JP2012169430A - Heat exchanger - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve heat exchange efficiency in a heat exchanger where multi-tier inner fins are provided in a heat medium passage.SOLUTION: A heat medium passage 30 is divided into multiple narrow passages 333 in a passage pipe 3, and inner fins 33 facilitating heat exchange between a heat medium and an electronic component 2 are provided. The multiple inner fins 33 are stacked in an arrangement direction of the passage pipe 3 and the electronic component 2, and a passage resistance of the heat medium in the inner fin 33A positioned closest to the electronic apparatus 2, from among the multi-tier inner fins 33, is set so as to be lower than the passage resistance of the heat medium in the other inner fins 33B.

Description

  The present invention relates to a heat exchanger that exchanges heat between a heat medium that flows through a flow channel pipe and a heat exchange object disposed outside the flow pipe.

  Conventionally, in this type of heat exchanger, in order to improve the heat exchange performance, the heat transfer area between the heat medium and the flow path tube is increased in the flow path tube through which the heat medium flows, and the heat medium and the heat exchange target The thing provided with the inner fin which accelerates | stimulates heat exchange with a thing is proposed (for example, refer patent document 1).

JP 2005-191527 A

  By the way, the present applicant previously proposed in Japanese Patent Application No. 2010-98753 (hereinafter referred to as the prior application example) a heat exchanger of this type in which inner fins are arranged in a plurality of layers in a flow path pipe. Yes. In this prior application example, the specifications (fin pitch, fin height, etc.) of the inner fins stacked in a plurality of stages are common. For this reason, no measures have been taken to further improve the heat exchange performance, and there is room for improvement.

  In view of the above points, an object of the present invention is to improve heat exchange efficiency in a heat exchanger in which a plurality of stages of inner fins are provided in a heat medium flow path.

  In order to achieve the above object, according to the first aspect of the present invention, in the flow path forming member (3), the heat medium flow path (30) is divided into a plurality of narrow flow paths (333), and the heat medium and Inner fins (33) that promote heat exchange with the heat exchange object (2) are provided, and the inner fins (33) are arranged between the flow path forming member (3) and the heat exchange object (2). A plurality of stages of inner fins (33) are stacked in the direction, and the passage resistance of the heat medium in the inner fin (33A) located closest to the heat exchange object (2) is the other inner fin (33). It is characterized by being lower than the passage resistance of the heat medium in the fin (33B).

  As described above, the heat resistance of the inner fin (33A) located on the side closest to the heat exchange object (2) among the plurality of stages of inner fins (33) is set to the other inner fin (33B). By making it lower than the passage resistance of the heat medium, the flow rate of the heat medium in the narrow channel (333A) divided by the inner fin (33A) located on the side closest to the heat exchange object (2) is reduced to other inner The flow rate is higher than the flow rate of the heat medium in the narrow channel (333B) divided by the fins (33B). Thereby, since the flow velocity of the heat medium flowing into the narrow channel (333A) on the side close to the heat exchange object (2) can be increased, the heat exchange efficiency can be improved.

  Further, in the invention according to claim 2, in the heat exchanger according to claim 1, the inner fin (33) has a cross-sectional shape perpendicular to the flow direction of the heat medium, with the protrusions on one side and the other side. It is formed into a wave shape that bends alternately and is located, and in the cross-sectional shape, when the distance between the centers of adjacent convex portions on the same side of the one side and the other side is the fin pitch (FP), Of the plurality of inner fins (33), the fin pitch (FP) of the inner fin (33A) located closest to the heat exchange object (2) is the fin pitch (FP) of the other inner fin (33B). ).

  Thus, the fin pitch (FP) of the inner fin (33A) located on the side closest to the heat exchange object (2) among the plurality of stages of inner fins (33) is set to the other inner fin (33B). By making it coarser than the fin pitch (FP), the passage resistance of the heat medium in the inner fin (33A) located on the side closest to the heat exchange object (2) can be reduced by the heat medium in the other inner fin (33B). It can be made lower than the passage resistance. Thereby, since the flow volume of the heat medium which flows into the narrow flow path (333A) on the side close to the heat exchange object (2) can be increased, it becomes possible to improve the heat exchange efficiency.

  According to a third aspect of the present invention, in the heat exchanger according to the first or second aspect, the inner fin (33) has a cross-sectional shape perpendicular to the flow direction of the heat medium, with the convex portion on one side and the other. The inner fin (33) is formed in a wave shape that is bent alternately, and when the dimension in the arrangement direction of the inner fin (33) is defined as the fin height (FH), among the plurality of inner fins (33), the heat The fin height (FH) of the inner fin (33A) located on the side closest to the replacement object (2) is higher than the fin height (FH) of the other inner fin (33B).

  Thus, the fin height (FH) of the inner fin (33A) located on the side closest to the heat exchange object (2) among the plurality of stages of inner fins (33) is set to the other inner fin (33B). By making the height higher than the fin height (FH), the heat transfer resistance of the inner fin (33A) located on the side closest to the heat exchange object (2) is reduced by the heat in the other inner fin (33B). It can be lower than the passage resistance of the medium. Thereby, since the flow volume of the heat medium which flows into the narrow flow path (333A) on the side close to the heat exchange object (2) can be increased, it becomes possible to improve the heat exchange efficiency.

  According to a fourth aspect of the present invention, in the heat exchanger according to any one of the first to third aspects, the inner fin (33) extends in the flow direction of the heat medium and the narrow channel (333). It has a plate portion (331) to be divided and a connecting portion (332) that connects between adjacent plate portions (331), and the cross-sectional shape perpendicular to the flow direction of the heat medium becomes wavy and viewed from the arrangement direction. In this case, the plate part (331) is a wave fin that is refracted in a wave shape in the flow direction of the heat medium, and the inner fin (33) is orthogonal to the arrangement direction and is the central part in the arrangement direction in the narrow channel (333). When the dimension in the amplitude direction of the wave shape of the plate portion (331) in the cross section passing through is the wave depth (WD), of the plurality of inner fins (33), the closest to the heat exchange object (2) Inner located on the side Wave depth of the fins (33A) (WD) is, it is characterized in shallower than the wave depth of the other inner fins (33B) (WD).

  Thus, while making the inner fin (33) a wave fin, the wave depth of the inner fin (33A) located on the side closest to the heat exchange object (2) among the plurality of stages of inner fins (33). By making (WD) shallower than the wave depth (WD) of the other inner fin (33B), the heat medium passes through the inner fin (33A) located on the side closest to the heat exchange object (2). Resistance can be made lower than the passage resistance of the heat medium in the other inner fin (33B). Thereby, since the flow volume of the heat medium which flows into the narrow flow path (333A) on the side close to the heat exchange object (2) can be increased, it becomes possible to improve the heat exchange efficiency.

  According to a fifth aspect of the present invention, in the heat exchanger according to any one of the first to fourth aspects, the inner fin (33) extends in the flow direction of the heat medium and the narrow channel (333). It has a plate portion (331) to be divided and a connecting portion (332) that connects between adjacent plate portions (331), and the cross-sectional shape perpendicular to the flow direction of the heat medium becomes wavy and viewed from the arrangement direction. In this case, the plate part (331) is a wave fin that is refracted in a wave shape in the flow direction of the heat medium, and the inner fin (33) is orthogonal to the arrangement direction and is the central part in the arrangement direction in the narrow channel (333). When the wave-shaped pitch of the plate part (331) in the cross section passing through is the wave pitch (WP), it is located on the side closest to the heat exchange object (2) among the multiple-stage inner fins (33). Inner fin (3 Wave pitch A) (WP) has been characterized by coarser than the wave pitch of the other inner fins (33B) (WP).

  In this way, the inner fin (33) is a wave fin, and the wave pitch (WP) of the inner fin (33A) located on the side closest to the heat exchange object (2) is set to another inner fin (33B). The passage resistance of the heat medium in the inner fin (33A) located on the side closest to the heat exchange object (2) is reduced by making it rougher than the wave pitch (WP) of the heat medium in the other inner fin (33B). It can be made lower than the passage resistance. Thereby, since the flow volume of the heat medium which flows into the narrow flow path (333A) on the side close to the heat exchange object (2) can be increased, it becomes possible to improve the heat exchange efficiency.

  In addition, the code | symbol in the bracket | parenthesis of each means described in this column and the claim shows the correspondence with the specific means as described in embodiment mentioned later.

It is a front view which shows the laminated heat exchanger 1 which concerns on 1st Embodiment. It is AA sectional drawing of FIG. It is an expanded sectional view showing channel pipe 3 neighborhood in a 2nd embodiment. It is an expanded sectional view showing channel pipe 3 neighborhood in a 3rd embodiment. It is an expanded sectional view showing channel pipe 3 neighborhood in a 4th embodiment. It is an expanded sectional view showing inner fin 33 in a 5th embodiment. It is an expanded sectional view showing channel pipe 3 neighborhood in a 6th embodiment. It is an expanded sectional view showing inner fin 33 in a 6th embodiment, (a) shows outside inner fin 33A, and (b) shows inside inner fin 33B. It is an expanded sectional view which shows the inner fin 33 in 7th Embodiment, (a) has shown the outer side inner fin 33A, (b) has shown the inner side inner fin 33B. It is a disassembled perspective view which shows the heat exchanger which concerns on 8th Embodiment. It is sectional drawing which shows the heat exchanger which concerns on 8th Embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, the same or equivalent parts are denoted by the same reference numerals in the drawings.

(First embodiment)
A first embodiment of the present invention will be described with reference to FIGS. 1 and 2. FIG. 1 is a front view showing a stacked heat exchanger 1 according to the first embodiment.

  As shown in FIG. 1, the laminated heat exchanger 1 of the present embodiment cools a plurality of electronic components 2 as heat exchange objects from both sides, and a heat medium flow path 30 (see FIG. 2), and a communication member 4 that communicates the plurality of flow channel tubes 3. The plurality of flow path pipes 3 are formed in a flat shape, and a plurality of the flow path pipes 3 are arranged so as to sandwich the electronic component 2 from both sides.

  In the present embodiment, as the electronic component 2, a semiconductor module incorporating a semiconductor element such as an IGBT and a diode is used. The semiconductor module can be used for an inverter for automobiles, a motor drive inverter for industrial equipment, an air conditioner inverter for building air conditioning, and the like. In addition to the semiconductor module, for example, a power transistor, a power FET, an IGBT, or the like can be used as the electronic component 2.

  In addition, fluid such as air, water, oil is used as the heat medium. More specifically, for example, when the stacked heat exchanger 1 is mounted on an automobile, automobile cooling water, oil, or the like can be used as the heat medium. In the present embodiment, water mixed with an ethylene glycol antifreeze is used as the heat medium.

  2 is a cross-sectional view taken along the line AA in FIG. As shown in FIG. 2, the channel tube 3 of this embodiment has a so-called drone cup structure. That is, the flow path pipe 3 is configured to have a pair of outer shell plates 31, and the heat medium flow path 30 is formed between the pair of outer shell plates 31. An inner fin 33 that divides the heat medium flow path 30 into a plurality of narrow flow paths 333 and promotes heat exchange between the heat medium and the electronic component 2 is provided in the flow path pipe 3. Details of the inner fin 33 will be described later.

Returning to FIG. 1, the electronic component 2 is disposed on a part of the outside of the flow path tube 3. Specifically, two electronic components 2 are provided for each of the pair of outer shell plates 31 of the channel tube 3. The two electronic components 2 provided on each outer shell plate 31 are arranged in series in the flow direction of the heat medium. In the present embodiment, two electronic components 2 are provided on each outer shell plate 31, but one electronic component 2 may be provided, or three or more electronic components 2 may be provided. At both ends in the longitudinal direction of the outer shell plate 31 of the channel tube 3, a substantially cylindrical flange portion 300 that protrudes to the outside, that is, the side of the other adjacent channel tube 3 is formed. And the communication member 4 which connects the several flow path pipes 3 is formed by joining the flange parts 300 of the adjacent flow path pipes 3 by brazing.

  When the channel tube 3 disposed on the outermost side in the stacking direction among the plurality of channel tubes 3 is an outer channel tube 3a, both ends in the longitudinal direction of one outer channel tube 3a of the two outer channel tubes 3a. The unit is connected with a heat medium inlet 401 for introducing the heat medium into the laminated heat exchanger 1 and a heat medium outlet 402 for discharging the heat medium from the laminated heat exchanger 1, respectively. Yes. The heat medium introduction port 401 and the heat medium discharge port 402 are joined to one outer flow path pipe 3a by brazing. In addition, the flow path pipe 3, the communication member 4, the heat medium introduction port 401, and the heat medium discharge port 402 of this embodiment are made of aluminum.

  The heat medium introduced from the heat medium introduction port 401 flows into the flow channel pipes 3 from one end in the longitudinal direction through the communication member 4, and the inside of each heat medium flow channel 30 to the other end. It flows toward. The heat medium is discharged from the heat medium discharge port 402 through the communication member 4. As described above, while the heat medium flows through the heat medium flow path 30, heat exchange is performed with the electronic component 2 to cool the electronic component 2.

  As shown in FIG. 2, the inner fin 33 is a wave whose cross-sectional shape perpendicular to the flow direction of the heat medium, that is, the longitudinal direction of the flow channel tube 3 is bent with the convex portions alternately positioned on one side and the other side. It is formed into a shape. Specifically, the inner fin 33 includes a plate portion 331 that extends in the longitudinal direction of the flow channel tube and divides the narrow flow channel 333, and a connecting portion 332 that connects adjacent plate portions 331, and the longitudinal direction of the flow channel tube. A straight fin having a cross-sectional shape orthogonal to the shape of a trapezoidal wave.

  The inner fins 33 are stacked in three stages in one flow path tube 3 in the arrangement direction of the flow path tubes 3 and the electronic components, that is, in the stacking direction of the flow path tubes 3. In the present embodiment, the inner fins 33 at each stage are formed as separate bodies.

  Here, of the three-stage inner fins 33, the two inner fins 33 that are located closest to the electronic component 2 and that are adjacent to the outer shell plate 31 are referred to as outer inner fins 33A. One inner fin 33 disposed between them is referred to as an inner inner fin 33B. For this reason, two outer inner fins 33 </ b> A and one inner inner fin 33 </ b> B are provided in one channel pipe 3.

  Further, in the cross-sectional shape perpendicular to the longitudinal direction of the flow path pipe of the inner fin 33, the distance between the convex portions adjacent on the same side of one side and the other side, that is, the centers of the connecting portions 332 is referred to as a fin pitch FP. The fin pitch FP1 of the outer inner fin 33A is coarser than the fin pitch FP2 of the inner inner fin 33B. In the present embodiment, the fin pitch FP1 of the outer inner fin 33A is approximately twice the fin pitch FP2 of the inner inner fin 33B.

  As described above, by narrowing the fin pitch FP1 of the outer inner fin 33A than the fin pitch FP2 of the inner inner fin 33B, the narrow channel 333 divided by the outer inner fin 33A (hereinafter referred to as the outer narrow channel 333A). ) Is lower than the passage resistance of the heat medium in the narrow channel 333 divided by the inner inner fins 33B (hereinafter referred to as the inner narrow channel 333B). As a result, the flow rate of the heat medium in the outer narrow channel 333A is greater than the flow rate of the heat medium in the inner narrow channel 333B. That is, since the flow rate of the heat medium flowing into the narrow channel 333A on the side close to the electronic component 2 can be increased, it is possible to improve the heat exchange efficiency.

(Second Embodiment)
Next, a second embodiment of the present invention will be described with reference to FIG. In the second embodiment, the fin height FH of the inner fin 33 is different from that in the first embodiment. FIG. 3 is an enlarged cross-sectional view showing the vicinity of the flow path pipe 3 in the second embodiment, corresponding to FIG. 2 of the first embodiment.

  Here, the arrangement direction of the flow path tube 3 and the electronic component 2 in the inner fin 33, that is, the dimension in the flow path tube stacking direction is defined as the fin height FH. That is, the fin height FH refers to the distance from the convex portion on one side to the convex portion on the other side in the cross-sectional shape perpendicular to the longitudinal direction of the flow path pipe of the inner fin 33.

  As shown in FIG. 3, in the present embodiment, the fin height FH1 of the outer inner fin 33A is higher than the fin height FH2 of the inner inner fin 33B. In the present embodiment, the fin height FH1 of the outer inner fin 33A is 1.75 times the fin height FH2 of the inner inner fin 33B.

  As described above, by setting the fin height FH1 of the outer inner fin 33A higher than the fin height FH2 of the inner inner fin 33B, the heat medium passes through the outer narrow channel 333A divided by the outer inner fin 33A. The resistance is lower than the passage resistance of the heat medium in the inner narrow channel 333B divided by the inner inner fins 33B. Thereby, since the flow rate of the heat medium in the outer narrow channel 333A is larger than the flow rate of the heat medium in the inner narrow channel 333B, the same effect as in the first embodiment can be obtained.

(Third embodiment)
Next, a third embodiment of the present invention will be described with reference to FIG. The third embodiment is different from the first embodiment in the number of stacked layers of the inner fins 33. FIG. 4 is an enlarged cross-sectional view showing the vicinity of the flow path pipe 3 in the third embodiment, and corresponds to FIG. 2 of the first embodiment.

  As shown in FIG. 4, in this embodiment, the inner fins 33 are arranged in four stages in one flow path pipe 3 in the arrangement direction of the flow path pipe 3 and the electronic component, that is, in the stacking direction of the flow path pipe 3. Are stacked.

  More specifically, an outer inner fin 33 </ b> A is provided on the side closest to the electronic component 2 in one flow path tube 3. The outer inner fins 33 </ b> A are arranged one by one so as to be adjacent to each of the outer shell plates 31. Therefore, two outer inner fins 33 </ b> A are arranged in one flow path pipe 3. Further, two inner inner fins 33B are disposed between the two outer inner fins 33A.

  Similar to the first embodiment, the fin pitch FP1 of the outer inner fin 33A is coarser than the fin pitch FP2 of the inner inner fin 33B. In the present embodiment, the fin pitch FP1 of the outer inner fin 33A is approximately twice the fin pitch FP2 of the inner inner fin 33B.

  According to the present embodiment, the passage resistance of the heat medium in the outer narrow channel 333A divided by the outer inner fin 33A is lower than the passage resistance of the heat medium in the inner narrow channel 333B divided by the inner inner fin 33B. Thereby, since the flow rate of the heat medium in the outer narrow channel 333A is larger than the flow rate of the heat medium in the inner narrow channel 333B, the same effect as in the first embodiment can be obtained.

(Fourth embodiment)
Next, a fourth embodiment of the present invention will be described with reference to FIG. The fourth embodiment is different from the first embodiment in the arrangement of the electronic components 2 and the number of stacked layers of the inner fins 33. FIG. 5 is an enlarged cross-sectional view showing the vicinity of the flow path pipe 3 in the fourth embodiment, which corresponds to FIG. 2 of the first embodiment.

  As shown in FIG. 5, in the present embodiment, the electronic component 2 is arranged so as to contact only one surface of the flow channel tube 3. That is, the electronic component 2 is in contact with only one outer shell plate 31 of the pair of outer shell plates 31 of one flow channel tube 3.

  The inner fins 33 are stacked in two stages in one flow path pipe 3 in the arrangement direction of the flow path pipe 3 and the electronic component, that is, in the stacking direction of the flow path pipe 3. Here, of the two-layered inner fins 33, the inner fin 33 located on the side closer to the electronic component 2 is referred to as a first inner fin 33C, and the inner fin 33 located on the side farther from the electronic component 2 is the second inner fin 33. It is called inner fin 33D. For this reason, one first inner fin 33 </ b> C and one second inner fin 33 </ b> D are provided in one flow path pipe 3.

  Further, the fin pitch FP1 of the first inner fin 33C is coarser than the fin pitch FP2 of the second inner fin 33D. In the present embodiment, the fin pitch FP1 of the outer inner fin 33A is approximately twice the fin pitch FP2 of the inner inner fin 33B.

  According to this embodiment, the passage resistance of the heat medium in the narrow channel 333 (hereinafter referred to as the first narrow channel 333C) divided by the first inner fin 33C is the narrow channel 333 (divided by the second inner fin 33D). Hereinafter, it becomes lower than the passage resistance of the heat medium in the second narrow channel 333D). Therefore, the flow rate of the heat medium in the first narrow channel 333C is larger than the flow rate of the heat medium in the second narrow channel 333D. That is, since the flow velocity of the heat medium flowing into the first narrow channel 333C on the side close to the electronic component 2 is increased, the heat exchange efficiency can be improved.

(Fifth embodiment)
Next, a fifth embodiment of the present invention will be described with reference to FIG. The fifth embodiment is different from the first embodiment in the formation method of the inner fins 33. FIG. 6 is an enlarged sectional view showing the inner fin 33 in the fifth embodiment.

  As shown in FIG. 6, the three-stage inner fins 33 of the present embodiment are formed by folding a single metal plate by providing two folded portions 35. Specifically, one metal plate is folded toward one side of the flow path pipe stacking direction at one of the two folded portions 35 and the other one of the two folded portions 35. The inner fins 33 that are stacked in three stages are formed by folding back toward the other side in the flow path tube stacking direction.

  In the present embodiment, since the three-stage inner fins 33 are formed by bending one metal plate, it is possible to reduce the number of parts while obtaining the same effects as in the first embodiment. .

(Sixth embodiment)
Next, a sixth embodiment of the present invention will be described with reference to FIGS. The sixth embodiment is different from the first embodiment in that wave fins are used as the inner fins 33. FIG. 7 is an enlarged cross-sectional view showing the vicinity of the flow path pipe 3 in the sixth embodiment, corresponding to FIG. 2 of the first embodiment.

  As shown in FIG. 7, the inner fin 33 according to the present embodiment connects the plate portion 331 that extends in the longitudinal direction of the flow channel (the flow direction of the heat medium) and divides the narrow flow channel 333 and the adjacent plate portion 331. The cross-sectional shape perpendicular to the longitudinal direction of the flow channel tube is wavy and has a plate portion when viewed from the flow channel stacking direction (the arrangement direction of the flow channel tube 3 and the electronic component 2). Reference numeral 331 denotes a wave fin that refracts into a wave shape in the flow direction of the heat medium. Thereby, mixing of the heat medium can be promoted by forming a heat medium flow in the flow path width direction in the flow path pipe 3.

  FIG. 8 is an enlarged cross-sectional view showing a cross section of the inner fin 33 in the sixth embodiment perpendicular to the flow channel stacking direction and passing through the central portion of the narrow flow channel 333 in the flow channel stacking direction. FIG. 8 (a) shows the outer inner fin 33A, and FIG. 8 (b) shows the inner inner fin 33B. Here, the wave pitch WP is the wave pitch of the plate portion 331 in the cross section of the inner fin 33 that is orthogonal to the channel tube stacking direction and passes through the center of the narrow channel 333 in the channel tube stacking direction. .

  As shown in FIG. 8, the wave pitch WP1 of the outer inner fin 33A is formed to be coarser than the wave pitch WP2 of the inner inner fin 33B. For this reason, the pressure loss generated in the heat medium flowing through the outer narrow channel 333A divided by the outer inner fin 33A is smaller than the pressure loss generated in the heat medium passing through the inner narrow channel 333B divided by the inner inner fin 33B. .

  Therefore, the flow rate of the heat medium in the outer narrow channel 333A is larger than the flow rate of the heat medium in the inner narrow channel 333B. That is, since the flow velocity of the heat medium flowing into the outer narrow channel 333A on the side close to the electronic component 2 is increased, the heat exchange efficiency can be improved.

(Seventh embodiment)
Next, a seventh embodiment of the present invention will be described with reference to FIG. The seventh embodiment is different from the sixth embodiment in the wave depth WD of the inner fin 33.

  FIG. 9 is an enlarged cross-sectional view showing a cross section of the inner fin 33 in the seventh embodiment perpendicular to the flow channel stacking direction and passing through the central portion of the narrow flow channel 333 in the flow channel stacking direction. 9A shows the outer inner fin 33A, and FIG. 9B shows the inner inner fin 33B. Here, the dimension in the amplitude direction of the wave shape of the plate portion 331 in the cross section of the inner fin 33 perpendicular to the flow channel stacking direction and passing through the central portion of the narrow flow channel 333 in the flow channel stacking direction is defined as the wave depth. WD.

  As shown in FIG. 9, the wave depth WD1 of the outer inner fin 33A is formed shallower than the wave depth WD2 of the inner inner fin 33B. For this reason, the pressure loss generated in the heat medium flowing through the outer narrow channel 333A is larger than the pressure loss generated in the heat medium passing through the inner narrow channel 333B.

  Therefore, the flow rate of the heat medium in the outer narrow channel 333A is larger than the flow rate of the heat medium in the inner narrow channel 333B. That is, since the flow velocity of the heat medium flowing into the outer narrow channel 333A on the side close to the electronic component 2 is increased, the heat exchange efficiency can be improved.

(Eighth embodiment)
Next, an eighth embodiment of the present invention will be described with reference to FIGS. The eighth embodiment includes a semiconductor mounting body in which the heat exchanger of the present invention is formed by sealing a semiconductor element as a heat exchange object with a heat dissipation metal body connected by a sealing material, This is applied to a heat exchanger in which the heat radiating surface of the metal body is cooled by a heat medium.

  FIG. 10 is an exploded perspective view showing the heat exchanger according to the eighth embodiment, and FIG. 11 is a cross-sectional view showing the heat exchanger according to the eighth embodiment. As shown in FIG. 11, the semiconductor mounting body 51 is interposed between a first semiconductor chip 511 and a second semiconductor chip 512 as semiconductor elements, a lower heat sink 520 and an upper heat sink 530 as metal bodies. Each solder 541 and 542 as a conductive bonding member and a mold resin 550 as a sealing material are further provided.

  In the semiconductor mounting body 51 of the present embodiment, the first semiconductor chip 511 and the second semiconductor chip 12 are arranged in parallel in the planar direction. In FIG. 11, two semiconductor chips are provided, but one semiconductor chip may be provided, or three or more semiconductor chips may be provided.

  A back surface of each of the semiconductor chips 511 and 512 (right surface in FIG. 11) and a top surface of the lower heat sink 520 are joined by a first solder 541. Further, the surfaces of the respective semiconductor chips 511 and 512 (the left surface in FIG. 11) and the lower surface of the upper heat sink 530 are joined by the second solder 542. In the present embodiment, as these solders 541 and 542, various commonly used solders, for example, lead-free solders such as Sn-Pb solder and Sn-Ag solder can be employed. .

  Thereby, in the above-described configuration, heat is radiated on the surfaces of the first semiconductor chip 511 and the second semiconductor chip 512 via the second solder 542 and the upper heat sink 530, and the first semiconductor chip 511 and the second semiconductor chip On the back surface of 512, heat is radiated from the first solder 541 through the lower heat sink 520.

  As described above, the lower heat sink 520 and the upper heat sink 530 are configured as metal bodies that are thermally connected to the first semiconductor chip 511 and the second semiconductor chip 512 and transmit heat from the semiconductor chips 511 and 512. Yes. In the lower heat sink 520, the right surface in FIG. 11 is configured as a heat dissipation surface 521, and in the upper heat sink 530, the left surface in FIG. 11 is configured as a heat dissipation surface 531. The heat radiating surfaces 521 and 531 are exposed from the mold resin 550.

  Here, the first semiconductor chip 11 is not particularly limited, but can be constituted by, for example, a power semiconductor element such as an IGBT (insulated gate bipolar transistor) or a thyristor. Similarly, the second semiconductor chip 512 can be made of, for example, an FWD (free wheel diode). Specifically, the shapes of the first semiconductor chip 511 and the second semiconductor chip 512 can be, for example, rectangular thin plates.

  Further, electrodes (not shown) are formed on the front and back surfaces of the semiconductor chips 511 and 512 of the present embodiment. The electrodes are electrically connected to the solders 541 and 542.

  Thus, in the present embodiment, the electrodes on the back surfaces of the first semiconductor chip 511 and the second semiconductor chip 512 are electrically connected to the lower heat sink 520 via the first solder 541, and the first The electrodes on the surface side of the first semiconductor chip 511 and the second semiconductor chip 512 are electrically connected to the upper heat sink 530 via the second solder 542.

  Here, the lower heat sink 520 and the upper heat sink 530 are made of a metal having good thermal conductivity and electrical conductivity, such as a copper alloy or an aluminum alloy. Further, the lower heat sink 520 and the upper heat sink 530 can be, for example, substantially rectangular plate materials as a whole.

  In the heat exchanger of this embodiment, the heat radiation surfaces 521 and 531 of the heat sinks 520 and 530 in the semiconductor mounting body 51 having the above-described configuration are cooled by the heat medium. Therefore, the heat radiation surfaces 521 and 531 of the heat sinks 520 and 530 correspond to the heat exchange object of the present invention.

  As shown in FIG. 11, in the heat exchanger of the present embodiment, a part of the mold resin 550 in the semiconductor mounting body 51 is configured as the heat medium flow path 30 through which the heat medium refrigerant flows. The mold resin 550 includes a sealing portion 551 that seals the semiconductor chips 511 and 512 and the heat sinks 520 and 530, and a tip portion that is provided around the sealing portion 551 than the heat radiation surfaces 521 and 531 of the heat sinks 520 and 530. It is comprised from the wall part 552 which protrudes. In the present embodiment, the wall portion 552 is provided in an annular shape so as to surround the heat dissipation surfaces 521 and 531.

  Further, a through hole 553 is provided in a portion of the sealing portion 551 between the heat radiation surfaces 521 and 531 of the heat sinks 520 and 530 and the wall portion 552, and the through hole 553 is configured as the heat medium flow path 30. Has been.

  As shown in FIG. 10, the heat exchanger of the present embodiment is configured as a plurality of semiconductor mounting bodies 51 connected together. Specifically, a plurality (three in the illustrated example) of the semiconductor mounting bodies 51 are stacked and connected, and the respective through holes 553 communicate with each other.

  A first lid member 60 having an inlet 61 and an outlet 62 for the heat medium is connected to the semiconductor mounting body 51 on one end side of the stacked body, and the inlet 61 and the outlet 62 and the through hole 553 communicate with each other. . Further, the second lid member 70 is connected to the semiconductor mounting body 51 on the other end side in the stacked body, and the through hole 553 is closed by the second lid member 70. In this way, the inlet 61, the outlet 62 and the through hole 553 are connected, and the heat medium flowing in from the inlet 61 flows out of the outlet 62 through the through hole 553.

  In addition, the connection of each semiconductor mounting body 51 and the connection of the semiconductor mounting body 51 and the lid members 60 and 70 are performed on the end surface of the wall portion 552, and each connection in the wall portion 552 is not illustrated. It is performed by adhesion via an adhesive. In addition, both the lid members 60 and 70 can be formed from a material such as resin, metal, or ceramic by molding, pressing, or the like.

  Here, in the plurality of stacked semiconductor mounting bodies 51, the heat radiating surfaces 521 and 531 are arranged to face each other, and the space between the facing heat radiating surfaces 521 and 531 is also used as the heat medium flow path 30. The medium is flowing. Further, the heat medium flow path 30 is also formed between the heat radiation surfaces 521 and 531 of the semiconductor mounting body 51 and the lid members 60 and 70. Therefore, the opposing heat radiating surfaces 521 and 531, the mold resin 550 and the lid members 60 and 70 correspond to the flow path forming member of the present invention.

  A plurality of heat medium channels 30 formed between adjacent semiconductor mounting bodies 51 and between the semiconductor mounting body 51 and the lid members 60 and 70 are provided on the surfaces of the heat radiation surfaces 521 and 531 of the heat sinks 520 and 530. Inner fins 33 are provided that are divided into narrow channels and promote heat exchange between the heat medium and the heat radiation surfaces 521 and 531 of the heat sinks 520 and 530. In the present embodiment, straight fins are used as the inner fins 33.

  More specifically, the inner fins 33 are stacked in three layers in the stacking direction of the semiconductor mounting bodies 51 between the adjacent semiconductor mounting bodies 51. That is, the inner fins 33 are stacked in three layers in the stacking direction of the semiconductor mounting bodies 51 between the heat radiation surfaces 521 and 531 of the adjacent semiconductor mounting bodies 51 facing each other.

  Here, of the three-stage inner fins 33, the two inner fins 33 that are located closest to the heat radiation surfaces 521 and 523 and that are adjacent to the heat radiation surfaces 521 and 531 are referred to as outer inner fins 33A. One inner fin 33 disposed between the fins 33A is referred to as an inner inner fin 33B. For this reason, two outer inner fins 33 </ b> A and one inner inner fin 33 </ b> B are provided between adjacent semiconductor mounting bodies 51. Further, the fin pitch of the outer inner fin 33A is coarser than the fin pitch of the inner inner fin 33B.

  In addition, the inner fins 33 are stacked in two layers in the stacking direction of the semiconductor mounting body 51 between the semiconductor mounting body 51 and the lid members 60 and 70. That is, two inner fins 33 are arranged in the stacking direction of the semiconductor mounting body 51 between the heat radiation surfaces 521 and 531 of the semiconductor mounting body 51 and the lid members 60 and 70 disposed at both ends in the stacking direction of the semiconductor mounting body 51. It is layered.

  Here, among the two-layered inner fins 33, the inner fin 33 located on the side closer to the heat radiation surfaces 521 and 531 is referred to as a first inner fin 33C, and the inner fin located on the side far from the heat radiation surfaces 521 and 531. 33 is referred to as a second inner fin 33D. For this reason, one first inner fin 33 </ b> C and one second inner fin 33 </ b> D are provided between the semiconductor mounting body 51 and the lid members 60 and 70. The fin pitch of the first inner fin 33C is coarser than that of the second inner fin 33D.

  As described above, the outer inner fin 33A adjacent to the heat radiating surfaces 521 and 531 has a fin pitch coarser than the fin pitch of the inner inner fins 33B disposed on the side far from the heat radiating surfaces 521 and 531. The passage resistance of the heat medium in the outer narrow channel (not shown) divided by the fins 33A is lower than the resistance of the heat medium in the inner narrow channel (not shown) divided by the inner inner fins 33B. Thereby, the flow rate of the heat medium in the outer narrow channel is larger than the flow rate of the heat medium in the inner narrow channel. That is, since the flow rate of the heat medium flowing into the narrow flow path near the heat radiating surfaces 521 and 531 can be increased, the heat exchange efficiency can be improved.

  Furthermore, in the present embodiment, the fin pitch of the first inner fins 33C adjacent to the heat radiating surfaces 521 and 531 is made coarser than the fin pitch of the second inner fins 33D disposed on the side far from the heat radiating surfaces 521 and 531. The passage resistance of the heat medium in the first narrow channel (not shown) divided by the first inner fin 33C is the passage of the heat medium in the second narrow channel (not shown) divided by the second inner fin 33D. Lower than resistance. Thereby, the flow rate of the heat medium in the first narrow channel becomes larger than the flow rate of the heat medium in the second narrow channel. That is, since the flow rate of the heat medium flowing into the narrow flow path near the heat radiating surfaces 521 and 531 can be increased, the heat exchange efficiency can be further improved.

(Other embodiments)
As mentioned above, although embodiment of this invention was described, this invention is not limited to this, Unless it deviates from the range described in each claim, it is not limited to the wording of each claim, and those skilled in the art Improvements based on the knowledge that a person skilled in the art normally has can be added as appropriate to the extent that they can be easily replaced. For example, various modifications are possible as follows.

  (1) In the first to seventh embodiments, the example in which the electronic component 2 is adopted as the heat exchange object has been described, but the heat exchange object is not limited to this. For example, an outer fin that is joined to the outer surface of the flow channel tube 3 and increases the heat transfer area between the flow channel tube 3 and the external fluid (air) flowing outside the flow channel tube 3 is adopted as a heat exchange object. May be.

  (2) In the first to seventh embodiments, as the heat exchanger, the flow path pipe 3 has a so-called drone cup structure, and the flange portions 300 of the adjacent flow path pipes 3 are joined to each other by brazing. Although the example which employ | adopted the laminated heat exchanger 1 which formed the communication member 4 which connects the flow-path pipe | tube 3 was demonstrated, a heat exchanger is not limited to this. For example, it has so-called a plurality of tubes as flow path forming members, a pair of collective distribution tanks that are arranged at both ends of the plurality of tubes, and perform collection or distribution of heat mediums that circulate through the tubes. A tank-and-tube heat exchanger may be adopted as the heat exchanger.

  (3) In the first to seventh embodiments, the example in which a plurality of flow path tubes 3 are provided has been described. However, the present invention is not limited to this, and the number of flow path tubes 3 may be one.

  (4) In the third embodiment, the example in which the inner fins 33 are stacked in four stages has been described. However, the present invention is not limited thereto, and the inner fins 33 may be stacked in five or more stages.

  (5) In the eighth embodiment, the example in which the three inner fins 33 are stacked between the adjacent semiconductor mounting bodies 51 has been described. However, the present invention is not limited to this, and four or more inner fins 33 are stacked. You may do it. In the eighth embodiment, the example in which the two inner fins 33 are stacked between the semiconductor mounting body 51 and the lid members 60 and 70 has been described. However, the present invention is not limited to this, and the inner fins 33 have three or more stages. You may laminate.

  (6) Each above-mentioned embodiment can be suitably combined in the possible range.

2 Electronic components (objects for heat exchange)
3 Channel pipe (channel forming member)
30 Heat medium flow path 33 Inner fin 33A Outer inner fin 33B Inner inner fin 331 Plate part 332 Connection part 333 Narrow flow path

Claims (5)

A flow path forming member (3) having a heat medium flow path (30) through which the heat medium flows;
A heat exchanger that performs heat exchange between the heat medium and a heat exchange object (2) disposed outside or inside the heat medium flow path (30),
In the flow path forming member (3), the heat medium flow path (30) is divided into a plurality of narrow flow paths (333), and heat exchange between the heat medium and the heat exchange object (2) is performed. Inner fins (33) to promote are provided,
The inner fin (33) is laminated in a plurality of stages in the arrangement direction of the flow path forming member (3) and the heat exchange object (2),
Among the plurality of inner fins (33), the passage resistance of the heat medium in the inner fin (33A) located on the side closest to the heat exchange object (2) is the other inner fin (33B). A heat exchanger characterized by being lower than the passage resistance of the heat medium. The inner fin (33) has a cross-sectional shape perpendicular to the flow direction of the heat medium, and is formed into a wave shape that bends with convex portions positioned alternately on one side and the other side,
In the cross-sectional shape, when the distance between the centers of the convex portions adjacent on the same side of the one side and the other side is a fin pitch (FP),
Of the plurality of inner fins (33), the fin pitch (FP) of the inner fin (33A) located on the side closest to the heat exchange object (2) is the other inner fin (33B). The heat exchanger according to claim 1, wherein the heat exchanger is coarser than the fin pitch (FP). The inner fin (33) has a cross-sectional shape perpendicular to the flow direction of the heat medium, and is formed into a wave shape that bends with convex portions positioned alternately on one side and the other side,
When the dimension in the arrangement direction of the inner fin (33) is the fin height (FH),
Of the plurality of inner fins (33), the fin height (FH) of the inner fin (33A) located on the side closest to the heat exchange object (2) is the other inner fin (33B). The heat exchanger according to claim 1 or 2, wherein the fin height (FH) is higher than the fin height (FH). The inner fin (33) includes a plate portion (331) that extends in the flow direction of the heat medium and divides the narrow channel (333), and a connecting portion (332) that connects between the adjacent plate portions (331). And the cross-sectional shape perpendicular to the flow direction of the heat medium has a wave shape, and the plate portion (331) is refracted in a wave shape in the flow direction of the heat medium when viewed from the arrangement direction. And
The dimension in the amplitude direction of the wave shape of the plate part (331) in the cross section orthogonal to the arrangement direction of the inner fin (33) and passing through the central part of the arrangement direction in the narrow channel (333). Is the wave depth (WD),
Of the plurality of inner fins (33), the wave depth (WD) of the inner fin (33A) located on the side closest to the heat exchange object (2) is the other inner fin (33B). 4. The heat exchanger according to claim 1, wherein the heat exchanger is shallower than the wave depth (WD). The inner fin (33) includes a plate portion (331) that extends in the flow direction of the heat medium and divides the narrow channel (333), and a connecting portion (332) that connects between the adjacent plate portions (331). And the cross-sectional shape perpendicular to the flow direction of the heat medium has a wave shape, and the plate portion (331) is refracted in a wave shape in the flow direction of the heat medium when viewed from the arrangement direction. And
The pitch of the wave shape of the plate portion (331) in a cross section orthogonal to the arrangement direction of the inner fin (33) and passing through the central portion of the arrangement direction in the narrow channel (333) is a wave pitch. (WP)
Of the plurality of inner fins (33), the wave pitch (WP) of the inner fin (33A) located on the side closest to the heat exchange object (2) is the other inner fin (33B). The heat exchanger according to any one of claims 1 to 4, wherein the heat exchanger is coarser than the wave pitch (WP).

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