JP2012174756A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2012174756A5 JP2012174756A5 JP2011032897A JP2011032897A JP2012174756A5 JP 2012174756 A5 JP2012174756 A5 JP 2012174756A5 JP 2011032897 A JP2011032897 A JP 2011032897A JP 2011032897 A JP2011032897 A JP 2011032897A JP 2012174756 A5 JP2012174756 A5 JP 2012174756A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon dioxide
- insulating film
- dioxide fine
- fine particle
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 48
- 239000010419 fine particle Substances 0.000 claims description 21
- 239000000377 silicon dioxide Substances 0.000 claims description 21
- 235000012239 silicon dioxide Nutrition 0.000 claims description 21
- 239000006185 dispersion Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229920002125 Sokalan® Polymers 0.000 claims description 3
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 claims description 2
- -1 alkyl sulfonic acid Chemical compound 0.000 claims description 2
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 2
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 2
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 10
- 238000010438 heat treatment Methods 0.000 claims 9
- 229920001709 polysilazane Polymers 0.000 claims 7
- 239000011248 coating agent Substances 0.000 claims 5
- 229920000642 polymer Polymers 0.000 claims 5
- 239000004094 surface-active agent Substances 0.000 claims 4
- 239000002612 dispersion medium Substances 0.000 claims 3
- 239000000203 mixture Substances 0.000 claims 3
- 239000007788 liquid Substances 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims 1
- 239000012190 activator Substances 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 239000011229 interlayer Substances 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 239000002245 particle Substances 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical compound OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000008119 colloidal silica Substances 0.000 description 2
- 239000004584 polyacrylic acid Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- WBIQQQGBSDOWNP-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O WBIQQQGBSDOWNP-UHFFFAOYSA-N 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- 229920003078 Povidone K 12 Polymers 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229940060296 dodecylbenzenesulfonic acid Drugs 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011032897A JP5781323B2 (ja) | 2011-02-18 | 2011-02-18 | 絶縁膜の形成方法 |
| KR1020137023628A KR101663506B1 (ko) | 2011-02-18 | 2012-02-17 | 절연막의 형성 방법 및 이에 사용되는 이산화규소 미립자 분산액 |
| US13/984,925 US9165818B2 (en) | 2011-02-18 | 2012-02-17 | Method for forming insulating film |
| EP12746780.1A EP2677535B1 (en) | 2011-02-18 | 2012-02-17 | Method for forming insulating film |
| CN201280008540.3A CN103380487B (zh) | 2011-02-18 | 2012-02-17 | 绝缘膜的形成方法 |
| TW101105177A TWI549187B (zh) | 2011-02-18 | 2012-02-17 | 絕緣膜的形成方法 |
| PCT/JP2012/053756 WO2012111789A1 (ja) | 2011-02-18 | 2012-02-17 | 絶縁膜の形成方法 |
| SG2013057187A SG192172A1 (en) | 2011-02-18 | 2012-02-17 | Method for forming insulating film |
| IL227985A IL227985B (en) | 2011-02-18 | 2013-08-15 | Method for forming insulating film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011032897A JP5781323B2 (ja) | 2011-02-18 | 2011-02-18 | 絶縁膜の形成方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015102070A Division JP2015173283A (ja) | 2015-05-19 | 2015-05-19 | 絶縁膜形成に用いられる組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012174756A JP2012174756A (ja) | 2012-09-10 |
| JP2012174756A5 true JP2012174756A5 (enExample) | 2013-10-10 |
| JP5781323B2 JP5781323B2 (ja) | 2015-09-16 |
Family
ID=46672700
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011032897A Active JP5781323B2 (ja) | 2011-02-18 | 2011-02-18 | 絶縁膜の形成方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US9165818B2 (enExample) |
| EP (1) | EP2677535B1 (enExample) |
| JP (1) | JP5781323B2 (enExample) |
| KR (1) | KR101663506B1 (enExample) |
| CN (1) | CN103380487B (enExample) |
| IL (1) | IL227985B (enExample) |
| SG (1) | SG192172A1 (enExample) |
| TW (1) | TWI549187B (enExample) |
| WO (1) | WO2012111789A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5929654B2 (ja) * | 2012-09-11 | 2016-06-08 | 三菱マテリアル株式会社 | 強誘電体薄膜形成用組成物及びその薄膜の形成方法 |
| US10385234B2 (en) * | 2014-07-29 | 2019-08-20 | AZ Electronics Materials (LUXEMBOURG) S.Á.R.L. | Hybrid material for use as coating means in optoelectronic components |
| KR101715083B1 (ko) * | 2014-08-25 | 2017-03-22 | 한국화학연구원 | 폴리실라잔 화합물을 포함하는 박막 트랜지스터 게이트 절연막 및 이를 포함하는 박막 트랜지스터 |
| US10020185B2 (en) * | 2014-10-07 | 2018-07-10 | Samsung Sdi Co., Ltd. | Composition for forming silica layer, silica layer, and electronic device |
| KR101833800B1 (ko) | 2014-12-19 | 2018-03-02 | 삼성에스디아이 주식회사 | 실리카계 막 형성용 조성물, 실리카계 막의 제조방법 및 상기 실리카계 막을 포함하는 전자 소자 |
| KR101837971B1 (ko) * | 2014-12-19 | 2018-03-13 | 삼성에스디아이 주식회사 | 실리카계 막 형성용 조성물, 실리카계 막, 및 전자 디바이스 |
| KR20170014946A (ko) | 2015-07-31 | 2017-02-08 | 삼성에스디아이 주식회사 | 실리카 막 형성용 조성물, 실리카 막의 제조방법 및 실리카 막 |
| US10647578B2 (en) | 2016-12-11 | 2020-05-12 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | N—H free and SI-rich per-hydridopolysilzane compositions, their synthesis, and applications |
| TWI799516B (zh) | 2018-02-21 | 2023-04-21 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 全氫聚矽氮烷組成物和用於使用其形成氧化物膜之方法 |
| CN112635296A (zh) * | 2019-09-24 | 2021-04-09 | 长鑫存储技术有限公司 | 涂布处理方法和半导体器件 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07116406B2 (ja) * | 1986-07-08 | 1995-12-13 | 東レ株式会社 | 半導体素子のパツシベ−シヨン方法 |
| JPH03178412A (ja) | 1989-12-07 | 1991-08-02 | Mazda Motor Corp | インモールドコート方法 |
| JP3178412B2 (ja) | 1998-04-27 | 2001-06-18 | 日本電気株式会社 | トレンチ・アイソレーション構造の形成方法 |
| JP5020425B2 (ja) | 2000-04-25 | 2012-09-05 | Ａｚエレクトロニックマテリアルズ株式会社 | 微細溝をシリカ質材料で埋封する方法 |
| US6653718B2 (en) * | 2001-01-11 | 2003-11-25 | Honeywell International, Inc. | Dielectric films for narrow gap-fill applications |
| US6444495B1 (en) * | 2001-01-11 | 2002-09-03 | Honeywell International, Inc. | Dielectric films for narrow gap-fill applications |
| EP1577351A1 (en) * | 2004-03-19 | 2005-09-21 | Agfa-Gevaert | Improved ink-jet recording material |
| JP2006319161A (ja) * | 2005-05-13 | 2006-11-24 | Seiko Epson Corp | 薄膜トランジスタの製造方法、電気光学装置、及び電子機器 |
| US20080233416A1 (en) | 2007-01-26 | 2008-09-25 | Kyocera Corporation | Paste composition, green ceramic body, and methods for manufacturing ceramic structure |
| US20090061633A1 (en) * | 2007-08-31 | 2009-03-05 | Fujitsu Limited | Method of manufacturing semiconductor device |
-
2011
- 2011-02-18 JP JP2011032897A patent/JP5781323B2/ja active Active
-
2012
- 2012-02-17 US US13/984,925 patent/US9165818B2/en active Active
- 2012-02-17 EP EP12746780.1A patent/EP2677535B1/en active Active
- 2012-02-17 TW TW101105177A patent/TWI549187B/zh active
- 2012-02-17 KR KR1020137023628A patent/KR101663506B1/ko active Active
- 2012-02-17 SG SG2013057187A patent/SG192172A1/en unknown
- 2012-02-17 CN CN201280008540.3A patent/CN103380487B/zh active Active
- 2012-02-17 WO PCT/JP2012/053756 patent/WO2012111789A1/ja not_active Ceased
-
2013
- 2013-08-15 IL IL227985A patent/IL227985B/en active IP Right Grant
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2012174756A5 (enExample) | ||
| JP6892418B2 (ja) | 半導体デバイスの製造中にシリコン−ゲルマニウム／シリコン積層体からシリコン−ゲルマニウム合金に対してシリコンを選択的に除去するためのエッチング液 | |
| CN109423291B (zh) | 在制造半导体器件过程中从硅-锗/硅叠层中选择性地去除硅-锗合金的蚀刻溶液 | |
| JP2017520437A5 (enExample) | ||
| US20090289217A1 (en) | Polishing composition | |
| TWI642763B (zh) | 氮化鈦除去用液體組成物、利用該液體組成物之半導體元件之洗滌方法、及半導體元件之製造方法 | |
| TW201510180A (zh) | 用於移除金屬硬遮罩及蝕刻後殘餘物之具有Ｃｕ／Ｗ相容性的水性配方 | |
| CN102786838B (zh) | 抗蚀刻组合物及其应用 | |
| WO2007116770A1 (ja) | 化学機械研磨用水系分散体および化学機械研磨方法、ならびに化学機械研磨用水系分散体を調製するためのキット | |
| CN105739251A (zh) | 具有高wn/w蚀刻选择性的剥离组合物 | |
| JP2010153853A5 (enExample) | ||
| JP5781323B2 (ja) | 絶縁膜の形成方法 | |
| JP2014521123A5 (enExample) | ||
| JP2018510230A5 (enExample) | ||
| TW202108746A (zh) | 於製造一半導體裝置時優先p-摻雜矽及矽-鍺選擇性移除多晶矽的液態組合物 | |
| TW201539486A (zh) | 透明導電膜之修復、再生方法及透明導電積層體 | |
| MY170292A (en) | Chemical mechanical polishing composition comprising non-ionic surfactant and an aromatic compound comprising at least one acid group | |
| TW201623554A (zh) | 一種組合物在阻障層拋光中的應用 | |
| CN117616102A (zh) | 用于在半导体器件制造期间从硅-锗/硅堆叠选择性地去除硅-锗合金的蚀刻溶液 | |
| TWI660427B (zh) | 密封組成物及半導體裝置的製造方法 | |
| CN111936588A (zh) | 涂布膜形成组合物和半导体装置的制造方法 | |
| KR20110046992A (ko) | 식각액 조성물 | |
| CN103965741A (zh) | 一种用于浸渍微电机的绝缘漆 | |
| TW201204874A (en) | Etching solution composition for metal layer comprising copper and titanium | |
| KR20150019008A (ko) | 금속막 연마용 화학 기계적 연마 슬러리 조성물 및 금속막의 연마 방법 |