JP2012201891A - Insulating substrate and wiring substrate, semiconductor package and led package each using the insulating substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an insulating substrate that provides a semiconductor package and an LED package excellent in all of insulation and heat dissipation, and a wiring substrate, a semiconductor package, and an LED package each using the insulating substrate.SOLUTION: The insulating substrate 1 includes an aluminum substrate 2 and an insulating layer 3 provided at least a part of the surface of the aluminum substrate 2, wherein the insulating layer 3 is an anodized coating of aluminum. The anodized coating includes an insulating region A with a film thickness (T) of 20 nm-80 μm and an insulating region B with a film thickness (T) of 2-1,000 μm, and a ratio (TT) of the film thickness of the insulating region A to the film thickness of the insulating region B is 2-2,000.

Description

  The present invention relates to an insulating substrate used for a semiconductor element, and more particularly to an insulating substrate used for a high-power power semiconductor or a light emitting diode (hereinafter referred to as “LED”) package.

Conventionally, a metal substrate having an insulating layer has been used as a substrate for mounting an element that generates a large amount of heat, such as a power semiconductor or an LED, in consideration of heat dissipation and an insulating layer.
For example, a substrate in which an anodized film (metal oxide film) is provided on the surface of a metal substrate such as an aluminum substrate has been proposed (see, for example, Patent Documents 1 to 5).

Japanese Utility Model Publication No. 55-154564 JP 7-14938 A JP 2006-313321 A JP 2007-251176 A International Publication No. 2010/150810

  As a result of studying the substrates described in Patent Documents 1 to 5, the inventor is inferior in insulation (voltage resistance) and heat dissipation (thermal conductivity) depending on the part and thickness where the anodized film is formed. For example, if the thickness of the anodic oxide film is increased from the viewpoint of improving insulation, the heat dissipation is reduced, and if the thickness of the anodic oxide film is decreased from the viewpoint of improving heat dissipation, leakage current from the metal wiring is As a result, it has been found that it is difficult to achieve both excellent insulating properties and thermal conductivity.

  Therefore, an object of the present invention is to provide an insulating substrate that can provide a semiconductor package and an LED package that are excellent in both insulation and heat dissipation, and a wiring substrate, a semiconductor package, and an LED package using the insulating substrate. .

As a result of intensive studies to achieve the above object, the present inventor has found that by using an insulating substrate having two insulating regions having different film thicknesses at a specific ratio, both excellent insulating properties and heat dissipation can be achieved. The present invention has been completed.
That is, the present invention provides the following (1) to (10).

(1) An insulating substrate having an aluminum substrate and an insulating layer provided on at least a part of the surface of the aluminum substrate,
The insulating layer is an anodized film of aluminum,
The anodized film has an insulating region A having a thickness (T _A ) of 20 nm to 80 μm and an insulating region B having a thickness (T _B ) of 2 to 1000 μm,
An insulating substrate in which a ratio (T _B / T _A ) between the film thickness of the insulating region A and the film thickness of the insulating region B is 2 to 2000.

  (2) The insulating substrate according to (1), wherein the total reflectance in the wavelength region of 300 to 700 nm in the insulating region A is 80% or more.

(3) The anodized film that forms the insulating region A is a porous film having micropores,
The insulating substrate according to (1) or (2), wherein the degree of ordering defined by the following formula (i) of the micropore is 20% or more.
Ordering degree (%) = Y / X × 100 (i)
In the above formula (i), X represents the total number of micropores in the measurement range. Y is centered on the center of gravity of one micropore, and when the circle with the shortest radius inscribed in the edge of another micropore is drawn, the center of gravity of the micropore other than the one micropore is inside the circle. This represents the number in the measurement range of the one micropore to be included.

  (4) The insulating substrate according to (1) or (2), wherein the anodized film forming the insulating region A is a nonporous film.

(5) The anodic oxide film has an uneven shape,
The insulating region A forms a recess in the anodic oxide film,
The insulating substrate according to any one of (1) to (4), wherein the insulating region B forms a convex portion of the anodic oxide film.

(6) The aluminum substrate has a convex portion,
An anodized film forming the insulating region A is formed on the surface of the convex portion of the aluminum substrate,
The insulating substrate according to any one of (1) to (4), wherein the anodic oxide film forming the insulating region A and the anodic oxide film forming the insulating region B form substantially the same surface.

  (7) A wiring substrate comprising the insulating substrate according to any one of (1) to (6) and a metal wiring layer provided on an anodized film that forms the insulating region B of the insulating substrate.

  (8) A semiconductor package comprising the wiring substrate according to (7) above and a semiconductor element provided on an anodic oxide film that forms the insulating region A of the insulating substrate.

  (9) An LED package comprising the wiring substrate according to (7) above and an LED light emitting element provided on an anodized film that forms the insulating region A of the insulating substrate.

  (10) The wiring board having the insulating substrate according to (5) and a metal wiring layer provided on an anodized film that forms the insulating region B of the insulating substrate. LED package as described in 9).

  As will be described below, according to the present invention, an insulating substrate capable of providing a semiconductor package and an LED package excellent in both insulation and heat dissipation, and a wiring substrate, a semiconductor package and an LED package using the insulating substrate are provided. Can be provided.

FIG. 1 is a schematic top view (A) and schematic cross-sectional views (B) to (D) showing an example of an embodiment of an insulating substrate of the present invention. FIG. 2 is an explanatory diagram of a method for calculating the degree of ordering of micropores. FIG. 3 is a schematic cross-sectional view illustrating each step in an example of the method for manufacturing an insulating substrate according to the present invention. FIG. 4 is a schematic cross-sectional view illustrating each step in an example of the method for manufacturing an insulating substrate according to the present invention. FIG. 5 is a schematic cross-sectional view illustrating each step in an example of the method for manufacturing an insulating substrate according to the present invention. FIG. 6 is a schematic cross-sectional view illustrating each step in an example of the method for manufacturing an insulating substrate according to the present invention. FIG. 7 is a schematic cross-sectional view illustrating each step in an example of the method for manufacturing an insulating substrate according to the present invention. FIG. 8 is a schematic cross-sectional view illustrating each step in an example of the method for manufacturing an insulating substrate according to the present invention. FIG. 9 is a schematic view of an anodizing apparatus used for anodizing. FIG. 10 is a schematic cross-sectional view showing an example of an embodiment of the wiring board of the present invention. FIG. 11 is a schematic cross-sectional view illustrating each step in an example of the method for manufacturing a wiring board according to the present invention. FIG. 12 is a schematic cross-sectional view showing an example of an embodiment of the semiconductor package of the present invention. FIG. 13 is a schematic cross-sectional view showing an example of an embodiment of the LED package of the present invention.

[Insulated substrate]
Hereinafter, the insulating substrate of the present invention will be described in detail.
The insulating substrate of the present invention is an insulating substrate having an aluminum substrate and an insulating layer provided on at least part of the surface of the aluminum substrate, wherein the insulating layer is an anodized film of aluminum, and the anodized film Has an insulating region A having a film thickness (T _A ) of 20 nm to 80 μm and an insulating region B having a film thickness (T _B ) of 2 to 1000 μm. The film thickness of the insulating region A and the film of the insulating region B The insulating substrate has a thickness ratio (T _B / T _A ) of 2 to 2000.
Next, the structure of the insulating substrate of the present invention will be described with reference to FIG.

As shown in FIG. 1, the insulating substrate 1 of the present invention has an aluminum substrate 2 and an insulating layer 3 provided on the surface of the aluminum substrate 2.
As shown in FIGS. 1B to 1D, the insulating layer 3 includes an insulating region 3A having a film thickness (T _A ) of 20 nm to 80 μm and an insulating film having a film thickness (T _B ) of 2 to 1000 μm. And a region 3B.
In the present invention, the ratio (T _B / T _A ) between the film thickness (T _A ) of the insulating region 3A and the film thickness (T _B ) of the insulating region 3B satisfies 2 to 2000.

Here, in the embodiment shown in FIGS. 1B and 1C, in the insulating substrate 1 of the present invention, the anodic oxide film forming the insulating layer 3 has a concavo-convex shape, and the insulating region 3A is a concave part of the anodic oxide film. The insulating region 3B forms the convex portion of the anodized film. This mode is a preferable mode in the LED package of the present invention to be described later because a fluorescent light emitter is unnecessary.
In the embodiment shown in FIG. 1D, the insulating substrate 1 of the present invention is such that the aluminum substrate 2 has a convex portion, and the anodized film forming the insulating region 3A is on the surface of the convex portion of the aluminum substrate 2. The anodized film that forms the insulating region 3A and the anodized film that forms the insulating region 3B form substantially the same surface.
Below, material, a dimension, a formation method, etc. are explained in full detail about each of an aluminum substrate and an insulating layer.

[Aluminum substrate]
As the aluminum substrate constituting the insulating substrate of the present invention, a known aluminum substrate can be used. In addition to a pure aluminum substrate, an alloy plate containing aluminum as a main component and a trace amount of foreign elements; low-purity aluminum (for example, recycled) A substrate in which high-purity aluminum is vapor-deposited on the material); a substrate in which high-purity aluminum is coated on the surface of a silicon wafer, quartz, glass or the like by a method such as vapor deposition or sputtering; a resin substrate in which aluminum is laminated; it can.
Here, the foreign elements that may be included in the alloy plate include silicon, iron, copper, manganese, magnesium, chromium, zinc, bismuth, nickel, titanium, etc., and the content of the foreign elements in the alloy is It is preferably 10% by mass or less.
Such an aluminum substrate is not particularly limited in terms of composition, preparation method (for example, casting method, etc.), and is described in paragraphs [0031] to [0051] of Patent Document 5 (International Publication No. 2010/150810). The composition, preparation method, and the like can be appropriately employed.

  In the present invention, the aluminum substrate has a thickness of about 0.1 to 2.0 mm, preferably 0.15 to 1.5 mm, and more preferably 0.2 to 1.0 mm. This thickness can be appropriately changed according to the user's wishes or the like.

In the present invention, when a porous film having micropores is used as the anodized film (insulating layer) formed by subjecting the aluminum substrate to an anodizing process to be described later, the surface to be anodized The higher the purity of aluminum, the better.
Specifically, the purity of aluminum is preferably 99.5% by mass or more, more preferably 99.9% by mass or more, and further preferably 99.99% by mass or more.
In particular, when the aluminum purity is in the above range, the regularity of the pore arrangement of the micropores present in the insulating layer formed by performing the anodizing treatment is sufficient, and the luminous efficiency in the LED package of the present invention described later is good. Become.

Furthermore, in the present invention, when the anodizing treatment described later is performed on the aluminum substrate, the surface to be anodized is preferably preliminarily degreased and mirror-finished. When a porous film having micropores is used as an anodic oxide film (insulating layer) formed by oxidation treatment, heat treatment is performed in advance from the viewpoint of improving the regularity of the micropore pore arrangement. preferable.
Moreover, according to the use of the LED material which mounts the insulated substrate of this invention, a roughening process can also be given to the surface of the said aluminum substrate from a viewpoint of forming the surface which scatters light, for example.

<Heat treatment>
When heat treatment is performed, it is preferably performed at 200 to 350 ° C. for about 1 to 60 minutes. Specifically, for example, a method of placing an aluminum substrate in a heating oven can be used.
By performing such heat treatment, the regularity of the arrangement of micropores generated by an anodic oxidation process described later is improved.
Moreover, it is preferable to cool the aluminum substrate after heat treatment rapidly. As a method for cooling, for example, a method of directly putting it into water or the like can be mentioned.

<Degreasing treatment>
The degreasing treatment uses acid, alkali, organic solvent, etc. to dissolve and remove the organic components such as dust, fat, and resin adhered to the surface of the aluminum substrate, and in each treatment described later due to the organic components. This is done for the purpose of preventing the occurrence of defects.

Specifically, as the degreasing treatment, for example, a method in which an organic solvent such as various alcohols (for example, methanol), various ketones (for example, methyl ethyl ketone), benzine, volatile oil or the like is brought into contact with the aluminum substrate surface at room temperature (organic Solvent method); a method of bringing a liquid containing a surfactant such as soap or neutral detergent into contact with the aluminum substrate surface at a temperature from room temperature to 80 ° C., and then washing with water (surfactant method); concentration of 10 to 200 g A method in which an aqueous solution of sulfuric acid / L is brought into contact with the aluminum substrate surface at a temperature from room temperature to 70 ° C. for 30 to 80 seconds and then washed with water; while contacting about seconds, the aluminum substrate surface and the electrolyte by passing a direct current of a current density of 1 to 10 a / dm ² in the cathode, the , A method of neutralizing by bringing a nitric acid aqueous solution having a concentration of 100 to 500 g / L into contact; while bringing various known anodizing electrolytes into contact with the aluminum substrate surface at room temperature, the aluminum substrate surface is used as a cathode and a current density of 1 to A method in which a 10 A / dm ² direct current is applied or an alternating current is applied for electrolysis; an alkaline aqueous solution having a concentration of 10 to 200 g / L is brought into contact with the aluminum substrate surface at 40 to 50 ° C. for 15 to 60 seconds; A method of neutralizing by bringing a nitric acid aqueous solution having a concentration of 100 to 500 g / L into contact; an emulsion obtained by mixing light oil, kerosene, etc. with a surfactant, water, etc. is brought into contact with the aluminum substrate surface at a temperature from room temperature to 50 ° C. Then, a method of washing with water (emulsification and degreasing method); a mixed solution of sodium carbonate, phosphates, surfactant and the like on the surface of the aluminum substrate at a temperature from room temperature to 50 ° C. Contacting 0-180 seconds, then, a method of washing with water (phosphate method); and the like.

  Among these, the organic solvent method, the surfactant method, the emulsion degreasing method, and the phosphate method are preferable from the viewpoint that the fat content on the surface of the aluminum substrate can be removed while the aluminum hardly dissolves.

  Moreover, a conventionally well-known degreasing agent can be used for a degreasing process. Specifically, for example, various commercially available degreasing agents can be used by a predetermined method.

<Mirror finish processing>
The mirror finishing process is performed in order to eliminate unevenness on the surface of the aluminum substrate, for example, rolling streaks generated during the rolling of the aluminum substrate, and improve the uniformity and reproducibility of the sealing process described later.
The mirror finishing process is not particularly limited, and a conventionally known method can be used. Examples thereof include mechanical polishing, chemical polishing, and electrolytic polishing.

  Examples of the mechanical polishing include a method of polishing with various commercially available polishing cloths, a method of combining various commercially available abrasives (for example, diamond, alumina) and a buff. Specifically, when an abrasive is used, a method in which the abrasive used is changed from coarse particles to fine particles over time is preferably exemplified. In this case, the final polishing agent is preferably # 1500. Thereby, the total reflectance in the visible light region (wavelength 300 to 700 nm) on the surface of the aluminum substrate can be 80% or more.

As chemical polishing, for example, “Aluminum Handbook”, 6th edition, edited by Japan Aluminum Association, 2001, p. Examples thereof include various methods described in 164 to 165.
Further, phosphoric acid - nitric acid method, Alupol I method, Alupol V method, Alcoa R5 _{method, H 3 PO 4 -CH 3 COOH} -Cu _{method, H 3 PO 4 -HNO 3 -CH} 3 COOH method are preferable. Among these, the phosphoric acid-nitric acid method, the H ₃ PO ₄ —CH ₃ COOH—Cu method, and the H ₃ PO ₄ —HNO ₃ —CH ₃ COOH method are preferable.
By chemical polishing, the total reflectance in the visible light region (wavelength 300 to 700 nm) on the surface of the aluminum substrate can be 80% or more.

As electrolytic polishing, for example, “Aluminum Handbook”, 6th edition, edited by Japan Aluminum Association, 2001, p. 164-165; various methods described in US Pat. No. 2,708,655; “Practical Surface Technology”, vol. 33, no. 3, 1986, p. The method described in 32-38;
By electropolishing, the total reflectance in the visible light region (wavelength 300 to 700 nm) on the surface of the aluminum substrate can be 80% or more.

  These methods can be used in appropriate combination. Specifically, for example, a method of performing mechanical polishing in which the abrasive is changed from coarse particles to fine particles with time, and then performing electrolytic polishing is preferable.

By mirror finishing, for example, a surface having an average surface roughness R _{a of} 0.1 μm or less and a total reflectance of 80% or more can be obtained. The average surface roughness _Ra is preferably 0.03 μm or less, and more preferably 0.02 μm or less. Further, the total reflectance is preferably 85% or more, and more preferably 90% or more.

<Roughening treatment>
As described above, the roughening treatment is performed for the purpose of forming a surface that scatters light according to the use of the LED material on which the insulating substrate of the present invention is mounted.
As the surface roughening treatment, for example, a method described in paragraphs [0053] to [0083] of Patent Document 5 (International Publication No. 2010/150810) can be used while appropriately adjusting the desired regular reflectance. Can be surfaced.
Even when the surface roughening treatment is performed, the total reflectance in the visible light region is preferably 80% or more, and more preferably 90% or more. Further, the regular reflectance is preferably 20% or less, and more preferably 10% or less.

[Insulation layer]
The insulating layer constituting the insulating substrate of the present invention is a layer provided on at least part of the surface of the aluminum substrate and is an anodized film of aluminum.
Here, the insulating layer may be an anodized film of an aluminum base different from the aluminum substrate, but will be described later on a part of the surface of the aluminum substrate from the viewpoint of preventing formation defects of the insulating layer. An anodized film is preferably formed on the aluminum substrate by anodizing.

In the present invention, the anodic oxide film has an insulating region A having a thickness (T _A ) of 20 nm to 80 μm and an insulating region B having a thickness (T _B ) of 2 to 1000 μm. The ratio (T _B / T _A ) between the film thickness of A and the film thickness of the insulating region B satisfies 2 to 2000.
Here, the insulating region A includes a semiconductor element and an LED light emitting element (hereinafter referred to as “package of the present invention”, respectively) in a semiconductor package and an LED package (hereinafter collectively referred to as “package of the present invention”). Collectively referred to as “semiconductor element etc.”), and the insulating region B is a wiring electrically connected to the semiconductor element or the like, that is, a metal wiring layer provided in the wiring board of the present invention to be described later. This is a region where

By using an insulating substrate having an insulating layer (anodized film) having such a configuration, both the insulating properties and heat dissipation properties of the package of the present invention are improved.
This is because the film thickness (T _A ) of the insulating region A is 80 μm or less, so that heat generated from a semiconductor element or the like can be easily conducted to the aluminum substrate, and the film thickness (T _B ) of the insulating region B. Since the withstand voltage is 2 μm or more, the withstand voltage is increased, and the ratio of the film thickness of the insulating region A to the film thickness of the insulating region B (T _B / T _A ) satisfies 2 to 2000. This is thought to be due to a better balance.

Further, in the present invention, the total reflectance is improved, and the luminous efficiency in the LED package of the present invention to be described later is improved, so that the area of the insulating region A includes at least the contact surface with the LED light emitting element. And it is preferable that it is an area 1.5 times or more of the area of the said contact surface, and it is more preferable that it is an area 2 times or more.
On the other hand, for the reason that the insulation of the package of the present invention becomes better, the area of the insulating region B includes at least the contact surface with the metal wiring layer and is 1.2 times or less of the area of the contact surface. The area is preferably only the contact surface.

  Furthermore, in the present invention, it is preferable that at least a part of the anodized film is embedded in the aluminum substrate because the heat dissipation of the package of the present invention is better.

In the present invention, the film thickness (T _A ) of the insulating region A is preferably 80 nm to 80 μm, and preferably 100 nm or more and less than 10 μm, because the heat dissipation of the package of the present invention becomes better. More preferred.
In addition, for the reason that the insulating property of the package of the present invention becomes better, the thickness (T _B ) of the insulating region B is preferably 20 to 300 μm, more preferably 20 to 200 μm, 30 More preferably, it is ˜100 μm.
Furthermore, from the viewpoint of the balance between insulation and heat dissipation of the package of the present invention, the ratio (T _B / T _A ) between the film thickness of the insulating region A and the film thickness of the insulating region B is 5 to 500. Is more preferable, it is more preferable that it is 10-200, and it is still more preferable that it is more than 20 and 100 or less.

Further, in the present invention, it is preferable that the total reflectance in the wavelength region of 300 to 700 nm in the insulating region A is 80% or more for the reason that the luminous efficiency in the LED package of the present invention to be described later is good. It is more preferably 85% or more, and still more preferably 90% or more.
Here, the total reflectance refers to a value measured with a spectrophotometer.

Furthermore, in the present invention, from the viewpoint of setting the total reflectance to 80% or more, the anodic oxide film forming the insulating region A is a porous film having micropores, and the following formula (i ) Is preferably 20% or more, more preferably 40% or more, and even more preferably 70% or more.
Ordering degree (%) = Y / X × 100 (i)
In the above formula (i), X represents the total number of micropores in the measurement range. Y is centered on the center of gravity of one micropore, and when the circle with the shortest radius inscribed in the edge of another micropore is drawn, the center of gravity of the micropore other than the one micropore is inside the circle. This represents the number in the measurement range of the one micropore to be included.

Here, the above formula (i) will be described more specifically with reference to FIG.
A micropore 101 shown in FIG. 2 (A) draws a circle 103 (inscribed in the micropore 102) having the shortest radius that is centered on the center of gravity of the micropore 101 and inscribed in the edge of another micropore. In this case, the center of gravity of the micropores other than the micropores 101 is included in the circle 3. Therefore, the micropore 101 is included in B.
The micropore 104 shown in FIG. 2 (B) draws a circle 106 (inscribed in the micropore 105) having the shortest radius centered on the center of gravity of the micropore 104 and inscribed in the edge of another micropore. In such a case, the center of gravity of the micropores other than the micropores 104 is included inside the circle 106. Therefore, the micropore 104 is not included in B.
Further, the micropore 107 shown in FIG. 2B is centered on the center of gravity of the micropore 107 and has the shortest radius 109 inscribed in the edge of another micropore (inscribed in the micropore 108). Is drawn, the circle 109 includes seven centroids of micropores other than the micropore 107. Therefore, the micropore 107 is not included in B.

  Similarly, in the present invention, the total reflectance is 80% or more, and the heat dissipation of the package of the present invention is further improved, so that the anodized film forming the insulating region A is a nonporous film. Preferably there is.

  Below, the manufacturing method of the insulated substrate of this invention mentioned above is demonstrated in detail.

[Production method 1 (see FIG. 3)]
As shown in FIG. 3, the insulating substrate 1 according to the present invention includes a first anodic slope treatment step in which a surface of an aluminum substrate 2 is subjected to a first anodic oxidation treatment to form an anodic oxidation coating 31, and the anodic oxidation coating 31. A mask layer forming step of forming a mask layer 4 having a predetermined opening pattern on the surface, and a second anodic slope processing step of forming a anodic oxide film 32 by subjecting the openings of the mask layer 4 to a second anodizing treatment; The mask layer removal step of removing the mask layer 4 can be produced by a manufacturing method in this order.
Here, among the anodized film 31 formed by the first anodizing treatment, the anodized film formed under the mask layer 4 constitutes the insulating region A in the insulating substrate of the present invention, and the other portions. The anodic oxide film (a part of the anodic oxide film 31 and the anodic oxide film 32) formed in (1) constitutes the insulating region B in the insulating substrate of the present invention.

[Production method 2 (see FIG. 4)]
As shown in FIG. 4, the insulating substrate 1 according to the present invention includes a first anodic slope treatment step in which a surface of an aluminum substrate 2 is subjected to a first anodic oxidation treatment to form an anodic oxidation coating 32, and the anodic oxidation coating 32. A mask layer forming step for forming a mask layer 4 having a predetermined opening pattern on the surface, a film removing step for removing a part of the anodized film 32 from the opening of the mask layer 4, and the mask layer 4 being removed. By a manufacturing method having in this order a mask layer removing step and a second anodizing treatment step in which a second anodizing treatment is performed on the substrate after removing the mask layer 4 to form an anodized film 31. Can be produced.
Here, of the anodized film 31 formed by the second anodizing process, the anodized film formed on the opening portion of the mask layer 4 (anodized film 32) forms the insulating region A in the insulating substrate of the present invention. The anodic oxide film (a part of the anodic oxide film 31 and the anodic oxide film 32) that is configured and formed in the other part constitutes the insulating region B in the insulating substrate of the present invention.

[Manufacturing method 3 (see FIG. 5)]
As shown in FIG. 5, the insulating substrate 1 according to the present invention includes a first anodic slope treatment step in which a surface of an aluminum substrate 2 is subjected to a first anodic oxidation treatment to form an anodic oxidation coating 32, and the anodic oxidation coating 32. A mask layer forming step for forming a mask layer 4 having a predetermined opening pattern on the surface, a film removing step for removing a part of the anodized film 32 from the opening of the mask layer 4, the mask layer 4 and the anode By the manufacturing method which has the 2nd anodic hill treatment process which performs the 2nd anodic oxidation process in the opening part of the oxide film 32, and forms the anodic oxide film 31, and the mask layer removal process which removes the said mask layer 4, in this order, Can be produced.
Here, the anodic oxide film 31 formed by the second anodic oxidation treatment constitutes the insulating region A in the insulating substrate of the present invention, and the anodic oxide film (anodized film 32) formed in the other part is This constitutes the insulating region B in the insulating substrate of the present invention.

[Production Method 4 (see FIG. 6)]
As shown in FIG. 6, the insulating substrate 1 of the present invention includes a dent forming step for forming a dent 5 in a part of the surface of an aluminum substrate 2, and a mask layer forming step for forming a mask layer 4 in the dent 5 portion. A first anodic hill treatment step of forming a anodic oxide film 32 by subjecting the substrate on which the mask layer 4 is formed to a first anodic oxidation coating, a mask layer removal step of removing the mask layer 4, and the mask layer 4 The substrate after removing the substrate can be manufactured by a manufacturing method having a second anodizing process for forming the anodized film 31 by performing a second anodizing process in this order.
Here, of the anodic oxide film 31 formed by the second anodic oxidation treatment, the anodic oxide film formed on the portion where the mask layer 4 was formed (the opening portion of the anodic oxide film 32) is the insulating film of the present invention. The insulating region A in the substrate is formed, and the anodized film (a part of the anodized film 31 and the anodized film 32) formed in the other part forms the insulating region B in the insulating substrate of the present invention. Become.

[Production Method 5 (see FIG. 7)]
As shown in FIG. 7, the insulating substrate 1 according to the present invention includes a first anodic slope treatment step in which the surface of the aluminum substrate 2 is subjected to a first anodic oxidation treatment to form an anodic oxidation coating 32, and the anodic oxidation coating 32. It can be manufactured by the manufacturing method which has the recessed part formation process which forms the recessed part 6 in a part of depth direction in this order.
Here, of the anodic oxide film 32 formed by the first anodic oxidation treatment, the anodic oxide film remaining in the concave portion 6 constitutes the insulating region A in the insulating substrate of the present invention, and the other portions are formed. The formed anodized film constitutes the insulating region B in the insulating substrate of the present invention.

[Production method 6 (see FIG. 8)]
As shown in FIG. 8, the insulating substrate 1 of the present invention has a first anodic hill treatment process in which a surface of an aluminum substrate 2 is subjected to a first anodizing treatment to form an anodized film 31, and other aluminum substrates. The anodized film 32 formed by performing anodizing treatment can be manufactured by a manufacturing method having a bonding step in which the anodized film 32 is partially bonded to the anodized film 31 so as to have a predetermined opening pattern in this order. .
Here, among the anodic oxide films 31 formed by the first anodic oxidation treatment, the anodic oxide films forming the openings where the anodic oxide films 32 are not bonded together form the insulating regions A in the insulating substrate of the present invention. The anodized film (anodized film 32) that is configured and formed in the other part constitutes the insulating region B in the insulating substrate of the present invention.

  Next, the anodizing process, the mask layer forming process, the mask layer removing process, the film removing process, the dent forming process, the recess forming process, and the bonding process described above will be specifically described.

<Anodizing process>
The anodizing process is a process for forming an anodized film by anodizing to form an insulating layer constituting the insulating substrate of the present invention.
Here, in FIGS. 3 to 8, the first anodizing treatment and the second anodizing treatment are performed to form the anodized film 31 or the anodized film 32, which is the insulating substrate of the present invention. This is because the insulating region A and the insulating region B in FIG.
Although not shown in FIGS. 3 to 8, when forming the anodic oxide film 32, aluminum is used by using a mask layer corresponding to the wiring pattern of the metal wiring layer in the wiring board of the present invention described later. The substrate may be partially anodized.

In the present invention, the anodizing treatment in the anodizing treatment step can be performed by a conventionally known method performed in the production of a lithographic printing plate support.
Specifically, as a solution used for anodizing treatment, sulfuric acid, phosphoric acid, chromic acid, oxalic acid, sulfamic acid, benzenesulfonic acid, amidosulfonic acid, malonic acid, citric acid, tartaric acid, boric acid, etc. Alkali metal / alkaline earth metal hydroxides such as sodium hydroxide, magnesium hydroxide, potassium hydroxide and calcium hydroxide can be used alone or in combination of two or more.
At this time, at least a component usually contained in an aluminum substrate, an electrode, tap water, ground water, or the like may be contained in the electrolytic solution. Furthermore, the 2nd, 3rd component may be added. Examples of the second and third components herein include metal ions such as Na, K, Mg, Li, Ca, Ti, Al, V, Cr, Mn, Fe, Co, Ni, Cu, and Zn; Cation such as ammonium ion; anion such as nitrate ion, carbonate ion, chloride ion, phosphate ion, fluoride ion, sulfite ion, titanate ion, silicate ion, borate ion, etc., 0 to 10,000 ppm It may be contained at a concentration of about.

In the present invention, the conditions of the anodizing treatment in the anodizing treatment step vary depending on the electrolyte used, and thus cannot be determined unconditionally, but generally the electrolyte concentration is 1 to 80% by mass. The liquid temperature is 5 to 70 ° C., the current density is 0.5 to 60 A / dm ² , the voltage is 1 to 600 V, and the electrolysis time is 15 seconds to 20 hours. Is done.

  Further, in the present invention, the anodizing treatment in the anodizing step is carried out by using Japanese Patent Laid-Open Nos. 54-81133, 57-47894, 57-51289, 57-51290, JP-A-57-54300, JP-A-57-136596, JP-A-58-107498, JP-A-60-200366, JP-A-62-136596, JP-A-63-176494, JP-A 4-176768, JP-A-4-280997, JP-A-6-207299, JP-A-5-24377, JP-A-5-32083, JP-A-5-125597, JP-A-5-195291, etc. Can also be used.

  Of these, as described in JP-A-54-12853 and JP-A-48-45303, it is preferable to use a sulfuric acid solution as the electrolytic solution. The sulfuric acid concentration in the electrolytic solution is preferably 10 to 300 g / L, and the aluminum ion concentration is preferably 1 to 25 g / L, and more preferably 2 to 10 g / L. Such an electrolytic solution can be prepared, for example, by adding aluminum sulfate or the like to dilute sulfuric acid having a sulfuric acid concentration of 50 to 200 g / L.

In the present invention, in the anodizing step, when anodizing is performed in an electrolyte containing sulfuric acid, a direct current may be applied between the aluminum substrate and the counter electrode, or an alternating current is applied. May be.
When a direct current is applied to the above aluminum substrate, the current density is preferably from 1 to 60 A / dm ^2, and more preferably 5 to 40 A / dm ^2.

Further, in the present invention, when the anodizing treatment in the anodizing treatment step is continuously performed, the anodizing treatment is performed so that current is concentrated on a part of the aluminum substrate and so-called “burning” does not occur. It is preferable that current is supplied at a low current density of 5 to 10 A / dm ^{2 at} the beginning of the process, and the current density is increased to 30 to 50 A / dm ² or more as the anodizing process proceeds. When the anodizing treatment is continuously performed, it is preferable that the anodizing process is performed by a liquid power feeding method in which power is supplied to the aluminum substrate through an electrolytic solution.

Further, in the present invention, as an electrolytic device used for anodizing treatment in the anodizing treatment step, JP-A-48-26638, JP-A-47-18739, JP-B-58-24517, etc. Can be used. Among these, the apparatus shown in FIG. 9 is preferably used.
FIG. 9 is a schematic view showing an example of an apparatus for anodizing the surface of an aluminum substrate. In the anodizing apparatus 410, the aluminum substrate 416 is transported as indicated by arrows in FIG. The aluminum substrate 416 is charged (+) by the power supply electrode 420 in the power supply tank 412 in which the electrolytic solution 418 is stored. Then, the aluminum substrate 416 is conveyed upward by the roller 422 in the power supply tank 412, changed in direction downward by the nip roller 424, and then conveyed toward the electrolytic treatment tank 414 in which the electrolytic solution 426 is stored. The direction is changed horizontally. Next, the aluminum substrate 416 is charged to (−) by the electrolytic electrode 430 to form an anodized film on the surface thereof, and the aluminum substrate 416 exiting the electrolytic treatment tank 414 is transported to a subsequent process. In the anodizing apparatus 410, the roller 422, the nip roller 424 and the roller 428 constitute a direction changing means, and the aluminum substrate 416 is disposed between the power supply tank 412 and the electrolytic treatment tank 414 between the rollers 422, 424 and By 428, it is conveyed into a mountain shape and an inverted U shape. The feeding electrode 420 and the electrolytic electrode 430 are connected to a DC power source 434.

  9 is characterized in that the feeding tank 412 and the electrolytic treatment tank 414 are partitioned by a single tank wall 432, and the aluminum substrate 416 is conveyed in a mountain shape and an inverted U shape between the tanks. It is to have done. As a result, the length of the aluminum substrate 416 in the inter-tank portion can be minimized. Therefore, the overall length of the anodizing apparatus 410 can be shortened, so that the equipment cost can be reduced. Further, by transporting the aluminum substrate 416 in a mountain shape and an inverted U shape, it is not necessary to form an opening for allowing the aluminum substrate 416 to pass through the tank wall 432 of each tank 412 and 414. Therefore, since the liquid feeding amount required to maintain the liquid level height in each tank 412 and 414 at a required level can be suppressed, the operating cost can be reduced.

  In the present invention, the anodizing treatment in the anodizing treatment step may be performed alone under a certain treatment condition, but the shape of the anodized film depending on the location or the shape in the depth direction, etc. When it is desired to control the shape, two or more anodizing treatments with different conditions may be combined in order.

Further, in the present invention, the anodizing treatment in the anodizing treatment step is performed in order to improve the total reflectance of the LED package of the present invention to be described later. When a porous film having micropores is used as the anodized film 31 in FIGS. 6 and 8 and the anodized film 32 in FIG. 7, for example, Japanese Patent No. 3,714,507, Japanese Patent Application Laid-Open No. 2002-285382, An array in a honeycomb shape by a method described in Japanese Unexamined Patent Application Publication No. 2006-1224827, Japanese Unexamined Patent Application Publication No. 2007-231339, Japanese Unexamined Patent Application Publication No. 2007-231405, Japanese Unexamined Patent Application Publication No. 2007-231340, Japanese Unexamined Patent Application Publication No. 2007-238988, Anodizing treatment for forming the micropores is preferable.
These processes are preferably the processes described in the processing conditions of each patent and publication.

Furthermore, in the present invention, the anodizing treatment in the anodizing treatment step improves the total reflectance of the LED package of the present invention, which will be described later, and improves the heat dissipation of the package of the present invention. When a nonporous film is used as the anodic oxide film forming A, that is, the anodic oxide film 31 in FIGS. 3 to 6 and 8 and the anodic oxide film 32 in FIG. 7, sulfuric acid, phosphoric acid, chromic acid, oxalic acid , Sulfamic acid, benzenesulfonic acid, amidosulfonic acid, malonic acid, citric acid, tartaric acid, boric acid, etc .; alkali metal / alkaline earth metal water such as sodium hydroxide, magnesium hydroxide, potassium hydroxide, calcium hydroxide An anodizing treatment in which an oxide or the like is used as an aqueous solution (electrolytic solution) using one kind alone or two or more kinds in combination is preferable.
Here, in the aqueous solution, for example, components usually contained in an aluminum substrate, an electrode, tap water, groundwater, and the like may be contained in the electrolytic solution.
In the aqueous solution, for example, ions of metals such as Na, K, Mg, Li, Ca, Ti, Al, V, Cr, Mn, Fe, Co, Ni, Cu, and Zn; Ions; anions such as nitrate ions, carbonate ions, chloride ions, phosphate ions, fluoride ions, sulfite ions, titanate ions, silicate ions, borate ions; second and third components such as 0 to It may be contained at a concentration of about 10,000 ppm.
Furthermore, the conditions for the anodizing treatment vary depending on the electrolyte used, and thus cannot be determined unconditionally. In general, however, the electrolyte concentration is 1 to 80% by mass, the solution temperature is 5 to 70 ° C., and the current density. 0.5 to 60 A / dm ² , a voltage of 1 to 600 V, and an electrolysis time of 15 seconds to 20 hours are appropriate and are adjusted so as to obtain a desired anodic oxide film amount.

<Mask layer forming step>
In the embodiment shown in FIGS. 3 to 5, the mask layer forming step is a step of forming a mask layer having a predetermined opening pattern (opening) on the surface of the anodized film formed in the first anodizing treatment step. Yes, the embodiment shown in FIG. 6 is a step of forming a mask layer in the depression formed in the aluminum substrate.

In the embodiment shown in FIGS. 3 to 5, for example, after the image recording layer is formed on the surface of the anodic oxide film, the mask layer is given a predetermined energy by applying energy to the image recording layer by exposure or heating. In the embodiment shown in FIG. 6, after the image recording layer is formed in the recessed portion formed in the aluminum substrate, the entire surface of the image recording layer is exposed. Alternatively, it can be formed by a method of applying energy by heating and curing.
Here, the material for forming the image recording layer is not particularly limited, and a conventionally known material for forming a photosensitive layer (photoresist layer) or a heat-sensitive layer can be used. If necessary, an infrared absorber or the like can be used. An additive may also be contained.

<Mask layer removal process>
The mask layer removing step is a step of removing the mask layer.
Here, the method of removing the mask layer is not particularly limited, and examples thereof include a method of dissolving the mask layer and dissolving and removing it using a solution in which the aluminum substrate and the anodized film are not dissolved. .

<Film removal process>
The film removal step is a step of removing the anodic oxide film existing under the opening of the mask layer as shown in FIGS.
Here, the method of removing the anodic oxide film is not particularly limited, and examples thereof include a method of dissolving the anodic oxide film using an alkaline etching aqueous solution or an acidic aqueous solution.

<Dimple formation process>
The said hollow formation process is a process of forming a hollow in a part of surface of the said aluminum substrate, as shown in FIG.
Here, the method of forming the depression is not particularly limited, and examples thereof include a method of forming a depression by pressing a mold on the aluminum substrate.

<Recess formation process>
The said recessed part formation process is a process of forming a recessed part in a part of depth direction of the said anodized film as shown in FIG.
Here, the method of forming the recess is not particularly limited, and examples thereof include a method of mechanically scraping the anodized film using a dicer or the like.

<Bonding process>
As shown in FIG. 8, the pasting step is partially performed so that the anodized film formed by anodizing another aluminum substrate has a predetermined opening pattern in the previously formed anodized film. It is the process of pasting together.
Here, the method of bonding is not particularly limited, and examples thereof include a method of bonding by heat fusion or an adhesive.

<Sealing treatment>
In the method for producing an insulating substrate of the present invention, when the anodic oxide film (insulating layer) is porous, a sealing treatment is performed to seal micropores present in the film from the viewpoint of heat dissipation of the package of the present invention. May be.
The sealing treatment can be performed according to a known method such as boiling water treatment, hot water treatment, steam treatment, sodium silicate treatment, nitrite treatment, ammonium acetate treatment and the like. For example, even if the sealing treatment is carried out by the apparatus and method described in JP-B-56-12518, JP-A-4-4194, JP-A-5-20296, JP-A-5-179482, etc. Good.

<Washing treatment>
Moreover, in the manufacturing method of the insulated substrate of this invention, it is preferable to wash with water after completion | finish of the process of each process mentioned above. For washing, pure water, well water, tap water, or the like can be used. A nip device may be used to prevent the processing liquid from being brought into the next process.

<Other processing>
Furthermore, in the method for manufacturing an insulating substrate of the present invention, various treatments can be applied to the surface of the insulating substrate as necessary.
For example, in order to improve the whiteness (scattering property) of the LED package of the present invention, an inorganic insulating layer made of a white insulating material such as titanium oxide or an organic insulating layer such as a white resist may be provided.
In addition to the white color described above, a desired color can be colored on the insulating layer made of aluminum oxide, for example, by electrodeposition. Specifically, “Anodizing” Metal Surface Technology Association. Colored ionic species such as those described in Metal Surface Technology Course B (1969 PP. 195-207), “New Anodized Theory”, Karos Publishing (1997 PP. 95-96), specifically Co Ion, Fe ion, Au ion, Pb ion, Ag ion, Se ion, Sn ion, Ni ion, Cu ion, Bi ion, Mo ion, Sb ion, Cd ion, As ion, etc. are mixed in the electrolytic solution and electrolysis is performed. By processing, it can color.

Similarly, in order to further improve the insulation and reflectivity of the insulating layer made of aluminum oxide, for example, a sol-gel method as described in paragraphs [0016] to [0035] of JP-A-6-35174 A layer can also be provided.
Here, the sol-gel method is a method in which a sol generally made of a metal alkoxide is made into a gel that loses fluidity by hydrolysis and polycondensation reaction, and this gel is heated to form an oxide layer (ceramic layer). .
Further, the metal alkoxide is not particularly limited, but Al (O—R) n, Ba (O—R) n, B (O—R) n, Bi (O—R) n, Ca (O—R) n, Fe (O—R) n, Ga (O—R) n, Ge (O—R) n, Hf (O—R) n, In ( O—R) n, K (O—R) n, La (O—R) n, Li (O—R) n, Mg (O—R) n, Mo (O—R) n, Na (O— R) n, Nb (O—R) n, Pb (O—R) n, Po (O—R) n, Po (O—R) n, P (O—R) n, Sb (O—R) n, Si (O—R) n, Sn (O—R) n, Sr (O—R) n, Ta (O—R) n, Ti (O—R) n, V (O—R) n, W (O—R) n, Y (O—R) n, Zn (O—R) n, Zr (O—R) n and the like are included (R in the text may have a substituent). A chain, a branched, and a cyclic hydrocarbon group, n represents an arbitrary natural number).
Among these, a Si (O—R) n system that is excellent in reactivity with the insulating layer and excellent in sol-gel layer formability is more preferable.

In the present invention, the method for forming the sol-gel layer is not particularly limited, but from the viewpoint of controlling the thickness of the layer, a method in which a sol solution is applied and heated is preferred.
Moreover, as a density | concentration of sol liquid, 0.1-90 mass% is preferable, 1-80 mass% is more preferable, 5-70 mass% is especially preferable.
In the present invention, when the sol-gel layer is formed, the thickness is preferably 0.01 μm to 20 μm, more preferably 0.05 μm to 15 μm, and more preferably 0.1 μm to 0.1 μm from the viewpoint of high reflectivity and insulation. 10 μm is particularly preferable. If it is thicker than this range, it is not preferable from the viewpoint of high reflectance, and if it is thinner than this range, it is not preferable from the viewpoint of insulation. In addition, in order to make a layer thick, you may apply | coat repeatedly.

[Wiring board]
Below, the wiring board of this invention is demonstrated in detail.
The wiring board of the present invention is a wiring board having the above-described insulating substrate of the present invention and a metal wiring layer provided on an anodized film that forms the insulating region B of the insulating substrate.
Next, the configuration of the wiring board of the present invention will be described with reference to FIG.

  As shown in FIG. 10, the wiring board 20 of the present invention includes the insulating substrate 1 of the present invention and a metal wiring layer 7 provided on the top of the anodized film that forms the insulating region 3B of the insulating substrate 1. is there.

In the present invention, the material of the metal wiring layer is not particularly limited as long as it is a material that conducts electricity. Specific examples thereof include gold (Au), silver (Ag), copper (Cu), and aluminum (Al). , Magnesium (Mg), nickel (Ni), and the like. These may be used alone or in combination of two or more.
Of these, Cu is preferably used because of its low electrical resistance. Note that an Au layer or a Ni / Au layer may be provided on the surface layer of the wiring layer made of Cu from the viewpoint of improving the ease of wire bonding.

  In the present invention, the thickness of the metal wiring layer is preferably 0.5 to 1000 μm, more preferably 1 to 500 μm, and particularly preferably 5 to 250 μm from the viewpoint of conduction reliability and package compactness.

[Manufacturing method of wiring board]
Below, the manufacturing method of the wiring board of this invention is demonstrated in detail.
As shown in FIG. 11, for example, the wiring board of the present invention includes a mask layer forming step of forming a mask layer 4 on the surface of an anodized film 31 that forms an insulating region A in the insulating substrate of the present invention, A metal wiring layer forming step for forming the metal wiring layer 7 on the surface of the anodic oxide film 32 forming the insulating region B in the insulating substrate, and a mask layer removing step for removing the mask layer to obtain the wiring substrate in this order. It can be manufactured by a manufacturing method.

  Next, the metal wiring layer forming process will be specifically described. The mask layer forming step and the mask layer removing step can be performed in the same manner as described in the above-described method for manufacturing an insulating substrate of the present invention.

<Metal wiring layer formation process>
The metal wiring layer forming step is a step of forming a metal wiring layer on the surface of the anodized film forming the insulating region B in the insulating substrate of the present invention.
Here, the method of forming the metal wiring layer on the surface of the anodic oxide film includes, for example, various plating treatments such as electrolytic plating treatment, electroless plating treatment, displacement plating treatment; sputtering treatment; vapor deposition treatment; Can be mentioned.
Among these, from the viewpoint of high heat resistance, the metal-only layer formation is preferable, and from the viewpoint of thick film / uniform formation and high adhesion, layer formation by plating is particularly preferable.

In the present invention, since the plating process is a plating process for a non-conductive substance (insulating substrate), a reduced metal layer called a seed layer is provided, and then a thick metal layer is formed using the metal layer. It is preferable to use a technique.
For the formation of the seed layer, electroless plating is preferably used. As a plating solution, a main component (for example, a metal salt, a reducing agent, etc.) and an auxiliary component (for example, a pH adjusting agent, a buffering agent, a complex, etc.) are used. It is preferable to use a solution composed of an agent, accelerator, stabilizer, improver, etc. In addition, as a plating solution, SE-650 * 666 * 680, SEK-670 * 797, SFK-63 (all manufactured by Nippon Kanisen Co., Ltd.), Melplate NI-4128, Enplate NI-433, Enplate NI-411 Commercial products such as those manufactured by Meltex can be used as appropriate.
Further, when copper is used as the material of the metal wiring layer, various electrolytic solutions containing sulfuric acid, copper sulfate, hydrochloric acid, polyethylene glycol and a surfactant as main components and other various additives can be used.

The metal wiring layer thus formed is patterned by a known method in accordance with the mounting design of the semiconductor element or the like. Further, a metal layer (including solder) is again provided at a place where a semiconductor element or the like is actually mounted, and can be appropriately processed for easy connection by thermocompression bonding, flip chip, wire bonding, or the like.
As a suitable metal layer, a metal material such as solder or gold (Au), silver (Ag), copper (Cu), aluminum (Al), magnesium (Mg), nickel (Ni) is preferable. From the viewpoint of mounting of elements and the like, a method of providing Au or Ag via solder or Ni is preferable from the viewpoint of connection reliability.

Specifically, as a method of forming gold (Au) via nickel (Ni) on a copper (Cu) wiring on which a pattern is formed, Ni strike plating is performed, and then Au plating is performed. Can be mentioned.
Here, the Ni strike plating is performed for the purpose of removing the surface oxide layer of the Cu wiring layer and ensuring adhesion of the Au layer.
For Ni strike plating, a general Ni / hydrochloric acid mixed solution may be used, or a commercially available product such as NIPS-100 (manufactured by Hitachi Chemical Co., Ltd.) may be used.
On the other hand, Au plating is performed for the purpose of improving wire bonding and solder wettability after performing Ni strike plating.
The Au plating is preferably generated by electroless plating, such as HGS-5400 (manufactured by Hitachi Chemical Co., Ltd.), microfab Au series, galvanomister GB series, precious hub IG series (all manufactured by Tanaka Kikinzoku). A commercially available processing solution can be used.

[Semiconductor package]
Hereinafter, the semiconductor package of the present invention will be described in detail.
The semiconductor package of the present invention is a semiconductor package having the above-described wiring board of the present invention and a semiconductor element provided on an anodic oxide film that forms the insulating region A of the insulating substrate.
Next, the structure of the semiconductor package of the present invention will be described with reference to FIG.

  As shown in FIG. 12, the semiconductor package 30 of the present invention has the wiring substrate 20 of the present invention and the semiconductor element 8 provided on the anodized film forming the insulating region 3A of the insulating substrate 1 of the present invention. The semiconductor element 8 and the metal wiring layer 7 also serving as an electrode for external connection are connected (wire bonding) by a wire 9.

  In the present invention, the semiconductor element is not particularly limited as long as it is a power semiconductor element other than the LED light emitting element used in the LED package of the present invention to be described later, and a specific example thereof is generally used for a power module. Transistor, CPU, insulated gate bipolar transistor (IGBT), and the like.

[LED package]
Below, the LED package of this invention is demonstrated in detail.
The LED package of the present invention is an LED package having the above-described wiring board of the present invention and an LED light emitting element provided on an anodized film that forms the insulating region A of the insulating substrate.
Next, the configuration of the LED package of the present invention will be described with reference to FIG.

As shown in FIG. 13, the LED package 40 of the present invention includes the wiring substrate 20 of the present invention and the LED light emitting element 8 provided on the top of the anodized film that forms the insulating region 3A of the insulating substrate 1 of the present invention. It is what you have.
Here, in the LED package 40 shown in FIG. 13, the LED light-emitting element 8 is molded with a transparent resin 10 mixed with YAG-based fluorescent particles 11, and the light excited by the YAG-based fluorescent particles 11 and the LED light-emitting element. The white light is emitted by the afterglow 8, and the LED light emitting element 8 is connected (wire bonded) to the metal wiring layer 7 also serving as an electrode for external connection by a wire 9.

Although not shown in FIG. 13, for example, when an LED package is manufactured using an insulating substrate having the mode shown in FIG. 1D, a bank for holding the transparent resin around the transparent resin. An insulating layer called an agent is formed in a circular shape.
Therefore, in the LED package of the present invention, it is preferable to use the insulating substrate having the mode shown in FIG. 13, that is, the mode shown in FIG.

In the present invention, the LED light-emitting element is obtained by forming a semiconductor such as GaAlN, ZnS, ZnSe, SiC, GaP, GaAlAs, AlN, InN, AlInGaP, InGaN, GaN, and AlInGaN on the substrate as the light emitting layer. It is done.
Examples of the semiconductor structure include a homostructure, a heterostructure, or a double heterostructure having a MIS junction, a PIN junction, or a PN junction. Various emission wavelengths can be selected from ultraviolet light to infrared light depending on the material of the semiconductor layer and the degree of mixed crystal.

The material of the transparent resin is preferably a thermosetting resin.
The thermosetting resin is preferably formed of at least one selected from the group consisting of epoxy resins, modified epoxy resins, silicone resins, modified silicone resins, acrylate resins, urethane resins, and polyimide resins. , Modified epoxy resin, silicone resin, and modified silicone resin are preferable.
Further, the transparent resin is preferably hard to protect the blue LED.
Moreover, it is preferable to use resin excellent in heat resistance, a weather resistance, and light resistance for transparent resin.
The transparent resin may be mixed with at least one selected from the group consisting of a filler, a diffusing agent, a pigment, a fluorescent material, a reflective material, an ultraviolet absorber, and an antioxidant so as to have a predetermined function. it can.

Furthermore, the said fluorescent particle should just absorb the light from blue LED and wavelength-convert it into the light of a different wavelength.
Specific examples of the fluorescent particles include nitride-based phosphors, oxynitride-based phosphors, sialon-based phosphors, and β-sialon-based phosphors that are mainly activated by lanthanoid elements such as Eu and Ce. An alkaline earth halogen apatite phosphor, an alkaline earth metal borate phosphor, an alkaline earth metal aluminate phosphor mainly activated by a lanthanoid group such as Eu, or a transition metal group element such as Mn; Alkaline earth silicate phosphor, alkaline earth sulfide phosphor, alkaline earth thiogallate phosphor, alkaline earth silicon nitride phosphor, germanate phosphor; mainly activated by lanthanoid elements such as Ce Rare earth aluminate phosphors, rare earth silicate phosphors, organic complexes mainly activated by lanthanoid elements such as Eu, etc., and these may be used alone, It may be used in combination with more species.

On the other hand, the LED package of the present invention can also be used as a phosphor mixed color white LED package using an ultraviolet to blue LED and a fluorescent light emitter that absorbs the LED and emits fluorescence in the visible light region.
These fluorescent light emitters absorb blue light from the blue LED to generate fluorescence (yellowish fluorescent light), and white light is emitted from the light emitting element by the fluorescent light and the afterglow of the blue LED.
The above-described method is a so-called “pseudo white light emission type” in which a blue LED light source chip and one kind of yellow phosphor are combined. In addition, for example, an ultraviolet to near-ultraviolet LED light source chip and red / green / blue fluorescence. LED of the present invention as a light-emitting unit using a known light-emitting method such as “ultraviolet to near-ultraviolet light source type” in which several types of bodies are combined, and “RGB light source type” that emits white light with three red / green / blue light sources Package can be used.

In the package of the present invention, the method of mounting a semiconductor element or the like on the wiring board of the present invention involves mounting by heating, but the thermocompression bonding including solder reflow and the mounting method by flip chip provide uniform and reliable mounting. From the viewpoint of application, the maximum reached temperature is preferably 220 to 350 ° C, more preferably 240 to 320 ° C, and particularly preferably 260 to 300 ° C.
The time for maintaining these maximum temperatures is preferably from 2 seconds to 10 minutes, more preferably from 5 seconds to 5 minutes, and particularly preferably from 10 seconds to 3 minutes.
In addition, from the viewpoint of suppressing cracks generated in the anodized film due to the difference in thermal expansion coefficient between the aluminum substrate and the anodized film, the desired constant temperature is reached for 5 seconds before reaching the maximum temperature. A method of performing a heat treatment for 10 minutes, more preferably 10 seconds to 5 minutes, particularly preferably 20 seconds to 3 minutes can also be employed. The desired constant temperature is preferably 80 to 200 ° C, more preferably 100 to 180 ° C, and particularly preferably 120 to 160 ° C.

  Moreover, as temperature at the time of mounting by wire bonding, from a viewpoint of performing reliable mounting, 80-300 degreeC is preferable, 90-250 degreeC is more preferable, and 100-200 degreeC is especially preferable. The heating time is preferably 2 seconds to 10 minutes, more preferably 5 seconds to 5 minutes, and particularly preferably 10 seconds to 3 minutes.

The present invention will be specifically described below with reference to examples. However, the present invention is not limited to these.
[Production of insulating substrate]
Example 1
<Preparation of aluminum substrate>
Si: 0.06 mass%, Fe: 0.30 mass%, Cu: 0.005 mass%, Mn: 0.001 mass%, Mg: 0.001 mass%, Zn: 0.001 mass%, Ti: Containing 0.03% by mass, the balance is prepared using Al and an inevitable impurity aluminum alloy, and after performing the molten metal treatment and filtration, an ingot having a thickness of 500 mm and a width of 1200 mm is obtained by a DC casting method. Produced.
Next, the surface was shaved with a chamfering machine with an average thickness of 10 mm, soaked at 550 ° C. for about 5 hours, and when the temperature dropped to 400 ° C., the thickness was 2.7 mm using a hot rolling mill. A rolled plate was used.
Furthermore, after performing heat processing at 500 degreeC using a continuous annealing machine, it finished by cold rolling to thickness 1.0mm, and obtained the aluminum substrate of JIS1050 material.
The aluminum substrate was made to have a width of 1030 mm, and then subjected to the following electrolytic polishing treatment.

<Electropolishing treatment>
The aluminum substrate was subjected to an electropolishing treatment using an electropolishing liquid having the following composition under the conditions of a voltage of 25 V, a liquid temperature of 65 ° C., and a liquid flow rate of 3.0 m / min.
The cathode was a carbon electrode, and GP0110-30R (manufactured by Takasago Seisakusho) was used as the power source. The flow rate of the electrolytic solution was measured using a vortex flow monitor FLM22-10PCW (manufactured by AS ONE).
(Electrolytic polishing liquid composition)
-660 mL of 85% by mass phosphoric acid (reagent manufactured by Wako Pure Chemical Industries, Ltd.)
・ Pure water 160mL
・ Sulfuric acid 150mL
・ Ethylene glycol 30mL

<First anodizing treatment (reference drawing: FIG. 3 (A) → (B))>
The thickness of the anodic oxide film to be formed on an aluminum substrate subjected to electropolishing treatment with an electrolyte solution of 0.30 mol / L sulfuric acid under conditions of a voltage of 25 V, a liquid temperature of 15 ° C., and a liquid flow rate of 3.0 m / min. Was set to a treatment time of 20 nm, and anodization was performed to produce a substrate on which an anodized film X having a thickness of 20 nm was formed on the surface of the aluminum substrate.

<Formation of mask layer (reference drawing: FIG. 3 (B) → (C))>
Photoresist (FC-230G, manufactured by Toyobo Co., Ltd.) was coated on the surface of the anodized film X of the substrate subjected to the first anodizing treatment, and UV irradiation was performed through a mask to give a predetermined opening pattern. .
Thereafter, the non-irradiated portion was completely removed by developing with an alkaline developer, and the surface of the anodized film X was exposed in a pattern.
The exposed portion of the anodic oxide film X is a portion constituting the insulating region B of the finally produced insulating substrate, and the non-exposed portion of the anodic oxide film X is insulated from the finally produced insulating substrate. This is a part constituting area A.

<Second anodizing treatment (reference drawing: FIG. 3 (C) → (D))>
The entire anodic oxide film formed on the substrate on which the mask layer is formed under conditions of an electrolyte of 0.30 mol / L sulfuric acid, a voltage of 25 V, a liquid temperature of 15 ° C., and a liquid flow rate of 3.0 m / min ( The anodizing treatment was performed by setting the treatment time so that the thickness of the anodized film X and the anodized film Y was 40 μm, and an anode was further formed below the anodized film X in the exposed portion of the pattern. A substrate on which the oxide film Y was formed was produced.
The anodized film Y was formed in a form embedded in an aluminum substrate.

<Removal of mask layer (reference drawing: FIG. 3D-> E))
With respect to the substrate after the second anodizing treatment, the mask layer was removed using a monomethanolamine solvent to produce an insulating substrate.

(Example 2)
An insulating substrate was produced in the same manner as in Example 1 except that the treatment time was changed so that the thickness of the anodized film X formed in the first anodizing treatment was 500 nm.

(Example 3)
An insulating substrate was produced in the same manner as in Example 1 except that the first anodizing treatment was performed under the following conditions.
<First anodizing treatment>
The aluminum substrate after the electropolishing treatment was anodized with an electrolyte solution of 0.30 mol / L sulfuric acid for 1 hour under the conditions of a voltage of 25 V, a liquid temperature of 15 ° C., and a liquid flow rate of 3.0 m / min. Further, the anodized sample was immersed in a mixed solution of 0.5 mol / L phosphoric acid for 20 minutes at 40 ° C. for film removal.
Next, after repeating the same treatment 4 times in this order, it is continuously applied with an electrolytic solution of 0.30 mol / L sulfuric acid under the conditions of a voltage of 25 V, a liquid temperature of 15 ° C., and a liquid flow rate of 3.0 m / min. A re-anodization treatment was performed by setting the treatment time so that the final thickness of the anodic oxide film after the film removal treatment was 1.6 μm (1600 nm), and a mixed aqueous solution of 0.5 mol / L phosphoric acid. The film is immersed for 15 minutes at 40 ° C. to remove the film, thereby anodizing with a thickness of 1.6 μm (1600 nm) in which micropores are arranged in a straight tubular and honeycomb shape on the surface of the aluminum substrate. Film X was formed.

Example 4
The treatment time is changed so that the thickness of the anodic oxide film X formed in the first anodic oxidation treatment is 2 μm (2000 nm), and the entire anodic oxide film formed in the second anodic oxidation treatment (anodic oxidation) An insulating substrate was produced in the same manner as in Example 3 except that the treatment time was changed so that the thickness of the film X and the anodized film Y was 800 μm.

(Example 5)
The treatment time is changed so that the thickness of the anodic oxide film X formed in the first anodic oxidation process is 9 μm (9000 nm), and the entire anodic oxide film formed in the second anodic oxidation process (anodic oxidation) An insulating substrate was produced in the same manner as in Example 1 except that the treatment time was changed so that the thickness of the film X and the anodized film Y was 20 μm.

(Example 6)
In the first anodic oxidation treatment, the treatment time was changed so that the thickness of the formed anodic oxide film X was 500 nm, and mixing of boric acid with a concentration of 30 g / L and sodium tetraborate with a concentration of 20 g / L An insulating substrate was produced in the same manner as in Example 2 except that a nonporous anodized film X having a thickness of 500 nm was formed by anodizing with an aqueous solution at a temperature of 20 ° C.

(Example 7)
The treatment time is changed so that the thickness of the anodic oxide film X formed in the first anodic oxidation process is 10 μm (10000 nm), and the entire anodic oxide film formed in the second anodic oxidation process (anodic oxidation) An insulating substrate was produced in the same manner as in Example 1 except that the treatment time was changed so that the thickness of the film X and the anodized film Y was 50 μm.

(Example 8)
The treatment time is changed so that the thickness of the anodic oxide film X formed in the first anodic oxidation process is 10 μm (10000 nm), and the entire anodic oxide film formed in the second anodic oxidation process (anodic oxidation) An insulating substrate was produced in the same manner as in Example 1 except that the treatment time was changed so that the thickness of the film X and the anodized film Y was 200 μm.

Example 9
<First anodizing treatment (reference diagram: FIG. 4 (A) → (B))>
With respect to the aluminum substrate subjected to the electropolishing treatment in the same manner as in Example 1, with an electrolyte of 0.30 mol / L sulfuric acid, under conditions of a voltage of 25 V, a liquid temperature of 15 ° C., and a liquid flow rate of 3.0 m / min, A treatment time was set so that the thickness of the anodic oxide film Y was 800 μm, and an anodic oxidation process was performed to produce a substrate on which an anodic oxide film Y having a thickness of 800 μm was formed on the surface of the aluminum substrate.

<Formation of mask layer (reference drawing: FIG. 4 (B) → (C))>
A photoresist (FC-230G, manufactured by Toyobo Co., Ltd.) was coated on the surface of the substrate subjected to the first anodizing treatment, and UV irradiation was performed through a mask so as to give a predetermined opening pattern. Thereafter, the non-irradiated portion was completely removed by developing with an alkaline developer, and the surface of the anodized film Y was exposed in a pattern.
The unexposed portion of the anodic oxide film Y is a portion constituting the insulating region B of the insulating substrate to be finally produced.

<Removal of anodized film Y and mask layer (reference diagram: FIG. 4 (C) → (D) → (E))>
After removing the exposed portion of the anodic oxide film Y using an aqueous potassium hydroxide solution adjusted to pH 13, all the remaining mask layer is removed using a monomethanolamine solvent, and the anodized film Y is patterned on the surface of the aluminum substrate. Formed into a shape.

<Second anodizing treatment (reference diagram: FIG. 4 (E) → (F))>
With respect to the aluminum substrate after removing the mask layer, the thickness of the anodic oxide film is 0.30 mol / L sulfuric acid electrolytic solution under the conditions of a voltage of 25 V, a liquid temperature of 15 ° C., and a liquid flow rate of 3.0 m / min. Anodization is performed by setting the treatment time so as to be 2 μm, and an anodized film having a thickness of 2 μm (2000 nm) is formed at the opening (the exposed surface of the aluminum substrate) of the anodized film Y and below the anodized film Y. An insulating substrate on which X was formed was produced.
In addition, the exposed part of the anodic oxide film X is a part which comprises the insulation area | region A of the insulating substrate finally produced.

(Comparative Example 1)
An insulating substrate was produced in the same manner as in Example 5 except that the first anodizing treatment was not performed. In addition, the thickness of the oxide film which forms the insulation area | region A became 5 nm because the natural oxide film was formed in the aluminum substrate surface.

(Comparative Example 2)
In the second anodizing treatment, the same as Example 1 except that the treatment time was changed so that the total thickness of the formed anodized film (the total of the anodized film X and the anodized film Y) was 1 μm. An insulating substrate was produced by the method described above.

(Comparative Example 3)
In the second anodizing treatment, the same as Example 1 except that the treatment time was changed so that the total thickness of the formed anodized film (the total of the anodized film X and the anodized film Y) was 100 μm. An insulating substrate was produced by the method described above.

(Comparative Example 4)
The treatment time is changed so that the thickness of the anodic oxide film X formed in the first anodic oxidation treatment is 2 μm (2000 nm), and the entire anodic oxide film formed in the second anodic oxidation treatment (anodic oxidation) An insulating substrate was produced in the same manner as in Example 3 except that the treatment time was changed so that the thickness of the film X and the anodized film Y was 2 μm.

(Comparative Example 5)
After the first anodizing treatment and the mask layer are formed by the same method as in Example 4 using an aluminum substrate having a thickness of 3.0 mm, the entire anodized film formed in the second anodizing treatment ( The treatment time was changed so that the thickness of the anodic oxide film X and the anodic oxide film Y was 2000 μm, and the anodization treatment was performed, but after 100 hours, the film thickness became thicker than 1000 μm. Therefore, an insulating substrate could not be manufactured.

(Comparative Example 6)
In the first anodizing treatment, a constant current anodizing treatment was performed using a sulfuric acid electrolyte solution of 150 g / L at 50 ° C. and a current density of 20 A / dm ² , and the thickness of the anodizing treatment X was 20 μm (20000 nm). An insulating substrate was fabricated by the same method as in Example 5 except that the processing time was changed so that

(Comparative Example 7)
In the first anodizing treatment, an insulating substrate was produced in the same manner as in Example 4 except that the treatment time was changed so that the thickness of the formed anodized film X was 100 μm (100,000 nm).

<Calculation of _{T A} and _{T B>}
About each produced insulating substrate, the film thickness (TA) of the anodic oxide film (anodized film X) which forms the insulating region _A , and the total of the anodic oxide film (anodized films X and Y) which form the insulating region B the thickness of) (T _B), the four-way four points and a total of nine positions therebetween five locations in each plane observed by observation of FE-SEM from the sectional direction, the 10 points of thicknesses of respective portions After calculating from the measurement average value, the thickness of 9 places was averaged. The results are shown in Table 1 below.
In Comparative Example 5, since an insulating substrate having a desired (2000 μm) film thickness (T _B ) could not be manufactured, the film thickness (T _B ) is indicated as “−”.

<Insulation>
About each produced insulation board | substrate, the dielectric breakdown voltage (kV) was measured according to the method of JISC2110 specification. From the measurement results, the dielectric breakdown voltage of 1 kV or more was evaluated as “◯” and the value less than 1 kV as “x” as an insulating index. The results are shown in Table 1 below.
In Comparative Example 5, since an insulating substrate having a desired film thickness (T _B ) could not be manufactured, the evaluation of insulation is indicated as “−”.

<Heat dissipation>
A heat source having a size of 0.5 mm × 0.5 mm and a temperature of 300 ° C. was brought into contact with the insulating region A of each manufactured insulating substrate, and the temperature (° C.) of the back substrate after 2 seconds was measured.
Here, a temperature-controllable soldering iron was used as the heat source.
From the measurement results, 250 ° C. or higher was evaluated as “◎”, 200 ° C. or higher and lower than 250 ° C. as “◯”, 100 ° C. or higher and lower than 200 ° C. as Δ, and less than 100 ° C. as X. The results are shown in Table 1 below.
The evaluation of heat dissipation is ◎, no practical problem if the evaluation of ○ and △, In Comparative Example 5, to produce an insulating substrate having a desired thickness of the _(2000μm) (T B) Since it was not possible, the evaluation of heat dissipation is written as “−”.

<Thickness distribution>
When the film thickness (T _A ) of the anodic oxide film forming the insulating region A and the film thickness (T _B ) of the anodic oxide film forming the insulating region B were calculated as described above, the thicknesses of nine locations were calculated for each. .
The ratio (T _A1 / T _{A to} T _A9 / T _A , T _A ) of the thickness (T _{A1 to} T _A9 , T _{B1 to} T _B9 ) of each part and the average value (T _A , T _B ) of the nine parts. _B1 / T _{B to} T _B9 / T _B ) are all between ½ and 2, ◯, when ½ to 2/3 or 1.5 to 2, and △ The case where it becomes becomes x. The results are shown in Table 1 below.
In Comparative Example 5, an insulating substrate having a desired (2000 μm) film thickness (T _B ) could not be manufactured, and thus the evaluation of the film thickness distribution is expressed as “−”.

<Calculation of micropore ordering>
About each produced insulation board | substrate, the surface of the anodic oxide film which forms the insulation area | region A was observed by FE-SEM. The degree of ordering defined by the above formula (i) was determined from an observed surface photograph (magnification 20000 times) using 300 arbitrary micropores in a 1 μm × 1 μm visual field. The results are shown in Table 1 below.
In addition, since the anodized film which forms the insulation area | region A is a nonporous film in the insulating substrate produced in Example 6, the result of the degree of ordering is described as “-”. Since an insulating substrate having a film thickness (T _B ) of (2000 μm) could not be manufactured, the result of the degree of ordering is written as “−”.

<Total reflectance>
About each produced insulation board | substrate, the total reflectance in the 300-700 nm wavelength range in the insulation area | region A was measured with the spectral reflectance measuring device (SP64, product made from X-Rite). The results are shown in Table 1 below.
In Comparative Example 5, an insulating substrate having a desired (2000 μm) film thickness (T _B ) could not be manufactured, and thus the evaluation of total reflectance is expressed as “−”.

From the results shown in Table 1, it can be seen that when the ratio (T _B / T _A ) is larger than 2000, the film thickness distribution becomes very bad and there is a practical problem (Comparative Examples 1 and 3), and the ratio (T _B / T _a) was found to be smaller than the insulating or heat radiation 2 is poor (Comparative examples 4 and 6).
In addition, it was found that the insulation properties were very poor when the film thickness (T _B ) was smaller than 2 μm (Comparative Example 2), and it was found that an anodic oxide film thicker than 1000 μm could not be formed (Comparative Example 5). .
Furthermore, it was found that when the film thickness (T _A ) is larger than 80 μm, the heat dissipation becomes very poor (Comparative Example 7).

On the other hand, the insulating substrates produced in Examples 1 to 9 in which the film thickness (T _A ), the film thickness (T _B ), and the ratio thereof (T _B / T _A ) are in a predetermined range are all insulating and heat dissipation. It was found that the properties were good.
In particular, when the film thickness (T _A ) is less than 10 μm (10000 nm), it can be seen that the heat dissipation becomes better, and when the ratio (T _B / T _A ) exceeds 20, the insulation and heat dissipation are improved. It was found that there was a tendency to be better (Examples 1-6 and 9).
It was also found that the total reflectance of the insulating region A was improved by improving the degree of ordering of the anodized film forming the insulating region A (Example 3).
Furthermore, it was found that by making the anodized film forming the insulating region A a nonporous film, the heat dissipation is further improved and the total reflectance of the insulating region A is improved (Example 6).

[Production of wiring board]
<Formation of mask layer: (Reference drawing: FIG. 11 (A) → (B))>
The surface of each insulating substrate prepared in Examples 1, 3 and 4 and Comparative Examples 4 and 6 is coated with a photoresist (FC-230G, manufactured by Toyobo Co., Ltd.), and an opening is formed in the anodized film portion forming insulating region B. UV irradiation was applied through a mask to give a pattern.
Thereafter, the non-irradiated portion is completely removed by developing with an alkaline developer, and the surface of the anodized film forming the insulating region B is exposed in a pattern, and only on the surface of the anodized film forming the insulating region A A mask layer was formed.

<Formation of metal wiring layer (reference drawing: FIG. 11 (B) → (C))>
A seed layer was formed on the anodized film forming the insulating region B by an electroless Ni—Cu plating method, and then a 17 μm thick Cu wiring layer was formed by an electrolytic copper plating method.

<Removal of mask layer (reference drawing: FIG. 11 (C) → (D))>
After forming the Cu wiring layer, the electroless Ni plating method and the electroless Au plating method are sequentially applied, and after coating the surface of the Cu wiring layer, the mask layer is removed using a monomethanolamine solvent, and the wiring board is formed. Produced.

[Production of semiconductor packages]
<Mounting power semiconductors>
A Si power semiconductor was mounted by wire bonding on the anodized film forming the insulating region A of each wiring board manufactured using the insulating substrates of Examples 1 and 4 and Comparative Examples 4 and 6, and the Cu wiring layer and the power Connected with semiconductor.

<Driving test>
The surface of the surface of the wiring board opposite to the surface on which the power semiconductor was mounted was brought into contact with the radiating fins with heat conductive grease, the power semiconductor was driven, and the surface temperature was measured. The results are shown in Table 2 below.
In the wiring board manufactured using the insulating substrate of Comparative Example 4, the leakage current passed through the anodized film forming the insulating region A, leaked to the aluminum substrate, and was short-circuited. In this case, “−” is used.

  From the results shown in Table 2, it was found that the chip temperature of the power semiconductor can be kept low in the wiring board manufactured using the insulating substrates of Examples 1 and 4.

[Production of LED package]
<Mounting of blue LED>
A blue LED light emitting element is mounted by wire bonding on the anodized film forming the insulating region A of each wiring board manufactured using the insulating substrates of Examples 3 and 4 and Comparative Examples 4 and 6, and a Cu wiring layer and A blue LED light emitting element was connected.

<Formation of yellow phosphor-containing sealing material>
After mounting the blue LED light emitting element, a pseudo white LED package was produced by providing a sealing material containing a yellow phosphor on the surface.

<Luminous efficiency>
For each of the pseudo white type LED packages thus manufactured, the voltage E (V) when light is emitted at a constant current value (0.08 A) and the light constraint amount (lm) when the chromaticity X value = 0.33. The light emission efficiency (lm / W) was calculated from the following formula. The results are shown in Table 3 below.
In the wiring board manufactured using the insulating substrate of Comparative Example 4, the leakage current passed through the anodized film forming the insulating region A, leaked to the aluminum substrate, and was short-circuited. It is written as “−”.
Luminous efficiency (1m / W) = light constraint (lm) / (0.08 (A) × E (V))

  From the results shown in Table 3, it was found that the higher the total reflectance, the higher the luminous efficiency.

1 Insulating substrate 2 Aluminum substrate 3 Insulating layer 3A Insulating region A
3B Insulation region B
4 Mask 5 Dimple 6 Recess 7 Metal wiring layer 8 Semiconductor element (LED light emitting element)
DESCRIPTION OF SYMBOLS 9 Wire 10 Transparent resin 11 Fluorescent particle 20 Wiring board 30 Semiconductor package 31, 32 Anodized film 40 LED package 101, 102, 104, 105, 107, 108 Micropore 103, 106, 109 Yen 410 Anodizing apparatus 412 Feed tank 414 Electrolytic treatment tank 416 Aluminum substrate 418, 426 Electrolyte 420 Feed electrode 422, 428 Roller 424 Nip roller 430 Electrode electrode 432 Tank wall 434 DC power supply

Claims (10)

An insulating substrate having an aluminum substrate and an insulating layer provided on at least a part of the surface of the aluminum substrate,
The insulating layer is an anodized film of aluminum;
The anodized film has an insulating region A having a thickness (T _A ) of 20 nm to 80 μm and an insulating region B having a thickness (T _B ) of 2 to 1000 μm,
The insulating substrate whose ratio (T _B / T _A ) between the film thickness of the insulating region A and the film thickness of the insulating region B is 2 to 2000.   The insulating substrate according to claim 1, wherein the total reflectance in the wavelength region of 300 to 700 nm in the insulating region A is 80% or more. The anodized film forming the insulating region A is a porous film having micropores;
The insulating substrate according to claim 1 or 2, wherein the degree of ordering defined by the following formula (i) of the micropore is 20% or more.
Ordering degree (%) = Y / X × 100 (i)
In the formula (i), X represents the total number of micropores in the measurement range. Y is centered on the center of gravity of one micropore, and when a circle with the shortest radius inscribed in the edge of another micropore is drawn, the center of gravity of the micropore other than the one micropore is placed inside the circle. This represents the number in the measurement range of the one micropore to be included.   The insulating substrate according to claim 1, wherein the anodized film forming the insulating region A is a nonporous film. The anodic oxide film has an uneven shape,
The insulating region A forms a recess in the anodized film;
The insulating substrate according to claim 1, wherein the insulating region B forms a convex portion of the anodized film. The aluminum substrate has a convex portion;
An anodized film forming the insulating region A is formed on the surface of the convex portion of the aluminum substrate,
The insulating substrate according to claim 1, wherein the anodized film forming the insulating region A and the anodized film forming the insulating region B form substantially the same surface.   A wiring board comprising: the insulating substrate according to claim 1; and a metal wiring layer provided on an anodized film that forms the insulating region B of the insulating substrate.   A semiconductor package comprising: the wiring substrate according to claim 7; and a semiconductor element provided on an anodized film that forms the insulating region A of the insulating substrate.   The LED package which has a wiring board of Claim 7, and the LED light emitting element provided in the upper part of the anodic oxide film which forms the said insulation area | region A of the said insulated substrate.   The wiring board according to claim 9, wherein the wiring board is a wiring board having the insulating substrate according to claim 5 and a metal wiring layer provided on an anodized film that forms the insulating region B of the insulating substrate. LED package.