JP2012174394A - Electro-optic device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the problem in an organic EL device manufacturing method that, when a barrier 62 is formed with an organic material containing a fluorine compound, a residue of the organic material occurs on a pixel electrode 24, whereby hydrophilicity on the pixel electrode 24 is hindered.SOLUTION: Following steps are included: a step of forming a barrier 62 having an opening 67 in part of pixel electrodes 24 on a substrate 41 consisting of an element substrate 31 having a plurality of pixel electrodes 24 corresponding to a light-emitting element 27 formed thereon and a circuit element layer 43 having a circuit for driving the light-emitting elements 27 formed therein by using an organic material containing a fluorine compound; a step of irradiating ultraviolet light 50 from an element substrate 31 side with no barrier 62 formed on the substrate 41; a step of discharging functional fluids 61, 65 containing a material for forming a functional layer 26 into the opening 67 by an ink jet method; a step of drying the functional fluids 61, 65 to form the functional layer 26; and a step of forming a cathode 25 on the element substrate 31 so as to cover the functional layer 26.

Description

  The present invention relates to a method for manufacturing an electro-optical device having a functional film formed by using a droplet discharge method, and an electronic apparatus using the electro-optical device.

  One of the electro-optical devices described above is an organic EL (electroluminescence) device. The organic EL device has a structure in which a light emitting layer made of a light emitting material is sandwiched between an anode and a cathode. As a method for manufacturing an organic EL device, for example, as described in Patent Literature 1 and Patent Literature 2, a light emitting material is converted into ink, and ink is ejected to a light emitting region on a substrate using an ink jet method to form a light emitting layer. The process to do is included. A partition wall (bank) made of, for example, an organic material (for example, acrylic resin) is formed around the light emitting region on the substrate in order to fill a predetermined portion with ink. A pixel electrode made of ITO (Indium Tin Oxide) or the like is disposed in the opening including the light emitting region partitioned by the partition walls.

In order to appropriately dispose ink on the pixel electrode, for example, as disclosed in Patent Document 1, the pixel electrode is made lyophilic by O ₂ plasma treatment and the bank surface made of an organic material is made liquid repellent by CF ₄ plasma treatment. There is. However, if the liquid repellent treatment as described above is performed, the pixel electrode is also relatively liquid repellent, and the cross-sectional profile of the ink in the opening is not uniform, and as a result, no film is formed around the opening. A so-called film drop defect occurs.
As one means for solving the above-described problems, as disclosed in Patent Document 2, it has been studied to form a bank with an organic material containing a fluorine compound or the like in advance. If the bank is formed of such a material, it is not necessary to perform the liquid repellent treatment with CF ₄ plasma, and the pixel electrode due to the plasma treatment is not made liquid repellent.

Japanese Patent Laid-Open No. 11-329741 JP 2010-9913 A

However, organic materials containing the above-mentioned fluorine compounds are usually patterned by photolithography, but organic material residues are generated on the pixel electrodes in the pattern forming process, resulting in liquid repellency on the pixel electrodes. I found out that O ₂ plasma is effective for removing the residue on the pixel electrode, but at the same time, the liquid repellency of the bank surface is hindered, which in turn causes defects such as ink leakage.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  Application Example 1 Formed on a substrate having a substrate that transmits ultraviolet rays, and a circuit element layer having a circuit element region that includes elements for driving a plurality of electro-optic elements formed on the substrate, and the substrate. And a plurality of electro-optical elements, a functional layer including at least a light emitting layer in each of the plurality of electro-optical elements, and a partition for partitioning a functional layer corresponding to each of the electro-optical elements. A method of manufacturing an optical device, wherein the partition wall has an opening in a part of the pixel electrode made of an organic material containing a fluorine compound on the base on which a plurality of pixel electrodes corresponding to the electro-optical element are formed A step of irradiating the substrate with ultraviolet light from the substrate side, and a step of discharging a functional liquid containing a material for forming the functional layer into the opening by an ink jet method. Characterized by having a step of forming a functional layer by drying the functional liquid, and forming a cathode on the substrate so as to cover the functional layer.

According to this method, when the partition is formed of an organic material containing a fluorine compound, even if a residue of the organic material is generated on the pixel electrode, ultraviolet light is irradiated from the substrate side through which the ultraviolet light can be transmitted. Thus, ozone (O ₃ ) or radical oxygen atoms are generated in the vicinity of the surface of the pixel electrode, and the residue of the organic material can be reduced by reacting the ozone or radical oxygen with the residue. Further, since the ultraviolet light is not directly applied to the surface of the top of the partition wall, the possibility that the liquid repellency at the top of the partition wall is deteriorated is reduced.

  Application Example 2 In the electro-optical device manufacturing method according to the application example described above, the opening is formed so as not to overlap the circuit element region in plan view.

  According to this method, since the opening and the circuit element region do not overlap with each other, it is possible to prevent the opening from being irradiated with the ultraviolet light by the driving transistor, the metal wiring, or the like included in the circuit element region. .

  Application Example 3 In the method of manufacturing the electro-optical device according to the application example, the circuit element region is arranged to overlap at least the top of the partition wall in a plan view.

  According to this method, it is possible to prevent the liquid repellency at the top of the partition from being reduced by inhibiting the irradiation of the ultraviolet light at the top of the partition by the drive transistor, metal wiring, or the like included in the circuit element region. can do.

  Application Example 4 In the method of manufacturing the electro-optical device according to the application example, the partition is formed of a material containing a black matrix component that does not transmit the ultraviolet light.

  According to this method, since the partition functions like a black matrix, ultraviolet light cannot be transmitted to the top of the partition, so that the liquid repellency at the top of the partition can be prevented from being reduced.

  Application Example 5 In the method of manufacturing the electro-optical device according to the application example described above, a light blocking layer that does not transmit the ultraviolet light is provided in the circuit element layer so as to overlap the top of the partition in a plan view. It is characterized by having.

  According to this method, since the light blocking layer is arranged so as to overlap the top of the partition wall, the top of the partition wall is not irradiated with ultraviolet light, so that the liquid repellency at the top of the partition wall is reduced. You can avoid it. In addition, when the light blocking layer is made of a conductive material, it can function as an auxiliary wiring for reducing the resistance of the cathode.

  Application Example 6 In the electro-optical device manufacturing method according to the application example, the partition is formed with a thickness that does not transmit the ultraviolet light to the surface of the partition.

  According to this method, since the partition wall is formed with a thickness that does not transmit ultraviolet light to the surface of the partition wall, the irradiation intensity of the ultraviolet light at the top of the partition wall is reduced, so that the top of the partition wall The liquid repellency can be prevented from being reduced.

FIG. 3 is an equivalent circuit diagram schematically showing a configuration of an organic EL device as an electro-optical device. The schematic plan view which shows the structure of an organic electroluminescent apparatus. 1 is a schematic cross-sectional view showing the structure of an organic EL device according to a first embodiment. The schematic cross section which shows a part of manufacturing method of the organic electroluminescent apparatus in 1st Embodiment. The schematic cross section which shows a part of manufacturing method of the organic electroluminescent apparatus in 1st Embodiment. The schematic cross section which shows the structure of the organic electroluminescent apparatus in 2nd Embodiment. The schematic diagram which shows the mobile telephone as an example of the electronic device provided with the organic EL apparatus.

<Configuration of organic EL device>
FIG. 1 is an equivalent circuit diagram showing a configuration of an organic EL device as an electro-optical device. Hereinafter, the configuration of the organic EL device will be described with reference to FIG. In addition, in order to show the configuration in an easy-to-understand manner in each drawing referred to below, the layer thickness, dimensional ratio, angle and the like of each component are appropriately changed. Further, the organic EL device of the present embodiment may have a top emission structure or a bottom emission structure.

  As shown in FIG. 1, the organic EL device 11 includes a plurality of scanning lines 12, a plurality of signal lines 13 extending in a direction intersecting the scanning lines 12, and a plurality of power supply lines 14 extending in parallel to the signal lines 13. Are wired in a grid pattern. An area partitioned by the scanning line 12 and the signal line 13 is configured as a pixel area. The signal line 13 is connected to the signal line drive circuit 15. The scanning line 12 is connected to the scanning line driving circuit 16.

Each pixel region holds a switching TFT (Thin Film Transistor) 21 to which a scanning signal is supplied to the gate electrode via the scanning line 12 and a pixel signal supplied from the signal line 13 via the switching TFT 21. And a driving TFT 23 (hereinafter referred to as “TFT element 23”) to which a pixel signal held by the holding capacitor 22 is supplied to the gate electrode is provided.
Further, in each pixel region, when electrically connected to the power supply line 14 via the TFT element 23, an anode 24 as a pixel electrode into which a drive current flows from the power supply line 14, a cathode 25, and the anode 24 A functional layer 26 including a light emitting layer sandwiched between the cathode 25 and the cathode 25 is provided.

  The organic EL device 11 includes a plurality of light-emitting elements 27 as electro-optical elements configured by an anode 24, a cathode 25, and a functional layer 26. In addition, the organic EL device 11 includes a display area composed of a plurality of light emitting elements 27.

  According to this configuration, when the scanning line 12 is driven and the switching TFT 21 is turned on, the potential of the signal line 13 at that time is held in the holding capacitor 22, and the TFT element 23 depends on the state of the holding capacitor 22. ON / OFF state is determined. Then, a current flows from the power supply line 14 to the anode 24 through the channel of the TFT element 23, and further a current flows to the cathode 25 through the functional layer 26. The functional layer 26 emits light with a luminance corresponding to the amount of current flowing therethrough.

  FIG. 2 is a schematic plan view showing the configuration of the organic EL device. Hereinafter, the configuration of the organic EL device will be described with reference to FIG.

  As shown in FIG. 2, the organic EL device 11 includes a display region 32 (a region inside the one-dot chain line in the drawing) and a non-display region 33 (the one outside the one-dot chain line) on the element substrate 31 as a substrate made of glass or the like. Region). The display area 32 is provided with an actual display area 32a (area inside the two-dot chain line) and a dummy area 32b (area outside the two-dot chain line in the figure).

  In the actual display area 32a, sub-pixels 34 (light-emitting areas 42 described later) from which light is emitted are arranged in a matrix. Each of the sub-pixels 34 emits light of R (red), G (green), and B (blue) in accordance with the operation of the switching TFT 21 and the TFT element 23 (see FIG. 1). Yes.

  In the dummy area 32b, a circuit for mainly causing each sub-pixel 34 to emit light is provided. For example, the scanning line driving circuit 16 is arranged along the left side and the right side of the actual display region 32a in the drawing, and the inspection circuit 35 is arranged along the upper side of the actual display region 32a in the drawing.

  A flexible substrate 36 is provided on the lower side of the element substrate 31. The flexible substrate 36 is provided with a driving IC 37 connected to each wiring.

  FIG. 3 is a schematic cross-sectional view showing the structure of an organic EL device as an electro-optical device. Hereinafter, the structure of the organic EL device will be described with reference to FIG. FIG. 3 shows the cross-sectional positional relationship of each component and is represented on a scale that can be clearly shown.

  As shown in FIG. 3, the organic EL device 11 emits light in the light emitting region 42 (subpixel 34), and has a base 41 having an element substrate 31 and a circuit element layer 43 formed on the element substrate 31. And a light emitting element layer 44 formed on the base 41 and a cathode (common electrode) 25 formed on the light emitting element layer 44.

Examples of the element substrate 31 include a glass substrate having translucency.
In the circuit element layer 43, a base protective film 45 made of a silicon oxide film (SiO ₂ ) is formed on the element substrate 31, and the TFT element 23 is formed on the base protective film 45. Specifically, an island-shaped semiconductor film 46 made of a polysilicon film is formed on the base protective film 45. A source region 47 and a drain region 48 are formed in the semiconductor film 46 by introducing impurities. A portion where no impurity is introduced is a channel region 51. In addition, what drives the light emitting element 27 formed in the circuit element layer 43 is called a drive circuit element part.

  Further, a transparent gate insulating film 52 made of a silicon oxide film or the like covering the base protective film 45 and the semiconductor film 46 is formed in the circuit element layer 43. A gate electrode 53 (scanning line) made of aluminum (Al), molybdenum (Mo), tantalum (Ta), titanium (Ti), tungsten (W), or the like is formed on the gate insulating film 52.

A transparent first interlayer insulating film 54 and second interlayer insulating film 55 are formed on the gate insulating film 52 and the gate electrode 53. The first interlayer insulating film 54 and the second interlayer insulating film 55 are made of, for example, a silicon oxide film (SiO ₂ ). The gate electrode 53 is provided at a position corresponding to the channel region 51 of the semiconductor film 46.

The source region 47 of the semiconductor film 46 is connected to the signal line 13 formed on the first interlayer insulating film 54 through a contact hole 56 provided through the gate insulating film 52 and the first interlayer insulating film 54. Electrically connected.
On the other hand, the drain region 48 is formed on the second interlayer insulating film 55 through a contact hole 57 provided through the gate insulating film 52, the first interlayer insulating film 54, and the second interlayer insulating film 55. It is electrically connected to the anode 24.

The anode 24 is formed for each light emitting region 42, for example. The anode 24 is made of a transparent ITO (Indium Tin Oxide) film, and has, for example, a substantially rectangular shape in plan view. The anode 24 only needs to be a conductive material having translucency with respect to the wavelength of the luminescent color, and in addition to the ITO, a zinc oxide-based material, a tin oxide-based material, or the like can be used.
In the circuit element layer 43, a storage capacitor 22 and a switching TFT 21 (not shown) are formed. Further, as described above, in the circuit element layer 43, driving transistors (TFT elements 23) connected to the respective anodes 24 are formed.

  The light emitting element layer 44 includes the light emitting elements 27 arranged in a matrix as shown in FIG. 1 and is formed on the element substrate 31. Specifically, as shown in FIG. 3, the light emitting element layer 44 is mainly composed of a functional layer 26 formed on the anode 24 and a partition wall (bank) 62 that partitions the functional layer 26. The functional layer 26 includes, for example, a hole injection layer 63, a light emitting layer 64, and the like. The functional layer 26 may include a hole transport layer, an electron injection layer, an electron transport layer, and the like in addition to the hole injection layer 63 and the light emitting layer 64 depending on the case.

An insulating layer 66 is formed between the circuit element layer 43 and the partition wall 62. Examples of the insulating layer 66 include an inorganic material such as a silicon oxide film (SiO ₂ ). The insulating layer 66 is formed so as to run on the peripheral edge of the anode 24 in order to ensure insulation between the adjacent anodes 24 and to make the light emitting region 42 have a desired shape (for example, a track shape). ing.

  That is, the anode 24 and the insulating layer 66 have a structure in which they are arranged so as to partially overlap each other in plan view. In other words, the insulating layer 66 is formed in a region excluding the light emitting region 42. In other words, the insulating layer 66 serves to separate pixels together with the partition wall 62 formed of an organic material, and thus can be regarded as a part of the partition wall 62. That is, the partition wall for pixel separation can be regarded as a two-layer structure of the insulating layer 66 and the partition wall 62.

  The partition wall 62 has, for example, a trapezoidal shape having an inclined surface when viewed in cross section, and is formed so as to surround the light emitting region 42 (light emitting element 27). That is, the enclosed region is the opening 67 (67b) of the partition wall 62. Examples of the material of the partition wall 62 include heat resistance, solvent resistance, and liquid repellency such as an acrylic resin and a polyimide resin containing a fluorine-based liquid repellent as described in Japanese Patent Application Laid-Open No. 2010-9913. Organic materials having properties.

  As described above, the functional layer 26 is configured to include the hole injection layer 63 and the light emitting layer 64, and in the region surrounded by the partition wall 62, that is, in the opening 67 (the light emitting region 42), an inkjet method. Are formed in order.

  The hole injection layer 63 is composed of a conductive polymer layer containing a dopant in a conductive polymer material. Such a hole injection layer 63 can be composed of, for example, 3,4-polyethylenedioxythiophene (PEDOT-PSS) containing polystyrene sulfonic acid as a dopant.

  The light emitting layer 64 is formed on the hole injection layer 63 and is a layer of an organic light emitting material that exhibits an electroluminescence phenomenon. The cathode 25 is formed on the entire surface of the functional layer 26 and the substrate including the partition wall 62 (solid film formation).

  The cathode 25 is, for example, a laminate of calcium (Ca) and aluminum (Al). On the cathode 25, a sealing member (not shown) made of resin or the like for preventing water and oxygen from entering is laminated. The anode 24, the functional layer 26, and the cathode 25 constitute a light emitting element 27 as an electro-optical element.

  In the light emitting layer 64 described above, a voltage is applied between the anode 24 and the cathode 25, whereby holes are injected from the hole injection layer 63 and electrons are injected from the cathode 25 into the light emitting layer 64. The light emitting layer 64 emits light when they are combined. Hereinafter, a method for manufacturing an organic EL device as an electro-optical device will be described.

(First embodiment)
<Method for manufacturing organic EL device>
4 and 5 are schematic cross-sectional views illustrating a method for manufacturing an organic EL device. Hereinafter, a method for manufacturing the organic EL device will be described with reference to FIGS. 4 and 5.

As shown in FIG. 4A, a circuit element layer 43 is formed on the element substrate 31 using a known technique. Next, the anode 24 is formed on the circuit element layer 43 so as to be electrically connected to the contact hole 57 electrically connected to the drain region 48 in the circuit element layer 43.
The anode 24 is ITO, and is formed by a sputtering method or the like. A plurality of anodes 24 are formed on the matrix according to the arrangement of the sub-pixels 34 (light-emitting regions 42).

Further, an insulating layer 66 is formed around the anode 24. The insulating layer 66 is formed by, for example, an insulating film including a silicon oxide film (SiO ₂ ) so as to cover the circuit element layer 43 and the anode 24 by a CVD (Chemical Vapor Deposition) method or the like. Next, using the photolithography technique and the etching technique, an opening 67a is formed in a region corresponding to the light emitting region 42 in the insulating film, and the insulating layer 66 is completed.

FIG. 4B is a schematic cross-sectional view for forming a partition wall. In the partition formation step, the partition 62 is formed on the insulating layer 66.
First, a coating liquid of the material for the partition wall 62 is applied on the insulating layer 66 and the anode 24. Specifically, it is a coating liquid of an acrylic resin containing a fluorine compound liquid repellent whose volume of the liquid repellent is adjusted so that the contact angle of the material of the partition wall 62 with the liquid is 90 °.

  Next, the coating liquid is dried to form a partition layer. Thereafter, an opening 67b is formed in a region corresponding to the light emitting region 42 (sub-pixel 34) in the partition layer. Thereby, the shape of the partition wall 62 is completed. The partition wall 62 is formed with a thickness in the range of 1 μm to 2 μm. The partition 62 is not limited to the above range, and is formed with an appropriate thickness by optimizing the structure of the light emitting element 27.

  In this embodiment, the opening 67b is formed by a known photolithography method using an acrylic resin containing a photosensitive agent. That is, the material itself forming the partition wall 62 functions as a kind of organic resist material.

  In addition, when using the material which does not mix | blend the photosensitizer with an acrylic resin, after forming an acrylic resin in the whole board | substrate surface, apply | coating and developing an organic resist, processing an acrylic resin by a well-known etching technique, and opening part 67b can also be formed.

  Here, the acrylic resin containing the fluorine compound may remain as an extremely thin film or an island-like residue on the surface of the pixel electrode when developed. In the case of ordinary acrylic resin, if the residue is a certain amount, the acrylic resin itself does not have strong liquid repellency. Therefore, the flatness of the cross-sectional shape of the functional liquid in the functional layer forming process by the inkjet method described later is acceptable. Within the range of values. However, when there is a residue of fluorine-containing resin or the like, even if it is a very small amount of residue, the cross-sectional shape of the functional liquid is greatly disturbed, and there is a high possibility that the flatness will be outside the allowable range. In other words, it is one of the important issues to remove excess fluorine compound-containing resin adhering to the pixel electrode or the substrate surface.

FIG. 4C is a schematic cross-sectional view showing a step of irradiating ultraviolet light. As shown in the figure, the base 41 is irradiated with ultraviolet light 50 from the element substrate 31 side, that is, the side where the circuit element layer 43 is not formed, in the atmosphere using an existing ultraviolet irradiation device.
The ultraviolet light 50 has a wavelength of 185 nm or 254 nm, or both. Ultraviolet light having a wavelength of 185 nm is used to generate ozone (O ₃ ) in the air, and ultraviolet light having a wavelength of 254 nm is used to activate the generated ozone or generate radical oxygen atoms. The irradiation amount of the ultraviolet light 50 was about 1300 mJ / cm ² .

  By irradiating the ultraviolet light 50 from the element substrate 31 side as described above, ozone or radical oxygen atoms are generated in the vicinity of the surface of the anode 24 overlapping the opening 67b in plan view, and the ozone or radical oxygen is generated. Most of the residue on the anode 24 is removed by the reaction between the residue generated on the anode 24 and the like. Further, since the ultraviolet light 50 is not directly applied to the surface of the top portion 62a of the partition wall 62, the liquid repellency of the top portion 62a of the partition wall 62 due to the irradiation of the ultraviolet light 50 is not deteriorated.

  Here, the “plan view” means that the organic EL device 11 is viewed from the plane direction as shown in FIG. 2, and more specifically, for example, the partition wall 62 is formed on the cross section of the base body 41. The viewpoint when observed from the direction perpendicular to the surface. Hereinafter, the phrase “plan view” is defined as above.

  The above conditions are adjusted so that the ultraviolet light 50 does not affect the top 62a of the partition wall 62 when the partition wall 62 has a thickness of 1 μm or more. The irradiation amount of the ultraviolet light 50 can be changed depending on the thickness of the partition wall 62. That is, when the thickness of the partition wall 62 is small, the irradiation amount by the irradiation with the ultraviolet light 50 can be reduced so that the top portion 62a of the partition wall 62 is not affected.

Since the partition wall 62 is irradiated with the ultraviolet light 50 as described above to remove the residue of the anode 24 through the opening 67b, the opening 67b is flat with the circuit element formation region of the circuit element layer 43. It is desirable that they are formed so as not to overlap with each other.
Here, the circuit element formation region refers to a region in which electric wiring such as the TFT element 23 and the gate electrode 53 (scanning line 12) formed in the circuit element layer 43 is formed.

  Conversely, it is desirable that the circuit element formation region overlaps with the top 62a of the partition wall 62 in plan view. The ultraviolet light 50 to the top 62a is blocked by the circuit element formation region, so that the top 62a of the partition wall 62 can be prevented from being affected.

Note that the opening 67a is obtained by opening the insulating layer 66, and the insulating layer 66 is formed of the silicon oxide film as described above, and thus is transparent to the ultraviolet light 50. Therefore, here, since the opening 67a does not act on the ultraviolet light 50, the ultraviolet light 50 and the opening 67b are mainly described.
If the insulating layer 66 is not transparent to the ultraviolet light 50, the description of the relationship between the ultraviolet light 50 and the opening 67b is replaced with the ultraviolet light 50 and the opening 67a. Explanation is possible.

  FIG. 5A is a schematic cross-sectional view showing a functional layer forming step. A functional liquid 61 containing the material of the hole injection layer 63 is discharged to the light emitting region 42 surrounded by the insulating layer 66 and the partition wall 62 on the anode 24 by a droplet discharge method (for example, an ink jet method). Specifically, the droplet of the functional liquid 61 is discharged toward the concave portion having the anode 24 as the bottom and the insulating layer 66 and the partition wall 62 as the side wall.

  As the functional liquid 61 of the hole injection layer 63, for example, a mixture (PEDOT / PSS) in which polystyrene sulfonic acid (PSS) as a dopant is added to a polythiophene derivative such as polyethylenedioxythiophene (PEDOT) can be used. . As an example of the PEDOT-PSS dispersion, a PEDOT / PSS weight ratio of 1:10, a solid content concentration of 0.5%, a diethylene glycol content of 50%, and a remaining amount of pure water is used. be able to.

  In the functional liquid 61 of the hole injection layer 63, since the residue, which is a fluorine-containing organic material, is substantially removed from the anode 24 at the bottom, the functional liquid 61 is flattened in the recess. For this reason, a region where the functional liquid 61 does not exist is generated due to liquid repellent as in the case where a residue is present, or the cross-sectional shape of the functional liquid 61 is greatly disturbed even if the functional liquid 61 is present. Defects that cannot be controlled are reduced.

Next, the functional liquid 61 is dried to form the hole injection layer 63. Specifically, the hole injection layer 63 is formed in the opening 67 by drying or baking the functional liquid 61 in a high temperature environment to evaporate the solvent and solidify PEDOT-PSS contained in the functional liquid 61. .
As a drying condition, for example, the element substrate 31 is allowed to stand for 10 minutes in an environment of 200 ° C. The film thickness is, for example, 50 nm, and there is no region where at least the hole injection layer 63 is not formed, and the hole injection layer 63 having a substantially flat cross-sectional shape is obtained.

  Next, a functional liquid 65 containing the material of the light emitting layer 64 is discharged onto the hole injection layer 63 by a droplet discharge method. As the functional liquid 65 of the light emitting layer 64, for example, a liquid containing a red fluorescent material at a solid content concentration of 0.8% and using cyclohexylbenzene as a solvent can be used.

  Next, the functional liquid 65 is dried to form the light emitting layer 64 (see FIG. 5A). Specifically, the light emitting layer 64 is formed by drying or baking the functional liquid 65 in a high temperature environment to evaporate the solvent and solidifying, for example, a red fluorescent material contained in the functional liquid 65. As a condition for drying, for example, the element substrate 31 is left for 1 hour in an environment of 100 ° C. The film thickness of the formed light emitting layer 64 is, for example, 100 nm.

  FIG. 5B is a schematic cross-sectional view showing the cathode forming step. The cathode 25 is formed by laminating a calcium film and an aluminum film in this order, for example, by vapor deposition on almost the entire surface of the element substrate 31 on which the light emitting layer 64 is formed. The formed calcium film is, for example, 5 nm. The formed aluminum film is, for example, 300 nm.

  Thereafter, for example, an organic EL element is formed on the cathode 25 by sealing using an adhesive and a glass substrate, and as a result, the organic EL device 11 is completed.

  As described above in detail, according to the first embodiment, the following effects can be obtained.

According to the first embodiment, ozone or radical oxygen atoms are generated near the surface of the anode 24 by irradiating the ultraviolet light 50 from the surface opposite to the surface on which the partition wall 62 is formed. Most of the residue on the anode 24 is removed by the reaction between the radical oxygen and the residue generated on the anode 24 and the like.
Further, since the ultraviolet light 50 is not directly applied to the surface of the top portion 62a of the partition wall 62, the liquid repellency of the top portion 62a of the partition wall 62 due to the irradiation with the ultraviolet light 50 is not deteriorated.

  Therefore, since the functional liquid 61 is flattened in the recess, a region where the functional liquid 61 does not exist is generated due to liquid repellency, such as when a residue is present, or even if the functional liquid 61 is present, the functional liquid 61 The defect that the cross-sectional shape of 61 is greatly disturbed and the film thickness cannot be controlled is reduced.

(Second Embodiment)
FIG. 6 is a cross-sectional view showing a second embodiment of the present embodiment. The present embodiment is different from the first embodiment in that the light blocking layer 58 is provided. The light blocking layer 58 is formed in the circuit element layer 43, and is formed so as to overlap at least the top part 62 a of the partition wall 62. As a result, in the ultraviolet irradiation step described in the first embodiment (see FIG. 4C), the organic residue having liquid repellency on the anode 24 without weakening the liquid repellency of the top portion 62a of the partition wall 62. Can be removed.

In this embodiment, the light blocking layer 58 is formed of a conductive material such as aluminum (Al), molybdenum (Mo), tantalum (Ta), titanium (Ti), tungsten (W), etc., and is not displayed. In the region 33, the light blocking layer 58 is connected to the cathode 25 through the contact hole 59.
Thereby, the light blocking layer 58 can also function as an auxiliary wiring for reducing the resistance of the cathode 25. This is particularly effective when the organic EL device 11 is a top emission type and has a structure with high cathode resistance.

(Third embodiment)
<Configuration of electronic equipment>
FIG. 7 is a schematic diagram illustrating a mobile phone as an example of an electronic apparatus including the organic EL device described above. Hereinafter, a configuration of a mobile phone including the organic EL device will be described with reference to FIG.

  As shown in FIG. 7, the mobile phone 91 has a display unit 92 and operation buttons 93. The display unit 92 can perform high-quality display such that the organic EL device 11 incorporated therein can emit light uniformly. The organic EL device 11 described above is used for various electronic devices such as a mobile computer, a digital camera, a digital video camera, an in-vehicle device, an audio device, a display device such as an exposure device and a lighting device, in addition to the mobile phone 91. be able to.

As described above in detail, according to the third embodiment, the following effects can be obtained.
According to the third embodiment, since the organic EL device 11 according to the first embodiment or the second embodiment described above is provided, an electro-optically stable function can be exhibited (for example, a high-quality image). Can be formed).

In addition, embodiment is not limited above, It can also implement with the following forms.
(Modification 1)
The partition wall 62 can be formed of a material that functions as a black matrix, or can be formed of an acrylic material that includes a material that functions as a black matrix. In this case, since the partition wall 62 functions as a black matrix, the ultraviolet light 50 cannot be transmitted to the top portion 62a of the partition wall 62, so that the liquid repellency of the top portion 62a of the partition wall 62 is not reduced. be able to.

  DESCRIPTION OF SYMBOLS 11 ... Organic EL device, 12 ... Scanning line, 13 ... Signal line, 14 ... Power supply line, 15 ... Signal line drive circuit, 16 ... Scanning line drive circuit, 21 ... Switching TFT, 22 ... Retention capacitor, 23 ... Drive TFT (TFT element), 24 ... Anode as pixel electrode, 25 ... Cathode, 26 ... Functional layer, 27 ... Light emitting element, 31 ... Element substrate as substrate, 32 ... Display region, 33 ... Non-display region, 34 ... Sub Pixel, 35 ... Inspection circuit, 36 ... Flexible substrate, 37 ... Driving IC, 41 ... Base, 42 ... Light emitting region, 43 ... Circuit element layer, 44 ... Light emitting element layer, 45 ... Base protective film, 46 ... Semiconductor film, 47 ... Source region, 48 ... Drain region, 50 ... Ultraviolet light, 51 ... Channel region, 52 ... Gate insulating film, 53 ... Gate electrode, 54 ... First interlayer insulating film, 55 ... Second interlayer insulating film, 56, 57 59 ... 58, an auxiliary electrode as a light blocking layer, 61, 65, a functional liquid, 62, 62a, a top of a partition, 63, a hole injection layer, 64, a light emitting layer, 66, an insulating layer, 67, an opening, 91: A mobile phone as an electronic device.

Claims (6)

A base having a substrate that transmits ultraviolet light; a circuit element layer having a circuit element region that includes elements for driving a plurality of electro-optical elements formed on the substrate; and the plurality formed on the base Electro-optical element, a functional layer including at least a light-emitting layer in each of the plurality of electro-optical elements, and a partition wall for partitioning a functional layer corresponding to each of the electro-optical elements Because
Forming the partition wall having an opening in a part of the pixel electrode with an organic material containing a fluorine compound on the base on which a plurality of pixel electrodes corresponding to the electro-optic element are formed;
Irradiating the substrate with ultraviolet light from the substrate side;
A step of discharging a functional liquid containing a material for forming the functional layer into the opening by a droplet discharge method;
Drying the functional liquid to form a functional layer;
Forming a cathode on the substrate so as to cover the functional layer;
A method for manufacturing an electro-optical device. A method of manufacturing the electro-optical device according to claim 1,
The electro-optical device manufacturing method, wherein the opening is formed so as not to overlap the circuit element region in a plan view. A method for manufacturing the electro-optical device according to claim 1, wherein:
The method of manufacturing an electro-optical device, wherein the circuit element region is disposed so as to overlap at least the top of the partition wall in plan view. An electro-optical device manufacturing method according to claim 1,
The method of manufacturing an electro-optical device, wherein the partition wall is formed of a material containing a black matrix component that does not transmit the ultraviolet light. A method for manufacturing an electro-optical device according to any one of claims 2 to 4,
A method for manufacturing an electro-optical device, comprising: a light blocking layer that does not transmit the ultraviolet light in the circuit element layer so as to overlap with a top of the partition in a plan view. An electro-optical device manufacturing method according to claim 1,
The method of manufacturing an electro-optical device, wherein the partition wall is formed with a thickness that does not transmit the ultraviolet light to the surface of the partition wall.

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