JP2012195607A - High breakdown voltage field-effect transistor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain sufficiently low on-resistance without increasing the element area of a high breakdown voltage field-effect transistor.SOLUTION: A high breakdown voltage pMOS transistor is formed as follows: A drain low-concentration region 103 and a source low-concentration region 104 are formed so as to sandwich a channel formation region 102a in an n-type region 102 of a semiconductor substrate 101. A drain high-concentration region 105 and a source high-concentration region 106 are formed. A gate oxide film 109 is formed. A field oxide film 110 is formed in regions including the ends of gate oxide film 109 and the low-concentration regions 103 and 104. A gate electrode 111 is formed from the gate oxide film 109 to the ends of the field oxide film 110. In the high breakdown voltage pMOS transistor, a non-oxidation region 112 in which the field oxide film 110 is not formed is provided between the gate electrode 111 and the drain high-concentration region 105. The impurity in the drain low-concentration region 103 is hardly taken into the field oxide film 110 during manufacture, thereby suppressing an increase in on-resistance.

Description

  The present invention relates to a high voltage field effect transistor. The present invention can be applied to, for example, an HV-pMOS (High Voltage p-channel Metal Oxide Semiconductor) transistor.

  As a document disclosing a high withstand voltage field effect transistor, for example, the following Patent Document 1 is known.

  For example, as shown in FIG. 16 of the same document, a high breakdown voltage nMOS transistor includes a low concentration region (n−offset drain region 12 in the same document) and a high concentration region (n + in the same document) as a drain region. A drain region 17). The gate oxide film 14 is formed so as to cover the channel formation region and the end of the drain low concentration region 12. A field oxide film 13 is formed in a region where the drain high concentration region 17 is not formed and the gate oxide film 14 is not formed in the low drain concentration region 12. Then, a gate electrode 15 is formed so as to cover the gate oxide film 14 and the end of the field oxide film 13. That is, the drain side end of the gate electrode 15 is disposed not on the gate oxide film 14 but on the field oxide film 13.

  The reason why the drain region has a double structure of the high concentration region 17 and the low concentration region 12 is to improve the source-drain breakdown voltage. The longer the distance of the low concentration region 12, that is, the longer the distance between the channel formation region and the high concentration region 17, the higher the source-drain breakdown voltage.

  The reason why the drain side end of the gate electrode 15 is disposed on the field oxide film 13 is that the electric field tends to concentrate near the end of the gate electrode 15. That is, by disposing the end portion of the gate electrode 15 on the field oxide film 13, the electric field concentration in the drain region can be relaxed and the breakdown voltage of the MOS transistor can be increased.

Japanese Patent Laid-Open No. 2003-204062

  As described above, in order to improve the breakdown voltage of the MOS transistor, it is desirable to increase the distance between the low concentration regions, that is, increase the distance between the channel formation region and the high concentration region.

  However, as the distance of the low concentration region is increased, there is a disadvantage that the on-resistance increases and the driving capability of the MOS transistor decreases.

  In addition, if the distance of the low-concentration region is increased, there is a disadvantage that the element area increases and the integration rate of the integrated circuit decreases.

  Here, even if the distance of the low concentration region is increased, an increase in on-resistance can be prevented / suppressed by increasing the channel width accordingly. However, if the channel width of the MOS transistor is increased, the element area is further increased, and the problem of lowering the integration rate becomes more remarkable.

  An object of the present invention is to provide a high breakdown voltage field effect transistor having a small on-resistance and a small element area.

  The high breakdown voltage field effect transistor according to the present invention is formed in a p-type low drain concentration region and a low source concentration region formed in a n-type region of a semiconductor substrate with a channel formation region interposed therebetween, and a low drain concentration region. A drain high concentration region having a higher impurity concentration than the drain low concentration region, a gate insulating film covering at least the surface of the channel formation region, and a drain side end of the gate insulating film so as to be in contact with the drain low concentration region. Covering the entire surface of the channel formation region via the second field oxide film formed on the low concentration source region and the gate insulating film so as to be in contact with the first field oxide film and the source side end of the gate insulating film And the first field oxide film is formed so as to cover the end portion of the low-concentration drain region, and the source is formed through the second field oxide film. The gate electrode formed so as to cover the end of the concentration region, and the gate electrode and the drain high concentration region in the low concentration drain region are sandwiched, and the drain high concentration region and the first field oxide film are formed on the surface. A non-oxidized region that is not formed and a position on the drain low concentration region facing the first field oxide film across the non-oxidized region and the drain high concentration region, and adjacent to the drain high concentration region And a third field oxide film.

  According to the present invention, the low-drain region is provided with the non-oxidized region sandwiched between the gate electrode and the high-drain region and having no high-drain region and field oxide film formed on the surface. The phenomenon that the p-type impurity in the drain low concentration region is sometimes absorbed by the field oxide film can be suppressed. Thereby, the p-type impurity concentration in the drain low concentration region can be kept high, and therefore a sufficiently low on-resistance can be obtained without increasing the element area of the high breakdown voltage field effect transistor.

1 is a cross-sectional view conceptually showing the structure of a high voltage pMOS transistor according to a first embodiment. It is process sectional drawing which shows notionally the manufacturing process which concerns on 1st Embodiment. It is process sectional drawing which shows notionally the manufacturing process which concerns on 1st Embodiment. It is sectional drawing which shows notionally the structure of the high voltage | pressure-resistant pMOS transistor which concerns on 2nd Embodiment. It is process sectional drawing which shows notionally the manufacturing process which concerns on 2nd Embodiment.

  Embodiments of the present invention will be described below with reference to the drawings. In the drawings, the size, shape, and arrangement relationship of each component are shown only schematically to the extent that the present invention can be understood, and the numerical conditions described below are merely examples. .

First Embodiment A high breakdown voltage field effect transistor and a manufacturing method thereof according to a first embodiment will be described with reference to FIGS.

  FIG. 1 is a sectional view conceptually showing the structure of a high voltage pMOS transistor according to this embodiment.

  As shown in FIG. 1, the high breakdown voltage pMOS transistor 100 of this embodiment includes a low concentration drain region 103, a low concentration source region 104, and a high concentration drain region 105 formed in an n well 102 of a semiconductor substrate 101. Source high concentration region 106, guard ring layers 107 and 108, gate oxide film 109, field oxide film 110, gate electrode 111, non-oxidized region 112, intermediate insulating film 113, contact layer 114, 115 and wiring patterns 116 and 117.

  As the semiconductor substrate 101, a p-type silicon substrate can be used.

  The n well 102 is formed by implanting n-type impurity ions such as phosphorus into the surface of the semiconductor substrate 101. The impurity concentration of the n well 102 is, for example, 1 × 10 16 cm −3.

The drain low concentration region 103 and the source low concentration region 104 are formed by implanting impurity ions such as boron into the n-type region 102 of the semiconductor substrate 101. The impurity concentration of the low concentration drain region 103 and the low concentration source region 104 is, for example, 1 × 10 ¹⁶ cm ⁻³ . A region sandwiched between the low concentration drain region 103 and the low concentration source region 104 is a channel formation region 102a.

The drain high concentration region 105 is formed in the drain low concentration region 103. The drain high concentration region 105 has a higher impurity concentration (for example, 1 × 10 ²⁰ cm ⁻³ ) than the drain low concentration region 103. The drain high concentration region 105 is formed at a position where the distance Ld to the channel formation region 102a is, for example, 10 μm or less.

The source high concentration region 106 is formed in the source low concentration region 104. The high source concentration region 106 has a higher impurity concentration (for example, 1 × 10 ²⁰ cm ⁻³ ) than the low source concentration region 104. The source high concentration region 106 is formed at a position where the distance Ls to the channel formation region 102a is shorter than the above-described Ld.

  The guard ring layers 107 and 108 are layers for electrically isolating the high breakdown voltage pMOS transistor 100 from other adjacent elements. The guard ring layers 107 and 108 are formed by implanting n-type impurity ions outside the low concentration drain region 103 and the low concentration source region 104. The impurity concentration of the guard ring layers 107 and 108 is, for example, 1 × 10 20 cm −3.

  The gate oxide film 109 is a silicon oxide film formed so as to cover at least the surface of the channel formation region 102a. The thickness of the gate oxide film 109 is, for example, not less than 200 nm and not more than 250 nm.

  The field oxide film 110 is formed so as to be in contact with the end portion of the gate oxide film 109 and covers a portion other than the drain high concentration region 105 and the non-oxide region 112 in the region where the drain low concentration region 103 is formed. Further, the field oxide film 110 of this embodiment covers a region other than the source high concentration region 106 in the region where the source low concentration region 104 is formed. The thickness of the field oxide film 110 is, for example, 800 nm or less. The field oxide film 110 is formed so that the length from the end portion on the gate oxide film 109 side to the end portion on the non-oxidized region 112 side is 1.5 μm or more and 3.0 μm or less.

  The gate electrode 111 is formed so as to cover the entire surface of the channel formation region 102 a via the gate oxide film 109 and to cover the end portions of the drain low concentration region 103 and the source low concentration region 104 via the field oxide film 110. The The structure of the gate electrode 111 is arbitrary, but in this embodiment, a layered structure of a polysilicon layer 111a and a tungsten silicide layer 111b is used.

  The non-oxidized region 112 is sandwiched between the gate electrode 111 and the high drain concentration region 105 in the low drain concentration region 103, and the drain high concentration region 105 and the field oxide film 110 are not formed on the surface. It is an area. In this embodiment, the non-oxidized region 112 is provided on the surface of the drain low concentration region 103 (that is, the region not covered with the field oxide film 110 is provided on the surface of the drain low concentration region 103). An increase in on-resistance can be suppressed without increasing the element area of the withstand voltage pMOS transistor (described later).

  The intermediate insulating film 113 is formed by covering the entire surface of the semiconductor substrate 101 with a silicon oxide film or the like, for example.

  The contact layers 114 and 115 are interlayer wirings for electrically connecting the drain high concentration region 105 and the source high concentration region 106 to the wiring patterns 116 and 117. The contact layers 114 and 115 are formed by, for example, burying tungsten in a contact hole formed in the intermediate insulating film 113.

  The wiring patterns 116 and 117 are conductive layers for wiring the drain high concentration region 105 and the source high concentration region 106, and are formed of aluminum, for example.

  Next, a method for manufacturing the high voltage pMOS transistor shown in FIG. 1 will be described. 2 and 3 are process sectional views conceptually showing the manufacturing process according to this embodiment.

(1) First, n-type impurity ions such as phosphorus are implanted into the surface of the semiconductor substrate 101, for example, at a maximum dose of about 1 × 10 ¹³ cm ⁻² to form the n-well 102. Then, p-type impurity ions such as boron are implanted into the n-well 102 at a dose amount of about 1 × 10 ¹³ cm ^{−2 at the} maximum, thereby forming the low-drain region 103 and the low-source region 104. (See FIG. 2A).

  (2) Next, a field oxide film 110 having a film thickness of, for example, 800 nm or less is formed on the surface of the semiconductor substrate 101 using, for example, a LOCOS (localized oxidation of silicon) method. The field oxide film 110 is not formed in the region where the drain high concentration region 105, the source high concentration region 106, the guard ring layers 107 and 108, and the gate oxide film 109 are formed, and the region to be the non-oxidized region 112. . As described above, in this embodiment, the length from the end E1 on the region side where the gate oxide film 109 is formed to the end E2 of the region to be the non-oxidized region 112 is 1.5 μm or more and 3.0 μm or less. Then, a field oxide film 110 is formed (see FIG. 2B).

  (3) An oxide film having a film thickness of, for example, 250 nm or less is formed by oxidizing the surface of the semiconductor substrate 101 using, for example, a thermal oxidation method, and then a region other than the channel formation region 102a is formed using a resist pattern. The gate oxide film 109 is formed by selectively etching the upper oxide film. Further, ion implantation for adjusting the threshold voltage is performed on the channel formation region 102a using a normal ion implantation technique. Thereafter, a polysilicon layer 111a and a tungsten silicide layer 111b are formed on the gate oxide film 109 using, for example, a normal thin film deposition technique. Thus, the gate electrode 111 is completed (see FIG. 2C).

(4) Subsequently, a resist mask 301 is formed using a normal photolithography technique or the like. The resist mask 301 exposes only the region where the guard ring layers 107 and 108 are formed and the field oxide film 110 therearound, and covers the other regions. Then, for example, arsenic ions are implanted at a dose of 1 × 10 ¹⁶ cm ⁻² using the resist mask 301 to form the guard ring layers 107 and 108 (see FIG. 3A). Thereafter, the resist mask 301 is removed.

(5) Next, a resist mask 302 is formed using a normal photolithography technique or the like. The resist mask 302 exposes only the region where the drain high concentration region 105 and the source high concentration region 106 are formed and the field oxide film 110 therearound, and covers the other regions. Then, using the resist mask 302, for example, BF ₂ ions are implanted at a dose of about 5 × 10 ¹⁵ cm ^{−2 at} maximum, thereby forming the drain high concentration region 105 and the source high concentration region 106 (FIG. 3 ( B)). Thereafter, the resist mask 302 is removed. Thus, in this embodiment, since the exposed surface of the drain low concentration region 103 is covered with the resist mask 302, this exposed surface can be the non-oxidized region 112.

  (6) Finally, the intermediate insulating film 113, the contact layers 114 and 115, and the wiring patterns 116 and 117 are formed using a normal deposition technique, a photolithography technique, etc., and the high breakdown voltage as shown in FIG. The pMOS transistor 100 is completed.

  Next, the reason why the on-resistance of the high voltage pMOS transistor according to this embodiment is reduced will be described.

  When manufacturing a high breakdown voltage MOS transistor, the impurity concentration in the drain low concentration region is determined in consideration of the on-resistance and breakdown voltage of the transistor. In the transistor, the on-resistance can be reduced as the impurity concentration in the low drain concentration region is increased. On the other hand, the higher the impurity concentration in the low-drain region, the steeper concentration gradient at the interface between the well region and the low-drain region, and the breakdown voltage of the transistor decreases. Therefore, in order to obtain a transistor having a sufficiently low on-resistance and a sufficiently high breakdown voltage, it is necessary to control the impurity concentration in the drain low concentration region with high accuracy.

  Here, in the conventional high breakdown voltage MOS transistor, a field oxide film is formed on the entire surface of the low drain concentration region except for a portion where the high drain concentration region is formed and a portion where the gate oxide film is formed. (See Patent Document 1 above).

  However, in the p-type high breakdown voltage MOS transistor, when a field oxide film is formed on the surface of the drain low concentration region, p-type impurities in the drain low concentration region are taken into the field oxide film. In addition, the impurity concentration decreases near the surface of the drain low concentration region (that is, near the interface between the drain low concentration region and the field oxide film), and the on-resistance increases. On the other hand, since the impurity concentration at the deep position of the drain low concentration region does not change, if the impurity concentration of the entire drain low concentration region is set high in advance, the breakdown voltage of the transistor becomes very low.

  In contrast, in this embodiment, in the p-type high breakdown voltage MOS transistor, a non-oxidized region is provided between the gate electrode and the drain high concentration region, so that the contact area between the drain low concentration region and the field oxide film is increased. Was kept small. As a result, the phenomenon that the p-type impurity in the low-drain concentration region is absorbed by the field oxide film at the time of manufacturing can be suppressed, so that the decrease in the p-type impurity concentration in the low-drain region can be suppressed. Therefore, according to this embodiment, a sufficiently low on-resistance can be obtained without increasing the element area of the high breakdown voltage field effect transistor or decreasing the breakdown voltage. As described above, in this embodiment, the non-oxidized region 112 is separated from the end portion of the non-oxidized region 112 and the end portion of the gate oxide film 109 (that is, the field oxide film formed between these end portions). Is formed to be 1.5 μm or more and 3.0 μm or less. When the distance is less than 1.5 μm, it becomes difficult to form the end of the gate electrode 111 on the field oxide film 110, and when the distance is greater than 3.0 μm, an increase in on-resistance is suppressed. This is because the effect of doing is insufficient.

  On the other hand, in an n-type high breakdown voltage pMOS transistor, n-type impurities move to the vicinity of the surface of the drain low concentration region when forming the field oxide film, but are hardly taken into the field oxide film. For this reason, the on-resistance of the entire transistor hardly increases, so that a non-oxidized region may not be provided.

  As described above, according to the high breakdown voltage pMOS transistor of this embodiment, since the non-oxidized region 112 is provided between the gate electrode 111 and the drain high concentration region 105, without increasing the element area, A sufficiently low on-resistance can be obtained.

  In addition, according to the method of manufacturing the high voltage pMOS transistor according to this embodiment, the mask pattern 302 that covers at least the portion that should become the non-oxidized region 112 and the gate electrode 111 is formed, and then the mask pattern 302 is used. By forming the high concentration drain region 105 by introducing p-type impurities (see step (5) above), the non-oxidized region 112 can be formed between the gate electrode 111 and the high concentration drain region 105. .

  In this embodiment, the case where the high concentration region 106 is formed also in the source low concentration region 104 has been described as an example. However, the present embodiment is also applied to the case where the high concentration region 106 is not formed. Can do. In this embodiment, the entire surface of the source low concentration region 104 is covered with the field oxide film 110. For example, even when the field oxide film is not formed on the source low concentration region 104 side, The invention can be applied. That is, if the non-oxidized region 112 is provided on the drain low concentration region 103, the effect of the present invention can be obtained regardless of the configuration on the source side.

Second Embodiment Next, a high breakdown voltage field effect transistor and a method for manufacturing the same according to a second embodiment will be described with reference to FIGS.

  FIG. 4 is a sectional view conceptually showing the structure of the high voltage pMOS transistor according to this embodiment. In FIG. 4, the components given the same reference numerals as those in FIG. 1 are the same as those in FIG. 1.

  As shown in FIG. 4, the high breakdown voltage pMOS transistor 400 of this embodiment is different from the above-described first embodiment in that a p-type low resistance layer 401 is provided on the surface of the non-oxidized region 112.

  The p-type low resistance layer 401 is formed at a position corresponding to the non-oxidized region 112 of the first embodiment. The impurity concentration of the p-type low resistance layer 401 is set to a value higher than that of the drain low concentration region 103 and lower than that of the drain high concentration region 105.

  Next, a manufacturing method of the high voltage pMOS transistor shown in FIG. 4 will be described. FIG. 5 is a process sectional view conceptually showing the manufacturing process according to this embodiment.

  (1) First, similarly to the steps (1) to (3) of the first embodiment, an n well 102, a drain low concentration region 103, a source low concentration region 104, a gate oxide film are formed on the surface of the semiconductor substrate 101. 109, a field oxide film 110 and a gate electrode 111 are formed (see FIG. 5A).

  (2) Next, a resist mask 501 is formed using a normal photolithography technique or the like. The resist mask 501 is formed so as to cover the region where the guard ring layers 107 and 108 are formed and the field oxide film 110 around the region (see FIG. 5B).

(3) Subsequently, by using the resist mask 501, for example, BF ₂ ions are implanted at a dose of about 1 × 10 ¹³ cm ⁻² to form the p-type low resistance layer 401 (see FIG. 5C). ). When a low breakdown voltage transistor (ie, LV-MOS transistor) is manufactured simultaneously with the high breakdown voltage pMOS transistor 400, simultaneously with ion implantation for forming an LDD (Lightly Doped Drain) region of the LV-MOS transistor, A p-type low resistance layer 401 may be formed.

  (4) Thereafter, in the same manner as in the steps (4) to (6) of the first embodiment, the guard ring layers 107 and 108, the drain high concentration region 105, the source high concentration region 106, and the intermediate insulating film 113 are contacted. Layers 114 and 115 and wiring patterns 116 and 117 are formed to complete a high voltage pMOS transistor 400 as shown in FIG.

  As described above, according to the high-breakdown-voltage pMOS transistor according to this embodiment, since the low-resistance layer 401 is provided, the on-resistance can be further reduced as compared with the first embodiment.

DESCRIPTION OF SYMBOLS 100 High voltage | pressure-resistant pMOS transistor 101 Semiconductor substrate 102 N well 103 Drain low concentration area | region 104 Source low concentration area | region 105 Drain high concentration area | region 106 Source high concentration area | region 107,108 Guard ring layer 109 Gate oxide film 110 Field oxide film 111 Gate electrode 112 Non- Oxidized region 113 Intermediate insulating film 114, 115 Contact layer 116, 117 Wiring pattern

Claims (7)

A p-type lightly doped drain region and a lightly doped source region formed in the n-type region of the semiconductor substrate with the channel forming region interposed therebetween;
A drain high concentration region having a higher impurity concentration than the drain low concentration region formed in the drain low concentration region;
A gate insulating film covering at least the surface of the channel formation region;
A first field oxide film formed on the drain low concentration region so as to be in contact with the drain side end of the gate insulating film;
A second field oxide film formed on the source low-concentration region so as to be in contact with the source side end of the gate insulating film;
The second field oxide film is formed so as to cover the entire surface of the channel formation region via the gate insulating film and to cover an end portion of the low drain concentration region via the first field oxide film. A gate electrode formed so as to cover an end of the low concentration source region via
Of the low concentration drain region, a non-oxidized region sandwiched between the gate electrode and the high concentration drain region and having the drain high concentration region and the first field oxide film not formed on the surface;
A third field formed on the lightly doped drain region at a position facing the first field oxide film across the non-oxidized region and the heavily doped drain region and adjacent to the heavily doped drain region. A high breakdown voltage field effect transistor comprising an oxide film.   2. The length of the first field oxide film from the end portion on the gate insulating film side to the end portion on the non-oxidized region side is 1.5 μm or more and 3.0 μm or less. High voltage field effect transistor.   3. The high resistance layer according to claim 1, wherein a p-type low resistance layer having an impurity concentration higher than that of the low drain concentration region and lower than that of the high drain concentration region is formed in the non-oxidized region. Withstand voltage field effect transistor. A source high concentration region having a higher impurity concentration than the source low concentration region is formed in the source low concentration region; and
The high breakdown voltage field effect transistor according to claim 1, wherein a region in which the source high concentration region is not formed in the source low concentration region is covered with a field oxide film. .   5. The high withstand voltage electric field according to claim 1, wherein a distance between the channel formation region and the drain high concentration region is longer than a distance between the channel formation region and the source high concentration region. Effect transistor.   6. The high breakdown voltage field effect transistor according to claim 1, wherein the gate insulating film has a thickness of 200 nm to 250 nm. 7. The high breakdown voltage field effect transistor according to claim 1, wherein the source high concentration region is formed at a position adjacent to the second field oxide film.

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