JP2012022785A - Electro-optical device, method of manufacturing the same, and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electro-optical device with variations in a thickness of a functional film restrained, a method of manufacturing the electro-optical device, and an electronic apparatus.SOLUTION: An organic EL device 11 as an electro-optical device, includes: a functional layer 26 containing a luminous layer 64 arranged between an anode 24 as a first electrode and a cathode 25 as a second electrode both of which are on a substrate 31; a bank 62 as a barrier rib for partitioning the functional layer 26 into a luminous region 42; and a reflection film 61 disposed below the anode 24. In the bank 62, there is provided an opening hole 65 which surrounds the luminous region 42. A peripheral portion 62a of the bank 62 which is on a peripheral of the opening hole 65 is formed to be higher than other portions of the bank 62 relative to the substrate 31 and is provided with a liquid-repellent material 66 which has a liquid-repellent feature.

Description

  The present invention relates to an electro-optical device, a method for manufacturing the electro-optical device, and an electronic apparatus.

  As one of the electro-optical devices, for example, there is an organic EL (electroluminescence) device having a structure in which an organic film such as a light emitting layer is sandwiched between an anode and a cathode. As a method for manufacturing the organic EL device, banks (partition walls) are formed so as to surround an anode provided on a substrate. Next, a liquid phase method for forming the organic film by applying and solidifying a functional liquid containing an organic film forming material into the opening hole (light emitting region) surrounded by the bank using an inkjet method or the like. Are known. In such a liquid phase method, when the functional liquid is applied to the opening hole, the functional liquid may overflow from the opening hole to the outside.

Therefore, for example, as disclosed in Patent Document 1, a method is disclosed in which plasma treatment with a fluorine-based treatment gas such as CF ₄ is performed on the surface of the bank to make the surface of the bank liquid repellent with respect to the functional liquid. ing. As a result, the contact angle of the functional liquid with respect to the bank becomes larger than before the plasma treatment, and the functional liquid does not easily overflow from the opening hole. However, since the surface of the anode formed in the opening hole surrounded by the bank is also liquid repellent, the functional liquid does not wet and spread on the anode, resulting in poor filling of the functional liquid. As a result, when the formed organic film has a defect or a cathode is formed on the organic film, problems such as an electrical short (short circuit) between the anode and the cathode at the defective portion occur.

  Therefore, as described in Patent Document 2 and Patent Document 3, a method is disclosed in which a liquid repellent material is transferred to a bank provided on a substrate, and only the upper surface of the bank is made liquid repellent.

JP 2002-334882 A JP 2002-305077 A Japanese Patent No. 3879425

  However, in the liquid repellency methods disclosed in Patent Documents 2 and 3 above, due to unevenness on the substrate on which the bank is formed, the bank is located more than the peripheral edge of the opening hole of the bank where the functional liquid is desired to stay. In other cases, the height of the other region becomes high, and the liquid repellent material may be transferred to that portion. Thereby, the peripheral part of the opening hole was not made liquid-repellent, but the subject that a functional liquid overflowed from the opening hole occurred.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  Application Example 1 An electro-optical device according to this application example includes a functional layer including a light emitting layer disposed between a first electrode and a second electrode on a substrate, and a partition that partitions the functional layer into a light emitting region. And a reflective film provided on the lower side of the first electrode, wherein the partition wall portion is provided with an opening hole surrounding the light emitting region, and the partition wall portion The peripheral edge of the opening hole is formed with a height higher on the substrate than that of the other region of the partition wall, and has liquid repellency.

  According to this configuration, since the liquid repellency is imparted to the peripheral portion of the opening hole formed higher than the height of other regions in the partition wall portion, when the functional material is applied in the opening hole The functional material can be prevented from overflowing from the opening hole to the outside. Further, since the portion to which the liquid repellency is imparted is the peripheral portion of the opening hole, the functional material can be spread and spread in the opening hole, and a sufficient amount of the functional material can be filled. As a result, a functional layer in which variations in film thickness are suppressed in the light emitting region can be obtained. That is, it is possible to provide a top emission type electro-optical device with little emission unevenness.

  Application Example 2 In the electro-optical device according to the application example described above, at least one of a wiring and a drive circuit is provided on the substrate, and the opening hole overlaps the reflection film in a plan view. The height of the reflective film on the substrate is preferably higher than the height of the wiring and the drive circuit.

  According to this configuration, since the height of the reflective film is formed higher than the height of the wiring and the drive circuit, when the aperture hole is provided in the partition wall so as to overlap the reflective film in plan view, the aperture hole The height of the peripheral edge can be made higher than the height of other regions.

  Application Example 3 In the electro-optical device according to the application example described above, at least one of a wiring and a drive circuit is provided on the substrate, and the insulating film, the reflective film, and the first electrode are seen in a plan view. The opening holes are provided so as to overlap the reflective film in a plan view, and the height of the reflective film on the substrate is compared with the height of the wiring or the drive circuit. It is preferable that the height is high.

  According to this configuration, the thickness of the upper surface of the reflection film is adjusted to be higher than the height of the wiring and the drive circuit by adjusting the film thickness of the insulating film and the reflection film. The height can be higher than other areas. Therefore, it can be adjusted and formed relatively easily as compared with the case where the height is adjusted only by the reflective film. Further, the cost of materials and the like can be suppressed.

  Application Example 4 In the electro-optical device according to the application example described above, at least one of a wiring and a drive circuit is provided on the substrate, and the reflection film, the insulating film, and the first electrode are seen in a plan view. The opening holes are provided so as to overlap the insulating film in a plan view, and the height of the insulating film on the substrate is compared with the height of the wiring and the driving circuit. It is preferable that the height is high.

  According to this configuration, the thickness of the reflective film and the insulating film is adjusted to form the height of the upper surface of the reflective film higher than the height of the wiring and the drive circuit. The height may be higher than other regions.

  Application Example 5 In the electro-optical device according to the application example, it is preferable that the reflective film is provided on a region including a region that overlaps at least a part of the drive circuit in a plan view.

  According to this configuration, since the reflective film is also provided on the drive circuit, the aperture ratio can be improved.

  Application Example 6 In the electro-optical device according to the application example described above, the reflective film has the top surface of the reflective film approximately equal over the entire reflective film so that the height of the upper surface of the reflective film is substantially the same. It is preferable that the thickness of the reflective film is changed.

  According to this configuration, since the height of the reflective film in the region including the drive circuit is substantially equal, the upper surface of the partition wall on the reflective film can be flattened, and the periphery of the opening hole in the partition wall A liquid repellent material can be reliably provided in the part.

  Application Example 7 In the electro-optical device according to the application example, it is preferable that the partition wall is made of an organic material.

  According to this configuration, since the partition wall is made of an organic material, the partition wall can be formed relatively easily by a coating method or the like.

  Application Example 8 In the electro-optical device according to the application example described above, the opening hole is provided so as to overlap the first electrode in a plan view, and between the partition wall portion and the first electrode in a plan view. It is preferable that a lower partition wall made of an inorganic material is provided so as to cover at least a part of the peripheral edge of the first electrode.

  According to this configuration, since the lower layer partition wall made of an inorganic material is provided, the wettability in the opening hole can be ensured. Further, the lower partition wall portion can hide the peripheral portion of the opening hole in which the film thickness of the light emitting layer is more likely to fluctuate than the central portion of the opening hole, and light emission unevenness in the light emitting region can be suppressed.

  Application Example 9 In the electro-optical device according to the application example described above, it is preferable that the peripheral portion of the opening hole is made liquid-repellent using a transfer method.

  According to this configuration, since the liquid repellent material is transferred to a high portion of the partition wall, only the peripheral portion of the opening hole can be made liquid repellent without reducing the wettability of the surface of the first electrode.

  Application Example 10 An electro-optical device manufacturing method according to this application example includes a functional layer including a light emitting layer disposed between a first electrode and a second electrode on a substrate, and a lower side of the first electrode. A reflective film provided on the substrate, wherein the reflective film is formed on a region including a light emitting region on the substrate, and the reflective film is formed on the reflective film. A first electrode forming step of forming one electrode, an opening hole overlapping with the first electrode in plan view, and a height of a peripheral portion of the opening hole to be higher than a height of another region; A partition wall forming step for forming a partition wall, a transfer step for transferring a liquid repellent material to the partition wall using a transfer method, and a coating step for applying a functional material in the opening hole. Features.

  According to this method, the height of the partition wall at the peripheral edge of the opening hole is formed higher than that of the other regions of the partition wall. The liquid repellent material can be more selectively transferred to the peripheral portion. Therefore, when the functional material is applied in the opening hole, the functional material can be prevented from overflowing from the opening hole to the outside. Further, since the portion to which liquid repellency (liquid repellent material) is imparted is the peripheral portion of the opening hole, it is possible to spread the functional material into the opening hole, and a sufficient amount of the functional material can be filled. . As a result, a functional layer with less film thickness unevenness can be formed, and a top emission type electro-optical device with less light emission unevenness can be manufactured with high yield.

  Application Example 11 In the method of manufacturing an electro-optical device according to the application example, the method includes a wiring circuit forming step of forming at least one of a wiring and a driving circuit on the substrate, and the reflection film forming step includes It is preferable that the height of the reflective film is higher than that of the wiring and the drive circuit.

  According to this method, since the height of the upper surface of the reflective film is formed higher than the height of the wiring and the drive circuit, when the partition portion is formed so as to partially overlap the reflective film, The height of the peripheral edge portion of the opening hole can be made higher than the height of other regions. Therefore, the liquid repellent material can be easily transferred to the peripheral portion.

  Application Example 12 In the electro-optical device manufacturing method according to the application example described above, the method includes an insulating film forming step of forming an insulating film in a region where the reflective film is provided on the substrate before the reflective film forming step. It is preferable.

  According to this method, since the height of the upper surface of the reflective film is adjusted using the insulating film, it can be adjusted and formed relatively easily as compared with the case where the height is adjusted only with the reflective film. . Further, the cost of materials and the like can be suppressed.

  Application Example 13 In the method of manufacturing an electro-optical device according to the application example described above, an insulating film forming step of forming an insulating film in a region where the reflective film is provided on the substrate is provided after the reflective film forming step. In the first electrode forming step, the first electrode is preferably formed on the insulating layer.

  According to this method, since the height of the upper surface of the first electrode is adjusted using the insulating film, it is relatively easy compared to the case where the height of the upper surface of the first electrode is adjusted only by the reflective film. Can be adjusted and formed. Further, the cost of materials and the like can be suppressed.

  Application Example 14 In the electro-optical device manufacturing method according to the application example, in the reflective film forming step, the reflective film is formed on a region including a region that overlaps at least a part of the drive circuit in plan view. It is preferable.

  According to this method, since the reflective film is also formed on the drive circuit, the aperture ratio can be improved.

  Application Example 15 In the method of manufacturing the electro-optical device according to the application example, the reflective film forming step may be performed so that a height of an upper surface of the reflective film is substantially equal over the entire reflective film. It is preferable to form the reflective film by changing the thickness on the drive circuit.

  According to this method, since the thickness of the reflective film is partially changed so that the height of the upper surface of the reflective film is substantially the same, the upper surface of the partition wall on the reflective film can be flattened. The liquid repellent material can be reliably transferred to the peripheral edge of the opening hole in the partition wall.

  Application Example 16 In the method of manufacturing the electro-optical device according to the application example, it is preferable that the partition wall forming step forms the partition wall using an organic material.

  According to this method, since the partition wall is made of an organic material, the partition wall can be formed relatively easily by a coating method or the like.

  Application Example 17 In the method of manufacturing the electro-optical device according to the application example, the partition wall forming step forms a lower partition wall portion made of an inorganic material on the first electrode so as to surround the light emitting region. Preferably, the method includes a forming step and an upper partition wall forming step of forming an upper partition wall that covers at least a part of the lower partition wall and forms the opening hole.

  According to this method, since the lower layer partition wall is formed so as to surround the first electrode in a plan view (so as to overlap with the surrounding area), it is possible to ensure wettability in the opening hole surrounded by the lower layer partition wall. it can. Further, the lower partition wall portion can hide the peripheral portion of the opening hole in which the film thickness of the light emitting layer is more likely to fluctuate than the central portion of the opening hole, and light emission unevenness in the light emitting region can be suppressed.

  [Application Example 18] An electronic apparatus according to this application example includes the electro-optical device described above.

  According to this configuration, a functional material having a uniform film thickness can be obtained in the light emitting region, and an electronic device capable of improving display quality can be provided.

FIG. 3 is an equivalent circuit diagram illustrating an electrical configuration of the organic EL device as the electro-optical device of the first embodiment. The schematic plan view which shows the structure of an organic electroluminescent apparatus. (A) is a schematic top view which shows the structure of the sub pixel of an organic electroluminescent apparatus, (b) is a schematic cross section of the sub pixel which follows the AA 'line of (a). Process drawing which shows the manufacturing method of an organic electroluminescent apparatus. The schematic cross section which shows a one part process among the manufacturing methods of an organic electroluminescent apparatus. The schematic cross section which shows a one part process among the manufacturing methods of an organic electroluminescent apparatus. The schematic cross section which shows a one part process among the manufacturing methods of an organic electroluminescent apparatus. The model perspective view which shows a television as an example of the electronic device provided with the organic EL apparatus. (A) is a schematic plan view which shows the structure of the sub pixel of the organic electroluminescent apparatus of 2nd Embodiment, (b) is a schematic cross section of the sub pixel which follows the BB 'line | wire of (a). (A) is a schematic plan view which shows the structure of the sub pixel of the organic electroluminescent apparatus of 3rd Embodiment, (b) is a schematic cross section of the sub pixel which follows the CC 'line | wire of (a). (A) is a schematic plan view which shows the structure of the sub pixel of the organic electroluminescent apparatus of 4th Embodiment, (b) is a schematic cross section of the sub pixel which follows the DD 'line of (a). The schematic plan view which shows the structure of the sub pixel of the organic electroluminescent apparatus of a modification. FIG. 13 is a schematic cross-sectional view of a subpixel along the line EE ′ in FIG. 12.

(First embodiment)
<Configuration of electro-optical device>
FIG. 1 is an equivalent circuit diagram showing an electrical configuration of an organic EL device as an electro-optical device. Hereinafter, the configuration of the organic EL device will be described with reference to FIG. In addition, in order to show the configuration in an easy-to-understand manner in each drawing referred to below, the layer thickness, dimensional ratio, angle and the like of each component are appropriately changed. Further, the organic EL device of the present embodiment can be applied to a top emission structure.

  As shown in FIG. 1, the organic EL device 11 includes a plurality of scanning lines 12, a plurality of signal lines 13 extending in a direction intersecting the scanning lines 12, and a plurality of power supply lines 14 extending in parallel to the signal lines 13. And. An area partitioned by the scanning line 12 and the signal line 13 is configured as a pixel area. The signal line 13 is connected to the signal line drive circuit 15. The scanning line 12 is connected to the scanning line driving circuit 16.

  Each pixel region holds a switching TFT (Thin Film Transistor) 21 to which a scanning signal is supplied to the gate electrode via the scanning line 12 and a pixel signal supplied from the signal line 13 via the switching TFT 21. A storage capacitor 22 is provided, and a driving TFT 23 (hereinafter referred to as “TFT element 23”) to which a pixel signal held by the storage capacitor 22 is supplied to the gate electrode is provided. Further, in each pixel region, when electrically connected to the power supply line 14 via the TFT element 23, an anode 24 as a first electrode into which a drive current flows from the power supply line 14, and a cathode 25 as a second electrode. And a functional layer 26 sandwiched between the anode 24 and the cathode 25.

  The organic EL device 11 includes a plurality of light emitting elements 27 including an anode 24, a cathode 25, and a functional layer 26. In addition, the organic EL device 11 includes a display area composed of a plurality of light emitting elements 27.

  According to this configuration, when the scanning line 12 is driven and the switching TFT 21 is turned on, the potential of the signal line 13 at that time is held in the holding capacitor 22, and the TFT element 23 depends on the state of the holding capacitor 22. ON / OFF state is determined. Then, a current flows from the power supply line 14 to the anode 24 through the channel of the TFT element 23, and further a current flows to the cathode 25 through the functional layer 26. The functional layer 26 emits light with a luminance corresponding to the amount of current flowing therethrough.

  FIG. 2 is a schematic plan view showing the configuration of the organic EL device. Hereinafter, the configuration of the organic EL device will be described with reference to FIG.

  As shown in FIG. 2, the organic EL device 11 includes a display region 32 (a region inside a one-dot chain line in the drawing) and a non-display region 33 (a region outside a one-dot chain line) on a substrate 31 made of glass or the like. It has become. The display area 32 is provided with an actual display area 32a (area inside the two-dot chain line) and a dummy area 32b (area outside the two-dot chain line in the figure).

  In the actual display area 32a, sub-pixels 34 (light emitting areas) from which light is emitted are arranged in a matrix. Each of the sub-pixels 34 emits light of R (red), G (green), and B (blue) in accordance with the operation of the switching TFT 21 and the TFT element 23 (see FIG. 1). .

  In the dummy area 32b, a circuit for mainly causing each sub-pixel 34 to emit light is provided. For example, the scanning line driving circuit 16 is disposed along the left side and the right side of the actual display region 32a in the drawing, and the inspection circuit 35 is disposed along the upper side of the actual display region 32a in the drawing.

  A flexible substrate 36 is provided on the lower side of the substrate 31. The flexible substrate 36 is provided with a driving IC 37 connected to each wiring.

  FIG. 3A is a schematic plan view showing the structure of a sub-pixel of the organic EL device. FIG. 3B is a schematic cross-sectional view of the sub-pixel along the line AA ′ in FIG. Hereinafter, the configuration of an organic EL device including sub-pixels will be described with reference to FIG. In FIG. 3A, the functional layer 26, a bank 62 as a partition wall to be described later, the cathode 25, and the like are omitted.

  As shown in FIG. 3A, the organic EL device 11 emits light in a light emitting region (subpixel 34) that is planarly surrounded by the scanning line 12, the signal line 13, and the power supply line 14. And includes a switching TFT 21, a storage capacitor 22, a TFT element 23, and an anode 24.

  Specifically, as illustrated in FIG. 3B, the organic EL device 11 includes a substrate 31, a circuit element layer 43 formed on the substrate 31, and a light emitting element layer formed on the circuit element layer 43. 44. An example of the substrate 31 is a glass substrate.

In the circuit element layer 43, a base protective film 45 made of a silicon oxide film (SiO ₂ ) is formed on the substrate 31, and the TFT element 23 is formed on the base protective film 45. Specifically, an island-shaped semiconductor film 46 made of a polysilicon film is formed on the base protective film 45. A source region 47 and a drain region 48 are formed in the semiconductor film 46 by introducing impurities. A portion where no impurity is introduced is a channel region 51.

  Further, a transparent gate insulating film 52 made of a silicon oxide film or the like that covers the base protective film 45 and the semiconductor film 46 is formed in the circuit element layer 43. On the gate insulating film 52, a gate electrode 53 (scanning line) made of a low resistance metal wiring material such as aluminum (Al), molybdenum (Mo), tantalum (Ta), titanium (Ti), tungsten (W) is formed. Has been.

A first interlayer insulating film 54 and a second interlayer insulating film 55 are formed on the gate insulating film 52 and the gate electrode 53. The first interlayer insulating film 54 and the second interlayer insulating film 55 are composed of, for example, a silicon oxide film (SiO ₂ ), a titanium oxide film (TiO ₂ ), or the like. The gate electrode 53 is provided at a position corresponding to the channel region 51 of the semiconductor film 46.

  A reflective film 61 is provided on the second interlayer insulating film 55 and its periphery including the light emitting region 42. The reflective film 61 is made of, for example, aluminum (Al). The reflective film 61 reflects light emitted from the functional layer 26 toward the cathode 25 side. The material of the reflective film 61 is not limited to aluminum, and any material having a function of reflecting light emission (reflecting surface) may be used.

  The height of the reflective film 61 is formed so as to be higher than the height of the second interlayer insulating film 55 around it. Specifically, the reflective film 61 is formed such that the height of the upper surface of the reflective film 61 is higher than the wiring (12, 14) provided outside the light emitting region 42 and the raised portion due to the thickness of the TFT element 23. Yes. The shape of the reflective film 61 is, for example, formed in a track shape having a straight line part and an arc part in plan view.

  An anode 24 is provided on the reflective film 61. The anode 24 is formed for each light emitting region 42, for example. The anode 24 is made of a transparent ITO (Indium Tin Oxide) film, and is formed in a track shape having a straight line portion and an arc portion in plan view (see FIG. 3A).

  The source region 47 of the semiconductor film 46 is electrically connected to the power supply line 14 formed on the first interlayer insulating film 54 through a contact hole 56 provided through the gate insulating film 52 and the first interlayer insulating film 54. Connected. On the other hand, the drain region 48 is connected to the anode 24 formed on the reflective film 61 through a contact hole 57 provided through the gate insulating film 52, the first interlayer insulating film 54, and the second interlayer insulating film 55. Electrically connected.

  In the circuit element layer 43, the storage capacitor 22 and the switching TFT 21 (see FIG. 3A) are formed. Further, the thickness of the wiring (scanning line 12, signal line 13, power supply line 14, etc.) is, for example, 0.4 μm. The thickness of the TFT element 23 is, for example, 0.4 μm.

  The light emitting element layer 44 includes the light emitting elements 27 (see FIG. 1) arranged in a matrix and is formed on the substrate 31. More specifically, the light emitting element layer 44 is mainly composed of a functional layer 26 formed on the anode 24 and a bank 62 that partitions the functional layer 26. The functional layer 26 includes, for example, a hole injection layer 63, a light emitting layer 64, and the like.

  The bank 62 is provided on the entire substrate 31 except for the light emitting region 42. The material of the bank 62 is, for example, an organic material such as acrylic resin or polyimide resin. The bank 62 has, for example, a substantially trapezoidal shape having an inclined surface when viewed in cross section, and is formed so as to surround the light emitting region 42 (light emitting element 27). That is, the area surrounded by the bank 62 becomes the opening hole 65.

  In addition, since the bank 62 is provided with the reflective film 61 that is higher than the height of the second interlayer insulating film 55 on the lower side of the anode 24, the height of the peripheral edge 62a of the opening hole 65 is higher than that of the other region. It is higher than

  A liquid repellent material 66 is provided at the peripheral edge 62 a of the opening hole 65 in the bank 62 so that the functional liquid as the functional material for the functional layer 26 does not overflow from the opening hole 65. Specifically, by providing the liquid repellent material 66 using a transfer method, liquid repellency can be imparted to the peripheral edge 62a of the opening hole 65 located at a higher position than other regions. As a result, the functional liquid applied in the opening hole 65 can be retained in the opening hole 65, and the functional liquid can be prevented from flowing out to the adjacent opening hole 65. The liquid repellent material 66 is, for example, a fluorine resin.

  Here, “high liquid repellency” refers to a relatively large contact angle with a liquid (functional liquid). In other words, it can be said that the liquid is less likely to overflow to the outside from the peripheral edge 62a of the opening hole 65 having improved liquid repellency. On the other hand, “low liquid repellency” means that the contact angle with the liquid is relatively small. That is, since the liquid repellency is imparted to the peripheral edge 62a of the opening hole 65 to which the liquid (functional liquid) is applied, the liquid (functional liquid) is unlikely to overflow from the opening hole 65, and the liquid ( It can be said that the functional liquid is easier to fill.

  As described above, the functional layer 26 is configured to include the hole injection layer 63 and the light emitting layer 64, and an ink jet method is used in a region surrounded by the bank 62, that is, in the opening hole 65. It is formed in order.

  The hole injection layer 63 is composed of a conductive polymer layer containing a dopant in a conductive polymer material. Such a hole injection layer 63 can be composed of, for example, 3,4-polyethylenedioxythiophene (PEDOT-PSS) containing polystyrene sulfonic acid as a dopant.

  The light emitting layer 64 is formed on the hole injection layer 63 and is a layer of an organic light emitting material that exhibits an electroluminescence phenomenon. The cathode 25 is formed on the entire surface of the substrate 31 including the functional layer 26 and the bank 62 (solid film formation).

  The cathode 25 is, for example, a laminate of calcium (Ca) and aluminum (Al). On the cathode 25, a sealing member (not shown) made of an inorganic material, an organic resin, or the like for preventing intrusion of water or oxygen is laminated.

  In the light emitting layer 64 described above, a voltage is applied between the anode 24 and the cathode 25, whereby holes are injected from the hole injection layer 63 and electrons are injected from the cathode 25 into the light emitting layer 64. The light emitting layer 64 emits light when they are combined. The organic EL device 11 as described above has a so-called top emission structure. A light is emitted from the functional layer 26 by passing a driving current between the anode 24 and the cathode 25 and reflected by the reflective film 61 to be reflected by the cathode 25. Take out from the side. Hereinafter, a method for forming the organic EL device 11 using the inkjet method will be described.

<Method of manufacturing electro-optical device>
FIG. 4 is a process diagram showing a method for manufacturing an organic EL device as a method for manufacturing an electro-optical device. 5 to 7 are schematic cross-sectional views illustrating some steps in the method of manufacturing the organic EL device. Hereinafter, a method for manufacturing the organic EL device will be described with reference to FIGS. 5-7, illustration of the circuit element layer 43 etc. is abbreviate | omitted.

  First, in step S11 (wiring circuit forming step), the circuit element layer 43 is formed on the substrate 31 using a known film forming technique. Specifically, the TFT element 23, the scanning line 12, the signal line 13, and the like are formed on the substrate 31. The surface of the second interlayer insulating film 55 is uneven as affected by the thickness of the TFT element 23 and the wirings (12, 13, 14) (see FIG. 3B).

  In step S <b> 12 (reflection film forming step), the reflection film 61 is formed on and around the light emitting region 42 on the second interlayer insulating film 55. The reflection film 61 is made of aluminum or the like as described above, and can be formed using, for example, a CVD (Chemical Vapor Deposition) method. The shape of the reflective film 61 is a track shape having a straight line portion and an arc portion in plan view. The thickness of the reflective film 61 is, for example, 0.5 μm.

  In step S <b> 13 (first electrode formation step), the anode 24 made of ITO is formed on the reflective film 61. Specifically, it is formed into a shape along the shape of the reflective film 61, that is, a track shape having a straight line portion and an arc portion in plan view.

  In step S14 (partition wall forming step), a bank 62 is formed in a region on the substrate 31 excluding the light emitting region. As a method for forming the bank 62, first, an organic material such as polyimide or acrylic is applied on the substrate 31. Next, the organic material is dried to form an organic layer. Next, the portion of the light emitting region 42 in the organic layer is removed. Thereby, the bank 62 is completed.

  As shown in FIG. 5, the peripheral edge 62 a of the opening hole 65 in the bank 62 is higher than the height of other regions because the reflective film 61 is formed on the lower side of the anode 24. The bank 62 has a thickness of 2 μm, for example. Since the bank 62 is formed using the organic material described above, the bank 62 can be formed relatively easily as compared with the case where an inorganic material is used.

  In step S15 (transfer process), the liquid repellent material 66 is transferred to the bank 62 using a transfer method. Specifically, the liquid repellent material 66 can be reliably transferred to the high portion of the upper surface of the bank 62, that is, the peripheral edge 62 a of the opening hole 65.

  The transfer method is performed, for example, by a transfer device 71 shown in FIG. The transfer device 71 includes a transport belt 72 and a transport roller 73 for transporting the substrate 11a at a stage before becoming the organic EL device 11, and a supply roller 75 for transporting the film 74 with a liquid repellent material coated with the liquid repellent material 66. A tension roller 76, a transfer roller 77, and a pressure roller 78 are provided.

  The film 74 with a liquid repellent material is, for example, a film of PET (polyethylene terephthalate) coated with a fluorine-based resin (liquid repellent material).

  The substrate 11 a is placed on the transport belt 72 and is transported in a predetermined direction by a plurality of transport rollers 73 and a pressure roller 78. The film 74 with liquid repellent material is supplied from a supply roller 75, and the conveying direction is defined by a tension roller 76. The liquid repellent material 66 of the film 74 with liquid repellent material is a portion where the transfer roller 77 is moved to the pressure roller 78 side so that the film 74 with liquid repellent material and the substrate 11a are pressure-bonded (for example, thermocompression bonding). The liquid repellent material 66 is transferred to the substrate 11a.

  In the bank 62, the relationship between the height of the portion where the liquid repellent material 66 is to be provided (the peripheral portion 62a of the opening hole 65) and the height of other portions (above the wirings 13, 14 and the TFT element 23) is as follows. The peripheral edge 62a does not necessarily have to be high. Specifically, it may be in a range of steps that can be transferred by pressure bonding between the transfer roller 77 and the pressure roller 78. For example, in the bank 62, the liquid repellent material 66 can be transferred over the entire upper surface of the bank 62 if the height difference between the peripheral edge 62a and the other portion is within ± 0.1 μm. .

  In this case, as shown in FIG. 7A, the peripheral edge 62 a of the opening hole 65 in the bank 62 is about 0.4 μm higher than the other area of the bank 62, corresponding to the film thickness of the reflective film 61. Therefore, the liquid repellent material 66 can be reliably transferred to the peripheral edge 62a.

  In step S16 (application process), the functional liquid 26a is discharged into the opening hole 65 of the bank 62 as shown in FIG. Specifically, the droplets of the functional liquid 26a are discharged toward a recess having the anode 24 as a bottom and the bank 62 as a side wall using a droplet discharge method (for example, an ink jet method). Examples of the functional liquid include a functional liquid containing a material for the hole injection layer 63 and a functional liquid 26 a containing a material for the light emitting layer 64. Hereinafter, the light emitting layer 64 will be described as an example.

  In step S17, as shown in FIG.7 (c), the functional liquid 26a is dried and the light emitting layer 64 is formed. Specifically, the functional liquid 26a is dried in a high-temperature environment or under reduced pressure to evaporate the solvent and solidify. Thereby, the light emitting layer 64 is formed in the opening hole 65.

  As described above, since the liquid repellency is reliably imparted to the peripheral edge portion 62 a of the opening hole 65 in the bank 62, it is possible to prevent the functional liquid 26 a from overflowing to the outside of the opening hole 65.

  In step S18, the cathode 25 (see FIG. 3B) is formed by laminating a calcium film and an aluminum film in this order, for example, by vapor deposition on substantially the entire surface of the substrate 31 on which the light emitting layer 64 is formed. .

  In step S19, the organic EL device 11 is completed by sealing on the cathode 25 using, for example, an adhesive and a glass substrate.

<Configuration of electronic equipment>
FIG. 8 is a schematic perspective view showing a television as an example of an electronic apparatus provided with the above-described organic EL device. Hereinafter, the configuration of a television provided with an organic EL device will be described with reference to FIG.

  As shown in FIG. 8, the television 81 includes a display unit 82, a frame unit 83, a leg unit 84, and a remote controller 85. The display unit 82 can perform high-quality display such that the organic EL device 11 incorporated therein can emit light uniformly. The above-described organic EL device 11 can be used for various electronic devices such as a display, a mobile computer, a digital camera, a digital video camera, an in-vehicle device, an audio device, a lighting device, and a light source of an optical printer, in addition to the television. .

  As described above in detail, according to the first embodiment, the following effects can be obtained.

  (1) The organic EL device 11 and the manufacturing method thereof according to the first embodiment are formed such that the height of the upper surface of the reflective film 61 is higher than the height of the wiring (13, 14) or the TFT element 23. Since the anode 24 is formed on the reflective film 61 and the bank 62 having the opening hole 65 is formed thereon so as to overlap the anode 24 in plan view, the height of the peripheral edge 62a of the opening hole 65 is set to the height of the bank 62. It can be made higher than the height of other regions. Therefore, the liquid repellent material 66 can be selectively transferred to the peripheral edge portion 62a by using the transfer method, and when the functional liquid 26a is applied into the opening hole 65, the functional liquid is transferred from the opening hole 65 to the outside. 26a can be prevented from overflowing. Thereby, color mixing can be prevented. In addition, since the portion to which the liquid repellent material 66 is transferred is the peripheral edge 62a of the opening hole 65, the functional liquid 26a can be spread and spread into the opening hole 65 without reducing the wettability of the surface of the anode 24. It becomes possible and can be filled with a sufficient amount of the functional liquid 26a. As a result, the functional layer 26 with little film thickness unevenness can be formed, and light emission unevenness can be reduced.

  (2) Since the electronic apparatus of the first embodiment includes the organic EL device 11 described above, the electronic device capable of improving the display quality by obtaining the functional layer 26 having a uniform thickness in the light emitting region 42. Equipment can be provided.

(Second Embodiment)
<Structure of electro-optical device>
FIG. 9A is a schematic plan view illustrating a pixel structure of an organic EL device as an electro-optical device according to the second embodiment. FIG. 9B is a schematic cross-sectional view of the sub-pixel along the line BB ′ in FIG. Hereinafter, the configuration of an organic EL device including sub-pixels will be described with reference to FIGS. 9 (a) and 9 (b).

  In the organic EL device 111 shown in FIG. 9A, the functional layer 26, the bank 62, the cathode 25, and the like are not shown in the same manner as in the first embodiment. Further, in the organic EL device 111 of the second embodiment, a portion where not only the reflective film 161 but also the lower insulating film 191 as an insulating film is provided between the anode 24 and the second interlayer insulating film 55. Different from one embodiment. Hereinafter, the same components as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted or simplified here.

  As shown in FIG. 9A, the organic EL device 111 includes a light emitting region 42 (sub-surface) surrounded by the signal line 13, the scanning line 12, and the power supply line 14 in the same manner as in the first embodiment. The pixel 34) emits light, and includes a switching TFT 21, a storage capacitor 22, a TFT element 23, and an anode 24.

  More specifically, as shown in FIG. 9B, the organic EL device 111 according to the second embodiment has the height of the upper surface of the reflective film 161 around the light emitting region 42 on the second interlayer insulating film 55 and the periphery thereof. A lower insulating film 191 is provided to make it higher than the peripheral height. On the lower insulating film 191, a reflective film 161 for taking out light emitted from the functional layer 26 from the cathode 25 side is provided. That is, by providing the lower insulating film 191 under the reflective film 161, the thickness of the reflective film 161 can be reduced, and the height of the upper surface of the reflective film 161 is made higher than the surrounding height. Can do.

  An anode 24 is provided on the reflective film 161. A bank 62 is provided on the anode 24 and the second interlayer insulating film 55 so as to surround the light emitting region 42. A portion surrounded by the bank 62 is an opening hole 65.

  As in the first embodiment, a liquid repellent material 66 is provided on the peripheral edge 62 a of the opening hole 65 of the bank 62. Thus, since the lower insulating film 191 is provided on the lower side of the reflective film 161, the thickness of the reflective film 161 can be made thinner than that of the reflective film 61 of the first embodiment, and the reflective film 161 is relatively easy. Can be formed. Further, the cost of materials and the like can be suppressed. Hereinafter, a method for forming the organic EL device 111 of the second embodiment will be described. In addition, a description will be mainly given of different portions as compared with the manufacturing method of the organic EL device 11 of the first embodiment.

<Method of manufacturing electro-optical device>
The manufacturing method of the organic EL device 111 of the second embodiment is basically the same as the manufacturing method of the organic EL device 11 of the first embodiment shown in FIG. explain.

In step S11, a lower insulating film 191 is formed on and around the light emitting region 42 on the second interlayer insulating film 55 (insulating film forming step). As a method for forming the lower insulating film 191, for example, a silicon oxide film (SiO ₂ ) is formed on a region including the light emitting region 42 on the second interlayer insulating film 55 by using a known film forming technique, photolithography technique and etching technique. Form a film. Specifically, as shown in FIG. 9A, a track shape having a straight line portion and an arc portion in plan view is formed.

  In step S <b> 12, the reflective film 161 is formed on the lower insulating film 191. Specifically, a reflective film 161 made of aluminum or the like is formed on the lower insulating film 191 using, for example, a mask. The reflective film 161 is formed in a shape along the lower insulating film 191, that is, a track shape having a straight line portion and an arc portion in plan view. Thereafter, similarly to the first embodiment, steps S13 to S19 are performed to complete the organic EL device 111 of the second embodiment.

  As described above in detail, according to the second embodiment, in addition to the effects (1) and (2) of the first embodiment described above, the following effects can be obtained.

  (3) According to the second embodiment, since the lower insulating film 191 is formed higher than the wirings (13, 14) and the TFT elements 23, the lower insulating film 191 and the lower insulating film 191 are planar. When the bank 62 is provided so as to partially overlap, the height of the peripheral edge 62a of the opening hole 65 can be made higher than the height of other regions. In addition, it is possible to adjust the height of the upper surface of the reflective film 161 using the lower insulating film 191, and it is relatively easy to adjust and form compared to the case where the height is adjusted using only the reflective film 161. Can do. Further, the cost of materials and the like can be suppressed.

(Third embodiment)
<Structure of electro-optical device>
FIG. 10A is a schematic plan view showing the structure of a sub-pixel of the organic EL device as the electro-optical device of the third embodiment. FIG. 10B is a schematic cross-sectional view of the sub-pixel along the line CC ′ in FIG. Hereinafter, the configuration of an organic EL device including sub-pixels will be described with reference to FIGS. 10 (a) and 10 (b).

  In the organic EL device 211 shown in FIG. 10A, the functional layer 26, the bank 262, the cathode 25, and the like are not shown, as in the above-described embodiment. Further, the organic EL device 211 of the third embodiment is different from that of the first embodiment in that the reflective film 261 and the anode 224 are provided up to a region overlapping with a part of the TFT element 23 in plan view. Hereinafter, the same components as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted or simplified here.

  As shown in FIG. 10A, the organic EL device 211 of the third embodiment is planarized by the signal line 13, the scanning line 12, and the power supply line 14, as in the first and second embodiments. Light emission is performed in a light emitting region 242 (subpixel 34) surrounded by a structure, and includes a switching TFT 21, a storage capacitor 22, a TFT element 23, and an anode 224.

  More specifically, as shown in FIG. 10A, the organic EL device 211 of the third embodiment is an abbreviation of a region surrounded by each wiring (signal line 13, scanning line 12, power supply line 14) in plan view. A reflective film 261 and an anode 224 are formed throughout. That is, the reflective film 261 and the anode 224 are formed so as to overlap with a part of the switching TFT 21, the storage capacitor 22, the TFT element 23 and the like in plan view. As shown in FIG. 10A, the reflective film 261 has a track shape having a straight line portion and an arc portion in plan view.

  As described above, since the reflective film 261 and the anode 224 are provided over substantially the entire area of the sub-pixel 34, the aperture ratio can be improved, and the load on the TFT element 23 and the like can be reduced. Can do.

  Further, as shown in FIG. 10B, the thickness of the reflective film 261 is partially changed according to the undulation of the surface of the second interlayer insulating film 55 so that the entire upper surface of the reflective film 261 becomes substantially flat. Yes. Thereby, the upper surface of the anode 224 formed on the reflective film 261 can be substantially flattened, and further, the upper surface of the bank 262 formed on the anode 224 can be flattened. Therefore, the liquid repellent material 66 can be reliably provided on the upper surface (peripheral portion 262a) of the bank 262.

  Hereinafter, a method for forming the organic EL device 211 of the third embodiment will be described. In addition, a description will be mainly given of different portions as compared with the manufacturing method of the organic EL device 11 of the first embodiment.

<Method of manufacturing electro-optical device>
The manufacturing method of the organic EL device 211 of the third embodiment is formed in the same manner as in the first embodiment until step S11 shown in FIG. The manufacturing method after step S12 will be described.

  In step S <b> 12, the reflective film 261 is formed on the second interlayer insulating film 55. Specifically, as shown in FIG. 10A, the reflective film 261 is formed so as to include a region where a part of the region of the TFT element 23 overlaps in plan view. The shape of the reflective film 261 is, for example, a track shape having a straight line portion and an arc portion in plan view. Further, the reflective film 261 is selectively formed using, for example, a mask so that the upper surface of the reflective film 261 becomes substantially flat over the entire reflective film 261.

  As described above, since the reflective film 261 is formed on the TFT element 23 or the like, the height of the upper surface of the reflective film 261 can be formed higher than the height of other regions.

  In step S <b> 13, the anode 224 is formed on the reflective film 261. As a method for forming the anode 224, for example, the anode 224 is selectively formed on the reflective film 261 using a mask. The shape of the anode 224 is a shape along the shape of the reflective film 261, that is, a track shape having a straight line portion and an arc portion in plan view. Further, since the upper surface of the reflective film 261 is substantially flattened, the upper surface of the anode 224 formed thereon is also substantially flattened.

  In step S <b> 14, a bank 262 is formed on the anode 224 and the second interlayer insulating film 55. Specifically, the bank 262 is formed in a region excluding the light emitting region 242 on the anode 224 and the second interlayer insulating film 55. The bank 262 is formed of an organic material such as polyimide as in the above-described embodiment. The shape of the opening hole 65 of the bank 262 is a shape along the shape of the anode 224, that is, a track shape having a straight line portion and an arc portion in plan view, as in the above-described embodiment.

  In step S12, since the reflective film 261 having a flattened upper surface is formed in a region including a region overlapping with a part of the TFT element 23 in plan view, the peripheral portion 262a of the opening hole 65 in the bank 262 It is formed higher than the height of the bank 262. Thereafter, similarly to the first embodiment, by performing steps S15 to S19, the organic EL device 211 of the third embodiment is completed.

  As described above in detail, according to the third embodiment, the following effects can be obtained in addition to the effects (1) to (2) of the first embodiment described above.

  (4) According to the third embodiment, since the reflective film 261 is also provided on the area overlapping the TFT element 23 in a plane, the aperture ratio can be improved, and the TFT element 23 and the like are applied. The electrical load can be reduced. Further, since the reflective film 261 is partially changed in thickness so that the height of the reflective film 261 in the region including the TFT element 23 is substantially equal over the entire reflective film 261, The upper surface of the bank 262 can be flattened, and the liquid repellent material 66 can be reliably formed in the bank 262.

(Fourth embodiment)
<Structure of electro-optical device>
FIG. 11A is a schematic plan view showing the structure of subpixels of an organic EL device as an electro-optical device according to the fourth embodiment. FIG. 11B is a schematic cross-sectional view of the sub-pixel along the line DD ′ in FIG. Hereinafter, the configuration of the organic EL device including the sub-pixel will be described with reference to FIGS. 11 (a) and 11 (b).

  In the organic EL device 311 shown in FIG. 11A, the functional layer 26, the bank 362, the cathode 25, and the like are not shown, as in the above embodiment. Moreover, the organic EL device 311 of the fourth embodiment is provided with an insulating film 301 between the anode 324 and the reflective film 361, and the thickness H of the insulating film 301 is set for each light emitting region 342 of each color (R, G, B). In other words, the part where the optical resonance structure that makes the distance between the reflective film 361 and the cathode 25 different is adopted is different from the first embodiment. Hereinafter, the same components as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted or simplified here.

  As shown in FIG. 11A, the organic EL device 311 according to the fourth embodiment is planarized by the signal lines 13, the scanning lines 12, and the power supply lines 14 as in the first to third embodiments. Light emission is performed in a light emitting region 342 (subpixel 34) surrounded by a structure, and includes a switching TFT 21, a storage capacitor 22, a TFT element 23, and an anode 324.

  More specifically, in the organic EL device 311 of the fourth embodiment, as shown in FIG. 11B, a reflective film 361 is formed around the light emitting region 342 on the second interlayer insulating film 55. . The shape of the reflective film 361 is, for example, a track shape having a straight line portion and an arc portion in plan view, as in the above embodiment. The reflective film 361 is formed of a material having light reflectivity. Examples of the material include aluminum and silver, or an alloy mainly composed of aluminum or silver.

  On the reflective film 361, the height of the anode 324 in the light emitting region 342 and its periphery is made higher than that of other regions, and an insulating film for adjusting the distance between the reflective film 361 and the cathode 25 301 is provided. The planar shape of the insulating film 301 is a track shape having a straight line portion and an arc portion as in the case of the reflective film 361 described above.

  Each light emitting element 27 is an element that generates light having a wavelength corresponding to any of a plurality of colors (red, green, and blue). In the present embodiment, the light emitting element (27R) emits red light, the light emitting element (27G) emits green light, and the light emitting element (27B) emits blue light.

  As described above, the organic EL device 311 of the present embodiment has a top emission structure in which light generated in each light emitting element 27 travels toward the side opposite to the substrate 31. Therefore, an opaque plate material such as a ceramic or metal sheet can be used as the substrate 31 in addition to a light transmissive plate material such as glass.

<Method of manufacturing electro-optical device>
The manufacturing method of the organic EL device 311 of the fourth embodiment is formed in the same manner as in the first embodiment until step S11 shown in FIG. The manufacturing method after step S12 will be described.

  In step S <b> 12, a reflective film 361 is formed on the second interlayer insulating film 55. Specifically, the reflective film 361 is formed so as to be slightly larger than the light emitting region 342 in plan (for example, a track shape). As a method of forming the reflective film 361, for example, the reflective film 361 is selectively formed on the second interlayer insulating film 55 using a mask.

  Next, the insulating film 301 is formed over the reflective film 361. The shape of the insulating film is substantially the same as that of the reflective film 361. The insulating film 301 is formed selectively on the reflective film 361 using a mask in the same manner as the reflective film 361 described above. Note that the thickness H of the insulating film 301 is changed for each light emitting region 342 of each color (R, G, B) so as to have an optical resonance structure. Further, the thickness H of the insulating film 301 is formed so as to be higher than the height of the surrounding second interlayer insulating film 55.

  In step S <b> 13, the anode 324 is formed on the insulating film 301. As a method for forming the anode 324, for example, a film is selectively formed on the insulating film 301 using a mask. The shape of the anode 324 is, for example, a shape along the shape of the insulating film 301, that is, a track shape having a straight line portion and an arc portion in plan view.

  In step S <b> 14, a bank 362 is formed on the anode 324 and the second interlayer insulating film 55. Specifically, the bank 362 is formed in a region excluding the light emitting region 342 on the anode 324 and the second interlayer insulating film 55. The bank 362 is formed of an organic material such as polyimide as in the above-described embodiment. The shape of the opening hole 65 of the bank 362 is a shape along the shape of the anode 324, that is, a track shape having a straight line portion and an arc portion in plan view, as in the above-described embodiment.

  Since the insulating film 301 is formed after step S12, the peripheral edge portion 362a of the opening hole 65 in the bank 362 is formed higher than the height of the bank 362 in other regions. Thereafter, similarly to the first embodiment, the organic EL device 311 of the fourth embodiment is completed by performing steps S15 to S19.

  As described above in detail, according to the fourth embodiment, the following effects can be obtained in addition to the effects (1) and (2) of the first embodiment and the third embodiment described above.

  (5) According to the fourth embodiment, the insulating film 301 is provided between the anode 324 and the reflective film 361, and the thickness of the insulating film 301 is changed for each light emitting region 342 of each color (R, G, B), Since the distance between the reflection film 361 and the cathode 25 is different, an optical resonance structure can be formed, light of a specific wavelength can be strengthened, and color development (wavelength dependence) can be improved. it can.

  In addition, embodiment is not limited above, It can also implement with the following forms.

(Modification 1)
As described above, it is not limited to providing the reflective film 61 so that the bank around the light emitting region 42 is raised for each light emitting region 42, and as shown in FIGS. 12 and 13, the adjacent light emitting regions 442 are not provided. A reflective film 401 may be provided so as to straddle. Specifically, the reflective film 401 is provided in a rail shape so that the straight line portion in the light emitting region 442 extends over the adjacent subpixels 34. Further, as described above, the reflective film 401 is provided to be higher than the height of the second interlayer insulating film 55.

  FIG. 12 is a schematic plan view showing the structure of the sub-pixel of the organic EL device. FIG. 13 is a schematic cross-sectional view of the sub-pixel along the line EE ′ of FIG. Note that the organic EL device 411 shown in FIGS. 12 and 13 does not show the functional layer 26, the cathode 25, and the like.

  Thus, when the anode 24 and the bank 462 are formed on the reflective film 401 by forming the reflective film 401 as shown in FIG. 12 on the substrate 31, the linear portion of the light emitting region 442 in the bank 462 is changed. A common bank having a shape connected to adjacent sub-pixels 34 can be formed. In this manner, partitioning the light emitting area includes not only partitioning one light emitting area 42 but also partitioning a plurality of light emitting areas 442. Therefore, the height of the straight portion of the light emitting region 442 in the bank 462 can be made higher than the height of other regions, and the liquid repellent material 66 can be transferred to this portion. As a result, the thickness of the functional layer 26 can be made uniform in the adjacent light emitting region 442.

(Modification 2)
As described above, the bank 62 is not limited to being configured with one layer, and may be configured with two layers, for example. Specifically, a lower layer bank made of an inorganic material is provided below the bank 62. The shape of the lower layer bank is a track shape having a straight line portion and an arc portion in plan view, like the upper layer bank 62. As a material of the lower layer bank, for example, an inorganic material such as a silicon oxide film (SiO 2) or a silicon nitride film (SiN) is used.

  Since the lower layer bank is formed of an inorganic material, the wettability of the portion along the inner wall of the opening hole 65 of the bank 62 can be ensured. Further, by providing the end portion of the opening hole 65 of the lower layer bank so as to protrude inward from the end portion of the opening hole 65 of the bank 62, the film thickness of the light emitting layer 64 is more likely to vary than the central portion of the opening hole 65. The peripheral edge portion of the opening hole 65 can be hidden, and uneven light emission in the light emitting region 42 can be suppressed.

(Modification 3)
The organic EL device 211 of the third embodiment described above uses only the reflective film 261 in order to increase the height of the peripheral edge portion 262a of the opening hole 65 in the bank 262 as compared with other regions of the bank 262. Instead of being formed higher than the height of the TFT element 23 and the like, an insulating film is provided on the lower side of the reflective film 261 so as to increase the height of the upper surface of the reflective film 261 as in the second embodiment. May be. This makes it possible to form the film relatively easily as compared with the case where the reflective film 261 alone is used, and to reduce the cost of materials and the like. Moreover, in each embodiment, you may make it apply the optical resonance structure like 4th Embodiment.

(Modification 4)
As described above, the shape of the light emitting region 42 (opening hole 65) in plan view is not limited to the track shape, and may be, for example, a square shape, a round shape, or a polygonal shape.

(Modification 5)
As described above, the anode 24 is not limited to being formed slightly smaller than the outer periphery of the reflective film 61 in plan view. For example, the anode 24 and the reflective film 61 may be formed to have the same size. Good. Further, the anode 24 may be formed so as to cover the side surface of the reflective film 61.

(Modification 6)
As described above, the TFT element 23 and the like are not limited to being arranged at the end of the sub-pixel 34 in plan view, and the arrangement position is not limited as long as it is below the anode 24 and the reflective film 61 because of the top emission structure. .

(Modification 7)
As described above, the reflective film 61 is not limited to be formed in a planar manner for each light emitting region 42, and may be formed across, for example, adjacent subpixels 34 or a plurality of subpixels 34. Good.

(Modification 8)
As in the third embodiment described above, the thickness of the reflective film 261 is partially changed to flatten the surface of the substrate 31. For example, for preventing light emission unevenness due to a voltage drop of the organic EL device 211. An auxiliary wiring may be formed under the bank 262 (on the second interlayer insulating film 55) to relieve unevenness of the wiring (12, 13), the TFT element 23, and the like. Further, an auxiliary wiring may be formed under the anode 224 and used as a reflective film and also as an auxiliary wiring.

(Modification 9)
As described above, the organic EL device 11 is not limited to the one having the light emitting element 27 capable of emitting red (R), green (G), and blue (B) light. For example, the present invention may be applied to a lighting device capable of emitting monochromatic light such as white. Alternatively, the light emitting element 27 may have a top emission structure that emits white light and may include a color filter above the light emitting element 27.

(Modification 10)
In the above-described embodiment, the structure of the bank 62 in the organic EL device 11 has been described as an example. However, the present invention is not limited to this, and may be applied to a bank structure that partitions color filters such as a liquid crystal device.

  DESCRIPTION OF SYMBOLS 11, 111, 211, 311 ... Organic electroluminescent apparatus as an electro-optical device, 12 ... Scan line, 13 ... Signal line, 14 ... Power supply line, 15 ... Signal line drive circuit, 16 ... Scan line drive circuit, 21 ... For switching TFT, 22 ... holding capacity, 23 ... TFT element, 24, 224, 324 ... anode as first electrode, 25 ... cathode as second electrode, 26 ... functional layer, 26a ... functional liquid as functional material, 27 ... Light emitting element, 31 ... substrate, 32 ... display area, 32a ... actual display area, 32b ... dummy area, 33 ... non-display area, 34 ... sub-pixel, 35 ... inspection circuit, 36 ... flexible substrate, 37 ... driving IC, 42, 242, 342 ... light emitting region, 43 ... circuit element layer, 44 ... light emitting element layer, 45 ... base protective film, 46 ... semiconductor film, 47 ... source region, 48 ... drain region, 51 ... channel region, 2 ... gate insulating film, 53 ... gate electrode, 54 ... first interlayer insulating film, 55 ... second interlayer insulating film, 56 ... contact hole, 57 ... contact hole, 61, 161, 261, 361 ... reflective film, 62, 262, 362 ... banks as partition walls, 62a, 262a, 362a ... peripheral edge, 63 ... hole injection layer, 64 ... light emitting layer, 65 ... opening hole, 66 ... liquid repellent material, 71 ... transfer device, 72 ... transport Belt, 73 ... Conveying roller, 74 ... Film with liquid repellent material, 75 ... Supply roller, 76 ... Tension roller, 77 ... Transfer roller, 78 ... Pressure roller, 81 ... TV, 82 ... Display part, 83 ... Frame part, 84 ... Legs, 85 ... Remote control, 191 ... Lower insulating film as an insulating film, 301 ... Insulating film, 362 ... Bank as an upper partition wall.

Claims (18)

A functional layer including a light emitting layer disposed between the first electrode and the second electrode on the substrate, a partition wall partitioning the functional layer into a light emitting region, and a reflection provided below the first electrode An electro-optical device comprising a film,
The partition wall is provided with an opening hole surrounding the light emitting region,
The peripheral portion of the opening hole in the partition wall portion is formed to have a higher height on the substrate than other regions of the partition wall portion and has liquid repellency. . The electro-optical device according to claim 1,
On the substrate, at least one of a wiring and a drive circuit is provided,
The opening hole is provided so as to overlap the reflective film in a plan view,
The electro-optical device is characterized in that a height of the reflective film on the substrate is higher than a height of the wiring and the driving circuit. The electro-optical device according to claim 1,
On the substrate, at least one of a wiring and a drive circuit is provided, and the insulating film, the reflective film, and the first electrode are sequentially provided so as to overlap in a plan view,
The opening hole is provided so as to overlap the reflective film in a plan view,
The electro-optical device is characterized in that a height of the reflective film on the substrate is higher than a height of the wiring or the driving circuit. The electro-optical device according to claim 1,
On the substrate, at least one of a wiring and a drive circuit is provided, and the reflective film, the insulating film, and the first electrode are sequentially provided so as to overlap in a plan view,
The opening hole is provided so as to overlap the insulating film in a plan view,
The electro-optical device is characterized in that a height of the insulating film on the substrate is higher than a height of the wiring and the driving circuit. The electro-optical device according to any one of claims 2 to 4,
The electro-optical device, wherein the reflective film is provided on a region including a region that overlaps at least a part of the drive circuit in a plan view. The electro-optical device according to claim 5,
The electric thickness of the reflective film on the drive circuit is changed so that the height of the upper surface of the reflective film is substantially the same over the entire reflective film. Optical device. The electro-optical device according to any one of claims 1 to 6,
The partition is made of an organic material. The electro-optical device according to any one of claims 1 to 7,
The opening hole is provided so as to overlap the first electrode in plan view,
An electro-optic, wherein a lower partition wall portion made of an inorganic material is provided between the partition wall portion and the first electrode so as to cover at least a part of a peripheral edge portion of the first electrode in a plan view. apparatus. The electro-optical device according to any one of claims 1 to 8,
An electro-optical device, wherein a peripheral portion of the opening hole is made liquid-repellent using a transfer method. A method of manufacturing an electro-optical device, comprising: a functional layer including a light emitting layer disposed between a first electrode and a second electrode on a substrate; and a reflective film provided below the first electrode. There,
A reflective film forming step of forming the reflective film in a region including a light emitting region on the substrate;
A first electrode forming step of forming the first electrode on the reflective film;
Forming an opening hole overlapping the first electrode in plan view, and forming a partition wall part so that the height of the peripheral edge of the opening hole is higher than the height of other regions; and
A transfer step of transferring a liquid repellent material to the partition using a transfer method;
An application step of applying a functional material into the opening hole;
A method for manufacturing an electro-optical device. The method of manufacturing an electro-optical device according to claim 10,
A wiring circuit forming step of forming at least one of a wiring and a driving circuit on the substrate;
In the reflective film forming step, the height of the reflective film on the substrate is formed higher than the height of the wiring and the drive circuit. A method for manufacturing the electro-optical device according to claim 10 or 11,
An electro-optical device manufacturing method comprising: an insulating film forming step of forming an insulating film in a region on the substrate where the reflective film is provided before the reflective film forming step. A method for manufacturing the electro-optical device according to claim 10 or 11,
After the reflective film forming step, an insulating film forming step of forming an insulating film in a region where the reflective film is provided on the substrate,
The method of manufacturing an electro-optical device, wherein the first electrode forming step forms the first electrode on the insulating layer. A method for manufacturing an electro-optical device according to any one of claims 10 to 13,
The method of manufacturing an electro-optical device, wherein the reflecting film forming step forms the reflecting film on a region including a region overlapping with at least a part of the driving circuit in a plan view. 15. The method of manufacturing the electro-optical device according to claim 14,
In the reflective film forming step, the reflective film is formed by changing the thickness on the drive circuit so that the height of the upper surface of the reflective film is substantially equal over the entire reflective film. A method for manufacturing an electro-optical device. A method for manufacturing an electro-optical device according to any one of claims 10 to 15,
In the partition wall forming step, the partition wall is formed using an organic material. A method for manufacturing an electro-optical device according to any one of claims 10 to 16,
The barrier rib forming step includes forming a lower barrier rib portion formed of an inorganic material on the first electrode so as to surround the light emitting region, and covering the at least part of the lower barrier rib portion with the opening. An upper partition wall forming step for forming an upper partition wall forming the hole, and a method for manufacturing the electro-optical device.   An electronic apparatus comprising the electro-optical device according to any one of claims 1 to 9.

Images