion 211 of the frame 21. It is fixed.

  In assembling the power conversion device 1, the contact plate 3 and the pressure member 4 that fix the semiconductor laminated unit 10 and the vibration regulating means 34 are arranged inside the frame 21, and then a lid is placed on the upper end of the wall portion 212 of the frame 21. By coupling the body 22, the vibration restricting means 34 provided on the collar portion 32 abuts on the lower surface of the lid body 22, and the vibration restricting means 34 provided on the upper surface of the leg plate portion 33 is placed on the upper surface of the bottom portion 211 of the frame 21. Abut. At this time, it is preferable that the elastic member is compressed by the frame 21 as long as the frame 21 is not deformed. Thereby, an urging force is generated in the elastic member, and the vibration of the semiconductor multilayer unit 10 can be more reliably prevented.

  In this example, the refrigerant introduction pipe 121 and the refrigerant discharge pipe 122 are arranged on the front side of the semiconductor laminated unit 10, but the present invention is not limited to this, and may be arranged on the side opposite to the pressurizing member 4. For example, the refrigerant introduction pipe 121 and the refrigerant discharge pipe 122 may protrude rearward from the rear surface of the cooling pipe 120 disposed at the rear end portion.

  Further, the refrigerant introduction pipe 121 and the refrigerant discharge pipe 122 may be arranged so as to protrude in one direction as in this example, or may be arranged so as to protrude in different directions. For example, one of the refrigerant introduction pipe 121 and the refrigerant discharge pipe 122 is disposed so as to protrude forward from the cooling pipe 120 disposed in front of the semiconductor multilayer unit 10, and the other is disposed in the semiconductor multilayer unit 10. You may arrange | position so that it may protrude toward the back from the cooling pipe 120 distribute | arranged back.

  Further, as shown in this example, when the vibration restricting means 34 is fixed to the frame 21 and the lid 22, the vibration restricting means 34 is arranged so that the longitudinal direction of the rectangular parallelepiped formed by the vibration restricting means 34 is the horizontal direction Y. It is preferable to do. In this case, the vibration in the lateral direction Y can be more effectively suppressed.

Next, the effect in this example is demonstrated.
The power converter 1 includes a vibration restricting unit 34 that restricts vibration in a direction orthogonal to the stacking direction X of the contact plates 3. Therefore, it is possible to suppress vibration in a direction orthogonal to the stacking direction X of the semiconductor stacking unit 10 pressurized in the stacking direction X via the contact plate 3. Therefore, the deviation between the semiconductor module 11 and the cooling pipe 120 can be prevented.

  In particular, the vibration regulating means 34 regulates the vibration of the semiconductor multilayer unit 10 by regulating the vibration of the contact plate 3. The contact plate 3 is interposed between the pressing member 4 and the semiconductor lamination unit 10, and the vibration in the direction orthogonal to the lamination direction X tends to increase at this portion. Therefore, vibration of the semiconductor laminated unit 10 can be effectively suppressed by the vibration restricting means 34 restricting vibration of the contact plate 3 in this portion.

  Further, the vibration restricting means 34 allows the movement of the contact plate 3 in the stacking direction X with respect to the frame 21. Therefore, even if the vibration restricting means 34 is provided, it does not hinder the applied pressure of the pressure member 4 from being transmitted to the semiconductor multilayer unit 10. Therefore, the pressing force of the pressing member 4 can be sufficiently transmitted to the semiconductor laminated unit 10.

  The vibration regulating means 34 is made of an elastic member interposed between the frame 21 and the lid body 2 and the contact plate 3. Therefore, the vibration in the direction orthogonal to the stacking direction X of the contact plate 3 can be restricted while effectively allowing the contact plate 3 to move in the stacking direction X with respect to the frame 21. That is, it is possible to suppress the vibration in the direction orthogonal to the stacking direction X of the semiconductor stacked unit 10 while absorbing the vibration by the vibration regulating means 34 made of an elastic member.

  Further, the vibration regulating means 34 is fixed to the frame 21 and the contact plate 3. Therefore, the relative movement amount between the vibration regulating means 34 and the frame 21 and the contact plate 3 can be more reliably regulated. Thereby, the vibration suppression effect by the vibration control means 34 can be heightened more. Further, the vibration regulating means 34 made of an elastic body can follow the displacement of the contact plate 3 due to the pressure applied from the pressing member 4 to the semiconductor multilayer unit 10 while changing the shape. Therefore, even if the vibration regulating means 34 is fixed to the frame 21 and the contact plate 3, the pressure applied by the pressure member 4 is sufficiently transmitted to the semiconductor stacked unit 10.

  The contact plate 3 includes a contact plate portion 31 that forms a contact surface that contacts the semiconductor stacked unit 10, and a flange portion 32 that extends from the contact plate portion 31 to the pressure member 4 in the stacking direction X. The vibration regulating means 34 is disposed on the surface of the flange 32 opposite to the pressure member 4. Therefore, it is possible to prevent the foreign matter generated from the vibration regulating means 34 from adhering to the pressure member 4.

  The pressure member 4 can be a coil spring. Therefore, the vibration regulating effect of the semiconductor multilayer unit 10 by the vibration regulating means 34 can be sufficiently exhibited. That is, since the coil spring is easily bent in a direction orthogonal to the expansion / contraction direction, when the pressing member 4 is a coil spring, the coil spring is likely to vibrate in a direction orthogonal to the stacking direction X of the semiconductor stacked unit 10. Therefore, by providing the vibration regulating means 34, it is possible to effectively prevent vibration of the semiconductor laminated unit 10.

  As described above, according to this example, the semiconductor stacked unit with respect to the frame 21 in the direction orthogonal to the stacking direction X of the semiconductor stacked unit 10 without hindering the transmission of the applied pressure to the semiconductor stacked unit 10 by the pressing member 4. Thus, it is possible to provide the power conversion device 1 that can suppress the vibration of 10.

(Example 2)
This example is an example in which the vibration regulating means 34 is changed to a low friction member in the power conversion apparatus of the first embodiment shown in FIGS. 1 and 2. In this example, the vibration regulating means 34 is not fixed to the frame 21 and the lid body 22. That is, it is configured to be slidable between the frame 21 and the lid body 22 and the vibration regulating means 34, and the contact plate 3 can move in the stacking direction X.
In this example, the vibration regulating means 34 is preferably a low friction member made of a low friction resin such as a fluororesin or a metal having a low friction coating. Moreover, it is preferable to apply a low friction process such as a low friction coating to the upper surface of the bottom portion 211 of the frame 21 and the lower surface of the lid body 22. In this case, the slidability between the vibration regulating means 34 and the frame 21 and the lid 22 can be improved, and the contact plate 3 can be moved smoothly.
Other configurations are the same as those of the first embodiment.

In the power conversion device 1 of the present example, the vibration regulating means 34 is disposed so as to be slidable in the stacking direction X with respect to the frame 21 and the lid body 22. Therefore, the vibration in the direction orthogonal to the stacking direction X can be suppressed while the pressure in the stacking direction X generated by the pressing member 4 is more efficiently transmitted to the semiconductor stacking unit 10.
Moreover, the same effect as Example 1 can be obtained.

(Example 3)
In this example, as shown in FIGS. 4 and 5, the vibration regulating means 34 is configured by the contact plate 3.
The abutment plate 3 shown in FIG. 4 has its flange 32 abutted on the lid 22 of the frame 21 and the leg plate 33 abutted on the bottom 211 of the frame 21. As a result, the contact plate 3 itself constitutes a vibration regulating means 34 that regulates the vibration in the height direction Z of the contact plate 3.

  In this example, it is preferable that the contact surfaces of the contact plate 3, the frame 21, and the lid body 22 are subjected to a low friction process such as a low friction coating. In this case, the slidability between the vibration regulating means 34 and the frame 21 and the lid 22 can be improved, and the contact plate 3 can be moved smoothly.

Further, as shown in FIG. 5, the contact plate 3 can be configured by the contact plate portion 31 without forming the flange portion 32 and the leg plate portion 33. In this case, the upper end of the contact plate portion 31 is in contact with the lid 22, and the lower end of the contact plate portion 31 is in contact with the bottom portion 211 of the frame 21.
Other configurations are the same as those of the first embodiment.
In this example, the same effect as that of the second embodiment can be obtained.

Example 4
In this example, as shown in FIG. 6, an elastic member as a vibration restricting means 34 is provided on the collar portion 32 of the contact plate 3, and the leg plate portion 33 of the contact plate 3 is in contact with the frame 21.
In this example, the vibration regulating means 34 is bonded and fixed to the flange portion 32 and the lid body 22.
Other configurations are the same as those of the first embodiment.
Also in this example, the same effect as Example 1 can be obtained.

(Example 5)
In this example, as shown in FIGS. 7 and 8, the flange portion 32 of the contact plate 3 is extended forward and a partition portion 35 is provided.
The screen part 35 is erected on the opposite side of the pressing member 4 from the collar part 32, and is provided between the vibration regulating means 34 and the semiconductor laminated unit 10.
In this example, as shown in FIG. 7, the flange portion 32 and the partition portion 35 are joined to a flat contact plate portion 31 with a substantially L-shaped joining member 351 formed by the flange portion 32 and the partition portion 35. May be formed. Moreover, as shown in FIG. 8, you may form the collar part 32 and the partition part 35 by a bending process.
The vibration regulating means 34 is adhesively fixed to the collar portion 32 and is slidably disposed with respect to the lid body 22.
Other configurations are the same as those of the first embodiment.

  In the power conversion device 1 of this example, since the contact plate 3 includes the flange portion 32, it is possible to prevent foreign matter from adhering to the pressing member 4. Therefore, even if foreign matter such as wear powder is generated by sliding between the vibration regulating means 34 and the lid body 22, it is possible to effectively prevent foreign matter from adhering to the pressure member 4.

Further, the contact plate 3 is provided on the opposite side of the pressing member 4 from the flange portion 321 and has a partition portion 35 disposed between the vibration regulating means 34 and the semiconductor laminated unit 10. . Therefore, it is possible to prevent foreign matters generated from the vibration regulating means 34 from adhering to the semiconductor multilayer unit 10. As a result, it is possible to prevent problems such as poor conduction and poor insulation due to foreign matters adhering to the semiconductor multilayer unit 10 and the electrical contacts in the semiconductor multilayer unit 10.
Also in this example, the same effect as Example 1 can be obtained.
The vibration regulating means 34 can be fixed to the lid 34 and can be slid between the vibration regulating means 34 and the flange portion 32.

(Example 6)
In this example, as shown in FIG. 9, vibration regulating means 34 is provided on the upper surface of the flange portion 32 of the contact plate 3, and the lower end of the contact plate 3 is arranged away from the frame 21. In this example, the vibration restricting means 34 is made of an elastic member, and the vibration restricting means 34 is fixed to both the flange portion 32 and the lid body 22. Further, the vibration regulating means 34 may be provided on the leg plate portion 33 and fixed to both the leg plate portion 33 and the bottom portion 211 of the frame 21, and the upper end of the contact plate 3 may be formed away from the lid body 22.
Other configurations are the same as those of the first embodiment.
Also in this example, the same effect as Example 1 can be obtained.

(Example 7)
In this example, as shown in FIGS. 10 and 11, a rail member 343 is interposed between the vibration regulating means 34 and the contact plate 3.
The vibration regulating means 34 is fixed to the lower surface of the lid body 22. The rail member 343 is fixed to the upper surface of the flange portion 32 and holds the vibration regulating means 34 so as to be slidable in the stacking direction X. The rail member 343 includes a pair of rail wall portions 344 formed parallel to each other in the stacking direction X, and a rail bottom portion 345 that connects lower ends of the pair of rail wall portions 344. The vibration restricting means 34 is slidably held between a rail bottom 345 and a pair of rail walls 344 in the rail member 343.
Moreover, it is preferable that the rail member 343 and the vibration regulating means 34 are configured to reduce the frictional resistance between them.
Other configurations are the same as those of the first embodiment.

The vibration restricting means 34 is restricted by the rail member 343 from vibrating the contact plate 3 in two directions (lateral direction Y and height direction Z) perpendicular to the stacking direction X and perpendicular to each other. Therefore, vibrations in all directions orthogonal to the stacking direction X in the semiconductor stacked unit 10 can be effectively prevented.
Moreover, the same effect as Example 2 can be obtained.

  Further, the pressing member 4 is not limited to a coil spring, and various members such as a spring member such as a leaf spring and other elastic bodies can be used.

DESCRIPTION OF SYMBOLS 1 Power converter 10 Semiconductor laminated unit 11 Semiconductor module 120 Cooling pipe 21 Frame 3 Contact plate 31 Contact plate part 34 Vibration regulation means 4 Pressure member

Claims (8)

A plurality of semiconductor modules constituting a part of the power conversion circuit and a plurality of cooling modules for cooling the plurality of semiconductor modules from both main surfaces;
A pressure member disposed on one end side in the stacking direction of the semiconductor stacking unit and pressurizing the semiconductor stacking unit in the stacking direction;
An abutting plate interposed between the pressure member and the semiconductor multilayer unit and in surface contact with the semiconductor multilayer unit;
A frame in which the semiconductor laminated unit, the pressure member, and the contact plate are disposed inside;
And a vibration regulating means for regulating vibration of the contact plate in a direction perpendicular to the stacking direction while allowing the contact plate to move in the stacking direction with respect to the frame.   2. The power conversion device according to claim 1, wherein the vibration restricting means includes an elastic member interposed directly or indirectly between the frame and the contact plate.   3. The power conversion device according to claim 2, wherein the vibration regulating means is fixed directly or indirectly to the frame and the contact plate.   3. The power conversion device according to claim 1, wherein the vibration restricting unit includes the lamination layer between the frame or a fixing member fixed to the frame and the contact plate or the fixing member fixed thereto. A power conversion device arranged to be slidable in a direction.   5. The power conversion device according to claim 1, wherein the contact plate includes a contact plate portion that forms a contact surface that contacts the semiconductor stacked unit, and the stacked portion from the contact plate portion. A power conversion device comprising: a flange portion extending in a direction toward the pressure member, wherein the vibration regulating means is disposed on a surface of the flange portion opposite to the pressure member.   6. The power conversion device according to claim 5, wherein the contact plate is erected on the opposite side of the pressing member from the flange portion and is disposed between the vibration restricting unit and the semiconductor stacked unit. A power converter characterized by having a partition.   The power converter according to any one of claims 1 to 6, wherein the pressurizing member includes a coil spring.   The power conversion device according to any one of claims 1 to 7, wherein the vibration regulating means is configured to regulate vibration of the contact plate in two directions orthogonal to the stacking direction and orthogonal to each other. A power converter characterized by comprising:

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