JP2012146868A - Processing device - Google Patents

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JP2012146868A
JP2012146868A JP2011005089A JP2011005089A JP2012146868A JP 2012146868 A JP2012146868 A JP 2012146868A JP 2011005089 A JP2011005089 A JP 2011005089A JP 2011005089 A JP2011005089 A JP 2011005089A JP 2012146868 A JP2012146868 A JP 2012146868A
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workpiece
thickness
grinding
grindstone
reinforcing portion
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Keiko Yamagishi
桂子 山岸
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Disco Corp
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Disco Abrasive Systems Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide a processing device capable of reliably measuring thickness of a workpiece regardless of a kind of a workpiece.SOLUTION: A processing device 10 presses a lower surface 37a of a grindstone 37 to an upper surface 4a of a ring reinforcing part 4 of a workpiece 1 held by holding means 20, and grinds it. Height of the lower surface 37a of the grindstone 37 is detected by measurement means 50, and the thickness of a workpiece 1 is measured while a height position of the lower surface 37a is a height position of an upper surface 4a of the workpiece 1.

Description

本発明は、半導体ウェーハ等の薄板状のワークを研削する加工装置に関する。   The present invention relates to a processing apparatus for grinding a thin plate-like workpiece such as a semiconductor wafer.

半導体デバイスの製造プロセスでは、デバイスの目的厚さを得るために、多数のデバイスに分割される前のウェーハの段階で裏面を研削して薄化することが一般に行われている。ウェーハの研削は厚さを測定しながら進められるが、そのような形態での厚さ測定の手段としては、測定用のプローブを被加工面に接触させながら厚さの変位を検出する接触式のものが知られている(特許文献1)。   In the manufacturing process of a semiconductor device, in order to obtain a target thickness of a device, it is generally performed by grinding and thinning the back surface at the stage of a wafer before being divided into a large number of devices. Wafer grinding proceeds while measuring the thickness, but as a means of measuring the thickness in such a form, a contact type that detects the displacement of the thickness while bringing the measuring probe into contact with the work surface. One is known (Patent Document 1).

一方、近年ではデバイスの顕著な薄型化に応じてウェーハは一層薄く加工されているが、薄くすると剛性が低下するため、薄化後の工程でのハンドリングが困難になったり割れやすくなったりする問題が生じる。そこで、多数のデバイスが形成されている円形状のデバイス形成領域を裏面側から研削して目的厚さに薄化し、外周部は比較的肉厚としてウェーハ全体を裏面側がへこんだ断面略凹状に加工することが行われている(特許文献2)。このようなウェーハは、肉厚の外周部がリング補強部となって剛性が確保され、ハンドリングしやすくなり、また、割れにくいものとなる。   On the other hand, in recent years, wafers have been processed even thinner due to the remarkable thinning of devices. However, since the rigidity decreases when the thickness is reduced, handling in the process after thinning becomes difficult or easily broken. Occurs. Therefore, the circular device formation area where a large number of devices are formed is ground from the back side to the desired thickness, and the outer peripheral part is relatively thick, and the entire wafer is processed into a substantially concave shape with the back side recessed. (Patent Document 2). In such a wafer, a thick outer peripheral portion serves as a ring reinforcing portion to ensure rigidity, and it is easy to handle and difficult to break.

特開2000−6018号公報JP 2000-6018 A 特開2007−19461号公報JP 2007-19461 A

上記の断面略凹状に加工されたウェーハは、最終的には外周部のリング補強部も研削されて除去される。したがってその研削時において上記接触式の厚さ測定手段のプローブは、リング補強部の裏面に接触した状態で用いられる。そのため、リング補強部はプローブを確実に接触させるためにある程度の幅が確保されていることが必要となるが、リング補強部の幅を大きくするとデバイス形成領域が縮小して1枚のウェーハからのデバイスの取得数が減少してしまうので、リング補強部の幅はできるだけ小さい方が好ましい。しかしながらリング補強部の幅が小さいとプローブを確実に接触させにくくなり、厚さ測定が困難になるという不具合を招く。また、光学式の非接触式厚さ測定手段を用いた場合は、ワークの検出面が十分に検出光を反射しない場合には測定が困難になるという問題が生じる。このように従来では、厚さ測定手段が接触式あるいは非接触式であっても、ワークの種類によっては厚さを測定することが困難な場合があった。   The wafer processed into the substantially concave shape in the cross section is finally ground and removed from the ring reinforcing portion on the outer peripheral portion. Therefore, at the time of grinding, the probe of the contact-type thickness measuring means is used in contact with the back surface of the ring reinforcing portion. Therefore, it is necessary for the ring reinforcing portion to have a certain width in order to ensure contact with the probe. However, if the width of the ring reinforcing portion is increased, the device formation area is reduced and the width of the device is reduced from one wafer. Since the number of acquired devices is reduced, the width of the ring reinforcing portion is preferably as small as possible. However, if the width of the ring reinforcing portion is small, it is difficult to make the probe surely contact with each other, which causes a problem that thickness measurement becomes difficult. Further, when the optical non-contact thickness measuring means is used, there arises a problem that measurement becomes difficult when the detection surface of the workpiece does not sufficiently reflect the detection light. Thus, conventionally, even if the thickness measuring means is a contact type or a non-contact type, it may be difficult to measure the thickness depending on the type of workpiece.

本発明は上記事情に鑑みてなされたものであり、その主たる技術的課題は、ワークの種類によらずワークの厚さを確実に測定することができる加工装置を提供することにある。   The present invention has been made in view of the above circumstances, and a main technical problem thereof is to provide a machining apparatus capable of reliably measuring the thickness of a workpiece regardless of the type of the workpiece.

本発明の加工装置は、ワークの表面側を保持する保持手段と、該保持手段に保持されたワーク上面に砥石の下面を押し当てて研削加工する工具と、該工具を回転可能に支持するスピンドルとを有する研削手段と、研削中にワークの厚さを測定する測定手段と、を有する加工装置であって、前記測定手段は、前記砥石の下面の高さ位置を検出し、該砥石の下面の高さ位置をワーク上面高さ位置としてワークの厚さを測定することを特徴とする。   The processing apparatus of the present invention includes a holding means for holding the surface side of a workpiece, a tool for pressing the lower surface of the grindstone against the upper surface of the workpiece held by the holding means, and a spindle for rotatably supporting the tool And a measuring device for measuring the thickness of the workpiece during grinding, wherein the measuring means detects the height position of the lower surface of the grindstone, and the lower surface of the grindstone The thickness of the workpiece is measured with the height position of the workpiece as the height position of the workpiece upper surface.

本発明によれば、測定手段は、ワークの上面に接触して該上面を研削する砥石の下面の高さ位置に基づいてワークの厚さを測定するため、ワークの上面の大きさや形状あるいは光反射状況といった従来の厚さ測定手段では測定困難を招く種々の要素に関係なくワークの厚さを測定することができる。   According to the present invention, the measuring means measures the thickness of the workpiece based on the height position of the lower surface of the grindstone that contacts the upper surface of the workpiece and grinds the upper surface. The thickness of the workpiece can be measured regardless of various factors that cause measurement difficulty by the conventional thickness measuring means such as the reflection state.

本発明では、ワークはデバイス形成領域に対応する裏面が研削され外周にリング補強部が形成されており、ワーク上面は前記リング補強部の上面であり、ワークの厚さは前記リング補強部の厚さである形態を含む。この形態では、リング補強部の幅が狭くても該リング補強部の厚さを確実に測定することができる。   In the present invention, the work has a back surface corresponding to the device formation region ground to form a ring reinforcing portion on the outer periphery, the work upper surface is the upper surface of the ring reinforcing portion, and the thickness of the work is the thickness of the ring reinforcing portion. Including the form that is. In this embodiment, even if the width of the ring reinforcing portion is narrow, the thickness of the ring reinforcing portion can be reliably measured.

なお、本発明で言うワークは特に限定はされないが、例えば、シリコン、ガリウムヒ素(GaAs)、シリコンカーバイド(SiC)等からなる半導体ウェーハ、セラミック、ガラス、サファイア(Al)系の無機材料基板、板状金属や樹脂の延性材料、ミクロンオーダーからサブミクロンオーダーの平坦度(TTV:total thickness variation−ワークの被加工面を基準として厚さ方向に測定した高さのワークの被加工面全面における最大値と最小値の差)が要求される各種加工材料等が挙げられる。 The work referred to in the present invention is not particularly limited. For example, semiconductor wafers made of silicon, gallium arsenide (GaAs), silicon carbide (SiC), etc., ceramics, glass, sapphire (Al 2 O 3 ) -based inorganic materials Substrate, plate-like metal or resin ductile material, flatness of micron order to submicron order (TTV: total thickness variation-the entire work surface of the workpiece measured in the thickness direction based on the work surface of the work Examples of various processing materials that require a difference between the maximum value and the minimum value).

本発明によれば、ワークの種類によらずワークの厚さを確実に測定することができる加工装置が提供されるといった効果を奏する。   According to the present invention, there is an effect that a machining apparatus capable of reliably measuring the thickness of a workpiece regardless of the type of workpiece is provided.

本発明の一実施形態に係る加工装置で裏面研削されるワークの(a)裏面側を示す斜視図、(b)表面側を示す平面図、(c)裏面側を上にした断面図である。BRIEF DESCRIPTION OF THE DRAWINGS (a) The perspective view which shows the back surface side of the workpiece | work ground by the processing apparatus which concerns on one Embodiment of this invention, (b) The top view which shows the surface side, (c) It is sectional drawing which turned up the back side. . 一実施形態に係る加工装置の全体斜視図である。1 is an overall perspective view of a processing apparatus according to an embodiment. 同加工装置でワークの厚さを測定しながらワークを研削している状態を示す側面図である。It is a side view which shows the state which grinds the workpiece | work while measuring the thickness of a workpiece | work with the same processing apparatus. 一実施形態に係る測定手段でワークの厚さを測定する原理を説明するための側面図である。It is a side view for demonstrating the principle which measures the thickness of a workpiece | work with the measurement means which concerns on one Embodiment.

以下、本発明の一実施形態に係る加工装置を説明する。
(1)ワーク
図1は、図2に示す本実施形態の加工装置10で裏面が研削される半導体ウェーハ等の円板状のワーク1を示している。まずこのワーク1を説明すると、図1(b)に示すように、ワーク1の表面1aには、電子回路が形成された多数のデバイス2が分割予定ライン3によって区画されている。ワーク1においては、外周を除く円形状の大部分が、製品として有効となる矩形状のデバイス2が形成されたデバイス形成領域2Aとなっている。この場合のワーク1は、図1(a),(c)に示すように、裏面1bのデバイス形成領域2Aに対応する部分が研削されて断面略凹状に形成されており、外周にはデバイス形成領域2Aよりも厚く裏面1b側に突出するリング補強部4が形成されている。ワーク1は、電子回路を保護する目的で表面1aに保護テープ5が貼着され(図1(b)では貼着されていない)、リング補強部4を保持することで搬送される。
Hereinafter, a processing apparatus according to an embodiment of the present invention will be described.
(1) Workpiece FIG. 1 shows a disk-shaped work 1 such as a semiconductor wafer whose back surface is ground by the processing apparatus 10 of this embodiment shown in FIG. First, the workpiece 1 will be described. As shown in FIG. 1B, a large number of devices 2 on which electronic circuits are formed are partitioned on the surface 1 a of the workpiece 1 by the division lines 3. In the workpiece 1, most of the circular shape excluding the outer periphery is a device formation region 2 </ b> A in which a rectangular device 2 that is effective as a product is formed. As shown in FIGS. 1A and 1C, the workpiece 1 in this case is formed in a substantially concave shape in cross section by grinding a portion corresponding to the device formation region 2A of the back surface 1b, and forming a device on the outer periphery. A ring reinforcing portion 4 that is thicker than the region 2A and protrudes toward the back surface 1b is formed. For the purpose of protecting the electronic circuit, the workpiece 1 is transported by holding the ring reinforcing portion 4 with the protective tape 5 attached to the surface 1a (not attached in FIG. 1B).

(2)加工装置
図2および図3により加工装置10を説明する。
加工装置10では、図2に示すように、上記ワーク1は、基台11上に設けられた円板状の保持手段20に対しオペレータ等によって矢印のように運ばれ、保持手段20の上面に形成された円形状の保持面21に、裏面1b側を上方に露出させ、かつ表面1a側が保護テープ5を介して同心状に載置される。
(2) Processing Device The processing device 10 will be described with reference to FIGS.
In the processing apparatus 10, as shown in FIG. 2, the workpiece 1 is conveyed by an operator or the like as indicated by an arrow to the disk-shaped holding means 20 provided on the base 11, and is placed on the upper surface of the holding means 20. On the formed circular holding surface 21, the back surface 1 b side is exposed upward, and the front surface 1 a side is placed concentrically via the protective tape 5.

保持手段20は、基台11上にX方向に移動可能に設けられた移動台22上に、Z方向(鉛直方向)を回転軸方向として回転可能に支持されている。保持手段20は一般周知の真空チャック式のもので、水平に設定される保持面21に負圧作用で保護テープ5を介してワーク1を吸着して保持する。   The holding means 20 is supported on a movable table 22 provided on the base 11 so as to be movable in the X direction so as to be rotatable about the Z direction (vertical direction) as the rotation axis direction. The holding means 20 is of a generally well-known vacuum chuck type, and holds and holds the workpiece 1 on the holding surface 21 set horizontally by negative pressure action via the protective tape 5.

保持手段20の保持面21に保持されたワーク1は、移動台22がX方向に移動することにより、図2において手前側(X1側)の搬入/搬出位置と後方(X2側)の加工位置との間を往復移動させられる。基台11には移動台22をX方向に移動させる移動機構が設けられており、移動台22には保持手段20を回転させる回転駆動機構が設けられている(いずれも図示略)。移動台22の移動方向の両側には、移動台22の移動路23を覆って研削屑等が基台11内に落下することを防ぐ伸縮自在な蛇腹状のカバー24が設けられている。   The workpiece 1 held on the holding surface 21 of the holding means 20 is moved in the X direction by the moving table 22, so that the front side (X1 side) loading / unloading position and the rear (X2 side) machining position in FIG. 2. Can be reciprocated between. The base 11 is provided with a moving mechanism for moving the moving base 22 in the X direction, and the moving base 22 is provided with a rotation driving mechanism for rotating the holding means 20 (all not shown). On both sides of the moving table 22 in the moving direction, a telescopic bellows-like cover 24 that covers the moving path 23 of the moving table 22 and prevents grinding scraps from falling into the base 11 is provided.

基台11の上記加工位置の後方には、コラム12が立設されている。コラム12の前面には、一対のZ軸ガイド13を介してスライダ14がZ方向に沿って昇降可能に取り付けられており、このスライダ14に、研削手段30が固定されている。   A column 12 is erected on the rear side of the processing position of the base 11. A slider 14 is attached to the front surface of the column 12 via a pair of Z-axis guides 13 so as to be movable up and down along the Z direction, and a grinding means 30 is fixed to the slider 14.

研削手段30は、軸方向がZ方向に延びるスピンドル31を有している。このスピンドル31は、円筒状のハウジング32内に回転軸33が組み込まれたものである。回転軸33の下端にはフランジ状のマウント34が形成されており、このマウント34に、研削用の工具35が着脱自在に固定されている。ハウジング32の上端部には、回転軸33を回転駆動するモータ部38が設けられている。   The grinding means 30 has a spindle 31 whose axial direction extends in the Z direction. The spindle 31 has a rotating shaft 33 incorporated in a cylindrical housing 32. A flange-shaped mount 34 is formed at the lower end of the rotating shaft 33, and a grinding tool 35 is detachably fixed to the mount 34. A motor unit 38 that rotationally drives the rotating shaft 33 is provided at the upper end of the housing 32.

工具35は、マウント34の下面に着脱可能に固定される研削ホイール36の下面の外周部に多数の砥石37が環状に配列されて固着されたものである。砥石37はワーク1に応じたものが用いられ、例えば、ダイヤモンドの砥粒をメタルボンドやレジンボンド等の結合剤で固めて成形したダイヤモンド砥石等が用いられる。工具35は、モータ部38によって上記回転軸33と一体に回転駆動される。   The tool 35 is a tool in which a number of grindstones 37 are annularly arranged and fixed to the outer peripheral portion of the lower surface of a grinding wheel 36 that is detachably fixed to the lower surface of the mount 34. The grindstone 37 corresponds to the workpiece 1, for example, a diamond grindstone formed by solidifying diamond abrasive grains with a binder such as metal bond or resin bond. The tool 35 is rotationally driven integrally with the rotary shaft 33 by the motor unit 38.

研削手段30は、マウント34を下方に配した状態で、ハウジング32がホルダ39を介してスライダ14に固定されている。スライダ14は、一対のZ軸ガイド13間に配設されてスライダ14に螺合した状態に連結されたZ方向に延びるボールねじ41と、ボールねじ41を回転駆動するモータ42とを備えた加工送り手段40によって昇降駆動される。すなわち、研削手段30は加工送り手段40によってスライダ14と一体に昇降する。   In the grinding means 30, the housing 32 is fixed to the slider 14 via the holder 39 with the mount 34 disposed below. The slider 14 is provided with a ball screw 41 that is disposed between the pair of Z-axis guides 13 and is coupled to the slider 14 so as to be screwed together, and a motor 42 that rotationally drives the ball screw 41. It is driven up and down by the feeding means 40. That is, the grinding means 30 is moved up and down integrally with the slider 14 by the processing feed means 40.

上記加工位置に位置付けられたワーク1は、上方に露出させられたリング補強部4の上面4aが、該リング補強部4が除去されるまで研削手段30により研削され、全体がデバイス形成領域2Aと同じ厚さになるよう加工される。研削手段30による研削は、保持手段20を一方向に回転させてワーク1を自転させ、モータ部38を作動させて工具35を回転させながら加工送り手段40によりスライダ14とともに研削手段30を下方に加工送りし、回転する工具35の砥石37の下面37aをリング補強部4の上面4aに押し当てることによりなされる。研削の際には、潤滑、冷却および清浄化等を目的として、図示せぬ研削液供給手段からワーク1に研削液が供給される。   The workpiece 1 positioned at the processing position is ground by the grinding means 30 until the upper surface 4a of the ring reinforcing portion 4 exposed upward is removed, and the whole is formed with the device forming region 2A. Processed to the same thickness. Grinding by the grinding means 30 rotates the holding means 20 in one direction to rotate the workpiece 1, operates the motor unit 38 to rotate the tool 35, and rotates the tool 35 together with the slider 14 by the work feeding means 40. It is made by pressing the lower surface 37a of the grindstone 37 of the tool 35 that feeds and rotates against the upper surface 4a of the ring reinforcing portion 4. In grinding, a grinding fluid is supplied to the workpiece 1 from a grinding fluid supply means (not shown) for the purpose of lubrication, cooling, cleaning, and the like.

この場合のワーク1の厚さはリング補強部4の厚さであり、該厚さは、加工位置の近傍であって基台11の上面の移動路23とコラム12との間に配設された測定手段50によって測定される。加工送り手段40による研削手段30の加工送り動作は、測定手段50で測定される厚さ測定値に基づいて制御される。厚さ測定値が目的値になったら研削動作を終了し、この後、移動台22がX1方向に移動してワーク1が上記搬入/搬出位置まで戻される。そしてワーク1は保持手段20から搬出され、次の工程(例えばデバイス2に分割する工程)に移される。   The thickness of the workpiece 1 in this case is the thickness of the ring reinforcing portion 4, and the thickness is disposed between the moving path 23 on the upper surface of the base 11 and the column 12 in the vicinity of the processing position. It is measured by the measuring means 50. The machining feed operation of the grinding means 30 by the machining feed means 40 is controlled based on the thickness measurement value measured by the measurement means 50. When the thickness measurement value reaches the target value, the grinding operation is terminated. Thereafter, the movable table 22 moves in the X1 direction, and the workpiece 1 is returned to the loading / unloading position. Then, the workpiece 1 is unloaded from the holding means 20 and moved to the next step (for example, the step of dividing the device 2).

(3)測定手段
次に、本発明に係る測定手段50について説明する。
測定手段50は、上記の通り基台11の上面における移動路23とコラム12との間に配設されているが、図3に示すように測定手段50は研削ホイール36の砥石37の直下に当たる位置に位置付けられている。測定手段50は、検出光線を測定対象物に照射して測定対象物からの反射光を受光し、受光した光を評価・演算して距離に換算する一般周知の非接触式で光学式の距離センサである。本実施形態では測定対象物は砥石37の下面37aであり、検出光線は鉛直上方の該下面37aに向けて照射される。
(3) Measuring means Next, the measuring means 50 according to the present invention will be described.
The measuring means 50 is disposed between the moving path 23 and the column 12 on the upper surface of the base 11 as described above, but the measuring means 50 is directly below the grindstone 37 of the grinding wheel 36 as shown in FIG. Is positioned. The measuring means 50 irradiates the measurement object with the detection light beam, receives the reflected light from the measurement object, evaluates and calculates the received light, and converts it into a distance by a generally known non-contact optical distance. It is a sensor. In this embodiment, the object to be measured is the lower surface 37a of the grindstone 37, and the detection light beam is irradiated toward the lower surface 37a vertically above.

測定手段50においては、図4に示すように、測定手段50から砥石37の下面37aに向けて鉛直上方に検出光線Lが照射される。そしてワーク1のリング補強部4の上面4aに押し当てられている砥石37の下面37aの高さ位置までの距離Dが、砥石37の下面37aの高さ位置として検出される。そしてこの砥石37の下面37aの高さ位置をワーク1の上面高さ位置としてワーク1の厚さが測定される。すなわち、図4に示すように、上記距離Dと、一定値である測定手段50から保持手段20の保持面21の高さ位置までの距離H、および把握されている保護テープ5の厚さPに基づいて、研削中のワーク1の厚さTが求められる。具体的には、ワーク1の厚さT=D−(H+P)で求められる。このようにして、研削中においてしだいに減少していくワーク1のリング補強部4の厚さが測定手段50によって逐一測定され、その厚さがデバイス形成領域2Aの厚さに達したら研削を終える。   In the measurement means 50, as shown in FIG. 4, the detection light beam L is irradiated vertically upward from the measurement means 50 toward the lower surface 37a of the grindstone 37. Then, the distance D to the height position of the lower surface 37a of the grindstone 37 pressed against the upper surface 4a of the ring reinforcing portion 4 of the workpiece 1 is detected as the height position of the lower surface 37a of the grindstone 37. Then, the thickness of the workpiece 1 is measured with the height position of the lower surface 37 a of the grindstone 37 as the upper surface height position of the workpiece 1. That is, as shown in FIG. 4, the distance D, the distance H from the measurement means 50 that is a constant value to the height position of the holding surface 21 of the holding means 20, and the thickness P of the protective tape 5 that is grasped. Based on the above, the thickness T of the workpiece 1 being ground is determined. Specifically, the thickness of the work 1 is obtained by T = D− (H + P). In this way, the thickness of the ring reinforcing portion 4 of the workpiece 1 that gradually decreases during grinding is measured one by one by the measuring means 50, and the grinding is finished when the thickness reaches the thickness of the device forming region 2A. .

本実施形態の加工装置10の測定手段50によれば、ワーク1のリング補強部4の上面4aに接触して該上面4aを研削する砥石37の下面37aの高さ位置に基づいてワーク1の厚さを測定している。このため、リング補強部4の幅が小さくて例えば接触式の厚さ測定手段のプローブを接触させることが困難な場合にも、ワーク1の厚さを確実に測定することができる。その結果、デバイス形成領域2Aをできるだけ大きくして1枚のワークからデバイスの取得数を増大させることに寄与することができる。   According to the measuring means 50 of the processing apparatus 10 of the present embodiment, the workpiece 1 is adjusted based on the height position of the lower surface 37a of the grindstone 37 that contacts the upper surface 4a of the ring reinforcing portion 4 of the workpiece 1 and grinds the upper surface 4a. The thickness is measured. For this reason, even when the width of the ring reinforcing portion 4 is small and it is difficult to contact the probe of the contact-type thickness measuring means, for example, the thickness of the workpiece 1 can be reliably measured. As a result, it is possible to contribute to increasing the number of devices acquired from one work by making the device formation region 2A as large as possible.

また、本実施形態の測定手段50によれば、例えばワークの上面が光を反射しにくく光学式の非接触式厚さ測定手段では厚さ測定が困難なワークであっても、砥石37の下面37aの高さ位置に基づいて厚さを測定するため、その種のワーク1の厚さを測定することができる。すなわち本実施形態によれば、ワークの種類によらずワークの厚さを確実に測定することができる。   Further, according to the measuring means 50 of the present embodiment, the lower surface of the grindstone 37, for example, even if the thickness of the workpiece is difficult to measure with the optical non-contact thickness measuring means, the upper surface of the workpiece is difficult to reflect light. Since the thickness is measured based on the height position of 37a, the thickness of the workpiece 1 of that kind can be measured. That is, according to this embodiment, the thickness of the workpiece can be reliably measured regardless of the type of workpiece.

1…ワーク、1a…ワークの表面、1b…ワークの裏面、2A…デバイス形成領域、4…リング補強部、10…加工装置、20…保持手段、30…研削手段、31…スピンドル、35…工具、37…砥石、37a…砥石の下面、50…測定手段。 DESCRIPTION OF SYMBOLS 1 ... Work, 1a ... Work surface, 1b ... Back surface of work, 2A ... Device formation area, 4 ... Ring reinforcement part, 10 ... Processing apparatus, 20 ... Holding means, 30 ... Grinding means, 31 ... Spindle, 35 ... Tool 37 ... Whetstone, 37a ... Lower surface of the grindstone, 50 ... Measuring means.

Claims (2)

ワークの表面側を保持する保持手段と、
該保持手段に保持されたワーク上面に砥石の下面を押し当てて研削加工する工具と、該工具を回転可能に支持するスピンドルとを有する研削手段と、
研削中にワークの厚さを測定する測定手段と、を有する加工装置であって、
前記測定手段は、
前記砥石の下面の高さ位置を検出し、該砥石の下面の高さ位置をワーク上面高さ位置としてワークの厚さを測定することを特徴とする加工装置。
Holding means for holding the surface side of the workpiece;
A grinding means having a tool for grinding by pressing the lower surface of the grindstone against the work upper surface held by the holding means, and a spindle for rotatably supporting the tool;
Measuring means for measuring the thickness of the workpiece during grinding,
The measuring means includes
A processing apparatus for detecting the height position of the lower surface of the grindstone and measuring the thickness of the workpiece with the height position of the lower surface of the grindstone as the workpiece upper surface height position.
ワークはデバイス形成領域に対応する裏面が研削され外周にリング補強部が形成されており、
ワーク上面は前記リング補強部の上面であり、
ワークの厚さは前記リング補強部の厚さであることを特徴とする請求項1に記載の加工装置。
The workpiece is ground on the back surface corresponding to the device formation area, and a ring reinforcement is formed on the outer periphery.
The upper surface of the workpiece is the upper surface of the ring reinforcing portion,
The processing apparatus according to claim 1, wherein a thickness of the workpiece is a thickness of the ring reinforcing portion.
JP2011005089A 2011-01-13 2011-01-13 Processing device Pending JP2012146868A (en)

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
JP2015036170A (en) * 2013-08-13 2015-02-23 株式会社ディスコ Grinding device
JP2020072172A (en) * 2018-10-31 2020-05-07 株式会社ディスコ Grinding machine

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Publication number Priority date Publication date Assignee Title
US6572444B1 (en) * 2000-08-31 2003-06-03 Micron Technology, Inc. Apparatus and methods of automated wafer-grinding using grinding surface position monitoring
JP2009158536A (en) * 2007-12-25 2009-07-16 Disco Abrasive Syst Ltd Method of processing wafer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6572444B1 (en) * 2000-08-31 2003-06-03 Micron Technology, Inc. Apparatus and methods of automated wafer-grinding using grinding surface position monitoring
JP2009158536A (en) * 2007-12-25 2009-07-16 Disco Abrasive Syst Ltd Method of processing wafer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015036170A (en) * 2013-08-13 2015-02-23 株式会社ディスコ Grinding device
JP2020072172A (en) * 2018-10-31 2020-05-07 株式会社ディスコ Grinding machine
JP7169164B2 (en) 2018-10-31 2022-11-10 株式会社ディスコ Grinding equipment

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