JP2012130687A - X線管用の陽極ターゲット、及びx線管を制御する方法 - Google Patents
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- H01J35/00—X-ray tubes
- H01J35/02—Details
- H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
- H01J35/08—Anodes; Anti cathodes
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Abstract
【解決手段】X線システム(10)は、場を発生する場発生器(14、16)と、ターゲットへ向けられる電子ビームを発生する電子ビーム発生器(60)と、第一のエネルギ・レベルの電子ビーム(18)及び第二のエネルギ・レベルの電子ビーム(20)を発生するために電子ビーム発生器を制御する電圧制御器(1228)とを含んでいる。X線システムはまた、電子ビームの少なくとも一つを偏向させるために場を制御する場発生器制御器を含み、電子ビーム(22)は、第一のエネルギ・レベル(18)では第一の接触位置(24)においてターゲット(28)に衝突し、第二のエネルギ・レベル(20)では第二の接触位置(26)においてターゲットに衝突する。ターゲットは、第一の接触位置(24)及び第二の接触位置(26)においてX線を濾波する。
【選択図】図1
Description
12:放出器
18、20:電子ビーム
22:軸
24、26:区域
28:陽極
36:コンピュータ
60:X線管
62、64:焦点スポット
66:電子ビーム
68:陰極
70:ターゲット
72:陽極
74:筐体
76:傾斜部分
78:ターゲット表面
80:旋回点
90、92:焦点スポット
902、904:電圧
906:持続時間
908、910:時刻
912:ビュー
914:持続時間
916、918:時刻
920:ビュー
922:持続時間
924、926:時刻
928:ビュー
930:移行
932:ビュー
934、936:時刻
938:点
940:ビュー
942:時刻
1002、1004、1102:曲線
1210:CTイメージング・システム
1212:ガントリ
1214:放射線源
1216:コーン・ビーム
1218:マルチ・スライス検出器アレイ
1220:素子
1222:患者
1224:回転中心
1226:制御機構
1228:放射線制御器
1230:ガントリ・モータ制御器
1232:DAS
1234:再構成器
1236:コンピュータ
1238:大容量記憶装置
1240:コンソール
1242:表示システム
1244:テーブル・モータ制御器
1246:電動テーブル
1248:ガントリ開口
1250:装置
1252:コンピュータ可読の媒体
1322:患者
1348:ガントリ開口
Claims (10)
- 場を発生するように構成されている場発生器(14、16)と、
ターゲットへ向けられる電子ビームを発生するように構成されている電子ビーム発生器(60)と、
第一のエネルギ・レベルの電子ビーム(18)及び第二のエネルギ・レベルの電子ビーム(20)を発生するために前記電子ビーム発生器を制御するように構成されている電圧制御器(1228)と、
前記電子ビームの少なくとも一つを偏向させるために場を制御するように構成されている場発生器制御器(14、16)と
を備えたX線システム(10)であって、前記電子ビーム(22)は、前記第一のエネルギ・レベル(18)では第一の接触位置(24)において前記ターゲット(28)に衝突し、前記第二のエネルギ・レベル(20)では第二の接触位置(26)において前記ターゲットに衝突し、前記ターゲットは、前記第一の接触位置(24)及び前記第二の接触位置(26)においてX線を濾波するように構成されている、X線システム(10)。 - 前記ターゲット(28)は、第一の低エネルギ・レベルのスペクトル(18)では低エネルギX線の第一の濾波を提供し、第二の高エネルギ・レベルのスペクトル(20)では低エネルギX線の第二の濾波を提供するように構成されており、前記第一の濾波は前記第二の濾波よりも少ない、請求項1に記載のX線システム(10)。
- 前記電子回路(1228)は、1秒間未満の時間内に前記第一の電圧から前記第二の電圧まで移行するように構成されている、請求項1に記載のX線システム(10)。
- 前記第一の接触位置(24)及び前記第二の接触位置(26)は異なるターゲット材料を含んでいる、請求項1に記載のX線システム(10)。
- 前記第一の接触位置(24)及び前記第二の接触位置(26)は異なるターゲット角度を含んでいる、請求項1に記載のX線システム(10)。
- 前記第一の接触位置(24)及び前記第二の接触位置(26)は異なる厚みのターゲット材料を含んでいる、請求項1に記載のX線システム(10)。
- 前記第一の接触位置(24)及び前記第二の接触位置(26)は異なるターゲット材料又は異なるターゲット角度又は異なる厚みの少なくとも一つを有する、請求項1に記載のX線システム(10)。
- 前記第一の電圧は約60kVpと約80kVpとの間にある、請求項1に記載のX線システム(10)。
- 前記第二の電圧は約110kVpと約160kVpとの間にある、請求項1に記載のX線システム(10)。
- 前記低エネルギ・データ及び前記高エネルギ・データは同時に取得される、請求項1に記載のX線システム(10)。
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US12/976,950 | 2010-12-22 | ||
US12/976,950 US8483361B2 (en) | 2010-12-22 | 2010-12-22 | Anode target for an x-ray tube and method for controlling the x-ray tube |
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JP2012130687A true JP2012130687A (ja) | 2012-07-12 |
JP2012130687A5 JP2012130687A5 (ja) | 2015-01-29 |
JP6014323B2 JP6014323B2 (ja) | 2016-10-25 |
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JP2008012206A (ja) * | 2006-07-10 | 2008-01-24 | Ge Medical Systems Global Technology Co Llc | X線断層撮影装置 |
JP2008154718A (ja) * | 2006-12-22 | 2008-07-10 | Ge Medical Systems Global Technology Co Llc | 放射線断層撮影装置 |
Cited By (2)
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WO2016190219A1 (ja) * | 2015-05-28 | 2016-12-01 | 株式会社日立製作所 | X線画像生成装置およびその制御方法 |
JPWO2016190219A1 (ja) * | 2015-05-28 | 2018-03-15 | 株式会社日立製作所 | X線画像生成装置およびその制御方法 |
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JP6014323B2 (ja) | 2016-10-25 |
US8483361B2 (en) | 2013-07-09 |
DE102011056641A1 (de) | 2012-06-28 |
US20120163530A1 (en) | 2012-06-28 |
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