JP2010176938A - Electrooptical device, method of manufacturing the same, and electronic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electrooptical device with variations in thickness of functional film resrained, a method of manufacturing the electrooptical device, and an electronic apparatus. <P>SOLUTION: The electrooptical device (organic EL device 11) includes luminous elements formed on an element substrate, and barrier ribs 62 partitioning the luminous elements and having a first region 62a and a second region 62b with different heights. At least one membrane constituting the luminous element is formed with a liquid process. A laminate film 69 for relatively differentiating a liquid-repellant property between the first region 62a and the second region 62b is transferred on a region with a larger height out of the first region 62a and the second region 62b. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an electro-optical device having a functional film formed using a droplet discharge method, a method for manufacturing the electro-optical device, and an electronic apparatus.

  One of the electro-optical devices described above is an organic EL (electroluminescence) device. The organic EL device has a structure in which a light emitting layer made of a light emitting material is sandwiched between an anode and a cathode. As a method for manufacturing an organic EL device, for example, as described in Patent Literature 1 and Patent Literature 2, a light emitting material is converted into ink, and ink is ejected to a light emitting region on a substrate using an ink jet method to form a light emitting layer. The process to do is included. A partition wall (bank) made of, for example, an organic material (for example, acrylic resin) is formed around the light emitting region on the substrate in order to fill a predetermined portion with ink.

  The opening including the light emitting region partitioned by the partition wall has, for example, a track shape having a long side and a short side. The inside of the arc formed on the short side has a problem that ink wettability is poor and ink is difficult to fill. On the other hand, there is a problem that ink tends to overflow on the long side. As a result, the thickness of the ink ejected to the opening varies, and as a result, there is a problem that uniform light emission cannot be obtained.

  Therefore, for example, as described in Patent Document 3, an inorganic material (for example, a silicon oxide film) for facilitating filling of the openings partitioned by the partition walls with a part of the organic material partition walls is partially provided. A method is known in which the film is exposed to improve the wettability of the ink and the film thickness in the opening is made uniform.

JP 2001-185354 A WO01 / 074 specification JP 2003-187970 A

  However, when the light emitting area in the organic EL device becomes high definition, the curvature of the arc increases, and the ink in the arc portion tends to recede particularly during the drying process. As a result, it becomes difficult to fill the ink, and further, if more ink is replenished to ensure the film thickness, there is a problem that the ink tends to overflow on the long side. That is, since there is a difference in the contact angle with respect to the ink on the long side and the short side, the ink thickness in the opening varies, the light emitting layer is formed unevenly, and the light can be emitted uniformly. There is a problem that there is no variation (the emission characteristics vary).

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  [Application Example 1] An electro-optical device according to this application example includes an electro-optical element provided on a substrate, a partition wall that partitions the electro-optical element and includes first and second regions having different heights. And at least one film constituting the electro-optic element is formed using a liquid process, and the first region and the first region are formed in a region having a higher height between the first region and the second region. A liquid repellency control film that makes the liquid repellency different from that of the two regions is transferred.

  According to this configuration, since the liquid repellency control film is transferred to the higher one of the first region and the second region, the liquid filling property in the first region and the second region of the partition wall. The liquid repellency of the portion where the liquid is bad can be lowered, and the liquid repellency of the portion where the liquid tends to overflow can be increased. Therefore, it is possible to fill the openings evenly with the partition walls, and to provide an organic EL device having an electro-optic element that can obtain a substantially uniform film thickness over the entire opening.

  Application Example 2 In the electro-optical device according to the application example, the region surrounded by the partition wall is an opening having a long side and a short side, and the first region is the long side region. Preferably, the second region includes the short side region, and the liquid repellency of the first region is relatively higher than the liquid repellency of the second region.

  According to this configuration, since the liquid repellency of the first region is higher than that of the second region in the partition wall, the liquid can be prevented from overflowing from the periphery of the first region including the long side of the opening. On the other hand, since the liquid repellent property of the second region is lower than that of the first region, it is possible to adjust the liquid to the second region, and the liquid is applied to the second region including the short side that is difficult to fill with liquid in the opening. Can be filled.

  Application Example 3 In the electro-optical device according to the application example described above, it is preferable that the high region is provided by using a thickness of a drive circuit element unit for driving the electro-optical element.

  According to this configuration, since the high region is provided by using the thickness of the drive circuit element portion (for example, TFT element or wiring), a new process for forming the high region is not provided. May be.

  Application Example 4 In the electro-optical device according to the application example, it is preferable that the high region is formed based on a film formed in a desired region on the substrate.

  According to this configuration, since a high region is provided based on a film formed in a desired region, a new manufacturing process is required as compared with a method using a TFT element or wiring. Thus, it is possible to reliably form regions having different heights in desired regions.

  Application Example 5 In the electro-optical device according to the application example, it is preferable that the high region is provided based on a resist patterning layer.

  According to this configuration, since the high region is formed based on the resist patterning layer used in the manufacturing process, it is not necessary to increase the manufacturing process for newly providing a high region.

  Application Example 6 In the method of manufacturing the electro-optical device according to this application example, a partition including a first region and a second region having different heights is formed on the substrate to partition the region where the electro-optical element is formed. Transferring a liquid repellency control film for relatively different liquid repellency between the first area and the second area to a high area of the first area and the second area; And a step of discharging a liquid having electro-optical properties to the opening surrounded by the partition wall.

  According to this method, the first region and the second region are made different in height, and the liquid repellency control film is transferred to the higher region, so that the liquid repellency is different between the first region and the second region. It becomes possible to make it. Thereby, in the 1st area | region and 2nd area | region of a partition, the liquid repellency of the part with poor liquid filling property can be made low, and the liquid repellency of the part which a liquid tends to overflow can be made high. Therefore, it becomes possible to fill the entire inside of the opening defined by the partition wall with a substantially uniform film thickness over the entire opening.

  Application Example 7 In the method of manufacturing the electro-optical device according to the application example, the opening has a long side and a short side, and the step of forming the partition includes the region of the long side. The step of forming the first region, forming the second region so as to include the short side region, and transferring the liquid repellency control film is performed by comparing the first region with the second region. In particular, it is preferable to transfer the liquid repellency control film to the first region so that the liquid repellency of the liquid becomes high.

  According to this method, since the first region including the long side region in the opening has higher liquid repellency than the second region including the short side region, the first region from the long side of the opening to the outside of the opening. The liquid can be prevented from overflowing. On the other hand, since the liquid repellency of the second region is low, it becomes possible to adjust the liquid to the short side of the opening, and the liquid can be filled. Therefore, a uniform film thickness can be formed in the opening.

  Application Example 8 In the electro-optical device manufacturing method according to the application example described above, the electro-optical element may be provided in any one of the first region and the second region before the step of forming the partition wall. It is preferable to form a drive circuit element portion for driving the.

  According to this method, since the high region is provided by using the thickness of the drive circuit element unit (for example, TFT element or wiring), it is not necessary to provide a new process for forming the high region. .

  Application Example 9 In the method of manufacturing the electro-optical device according to the application example, a film is formed in one of the first region and the second region before the step of forming the partition wall. It is preferable.

  According to this method, since a high region is provided by utilizing the thickness of a newly formed film, a new manufacturing process is required as compared with a method using a TFT element or a wiring. In addition, regions having different heights can be formed in desired regions.

  Application Example 10 In the method of manufacturing the electro-optical device according to the application example described above, the partition is formed in one of the first region and the second region before the step of forming the partition. It is preferable to leave at least a part of the resist patterning layer formed up to the forming step.

  According to this method, since the high region is formed based on the resist patterning layer used in the manufacturing process, it is not necessary to increase the manufacturing process for newly providing the high region.

  Application Example 11 In the electro-optical device manufacturing method according to the application example described above, it is preferable that the partition wall is subjected to a lyophilic treatment before the step of transferring the liquid repellency control film.

  According to this method, since the lyophilic process is performed before the liquid repellency control film is transferred, the entire partition wall can be made lyophilic, and thereafter, the liquid repellency control film is transferred only to a high area. The liquid repellency can be increased. Therefore, the liquid repellency of the area where the liquid is filled can be lowered (made lyophilic), and the liquid repellency of the area where the liquid tends to overflow can be increased.

  Application Example 12 In the method of manufacturing an electro-optical device according to the application example, it is preferable that the lyophilic process is a plasma process.

  According to this method, since the lyophobic control film is transferred to a necessary area after being lyophilic by plasma treatment, it is made lyophilic as compared with the method of performing plasma treatment after lyophobic treatment. It can be prevented that the lyophilicity of the region is reduced. Therefore, it is possible to distinguish between a region having high liquid repellency and a region having low liquid repellency.

  Application Example 13 An electronic apparatus according to this application example includes the electro-optical device described above.

  According to this configuration, an electronic device that can exhibit an electro-optically stable function can be obtained.

<Configuration of organic EL device>
FIG. 1 is an equivalent circuit diagram showing a configuration of an organic EL device as an electro-optical device. Hereinafter, the configuration of the organic EL device will be described with reference to FIG. In addition, in order to show the configuration in an easy-to-understand manner in each drawing referred to below, the layer thickness, dimensional ratio, angle and the like of each component are appropriately changed. Further, the organic EL device of the present embodiment may have a top emission structure or a bottom emission structure.

  As shown in FIG. 1, the organic EL device 11 includes a plurality of scanning lines 12, a plurality of signal lines 13 extending in a direction intersecting the scanning lines 12, and a plurality of power supply lines 14 extending in parallel to the signal lines 13. Are wired in a grid pattern. An area partitioned by the scanning line 12 and the signal line 13 is configured as a pixel area. The signal line 13 is connected to the signal line drive circuit 15. The scanning line 12 is connected to the scanning line driving circuit 16.

  Each pixel region holds a switching TFT (Thin Film Transistor) 21 to which a scanning signal is supplied to the gate electrode via the scanning line 12 and a pixel signal supplied from the signal line 13 via the switching TFT 21. A storage capacitor 22 is provided, and a driving TFT 23 (hereinafter referred to as “TFT element 23”) to which a pixel signal held by the storage capacitor 22 is supplied to the gate electrode is provided. Further, in each pixel region, when electrically connected to the power supply line 14 via the TFT element 23, an anode 24, a cathode 25, and an anode 24 and a cathode 25 into which drive current flows from the power supply line 14. A functional layer 26 sandwiched therebetween is provided.

  The organic EL device 11 includes a plurality of light emitting elements 27 including an anode 24, a cathode 25, and a functional layer 26. In addition, the organic EL device 11 includes a display area composed of a plurality of light emitting elements 27.

  According to this configuration, when the scanning line 12 is driven and the switching TFT 21 is turned on, the potential of the signal line 13 at that time is held in the holding capacitor 22, and the TFT element 23 depends on the state of the holding capacitor 22. ON / OFF state is determined. Then, a current flows from the power supply line 14 to the anode 24 through the channel of the TFT element 23, and further a current flows to the cathode 25 through the functional layer 26. The functional layer 26 emits light with a luminance corresponding to the amount of current flowing therethrough.

  FIG. 2 is a schematic plan view showing the configuration of the organic EL device. Hereinafter, the configuration of the organic EL device will be described with reference to FIG.

  As shown in FIG. 2, the organic EL device 11 includes a display region 32 (a region inside a one-dot chain line in the drawing) and a non-display region 33 (a region outside a one-dot chain line) on an element substrate 31 as a substrate made of glass or the like. It has the composition which has. The display area 32 is provided with an actual display area 32a (area inside the two-dot chain line) and a dummy area 32b (area outside the two-dot chain line in the figure).

  In the actual display area 32a, sub-pixels 34 (light emitting areas) from which light is emitted are arranged in a matrix. Each of the sub-pixels 34 emits light of R (red), G (green), and B (blue) in accordance with the operation of the switching TFT 21 and the TFT element 23 (see FIG. 1). .

  In the dummy area 32b, a circuit for mainly causing each sub-pixel 34 to emit light is provided. For example, the scanning line driving circuit 16 is disposed along the left side and the right side of the actual display region 32a in the drawing, and the inspection circuit 35 is disposed along the upper side of the actual display region 32a in the drawing.

  A flexible substrate 36 is provided on the lower side of the element substrate 31. The flexible substrate 36 is provided with a driving IC 37 connected to each wiring.

  FIG. 3 is a schematic cross-sectional view showing the structure of an organic EL device as an electro-optical device. Hereinafter, the structure of the organic EL device will be described with reference to FIG. FIG. 3 shows the cross-sectional positional relationship of each component and is represented on a scale that can be clearly shown.

  As shown in FIG. 3, the organic EL device 11 emits light in the light emitting region 42, and includes an element substrate 31, a circuit element layer 43 formed on the element substrate 31, and a circuit element layer 43. The light emitting element layer 44 formed and a cathode (common electrode) 25 formed on the light emitting element layer 44 are included. Examples of the element substrate 31 include a glass substrate having translucency.

In the circuit element layer 43, a base protective film 45 made of a silicon oxide film (SiO ₂ ) is formed on the element substrate 31, and the TFT element 23 is formed on the base protective film 45. Specifically, an island-shaped semiconductor film 46 made of a polysilicon film is formed on the base protective film 45. A source region 47 and a drain region 48 are formed in the semiconductor film 46 by introducing impurities. A portion where no impurity is introduced is a channel region 51. In addition, what drives the light emitting element 27 formed in the circuit element layer 43 is called a drive circuit element part.

  Further, a transparent gate insulating film 52 made of a silicon oxide film or the like that covers the base protective film 45 and the semiconductor film 46 is formed in the circuit element layer 43. A gate electrode 53 (scanning line) made of aluminum (Al), molybdenum (Mo), tantalum (Ta), titanium (Ti), tungsten (W), or the like is formed on the gate insulating film 52.

A transparent first interlayer insulating film 54 and a second interlayer insulating film 55 are formed on the gate insulating film 52 and the gate electrode 53. The first interlayer insulating film 54 and the second interlayer insulating film 55 are composed of, for example, a silicon oxide film (SiO ₂ ), a titanium oxide film (TiO ₂ ), or the like. The gate electrode 53 is provided at a position corresponding to the channel region 51 of the semiconductor film 46.

  The source region 47 of the semiconductor film 46 is electrically connected to the signal line 13 formed on the first interlayer insulating film 54 through a contact hole 56 provided through the gate insulating film 52 and the first interlayer insulating film 54. Connected. On the other hand, the drain region 48 is formed on the second interlayer insulating film 55 through a contact hole 57 provided through the gate insulating film 52, the first interlayer insulating film 54, and the second interlayer insulating film 55. It is electrically connected to the anode 24.

  The anode 24 is formed for each light emitting region 42, for example. The anode 24 is made of a transparent ITO (Indium Tin Oxide) film, and has, for example, a substantially rectangular shape in plan view. In the circuit element layer 43, a storage capacitor and a switching transistor (not shown) are formed. Further, as described above, in the circuit element layer 43, driving transistors (TFT elements 23) connected to the respective anodes 24 are formed.

  The light emitting element layer 44 includes the light emitting elements 27 arranged in a matrix and is formed on the element substrate 31. More specifically, the light emitting element layer 44 is mainly composed of a functional layer 26 formed on the anode 24 and a partition wall (bank) 62 that partitions the functional layer 26. The functional layer 26 includes, for example, a hole injection layer 63, a light emitting layer 64, and the like.

An insulating layer 66 is formed between the circuit element layer 43 and the partition wall 62. Examples of the insulating layer 66 include an inorganic material such as a silicon oxide film (SiO ₂ ). The insulating layer 66 is formed so as to run on the peripheral edge of the anode 24 in order to ensure insulation between the adjacent anodes 24 and to make the light emitting region 42 have a desired shape (for example, a track shape). ing. That is, the anode 24 and the insulating layer 66 have a structure in which they are arranged so as to partially overlap each other in plan view. In other words, the insulating layer 66 is formed in a region excluding the light emitting region 42.

  The partition wall 62 has, for example, a trapezoidal shape having an inclined surface when viewed in cross section, and is formed so as to surround the light emitting region 42 (light emitting element 27). That is, the enclosed region is the opening 67 (67b) of the partition wall 62. Examples of the material of the partition wall 62 include organic materials having heat resistance and solvent resistance such as acrylic resin and polyimide resin.

  As described above, the functional layer 26 is configured to include the hole injection layer 63 and the light emitting layer 64, and in the region surrounded by the partition wall 62, that is, in the opening 67 (the light emitting region 42), an inkjet method. Are formed in order.

  The hole injection layer 63 is composed of a conductive polymer layer containing a dopant in a conductive polymer material. Such a hole injection layer 63 can be composed of, for example, 3,4-polyethylenedioxythiophene (PEDOT-PSS) containing polystyrene sulfonic acid as a dopant.

  The light emitting layer 64 is formed on the hole injection layer 63 and is a layer of an organic light emitting material that exhibits an electroluminescence phenomenon. The cathode 25 is formed on the entire surface of the substrate including the functional layer 26 and the partition wall 62 (solid film formation).

  The cathode 25 is, for example, a laminate of calcium (Ca) and aluminum (Al). On the cathode 25, a sealing member (not shown) made of resin or the like for preventing water and oxygen from entering is laminated. The anode 24, the functional layer 26, and the cathode 25 constitute a light emitting element 27 as an electro-optical element.

  In the light emitting layer 64 described above, a voltage is applied between the anode 24 and the cathode 25, whereby holes are injected from the hole injection layer 63 and electrons are injected from the cathode 25 into the light emitting layer 64. The light emitting layer 64 emits light when they are combined. Hereinafter, the structure of the partition wall 62 for storing the liquid serving as the functional layer 26 in the opening 67 (67a, 67b) of the partition wall 62 will be described using an inkjet method.

(First embodiment)
<Partition structure>
FIG. 4 is a schematic diagram showing the structure of the partition walls constituting the organic EL device. (A) is a schematic plan view which shows the structure of a partition. (B) is a schematic cross section which follows the AA 'cross section of the partition shown to (a). (C) is a schematic cross section which follows the BB 'cross section of the partition shown to (a). (D) is a schematic cross section which follows the CC 'cross section of the partition shown to (a). In FIG. 4, the functional layer 26 and the cathode 25 described above in the organic EL device 11 are not shown.

  As shown in FIG. 4, the organic EL device 11 (partition wall 62) has the opening 67 as described above. The opening 67 is formed in a track shape having a long side (longitudinal direction) and a short side (short direction) in plan view. Specifically, the opening 67 of the partition wall 62 includes a light emitting region 42 having a long side and a short side, and a region of an arc 68 formed on the short side of the light emitting region 42.

  As shown in FIG. 4A, the partition wall 62 has a first region 62a and a second region 62b in plan view. Specifically, the first regions 62 a are alternately formed with the openings 67 interposed therebetween, and have a vertical stripe shape along the long side direction of the openings 67. More specifically, in the plurality of openings 67 arranged in the vertical direction, a region including the long side is the first region 62a. On the other hand, in the openings 67 arranged in the vertical direction (long side direction), a region including the arc 68 is a second region 62b.

  The first region 62a is formed to have a relatively higher height than the second region 62b. Specifically, the first region 62a is, for example, 0.2 μm higher than the second region 62b. This is because wiring or the like (for example, a power supply line) is formed below the first region 62a. In other words, in order to make the height of the first region 62a relatively higher than that of the second region 62b, the wiring is gathered and formed in the first region 62a.

  Further, the first region 62a has a relatively higher liquid repellency than the second region 62b. Specifically, the liquid repellency of the first region 62a is made higher than that of the second region 62b (base) by transferring a laminate film 69 as a liquid repellency control film to the first region 62a of the partition wall 62. ing. That is, the liquid repellency of the first region 62a including the long side (straight side) in the opening 67 is high, and the liquid repellency of the second region 62b including the short side (arc 68 side) is low.

  Here, “high liquid repellency” refers to a relatively large contact angle with the liquid. That is, it can be said that the liquid is less likely to overflow from the opening 67 to the first region 62a on the long side where the liquid repellency is increased. On the other hand, “low liquid repellency” means that the contact angle with the liquid is relatively small. That is, it can be said that the liquid is easily filled in the second region 62b on the short side (region including the arc 68) where the liquid repellency of the opening 67 is lowered. In other words, the liquid such as the light emitting layer 64 can be filled in the entire opening 67 of the partition wall 62, and the thickness of the light emitting layer 64 and the like can be made uniform. The detailed material and manufacturing method of the partition wall 62 will be described later.

<Method for manufacturing organic EL device>
FIG. 5 is a process diagram showing a method for manufacturing an organic EL device. FIG. 6 is a schematic cross-sectional view showing a part of the method for manufacturing the organic EL device. Hereinafter, a method for manufacturing the organic EL device will be described with reference to FIGS. 3, 5, and 6. As shown in FIG. 5, the circuit element layer to the partition are formed by steps S1 to S6. Further, the organic EL device 11 is completed by steps S11 to S16. Note that the manufacturing process for forming various wirings, electrodes, driving TFTs, and the like is the same as a well-known process, so the description thereof will be omitted or simplified here and the subsequent processes will be described in detail.

  First, in step S1, a circuit element layer 43 (refer to FIG. 3 hereinafter) is formed on the element substrate 31 using a known film forming technique. In step S <b> 2, the anode 24 made of ITO is formed on the circuit element layer 43. In the first region 62a of the circuit element layer 43, a power supply line (not shown) (for example, a power supply line) that supplies power to each TFT element 23 is disposed. Therefore, the height of the first region 62a in the circuit element layer 43 is formed higher than the height of the second region 62b (for example, 0.2 μm).

In step S <b> 3, an insulating layer 66 (pixel separation film) is formed on the circuit element layer 43 and the anode 24. Specifically, first, an insulating layer including a silicon oxide film (SiO ₂ ), which is a material of the insulating layer 66, covers the circuit element layer 43 and the anode 24 by a CVD (Chemical Vapor Deposition) method or the like. To form. Next, an opening 67a is formed in a region corresponding to the light emitting region 42 in the insulating layer by using a photolithography technique and an etching technique, and the insulating layer 66 is completed.

  In step S <b> 4, the partition wall 62 is formed on the insulating layer 66. First, a coating liquid of a material for the partition wall 62 is applied on the insulating layer 66 and the anode 24. Specifically, it is a coating liquid of acrylic resin containing a liquid repellent in which the capacity of the liquid repellent is adjusted so that the contact angle of the partition wall 62 with the liquid is 90 °. Next, the coating liquid is dried to form a partition layer. Thereafter, an opening 67b is formed in a region corresponding to the light emitting region 42 in the partition layer. Thereby, the shape of the partition wall 62 is completed.

In step S5, the partition wall 62 is subjected to oxygen (O ₂ ) plasma treatment (lyophilic treatment). The oxygen plasma treatment conditions are, for example, plasma power of 100 kW to 800 kW, oxygen gas flow rate of 50 ml / min to 100 ml / min, plate conveyance speed of 0.5 mm / sec to 10 mm / sec, and substrate temperature of 70 ° C. to 90 ° C. By performing the treatment under such conditions, the liquid repellency of the partition wall 62 can be lowered as compared with that before the oxygen plasma treatment.

  In step S6, the laminate film 69 for increasing the liquid repellency is transferred to the first region 62a of the partition wall 62 as compared with the second region 62b. As described above, the height of the first region 62a is formed higher than the height of the second region 62b.

  A method for producing the laminate film 69 is that a fluorine coating agent (for example, Novec (registered trademark) EGC-1720 manufactured by Sumitomo 3M) is applied to a polyethylene terephthalate base film (for example, AT301 manufactured by Teijin DuPont, Inc.) having a thickness of 20 μm. It is manufactured by coating with a bar coater and heating at 100 ° C. for 30 seconds. Thereby, a film with a film of 80 nm is formed. Thereafter, the laminate film 69 is attached only to the high first region 62a by an atmospheric pressure laminator.

  As a result, the liquid repellency of the first region 62a can be made higher than the liquid repellency of the second region 62b, and the first region 62a having a large contact angle and the second region 62b having a small contact angle can be obtained. The partition wall 62 having this is completed.

  As described above, the first region 62a of the partition wall 62 has a contact angle with the liquid (functional liquid) of 90 °, for example, and the second region 62b has a contact angle of 50 ° with the liquid (functional liquid), for example. Is completed.

  Next, in step S11, a functional liquid containing the material of the hole injection layer 63 is discharged onto the light emitting region 42 surrounded by the insulating layer 66 and the partition wall 62 on the anode 24 by a droplet discharge method (for example, an ink jet method). To do. Specifically, the droplet of the functional liquid is discharged toward the recess having the anode 24 as the bottom and the insulating layer 66 and the partition 62 as the side wall.

  As the functional liquid of the hole injection layer 63, for example, a mixture (PEDOT / PSS) in which polystyrene sulfonic acid (PSS) as a dopant is added to a polythiophene derivative such as polyethylenedioxythiophene (PEDOT) can be used. As an example of the PEDOT-PSS dispersion, a PEDOT / PSS weight ratio of 1:10, a solid content concentration of 0.5%, a diethylene glycol content of 50%, and a remaining amount of pure water is used. be able to.

  In step S12, the functional liquid is dried to form the hole injection layer 63. Specifically, the hole injection layer 63 is formed in the opening 67 by drying or baking the functional liquid in a high temperature environment to evaporate the solvent and solidify PEDOT-PSS contained in the functional liquid. As a drying condition, for example, the element substrate 31 is allowed to stand for 10 minutes in an environment of 200 ° C. The film thickness is, for example, 50 nm.

  In step S13, the functional liquid 61 containing the material of the light emitting layer 64 is discharged onto the hole injection layer 63 by a droplet discharge method. As the functional liquid 61 of the light emitting layer 64, for example, a liquid containing a red fluorescent material at a solid content concentration of 0.8% and using cyclohexylbenzene as a solvent can be used.

  As described above, since the region including the straight line (longitudinal direction) in the opening 67 of the partition wall 62 is the first region 62 a having high liquid repellency, the functional liquid 61 is prevented from overflowing outside the opening 67. (See FIG. 6 (a)). On the other hand, since the short side (the region including the arc 68) in the opening 67 of the partition wall 62 is the second region 62b having low liquid repellency, the functional liquid 61 that is deposited on the second region 62b is formed. It is possible to suppress retreat. In other words, the functional liquid 61 can be filled up to the region of the arc 68. Thereby, it can suppress that the thickness of the light emitting layer 64 in the opening part 67 becomes non-uniform | heterogenous.

  In step S14, the functional liquid 61 is dried to form the light emitting layer 64 (see FIG. 6B). Specifically, the light emitting layer 64 is formed by drying or baking the functional liquid in a high temperature environment to evaporate the solvent and solidifying the red fluorescent material or the like contained in the functional liquid. As a condition for drying, for example, the element substrate 31 is left for 1 hour in an environment of 100 ° C. The film thickness of the formed light emitting layer 64 is, for example, 100 nm. Since the light emitting layer 64 formed in this way has a larger area than the hole injection layer 63, a relatively flat region of the light emitting layer 64 can be used for light emission.

  In step S15, the cathode 25 is formed by laminating a calcium film and an aluminum film in this order, for example, by vapor deposition on substantially the entire surface of the element substrate 31 on which the light emitting layer 64 is formed. The formed calcium film is, for example, 5 nm. The formed aluminum film is, for example, 300 nm.

  In step S16, an organic EL element is formed on the cathode 25 by sealing using, for example, an adhesive and a glass substrate. As a result, the organic EL device 11 is completed.

  As described above in detail, according to the first embodiment, the following effects can be obtained.

  (1) According to the first embodiment, since the heights of the first region 62a and the second region 62b in the partition wall 62 are changed, the laminated film 69 (having high liquid repellency on the higher first region 62a) The liquid repellency control film) can be transferred, and the liquid repellency can be made different between the first region 62a and the second region 62b subjected to the oxygen plasma treatment. Thereby, the liquid repellency of the 2nd area | region 62b with poor liquid filling property can be made low, and the liquid repellency of the 1st area | region 62a where a liquid tends to overflow can be made high. Therefore, it is possible to fill the entire inside of the opening 67 partitioned by the partition wall 62, and a substantially uniform film thickness can be obtained over the entire opening 67.

  (2) According to the first embodiment, since the laminate film 69 is transferred to the first region 62a after the oxygen plasma treatment is performed, the oxygen plasma treatment is performed after the laminate film 69 having high liquid repellency is first transferred. Compared with the method of performing, it can prevent that the contact angle of the 1st area | region 62a becomes small.

  (3) According to the first embodiment, since the first region 62a and the second region 62b having different heights are formed in a stripe shape in the vertical direction in the plan view, the light emitting layer 64 of the same color is arranged in the vertical direction. In this case, even if the liquid overflows outside the opening 67, the regions having the same height are arranged in the same color, so that the light emitting layer 64 can be prevented from being mixed in color.

(Second Embodiment)
<Partition structure>
FIG. 7 is a schematic diagram showing the structure of the partition wall according to the second embodiment. (A) is a schematic plan view which shows the structure of a partition. (B) is a schematic cross section which follows the AA 'cross section of the partition shown to (a). (C) is a schematic cross section which follows the BB 'cross section of the partition shown to (a). Hereinafter, the structure of the partition will be described with reference to FIG.

  In the organic EL device 71 (partition wall 72) shown in FIG. 7, the functional layer 26, the cathode 25, and the like are not shown in the same manner as in the first embodiment. Further, the first region 72a and the second region 72b of the partition wall 72 of the second embodiment are different from those of the first embodiment in that they are alternately provided in stripes along the short side direction in plan view. . Hereinafter, the same components as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted or simplified here.

  As shown in FIG. 7, the organic EL device 71 (partition wall 72) of the second embodiment has an opening 67 similar to that of the partition wall 62 of the first embodiment. The partition wall 72 includes a first region 72 a including a region (long side) including a straight line in the opening 67 and a second region 72 b including a region of the arc 68 (short side) in the opening 67. .

  As a part different from the first embodiment, the arrangement of the first region 72 a and the second region 72 b is a stripe shape along the short side direction of the opening 67 in a plan view. Specifically, in the openings 67 arranged along the short side direction, a region including a straight line is a first region 72a. On the other hand, in the openings 67 arranged along the short side direction, a region including the arc 68 is a second region 72b.

  The first region 72a is formed to have a relatively higher height than the second region 72b. Specifically, the first region 72a is 0.2 μm higher than the second region 72b. This is because wiring and the like are formed below the first region 72a. In other words, in order to make the height of the first region 72a relatively higher than the height of the second region 72b, the wiring is gathered and formed in the first region 72a.

  Further, the first region 72a has a relatively higher liquid repellency than the second region 72b. More specifically, as in the first embodiment, by transferring the laminate film 79 to the first region 72a of the partition wall 72 that should have high liquid repellency, the liquid repellency of the first region 72a is reduced to that of the second region 72b. Compared to liquid repellency. That is, the liquid repellency of the region including the long side (straight side) in the opening 67 is high, and the liquid repellency of the region including the short side (arc 68) is low.

  That is, it can be said that the liquid is less likely to overflow from the opening 67 to the first region 72a on the long side (straight side) with high liquid repellency. In addition, it can be said that the liquid is easily filled in the second region 72b on the short side (arc 68 side) in the opening 67 having low liquid repellency.

<Method for manufacturing organic EL device>
Hereinafter, the manufacturing method of the organic EL device of the second embodiment will be described. The processing steps for forming the organic EL device are the same as those in the first embodiment. Here, only parts different from the first embodiment will be described with reference to FIG.

  As shown in FIG. 5, in step S <b> 1, a circuit element layer 43 is formed on the element substrate 31. In a portion corresponding to the first region 72a of the circuit element layer 43 in the second embodiment, a power supply line for supplying power to each TFT element 23 is disposed. Thereby, the height of the first region 72a in the circuit element layer 43 is formed higher than the height of the second region 72b (for example, 0.2 μm). Thereafter, steps S2 to S5 are performed in the same manner as in the first embodiment.

  In step S6, the liquid repellency of the first region 72a in the partition wall 72 is made higher than that of the second region 72b. As described above, the height of the first region 72a is formed higher than the height of the second region 72b. First, a laminate film 79 for adjusting liquid repellency is attached on the first region 72a in the high region.

  The manufacturing method of the laminate film 79 is the same as that of the first embodiment. Thereby, the partition 72 in which the first regions 72a and the second regions 72b extend alternately in the lateral direction can be formed.

  As described above, since the laminate film 79 is transferred only to the first region 72a after the lyophilic treatment (oxygen plasma treatment) is performed on the entire partition wall 72, for example, the first region 72a is a liquid (functional liquid). The contact angle is 90 °, and the contact angle of the second region 72b with the liquid (functional liquid) is 50 °.

  As described above, since the region including the straight line in the opening 67 of the partition wall 72 is the first region 72 a having high liquid repellency, the functional liquid can be prevented from overflowing outside the opening 67. On the other hand, since the short side (the area including the arc 68) in the opening 67 of the partition wall 72 is the second area 72b having low liquid repellency, the functional liquid that is deposited on the second area 72b moves backward. Can be suppressed. In other words, the liquid can be filled up to the region of the arc 68. Thereby, it can suppress that the thickness of the light emitting layer 64 in the opening part 67 becomes non-uniform | heterogenous. Hereinafter, the organic EL device 71 of the second embodiment is completed by performing steps S11 to S16.

  As described above in detail, according to the second embodiment, in addition to the effects (1) and (2) of the first embodiment described above, the following effects can be obtained.

  (4) According to the second embodiment, since the region including the long side of the opening 67 arranged in the short side direction in a plane is raised, even if the region to be raised is slightly shifted in the long side direction, It is possible to increase the area including the long side of the opening 67, and it is possible to further suppress the liquid from overflowing from the long side of the opening 67 to the first area 72a. In other words, it is easier to adjust the range of the first region 72a that increases the liquid repellency than in the first embodiment.

(Third embodiment)
<Configuration of electronic equipment>
FIG. 8 is a schematic diagram illustrating a mobile phone as an example of an electronic apparatus including the above-described organic EL device. Hereinafter, the configuration of the mobile phone including the organic EL device will be described with reference to FIG.

  As shown in FIG. 8, the mobile phone 91 has a display unit 92 and operation buttons 93. The display unit 92 can perform high-quality display such that the organic EL device 11 (71) incorporated therein can emit light uniformly. The above-described organic EL device 11 (71) includes various electronic devices such as a mobile computer, a digital camera, a digital video camera, an in-vehicle device, an audio device, a display device such as an exposure device and a lighting device, in addition to the mobile phone 91. Can be used.

  As described above in detail, according to the third embodiment, the following effects can be obtained.

  (5) According to the third embodiment, since the organic EL device 11 (71) of the first embodiment or the second embodiment described above is provided, an electro-optically stable function can be exhibited ( For example, a high-quality image can be formed).

  In addition, embodiment is not limited above, It can also implement with the following forms.

(Modification 1)
As described above, after the oxygen plasma treatment is performed on the partition walls 62 and 72, the laminate films 69 and 79 having relatively higher liquid repellency than the second areas 62b and 72b are applied to the first areas 62a and 72a having a high height. Is not limited to forming a region with high liquid repellency and a region with low liquid repellency, but may be formed by the following method.

  FIG. 9 is a process diagram showing a modification of the method for manufacturing the organic EL device. Hereinafter, a different part from 1st Embodiment is demonstrated, referring FIG.9 and FIG.4. First, in step S1 to step S3, the circuit element layer 43, the anode 24, and the insulating layer 66 are formed. At this time, as a portion different from the first embodiment, the region including the straight line in the opening 67 is formed to be lower in height than the region including the arc 68. Thereby, when the partition wall 62 is formed in step S4, a region including a straight line is formed low. Next, in step S105, a laminate film for reducing liquid repellency is transferred to a region including the arc 68 having a high height.

  The laminate film is produced by applying acrylic resin to a 20 μm thick polyethylene terephthalate base film (for example, AT301 manufactured by Teijin DuPont) with a bar coater and heating at 100 ° C. for 30 seconds. Thereby, a film with a film of 400 nm is completed. Next, a laminate film is attached only to a high region (arc 68 side) by an atmospheric pressure laminator. Next, in step S106, the partition wall 62 is subjected to UV ozone treatment. The UV ozone treatment is performed, for example, with a low-pressure mercury lamp for 2 minutes.

  As described above, the first region 62a including the straight line in the partition wall 62 has a contact angle with the liquid (functional liquid) of 70 °, and the second region 62b including the arc 68 has a contact angle with the liquid (functional liquid) of 30 °. Thus, the formation of the partition wall 62 is completed.

  Thereby, since the liquid repellency of the area | region containing the straight line in the opening part 67 is high, it can suppress that a functional liquid overflows the outer side of the opening part 67. FIG. On the other hand, since the liquid repellency on the short side (region including the arc 68) in the opening 67 is low, it is possible to prevent the functional liquid that is wet and deposited from retreating. That is, the liquid can be spread over the entire opening 67.

  The forming method as described above is not limited to the partition 62 (vertical stripe) of the first embodiment, and may be applied to the partition 72 (horizontal stripe) of the second embodiment.

(Modification 2)
The shape of the opening 67 of the partition walls 62 and 72 described above is not limited to a planar track-divided track shape, and is applied to the shape of the opening 87 of the organic EL device 81 as shown in FIG. May be. A partition wall (common partition wall 82) illustrated in FIG. 10 indicates the common partition wall 82 that partitions a pixel region including the plurality of light emitting elements 27. The common partition wall 82 includes a first region 82a having a high liquid repellency including the straight line of the light emitting region 83 and a second region 82b having a low liquid repellency, which is the other region (a region including the arc 68). According to the common partition wall 82, the region including the arc 68 in the opening 87 is the second region 82b having low liquid repellency. Therefore, the functional liquid (e.g., light emission) is formed by wetting the second region 82b. It is possible to prevent the functional fluid of the layer) from retreating. In addition, since the region including the straight line in the opening 87 is the first region 82 a having high liquid repellency, the functional liquid can be prevented from overflowing outside the opening 87. Furthermore, the presence of the second region 82 b that does not include the arc 68 in the common partition wall 82 can suppress poor filling when a sufficient functional liquid does not enter the light emitting region 83. Therefore, uniform light emission characteristics can be obtained in the light emitting region 83.

(Modification 3)
In the above-described embodiment, the present invention is not limited to forming a wiring or the like below a region to be raised in order to provide a step. For example, a structure (film) such as an insulating film is formed or a resist patterning layer is formed. You may make it form so that it may leave. The insulating film of the structure can be formed by, for example, mask vapor deposition using a silicon oxide film, or film formation and etching. According to this, a desired region can be reliably formed high. Moreover, a structure may make it raise only the circumference | surroundings of the opening part 67, and may affix the laminate films 69 and 79 only on the part. The resist pattern layer is the same as that used when forming the wiring and the like.

(Modification 4)
In the first embodiment described above, the range (first region 62a and second region 62b) to which the laminate film 69 is attached is not changed for each of the R, G, and B light emitting regions. You may make it change the range which pastes 69. FIG. According to this, when the contact angles between the R, G, and B functional liquids and the laminate film 69 are different, the functional liquid can be further prevented from overflowing from the long side of the opening 67.

(Modification 5)
In the above-described embodiment, the functional film of the organic EL devices 11 and 71 has been described. However, the present invention is not limited to this, and may be applied to the formation of a color filter.

FIG. 3 is an equivalent circuit diagram schematically showing a configuration of an organic EL device as an electro-optical device. The schematic plan view which shows the structure of an organic electroluminescent apparatus. The schematic cross section which shows the structure of an organic electroluminescent apparatus. It is a schematic diagram which shows the structure of the partition which comprises the organic electroluminescent apparatus of 1st Embodiment, (a) is a schematic plan view which shows the structure of a partition, (b) is the AA 'cross section of the partition shown to (a). (C) is a schematic cross section which follows the BB 'cross section of the partition shown to (a). Process drawing which shows the manufacturing method of an organic electroluminescent apparatus. The schematic cross section which shows a part of manufacturing method of an organic electroluminescent apparatus. It is a schematic diagram which shows the structure of the partition of 2nd Embodiment, (a) is a schematic plan view which shows the structure of a partition, (b) is a schematic cross section along the AA 'cross section of the partition shown to (a), (C) is a schematic cross section which follows the BB 'cross section of the partition shown to (a). FIG. 3 is a schematic diagram illustrating a mobile phone as an example of an electronic apparatus including an organic EL device. Process drawing which shows the modification of the manufacturing method of an organic electroluminescent apparatus. It is a schematic diagram which shows the modification of a partition, (a) is a schematic plan view which shows the structure of a partition, (b) is a schematic cross section along the AA 'cross section of the partition shown to (a), (c) is The schematic cross section which follows the BB 'section of the partition shown in (a).

  DESCRIPTION OF SYMBOLS 11, 71, 81 ... Organic EL device, 12 ... Scan line, 13 ... Signal line, 14 ... Power supply line, 15 ... Signal line drive circuit, 16 ... Scan line drive circuit, 21 ... Switching TFT, 22 ... Retention capacity, DESCRIPTION OF SYMBOLS 23 ... TFT element, 24 ... Anode, 25 ... Cathode, 26 ... Functional layer, 27 ... Light emitting element, 31 ... Element substrate as a substrate, 32 ... Display area, 33 ... Non-display area, 34 ... Subpixel, 35 ... Inspection Circuit, 36 ... Flexible substrate, 37 ... Driving IC, 42 ... Light emitting region, 43 ... Circuit element layer, 44 ... Light emitting element layer, 45 ... Base protective film, 46 ... Semiconductor film, 47 ... Source region, 48 ... Drain region , 51 ... channel region, 52 ... gate insulating film, 53 ... gate electrode, 54 ... first interlayer insulating film, 55 ... second interlayer insulating film, 56 ... contact hole, 57 ... contact hole, 62, 72 ... partition wall, 62 , 72a, 82a ... first region, 62b, 72b, 82b ... second region, 63 ... hole injection layer, 64 ... light emitting layer, 66 ... insulating layer, 67, 87 ... opening, 68 ... arc, 69, 79 A laminated film as a liquid repellency control film, 82 a common partition, 91 a mobile phone as an electronic device.

Claims (13)

An electro-optic element provided on the substrate;
Partitioning the electro-optic element and having a first region and a second region having different heights, and
At least one film constituting the electro-optic element is formed using a liquid process;
A liquid repellency control film for relatively different liquid repellency between the first area and the second area is transferred to a high area of the first area and the second area. An electro-optical device. The electro-optical device according to claim 1,
The region surrounded by the partition wall is an opening having a long side and a short side,
The first region includes the long side region,
The second region includes the short side region,
An electro-optical device characterized in that the liquid repellency of the first region is relatively higher than the liquid repellency of the second region. The electro-optical device according to claim 1 or 2,
The electro-optical device, wherein the high region is provided by using a thickness of a driving circuit element unit for driving the electro-optical element. The electro-optical device according to claim 1 or 2,
The electro-optical device according to claim 1, wherein the high region is formed based on a film formed in a desired region on the substrate. The electro-optical device according to claim 1 or 2,
The electro-optical device, wherein the high region is provided based on a resist patterning layer. Forming a partition including a first region and a second region having different heights while partitioning a region for forming the electro-optic element on the substrate;
Transferring a liquid repellency control film for relatively different liquid repellency between the first area and the second area to a high area of the first area and the second area;
A step of discharging a liquid having electro-optical properties in an opening surrounded by the partition;
A method for manufacturing an electro-optical device. The method of manufacturing an electro-optical device according to claim 6,
The opening has a long side and a short side,
The step of forming the partition includes forming the first region so as to include the long side region, and forming the second region so as to include the short side region,
In the step of transferring the liquid repellency control film, the liquid repellency control film is transferred to the first region so that the liquid repellency of the liquid is relatively higher in the first region than in the second region. A method for manufacturing an electro-optical device. A method of manufacturing the electro-optical device according to claim 6 or 7,
Before the step of forming the partition wall, a drive circuit element unit for driving the electro-optical element is formed in one of the first region and the second region. Manufacturing method of optical device. A method of manufacturing the electro-optical device according to claim 6 or 7,
A method of manufacturing an electro-optical device, wherein a film is formed in one of the first region and the second region before the step of forming the partition. A method of manufacturing the electro-optical device according to claim 6 or 7,
Before the step of forming the partition, at least a part of the resist patterning layer formed up to the step of forming the partition is left in one of the first region and the second region. A method for manufacturing an electro-optical device. A method of manufacturing the electro-optical device according to claim 6 or 7,
A method of manufacturing an electro-optical device, wherein the partition wall is subjected to a lyophilic treatment before the step of transferring the liquid repellency control film. The method of manufacturing an electro-optical device according to claim 11,
The method of manufacturing an electro-optical device, wherein the lyophilic process is a plasma process.   An electronic apparatus comprising the electro-optical device according to any one of claims 1 to 5.

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